JP2002287149A - Liquid crystal device, electronic equipment, and projection type liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal device which has a display screen with a high contrast ratio by shading a light-absent part due to misalignment of liquid crystal which originates from an alignment film peeled and re-stuck in rubbing processing and further an unnecessary scatter area formed owing to inadequacy of a refractive index accompanying polymer stabilization processing. SOLUTION: A shading film 24 provided around a pixel is projected to the terminal part of the pixel, specially, the corner part of the pixel to shade the light-absent part and further the unnecessary scatter area. The projection part 24a is formed circularly, polygonally, etc., so as to secure the aperture rate of the pixel.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device, and more particularly to a technique for increasing a contrast ratio in a liquid crystal device suitable for use as a light valve of a projection type liquid crystal projector.

[0002]

2. Description of the Related Art In recent years, large-capacity liquid crystal devices have been used for displays of personal computers and the like. Among them, an active matrix type liquid crystal display device in which a liquid crystal driving element having a switching function is introduced between a pixel electrode and a signal wiring is mainly used as a high quality and large capacity liquid crystal display device. A typical example of a liquid crystal driving element of an active matrix type liquid crystal display device is a thin film diode (hereinafter abbreviated as TFD).
And a thin film transistor (hereinafter abbreviated as TFT), and the function of these liquid crystal driving elements is used to drive a large number of pixels arranged in a matrix to display an arbitrary character or figure. It has become possible.

The above-mentioned active matrix type liquid crystal device is also used for a liquid crystal panel which is a constituent element of a projection type liquid crystal display device such as a liquid crystal display device or a liquid crystal projector used for various electronic devices. FIG. 1 is a perspective view of an example of this type of active matrix liquid crystal device as viewed from above. Active matrix type liquid crystal device 50
Is formed by bonding two substrates, that is, an element substrate 10 on which circuit wiring and a liquid crystal driving element are formed, and an opposing substrate 20 opposed to the element substrate 10 with a narrow gap therebetween via a sealing material. The liquid crystal is sandwiched between the gaps. The display area 90 of the liquid crystal device has scanning lines 3 and data lines 6.
A number of pixels 9a surrounded by are formed. In addition, connection terminals 15 and 16 for connecting to an external electric circuit are formed around the liquid crystal device. In FIG. 1, the liquid crystal driving element is omitted.

FIG. 13 is a plan view of the active matrix type liquid crystal device 50, showing the periphery of a plurality of pixels 9a as seen through from above. TFT as liquid crystal drive element
Is used. A plurality of transparent pixel electrodes 9 are provided in a matrix on the element substrate 10 of the liquid crystal device 50, and data lines 6, scanning lines 3, and capacitance lines 4 are provided along vertical and horizontal boundaries of the pixel electrodes 9. ing. TFT
Reference numeral 30 is provided between the pixels 9a so as to overlap the data line 6. The storage capacitor is provided between the pixels 9 a so as to overlap the capacitor line 4, and a part of the storage capacitor is branched at the intersection of the capacitor line 4 and the data line 6 and provided to overlap the data line 6. . The pixel electrode 9 writes the image signal supplied from the data line 6 at a predetermined timing by closing the switch of the pixel switching TFT 30 as a switching element for a predetermined period.

Further, a light-shielding film 24 is provided on the opposite substrate 20 of the liquid crystal device 50 in a peripheral region other than the display region of each pixel 9a.
Is provided. The light-shielding film 24 is provided so as to overlap with the scanning lines 3, the capacitance lines 4, and the data lines 6. Thereby, the light shielding film 24 prevents the incident light from the side of the counter substrate 20 from entering the semiconductor layer 1a of the TFT 30 for driving the liquid crystal.

FIG. 15 is a cross-sectional view of the liquid crystal device 50 shown in FIG. 13 along the line CC '. The liquid crystal device 50 has a liquid crystal layer 40 sealed between two transparent element substrates 10 and a counter substrate 20. The data line 6 for supplying an image signal formed on the substrate 11 of the element substrate 10 is connected to the source region 1 d of the TFT 30 through the contact hole 5.
Is electrically connected to In addition, a scanning signal is sequentially applied to the scanning line 3 intersecting the channel region 1a 'of the TFT 30 at a predetermined timing in a pulsed manner.

An image signal of a predetermined level written to the liquid crystal via the pixel electrode 9 is held for a certain period between the counter electrode 22 formed on the counter substrate 20. Usually, the held image signal is In order to prevent leakage, the pixel electrode 9
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the capacitor and the counter electrode 22. Here, as a method of forming the storage capacitor 70, the capacitor line 4 which is a wiring for forming a capacitor is used.
And a capacitor electrode 4 a are provided via the insulating film 2.
An alignment film 13 on which a predetermined alignment process such as a rubbing process is performed is provided so as to cover these elements, wirings and pixel electrodes. Usually, the alignment film 13 is formed from an organic film such as polyimide.

A light-shielding film 24, a counter electrode 22, and an alignment film 23 are formed on a counter substrate 20, which is the other substrate facing the element substrate 10. FIG. 14 shows the counter substrate 20.
5 is a plan view showing the arrangement of the light shielding film 24 provided on the counter substrate 20. As shown in the figure, the light-shielding film 24 has a pixel 9a slightly inside the pixel electrode 9.
It is formed in a lattice shape so as to define an area. The light-shielding film 24 is usually made of a light-shielding metal film such as chrome. Further, a counter electrode 22 is formed on the entire surface of the substrate so as to cover the light-shielding film 24, and an alignment film 23 on which a predetermined alignment process such as a rubbing process is performed is formed on the surface of the counter electrode 22. The alignment film 23 performs a rubbing process in a direction perpendicular to the alignment film 13 on the element substrate 10 side to control the alignment direction of the liquid crystal.

Normally, in the case of a TN (Twisted nematic) type liquid crystal device, the orientation film 13 on the element substrate 10 side, for example, a direction of 45 degrees with respect to each square pixel 9a (right in FIG. 14). Rubbing is performed in the direction from the bottom to the upper left arrow F1), while the orientation film 23 on the counter substrate 20 side is further twisted by 90 degrees in the 135 ° direction (the direction from the lower left to the upper right arrow F2 in FIG. 14). Rubbing to. Alternatively, the rubbing direction is such that the liquid crystal is kept in a twisted state by rubbing the pixels in the square in the vertical and horizontal directions.

