JP4862936B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention belongs to the technical field of electro-optical devices such as liquid crystal devices and electronic equipment. The present invention also belongs to technical fields such as electrophoretic devices such as electronic paper, EL (electroluminescence) devices, and devices using electron-emitting devices (Field Emission Display and Surface-Conduction Electron-Emitter Display).

  Conventionally, an electro-optical device such as a liquid crystal device has been known in which an electro-optical material such as a liquid crystal is sandwiched between a pair of substrates and light is transmitted through the substrate so that an image can be displayed. Yes. Here, “image display” means, for example, that the light transmittance is changed by changing the state of the electro-optical material for each pixel so that light having different gradations can be visually recognized for each pixel. Realized.

  Such an electro-optical device includes pixel electrodes arranged in a matrix on one of the pair of substrates, scanning lines and data lines provided so as to sew the pixel electrodes, and pixel switching. By providing a TFT (Thin Film Transistor) or the like as an element for use, an element capable of active matrix driving is provided. In the electro-optical device capable of active matrix driving, the TFT is provided between the pixel electrode and the data line and controls conduction between them. The TFT is electrically connected to the scanning line and the data line. According to this, ON / OFF of the TFT is controlled through the scanning line, and when the TFT is ON, the image signal supplied through the data line is applied to the pixel electrode, that is, light is transmitted for each pixel. The rate can be changed.

  In the electro-optical device as described above, the above-described various configurations are formed on one substrate. However, when these are expanded in a plane, a large area is required, and the pixel aperture ratio, that is, There is a risk that the ratio of the area where light should be transmitted to the area of the entire surface of the substrate may be reduced. Therefore, conventionally, a technique of three-dimensionally configuring the above-described various elements, that is, a technique of stacking various components through an interlayer insulating film has been adopted. More specifically, a TFT and a scanning line having a function as a gate electrode film of the TFT are first formed on a substrate, a data line is formed thereon, and a pixel electrode is formed thereon. In this way, in addition to achieving miniaturization of the device, it is possible to improve the pixel aperture ratio by appropriately setting the arrangement of various elements. For example, see Patent Document 1.

JP 2002-156652 A

  By the way, in such an electro-optical device, there is a basic request to display a high-quality image. In order to achieve this, among other things, the electro-optical device has a high aperture ratio, a high image contrast, and the like. It has been demanded. Here, the “aperture ratio” can be expressed by the ratio of the area of the light transmission region to the total area of the substrate constituting the electro-optical device or the total area of the image display region on the substrate. The larger the is, the brighter the image. In order to achieve high contrast of an image, for example, a potential storage characteristic of the pixel electrode is enhanced by electrically connecting a storage capacitor to the TFT and the pixel electrode.

  On the other hand, electro-optical devices are required to be further reduced in size and definition and driven at high frequency. However, it is difficult to simultaneously achieve the above-described high aperture ratio and downsizing. This is because, if an image having a certain level of brightness or more is to be displayed, an aperture ratio of a certain level or more is required, so that the area of the light transmission region is contrary to the decrease in the substrate area due to downsizing. This is because it is necessary to keep almost constant. That is, in this case, an increase in the area of the light transmission region is substantially required.

  Further, in order to achieve a high aperture ratio, it is not necessary to simply broaden the area of the light transmission region. This is because the surrounding configuration is affected. For example, as described above, an electro-optical device may be provided with a storage capacitor in order to achieve a high contrast. In order to achieve a high aperture ratio on the premise of the existence of such a storage capacitor. In order to achieve this, it is necessary to reduce the storage capacity. However, if the storage capacitor is simply narrowed, the pair of electrodes constituting the storage capacitor will cause a corresponding increase in resistance, and as a result, crosstalk and burn-in will occur. This will cause a new problem. Conventionally, the pair of electrodes has been formed of polysilicon, WSi (tungsten silicide), or the like. However, since the resistance value of these materials is not low, the above-described case The problem was even more serious.

  Alternatively, in addition to the storage capacitor described above, a TFT as a pixel switching element is provided on the substrate. However, when realizing a high aperture ratio, no light is incident on the TFT or its semiconductor layer. It is necessary to do so. This is because such light incidence may cause a light leakage current in the semiconductor layer to cause flicker or the like on the image. And in realizing a high aperture ratio, it is generally considered that the area of the light-shielding region is relatively reduced compared to the area of the light-transmitting region. It will have a serious side. That is, the risk of light incidence on the semiconductor layer is greater.

  As described above, a measure such as simply increasing the area of the light transmission region cannot achieve a high aperture ratio, and comprehensive measures are taken from all aspects to achieve the object. There is a need.

  The present invention has been made in view of the above problems, and provides an electro-optical device capable of displaying an image with higher quality such as brighter by achieving high aperture ratio and high contrast. Is an issue. Another object of the present invention is to provide an electronic apparatus including such an electro-optical device.

In order to solve the above problems, an electro-optical device of the present invention has a data line on a substrate, a thin film transistor electrically connected to the data line, a pixel electrode provided corresponding to the thin film transistor, An electro-optical device including a storage capacitor electrically connected to the pixel electrode, the first light-shielding film provided between the substrate and the thin film transistor, and the thin film transistor and the pixel electrode and a second light-shielding layer which is disposed between, wherein the first light shielding film and the second light shielding film is formed with projecting portions cut away at one side of the corner portion of the pixel opening region, said storage capacitor Are formed between the first light-shielding film and the second light-shielding film, and the pair of electrodes intersects the first side along the one side and the data line. along the direction, the data line A second side which extends in the direction of the data line from the first side to fit Ri, and having a.

  According to the electro-optical device of the present invention, first, active matrix driving is possible by including scanning lines, data lines, pixel electrodes, and thin film transistors. In addition, in the electro-optical device, the various components described above form a part of the laminated structure, so that the overall size of the device can be reduced, and proper arrangement of the various components can be realized. As a result, the pixel aperture ratio can be improved.

  In the present invention, since the light shielding layer is provided between the data line and the pixel electrode, it is possible to prevent the occurrence of capacitive coupling between the two. That is, it is possible to reduce the possibility of potential fluctuations or the like in the pixel electrode due to the energization of the data line, and it is possible to display a higher quality image.

In the present invention, in particular, since the storage capacitor is provided, the potential holding characteristic of the pixel electrode can be improved. As a result, a high-contrast image can be displayed.
In the present invention, the dielectric film constituting the storage capacitor is preferably composed of a single layer or a plurality of layers including a film having a dielectric constant higher than that of the silicon oxide film.

  Therefore, in the storage capacitor according to the present invention, the charge storage characteristics are superior to those of the conventional one, which can further improve the potential holding characteristics in the pixel electrode, and display a higher quality image. Is possible. In addition, since the capacitance value of the storage capacitor can be increased in this way, the area of the pair of electrodes constituting the storage capacitor can be reduced as compared with the conventional case. Therefore, according to the present invention, a high aperture ratio can be achieved at the same time.

  In addition, in the present invention, the scanning line, the data line, the thin film transistor, and the storage capacitor are formed in a light shielding region. As a result, a configuration in which various elements in the laminated structure are not located in a region that substantially matches the light transmission region is realized, and the electro-optical device according to the present invention realizes and maintains a very high aperture ratio. Is possible. In such a configuration, even if the storage capacitor is formed in the light shielding region, no particular trouble occurs. That is, first, regarding the storage capacitor, even when the planar expansion of the pair of electrodes constituting the storage capacitor is somewhat suppressed in forming the storage capacitor so as to be confined in the light shielding region, the storage capacitor is As described above, if a dielectric film containing a high dielectric constant material is provided and has a high charge storage characteristic, almost desired performance can be exhibited. Secondly, as is apparent from the above-described effects, the light shielding layer can exhibit predetermined performance as long as it is formed so as to cover at least the data line. In short, according to the present invention, the performance required for various configurations in the laminated structure is fully exhibited (for example, high contrast of an image by installing a storage capacitor), and at the same time, these various configurations are By being installed in the light shielding region, it is possible to realize and maintain a very high aperture ratio. As described above, according to the electro-optical device of the present invention, it is possible to display an image with high quality such as brighter by achieving high aperture ratio and high contrast.

The “high dielectric constant material” referred to in the present invention includes TaOx (tantalum oxide), BST (barium strontium titanate), PZT (zirconate titanate), TiO ₂ (titanium oxide) as well as silicon nitride described later. ), ZiO ₂ (zirconium oxide), HfO ₂ (hafnium oxide), SiON (silicon oxynitride), and an insulating material containing at least one of SiN (silicon nitride). In particular, if a high dielectric constant material such as TaOx, BST, PZT, TiO ₂ , ZiO ₂ and HfO ₂ is used, the capacitance value can be increased in a limited region on the substrate. Alternatively, the use of a material containing silicon such as SiO ₂ (silicon oxide), SiON (silicon oxynitride), and SiN can reduce the occurrence of stress in the interlayer insulating film or the like.

In one aspect of the electro-optical device of the present invention, the electro-optical device includes a light-shielding relay layer that is formed of the same film as the second light-shielding film and electrically connects the thin film transistor and the pixel electrode . The pixel opening region may be defined by a light shielding film and the relay layer .

According to this aspect, it is possible to suitably define the opening region. In addition, since the light-shielding relay layer for electrically connecting the thin film transistor and the pixel electrode is formed in the same manner as the light-shielding film, the electrical connection between the two can be performed better. For example, it is conceivable that the relay layer and the light shielding film are made of a material having good compatibility with ITO or the like constituting the pixel electrode.
In an aspect of the electro-optical device according to the aspect of the invention, it is preferable that the second light shielding film is connected to one electrode forming the storage capacitor. According to this aspect, a more flexible laminated structure can be constructed. For example, when it is desired to set “one electrode of the storage capacitor” in this embodiment to a fixed potential, it is possible to maintain the electrode at a fixed potential by taking measures such as connecting the light shielding film to a power source having a fixed potential. It becomes possible.

  In the present invention, it is preferable that the pixel electrode is electrically connected to another layer in the stacked structure through titanium or a compound thereof.

  According to this configuration, the pixel electrode and other layers in the stacked structure connected to the pixel electrode (for example, at least one of a pair of electrodes configuring the storage capacitor, a relay layer described later, and the like can be assumed). The electrical connection to can be performed satisfactorily. This is because the pixel electrode is usually made of a transparent conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). As a result, disconnection of aluminum, insulation due to formation of alumina, and the like cannot be achieved. However, in this embodiment, since the pixel electrode is connected to the other layer via titanium or a compound thereof, the above-described problems do not occur.

In this aspect, an interlayer insulating film disposed as a base of the pixel electrode is provided, and a contact hole for electrical connection with the pixel electrode is formed in the interlayer insulating film. It is good to comprise so that the film | membrane containing the said titanium or its compound may be formed in the inner surface at least.

  According to such a configuration, first, it is possible to achieve electrical connection between the pixel electrode and other layers without concern about the above-described electrolytic corrosion. At the same time, in this configuration, the contact hole is interposed between the pixel electrode and other layers, so that it is possible to more appropriately arrange the two in the laminated structure or to improve the flexibility of layout. it can. At the same time, this improves the above-mentioned aim of appropriately arranging various configurations in the laminated structure, more specifically, arranging various configurations in a light shielding region to widen the light transmission region. Since it also means that it can be realized, it greatly contributes to the realization and maintenance of the high aperture ratio which is the object of the present invention.

  Furthermore, in this configuration, a film containing titanium or a compound thereof, that is, a film having a relatively excellent light shielding performance is formed on at least the inner surface of the contact hole. Light leakage or the like can be prevented in advance. That is, when the film absorbs light or the like, the progress of the light penetrating through the hollow portion of the contact hole can be blocked. Thereby, there is almost no possibility of causing light leakage or the like on the image. For the same reason, the light resistance of the thin film transistor or its semiconductor layer can be increased. As a result, it is possible to suppress the occurrence of light leakage current when light is incident on the semiconductor layer, and to prevent the occurrence of flicker and the like on the image due to this. As described above, according to this configuration, it is possible to display a higher quality image.

  In another aspect of the electro-optical device of the present invention, the data line is formed as the same film as one of a pair of electrodes constituting the storage capacitor.

  According to this aspect, the data line and one of the pair of electrodes constituting the storage capacitor are formed as the same film, in other words, in the same layer or simultaneously in the manufacturing process. Thereby, for example, it is not necessary to take the means of forming the two layers in separate layers and separating the two layers with an interlayer insulating film, and it is possible to prevent the layered structure from becoming higher. In this respect, the present invention is very advantageous in view of the fact that the above-described shield layer is formed between the data line and the pixel electrode in the laminated structure, and the corresponding higher layer is planned. This is because an excessively multi-layered structure impairs manufacturability and production yield rate. Even if one of the data line and the pair of electrodes is formed at the same time as in the present embodiment, if an appropriate patterning process is performed on the film, insulation between the two can be achieved. There is nothing special about this point.

  Note that, as is apparent from the description of this aspect, in the present invention, it is not always necessary to form the data line and at least one of the pair of electrodes constituting the storage capacitor as the same film. That is, both may be formed as separate layers.

  In another aspect of the electro-optical device of the present invention, a relay layer that electrically connects at least one of a pair of electrodes constituting the storage capacitor and the pixel electrode is further provided as a part of the stacked structure.

  According to this aspect, the pixel electrode and one of the pair of electrodes of the storage capacitor that respectively constitute a part of the multilayer structure are electrically connected by the relay layer that also constitutes a part of the multilayer structure. become. Specifically, contact holes may be formed. As a result, for example, the relay layer according to this embodiment has a two-layer structure, and the upper layer is made of a material compatible with ITO (Indium Tin Oxide) which is an example of a transparent conductive material usually used as a material for a pixel electrode. It is possible to adopt a flexible configuration such that the lower layer is made of a material compatible with one of the pair of electrodes constituting the storage capacitor, and the voltage applied to the pixel electrode or the potential of the pixel electrode The holding can be realized more suitably.

  Providing such a “relay layer” is preferable in order to optimize the arrangement of the pixel electrode and the storage capacitor. That is, according to this aspect, it is possible to devise the arrangement of the relay layer and the storage capacitor so as to expand the light transmission region as much as possible, so that a higher aperture ratio can be achieved.

  In another aspect of the electro-optical device of the present invention, the relay layer includes an aluminum film and a nitride film.

  According to this aspect, for example, in the case where the pixel electrode is made of ITO, if the electrode electrode and aluminum are brought into direct contact with each other, electric corrosion occurs between the two, resulting in disconnection of aluminum or insulation due to formation of alumina. In view of the unpreferable reason for this, in this embodiment, the pixel electrode and the relay layer are not brought into contact with ITO and a nitride film, for example, a titanium nitride film, instead of directly contacting ITO with aluminum. As a result, electrical connection with the storage capacitor can be realized. Thus, this configuration provides an example of the “compatible material” described above.

  In addition, since the silicon nitride film has an excellent effect of preventing moisture from entering or diffusing, it is possible to prevent moisture from entering the semiconductor layer of the thin film transistor. In this aspect, since the relay layer includes the nitride film, it is possible to obtain the above-described action, and thus it is possible to prevent the occurrence of a problem that the threshold voltage of the thin film transistor increases as much as possible.

  Thus, in the aspect provided with the relay layer, the light shielding layer may be configured to be formed as the same film as the relay layer.

