JP5482279B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  This type of electro-optical device includes a pixel electrode, a scanning line for selectively driving the pixel electrode, a data line, and a TFT (Thin Film Transistor) as a pixel switching element on a substrate, and is active. It is configured to be capable of matrix driving. In such an electro-optical device, in order to prevent light source light from leaking from the gap between adjacent pixel electrodes, a light-shielding film is formed in the gap between the pixel electrodes, and a non-open region (that is, for each pixel). Regions where light contributing to display is not emitted) are formed.

  However, a part of the light source light is refracted, scattered, or reflected by elements, wirings, etc. formed in the electro-optical device, so that it leaks from the non-opening region and lowers the contrast ratio of the display image. . For this reason, for example, Patent Documents 1 and 2 disclose techniques for improving the contrast ratio of a display image by providing a retardation film and an optical compensation plate. Patent Document 3 discloses a technique for preventing reflection on the side wall of the conductive pattern and improving the contrast ratio of the display image by forming the cross section of the conductive pattern on the substrate in an inversely tapered shape.

Japanese Patent Laid-Open No. 10-10513 JP 2008-256958 A JP 2009-31373 A

  However, in the techniques disclosed in Patent Documents 1 and 2, it is necessary to incorporate a retardation film and an optical compensation plate in the liquid crystal panel, and the configuration of the apparatus becomes complicated. Therefore, the manufacturing method may be technically difficult or the manufacturing cost may be increased. Further, the technique disclosed in Patent Document 3 involves technical difficulties when forming the cross section of the conductive pattern on the substrate in an inversely tapered shape. Specifically, it is necessary to adjust the etching angle when forming the conductive pattern in an inversely tapered shape to an optimal value in order to minimize light leakage from the non-opening region. Since it differs depending on the electro-optical device, the selection is technically difficult. Further, if the conductive pattern is to be etched in a reverse taper shape, the etching process becomes complicated. Furthermore, the reverse taper shape may adversely affect the quality of the film formed on it or the attachment. As described above, the above-described technique has a technical problem that various inconveniences in practice occur.

  The present invention has been made in view of, for example, the above-described problems. An electro-optical device capable of displaying a high-quality image by improving a contrast ratio of a display image, and an electronic device using such an electro-optical device. It is an object to provide a device.

An electro-optical device according to one embodiment of the present invention includes a pixel electrode, a conductive layer disposed in a pixel region in which the pixel electrode is arranged, and a protective layer disposed so as to face the substrate with the conductive layer interposed therebetween. An antireflection film that includes a material having a light reflectance lower than that of the conductive layer and is disposed to face the substrate with the conductive layer and the protective layer interposed therebetween, and the substrate with the antireflection film interposed therebetween. An insulating film disposed so as to face the substrate, and a contact hole formed at a position overlapping the conductive layer and the protective film of the insulating film when viewed from the direction from the insulating film toward the substrate, The antireflection film at least partially covers an end face of the conductive layer and an end face of the protective layer, and the contact hole overlaps with a data line when viewed from the direction.
The electro-optical device according to the present invention includes a pixel electrode, a conductive layer disposed in a pixel region in which the pixel electrode is arranged, and a protective layer disposed so as to face the substrate with the conductive layer interposed therebetween. An antireflection film that includes a material having a light reflectance lower than that of the conductive layer and is disposed to face the substrate with the conductive layer and the protective layer interposed therebetween, and the substrate with the antireflection film interposed therebetween. An insulating film disposed so as to face the substrate, and a contact hole formed at a position overlapping the conductive layer and the protective film of the insulating film when viewed from the direction from the insulating film toward the substrate, The antireflection film may cover at least partially an end face of the conductive layer and an end face of the protective layer.
The electro-optical device according to another aspect of the present invention further includes an electrode disposed in the contact hole, and the electrode is electrically connected to the antireflection film or the protective layer.
The electro-optical device according to another aspect of the invention is characterized in that the end face of the conductive layer and the end face of the protective layer are continuous.
The electro-optical device of the present invention according to the present invention includes a pixel electrode provided for each pixel on a substrate, wiring for performing an electro-optical operation in a pixel region in which the pixel electrode is arranged, an electrode, A conductive layer constituting at least a part of the electronic element; a protective layer formed on an upper layer of the conductive layer; and a material having a light reflectance lower than that of the conductive layer, the upper layer of the conductive layer and the protective layer And an antireflection film that at least partially covers end surfaces of the conductive layer and the protective layer, an insulating film formed on an upper layer of the antireflection film, and the conductive layer and the protection in the insulating film A contact hole formed so as to expose the antireflection film or the protective layer at a position overlapping the layer in a plane.