[0010]

However, during the rubbing process, the portion of the alignment film where the adhesion is weak is peeled off, and the rubbing is carried to a higher portion of the pixel corner where the driving circuit wiring and the driving element are arranged. As a result, the peeled alignment film may be reattached to the corner of the pixel. In the portion where the peeled alignment film is re-attached, the surface characteristics are different from those of the other portions. When the liquid crystal is brought into contact, the arrangement configuration of the liquid crystal molecules is disturbed and an abnormal alignment portion is formed. The portion where the abnormal orientation occurs causes a so-called "light leakage", for example, a white display at the time of a normally black display, and a contrast ratio is lowered to cause a display defect. This is because, as shown in FIG. 15, an abnormal alignment region 49 in which the alignment of the liquid crystal is disturbed occurs at a position where the alignment film is reattached at the corner of the pixel, which leads to display failure. In addition, in order to improve light resistance reliability, when a polymer stabilizing treatment is performed by adding an alignment dispersing monomer to the liquid crystal,
As shown in FIG. 6, an unnecessary scattering region 48 due to a refractive index mismatch at the boundary between the normal orientation region and the abnormal orientation region 49 may be added to the periphery of the light leakage. Therefore, a decrease in the contrast ratio tends to appear more remarkably.

An object of the present invention is to solve the above problems and to provide a liquid crystal device capable of obtaining a display image having a high contrast ratio. The present invention is effective for any liquid crystal display device, but is particularly effective for a liquid crystal device requiring a high contrast ratio, such as a projection type liquid crystal device.

[0012]

In order to achieve the above object, a liquid crystal device according to the present invention has at least a pixel driving electrode on the inner surface of each of a pair of substrates arranged to face each other with a gap therebetween. An alignment film is provided on the surface of the pixel driving electrode, and a plurality of pixels having a liquid crystal layer sandwiched between the alignment films are provided. The film was a liquid crystal device having an overhang at each pixel end in the rubbing direction of at least one of the pair of alignment films of each pixel. By configuring the liquid crystal device in this manner, even when the alignment film is peeled off during the rubbing process and reattached to the edge of the pixel to cause an abnormal alignment of the liquid crystal to cause light leakage, the display light is blocked, so that a display defect occurs. A display image with a high contrast ratio can be obtained without being recognized. The present liquid crystal device is particularly effective in a liquid crystal device requiring a high contrast ratio, such as a projection type liquid crystal device.

In the liquid crystal device according to the present invention, the overhanging portion may be a circle or a polygon such as a triangle or a quadrangle. The overhanging portion may be provided at at least one corner of each pixel, or may be formed at two corners of adjacent pixels. It is sufficient that the overhang is on an extension of the rubbing direction of the alignment film. When the rubbing direction is parallel to the pixel, the overhang may be formed linearly at the end of each pixel. Since light leakage is caused by re-adhesion of the alignment film peeled off during the rubbing process, the vicinity of the corner or end of the pixel, which is one step higher than the pixel electrode surface such as a liquid crystal driving element or circuit wiring, particularly the pixel Often occurs in the corners of the. Therefore,
If the display light of these portions is blocked, it is not recognized as a display defect. In the liquid crystal device of the present invention, the light shielding film may be provided on either the element substrate side or the counter substrate side. In particular, since there is no liquid crystal driving element or circuit wiring on the counter substrate side, and the light-shielding film is easily formed in an arbitrary shape, it can be provided easily.

In the liquid crystal device of the present invention, the liquid crystal device can be applied to either a passive matrix driving system or an active matrix driving system. Further, the present invention can be applied to a device in which the active matrix driving method is a thin film transistor method. In an active matrix driving type liquid crystal device, liquid crystal driving elements and circuit wiring are formed in a complicated manner on a substrate, and the alignment film surface is not flat, and there are places where the alignment film peeled off during the rubbing treatment is likely to be re-attached. Due to the large number, light leakage easily occurs, and the present invention exhibits a remarkable effect.

The liquid crystal device according to the present invention can be applied particularly to a device in which the liquid crystal device is in a vertical alignment mode. The vertical alignment polyimide film, which is frequently used as an alignment film in the vertical alignment mode, has weak adhesion to a metal wiring portion and is easily peeled off. Therefore, when the present invention is adopted, a remarkable effect is exhibited. Further, the liquid crystal device of the present invention can also be applied to a device in which the liquid crystal has been subjected to a stabilization treatment with an alignment-dispersing polymer. In a liquid crystal device that has been stabilized with an alignment-dispersing polymer to improve light resistance, unnecessary scattered light due to refractive index mismatch may be added at the boundary between the normal alignment portion and the abnormal alignment portion, so that the contrast ratio may be reduced. Although the decrease tends to be remarkable, a display screen having a high contrast ratio can be obtained by using the present invention.

An electronic apparatus according to the present invention includes any one of the above-described liquid crystal devices having a light-shielding film having an overhang. Further, a projection type liquid crystal device according to the present invention includes any one of the above liquid crystal devices provided with a light-shielding film having an overhang portion. The projection type liquid crystal device or electronic apparatus of the present invention does not have a defective display due to light leakage and can provide a display image with a high contrast ratio.

[0017]

Next, an embodiment of the present invention will be described with reference to the drawings. In the description of the drawings of the embodiment, the scale of each layer and each member is not the same but is appropriately changed in order to make each layer and each member have a size recognizable in the drawings. (First Embodiment) The structure of a liquid crystal device according to a first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view of an example of an active matrix liquid crystal device as viewed from above. The appearance is the same as the conventional example. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other of the liquid crystal device seen through from above, and FIG. 3 is a diagram illustrating an arrangement of a light shielding film formed on a counter substrate. FIG. 4 is a cross-sectional view taken along line AA ′ in FIGS. As shown in FIG. 1, the active matrix type liquid crystal device 50 has:
Element substrate 10 on which circuit wiring and liquid crystal driving elements are formed
And the two substrates of the opposing substrate 20 disposed opposite to the element substrate 10 are joined with a narrow gap therebetween via a sealing material, and the liquid crystal is sandwiched between the gaps. .
In the display area 90 of the liquid crystal device 50, a large number of pixels 9a surrounded by the scanning lines 3 and the data 6 are formed. In addition, connection terminals 15 and 16 for connection to an external electric circuit are formed around the liquid crystal device 50. In FIG. 1, the liquid crystal driving element is omitted.

As shown in FIG. 2, when the liquid crystal device 50 of the present embodiment is seen through from above, a plurality of pixels 9a are formed in a matrix in the image display area. A pixel driving TF for controlling the pixel electrode 9 is provided between the pixels 9a.
A plurality of T30s are formed in a matrix, and the data lines 6 for supplying image signals are electrically connected to the source regions of the TFTs 30. The image signals to be written to the data lines 6 may be supplied sequentially for each line, or may be supplied to a plurality of adjacent data lines 6 for each group. The channel region 1 of the TFT 30
The scanning signal is sequentially applied to the scanning line 3 intersecting a ′ in a pulsed manner at a predetermined timing. The pixel electrode 9 is electrically connected to the drain region of the pixel driving TFT 30, and by closing the pixel driving TFT 30 for a certain period of time, an image signal supplied from the data line 6 is transmitted to a predetermined position. It is configured to write at the timing.