  According to such a configuration, since the relay layer and the shield layer are formed as the same film, both configurations can be formed at the same time, which simplifies the manufacturing process or reduces the manufacturing cost. Cost reduction can be achieved.

  Moreover, in the aspect which combines the structure which concerns on this aspect, and the aspect which forms one side of a pair of electrode which comprises the data line and storage capacitance mentioned above as the same film, a data line, storage capacity, a relay layer, and a pixel electrode are combined. Arrangement modes, especially the stacking order, and the like are suitable, and the above-described effects can be enjoyed more effectively.

  More particularly, according to the configuration according to the present embodiment and the configuration in which the relay layer includes the nitride film, the light shielding layer also includes the nitride film. Therefore, it is possible to obtain the moisture intrusion action on the semiconductor layer of the thin film transistor as described above more widely on the surface of the substrate. Therefore, it is possible to enjoy the effect of long-term operation of the thin film transistor more effectively.

  Note that, as is apparent from the description of this embodiment, in the present invention, it is not always necessary to form the light shielding layer and the relay layer as the same film. That is, both may be formed as separate layers.

In another aspect of the electro-optical device of the present invention, at least one of the data line, the scanning line intersecting the data line, and the pair of electrodes constituting the storage capacitor is made of a light shielding material.

  According to this aspect, the various elements constituting the laminated structure on the substrate are made of the light shielding material, and the light shielding film that defines the light transmission region is formed. As a result, a so-called “built-in light shielding film” is provided on the substrate, and light leakage current is generated by light incidence on the semiconductor layer of the thin film transistor, thereby causing flicker or the like on the image. This can be avoided beforehand. That is, light resistance to the thin film transistor or its semiconductor layer can be improved. Incidentally, if the thin film transistor is formed in the lowermost layer on the substrate or a layer close thereto, the scanning line, the data line, and the storage capacitor are all formed on the upper side of the thin film transistor. This light shielding film can be referred to as an “upper light shielding film”.

  The “light-shielding material” referred to in this embodiment is at least one of high melting point metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). Including a single metal, an alloy, a metal silicide, a polysilicide, and a laminate of these. The “light-shielding material” may also include aluminum (Al).

  In addition, in the present embodiment, in particular, all of the various elements described above may constitute the “built-in light shielding film”, but preferably, at least one of the two elements extending in the direction intersecting each other is preferable. A set may constitute the “built-in light shielding film”. For example, in a case where a capacitor line is formed along the second direction in which the scanning line extends, and a part of the capacitor line is one of a pair of electrodes constituting the storage capacitor. The capacitor line and the data line are preferably made of a light-shielding material, and these constitute a “built-in light-shielding film”. According to such a configuration, the shape of the “built-in light-shielding film” is a lattice shape, and it is possible to suitably correspond to the matrix-like arrangement that is normally adopted as the arrangement form of the pixel electrodes.

  In another aspect of the electro-optical device of the present invention, one of the pair of electrodes constituting the storage capacitor constitutes a part of a capacitor line formed along the second direction, and the capacitor line is And a multilayer film including a low resistance film.

  According to this aspect, first, one of the pair of electrodes constituting the storage capacitor (hereinafter sometimes referred to as “one electrode” for simplicity) is along the second direction, that is, the scanning line forming direction. A part of the formed capacitance line is formed. Thus, for example, in order to set the one electrode to a fixed potential, it is necessary to individually provide a conductive material or the like for setting one electrode of the storage capacitor that can be provided for each pixel. There is no need to adopt a mode in which each capacitor line is connected to a fixed potential source. Therefore, according to this aspect, the manufacturing process can be simplified or the manufacturing cost can be reduced.

  In this embodiment, in particular, the capacitor line is formed of a multilayer film including a low resistance film. According to such a configuration, it is possible to realize a higher function of the capacitor line (for example, to have other functions in addition to the function as the fixed potential side capacitor electrode of the capacitor line). . In particular, the multilayer film according to the present invention includes a low-resistance film, that is, a material having a lower electrical resistance than conventional polysilicon or WSi, such as a single metal such as aluminum, copper, or chromium, or a material containing these. Therefore, high electrical conductivity can be achieved. And by achieving this high electrical conductivity, in this aspect, the capacity line can be narrowed, that is, the storage capacity can be narrowed without any special restriction. Therefore, this aspect greatly contributes to improving the aperture ratio. In other words, it is possible to prevent the occurrence of crosstalk, burn-in, and the like due to the increase in resistance that has conventionally occurred when the capacitance line is narrowed.

  In addition, since the capacitor line in this embodiment is formed of a multilayer film including the above-described low resistance film, in addition to the low resistance film, a film made of another material for realizing a light shielding function capable of preventing light incidence on the thin film transistor. As a constituent element of the capacitor line.

  Further, when the capacitor line is formed of a multilayer film as in the present invention, the function as the storage capacitor can be stabilized. That is, for example, if only the purpose of lowering the resistance exemplified above is achieved, it is sufficient to form a capacitor line with only one layer of such material. It may not be possible to fulfill this sufficiently. However, in the present invention, as described above, even if a material having some special function is used in one layer by forming a capacitor line from two or more layers, accumulation is performed in another layer. Since the material that should function as a capacitor can be used in a compensatory manner, the above-described problem does not occur.

  In the present invention, the above-described multi-function can be achieved in the capacitor line, so that the degree of freedom in designing the electro-optical device is also improved.

  In another aspect of the electro-optical device according to the aspect of the invention, the capacitor line includes the low-resistance film in an upper layer and a film made of a light-absorbing material in the lower layer.

  According to this aspect, the multi-functionalization as described below is achieved in the capacitor line. First, since the upper layer of the capacitance line has the low resistance film, for example, assuming that light is incident from the upper layer side, the light is reflected by the surface of the low resistance film. Thus, it is possible to prevent this from reaching the thin film transistor directly. This is based on the fact that the material generally has a high light reflectivity.

  On the other hand, since the lower layer of the capacitor line is made of a light-absorbing material such as polysilicon, for example, after entering the electro-optical device, it is reflected by the surface of the low resistance film or the lower surface of the data line. It is possible to prevent so-called stray light, which is generated as a result of the above, from reaching the thin film transistor. In other words, all or part of such stray light is absorbed in the lower layer of the capacitor line, so that the possibility that the stray light reaches the thin film transistor can be reduced.

  In the present invention, since the capacitor line is assumed to be “consisting of a multilayer film”, for example, in this embodiment, even if aluminum exists in the upper layer of the capacitor line and polysilicon exists in the lower layer, the aluminum Furthermore, a film made of another material exists in the upper layer, or a film made of another material exists in the lower layer of the polysilicon, or a film made of another material exists between the aluminum and the polysilicon. Needless to say, it may be in a form that exists. In some cases, the structure may be aluminum, polysilicon, aluminum, or the like in order from the top.

  In another aspect of the electro-optical device of the present invention, the low-resistance film is made of aluminum or an aluminum alloy.

  According to this aspect, since aluminum is a very low-resistance material, the above-described operational effects can be more reliably achieved. Incidentally, the resistance value of aluminum is approximately 1/100 compared to the above-described polysilicon and WSi.

  In addition, according to the present configuration in which the capacitance line includes aluminum or an aluminum alloy, the following operational effects can be obtained. Conventionally, as already described, the capacitor line is composed of polysilicon alone, WSi, or the like. Therefore, the interlayer insulating film or the like formed on the capacitor line is formed by the shrinkage force or compressive force caused by these materials. Although a large stress was generated, such a problem does not occur in this embodiment. That is, in the prior art, due to the presence of the stress, the thickness of the interlayer insulating film has a certain restriction, and if it is made too thin, the stress may be damaged by the stress. In this aspect, as a result of not having to consider the existence of such stress, the thickness of the interlayer insulating film can be reduced as compared with the conventional one, and therefore the entire electro-optical device can be reduced in size. .

  In another aspect of the electro-optical device according to the aspect of the invention, the storage capacitor includes the dielectric film and an upper electrode and a lower electrode that sandwich the dielectric film, and extends along a plane parallel to the surface of the substrate. By including the laminated first portion and the second portion laminated along a plane rising with respect to the surface of the substrate, the cross-sectional shape includes a convex shape.

  According to this aspect, for example, is the lower electrode itself formed so as to include a convex portion with respect to the substrate, or is a convex member formed at a predetermined position under the lower electrode, etc. Accordingly, the dielectric film and the upper electrode located in the upper layer have a bent shape in a cross-sectional view. In this case, as compared with the conventional planar storage capacitor, only the area portion in the second portion in which the upper electrode, the dielectric film, and the lower electrode are laminated along the plane rising along the surface of the substrate. In other words, the effect of increasing the capacity can be expected only in the area of the convex side wall.

  Therefore, in the present invention, it is possible to increase the capacitance without planarly increasing the area of the upper electrode and the lower electrode constituting the storage capacitor, so that the storage capacitor is maintained while maintaining a high aperture ratio. Can be realized, and with this, it is possible to display a high-quality image without display unevenness and flickering.

In the invention, it is preferable that the convex shape is a tapered shape.
According to this aspect, it is possible to suitably form the dielectric film and the upper electrode formed on the lower electrode. That is, according to the fact that the convex shape includes a tapered shape, the corners of the convex shape become smooth, as is clear from the contrast with the convex shape including a vertical side wall portion, for example. When the dielectric film and the upper electrode are formed on the convex shape including the convex shape, there is almost no need to worry about deterioration of the coverage. Therefore, according to this aspect, it is possible to preferably form the dielectric film and the upper electrode.

  Moreover, when comparing the convex shape including the vertical side wall portion with the convex shape including the tapered shape according to this aspect, the height of both is the same, and the area of the upper surface of the convex shape is the same between the two In general, it can be said that the latter is preferable from the viewpoint of an increase in the storage capacity because the area of the side wall can be larger than the former.

  In another aspect of the electro-optical device of the invention, the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line.

  According to this aspect, when an interlayer insulating film or the like is stacked on the convex shape, a convex portion is formed on the convex shape, and therefore, along at least one of the scanning line and the data line. A form in which the convex portion extends will appear. Therefore, in this case, a form in which the convex portion exists between adjacent pixel electrodes appears. As a result, when the electro-optical device according to this aspect is driven by the 1H inversion driving method, the 1S inversion driving method, or the dot inversion driving method, there is an adverse effect on the image due to the lateral electric field generated between the adjacent pixel electrodes. Therefore, it is possible to display a higher quality image. The circumstances will be described in detail below.

  First, in the 1H inversion driving method, for example, assuming pixel electrodes arranged in a square shape, in a certain frame or field, the pixel electrodes arranged in the odd-numbered rows are used with reference to the potential of the common electrode. In addition to driving with a positive potential, the pixel electrodes arranged in even rows are driven with a negative potential, and in the next frame or field following this, the odd rows are negative with respect to the previous, This is a driving method in which even-numbered rows are driven in a positive state continuously. On the other hand, the 1S inversion driving method is a driving method that can be grasped by replacing the odd-numbered rows with the “odd-numbered columns” and the even-numbered rows with the “even-numbered columns” in the description of the 1H inversion driving method. Further, the dot inversion driving method is a driving method in which the voltage polarity applied to each pixel electrode is inverted between pixel electrodes adjacent to each other in both the column direction and the row direction. By adopting these driving methods, it is possible to suppress the deterioration of electro-optical materials such as liquid crystal due to the application of a DC voltage component, or the occurrence of crosstalk and flicker on an image.

  However, in such an inversion driving method, pixel electrodes to which voltages of different polarities are applied are adjacent to each other, so that a so-called “lateral electric field” is generated. For example, in the 1H inversion driving method, a horizontal electric field is generated between a pixel electrode located in a certain row and a pixel electrode located in a row adjacent thereto. When such a horizontal electric field is generated, a potential difference between the pixel electrode on the substrate and the common electrode on the counter substrate (hereinafter referred to as “vertical electric field”) is disturbed to cause alignment failure of the liquid crystal. Light leakage or the like occurs, resulting in image quality deterioration such as a reduction in contrast ratio.

  However, in this aspect, as described above, since the convex shape of the storage capacitor is formed along at least one of the scanning line and the data line, generation of the lateral electric field can be suppressed. It is.

  First, if the edge of the pixel electrode is placed on the edge of the convex portion, the distance between the pixel electrode and the common electrode can be reduced. By being possible. Second, regardless of whether or not the edge of the pixel electrode exists on the convex portion, the lateral electric field itself can be weakened depending on the dielectric constant of the convex portion. Thirdly, since the volume of the gap between the convex portion and the common electrode, that is, the volume of the liquid crystal located in the gap can be reduced, the influence of the lateral electric field on the liquid crystal is relatively reduced. By being possible.

  Incidentally, in the case of the 1H inversion driving method, it is preferable to form the convex shape or the convex portion along the scanning line, and in the case of the 1S inversion driving method, it is preferable to form it along the data line. Needless to say. In the dot inversion driving method, it is preferable that the convex shape or the convex portion is formed along both the scanning line and the data line.

  As described above, according to this aspect, it is possible to suitably realize the application of the vertical electric field to the liquid crystal, and thus it is possible to display an image as expected.

  In another aspect of the electro-optical device according to the aspect of the invention, the storage capacitor includes the dielectric film and an upper electrode and a lower electrode that sandwich the dielectric film, and the dielectric film includes a silicon nitride film and an oxide film. It consists of a silicon film.

According to this aspect, the dielectric film includes the silicon nitride film having a relatively high dielectric constant, and the storage capacitor area, that is, the area of the pair of electrodes constituting the storage capacitor is somewhat sacrificed. However, it is possible to enjoy high charge storage characteristics.
Thereby, the potential holding characteristic in the pixel electrode is remarkably improved, and a higher quality image can be displayed. In addition, since the storage capacitor can be reduced in area, the pixel aperture ratio can be further improved.

  In addition, since the silicon nitride film has an excellent action of preventing moisture from entering or diffusing, it is possible to prevent moisture from entering the semiconductor layer included in the thin film transistor. In this respect, if moisture enters the semiconductor layer, the gate insulating film, or the like, positive charges are generated at the interface between the semiconductor layer and the gate insulating film, which adversely affects the threshold voltage. In this aspect, as described above, moisture intrusion into the semiconductor layer can be effectively prevented, so that it is possible to prevent the occurrence of a problem that the threshold voltage of the thin film transistor increases as much as possible.

  Further, since the dielectric film includes a silicon oxide film in addition to the silicon nitride film, the withstand voltage of the storage capacitor is not lowered.

  As described above, according to the dielectric film according to this aspect, it is possible to simultaneously enjoy the composite action effect.

  In addition, in a mode in which the configuration of the dielectric film according to this mode is added to the storage capacitor including the convex shape described above, a significant capacity increase effect can be expected. Therefore, it can be said that such a configuration is one of the most suitable modes for the purpose of the present invention to realize and maintain a high aperture ratio.

  In addition, this embodiment includes a case where the dielectric film has a two-layer structure of a silicon oxide film and a silicon nitride film. In some cases, for example, a silicon oxide film, a silicon nitride film, and a silicon oxide film are used. This includes a case where a three-layer structure is formed, or a case where a layered structure of more than that is taken.

  In another aspect of the electro-optical device according to the aspect of the invention, an interlayer insulating film disposed as a base of the pixel electrode further forms a part of the stacked structure, and the surface of the interlayer insulating film is subjected to a planarization process. Has been.