  According to the electro-optical device of the present invention, during the operation, for example, supply of an image signal from a data line formed on the substrate to the pixel electrode is controlled, and so-called active matrix image display is possible. The image signal is generated at a predetermined timing by turning on / off a transistor, which is a switching element electrically connected between the data line and the pixel electrode, according to a scanning signal supplied from the scanning line. To the pixel electrode via the transistor. The pixel electrode is a transparent electrode made of a transparent conductive material such as ITO (Indium Tin Oxide), for example, and a plurality of pixel electrodes are provided in a matrix form in a region to be a display region on the substrate corresponding to the intersection of the data line and the scanning line. It is done.

  The scanning line, the data line, and the transistor are provided not in the opening area of each pixel but in the non-opening area so that display is not hindered. Here, the “opening region” refers to a region where an electro-optic operation by an electro-optic element or an electro-optic material is actually performed in each pixel, such as a region where light that actually contributes to display is emitted for each pixel. . In addition, the “non-opening region” is a region that separates the opening region of each pixel from each other, and in each pixel, an electro-optical operation using an electro-optical element or an electro-optical material is actually performed in each pixel. An area that is not performed.

  In the present invention, a conductive layer constituting at least part of wiring, electrodes, and electronic elements for performing an electro-optical operation is formed in a pixel region in which pixel electrodes are arranged. The conductive layer may be, for example, a data line or a scanning line, or may be configured as one of a pair of capacitor electrodes that form an additional capacitor for improving the voltage holding characteristics of the pixel electrode. The conductive layer is formed including a material having relatively high conductivity such as Al (aluminum).

  A protective layer for protecting the conductive layer is formed on the conductive layer. The protective layer includes, for example, TiN (titanium nitride) that has conductivity and is relatively difficult to oxidize. The conductive layer and the protective layer are at least partially or entirely disposed in the non-opening region as viewed in a plan view. The conductive layer and the protective layer may be formed of a light shielding film that reflects or absorbs light, and the non-opening region may be defined at least partially or redundantly.

  In the present invention, an antireflection film is further formed on the conductive layer and the protective layer. The antireflection film contains a material having a light reflectance lower than that of the conductive layer such as TiN or W (tungsten), and is formed so as to at least partially cover the end faces of the conductive layer and the protective layer.

  Here, in particular, the end surfaces of the conductive layer and the protective layer are places where light leakage is likely to occur due to reflection of light source light incident during operation. Therefore, if no countermeasure is taken, the contrast of the display image is lowered due to light leakage, and there is a possibility that the image quality is lowered.

  However, in the present invention, in particular, the antireflection film is formed so as to cover the end faces of the conductive layer and the protective layer. Therefore, reflection of light at the end faces of the conductive layer and the protective layer is suppressed, and the occurrence of light leakage can be reduced. The antireflection film may be formed so as to cover all the end surfaces of the conductive layer and the protective layer, or may cover the end surfaces only in a portion where light leakage is likely to occur.

  An insulating film is formed on the antireflection film, and a contact hole is formed in the insulating film so as to expose the antireflection film or the protective layer at a position overlapping the conductive layer and the protective layer in a plane. That is, the contact hole is provided so as to reach the antireflection film through the insulating film, or to reach the protective layer through the insulating film and the antireflection film. According to this contact hole, electrical connection with the conductive layer can be realized through the antireflection film and the protective layer.

  In the present invention, since the antireflection film and the protective layer are provided above the conductive layer, a margin for forming the contact hole can be secured, so that the device can be manufactured more suitably. For example, since high accuracy is not required for etching when forming a contact hole, electrical connection between the conductive layer and another layer can be realized more easily.

  As described above, according to the electro-optical device of the present invention, the device can be easily manufactured by covering the conductive layer with the antireflection film and the protective layer. Furthermore, by covering the end surfaces of the conductive layer and the protective layer with an antireflection film, the occurrence of light leakage in the display region can be suppressed. As a result, a high-quality image display having a high contrast ratio can be realized.