An image signal of a predetermined level written in the liquid crystal via the pixel electrode 9 is held for a certain period between the image signal and a counter electrode formed on a counter substrate described later. Here, in order to prevent the held image signal from leaking, the pixel electrode 9 is used.
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the capacitor and the counter electrode. For example, the voltage of the pixel electrode 9 is held by the storage capacitor 70 for a time longer than the time during which the source voltage is applied. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized. In the present embodiment, as a method of forming the storage capacitor 70, the capacitor line 4 that is a wiring for forming a capacitor between the storage layer 70 and the semiconductor layer 1a is provided. Further, instead of providing the capacitor line 4, a capacitor may be formed between the pixel electrode 9 and the preceding scanning line 3.

As shown in FIG. 2, a plurality of transparent pixel electrodes 9 are provided in a matrix on the element substrate of the liquid crystal device 50, and the data lines 6 extend along the vertical and horizontal boundaries of the pixel electrodes 9 respectively. , A scanning line 3 and a capacitance line 4.
The data line 6 is electrically connected to the source region of the semiconductor layer 1a made of a polysilicon film described later via the contact hole 5, and the pixel electrode 9 is connected to the semiconductor layer 1a described later via the contact hole 8. Of these, it is electrically connected to the drain region. In addition, the scanning lines 3 are arranged so as to face a channel region 1a '(a hatched region falling rightward in the figure) of the semiconductor layer 1a, which will be described later.

Further, a light-shielding film 24 is provided on the counter substrate at a position overlapping the data line 6, the scanning line 3 and the capacitor line 4 between the pixels 9a. The light-shielding film 24 is provided so as to define the region of each pixel 9a, and has an overhang portion 24a at the end position (upper left corner on the paper) of the element substrate side alignment film in the rubbing direction (F1) described later. ing. The overhanging portion 24a of the light-shielding film 24 has a function of shielding a light leak portion caused by abnormal alignment of the liquid crystal, which is caused as a result of reattachment of the alignment film peeled off during the rubbing treatment of the alignment film. Shielding film 2 seen through opposing substrate 20
FIG. 3 shows the plane arrangement of No. 4. As shown in FIG. 3, the light shielding film 24 defining each pixel 9a region is formed in a lattice shape, and an overhang portion 24a is formed at the upper left corner of the paper. In FIG. 3, an arrow F1 indicates the rubbing direction of the alignment film on the element substrate side.

Referring to the sectional structure, as shown in FIG. 4, the transparent substrate 11 on the element substrate 10 side is made of, for example, a quartz substrate, and the transparent substrate 21 on the opposite substrate 20 side is made of, for example, a glass substrate or a quartz substrate. It consists of a substrate. Element substrate 10
Is provided with a pixel electrode 9 made of, for example, a transparent conductive film such as an ITO film. A pixel driving TFT 3 for controlling switching of each pixel electrode 9 is provided at a position adjacent to each pixel electrode 9.
0 is provided. The pixel driving TFT 30 is an LD
It has a D (Lightly Doped Drain) structure, and insulates the scanning line 3, the channel region 1a 'of the semiconductor layer 1a where a channel is formed by the electric field from the scanning line 3, and the scanning line 3 and the semiconductor layer 1a. The semiconductor device includes an insulating film 2, a data line 6, a low-concentration source region 1b and a low-concentration drain region 1c of the semiconductor layer 1a, and a high-concentration source region 1d and a high-concentration drain region 1e of the semiconductor layer 1a.

On the element substrate 10 including the scanning lines 3 and the insulating film 2, a first interlayer insulating film 18 in which a contact hole 5 leading to the high-concentration source region 1d is formed. That is, the data line 6 is connected to the first interlayer insulating film 18.
Is electrically connected to the high-concentration source region 1d through a contact hole 5 penetrating through. Further, the data line 6
The second interlayer insulating film 1 is formed on the first and second interlayer insulating films 18.
7 are formed.

The pixel driving TFT 30 preferably has the LDD structure as described above, but has a low concentration source region 1b.
And an offset structure in which impurity ions are not implanted into the low-concentration drain region 1c may be adopted, or impurity ions are implanted at a high concentration using the gate electrode as a mask.
A self-aligned TFT that forms high-concentration source and drain regions in a self-aligned manner may be used. Further, in the present embodiment, a single gate structure in which only one gate electrode made of a part of the scanning line 3 of the pixel driving TFT 30 is arranged between the source / drain regions is used. A gate electrode may be provided. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a dual gate (double gate) or triple gate or more as described above, a leak current at a junction between a channel and a source / drain region can be prevented, and a current in an off state can be reduced. When at least one of these gate electrodes has an LDD structure or an offset structure, the off-state current can be further reduced and a stable switching element can be obtained.

The storage capacitor 70 is formed by arranging the capacitor line 4 and the capacitor electrode 4a to face each other with the insulating film 2 interposed therebetween. More specifically, the high-concentration drain region 1e of the semiconductor layer 1a extends to the portion of the capacitance line 4 extending along the data line 6 and the scanning line 3 to form a capacitance electrode 4a. In particular, the insulating film 2 as a dielectric of the storage capacitor 70
In the case of the gate insulating film of the pixel driving TFT 30 formed on the polysilicon film by high-temperature oxidation, it can be a thin and high withstand voltage insulating film, and the storage capacitor 70 has a relatively small area and a large capacity. It can be a storage capacity.

In the case of the present embodiment, the element substrate 1
The alignment film 13 is provided on the second interlayer insulating film 17 and the pixel electrode 9 corresponding to the formation regions of the pixel driving TFT 30, the data line 6, and the scanning line 3. This alignment film 1
Reference numeral 3 is formed from an organic film such as polyimide.

On the other hand, a light-shielding film 24 is provided on the opposing substrate 20 in a region facing the data line 6, the scanning line 3, and the pixel driving TFT 30 on the element substrate 10, that is, in a non-display region of each pixel. Have been. Further, an opposing electrode 22 is provided on the entire surface of the opposing substrate 20 including the light-shielding film 24, and an alignment film 23 on which a predetermined alignment process such as a rubbing process is performed is formed on the surface of the opposing electrode 22. ing. The counter electrode 22 is also formed of a transparent conductive film such as an ITO film, like the pixel electrode 9 of the element substrate 10. Due to the presence of the light-shielding film 24, incident light from the opposite substrate 20 does not enter the channel region 1 a ′, the low-concentration source region 1 b, and the low-concentration drain region 1 c of the semiconductor layer 1 a of the pixel driving TFT 30. . Further, the light shielding film 24
It has a function of improving a contrast ratio, preventing color mixing of color materials, and the like, that is, a function as a so-called black matrix.
Further, the overhang portion 24a of the light-shielding film 24 covers up to the abnormal alignment region 49 of the liquid crystal resulting from the re-adhesion of the alignment film peeled off during the rubbing treatment of the alignment film,
It has a function of blocking a light leaking portion caused by abnormal alignment of the liquid crystal.