  According to this aspect, since the surface of the interlayer insulating film disposed as the base of the pixel electrode is flattened, the alignment film that is normally formed on the interlayer insulating film is also flat. It is possible to form it as having a smooth surface. That is, the uneven shape on the surface of the interlayer insulating film is not transferred to the surface of the alignment film. Therefore, it is possible to reduce the possibility of causing light leakage or the like due to unnecessary disturbance in the alignment state of the liquid crystal as an example of the electro-optical material that comes into contact with the alignment film. Therefore, a higher quality image can be displayed.

  The “planarization process” in the present embodiment specifically includes, for example, a CMP (Chemical Mechanical Polishing) process or an etchback process, but various other planarization techniques may be used. Of course.

  Here, the CMP treatment is generally a polishing liquid containing silica particles or the like at the corresponding contact portion while bringing both surfaces into contact with each other while rotating both the substrate to be processed and the polishing cloth (pad). In this technique, the surface of the substrate to be processed is polished by supplying a slurry to balance the mechanical action and the chemical action.

  In addition, the etch-back process is generally performed by forming a flat film such as a photoresist or SOG (Spin On Glass) film as a sacrificial film on an uneven surface, and then performing the etching process on the sacrificial film. This is a technique for flattening the surface by performing the process up to the surface where the unevenness exists (thus, the unevenness is “smoothed”). However, in the present invention, the above-described sacrificial film is not necessarily required. For example, after filling the space inside the contact hole (that is, so as to overflow from the contact hole) to the surface of the interlayer insulating film, an excessive film made of a filler is formed, and then in the region excluding the contact hole Further, by completely etching the excess portion, a form in which the filler remains only inside the contact hole and a flat surface appears may be performed.

  As described above, the surface of the interlayer insulating film is flattened as in the present invention, and driving with a different polarity for each row of the scanning line or the pixel electrode connected to the scanning line (that is, “1H inversion driving”). In the case of carrying out (see below), there is a possibility that a horizontal electric field is generated between adjacent pixel electrodes, and there is a risk of disturbing the alignment state of the liquid crystal. Regarding this point, as will be described later, a means of suppressing the generation of a lateral electric field by providing a protrusion on the surface of the interlayer insulating film is preferably employed, but other means such as the following are also employed. Preferably it can be adopted.

  That is, polarity inversion is not performed for each scanning line but for each field period (one vertical scanning period), that is, “1 V inversion driving” is performed. According to this, in a certain field period, adjacent pixel electrodes are not driven with different polarities, so that in principle, a lateral electric field cannot be generated.

  However, when this 1V inversion driving is employed, the following problems occur. That is, every time the polarity is reversed, that is, every vertical scanning period, there is a problem that flicker is generated on the image.

  Therefore, in such a case, it is preferable to perform double speed field inversion driving as described in detail in a later embodiment. Here, the double-speed field inversion driving means that one field period is half of that in the past (for example, if the former is driven at 120 [Hz], “half” is preferably 1/60 [ s] or less.). Therefore, assuming 1V inversion driving, the polarity inversion period is halved compared to the prior art. In this way, one vertical scanning period is shortened, that is, a screen with a positive polarity and a screen with a negative polarity are switched more quickly, and the aforementioned flicker becomes inconspicuous.

  As described above, according to the double speed field inversion driving method, it is possible to display a higher quality image without flicker.

  In another aspect of the electro-optical device according to the aspect of the invention, a plurality of the pixel electrodes are arranged in a plane, and the first pixel electrode group and the first cycle are driven in an inverted manner at the first cycle. And a second pixel electrode group that is inverted and driven in a second cycle, and at least one of the data line and the shield layer is a main line that extends above the scanning line and intersects the scanning line A pixel electrode on the substrate, wherein the pixel electrode on the substrate is provided with a counter electrode facing the plurality of pixel electrodes on a counter substrate disposed opposite to the substrate. A convex portion is formed on the base surface of the substrate in a region that becomes a gap between adjacent pixel electrodes across the scanning line as viewed in plan according to the presence of the overhanging portion.

  According to this aspect, the first pixel electrode group for inversion driving with the first period, and the second pixel electrode group for inversion driving with the second period complementary to the first period, Are arranged in a plane on the first substrate, and (i) adjacent pixel electrodes that are driven with mutually opposite polarity driving voltages at the time of inversion driving, and (ii) at the time of inversion driving. There are both pixel electrodes that are adjacent to each other and driven by the same polarity drive voltage at each time. Both of them exist as long as they are electro-optical devices such as a matrix drive type liquid crystal device adopting an inversion driving method such as the above-described 1H inversion driving method. Accordingly, a lateral electric field is generated between adjacent pixel electrodes belonging to different pixel electrode groups (that is, adjacent pixel electrodes to which a reverse polarity potential is applied).

  Here, in the present invention, in particular, at least one of the data line and the shield layer includes an overhang portion that protrudes along the scan line from the main line portion that extends above the scan line so as to intersect the scan line. Then, on the underlying surface of the pixel electrode, a convex portion is formed in a region that becomes a gap between adjacent pixel electrodes across the scanning line in plan view according to the presence of the protruding portion. That is, the base surface of the pixel electrode is a surface in which convex portions having a predetermined height and a predetermined shape are positively formed.

  As a result, firstly, if the edge of each pixel electrode is formed so as to be located on this convex portion, the vertical electric field generated between each pixel electrode and the counter electrode is caused to be adjacent to the adjacent pixel electrodes (particularly, Compared with a lateral electric field generated between pixel electrodes belonging to different pixel electrode groups), it is relatively strengthened. That is, the electric field generally increases as the distance between the electrodes becomes shorter, so that the edge of the pixel electrode approaches the counter electrode by the height of the convex portion, and the vertical electric field generated between the two is strengthened. Second, the lateral electric field generated between adjacent pixel electrodes (particularly, pixel electrodes belonging to different pixel electrode groups) is convex regardless of whether or not the edge of each pixel electrode is positioned on this convex portion. By reducing the volume of the electro-optical material through which the transverse electric field passes through and being weakened according to the dielectric constant of the convex portion due to the presence of the convex portion (by partially replacing the convex portion), the lateral electric field with respect to the electro-optical material is also reduced. The effect can be reduced. Accordingly, it is possible to reduce malfunctions of the electro-optical material such as liquid crystal alignment defects due to the transverse electric field associated with the inversion driving method. At this time, as described above, the edge portion of the pixel electrode may or may not be located on the convex portion, and is further located in the middle of the inclined or substantially vertical side surface of the convex portion. Also good.

  In addition, the height and shape of the protrusions can be controlled much more accurately than the technology that adjusts the height of the edge of the pixel electrode by utilizing the presence of other wiring and elements located below the data lines. is there. In the prior art, since slight pattern shifts in each of the existing films are combined, it is basically difficult to make the height and shape of the unevenness in the uppermost layer finally formed as designed. For this reason, it is possible to reliably reduce malfunctions of the electro-optical material such as liquid crystal alignment defects due to a lateral electric field, and to improve device reliability.

  In addition, since the light shielding film for concealing the malfunctioning portion of the electro-optic material can be reduced, the aperture ratio of each pixel can be increased without causing image defects such as light leakage.

  As a result, it is possible to reliably reduce malfunctions caused by lateral electric fields in electro-optic materials such as liquid crystals by forming convex portions corresponding to the protruding portions of the data lines, and to display high-contrast and bright high-quality image displays. An electro-optical device such as a device can be manufactured relatively easily.

  The present invention can be applied to various types of electro-optical devices in addition to a transmission type and a reflection type.

  In another aspect of the electro-optical device according to the aspect of the invention, a plurality of the pixel electrodes are arranged in a plane, and the first pixel electrode group and the first cycle are driven in an inverted manner at the first cycle. And a counter electrode opposed to the plurality of pixel electrodes on a counter substrate disposed opposite to the substrate, and viewed in a plan view. And a convex portion formed in a region serving as a gap between adjacent pixel electrodes. The convex portion removes the planarizing film once formed on the convex portion by etching and after the removal. The exposed surface of the convex portion is made to recede, and the surface step is a gentle convex portion.

  According to this aspect, although a horizontal electric field is generated between adjacent pixel electrodes belonging to different pixel electrode groups, that is, adjacent pixel electrodes to which a reverse polarity potential is applied, a non-opening region of each pixel Since the convex portion is positively formed by etching on the edge of the pixel electrode located adjacent to or adjacent to the pixel electrode, first, the edge of each pixel electrode is formed on the convex portion. For example, the vertical electric field generated between each pixel electrode and the counter electrode can be relatively strengthened compared to the horizontal electric field generated between adjacent pixel electrodes. Second, regardless of whether or not the edge of each pixel electrode is located on this convex portion, the lateral electric field generated between adjacent pixel electrodes depends on the dielectric constant of the convex portion due to the presence of the convex portion. By reducing the volume of the electro-optic material through which the transverse electric field passes while being weakened, the effect of the transverse electric field on the electro-optic material can be reduced. Accordingly, it is possible to reduce malfunctions of the electro-optical material such as liquid crystal alignment defects due to the transverse electric field associated with the inversion driving method. At this time, as described above, the edge portion of the pixel electrode may or may not be located on the convex portion, and is further located in the middle of the inclined or substantially vertical side surface of the convex portion. Also good.

  In addition, since the light shielding film for concealing the malfunctioning portion of the electro-optic material can be reduced, the aperture ratio of each pixel can be increased without causing image defects such as light leakage.

  In the present invention, in particular, since the convex portion having a gentle step is formed, it is effective to cause a malfunction of the electro-optical device such as a liquid crystal alignment defect due to the step in the vicinity of the convex portion. It can be prevented. Especially when the alignment film formed on the pixel electrode is subjected to a rubbing treatment, if the step of the convex portion is gentle, the rubbing can be performed relatively easily and uniformly without unevenness, resulting in poor alignment of the liquid crystal. It is possible to prevent the malfunction of the electro-optical material such as the above effectively.

  As a result, the malfunction due to the transverse electric field in the electro-optic material such as liquid crystal can be reliably reduced by forming the convex portion, and the malfunction due to the step occurs in the electro-optic material such as liquid crystal due to the formation of the convex portion. Therefore, an electro-optical device such as a liquid crystal device that displays a high-contrast and bright high-quality image can be realized.

  In another aspect of the electro-optical device according to the aspect of the invention, a plurality of the pixel electrodes are arranged in a plane, and the first pixel electrode group and the first cycle are driven in an inverted manner at the first cycle. And a counter electrode opposed to the plurality of pixel electrodes on a counter substrate disposed opposite to the substrate, and viewed in a plan view. In order to form a convex portion in a region that becomes a gap between adjacent pixel electrodes, a convex pattern is formed below the pixel electrode and as the same layer as at least one of the data line and the shield layer.

  According to this aspect, the convex portion as described above is formed by forming the convex pattern formed under the pixel electrode and as the same layer as at least one of the data line and the shield layer. Here, the “convex pattern” can be formed so as to have a shape that is not continuous in plan with at least one of the data line and the shield layer, and in that case, in comparison with the “projection portion”. It can be said that there is a feature in this point. And, in this form, particularly when the convex pattern is not formed as the same layer as the data line, the convex pattern is not electrically connected to the data line, and the potential of both is In general, since this is different, the parasitic capacitance between the convex pattern and the scanning line can be reduced.

  Particularly in the aspect of forming the convex portion, in the region that becomes the gap between the pixel electrodes adjacent to each other when seen in a plan view, it is caused by the height of at least one of the data line, the shield layer, the protruding portion, and the convex pattern. And a light-shielding film having a width wider than the at least one line width along the first direction or the second direction.

  According to such a configuration, since the light shielding film having a width wider than at least one line width of the data line, the shield layer, the protruding portion, and the convex pattern is provided, it is attributed to the at least one. In the unlikely event that light leakage or the like occurs due to an alignment defect caused by the convex portions formed in this way, the progress is blocked by the light shielding film, and the possibility of adverse effects on the image can be reduced. .

In the present invention, various aspects can be adopted as described above. However, in the various aspects of the present invention described above, regardless of the citation form of each claim described in the claims, It is basically possible to freely combine one embodiment with another embodiment. However, due to the nature of the matter, it may not be compatible. For example, in contrast to an aspect in which a film made of titanium or the like is formed on the inner surface of a contact hole for electrical connection with a pixel electrode, the surface of the interlayer insulating film in which the contact hole is formed For example, the above-described planarization process may be combined. Of course, it is also possible to configure an electro-optical device having three or more modes.
The electro-optical device of the present invention includes a data line extending in the first direction on the substrate, a scanning line extending in the second direction intersecting the data line, and the data line and the scanning line. An electro-optical device comprising a pixel electrode and a thin film transistor arranged so as to correspond to an intersecting region as a part of a stacked structure, wherein the electro-optical device is further above the semiconductor layer of the thin film transistor and on the substrate. A storage capacitor formed below the pixel electrode and electrically connected to the pixel potential, a shield layer disposed between the data line and the pixel electrode, and a lower side formed below the semiconductor layer of the thin film transistor A light-shielding film is provided as part of the stacked structure, and the lower light-shielding film defines at least a corner of a pixel opening region, and the scanning line, the data line, and the storage The amount and the shield layer may be formed in the light shielding region.

  Moreover, as an aspect of the present invention, the shield layer may have a light shielding property.

  In order to solve the above-described problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention. However, the various aspects are included.

  According to the electronic apparatus of the present invention, since the electro-optical device of the present invention described above is provided, it is possible to display a higher quality image by achieving high aperture ratio and high contrast. In addition, various electronic devices such as a projection display device, a liquid crystal television, a mobile phone, an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a video phone, a POS terminal, and a touch panel can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

FIG. 3 is a circuit diagram illustrating an equivalent circuit of various elements, wirings, and the like provided in a plurality of matrix pixels that form an image display region in the electro-optical device according to the first embodiment of the present invention. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed in the electro-optical device according to the first embodiment of the invention. FIG. It is the top view which extracted only the principal part from FIG. It is AA 'sectional drawing of FIG. 6 is a plan view of a plurality of adjacent pixel groups on a TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed in an electro-optical device according to a second embodiment of the present invention. FIG. It is AA 'sectional drawing of FIG. It is a top view which shows the formation aspect (on a data line and outside an image display area) of a nitride film. It is BB 'sectional drawing of FIG. It is a perspective view which shows the three-dimensional structure of the storage capacity corresponding to one pixel. FIG. 10 is a perspective view illustrating a configuration of a storage capacitor as a comparative example with respect to FIG. 9. It is explanatory drawing for demonstrating the generation | occurrence | production mechanism of a horizontal electric field. It is a figure of the same meaning as FIG. 4, Comprising: It is a figure which shows what becomes the form provided with the convex part for a horizontal electric field generation | occurrence | production prevention. FIG. 3 is a cross-sectional view taken along the line GG ′ of FIG. 2, illustrating a configuration in which a convex portion for preventing generation of a lateral electric field is provided. FIG. 14 is a perspective view illustrating a specific mode (a mode using a data line, a relay layer for a shield layer, and a second relay layer) for forming the convex portion illustrated in FIGS. 12 and 13 regarding a modification of the second embodiment. is there. It is a perspective view shown about the specific aspect (mode using a shield layer and a 3rd relay layer) for forming the convex part shown in FIG.12 and FIG.13 regarding the modification of 2nd Embodiment. It is a timing chart which shows the voltage application method with respect to the conventional pixel electrode. 10 is a timing chart illustrating a method for applying a voltage to a pixel electrode according to a fifth embodiment of the present invention. FIG. 14 is a diagram having the same concept as in FIG. 4 according to the sixth embodiment of the present invention, and shows a state in which a Ti film is formed on the inner surface of a contact hole for electrical connection with a pixel electrode. FIG. FIG. 5 is a plan view of the TFT array substrate in the electro-optical device according to the embodiment of the present invention, as viewed from the side of the counter substrate together with each component formed thereon. It is HH 'sectional drawing of FIG. 1 is a schematic cross-sectional view showing a color liquid crystal projector as an example of a projection type color display device which is an embodiment of an electronic apparatus of the present invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the electro-optical device of the invention is applied to a liquid crystal device.