  In one aspect of the electro-optical device of the present invention, the conductive layer and the protective layer are simultaneously patterned so that they are formed in the same region as viewed in plan on the substrate.

  According to this aspect, the conductive layer and the protective layer are formed in the same region by patterning at the same time after the two films constituting each are formed. Here, “simultaneously” does not mean that the conductive layer and the protective layer are patterned at the same time, but means that the conductive layer and the protective layer are patterned by the same process. Yes. Specifically, after forming a protective layer on the conductive layer, the conductive layer and the protective layer are etched together.

  If the protective layer is patterned after the conductive layer is patterned (that is, if the conductive layer and the protective layer are patterned separately), an oxide-based insulating film is formed at the interface between the conductive layer and the protective layer. And the resistance value of the conductive layer and the protective layer may increase due to the presence of the insulating film.

  In this embodiment, the above-described increase in resistance can be prevented by patterning the conductive layer and the protective layer together and forming the two layers in the same region. Therefore, the quality of the display image can be further improved.

  In another aspect of the electro-optical device according to the aspect of the invention, the conductive layer includes a first portion extending in a first direction and a second portion extending in a second direction intersecting the first direction, and the antireflection The film is formed so as to cover end surfaces of the conductive layer and the protective layer in an intersecting region where the first portion and the second portion intersect each other.

  According to this aspect, the conductive layer has the first portion extending in the first direction and the second portion extending in the second direction. The first portion and the second portion may be formed as the same layer, or may be formed as different layers such as a scanning line and a data line.

  Here, in particular, the intersection region where the first portion and the second portion intersect with each other is a portion where light leakage is likely to occur due to light reflection at the end face. Therefore, if the end surfaces of the conductive layer and the protective layer are covered with the antireflection film in the intersection region, light leakage can be suppressed extremely efficiently. Therefore, it is possible to suitably improve the quality of the display image.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is included, a projection display device, a television set, a mobile phone, an electronic notebook, a word processor capable of performing high-quality display. Various electronic devices such as a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

1 is a plan view illustrating an overall configuration of an electro-optical device according to an embodiment. It is the HH 'sectional view taken on the line of FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in the electro-optical device according to the embodiment. FIG. 6 is a plan view illustrating a specific configuration of an intersection region in the electro-optical device according to the embodiment. FIG. 5 is a cross-sectional view taken along line AA ′ in FIG. 4. It is process sectional drawing which shows the manufacturing process of the conductive layer which concerns on embodiment. It is sectional drawing which shows the structure of the conductive layer which concerns on a comparative example. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Electro-optical device>
The configuration of the electro-optical device according to the present embodiment will be described with reference to FIGS. 1 to 7. In the following embodiments, a TFT active matrix driving type liquid crystal device with a built-in driving circuit, which is an example of the electro-optical device of the present invention, is taken as an example.

  1 and 2, in the electro-optical device according to the present embodiment, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

  The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a provided with a plurality of pixel electrodes.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  In a region facing the four corners of the counter substrate 20 on the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with a vertical conduction material are arranged. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. Although the detailed structure of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO are formed in an island shape in a predetermined pattern for each pixel on the laminated structure. Has been.

  The pixel electrode 9 a is formed in the image display area 10 a on the TFT array substrate 10 so as to face the counter electrode 21. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9a. Further, in order to perform color display in the image display area 10a, a color filter (not shown in FIG. 2) may be formed on the light shielding film 23 in an area including a part of the opening area and the non-opening area. Good. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the above-described drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled on the TFT array substrate 10 shown in FIGS. Sampling circuit that supplies lines, precharge circuit that supplies pre-charge signals of a predetermined voltage level to multiple data lines in advance of image signals, inspection of quality, defects, etc. of the electro-optical device during production or shipment An inspection circuit or the like may be formed.

  Next, an electrical configuration of the pixel portion of the electro-optical device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the electro-optical device according to this embodiment.

  In FIG. 3, a pixel electrode 9a and a TFT 30 are formed in each of a plurality of pixels formed in a matrix that forms the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during the operation of the electro-optical device according to the present embodiment. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. May be.