The element substrate 10 and the counter substrate 20 are arranged such that the pixel electrode 9 and the counter electrode 22 face each other.
Liquid crystal is sealed in a space surrounded by the substrates 10 and 20 and a sealing material, and a liquid crystal layer 40 is formed. Liquid crystal layer 40
Is a state in which no electric field from the pixel electrode 9 is applied,
A predetermined alignment state is obtained by the action of the alignment films 13 and 23.
The liquid crystal layer 40 may be subjected to a polymer stabilization treatment in which an alignment-dispersing monomer is added as a precursor into the liquid crystal and injected, and polymerized by ultraviolet rays or the like, in order to improve light resistance reliability.

In the liquid crystal device of this embodiment, the element substrate 10
The alignment film 13 on the side and the alignment film 23 on the counter substrate 20 are rubbed in directions orthogonal to each other. That is, as shown in FIG. 3, the alignment film 13 on the element substrate 10 side
The alignment film 23 on the counter substrate 20 side is rubbed in the direction of arrow F2 from the lower left of the paper to the upper right direction. Therefore, on the element substrate 10 side, an abnormal alignment region is likely to occur at the upper left corner of each pixel 9a on the paper surface, and the counter substrate 20
On the side, an abnormal alignment region is likely to occur in the upper right corner of each pixel 9a on the paper. In addition, since the level difference of the wiring portion is larger on the element substrate 10 side and an abnormal alignment region is easily generated, in this embodiment, the overhanging portion 24a of the light shielding film is provided only in the upper left corner of the drawing.

The size of the protruding portion 24a of the light-shielding film 24 is not particularly limited, and may be any size as long as it can shield the abnormal orientation region. More preferably, a size that can block unnecessary scattered light when the polymer stabilization treatment is performed is more preferable. Usually, the size of the light-exiting portion caused by the abnormal alignment of the liquid crystal is often 2 μm or less in diameter. The size of the protruding portion 24a of the light-shielding film 24 is slightly larger than the size of the light passing portion caused by the abnormal alignment of the liquid crystal, and is preferably about 1.2 to 2 times the size of the light passing portion in area ratio. Good. Further, in the case where unnecessary scattered light is shielded, it is preferable that the size is slightly larger, and is 1.5 to 3 times the size of the light leakage portion. Thereby, obliquely incident light can be sufficiently shielded.

(Regarding the Manufacturing Process of the Liquid Crystal Device of the First Embodiment) Next, the manufacturing process of the liquid crystal device of the first embodiment having the above structure will be described. As a manufacturing process of the liquid crystal device of the present embodiment, a normal so-called high-temperature polysilicon process can be used, and the process will be briefly described. First, a quartz substrate,
A substrate such as a hard glass substrate or a silicon substrate is prepared.
Here, annealing is preferably performed at a high temperature of about 900 to 1300 ° C. in an atmosphere of an inert gas such as N ₂ (nitrogen), and pre-processing is performed so that distortion generated in the element substrate in a high-temperature process performed later is reduced. It is preferable to keep it. That is, it is preferable to heat-treat the substrate in advance at the same temperature or a higher temperature in accordance with the highest temperature of the manufacturing process.

Next, low pressure CVD (for example, a pressure of about 20 to
An amorphous silicon film is formed on a device substrate by CVD (40 Pa) at a temperature of about 450 to 550 ° C. and a flow rate of about 400 to 600 cc / min using a monosilane gas, a disilane gas, or the like. Thereafter, the amorphous silicon film is annealed in a nitrogen atmosphere at about 600 to 700 ° C. for about 1 to 10 hours, so that the polysilicon film is solid-phase grown to a thickness of about 50 to 200 nm. Let it.

At this time, when an n-channel type pixel driving TFT is formed as the pixel driving TFT, Sb (antimony), As (arsenic), P
Impurity ions of a group V element such as (phosphorus) may be slightly doped by ion implantation or the like. Also, the pixel driving T
When FT is a p-channel type, B (boron), G
Impurity ions of group III elements such as a (gallium) and In (indium) may be slightly doped by ion implantation or the like. Next, a semiconductor layer having a predetermined pattern is formed.
That is, a storage capacitor electrode extending from a semiconductor layer forming a pixel driving TFT is formed in a region where a capacitor line is formed below a data line and a region where a capacitor line is formed along a scanning line, in particular. I do.

Next, the storage capacitor electrode and the semiconductor layer forming the TFT 30 for driving the pixel are heated to about 900 to 1300 ° C.
Thermal oxidation at a temperature of about 1000 ° C., preferably about 1000 ° C., to form a thermal silicon oxide film having a relatively thin thickness of about 30 nm, and a high-temperature silicon oxide film (HTO film) Silicon film about 50n
An insulating film which is deposited to a relatively small thickness of m and serves as a gate insulating film of a TFT for driving a pixel having a multilayer structure and a dielectric film for forming a capacitor is formed. As a result, the thickness of the semiconductor layer and the storage capacitor electrode is about 30 to 150 nm, and the thickness of the insulating film is about 20 to 150 nm. By shortening the high-temperature thermal oxidation time as described above, it is possible to prevent warpage due to heat, particularly when a large substrate of about 8 inches is used. However, an insulating film having a single-layer structure may be formed only by thermally oxidizing the polysilicon film. A dose of about 3 × 10 ¹² / P ions, for example, is added to the semiconductor layer portion serving as the storage capacitor electrode.
The resistance may be reduced by doping in cm ² .

Next, after depositing a polysilicon film by a low pressure CVD method or the like, P is thermally diffused to make the polysilicon film conductive. Alternatively, a doped silicon film in which P ions are introduced simultaneously with the formation of the polysilicon film may be used. Next, the polysilicon film is patterned to form a predetermined pattern of scanning lines and capacitance lines as shown in FIG. The thickness of these scanning lines and capacitance lines is, for example, about 350 nm.

Next, when the TFT for driving a pixel is an n-channel TFT having an LDD structure, a part of a scanning line is first formed in a semiconductor layer to form a low-concentration source region and a low-concentration drain region. Using a gate electrode to be a diffusion mask, a low concentration of impurity ions 60 of a group V element such as P (for example, P ions of 1 × 10 ^{13 to} 3 × 10 ¹³ / cm 3)
Doping at a dose of ² ). Thus, the semiconductor layer below the scanning line becomes a channel region. The resistance of the capacitance line and the scanning line is also reduced by the doping of the impurity ions.