(First embodiment)
First, the configuration of the pixel unit of the electro-optical device according to the first embodiment of the invention will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that constitutes an image display region of the electro-optical device. FIG. 2 is a plan view of a plurality of adjacent pixel groups on the TFT array substrate on which data lines, scanning lines, pixel electrodes and the like are formed. Note that FIG. 3 is a plan view mainly extracted from FIG. 2 to show the main part, specifically, the arrangement relationship among the data lines, shield layers, and pixel electrodes. 4 is a cross-sectional view taken along the line AA ′ of FIG. In FIG. 4, in order to make each layer and each member recognizable on the drawing, the scale is different for each layer and each member.

  In FIG. 1, a pixel electrode 9 a and a TFT 30 for switching control of the pixel electrode 9 a are formed in a plurality of pixels formed in a matrix that forms the image display region of the electro-optical device according to the present embodiment. The data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the switch of the TFT 30 as a switching element for a certain period. Write at a predetermined timing.

  Image signals S 1, S 2,..., Sn written in a liquid crystal as an example of an electro-optical material via the pixel electrode 9 a are held for a certain period with the counter electrode formed on the counter substrate. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The storage capacitor 70 is provided side by side along the scanning line 3a, and includes a capacitor electrode 300 including a fixed potential side capacitor electrode and fixed at a constant potential.

  Hereinafter, an actual configuration of the electro-optical device that realizes the above-described circuit operation using the data line 6a, the scanning line 3a, the TFT 30, and the like will be described with reference to FIGS.

  First, in FIG. 2, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10 (the outline is indicated by a dotted line portion 9a ′), and the pixel electrodes 9a are respectively along the vertical and horizontal boundaries of the pixel electrode 9a. A data line 6a and a scanning line 3a are provided. As will be described later, the data line 6a has a laminated structure including an aluminum film, and the scanning line 3a is made of, for example, a conductive polysilicon film. Further, the scanning line 3a is disposed so as to face the channel region 1a 'indicated by the hatched region rising to the right in the drawing in the semiconductor layer 1a, and the scanning line 3a functions as a gate electrode. That is, each of the intersections between the scanning lines 3a and the data lines 6a is provided with a pixel switching TFT 30 in which the main line portion of the scanning line 3a is disposed opposite to the channel region 1a ′ as a gate electrode.

  Next, as shown in FIG. 4, which is a cross-sectional view taken along the line AA ′ of FIG. 2, the electro-optical device is disposed opposite to the TFT array substrate 10 made of, for example, a quartz substrate, a glass substrate, or a silicon substrate. For example, a counter substrate 20 made of a glass substrate or a quartz substrate.

  As shown in FIG. 4, the pixel electrode 9a is provided on the TFT array substrate 10 side, and an alignment film 16 subjected to a predetermined alignment process such as a rubbing process is provided on the upper side thereof. ing. The pixel electrode 9a is made of a transparent conductive film such as an ITO film. On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided below the counter electrode 21. . The counter electrode 21 is made of a transparent conductive film such as an ITO film, for example, and the alignment films 16 and 22 are made of a transparent organic film such as a polyimide film, for example. Between the TFT array substrate 10 and the counter substrate 20 arranged so as to face each other, an electro-optical material such as liquid crystal is sealed in a space surrounded by a sealing material (see FIGS. 19 and 20), which will be described later. Is formed. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 22 in a state where an electric field from the pixel electrode 9a is not applied. The liquid crystal layer 50 is made of, for example, an electro-optical material in which one kind or several kinds of nematic liquid crystals are mixed. The sealing material is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the TFT substrate 10 and the counter substrate 20 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

  On the other hand, on the TFT array substrate 10, in addition to the pixel electrode 9a and the alignment film 16, various configurations including these are provided in a laminated structure. As shown in FIG. 4, the stacked structure includes, in order from the TFT array substrate 10, a first layer including the lower light-shielding film 11a, a second layer including the TFT 30 and the scanning line 3a, a storage capacitor 70, a data line 6a, and the like. The third layer including the fourth layer including the shield layer 400 and the like, and the fifth layer (the uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. Further, the base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the second interlayer insulating film 42 is provided between the third layer and the fourth layer. A third interlayer insulating film 43 is provided between the fourth layer and the fifth layer, respectively, to prevent a short circuit between the aforementioned elements. The various insulating films 12, 41, 42 and 43 are also provided with contact holes for electrically connecting the high concentration source region 1d in the semiconductor layer 1a of the TFT 30 and the data line 6a, for example. Yes. Hereinafter, each of these elements will be described in order from the bottom.

  First, the first layer includes, for example, a single metal containing at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). A lower light-shielding film 11a made of an alloy, metal silicide, polysilicide, or a laminate of these is provided. The lower light-shielding film 11a is patterned in a lattice shape in plan view, thereby defining an opening area of each pixel (see FIG. 2). In the region where the scanning line 3a and the data line 6a of the lower light shielding film 11a intersect, a region protruding so as to round the corner of the pixel electrode 9a is formed. The lower light-shielding film 11a is formed so as to cover the TFT 30, the scanning line 3a, the data line 6a, the storage capacitor 70, and a third relay layer 402 described later when viewed from below. The lower light-shielding film 11a may be connected to a constant potential source extending from the image display region to the periphery thereof in order to prevent potential fluctuations from adversely affecting the TFT 30.

  Next, the TFT 30 and the scanning line 3a are provided as the second layer. As shown in FIG. 4, the TFT 30 has an LDD (Lightly Doped Drain) structure, and, as described above, the scanning line 3a that functions as a gate electrode, for example, a polysilicon film, is used as a scanning line. The channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by the electric field from 3a, the insulating film 2 including the gate insulating film that insulates the scanning line 3a from the semiconductor layer 1a, the low-concentration source region 1b in the semiconductor layer 1a, and the low A concentration drain region 1c, a high concentration source region 1d, and a high concentration drain region 1e are provided.

  The TFT 30 preferably has an LDD structure as shown in FIG. 4, but may have an offset structure in which impurities are not implanted into the low concentration source region 1b and the low concentration drain region 1c, or a part of the scanning line 3a. A self-aligned TFT may be used in which a high concentration source region and a high concentration drain region are formed in a self-aligned manner by implanting impurities at a high concentration using a gate electrode made of In the present embodiment, only one gate electrode of the pixel switching TFT 30 is disposed between the high-concentration source region 1d and the high-concentration drain region 1e. However, two or more gates are interposed between these gate electrodes. An electrode may be arranged. If the TFT is configured with dual gates or triple gates or more in this way, leakage current at the junction between the channel and the source and drain regions can be prevented, and the off-time current can be reduced. Further, the semiconductor layer 1a constituting the TFT 30 may be a non-single crystal layer or a single crystal layer. A known method such as a bonding method can be used for forming the single crystal layer. By making the semiconductor layer 1a a single crystal layer, it is possible to improve the performance of peripheral circuits in particular.

  A base insulating film 12 made of, for example, a silicon oxide film is provided on the lower light shielding film 11a described above and below the TFT 30. In addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11a, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened during the surface polishing or remains after cleaning. For example, the pixel switching TFT 30 has a function of preventing characteristic changes.

  In the present embodiment, in particular, the base insulating film 12 has a groove (a groove formed in a contact hole shape) having a width equal to or longer than the channel length on both sides of the semiconductor layer 1a in plan view. ) 12 cv is dug, and the scanning line 3 a stacked above the groove 12 cv includes a concavely formed portion on the lower side (in FIG. 2, it is not necessary to avoid complication). It was illustrated.) Further, since the scanning line 3a is formed so as to fill the entire groove 12cv, the horizontal protruding portion 3b formed integrally with the scanning line 3a is extended to the scanning line 3a. It has become. As a result, as shown in FIG. 2, the semiconductor layer 1a of the TFT 30 is covered from the side as seen in a plan view, so that at least light incident from this portion is suppressed. It has become. The horizontal protrusion 3b may be only on one side of the semiconductor layer 1a.

  Now, the storage capacitor 70 and the data line 6a are provided in the third layer after the second layer. The storage capacitor 70 includes a first relay layer 71 as a pixel potential side capacitor electrode electrically connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a, and a capacitor electrode 300 as a fixed potential side capacitor electrode. It is formed by being opposed to each other with the dielectric film 75 interposed therebetween. According to the storage capacitor 70, it is possible to remarkably improve the potential holding characteristic in the pixel electrode 9a. Further, as can be seen from the plan view of FIG. 2, the storage capacitor 70 according to the present embodiment is formed so as not to reach the light transmission region substantially corresponding to the formation region of the pixel electrode 9a. Then, it is formed so as to be within the light shielding region. That is, in the storage capacitor 70, the lower light-shielding film 11 rounds the corner of the pixel electrode 9a in the region overlapping the scanning line 3a between the adjacent data lines 6a and the corner where the scanning line 3a and the data line 6a intersect. Formed in the region. Accordingly, the pixel aperture ratio of the entire electro-optical device is maintained relatively large, and a brighter image can be displayed.

  More specifically, the first relay layer 71 is made of, for example, a light-absorbing conductive polysilicon film and functions as a pixel potential side capacitor electrode. However, the 1st relay layer 71 may be comprised from the single layer film or multilayer film containing a metal or an alloy. In the case of a multilayer film, the lower layer may be a light-absorbing conductive polysilicon film, and the upper layer may be a light-reflecting metal or alloy. In addition to the function as a pixel potential side capacitor electrode, the first relay layer 71 has a function of relay-connecting the pixel electrode 9a and the high concentration drain region 1e of the TFT 30 via the contact holes 83, 85 and 89. Have. As shown in FIG. 2, the first relay layer 71 is formed so as to have substantially the same shape as the planar shape of the capacitor electrode 300 described later.

  The capacitor electrode 300 functions as a fixed potential side capacitor electrode of the storage capacitor 70. In the first embodiment, in order to set the capacitor electrode 300 to a fixed potential, electrical connection is achieved through the contact hole 87 and the shield layer 400 set to the fixed potential.

  However, as will be described later, in the form in which the capacitor electrode 300 and the data line 6a are formed as separate layers, for example, the capacitor electrode 300 is preferably formed around the image display region 10a in which the pixel electrode 9a is disposed. The capacitor electrode 300 may be maintained at a fixed potential by taking a means such as extending and electrically connecting to a constant potential source. Incidentally, as the “constant potential source” described here, a constant potential source of a positive power source or a negative power source supplied to the data line driving circuit 101 may be used, or a constant potential source supplied to the counter electrode 21 of the counter substrate 20. It doesn't matter.

  In the present embodiment, in particular, the data line 6 a is formed as the same film as the capacitor electrode 300. Here, the “same film” means that they are formed as the same layer or simultaneously in the manufacturing process. However, the capacitor electrode 300 and the data line 6a are not continuously formed in a planar shape, but the two are separated for patterning.

  Specifically, as shown in FIG. 2, the capacitor electrode 300 is formed so as to overlap the formation region of the scanning line 3 a, that is, while being divided along the X direction in the drawing, and the data line 6 a is a semiconductor It is formed so as to overlap the longitudinal direction of the layer 1a, that is, to extend in the Y direction in the drawing. More specifically, the capacitor electrode 300 includes a main line portion extending along the scanning line 3a and a protruding portion (not shown in the drawing) that protrudes upward along the semiconductor layer 1a in a region adjacent to the semiconductor layer 1a in FIG. A portion that looks like a trapezoidal shape) and a constricted portion in which a portion corresponding to a contact hole 85 described later is slightly constricted. Of these, the protruding portion contributes to an increase in the formation region of the storage capacitor 70.

On the other hand, the data line 6a has a main line portion extending linearly along the Y direction in FIG. Note that the high-concentration drain region 1e at the upper end of the semiconductor layer 1a in FIG. 2 has a shape that is bent 90 degrees to the right so as to overlap the region of the protruding portion of the storage capacitor 70. This is to avoid the data line 6a and to electrically connect the semiconductor layer 1a and the storage capacitor 70 (see FIG. 4). Note that the lower light-shielding film 11 also exists in the formation region of the contact hole 83 that electrically connects the semiconductor layer 1 a and the first relay layer 71 of the storage capacitor 70.
In the present embodiment, patterning or the like is performed so as to exhibit the shape as described above, and the capacitor electrode 300 and the data line 6a are formed simultaneously.

Further, as shown in FIG. 4, the capacitor electrode 300 and the data line 6a are formed as a film having a two-layer structure of a layer made of conductive polysilicon in the lower layer and a layer made of aluminum in the upper layer. Among these, the data line 6a is electrically connected to the semiconductor layer 1a of the TFT 30 through a contact hole 81 penetrating an opening of a dielectric film 75 described later. The data line 6a is described above. In addition, since the first relay layer 71 is made of a conductive polysilicon film, the electrical connection between the data line 6a and the semiconductor layer 1a is directly conductive. This is realized by the polysilicon film. That is, in order from the bottom, the polysilicon film of the first relay layer, the polysilicon film below the data line 6a, and the aluminum film above it. Therefore, it is possible to maintain good electrical connection between the two. In this embodiment, the data line 6a and the capacitor line 300 have a two-layer structure of a conductive polysilicon layer and an aluminum layer, but have a three-layer structure of a conductive polysilicon layer, an aluminum layer, and a titanium nitride layer in order from the lower layer. May be.
According to this configuration, the titanium nitride layer functions as a barrier metal that prevents etching through when the contact hole 87 is opened. Further, since the capacitor electrode 300 and the data line 6a include aluminum that is relatively excellent in light reflection performance and includes polysilicon that is relatively excellent in light absorption performance, it can function as a light shielding layer. That is, according to these, it is possible to block the progress of incident light (see FIG. 4) on the semiconductor layer 1a of the TFT 30 on the upper side.

  As shown in FIG. 4, the dielectric film 75 is a silicon oxide film such as a relatively thin HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride film having a film thickness of about 5 to 200 nm, for example. Consists of From the viewpoint of increasing the storage capacitor 70, the thinner the dielectric film 75 is, the better as long as the reliability of the film is sufficiently obtained. In this embodiment, in particular, the dielectric film 75 has a two-layer structure as shown in FIG. 4, such as a silicon oxide film 75a in the lower layer and a silicon nitride film 75b in the upper layer. The upper silicon nitride film 75b is patterned so as to fit within the light shielding region (non-opening region). As a result, the presence of the silicon nitride film 75b having a relatively large dielectric constant makes it possible to increase the capacitance value of the storage capacitor 70. Nevertheless, the presence of the silicon oxide film 75a The pressure resistance of the storage capacitor 70 is not lowered. Thus, by making the dielectric film 75 have a two-layer structure, it is possible to enjoy two conflicting effects. Further, since the colored silicon nitride 75b is patterned so as not to be formed in a region where light is transmitted, it is possible to prevent the transmittance from being lowered. In addition, the presence of the silicon nitride film 75b makes it possible to prevent water from entering the TFT 30 in advance. As a result, in this embodiment, a situation in which the threshold voltage of the TFT 30 increases is not caused, and a relatively long-term apparatus operation is possible. In this embodiment, the dielectric film 75 has a two-layer structure, but depending on the case, for example, a three-layer structure such as a silicon oxide film, a silicon nitride film, and a silicon oxide film, Or you may comprise so that it may have more laminated structure.