  The scanning line 3a is electrically connected to the gate of the TFT 30, and the electro-optical device according to the present embodiment pulse-scans the scanning signals G1, G2,. Gm is applied in this order in a line sequential manner. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6a is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in the liquid crystal as an example of the electro-optical material via the pixel electrode 9a is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel. In the normally black mode, the transmittance is applied in units of each pixel. As a result, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9a in response to supply of an image signal. One electrode of the storage capacitor 70 is electrically connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is electrically connected to the capacitor line 300 having a fixed potential so as to have a constant potential. ing. According to the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and the display characteristics such as improvement of contrast and reduction of flicker can be improved.

  Next, a layer structure unique to the electro-optical device according to the present embodiment will be described with reference to FIGS. FIG. 4 is a plan view showing a specific configuration of the intersecting region in the electro-optical device according to the embodiment, and FIG. 5 is a cross-sectional view taken along the line AA ′ of FIG. FIG. 6 is a process cross-sectional view illustrating the manufacturing process of the conductive layer according to the embodiment, and FIG. 7 is a cross-sectional view illustrating the configuration of the conductive layer according to the comparative example. In FIG. 4 and subsequent figures, for convenience of explanation, only the layers deeply related to the present embodiment are shown among the layers constituting the apparatus, and the other layers are omitted as appropriate.

  4, the electro-optical device according to the present embodiment includes the data line 6a and the third relay layer 90 formed in the same layer as the data line 6a, and the first relay layer 200 and the first relay layer 200 in the same layer. The second relay layer 400 is formed. The data line 6a, the third relay layer 90, the first relay layer 200, and the second relay layer 400 each include a light-shielding material and define a non-opening region in the pixel region.

  The data line 6 a is electrically connected to the first relay layer 200 on the lower layer side through the contact hole 81. The first relay layer 200 is electrically connected to the lower conductive layer (for example, the source region of the semiconductor layer constituting the TFT 30) via the contact hole 82.

  The second relay layer is electrically connected to the lower conductive layer (for example, the drain region of the semiconductor layer constituting the TFT 30) via the contact hole 83. The second relay layer is electrically connected to the upper third relay layer 90 via the contact hole 84. The third relay layer 90 is electrically connected to an upper conductive layer (for example, a pixel electrode) through the contact hole 85.

  Here, in particular, the first relay layer 200 includes a conductive layer 210 and an antireflection layer 220 formed to cover the conductive layer 210 from the upper layer side. Similarly, the second relay layer 400 formed in the same layer as the first relay layer 200 includes a conductive layer 410 and an antireflection layer 420 formed to cover the conductive layer 410 from the upper layer side. .

  In FIG. 5, the conductive layer 210 includes a first layer 211 and a second layer 212 stacked on the first layer 211. The first layer 211 is an example of the “conductive layer” in the present invention, and includes a material having a relatively high conductivity such as aluminum. The second layer 212 is an example of the “protective layer” in the present invention, and includes, for example, TiN (titanium nitride) that has conductivity and is relatively difficult to oxidize. The antireflection layer 220 is an example of the “antireflection film” of the present invention, and includes a material having a light reflectance lower than that of a conductive layer such as TiN or W (tungsten). In particular, the antireflection layer 220 is formed so as to cover the end surfaces of the first layer 211 and the second layer 212 (i.e., the portions that stand up in the vertical direction).

  In FIG. 5A, the data line 6a is formed above the antireflection layer 220 via the interlayer insulating film 40, and through the contact hole 81 formed so as to penetrate the interlayer insulating film 40, The antireflection film 220 is electrically connected. Alternatively, as shown in FIG. 5B, the data line 6a is electrically connected to the protective layer 212 through a contact hole 81 formed so as to penetrate the interlayer insulating film 40 and the antireflection layer 220. Also good.

  In particular, according to the study of the present inventor, the end surfaces of the first layer 211 and the second layer 212 are portions where light leakage is likely to occur by reflecting the light source light incident during operation. . Therefore, if no countermeasure is taken, the contrast of the display image is lowered due to light leakage, and there is a possibility that the image quality is lowered.

  However, in the electro-optical device according to this embodiment, the antireflection layer 220 is formed so as to cover the end surfaces of the first layer 211 and the second layer 212. Therefore, reflection of light at the end surfaces of the first layer 211 and the second layer 212 is suppressed, and occurrence of light leakage can be reduced. The antireflection layer 220 according to the present embodiment is formed so as to cover all the end surfaces of the first layer 211 and the second layer 212, but covers the end surfaces only at a portion where light leakage is likely to occur. It may be formed.