Subsequently, in order to form a high-concentration source region and a high-concentration drain region constituting a TFT for driving a pixel, a resist layer is formed on the scanning line with a mask wider than the scanning line. At a high concentration (for example, P ions of 1 × 10 ^{15 to} 3 ×
Doping (at a dose of 10 ¹⁵ / cm ² ). In the case where a TFT for driving a pixel is a p-channel type, B (boron) or the like is used to form a low-concentration source region and a low-concentration drain region and a high-concentration source region and a high-concentration drain region in a semiconductor layer. Doping is performed using an impurity ion of a group III element. Note that, for example, a TFT having an offset structure may be used without doping with low-concentration impurity ions, and an ion implantation technique using P ions, B ions, or the like may be performed using a gate electrode that is a part of a scanning line as a mask. A self-aligned TFT may be used. The resistance of the capacitance line and the scanning line is further reduced by the doping of the impurity.

By repeating the above steps again and performing impurity ions of group III elements such as B ions,
A p-channel TFT can be formed. Accordingly, it is possible to form a data line driving circuit and a scanning line driving circuit having a complementary structure composed of an n-channel TFT and a p-channel TFT in a peripheral portion on the element substrate. As described above, when the semiconductor layer forming the pixel driving TFT is formed of a polysilicon film, the pixel driving TF can be formed.
The data line driving circuit and the scanning line driving circuit can be formed in substantially the same steps when forming T, which is advantageous in manufacturing.

Next, a TEOS (tetra-ethyl-ortho-silicate) gas and a TEB (tetra-ethyl-boat) are formed so as to cover the scanning lines and the capacitance lines in the pixel driving TFT by, for example, normal pressure or reduced pressure CVD. NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphor silicate glass), etc. A first interlayer insulating film made of a silicate glass film, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the first interlayer insulating film is about 500 to 1500 nm
Is preferred.

Next, after performing an annealing process at about 1000 ° C. for about 20 minutes to activate the high-concentration source region and the high-concentration drain region, a contact hole for the data line is formed by reactive ion etching and reactive ion etching. It is formed by dry etching such as beam etching or by wet etching. Further, a contact hole for connecting a scanning line or a capacitance line is formed in the first interlayer insulating film.

Next, a low-resistance metal such as aluminum, a metal silicide, or the like is deposited on the first interlayer insulating film by sputtering or the like to a thickness of about 100 to 500 nm, and further, a photolithography step, an etching step, and the like. To form a data line by patterning. Next, NSG, PSG, BSG, BSG are used to cover the data lines by using, for example, normal pressure or reduced pressure CVD, TEOS gas, or the like.
A second interlayer insulating film made of a silicate glass film such as PSG, a silicon nitride film, a silicon oxide film, or the like is formed. The thickness of the second interlayer insulating film is preferably about 500 to 1500 nm.

Next, in the pixel driving TFT, a contact hole for electrically connecting the pixel electrode and the high-concentration drain region is formed by dry etching such as reactive ion etching or reactive ion beam etching.
It is formed on an interlayer insulating film. Next, on the second interlayer insulating film,
A transparent conductive film such as an ITO film is deposited to a thickness of about 50 to 200 nm by sputtering or the like, and the transparent conductive film is patterned to form a pixel electrode. Next, an alignment film material such as polyimide is applied to a film thickness of about 30 to 50 nm using a spin coater to form an alignment film on the entire surface. Subsequently, in order to make the alignment film formed as described above have a predetermined pretilt angle, for example, in the case shown in FIG. 2, a rubbing process is performed in a predetermined direction indicated by an arrow F1 from the lower right to the upper left of the drawing. .

On the other hand, for the counter substrate 20, a glass substrate or the like is first prepared, and after a metal chromium is sputtered as a light shielding film, for example, a photolithography step is performed.
After an etching process, the substrate is formed into a predetermined pattern shown in FIG. These light-shielding films may be formed of a material such as resin black in which carbon or Ti is dispersed in a photoresist, in addition to a metal material such as Cr, Ni, or Al.

Thereafter, a transparent conductive film such as ITO is formed on the entire surface of the opposing substrate by sputtering or the like to a thickness of about 50 to 200
The counter electrode is formed by depositing to a thickness of nm. Further, similarly to the element substrate side, a film thickness of 10 nm to 50 nm
An alignment film made of an organic film such as polyimide of about nm is formed. Subsequently, a rubbing process is performed on the alignment film to have a predetermined pretilt angle. The rubbing direction is
The alignment film is formed by performing the rubbing process in a direction perpendicular to the rubbing direction on the previous element substrate side, that is, in a predetermined direction indicated by an arrow F2 from the lower left to the upper right in FIG.

Finally, the element substrate on which the layers are formed as described above and the opposing substrate are arranged so that the rubbing directions intersect at 90 °, and are bonded together with a sealing material so that the cell gap becomes 4 μm. Is prepared. A liquid crystal device of the present embodiment is obtained in which liquid crystal with optimized retardation is sealed in a panel and a light-shielding film having a protruding portion is formed at a corner of each pixel.

In the liquid crystal device of the above embodiment, a case has been described where the present invention is applied to an active matrix type liquid crystal device using a three-terminal element represented by a TFT (Thin-Film Transistor) element. TFD
The present invention can also be applied to an active matrix type liquid crystal device using a two-terminal type device represented by a (Thin-Film Diode) device and a passive matrix type liquid crystal device. Further, the present invention can be applied to not only a transmission type liquid crystal device but also a reflection type liquid crystal device. Further, the present invention can be applied even when the display system is a color display system.

(Second Embodiment) Next, a second embodiment of the present invention will be described. The second embodiment is the first embodiment.
The difference from the third embodiment is that the overhanging portion of the light-shielding film is formed at two corners of the pixel. All other parts are the same as in the first embodiment. Therefore, here, only the counter substrate on which the light shielding film is formed will be described. FIG.
FIG. 4 is a diagram showing a planar arrangement of the counter substrate of the present embodiment, and is a diagram corresponding to FIG. 3 of the first embodiment. As shown in FIG. 5, the light shielding film 24 of the present embodiment is formed in a lattice so as to define the pixel 9a region.
Overhangs 24a and 24a 'are formed at two corners (the upper left and upper right in FIG. 5). This 2
The two overhang portions 24a and 24a 'are located in the extending directions of the rubbing direction F1 of the alignment film on the element substrate side and the rubbing direction F2 of the alignment film on the counter substrate side, respectively. Also,
The overhang portion 24a 'is formed of a thinner film than the overhang portion 24a and the light-shielding film 24 in order to prevent the peeled alignment film from reattaching to the step.

The sectional structure of this embodiment is substantially the same as that of FIG. In the rubbing direction (F1 direction) of the alignment film 13 on the element substrate 10 side, as shown in FIG.
30 are formed, and are raised higher than the portion of the pixel 9a. Therefore, when the rubbing treatment is performed, the peeled alignment film may be transported to the high protruding corner and re-attached. An abnormal alignment region of the liquid crystal is generated in a portion where the alignment film is re-attached, and becomes a light-exit portion.