  For example, NSG (non-silicate glass), PSG (phosphosilicate glass), BSG (boron silicate glass), BPSG (on the TFT 30 or the scanning line 3a described above and below the storage capacitor 70 or the data line 6a). A silicate glass film such as boron phosphorus silicate glass), a silicon nitride film, a silicon oxide film, or the like, or a first interlayer insulating film 41 preferably made of NSG is formed. The first interlayer insulating film 41 is provided with a contact hole 81 for electrically connecting the high concentration source region 1d of the TFT 30 and the data line 6a. The first interlayer insulating film 41 is provided with a contact hole 83 that electrically connects the high-concentration drain region 1e of the TFT 30 and the first relay layer 71 constituting the storage capacitor 70.

  Of these two contact holes, in the portion where the contact hole 81 is formed, the dielectric film 75 is not formed, in other words, an opening is formed in the dielectric film 75. Yes. This is because in the contact hole 81, it is necessary to achieve electrical conduction between the high-concentration source region 1b and the data line 6a via the first relay layer 71. Incidentally, if such an opening is provided in the dielectric film 75, in the case of performing a hydrogenation process on the semiconductor layer 1a of the TFT 30, hydrogen used for the process is transferred to the semiconductor layer 1a through the opening. It is also possible to obtain an operational effect that it can be easily reached.

  In the present embodiment, the first interlayer insulating film 41 is baked at about 1000 ° C. to activate ions implanted into the polysilicon film constituting the semiconductor layer 1a and the scanning line 3a. May be.

  Now, a light-shielding shield layer 400 is formed on the fourth layer after the third layer. When viewed in plan, the shield layer 400 is formed in a lattice shape so as to extend in the X direction and the Y direction in FIG. 2, as shown in FIGS. A portion of the shield layer 400 extending in the Y direction in FIG. 2 is formed so as to cover the data line 6a and wider than the data line 6a. In addition, the portion extending in the X direction in FIG. 2 has a cutout portion near the center of one side of each pixel electrode 9a in order to secure a region for forming a third relay electrode 402 described later. . Further, at the corners of the intersecting portions of the shield layers 400 extending in the XY directions in FIG. 2, a substantially triangular portion is provided so as to correspond to the substantially trapezoidal protrusion of the capacitor electrode 300 described above. It has been. The light shielding shield layer 400 may have the same width as the lower light shielding film 11a, or may be wider or narrower than the lower light shielding film 11a. However, except for the third relay layer 402, the TFT 30, the scanning line 3a, the data line 6a, and the storage capacitor 70 are formed so as to cover when viewed from above. The shield layer 400 and the lower light-shielding film 11 define the corners of the pixel opening region, that is, the four corners and the sides of the pixel opening region.

  The shield layer 400 extends from the image display region 10a in which the pixel electrode 9a is disposed to the periphery thereof, and is electrically connected to a constant potential source to have a fixed potential. The “constant potential source” described here may be a positive power source or a negative power source supplied to the data line driving circuit 101 or a constant potential source supplied to the counter electrode 21 of the counter substrate 20. It doesn't matter.

  Thus, the capacitance formed between the data line 6a and the pixel electrode 9a is formed so as to cover the entire data line 6a (see FIG. 3), and the presence of the shield layer 400 at a fixed potential. It becomes possible to eliminate the influence of coupling. That is, it is possible to avoid a situation in which the potential of the pixel electrode 9a fluctuates in response to the energization of the data line 6a, and the possibility of causing display unevenness along the data line 6a on the image. Can be reduced. In the present embodiment, since the shield layer 400 is also formed in a lattice shape, it is possible to suppress this so that unnecessary capacitance coupling does not occur in the portion where the scanning line 3a extends. ing. Further, the above-described triangular portion of the shield layer 400 can eliminate the influence of the capacitive coupling that occurs between the capacitive electrode 300 and the pixel electrode 9a. An effect will be obtained.

  In the fourth layer, a third relay layer 402 as an example of the “relay layer” according to the present invention is formed as the same film as the shield layer 400. The third relay layer 402 has a function of relaying an electrical connection between the first relay layer 71 constituting the storage capacitor 70 and the pixel electrode 9a through a contact hole 89 described later. The shield layer 400 and the third relay layer 402 are not continuously formed in a planar shape as in the case of the capacitor electrode 300 and the data line 6a described above, but the two are separated by patterning. It is formed so that.

  On the other hand, the shield layer 400 and the third relay layer 402 described above have a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride. As a result, first, titanium nitride is expected to be effective as a barrier metal for preventing etching penetration when the contact hole 89 is opened. In the third relay layer 402, the lower layer made of aluminum is connected to the first relay layer 71 constituting the storage capacitor 70, and the upper layer made of titanium nitride is connected to the pixel electrode 9a made of ITO or the like. It has come to be. In this case, the latter connection is particularly good. In this regard, if the form in which aluminum and ITO are directly connected is taken, electrocorrosion occurs between the two, and a preferable electrical connection is obtained due to disconnection of aluminum or insulation due to formation of alumina. In contrast to not being realized. As described above, in this embodiment, since the electrical connection between the third relay layer 402 and the pixel electrode 9a can be satisfactorily realized, voltage application to the pixel electrode 9a or potential holding characteristics in the pixel electrode 9a is achieved. Can be maintained well.

  Furthermore, since the shield layer 400 and the third relay layer 402 include aluminum that is relatively excellent in light reflection performance and include titanium nitride that is relatively excellent in light absorption performance, the shield layer 400 and the third relay layer 402 can function as a light shielding layer. That is, according to these, it is possible to block the progress of the incident light (see FIG. 2) on the semiconductor layer 1a of the TFT 30 on the upper side. As described above, this can be similarly applied to the capacitor electrode 300 and the data line 6a. In the present embodiment, the shield layer 400, the third relay layer 402, the capacitor electrode 300, and the data line 6 a form a part of the laminated structure constructed on the TFT array substrate 10, and light from the upper side with respect to the TFT 30. It can function as an “internal light shielding film” if attention is paid to the fact that it constitutes an upper light shielding film that blocks incidence or “part of a laminated structure”. According to the concept of “upper light shielding film” or “built-in light shielding film”, in addition to the above-described configuration, the scanning line 3a, the first relay layer 71, and the like can also be considered to be included therein. In short, under the premise to be understood in the broadest sense, a configuration made of an opaque material constructed on the TFT array substrate 10 can be called an “upper light shielding film” or “built-in light shielding film”.

  Above the data line 6a described above and below the shield layer 400, a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, or preferably NSG is used. A two-layer insulating film 42 is formed. In the second interlayer insulating film 42, a contact hole 87 for electrically connecting the shield layer 400 and the capacitor electrode 300, and the third relay layer 402 and the first relay layer 71 are electrically connected. Contact holes 85 for connection are opened. In the first embodiment, since the third relay layer 402 is formed, the electrical connection between the pixel electrode 9a and the TFT 30 is made through the three contact holes 83, 85, and 89, that is, This is performed through three interlayer insulating films 41, 42 and 43. In this way, if a relatively short contact hole is connected to achieve electrical connection between the pixel electrode 9a and the TFT 30, the short contact is achieved rather than realizing it with a relatively long contact hole. Due to the ease of manufacturing the holes, there is an advantage that the electro-optical device can be manufactured at a lower cost and with higher reliability.

  Note that the second interlayer insulating film 42 may not be baked as described above with respect to the first interlayer insulating film 41, so that stress generated near the interface of the capacitor electrode 300 may be reduced.

  Finally, as described above, the pixel electrodes 9a are formed in a matrix on the fifth layer, and the alignment film 16 is formed on the pixel electrodes 9a. The pixel electrode 9a may have a shape with a cut corner. A third interlayer insulating film 43 made of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or preferably BPSG is formed under the pixel electrode 9a. In the third interlayer insulating film 43, a contact hole 89 for electrically connecting the pixel electrode 9a and the third relay layer 402 is formed. In the present embodiment, in particular, the surface of the third interlayer insulating film 43 is planarized by CMP (Chemical Mechanical Polishing) processing or the like, and a liquid crystal layer caused by steps due to various wirings, elements, etc. existing therebelow. 50 orientation defects are reduced. However, not only the planarization process is performed on the third interlayer insulating film 43 as described above, but also at least one of the TFT array substrate 10, the base insulating film 12, the first interlayer insulating film 41, and the second interlayer insulating film 42. A planarization process may be performed by digging a groove and embedding a wiring such as the data line 6a or the TFT 30 or the like. Alternatively, the planarization process may be performed using only the above-described trench without performing the planarization process on the third interlayer insulating film 43.

  The electro-optical device according to the present embodiment configured as described above has the following operational effects.

  First, in the above-described electro-optical device, the scanning line 3a, the data line 6a, the storage capacitor 70, and the shield layer 400 are complementary to a region where the pixel electrode 9a is not formed, that is, a region where the pixel electrode 9a is formed. It is formed in a certain light shielding area (see FIG. 2). This realizes a configuration in which various elements in the stacked structure are not located in the pixel electrode formation region that substantially matches the light transmission region. The electro-optical device according to this embodiment has an extremely high aperture ratio. It can be realized and maintained.

  In addition, in the present embodiment, although various elements such as the storage capacitor 70 and the shield layer 400 are formed so as to be confined in the light-shielding region, there is a particular problem with respect to the operation of the electro-optical device. not. That is, for the storage capacitor 70, as described above, since the dielectric film 75 as a constituent element includes the silicon nitride film 75b having a relatively large dielectric constant, the storage capacitor 70 is confined in the light shielding region. Alternatively, even if it is formed so as to suppress the planar spread to some extent, it is possible to enjoy sufficient charge storage characteristics. Since the shield layer 400 is formed so as to cover at least the data line 6a as well shown in FIG. 2, the data line 6a and the pixel electrode 9a are directly opposed to each other. In other words, the effect of eliminating the influence of capacitive coupling can be fully enjoyed.

  As described above, according to the electro-optical device according to the present embodiment, an image having a high quality such as brighter can be displayed by achieving a high aperture ratio and a high contrast.

(Second embodiment: When the shield layer and the data line are formed in separate layers)
Hereinafter, an electro-optical device according to a second embodiment of the invention will be described with reference to FIGS. FIG. 5 is a plan view of the plural pixel groups adjacent to each other on the TFT array substrate on which data lines, scanning lines, pixel electrodes, and the like are formed. 6 is a view having the same purpose as FIG. 3, and is a cross-sectional view taken along the line AA ′ of FIG. Further, FIG. 7 is a plan view showing a nitride film formation mode characteristic in the second embodiment. Note that the electro-optical device according to the second embodiment has substantially the same configuration as that of the pixel portion of the electro-optical device according to the first embodiment. Accordingly, in the following description, only the characteristic part of the second embodiment will be described, and the description of the remaining part will be omitted or simplified as appropriate.

  In the second embodiment, as shown in FIG. 6, compared to FIG. 4, the capacitor electrode 300, which is the upper electrode constituting the storage capacitor 70, and the data line 6a are not configured as the same film. Therefore, the number of interlayer insulating films has been increased. That is, there is a significant difference in that a “fourth interlayer insulating film 44” is newly provided and a relay electrode 719 is formed as the same film as the gate electrode 3aa. Thereby, in order from the TFT array substrate 10, the first layer including the lower light-shielding film 11 a serving also as the scanning line, the second layer including the TFT 30 having the gate electrode 3 aa, the third layer including the storage capacitor 70, and the data line A fourth layer including 6a and the like, a fifth layer on which the shield layer 404 is formed, and a sixth layer (uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. Further, the base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the second interlayer insulating film 42 is provided between the third layer and the fourth layer. A third interlayer insulating film 43 is provided between the fourth layer and the fifth layer, and a fourth interlayer insulating film 44 is provided between the fifth layer and the sixth layer, so that the above-described elements are short-circuited. Is preventing.

  Furthermore, instead of the scanning line 3a being formed in the second layer in the first embodiment, in the second embodiment, a gate electrode 3aa is formed in place of the scanning line 3a, and the same film is formed therewith. A relay electrode 719 is newly formed. Hereinafter, the configuration in each layer will be described in more detail.

  First, in the second layer, a gate electrode 3aa is formed so as to face the channel region 1a ′ of the semiconductor layer 1a. The gate electrode 3aa is not formed in a line shape like the scanning line 3a of the first embodiment, and the semiconductor layer 1a or the channel region 1a ′ is formed in an island shape on the TFT array substrate 10. Depending on the shape, it is formed in an island shape. In the second embodiment, accordingly, the bottom of the groove 12cv forming the contact hole has a depth in contact with the surface of the lower light shielding film 11a of the first layer, and the lower light shielding film. 11a is formed in a stripe shape extending in the X direction in FIG. As a result, the gate electrode 3aa formed on the groove 12cv is electrically connected to the lower light-shielding film 11a via the groove 12cv. That is, in the second embodiment, a scanning signal is supplied to the gate electrode 3aa through the lower light shielding film 11a. In other words, the lower light shielding film 11a of the second embodiment serves as a scanning line.

  Note that the lower light-shielding film 11a in the second embodiment has a protruding portion along the direction in which the data line 6a extends, as shown in FIG. Thus, the lower light shielding film 11a of the second embodiment also exhibits a light shielding function comparable to the lattice-shaped lower light shielding film 11a in the first embodiment. However, the protrusions extending from the adjacent lower light-shielding films 11a are not in contact with each other and are electrically insulated from each other. Otherwise, the lower light shielding film 11a cannot function as a scanning line. The lower light-shielding film 11a has a region protruding so as to round the corner of the pixel electrode 9a in a region intersecting with the data line 6a. The lower light shielding film 11a covers the TFT 30, the scanning line 3a, the data line 6a, the storage capacitor 70, the shield relay layer 6a1, the second relay layer 6a2, and the third relay layer 406 when viewed from below. Is formed.

  In the second embodiment, in particular, the relay electrode 719 is formed as the same film as the gate electrode 3aa described above. As shown in FIG. 5, the relay electrode 719 is formed in an island shape so as to be positioned substantially at the center of one side of each pixel electrode 9a as viewed in a plan view. Since the relay electrode 719 and the gate electrode 3aa are formed as the same film, when the latter is made of a conductive polysilicon film or the like, the former is also made of a conductive polysilicon film or the like.