  In FIG. 6, the first layer 211 and the second layer 212 are formed in the same region by patterning together after the two films constituting each of them are formed. Specifically, after the second layer 212 is formed over the first layer 211, the first layer 211 and the second layer 212 are etched together. After that, the antireflection layer 220 is formed on the first layer 211 and the second layer 212, whereby the structure shown in FIG. 5 is obtained.

  As shown in FIG. 7, if the second layer 212 is not formed on the first layer 211, the first layer 211 made of aluminum or the like, and titanium nitride or the like are used. An oxide-based insulating film is formed at the interface with the antireflection film 220, which may increase the resistance value of the first relay layer 200 as a whole.

  On the other hand, since the second layer 212 is formed on the first layer 211 as shown in FIG. 6, the electro-optical device according to this embodiment can prevent the formation of the oxide film described above. it can. Accordingly, it is possible to prevent the resistance from being increased due to the formation of the oxide film. Therefore, the quality of the display image can be further improved.

  The second layer 212 also functions as a protective layer when the upper layer contact hole 81 is formed. Specifically, as shown in FIG. 5, the contact hole 81 only needs to be formed so that the antireflection film 220 or the second layer 212 is exposed, so that a margin for formation can be ensured. That is, high accuracy is not required for etching when the contact hole 81 is formed.

  As described above, according to the electro-optical device according to this embodiment, the first layer 211 is covered with the second layer 212, so that the device can be easily manufactured. High resistance can be prevented. Furthermore, by covering the end surfaces of the first layer 211 and the second layer 212 with an antireflection film, occurrence of light leakage in the display region can be suppressed. As a result, a high-quality image display having a high contrast ratio can be realized.

  In the present embodiment, the first relay layer 200 (see FIG. 4) has been described as an example. However, the above-described effects can be obtained also in the second relay layer 400 configured similarly. In addition, conductive layers other than the first relay layer 200 and the second relay layer 400 (for example, the scanning lines 3a and the data lines 6a) and the like can have a similar layer structure.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 8 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 8, a lamp unit 1102 made of a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 8, a mobile personal computer, a mobile phone, an LCD TV, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, an electronic device Examples include notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices with touch panels. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

  3a ... Scanning line, 6a ... Data line, 9a ... Pixel electrode, 10 ... TFT array substrate, 10a ... Image display area, 20 ... Counter substrate, 30 ... TFT, 40 ... Interlayer insulating film, 50 ... Liquid crystal layer, 70 ... Storage Capacity, 81, 82, 83, 84, 85 ... contact hole, 90 ... third relay layer, 200 ... first relay layer, 210 ... conductive layer, 211 ... first layer, 212 ... second layer, 220 ... Antireflection layer, 400 ... second relay layer, 410 ... conductive layer, 420 ... antireflection layer

Claims (6)

A pixel electrode;
A conductive layer disposed in a pixel region in which the pixel electrodes are arranged;
A protective layer disposed to face the substrate across the conductive layer;
An antireflection film including a material having a light reflectance lower than that of the conductive layer, and disposed so as to face the substrate with the conductive layer and the protective layer interposed therebetween;
An insulating film disposed to face the substrate across the antireflection film;
A contact hole formed at a position overlapping the conductive layer and the protective film of the insulating film when viewed from the direction from the insulating film toward the substrate;
Including
The antireflection film at least partially covers an end face of the conductive layer and an end face of the protective layer ;
The electro-optical device , wherein the contact hole overlaps with the data line when viewed from the direction . An electrode disposed in the contact hole;
The electro-optical device according to claim 1, wherein the electrode is electrically connected to the antireflection film or the protective layer.   The electro-optical device according to claim 1, wherein an end face of the conductive layer and an end face of the protective layer are continuous.   4. The conductive layer and the protective layer are simultaneously patterned, and are formed in the same region as viewed from the direction from the insulating film toward the substrate. The electro-optical device according to Item. The conductive layer has a first portion extending in a first direction and a second portion extending in a second direction intersecting the first direction;
The antireflection film is formed so as to cover end surfaces of the conductive layer and the protective layer in an intersecting region where the first portion and the second portion intersect each other. The electro-optical device according to any one of the above.   An electronic apparatus comprising the electro-optical device according to claim 1.

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