On the other hand, in the rubbing direction (F2 direction) of the alignment film 23 on the counter substrate 20 side, as shown in FIG.
4 are arranged and are slightly raised compared to the portion of the pixel 9a. Therefore, when performing rubbing treatment,
The peeled alignment film may be transported to the raised corner and re-attached. An abnormal alignment region of the liquid crystal is generated in a portion where the alignment film is re-attached, and becomes a light-exit portion.

As described above, the element substrate 10 side and the opposing substrate 2
Since there is a possibility that the alignment film peeled off at the time of performing the rubbing treatment may be re-attached to any of the 0 sides, there is a possibility that the alignment film may become a starting point of a light leakage portion. Therefore, even if the alignment film is re-adhered and an abnormal alignment region is generated and becomes the starting point of the light leakage portion, the overhanging portions 24a and 24a of the light shielding film are provided at both corners.
If 4a 'is provided, a display defect is not recognized. The sizes of the overhang portions 24a and 24a 'may be the same as those in the first embodiment. That is, it is only necessary to have a size capable of blocking the light-exiting portion caused by the abnormal alignment of the liquid crystal. It is good to do. Further, in the case where unnecessary scattered light is shielded, it is preferable that the size is slightly larger, and is 1.5 to 3 times the size of the light leakage portion. Thereby, obliquely incident light can be sufficiently shielded. The method of manufacturing the opposing substrate differs from that of the first embodiment in that the overhang portion 24a 'is
The patterning is performed in two stages in order to form a film having a thickness smaller than that of the light shielding film 24 and the light shielding film 24, and the shape of the patterning mask is different. First, in the first stage,
The overhangs 24a, 24a 'and the light-shielding film 24 are simultaneously formed, and then, in the second stage, the overhangs 24a and the light-shielding film 24 are overlapped with the overhangs 24a and the light-shielding film 24 formed in the first stage. Are formed simultaneously again. Thus, the overhang portion 24a 'can be formed with a smaller film thickness than the overhang portion 24a and the light shielding film 24.

(Third Embodiment) Next, a third embodiment of the present invention will be described. The third embodiment is similar to the first embodiment.
The second embodiment differs from the second and third embodiments in that the overhanging portion of the light-shielding film is formed in a pentagonal shape. All other parts are the same as in the first and second embodiments. Therefore, here, only the counter substrate on which the light shielding film is formed will be described. FIG. 6 is a diagram showing a planar arrangement of the counter substrate of the present embodiment, and is a diagram corresponding to FIG. 3 of the first embodiment. As shown in FIG. 6, the light-shielding film 24 of the present embodiment is formed in a lattice shape so as to define the pixel 9a region, and pentagonal projections 24a and 24a 'are formed at two corners of the pixel 9a. Have been. The two overhang portions 24a and 24a 'are respectively located in the extending directions of the rubbing direction F1 of the alignment film on the element substrate side and the rubbing direction F2 of the alignment film on the counter substrate side. The overhang portion 24a 'is formed to have a smaller thickness than the overhang portion 24a and the light shielding film 24 in order to prevent the peeled alignment film from re-adhering to the step portion.

As described above, the overhanging portion of the light-shielding film is not limited to a circle, but may be a polygon such as a triangle, a quadrangle, and a pentagon. The pixel 9a is formed so as to effectively block unnecessary scattered light in the abnormal alignment region and the periphery thereof and to increase the aperture ratio of the pixel 9a as much as possible. The sizes of the overhang portions 24a and 24a 'may be the same as those in the first embodiment. That is, it is only necessary to have a size capable of blocking the light-exiting portion caused by the abnormal alignment of the liquid crystal, so that it is slightly larger than the size of the light-exiting portion, and about 1.2 to 2 times the size of the light-exiting portion in area ratio. It is good to do. When shielding unnecessary scattered light,
Further, it is preferable that the size is slightly larger and is 1.5 to 3 times the size of the light leakage portion. Thereby, obliquely incident light can be sufficiently shielded. The method of manufacturing the opposing substrate is different from that of the first embodiment in that the patterning is divided into two steps in order to form the overhang 24a 'with a smaller thickness than the overhang 24a and the light shielding film 24. And that the shape of the patterning mask is different. First,
In the stage, the overhang portions 24a, 24a 'and the light shielding film 24 are formed.
Are formed at the same time, and then, in the second stage, the overhang portion 24a and the light-shielding film 24 are simultaneously formed once again so as to overlap the overhang portion 24a and the light-shielding film 24 formed in the first stage. Thus, the overhang portion 24a 'can be formed with a smaller film thickness than the overhang portion 24a and the light shielding film 24.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described. The fourth embodiment is the first embodiment.
The difference from the third embodiment is that the rubbing direction of the alignment film is not diagonal to the pixel but is along two vertical and horizontal sides of the square pixel. All other parts are the same as in the first embodiment. Therefore, here, only the counter substrate on which the light shielding film is formed will be described. FIG.
FIG. 4 is a diagram illustrating a planar arrangement of a counter substrate of the present embodiment, and is a diagram corresponding to FIG. 3 of the first embodiment. As shown in FIG. 7, the light-shielding film 24 of the present embodiment is formed in a lattice so as to define the pixel 9a region.
One of the sides protrudes more in the pixel 9a than the other three sides. That is, in FIG. 7, the distance d1 between the pixel 9a and the light-shielding film 24 is above and below the paper and on the left of the paper.
While the distances d2 and d4 are extremely small, the distance d3 between the pixel 9a and the light shielding film 24 is as large as about 2.5 μm on the right side of the drawing.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described. The fifth embodiment is the first embodiment.
The difference from the fourth to fourth embodiments is that the alignment mode of the liquid crystal uses a vertical alignment mode instead of the horizontal alignment mode using a TN (twisted nematic) liquid crystal. In a projection type liquid crystal device or the like, a vertical alignment mode is adopted to realize a high contrast ratio.
The liquid crystal layer assumes a predetermined alignment state by the action of the alignment film when no electric field is applied from the pixel electrode. In the vertical alignment mode, the liquid crystal molecules assume a vertical alignment state having a pretilt angle of several degrees when no electric field is applied.
A rubbing process is performed on the alignment film made of an organic film in order to give the liquid crystal molecules a vertical alignment state having a pretilt angle.

The rubbing direction of the alignment film is a direction in which the liquid crystal molecules are pretilted. Therefore, when the liquid crystal device is seen through from above, the rubbing (anti-parallel rubbing) is performed between the alignment film on the element substrate side and the alignment film on the counter substrate side in opposite directions. FIG. 8 shows a planar arrangement of the opposing substrate in the liquid crystal device of the present embodiment using the vertical alignment mode. As shown in FIG. 8, the light-shielding film 24 is formed in a lattice shape so as to define the pixel 9a region, and among the four sides of the pixel 9a, the overhanging portion (d
4) is larger than the other three side overhangs. In the figure, arrow F1 indicates the rubbing direction of the alignment film on the element substrate side, and arrow F2 indicates the rubbing direction of the alignment film on the counter substrate side. Thus, the rubbing directions F1 and F
2 are opposite to each other.