Next, a first relay layer 71, a dielectric film 75, and a capacitor electrode 300 constituting the storage capacitor 70 are formed in the third layer. Of these, the first relay layer 71 is made of polysilicon. The capacitor electrode 300 is no longer formed at the same time as the data line 6a. Therefore, as in the first embodiment, in order to pay attention to the electrical connection between the data line 6a and the TFT 30, aluminum is used. It is not always necessary to have a two-layer structure of a film and a conductive polysilicon film. Therefore, the capacitor electrode 300 includes, for example, at least one of refractory metals such as Ti, Cr, W, Ta, and Mo, as well as the lower light-shielding film 11a, a simple metal, an alloy, a metal silicide, It is good to comprise from light-shielding materials, such as polysilicide and what laminated | stacked these. According to this, the capacitor electrode 300 can better exhibit the function as the above-described “upper light-shielding film” or “built-in light-shielding film” (however, regarding materials constituting the capacitor electrode 300 according to the second embodiment) , See below). Further, for the same reason, that is, by forming the capacitor electrode 300 and the data line 6a in separate layers, it is not necessary to achieve electrical insulation between them in the same plane. Therefore, the capacitor electrode 300 can be formed as a part of the capacitor line extending in the direction of the scanning line 3a.
Since the storage capacitor 70 is formed between the TFT 30 and the data line 6a, it is formed in a cross shape in the extending direction of the scanning line 3a and the extending direction of the data line 6a as shown in FIG. . Thereby, the storage capacity can be increased, and the light shielding property to the TFT 30 can be enhanced by the light shielding capacity electrode 300. Further, if the storage capacitor 70 is formed at the corner of the pixel electrode 6a where the lower light-shielding film 11 and the shield layer 400 are formed, the storage capacitor can be further increased and the light shielding property can be improved.

  The first interlayer insulating film 41 is formed on the gate electrode 3aa and the relay electrode 719 and the storage capacitor 70 described above. The first interlayer insulating film 41 is substantially the same as described above. Further, it may be formed of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like. Further, a contact hole 881 is formed in the first interlayer insulating film 41 so as to have an electrical connection point on the lower surface of the first relay layer 71 in FIG. As a result, electrical connection between the first relay layer 71 and the relay electrode 719 is achieved. The first interlayer insulating film 41 has a contact hole 882 opened so as to penetrate the second interlayer insulating film 42, which will be described later, for electrical connection with a second relay layer 6a2 described later. Has been.

  On the other hand, in the fourth layer, the data line 6a may be made of aluminum alone or an aluminum alloy.

  In the second embodiment, in particular, the data line 6a made of aluminum or the like as described above includes, in order from the lower layer, a layer made of aluminum (see reference numeral 41A), a layer made of titanium nitride (see reference numeral 41TN), and nitriding. It is formed as a film having a three-layer structure of a layer made of a silicon film (see reference numeral 401). The silicon nitride film 401 is patterned to a slightly larger size so as to cover the lower aluminum layer and titanium nitride layer. Of these, the data line 6a contains aluminum, which is a relatively low resistance material, so that the supply of image signals to the TFT 30 and the pixel electrode 9a can be realized without delay. On the other hand, the formation of a silicon nitride film that is relatively excellent in preventing moisture from entering on the data line 6a can improve the moisture resistance of the TFT 30, and can achieve a long life. The silicon nitride film is preferably a plasma silicon nitride film.

  Silicon nitride film 401 Further, the silicon nitride film 401 according to the present embodiment includes the pixel electrodes 9a arranged in a matrix in addition to the data lines 6a, and the data lines 6a and the scanning lines arranged so as to sew the gaps therebetween. A square shape is also formed around the image display area 10a defined as the area where the 3a is formed. Note that the thickness of the titanium nitride film and the silicon nitride film 401 is, for example, about 10 to 100 nm, more preferably about 10 to 30 nm.

  As described above, the silicon nitride film 401 according to the present embodiment is formed on the TFT array substrate 10 in a shape as schematically shown in FIG. In FIG. 7, a silicon nitride film 401 existing around the image display region 10a prevents moisture from entering a CMOS (Complementary MOS) TFT constituting a data line driving circuit 101 and a scanning line driving circuit 104 described later. (See FIG. 19). However, since nitride is expected to have a lower etching rate in dry etching or the like than other general materials, this is the case when the silicon nitride film 401 is formed in the region around the image display region 10a. When a contact hole or the like needs to be formed in the region, a hole corresponding to the position of the contact hole is preferably formed in the silicon nitride film 401 in advance. If this is performed together with the patterning as shown in FIG. 7, it contributes to simplification of the manufacturing process.

  Further, the fourth layer is made of the same film as the data line 6a, and the relay layer 6a1 for the shield layer and the second relay layer 6a2 (however, the meaning is slightly different from the “second relay layer” in the first embodiment). Is formed. Among these, the former is a relay layer for electrically connecting the light shielding shield layer 404 and the capacitor electrode 300, and the latter is for electrically connecting the pixel electrode 9 a and the first relay layer 71. It is a relay layer. Needless to say, these are made of the same material as the data line 6a.

As described above, the second interlayer insulating film 42 is formed on the storage capacitor 70 and below the data line 6a, the shielding relay layer 6a1, and the second relay layer 6a2. The film 42 may be composed of a silicate glass film such as NSG, PSG, BSG, or BPSG, a silicon nitride film, a silicon oxide film, or the like, substantially as described above.
When aluminum is used for the capacitor electrode 300, it is necessary to form a film at a low temperature by plasma CVD. In addition, a contact hole 801 and the contact hole 882 are formed in the second interlayer insulating film 42 so as to correspond to the shield layer relay layer 6a1 and the second relay layer 6a2.

  Next, a light shielding shield layer 404 is formed on the fifth layer. For example, similar to the shield layer 400 described above, it may have a two-layer structure in which an upper layer is made of titanium nitride and a lower layer is made of aluminum. In some cases, ITO or other conductive material may be used. You may comprise. The shield layer 404 is electrically connected to the capacitor electrode 300 via the shield layer relay layer 6a1 described above. As a result, the shield layer 404 is set to a fixed potential, and the influence of capacitive coupling generated between the pixel electrode 9a and the data line 6a is eliminated as in the first embodiment. The light shielding shield layer 400 may have the same width as the lower light shielding film 11a, or may be wider or narrower than the lower light shielding film 11a. However, except for the third relay layer 406, the TFT 30, the scanning line 3a, the data line 6a, and the storage capacitor 70 are formed so as to cover when viewed from above. The shield layer 400 and the lower light-shielding film 11 define the corners of the pixel opening region, that is, the four corners and the sides of the pixel opening region. In addition, a third relay layer 406 is formed on the fifth layer as the same film as the shield layer 404.

  The third interlayer insulating film 43 is formed on the data line 6 a and the shield layer 404 described above. The material constituting the third interlayer insulating film 43 may be the same as that of the second interlayer insulating film 42 described above. However, when the data line 6a or the like contains aluminum or the like as described above, the third interlayer insulating film 43 is preferably formed at a low temperature by plasma CVD or the like in order to avoid exposing it to a high temperature environment. It is preferable to use a film method.

  The third interlayer insulating film 43 is provided with a contact hole 803 for electrically connecting the shield layer 404 and the shield layer relay layer 6a1 to the second relay layer 6a2. A contact hole 804 corresponding to the third relay layer 406 is formed.

  In the remaining structure, the pixel electrode 9a and the alignment film 16 are formed in the sixth layer, and the fourth interlayer insulating film 44 is formed between the sixth layer and the fifth layer. 44, a contact hole 89 for electrically connecting the pixel electrode 9a and the third relay layer 406 is opened.

  In the above-described configuration, the third relay layer 406 is in direct contact with the pixel electrode 9a made of ITO or the like. Therefore, considering this, it is preferable that the shield layer 404 and the third relay layer 406 have a two-layer structure made of aluminum and titanium nitride, as in the first embodiment. Further, even if the shield layer 404 and the third relay layer 406 are made of ITO, between the shield layer 404 and the shield layer relay layer 6 a 1 or between the third relay layer 406 and the second relay layer 6 a 2, ITO and aluminum Since direct contact can be avoided, there is no need to worry about the occurrence of electrical corrosion. Alternatively, in the second embodiment, as described above, the capacitive electrode 300 can be configured as a part of the capacitive line. Therefore, in order to set the capacitive electrode 300 to a fixed potential, the capacitive line is placed in the image display area. The configuration may be such that it extends to the outside of 10a and is connected to a constant potential source. In this case, furthermore, the capacitor line including the capacitor electrode 300 can be connected to the constant potential source by itself, and the shield layer 404 can also be connected to the constant potential source by itself. Therefore, when such a configuration is adopted, it is not necessary to provide contact holes 801 and 803 for electrically connecting the two. Therefore, in this case, when selecting the material constituting the shield layer 404 and the capacitor electrode 300 or selecting the material of the shield layer relay layer 6a1, the shield relay layer 6a1 is no longer necessary in the first place. There is no need to consider the occurrence of “electric corrosion”.

  In the electro-optical device according to the second embodiment configured as described above, it is apparent that substantially the same effects as those in the first embodiment described above are exhibited. That is, as in the first embodiment, it is possible to display a high quality image such as brighter by achieving a high aperture ratio and high contrast.

  In the second embodiment, in particular, the moisture resistance of the TFT 30 can be further improved by forming the silicon nitride film 401 on the data line 6a and on the periphery of the image display region 10a. Become. That is, as described above, the nitride film or nitride is excellent in the action of preventing the intrusion or diffusion of moisture, so that it is possible to prevent the moisture from entering the semiconductor layer 1a of the TFT 30 in advance. In the second embodiment, in addition to this, a nitride film can be used in the shield layer 404, the third relay layer 406, and the like, and the dielectric film 75 constituting the storage capacitor 70. If a film is provided, the water intrusion prevention action is more effectively exhibited. However, it is needless to say that a “nitride film” may not be provided for all.

  In the second embodiment, since the silicon nitride film 401 exists only on the data line 6a except for the area outside the image display area 10a in the new fourth layer, a large internal stress is concentrated. In other words, the silicon nitride film 401 itself breaks down due to its internal stress, or the stress acts on the outside, so that the silicon nitride film 401 exists around the silicon nitride film 401, for example, the third interlayer insulating film 43, etc. There is no such thing as causing cracks. Such a situation is clearer if a case where the nitride film is provided on the entire surface of the TFT array substrate 10 is assumed.

  Furthermore, the titanium nitride film and the silicon nitride film 401 in the second embodiment have a relatively small thickness of about 10 to 100 nm, more preferably about 10 to 30 nm. Can be enjoyed more effectively.

  In addition, since the relay electrode 719 is provided particularly in the second embodiment, the following operational effects can be obtained. That is, in FIG. 4, in order to achieve electrical connection between the TFT 30 and the pixel electrode 9a, the first relay layer 71, which is a lower layer electrode constituting the storage capacitor 70, like the contact hole 85 in FIG. It was necessary to make contact at the “upper surface” in the figure.

  However, in such a form, when the precursor films are etched in the formation process of the capacitor electrode 300 and the dielectric film 75, the first relay layer 71 located immediately below the first relay layer 71 remains healthy, A very difficult manufacturing process has to be carried out, that is to carry out the etching of the precursor film. In particular, when a high dielectric constant material is used as the dielectric film 75 as in the present invention, the etching is generally difficult, and the etching rate of the capacitor electrode 300 and the etching rate of the high dielectric constant material are uneven. Since the conditions such as become overlapped, the difficulty of the manufacturing process is further increased. Therefore, in such a case, the first relay layer 71 is likely to cause a so-called “penetration” or the like. In this case, in a bad case, there is a possibility that a short circuit is caused between the capacitor electrode 300 and the first relay layer 71 constituting the storage capacitor 70.

  However, as in this embodiment, by providing the relay electrode 719, an electrical connection point is provided on the “lower surface” of the first relay layer 71 in the drawing, thereby realizing electrical connection between the TFT 30 and the pixel electrode 9a. By doing so, the above-described problems do not occur. This is because, as is apparent from FIG. 6, in this embodiment, there is no need for the step of leaving the first relay layer 71 while etching the precursor film of the capacitor electrode 300 and the dielectric film 75.

  As described above, according to this embodiment, since it is not necessary to go through the difficult etching process as described above, the electrical connection between the first relay layer 71 and the pixel electrode 9a can be satisfactorily realized. This is nothing but the electrical connection between the two through the relay electrode 719. Furthermore, for the same reason, according to the present embodiment, the possibility that a short circuit occurs between the capacitor electrode 300 and the first relay layer 71 is very small. That is, it is possible to suitably form the storage capacitor 70 without defects.

  In addition, particularly in the second embodiment, as described above, the capacitor electrode 300 can be formed as a part of the capacitor line, so that each of the capacitor electrodes provided for each pixel is provided. For example, it is not necessary to separately provide a conductive material or the like for setting these to a fixed potential, and a mode in which each capacitor line is connected to a fixed potential source may be employed. Therefore, according to the present embodiment, the manufacturing process can be simplified or the manufacturing cost can be reduced.

  In addition, the capacitor line including the capacitor electrode as described above may be formed to have a two-layer structure including an aluminum film and a polysilicon film as in the first embodiment. If the capacitor line includes an aluminum film, it is possible to enjoy high electrical conductivity in the capacitor line. Thereby, in such a configuration, the capacitance line can be narrowed, that is, the storage capacitor 70 can be narrowed without any special restriction. Therefore, in the second embodiment, the aperture ratio can be further improved. In other words, in other words, since the capacitance line has conventionally been composed of a single material such as polysilicon or WSi, the material has high resistance when narrowed to increase the aperture ratio. Therefore, crosstalk, burn-in, and the like have occurred, but in the second embodiment, there is no risk of suffering such a problem.

  Incidentally, in such a form, since the aluminum film has light reflectivity and the polysilicon film has light absorption, the capacitor line functions as a light shielding layer as described in the first embodiment. You can also expect. Furthermore, in such a capacity line, the internal stress can be reduced compared to the conventional case (the internal stress of aluminum is smaller than that of WSi or the like). Therefore, in this embodiment, the third interlayer insulating film 43 and the like that are in contact with the capacitor line can be made as thin as possible, and the electro-optical device can be further miniaturized.

(Third Embodiment: Configuration of Storage Capacity)
Hereinafter, the configuration of the storage capacitor in the second embodiment, more specifically, the configuration in the case where the storage capacitor is configured in a three-dimensional manner will be described with reference to FIGS. 8 and 9. 8 is a cross-sectional view taken along the line BB ′ of FIG. 5 when a storage capacitor 70DFB having a three-dimensional structure as will be described later is formed, and FIG. 9 is the storage capacitor 70DFB corresponding to one pixel. It is a perspective view which shows these three-dimensional structures. 9 does not illustrate all the configurations shown in FIGS. 5 and 6. For example, some elements such as the dielectric film 75 constituting the storage capacitor 70DFB are illustrated as appropriate. It has been omitted. In FIG. 9, for simplicity, the capacitor electrode 300DFB is not drawn as having a two-layer structure.

  8 and 9, the storage capacitor 70DFB includes a portion formed along the direction in which the semiconductor layer 1a or the data line 6a extends (hereinafter referred to as “three-dimensional portion”) and the lower light-shielding film 11a. The portion formed along the extending direction (hereinafter, referred to as “planar portion”) is roughly composed of two portions.

  In the former three-dimensional part, a convex portion 71DFBA is formed as a part of the first relay layer 71DFB, and the dielectric film and the capacitive electrode 300DFB are formed on the convex portion 71DFBA, so that the capacitor is formed. It is configured. Accordingly, the storage capacitor 70DFB has a structure including a portion in which the first relay layer 71DFB, the dielectric film, and the capacitor electrode 300DFB form a laminated structure along a plane rising from the surface of the substrate. The cross-sectional shape of the storage capacitor 70DFB includes a convex shape.