FIG. 9 is a view for explaining the cross-sectional structure of the liquid crystal device according to the present embodiment, and is a cross-sectional view along the line BB 'in FIG. 9 differs from the cross-sectional structure of the TN mode liquid crystal device shown in FIG. 4 in the orientation direction of the liquid crystal layer 40. In the present embodiment shown in FIG. 9, the liquid crystal molecules are viewed slightly obliquely from the actual state for easy understanding.
1 and pre-tilt along F2 and vertically aligned. Other configurations of the element substrate and the counter substrate are the same as those in FIG. Also in this embodiment, the abnormal alignment region 49 may be generated at the pixel end in the rubbing direction.

The abnormal alignment region is generated when the alignment film peeled by the rubbing moves to a higher portion of the pixel end portion in the rubbing direction and adheres again. Therefore, if the light-shielding film at the edge of the pixel in the rubbing direction is slightly extended, it is possible to shield the light-exited portion caused by the abnormal alignment of the liquid crystal. In the example of FIG. 8, an overhanging portion 24a of the light-shielding film 24 is provided above the pixel 9a in the rubbing direction on the element substrate side. The re-attachment of the light-shielding film is particularly effective in
8 are likely to occur at two corners (upper left corner and upper right corner in FIG. 8) adjacent to the wiring intersection. Therefore, it is also effective to provide the projecting portions 24a of the light-shielding film 24 in a circular shape at these two corners.

By configuring the liquid crystal device in this manner, even if the alignment film is peeled off during the rubbing process and re-attached to the edge of the pixel to cause an abnormal alignment of the liquid crystal to cause light leakage, the display light is blocked. A display image having a high contrast ratio can be obtained without being recognized as a display defect.

Next, examples of electronic equipment using the liquid crystal device of the present invention are shown in FIGS. FIG. 10A is a perspective view illustrating an example of a mobile phone. Reference numeral 1000 denotes a mobile phone main body, of which 1001 is a liquid crystal device of the present invention. FIG. 10B is a perspective view illustrating an example of a wristwatch-type electronic device. Reference numeral 1100 denotes a watch main body, and 1101 denotes a liquid crystal device of the present invention. FIG. 10C is a perspective view illustrating an example of a portable information processing device such as a word processor or a personal computer. In the figure, reference numeral 1200 denotes an information processing apparatus; 1202, an input unit such as a keyboard; 1204, an information processing apparatus main body; 1206, a liquid crystal device of the present invention. When the liquid crystal device of the present invention is used in these electronic devices, the light leakage portion caused by the abnormal alignment of the liquid crystal generated in the corner of the pixel is effectively shielded, so that a clear image display with a strong contrast ratio is obtained. Electronic device is obtained.

The liquid crystal device in each of the embodiments described above can be applied to, for example, a projection type color liquid crystal device. As an example of another electronic apparatus, an example of a projection type color liquid crystal device (color liquid crystal projector) equipped with a transmission type liquid crystal light valve using the liquid crystal device of the present invention is shown in FIG.
Shown in FIG. 11 is a schematic configuration diagram showing a main part of a projection type color liquid crystal device equipped with a transmission type liquid crystal light valve.
In the figure, reference numeral 2700 denotes a light source, 2013 and 2014 denote dichroic mirrors, 2015, 2016 and 2017 denote reflection mirrors, 2300R, 2300G and 2300B denote transmissive liquid crystal light valves using the liquid crystal device of the present invention,
Reference numeral 2400 denotes a cross dichroic prism, 2500 denotes a projection lens. The light source 2700 includes a lamp 2711 such as an ultra-high pressure mercury lamp, and a reflector 2710 that reflects light. The dichroic mirror 2013 for reflecting blue light and green light transmits red light of the light flux from the light source 2700 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 2017 and enters the liquid crystal light valve 2300R for red light. On the other hand, among the color lights reflected by the dichroic mirror 2013, the green light is the dichroic mirror 20 for the green light.
The liquid crystal light valve 230 for green light reflected by 14
It is incident on 0G. On the other hand, the blue light also passes through the second dichroic mirror 2014. The transmitted blue light is reflected by the reflection mirrors 2015 and 2016, and enters the liquid crystal light valve 2300B for blue light. In order to correct the optical path difference between blue light and other color light, it is preferable to arrange a relay lens system in the optical path.

The three color lights modulated by the respective liquid crystal light valves enter the cross dichroic prism 2400. This prism is formed by bonding four right angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface. The three color lights are combined by these dielectric multilayer films to form light indicating a color image. The synthesized light is projected on a screen 2600 by a projection lens 2500 as a projection optical system, and an image is displayed in an enlarged manner. The above three liquid crystal light valves 2300R, 230
The liquid crystal device of the present invention is used for each of 0G and 2300B. The use of the liquid crystal device of the present invention effectively shields a light dropout caused by an abnormal alignment of liquid crystal generated at a corner of a pixel, thereby obtaining a clear image display with a strong contrast ratio. Type color liquid crystal device. In particular, in the case of using a liquid crystal that has been subjected to a polymer stabilization treatment in order to improve light resistance reliability, unnecessary scattered light is effectively shielded, so that a clear image display with a strong contrast ratio can be obtained. A projection type color liquid crystal device can be obtained.

FIG. 12 shows an example of a projection type color liquid crystal device equipped with a reflection type liquid crystal light valve using the liquid crystal device of the present invention as another example of electronic equipment. FIG. 12 is a schematic configuration diagram showing a main part of a projection type color liquid crystal device equipped with a reflection type liquid crystal light valve. The projection type color liquid crystal device of FIG. 12 has a light source unit 17 arranged along the system optical axis L.
10, integrator lens 1720, polarization conversion element 1
730, a polarization beam splitter 1400 that reflects an S-polarized light beam emitted from the polarization illumination device 1700 by an S-polarized light beam reflection surface 1401, and a reflection from an S-polarized light reflection surface 1401 of the polarization beam splitter 1400. Blue light (B)
Dichroic mirror 1412 for separating the blue light component, and liquid crystal light valve 130 for modulating the separated blue light (B)
0B, red light (R) of the luminous flux after blue light is separated
Dichroic mirror 14 that reflects and separates the components of
13. A liquid crystal light valve 1300R for modulating the separated red light (R), and a liquid crystal light valve 1 for modulating the remaining green light (G) transmitted through the dichroic mirror 1413.
300G, three liquid crystal light valves 1300B, 130
The light modulated by the 0R and 1300G is converted to dichroic mirrors 1412 and 1413 and a polarization beam splitter 140
The projection optical system 1500 is composed of a projection lens that combines light at 0 and projects the combined light onto the screen 1600. The above three liquid crystal light valves 1300R, 1
The liquid crystal device of the present invention is used in each of 300G and 1300B. In the reflective liquid crystal light valves 1300R, 1300G, and 1300B of the present embodiment, the pixel electrodes (for example, reference numeral 9 in FIG. 4) on the element substrate side are changed from a transparent conductive film to a highly light-reflective metal film. I do. The use of the liquid crystal device of the present invention effectively shields a light leak portion caused by an abnormal alignment of liquid crystal generated at a corner of a pixel, thereby obtaining a clear image display with a strong contrast ratio. Type color liquid crystal device. In particular, even when using a liquid crystal that has been subjected to a polymer stabilization treatment to improve light stability, unnecessary scattered light is effectively shielded, so that a clear image display with a strong contrast ratio can be obtained. A projection type color liquid crystal device can be obtained.