  Here, the height of such a convex shape or the height H of the convex portion 71DFBA (see FIG. 9) is preferably about 50 to 1000 nm. If it is below this range, the effect of increasing the storage capacity cannot be sufficiently obtained, and if it is above this range, the step becomes too large, resulting in disadvantages such as poor alignment in the liquid crystal layer 50 due to the step. This is because

  On the other hand, the latter planar portion is formed so that the first relay layer 71DFB, the dielectric film, and the capacitor electrode 300DFB have a laminated structure, all having a planar shape along a plane parallel to the surface of the substrate. Has been.

  And such a three-dimensional part and a planar part each have a continuous structure. That is, between the two portions, the first relay layer 71DFB is the first relay layer 71DFB, and the capacitive electrode 300DFB is the capacitive electrode 300DFB, which has an integral structure, and constitutes a single capacitor as a whole. More specifically, when the first relay layer 71 is viewed in plan, as clearly shown in FIG. 9, a portion extending along the direction of the data line 6a and extending between the two contact holes 81, and a lower portion from the portion. A portion extending in the direction of the side light-shielding film 11 a and extending to the adjacent TFTs 30 has a so-called “T-shaped” shape. Further, when the capacitor electrode 300 is viewed in a plan view, as already described, the capacitor electrode 300 is formed so as to overlap the lower light shielding film 11a, and more specifically, the main line portion extending along the lower light shielding film 11a. And protrusions protruding upward and downward along the data line 6a from each portion intersecting the data line 6a. Among these, the protruding portion contributes to an increase in the formation region of the storage capacitor 70DFB by utilizing the region on the lower light shielding film 11a and the region below the data line 6a.

  Incidentally, the portion extending to the data line 6a of the storage capacitor 70 is formed as a three-dimensional portion including a convex shape, as described above, so that as shown in FIG. A convex portion 43A is formed on the surface of the formed interlayer insulating film via the shield layer 404 and the like. In other words, in FIG. 8, a barrier is provided between the pixel electrodes 9a adjacent to each other in the left-right direction.

  As can be seen from FIG. 9, the storage capacitor 70DFB having such a configuration is formed so as to be confined in the light-shielding region including the formation region of the scanning line 3a and the data line 6a. There is nothing to bring about.

  In the electro-optical device according to the present embodiment having such a configuration, the following operational effects are exhibited due to the presence of the storage capacitor 70DFB.

  First, in the present embodiment, since the cross-sectional shape of the storage capacitor 70DFB is configured to include a convex shape, the effect of increasing the capacity can be expected only in the area of the side surface of the convex shape. This will become clear from a comparison between FIG. 9 already referred to and FIG. 10 showing a configuration example of the storage capacitor 70 which is a diagram having the same purpose as that of FIG. In FIG. 10, the storage capacitor 70 has data as shown in FIG. 9 because the lower electrode and the upper electrode are constituted by the relay layer 71 and the capacitor electrode 300 formed in a plane. The three-dimensional portion along the line 6a does not exist (corresponding to the storage capacitor 70 shown in the sectional view of FIG. 6).

  As is apparent from FIGS. 9 and 10, in this embodiment, the convex portion 71DFBA having a height H is a part of the first relay layer 71DFBA by a length corresponding to the distance L between the contact holes 81 and 83. Therefore, it can be seen that the storage capacitor 70DFB whose area is increased by approximately 2HL as a whole is configured in FIG. 9 as compared with FIG. Here, “L” represents the length of the capacitor electrode 300DFB along the data line 6a. Needless to say, the area of 2HL corresponds to the area of the side wall portion of the three-dimensional portion.

  Therefore, according to the present embodiment, the area of the capacitor electrode 300DFB as the fixed potential side capacitor electrode and the first relay layer 71DFB as the pixel potential side capacitor electrode constituting the storage capacitor 70DFB is increased in a planar manner. Since the capacity can be increased, it is possible to increase the storage capacity 70DFB while maintaining a high aperture ratio, thereby displaying a high-quality image free from display unevenness and flickering. It will be possible.

Further, in the present embodiment, as described above, in order that the cross-sectional shape of the storage capacitor 70DFB includes a convex shape, the first relay layer 71DFB is formed with a convex portion 71DFBA as a part thereof. Therefore, the manufacture is easy.
That is, since the convex portion 71DFBA or the convex shape can be formed during the formation process of the first relay layer 71DFB, for example, a material is separately prepared or another process is performed to form the convex shape. In view of this, manufacturing costs can be reduced accordingly.

  Furthermore, in the present embodiment, since the portion including the convex shape of the storage capacitor 70DFB is formed along the data line 6a, the following effects can be obtained. That is, when the electro-optical device according to this embodiment is driven by the 1S inversion driving method, it is possible to suppress the generation of a lateral electric field generated between adjacent pixel electrodes across the data line 6a. It is. As shown in FIG. 8, the second interlayer insulating film 42, the shield layer 404, etc. are formed on the surface of the fourth interlayer insulating film 44 formed on the convex portion 71DFBA which is a part of the first relay layer 71DFB. This is because the convex portion 43A is formed through the. That is, first, if the pixel electrode 9a is formed so that the edge of the pixel electrode 9a is on the convex portion 43A, the distance between the counter electrode 21 and the pixel electrode 9a is set to G1 as shown in FIG. This is because the vertical electric field, that is, the electric field applied in the vertical direction in FIG. 8 can be increased accordingly.

  Second, regardless of whether or not the edge of the pixel electrode 9a exists on the convex portion 43A, the lateral electric field itself can be weakened depending on the dielectric constant of the convex portion 43A. Third, as the gap between the convex portion 43A and the counter electrode 21 is narrowed from G1 to G3 as shown in FIG. 8, the volume, that is, the volume of the liquid crystal layer 50 located in the gap. This is because the influence of the transverse electric field on the liquid crystal layer 50 can be made relatively small.

  As described above, according to the present embodiment, it is possible to suppress the generation of a lateral electric field that may be generated across the data line 6a. Therefore, the alignment state of the liquid crystal molecules in the liquid crystal layer 50 due to the lateral electric field. Therefore, it is possible to reduce the possibility that the image is disturbed, so that a high-quality image can be displayed.

  8 and 9, the cross-sectional shape of the convex portion 71DFBA is rectangular, but the present invention is not limited to such a form. For example, the cross-sectional shape may be a substantially trapezoidal shape (that is, the convex portion 71DFBA has a substantially trapezoidal shape in the viewpoint of FIG. 8). In this case, when the dielectric film and the capacitor electrode 300DFB as the upper electrode are formed on the convex portion, there is no angular portion as shown in FIGS. There is almost no need to worry about deterioration. Therefore, according to such an aspect, it is possible to preferably form the dielectric film and the capacitor electrode.

(Fourth Embodiment: Modified Embodiment of Interlayer Insulating Film as Base of Pixel Electrode)
In the following, as a fourth embodiment of the present invention, a configuration relating to the third interlayer insulating film 43 disposed as a base of the pixel electrode 9a in the electro-optical device according to the first embodiment described above, more specifically, the third embodiment. Matters related to the modification of the planarization process for the interlayer insulating film 43 will be described with reference to FIGS. FIG. 11 is an explanatory diagram for explaining a mechanism for generating a transverse electric field. FIG. 12 is a view having the same concept as that of FIG. 6 relating to the electro-optical device of the second embodiment described above, in which a convex portion for preventing the generation of a lateral electric field is provided (however, accumulation) FIG. 13 is a cross-sectional view taken along the line GG ′ of FIG. 5 in the case where the convex portion is provided.

  In the above description, it has been described that the third interlayer insulating film 43 is subjected to a CMP (Chemical Mechanical Polishing) process so that the surface thereof becomes almost completely flat. It is not limited. Below, the form which can hold | maintain an effect equivalent to or more than such a form is demonstrated.

  If it is a form as mentioned above, since it becomes possible to form the pixel electrode 9a and the alignment film 16 flatly, it will be possible to prevent disturbance of the alignment state of the liquid crystal layer 50. There is a possibility that such a problem may occur.

  That is, in the electro-optical device as in the present embodiment, in general, the voltage polarity applied to each pixel electrode 9a in order to prevent degradation of the electro-optical material by applying a DC voltage, and to prevent crosstalk and flicker in the display image. There is a case where an inversion driving method is employed in which is inverted according to a predetermined rule. More specifically, the so-called “1H inversion driving method” will be described as follows.

  First, as shown in FIG. 11A, during the period in which the image signal of the nth (where n is a natural number) field or frame is displayed, the liquid crystal drive voltage indicated by + or − is displayed for each pixel electrode 9a. The polarity is not inverted, and the pixel electrode 9a is driven with the same polarity for each row. Thereafter, as shown in FIG. 11B, when the image signal of the (n + 1) th field or one frame is displayed, the voltage polarity of the liquid crystal driving voltage in each pixel electrode 9a is inverted, and this n + 1th field or one frame is displayed. During the period of displaying the image signal, the polarity of the liquid crystal driving voltage indicated by + or − is not inverted for each pixel electrode 9a, and the pixel electrode 9a is driven with the same polarity for each row. Then, the states shown in FIGS. 11A and 11B are repeated with a period of one field or one frame. This is driving by the 1H inversion driving method. As a result, it is possible to display an image with reduced crosstalk and flicker while avoiding deterioration of the liquid crystal due to application of a DC voltage. The 1H inversion driving method is advantageous in that there is almost no vertical crosstalk compared to the 1S inversion driving method described later.

  However, as can be seen from FIGS. 11A and 11B, in the 1H inversion driving method, a horizontal electric field is generated between the pixel electrodes 9a adjacent to each other in the vertical direction (Y direction) in the drawing. In these figures, the lateral electric field generation region C1 is always near the gap between the pixel electrodes 9a adjacent to each other in the Y direction. When such a lateral electric field is applied, an electro-optical material that is assumed to be applied with a vertical electric field (that is, an electric field in a direction perpendicular to the substrate surface) between the opposing pixel electrode and the counter electrode. As a result, a malfunction of the electro-optical material such as alignment failure of the liquid crystal occurs, and there arises a problem that light leakage occurs in this portion and the contrast ratio is lowered.

  On the other hand, it is possible to cover the region where the horizontal electric field is generated with the light shielding film, but this causes a problem that the opening region of the pixel becomes narrow according to the size of the region where the horizontal electric field is generated. In particular, as the distance between pixel electrodes adjacent to each other decreases as the pixel pitch becomes finer, such a lateral electric field increases, so these problems become more serious as the definition of electro-optical devices increases. End up.

Therefore, in this embodiment, the third interlayer insulating film 43 is disposed between the pixel electrodes 9a adjacent to each other in the vertical direction in FIG. 11 (that is, between the pixel electrodes 9a adjacent to each other to which a reverse polarity potential is applied). Forms a convex portion 430 extending in a stripe shape in the lateral direction.
The presence of the convex portion 430 makes it possible to increase the vertical electric field in the vicinity of the edge of the pixel electrode 9a disposed on the convex portion 430 and weaken the horizontal electric field. More specifically, as shown in FIGS. 12 and 13, the distance between the vicinity of the edge of the pixel electrode 9 a disposed on the convex portion 430 and the counter electrode 21 is reduced by the height of the convex portion 430. Accordingly, the vertical electric field between the pixel electrode 9a and the counter electrode 21 can be strengthened in the horizontal electric field generating region C1 shown in FIG. In FIGS. 12 and 13, since the gap between adjacent pixel electrodes 9a is constant, the magnitude of the lateral electric field that increases as the gap narrows is also constant.

  Therefore, by making the vertical electric field more dominant in the horizontal electric field generating region C1 shown in FIG. 11, it is possible to prevent alignment defects of the liquid crystal due to the horizontal electric field. Furthermore, the presence of the convex portion 430 made of an insulating film reduces the strength of the horizontal electric field and reduces the liquid crystal portion that receives the horizontal electric field by the amount replaced by the convex portion 430 where the horizontal electric field exists. The effect on the liquid crystal layer 50 can be reduced.

In addition, such a convex part 430 is specifically formed as follows, for example.
Hereinafter, a specific mode for forming the convex portion 430 will be described with reference to FIGS. 14 and 15. Among these, FIG. 14 is a perspective view of data lines and elements formed in the same layer as the data lines in the electro-optical device according to the second embodiment. FIG. 15 is a perspective view of data lines and elements formed in the same layer as the data lines. In these drawings, only the configuration for forming the convex portion 430 is shown, and the other various elements are not shown.

  As for a specific mode for forming the convex portion 430, first, as shown in FIG. 14, the data line 6a and the shield layer relay formed in the electro-optical device in the second embodiment described above. A form using the layer 6a1 and the second relay layer 6a2 is conceivable. That is, as described with reference to FIG. 5, the data line 6 a includes a main line portion linearly extending in the Y direction in FIG. 5, and the shield layer relay layer 6 a 1 and the second relay layer 6 a 2 are , And formed so as to protrude from the data line 6a in the X direction in FIG. If such a data line 6a, shield layer relay layer 6a1, and second relay layer 6a2 are used, the surface of the fourth interlayer insulating film 44 as a base of the pixel electrode 9a is caused by the height of the data line 6a, shield layer relay layer 6a1, and second relay layer 6a2. The convex part 430 can be formed naturally (see FIG. 14). In this case, it can be considered that the above-described shield layer relay layer 6a1 and second relay layer 6a2 correspond to the “overhang portion” or “convex pattern” according to the present invention.

  Secondly, as shown in FIG. 15, a form using the shield layer 400 and the third relay layer 402 formed in the electro-optical device according to the second embodiment described above is conceivable. That is, as described with reference to FIG. 5, the shield layer 400 is formed in a lattice shape, and the third relay layer 402 is formed as the same layer as the shield layer 400. If the shield layer 400 and the third relay layer 402 are used, the protrusions 430 are naturally formed on the surface of the fourth interlayer insulating film 44 as a base of the pixel electrode 9a due to the height of the shield layer 400 and the third relay layer 402. It can be formed (see FIG. 15). In this case, the “overhanging portion” or “convex pattern” referred to in the present invention is a portion of the shield layer 400 that exists in the shield layer 400 shown in FIG. 5 so as to bridge the portion extending in the Y direction. It can be considered that the part extending in the X direction corresponds.

  In each of the above cases, it is preferable that the surface of the interlayer insulating film formed as the base of the data line 6a or the shield layer 400 is subjected to an appropriate planarization process. This is because the height of the convex portion 430 can be determined strictly in this way. Moreover, the aspect which forms a convex part using a shield layer or a data line like these can be applied similarly also in the above-mentioned 1st Embodiment.

  Thirdly, by devising the configuration of the lower layer of the pixel electrode 9a as described above, the third interlayer insulating film 43 (corresponding to the case of the first embodiment) as the base of the pixel electrode 9a, or the fourth. In addition to the form in which the convex portion 430 is provided on the surface of the interlayer insulating film 44, in some cases, the convex portion 430 is formed directly on the surface of the third interlayer insulating film 43 or the fourth interlayer insulating film 44. A form for forming the convex portion 430 may be adopted by forming a new film for the purpose and patterning the film.

  Now, although the convex part 430 can be formed as described above, it is preferable that the level difference created by the convex part 430 is made gentler. In order to form this “gradual” convex portion, for example, after forming a steep convex portion, a planarizing film is formed on and around the convex portion, and then the planarizing film is removed. This can be realized by performing an etch-back process for retreating the surface of the convex portion exposed after the removal of the planarizing film.

  By providing such a “gradual” convex portion, the alignment film 16 can be rubbed relatively easily and satisfactorily and uniformly, and an electro-optical material malfunction such as a liquid crystal alignment defect is extremely effective. Can be prevented. In this regard, if the angle of the surface of the convex portion changes steeply, a discontinuous surface is generated in the electro-optical material such as liquid crystal, resulting in malfunction of the electro-optical material such as poor alignment of the liquid crystal. Is very different.

  Furthermore, although the 1H inversion driving has been described above, the present invention is not limited to such a driving method. For example, the 1S inversion driving method in which the pixel electrodes in the same column are driven with the same polarity potential and the voltage polarity is inverted for each column in a frame or field cycle is relatively easy to control and can display a high-quality image. Although the present invention is used as an inversion driving method that enables it, the present invention is applicable to this. Furthermore, a dot inversion driving method has also been developed in which the polarity of the voltage applied to each pixel electrode is inverted between pixel electrodes adjacent to each other in both the column direction and the row direction. It goes without saying that it can be applied.

  In addition, as described above, in the form in which the convex portion 430 is provided, the possibility that a liquid crystal alignment defect occurs due to this is increased. Therefore, in some cases, the line width of the above-described upper light shielding film, built-in light shielding film, lower light shielding film 11a, or the like may be slightly increased. In this way, it is possible to prevent the light leakage or the like caused by the alignment failure caused by the convex portion 430 from affecting the image. However, since this measure is a counter measure from the viewpoint of improving the aperture ratio, it is preferable to implement this measure after achieving an appropriate harmony with it.

(Fifth embodiment: double speed field inversion drive)
Hereinafter, the fifth embodiment will be described with reference to FIGS. 16 and 17.
FIG. 16 is a timing chart relating to a scanning signal showing a conventional voltage application method for the pixel electrode 9a, and FIG. 17 is a timing chart according to the fifth embodiment. The pixel portion described with reference to FIGS. 1 to 4 and the like is “driven” based on such a timing chart.

  The fifth embodiment is characterized by a driving method of the pixel electrode 9a. In particular, when the surface of the interlayer insulating film under the pixel electrode 9a is flattened as in the present embodiment, a specific effect is exhibited. To do.

  First, a voltage application method for the pixel electrode 9a in the fifth embodiment will be briefly described with reference to a timing chart shown in FIG. As shown in this figure, the scanning lines 3a are sequentially applied with scanning signals G1, G2,..., Gm from the first line to the last line ( (See FIG. 1). Here, “selection” means that the TFT 30 connected to the scanning line 3a can be energized. Then, during the period in which the scanning line 3a of each row is selected (one horizontal scanning period (1H)), the image signals S1, S2,..., Sn are sent to the TFT 30 and eventually the pixel electrode 9a through the data line 6a. (This is not shown in FIG. 16). Accordingly, each pixel electrode 9a has a predetermined potential, and a predetermined potential difference is generated between the pixel electrode 9a and the potential of the counter electrode 21. That is, the liquid crystal layer 50 is charged with a predetermined charge.

  Incidentally, the period during which all the selections of the scanning lines 3a from the first line to the last line are performed is called one field period or one vertical scanning period (1F). In this driving method, driving with the polarity reversed is performed between the n-th field and the (n + 1) -th field (hereinafter, referred to as “1V inversion driving”. See G1).

  In such 1V inversion driving, unlike the 1H inversion driving described above, since the adjacent pixel electrodes 9a are not driven by electric fields having different polarities, a horizontal electric field is generated in principle. do not do. Therefore, as in the present embodiment, even when the surface of the interlayer insulating film located under the pixel electrode 9a is subjected to planarization treatment, the generation of a lateral electric field is generated in the same manner as in the case where the above-described protrusions are provided. There is no need to pay special attention to the cause of failure.

  However, when the 1V inversion driving as described above is employed, the following problems occur. That is, every time the polarity is reversed, that is, every vertical scanning period, there is a problem that flicker is generated on the image.

  Therefore, in such a case, it is preferable to perform double speed field inversion driving as shown in FIG. Here, the double-speed field inversion driving means that one field period is half of that in the past (for example, if the former is driven at 120 [Hz], “half” is preferably 1/60 [ s] or less.). Therefore, assuming 1V inversion driving, the polarity inversion period is halved compared to the prior art. Comparing FIG. 17 and FIG. 16, it can be seen that the former is shorter in one horizontal scanning period (1H) than the latter, and therefore one vertical scanning period (1F) is shorter. Specifically, it is “1/2” as shown in the figure.

  In this way, one vertical scanning period is shortened, that is, a screen with a positive polarity and a screen with a negative polarity are switched more quickly, and the aforementioned flicker becomes inconspicuous.

  As described above, according to the double-speed field inversion driving method, it is possible to display a higher quality image without flicker.

  Further, according to such a double-speed field inversion driving method, the potential holding characteristics of each pixel electrode 9a can be relatively improved as compared with driving methods that do not. This is because the fact that the length of one field period is halved means that the time during which each pixel electrode 9a must hold a certain predetermined potential is improved in the former half. . In this regard, in the present embodiment, since a high-performance storage capacitor 70 is provided for each pixel, it is possible to prevent a situation in which the voltage has already attenuated during the field period. However, for the purpose of displaying a higher quality image, there is no doubt that the effect of improving the relative potential holding characteristics as described above is beneficial. This fifth embodiment is effective for the embodiments described above and later.

(Sixth Embodiment: Modified form of contact hole for electrical connection with pixel electrode)
In the following, as a sixth embodiment of the present invention, FIG. 18 shows matters related to a modification of a contact hole for electrical connection with the pixel electrode 9a in the electro-optical device according to the first embodiment described above. The description will be given with reference. FIG. 18 is a diagram having the same concept as FIG. 4, and a film made of titanium (hereinafter referred to as “Ti film”) is formed on the inner surface of the contact hole for electrical connection with the pixel electrode 9 a. It is sectional drawing which shows what becomes an aspect from which the point which has differed characteristically. Note that the electro-optical device according to the sixth embodiment has substantially the same configuration as that of the pixel portion of the electro-optical device according to the first embodiment. Therefore, in the following description, only the characteristic part of the sixth embodiment will be described, and the description of the remaining part will be omitted or simplified as appropriate.

  In the sixth embodiment, as shown in FIG. 18, the third relay layer 402 is not formed as compared with FIG. 4, and the electrical connection between the pixel electrode 9a and the first relay layer 71 is achieved. There is a great difference in that a Ti film 891a is formed on the inner surface of the contact hole 891.

  More specifically, unlike the first embodiment, the fourth relay layer 402 is not formed in the fourth layer, so that the electrical connection between the first relay layer 71 and the pixel electrode 9a is the second interlayer insulation. The contact hole 891 formed through the film 42 and the third interlayer insulating film 43 is realized. A Ti film 891a is formed on the inner surface of the contact hole 891. The Ti film 891 only needs to contain at least titanium, and may contain the compound. For example, titanium nitride or silicon nitride may be used. The ITO constituting the pixel electrode 9a is formed inside the contact hole 891 so as to cover the surface of the Ti film 891a.

  In the electro-optical device of the sixth embodiment having such a configuration, the third relay layer 402 made of an aluminum film and a titanium nitride film is provided in the first embodiment, so that there is a risk of so-called galvanic corrosion. Similarly to the avoidance, the pixel electrode 9a made of ITO directly comes into contact with the Ti film 891a, so that the risk of electrolytic corrosion can be avoided. Therefore, also in the sixth embodiment, it is possible to satisfactorily maintain the voltage application to the pixel electrode 9a or the potential holding characteristic in the pixel electrode 9a.

Further, according to the above-described Ti film 891a, it is possible to prevent light leakage due to the contact hole 891 because the titanium has a relatively excellent light shielding performance. In other words, the Ti film 891a absorbs light or the like, so that it is possible to block the progress of light penetrating through the contact hole drive portion. Thereby, there is almost no possibility of causing light leakage or the like on the image.
For the same reason, the light resistance of the TFT 30 or its semiconductor layer 1a can be improved. As a result, it is possible to suppress the occurrence of light leakage current when light is incident on the semiconductor layer 1a, and to prevent the occurrence of flicker or the like on the image due to this. As described above, the electro-optical device according to the sixth embodiment can display a higher quality image.

  The configuration of the electro-optical device shown in FIG. 18 according to the sixth embodiment is related to the TFT array substrate 10 in relation to FIG. 4 described as the first embodiment and FIG. 6 described as the second embodiment. It can be said that the specific embodiments of the above laminated structure are enriched.

  That is, FIG. 18 according to the sixth embodiment can be said to have a simpler structure than that of FIGS. 4 and 6 due to the omission of the second relay layer 402 and the reduction in the number of contact holes associated therewith. In order to improve the aperture ratio, it is more advantageous to arrange various elements constituting the laminated structure so as to be confined in the light shielding region. However, in FIG. 4, as described above, there is an advantage that the cost can be reduced by shortening the contact holes 83, 85 and 89, and in FIG. 6, the capacitor electrode 300 is configured as a part of the capacitor line. The advantage that the cost can be reduced is obtained by being possible. That is, in various aspects of the electro-optical device disclosed in the present embodiment, the aperture ratio can be improved, and other accompanying functions and effects can be exhibited individually. It cannot be decided whether it is. As described above, the sixth embodiment, in combination with the above-described first embodiment and the like, provides one of the optimum modes that can be considered when the present invention is embodied, and at the same time, the present invention. This is to enrich specific embodiments of such a laminated structure.

(Overall configuration of electro-optical device)
The overall configuration of the electro-optical device according to each embodiment configured as described above will be described with reference to FIGS. 19 and 20. FIG. 19 is a plan view of the TFT array substrate as viewed from the counter substrate 20 side together with the components formed thereon, and FIG. 20 is a cross-sectional view taken along line HH ′ of FIG.

  19 and 20, in the electro-optical device according to the present embodiment, the TFT array substrate 10 and the counter substrate 20 are disposed to face each other. Liquid crystal 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided with a sealing material provided in a seal region located around the image display region 10a. 52 are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like, and is cured by ultraviolet rays, heating, or the like in order to bond the two substrates together. Further, in this sealing material 52, if the liquid crystal device according to the present embodiment is a small-sized liquid crystal device that performs enlarged display like a projector, the distance between the two substrates (inter-substrate gap) is set to a predetermined value. Gap materials (spacers) such as glass fibers or glass beads are dispersed. Alternatively, such a gap material may be included in the liquid crystal layer 50 as long as the liquid crystal device is a large-sized liquid crystal device that performs the same size display as a liquid crystal display or a liquid crystal television.

  In a region outside the sealing material 52, a data line driving circuit 101 and an external circuit connection terminal 102 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing are provided on one side of the TFT array substrate 10. A scanning line driving circuit 104 for driving the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to the one side. Yes.

  Needless to say, if the delay of the scanning signal supplied to the scanning line 3a is not a problem, the scanning line driving circuit 104 may be provided on only one side. The data line driving circuit 101 may be arranged on both sides along the side of the image display area 10a.

On the remaining side of the TFT array substrate 10, a plurality of wirings 105 are provided for connecting the scanning line driving circuits 104 provided on both sides of the image display region 10a.
Further, at least one corner portion of the counter substrate 20 is provided with a conductive material 106 for electrical connection between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 20, on the TFT array substrate 10, an alignment film is formed on the pixel electrode 9a after the pixel switching TFT, the scanning line, the data line and the like are formed. On the other hand, in addition to the counter electrode 21, an alignment film is formed on the uppermost layer portion on the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one kind or several kinds of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  On the TFT array substrate 10, in addition to the data line driving circuit 101, the scanning line driving circuit 104, etc., a sampling circuit for applying an image signal to the plurality of data lines 6a at a predetermined timing, and a plurality of data lines A precharge circuit for supplying a precharge signal of a predetermined voltage level in advance to the image signal to 6a, an inspection circuit for inspecting quality, defects, etc. of the electro-optical device during manufacture or at the time of shipment are formed. Also good.

  (Electronic Device) Next, an overall configuration, particularly an optical configuration, of an embodiment of a projection color display device as an example of an electronic device using the electro-optical device described in detail as a light valve will be described. FIG. 21 is a schematic cross-sectional view of the projection type color display device.

  In FIG. 21, a liquid crystal projector 1100 as an example of a projection type color display device according to the present embodiment prepares three liquid crystal modules including a liquid crystal device in which a drive circuit is mounted on a TFT array substrate, each of which is a light valve for RGB. It is configured as a projector used as 100R, 100G, and 100B. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, the light components R, G, and R corresponding to the three primary colors of RGB are obtained by three mirrors 1106 and two dichroic mirrors 1108. The light is divided into B and led to the light valves 100R, 100G and 100B corresponding to the respective colors. In particular, the B light is guided through a relay lens system 1121 including an incident lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. The light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are synthesized again by the dichroic prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, electronic devices are also included in the technical scope of the present invention. The electro-optical device can be applied to an electrophoretic device, an EL (electroluminescence) device, a device using an electron-emitting device (Field Emission Display, Surface-Conduction Electron-Emitter Display, or the like).

  DESCRIPTION OF SYMBOLS 1a ... Semiconductor layer 3a ... Scan line 6a ... Data line 6a1 ... Relay layer 6a2 for shield layer ... Second relay layer 9a ... Pixel electrode 10 ... TFT array substrate 11a ... Lower side light shielding film 16 ... Orientation film 20 ... Counter substrate 30 ... TFT 43 ... third interlayer insulating film 430 ... convex part 50 ... liquid crystal layer 70 ... storage capacitor 71 ... first relay layer 71DFBA ... convex part 75 ... dielectric film 75a ... silicon oxide film 75b ... silicon nitride films 81, 82, 83 85, 87, 89, 891 ... contact hole 891a ... Ti film 300 ... capacitive electrode 400, 404 ... shield layer 402 ... second relay layer.

Claims (6)

A data line, a thin film transistor electrically connected to the data line, a pixel electrode provided corresponding to the thin film transistor, and a storage capacitor electrically connected to the pixel electrode are provided on the substrate. An electro-optical device,
A first light-shielding film provided between the substrate and the thin film transistor;
A second light-shielding film provided between the thin film transistor and the pixel electrode,
Wherein the first light shielding film and the second light shielding film, and projecting portions cut away at one side of the corner portion of the pixel opening region is formed,
A pair of electrodes constituting the storage capacitor is formed between the first light shielding film and the second light shielding film,
The pair of electrodes includes:
A first side along the one side;
An electro-optical device, comprising: a second side extending from the first side in a direction of a data line adjacent to the data line along a direction intersecting the data line .   The electro-optical device according to claim 1, wherein the storage capacitor is arranged between the data line and a data line adjacent to the data line.   The second light-shielding film is formed of the same film, and includes a light-shielding relay layer for electrically connecting the thin film transistor and the pixel electrode. The pixel opening is formed by the second light-shielding film and the relay layer. The electro-optical device according to claim 1, wherein the region is defined.   4. The electro-optical device according to claim 1, wherein the second light shielding film is connected to one electrode forming the storage capacitor. 5. An interlayer insulating film disposed as a base of the pixel electrode;
Contact holes for electrical connection with the pixel electrodes are formed in the interlayer insulating film,
5. The electro-optical device according to claim 1, wherein a film containing titanium or a compound thereof is formed on at least an inner surface of the contact hole.   An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 5.

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