[0063]

According to the present invention, the alignment film is peeled off during the rubbing treatment, and is carried to a higher part of the pixel corner where the driving circuit wiring and the driving element are arranged, and is moved to the pixel corner. Even if the peeled alignment film is re-adhered and an abnormal alignment portion of liquid crystal molecules is generated, so-called "light leakage", display failure is not recognized because it is effectively shielded by the light shielding film,
A display image having a high contrast ratio can be obtained. Further, according to the present invention, since only the abnormally oriented portion is locally shielded, it is possible to ensure a relatively large aperture ratio of the pixel.

In particular, even when a vertical alignment film which is easily peeled off during the rubbing treatment is used, display failure does not occur and a display screen having a high contrast ratio can be obtained. In addition, unnecessary scattered light that appears when using a liquid crystal that has been subjected to a stabilization treatment with an alignment-dispersible polymer in order to enhance light resistance reliability is effectively shielded, so that a display image with a higher contrast ratio can be obtained. . Although the present invention is effective for all liquid crystal display devices, in order to realize a high contrast ratio in a projection type liquid crystal device, the liquid crystal may adopt a vertical alignment mode. In this case, the present invention is particularly effective. is there. The present invention is applicable not only to an active matrix type liquid crystal device using a three-terminal type device represented by a TFT device, but also to an active matrix type liquid crystal device using a two-terminal type device represented by a TFD element, and to a passive matrix type liquid crystal device. The present invention can also be applied to liquid crystal devices. Further, the present invention can be applied to not only a transmission type liquid crystal device but also a reflection type liquid crystal device. Further, the present invention is applicable even if the display system is a color display system.

[Brief description of the drawings]

FIG. 1 is a perspective view of the entire liquid crystal device of the present invention as viewed from above.

FIG. 2 is a perspective view of the liquid crystal device shown in FIG.
FIG. 3 is a plan view showing a plurality of pixel groups adjacent to each other.

FIG. 3 is a plan view of the opposing substrate seen through from above.

FIG. 4 is a sectional view taken along line AA ′ of FIGS. 2 and 3;

FIG. 5 is a plan view of an opposing substrate according to a second embodiment of the present invention as seen through from above.

FIG. 6 is a plan view of a counter substrate according to a third embodiment of the present invention as seen through from above.

FIG. 7 is a plan view of a counter substrate according to a fourth embodiment of the present invention as seen through from above.

FIG. 8 is a plan view of a counter substrate according to a fifth embodiment of the present invention as seen through from above.

FIG. 9 is a sectional view taken along the line B-B 'of FIG.

FIG. 10 illustrates an example of an electronic apparatus using the liquid crystal device of the present invention.

FIG. 11 is a schematic configuration diagram illustrating an example of a projection type liquid crystal device using the liquid crystal device of the present invention.

FIG. 12 is a schematic configuration diagram showing another example of a projection type liquid crystal device using the liquid crystal device of the present invention.

FIG. 13 is a plan view showing a plurality of pixel groups adjacent to each other when a conventional liquid crystal device is seen through from above.

14 is a plan view of the counter substrate of the liquid crystal device shown in FIG. 13 as seen through from above.

FIG. 15 is a sectional view taken along the line C-C ′ in FIG. 14;

FIG. 16 is a diagram illustrating an abnormal alignment region and an unnecessary scattering region.

[Explanation of symbols]

3 scanning line, 4 capacitance line, 6 data line, 9 pixel electrode, 10 element substrate, 13 alignment film, 20 counter substrate, 22 ... counter electrode, 23 ... alignment film, 24 ... light shielding film, 30 ... TFT, 40 ... liquid crystal layer, 50 ... liquid crystal device,

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03B 21/00 G03B 21/00 E 21/14 21/14 Z G09F 9/30 338 G09F 9/30 338 349 349C F-term (reference) 2H088 EA12 HA03 HA08 HA14 JA05 MA02 2H090 HB08Y KA05 MA01 MB01 2H091 FA34Y GA06 GA13 HA07 LA17 MA07 2H092 GA29 JA24 JA41 JA46 JB51 JB69 KA05 KA10 MA05 MA27 MA41 NA07 BA05A04 BA07A09 DA14 DA15 DB04 EA04 EA07 EB02 ED15

Claims (12)

[Claims] At least a pixel driving electrode is provided on an inner surface of each of a pair of substrates arranged to face each other with a gap therebetween, and an alignment film is provided on a surface of the pixel driving electrode. A plurality of pixels having a liquid crystal layer interposed therebetween; a light-shielding film provided around each pixel; and the light-shielding film is rubbed by at least one of the pair of alignment films of each pixel. A liquid crystal device having an overhang at each pixel end in the direction. 2. The liquid crystal device according to claim 1, wherein the overhang is circular. 3. The liquid crystal device according to claim 1, wherein the overhang is a polygon. 4. The liquid crystal device according to claim 1, wherein the overhanging portions are formed at two adjacent corners of each pixel. 5. The liquid crystal device according to claim 1, wherein the overhang portion is formed linearly at an end of each pixel. 6. The liquid crystal device according to claim 1, wherein the light shielding film is provided on a counter substrate side. 7. The liquid crystal device according to claim 1, wherein the liquid crystal device is of an active matrix driving type. 8. The liquid crystal device according to claim 7, wherein the active matrix driving method is a thin film transistor method. 9. The liquid crystal device according to claim 1, wherein the liquid crystal is in a vertical alignment mode. 10. The liquid crystal device according to claim 1, wherein the liquid crystal is subjected to a stabilization treatment with an alignment-dispersing polymer. 11. An electronic apparatus comprising the liquid crystal device according to claim 1. 12. A projection type liquid crystal device comprising the liquid crystal device according to claim 1. Description: