JP2005333042A - Electrooptical display device and method for manufacturing same - Google Patents
Electrooptical display device and method for manufacturing same Download PDFInfo
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Abstract
Description
本発明は電気光学表示装置の製造方法及び電気光学表示装置に関する。詳しくは、低リーク電流特性の表示素子部と、高い電子・正孔移動度を有する周辺回路部を同一のＳＯＩ層内に形成することによって、高い電子・正孔移動度を有し、高精細で高輝度の電気光学表示装置の製造方法及び電気光学表示装置に係るものである。 The present invention relates to a method for manufacturing an electro-optical display device and an electro-optical display device. Specifically, by forming a display element portion with low leakage current characteristics and a peripheral circuit portion having high electron / hole mobility in the same SOI layer, it has high electron / hole mobility and high definition. The present invention relates to a method for manufacturing a high-brightness electro-optical display device and an electro-optical display device.
透過型高温多結晶シリコン（以下、「ポリＳｉ」と称す。）ＴＦＴ（Thin Film Transistor）ＬＣＤの場合、石英ガラスに減圧ＣＶＤ（Chemical Vapor Deposition）等により微結晶Ｓｉ薄膜を形成し、さらにＳｉイオン注入によりアモルファスＳｉ化した後に、例えば６２０℃１２時間の固相成長法により大粒径ポリＳｉ薄膜を形成し、その膜にＬＣＤの表示素子および周辺回路などを形成している。 In the case of transmissive high-temperature polycrystalline silicon (hereinafter referred to as “poly-Si”) TFT (Thin Film Transistor) LCD, a microcrystalline Si thin film is formed on quartz glass by low pressure CVD (Chemical Vapor Deposition) etc. After the amorphous Si is formed by implantation, a large grain poly Si thin film is formed by, for example, a solid phase growth method at 620 ° C. for 12 hours, and an LCD display element and peripheral circuits are formed on the film.
また、低温ポリＳｉＴＦＴの透過型、半透過型または反射型ＬＣＤあるいは有機ＥＬディスプレイ（以下「有機ＥＬ」と称す。）の場合、ほうけい酸ガラスやアルミノけい酸ガラスなどの低歪点ガラスにプラズマＣＶＤ等によりアモルファスＳｉ薄膜を形成し、エキシマレーザーアニール（ＥＬＡ）による結晶化で大粒径ポリＳｉ薄膜を形成し、その膜にＬＣＤの表示素子および周辺回路、または有機ＥＬの表示素子および周辺回路を形成している。 In the case of a low-temperature poly-Si TFT transmissive, transflective or reflective LCD or organic EL display (hereinafter referred to as “organic EL”), plasma is applied to low strain point glass such as borosilicate glass or aluminosilicate glass. An amorphous Si thin film is formed by CVD or the like, and a large grain poly Si thin film is formed by crystallization by excimer laser annealing (ELA). An LCD display element and a peripheral circuit, or an organic EL display element and a peripheral circuit are formed on the film. Is forming.
ところが、これらの高温ポリＳｉＴＦＴＬＣＤ、低温ポリＳｉＴＦＴＬＣＤまたは有機ＥＬの場合、単結晶Ｓｉに比べて電子・正孔移動度が高くないポリＳｉ薄膜上に、ＬＣＤまたは有機ＥＬの周辺回路を形成するため、デバイス特性、高速動作性や消費電力などが問題となる。 However, in the case of these high-temperature poly-Si TFT LCD, low-temperature poly-Si TFT LCD, or organic EL, an LCD or organic EL peripheral circuit is formed on a poly-Si thin film that does not have high electron / hole mobility compared to single crystal Si. Device characteristics, high-speed operability, power consumption, etc. are problems.
近年、ＬＣＯＳ（Liquid Crystal On Silicon）と呼ばれる反射型ＬＣＤが、プロジェクタ等に採用されている。これは単結晶Ｓｉの高い電子・正孔移動度を利用したものである。ＬＣＯＳは、汎用ＭＯＳＬＳＩ技術によって単結晶Ｓｉ基板表面に表示素子および周辺駆動回路のみならず、映像信号処理回路やメモリ回路等の機能を取り込んだものであり、高輝度、高精細、高機能という特徴を有する。 In recent years, a reflective LCD called LCOS (Liquid Crystal On Silicon) has been adopted for projectors and the like. This utilizes the high electron / hole mobility of single crystal Si. LCOS incorporates functions such as video signal processing circuits and memory circuits as well as display elements and peripheral drive circuits on the surface of a single crystal Si substrate using general-purpose MOSLSI technology, and features high brightness, high definition, and high functionality. Have
ところが、ＬＣＯＳは、強い入射光の漏れによるＴＦＴリーク電流が画質および信頼性に問題を起こしやすい。そのため、漏れ光対策によって、加工工数増大、歩留および生産性低下をもたらしている。そこで、ＳＯＩ（Silicon On Insulator）基板の採用が考えられる。 However, in LCOS, TFT leakage current due to strong incident light leakage tends to cause problems in image quality and reliability. For this reason, countermeasures against light leakage increase processing man-hours, yield, and productivity. Therefore, it is conceivable to employ an SOI (Silicon On Insulator) substrate.
ここで、ＳＯＩ基板の製法として、キャノン社のＥＬＴＲＡＮ（商標）技術、仏Ｓｏｉｔｅｃ社のＳＭＡＲＴ ＣＵＴ（商標）技術や、ＳＩＭＯＸ（Separation by IMplanted OXygen）技術などが知られている。 Here, as an SOI substrate manufacturing method, Canon's ELTRAN (trademark) technology, French Soitec's SMART CUT (trademark) technology, SIMOX (Separation by IMplanted OXygen) technology, and the like are known.
例えば、ＥＬＴＲＡＮ法では、特許文献１に開示されているように、まずシードＳｉウエーハ表面を陽極酸化により直径０．０１μｍの極細の穴が無数に空いた多孔質のスポンジ構造に化学処理し、この多孔質Ｓｉ上に単結晶Ｓｉ層をエピタキシャル成長させる。さらに、この単結晶Ｓｉ層表面を熱酸化して絶縁膜を形成し、ハンドルＳｉウエーハと貼り合せた後、ウオータージェットにより多孔質層のところでシードＳｉウエーハを分離する。その後、超高選択エッチングでハンドルＳｉウエーハ上に残された多孔質層を除去する。最後に、水素アニール処理で表面を平滑化することでＳＯＩ基板を作製する。また、特許文献２には、シードＳｉウエーハの分離を、多孔質層の引っ張り剥離により行うことが記載されている。
For example, in the ELTRAN method, as disclosed in
一方、ＳＭＡＲＴ ＣＵＴ法では、特許文献３，４，５，６などに記載のように、Ｓｉウエーハ表面から所定の深さの所に高濃度水素イオン注入層を形成し、別に熱酸化して絶縁膜を形成したＳｉウエーハと貼り合せした後、剥離熱処理して高濃度水素イオン注入領域で剥離し、最後に水素アニール処理で表面を平滑化することでＳＯＩ基板を作製する。 On the other hand, in the SMART CUT method, as described in Patent Documents 3, 4, 5, 6, etc., a high-concentration hydrogen ion implantation layer is formed at a predetermined depth from the Si wafer surface, and is separately thermally oxidized for insulation. After bonding to the Si wafer on which the film is formed, peeling heat treatment is performed to peel off in the high concentration hydrogen ion implantation region, and finally the surface is smoothed by hydrogen annealing treatment to produce an SOI substrate.
ここで、特許文献１などに記載のＥＬＴＲＡＮ法のポイントは、ウオータージェットにより多孔質層のところでシードＳｉウエーハを分離することであるが、ウエーハサイズが大きくなると分離しにくくなるため、割れ、欠け、クラックの発生などにより歩留および品質が問題となりやすい。また、特許文献２に記載の方法では、多孔質層の引っ張り剥離を行うため、割れ、欠け、クラックの発生などにより歩留および品質が問題となりやすい。
Here, the point of the ELTRAN method described in
また、特許文献３，４，５，６などに記載のＳＭＡＲＴ ＣＵＴ法のポイントは、剥離アニールにより、水素微小気泡内の圧力作用および結晶再配列作用で高濃度水素イオン注入層に歪みを発生させ、両基板を引張り剥離することであるが、ウエーハサイズが大きくなると分離しにくくなるため、割れ、欠けやクラックの発生などで歩留および品質が問題となりやすい。 In addition, the point of the SMART CUT method described in Patent Documents 3, 4, 5, 6 and the like is that, by exfoliation annealing, strain is generated in the high-concentration hydrogen ion-implanted layer by the pressure action and crystal rearrangement action in the hydrogen microbubbles. The two substrates are pulled and peeled, but when the wafer size is increased, it becomes difficult to separate them, so that the yield and quality are liable to be problematic due to the occurrence of cracks, chips and cracks.
また、単結晶シリコンＳｉ基板が光透過しないためにＳＯＩ基板の採用は、反射型ＬＣＤ及び上面発光型有機ＥＬに限定されてしまう。 In addition, since the single crystal silicon Si substrate does not transmit light, the use of the SOI substrate is limited to the reflective LCD and the top emission organic EL.
なお、ＥＬＴＲＡＮ法によってその表面に多孔質Ｓｉ層を介して単結晶Ｓｉ層を形成した単結晶Ｓｉ基板、またはＳＭＡＲＴ ＣＵＴ法によってその表面に単結晶Ｓｉ層（高濃度水素イオン注入層）を形成した単結晶Ｓｉ基板と石英ガラス基板を貼り合せたＳＯＩ基板による透過型ＬＣＤの開発が行われているが、石英ガラス基板表面には酸化セリウム等の研磨剤による研磨のマイクロクラックが無数に存在してナノメーターレベルの凹凸が大きいので、貼り合せ不良、熱ストレスでの単結晶Ｓｉ層への歪み応力等によるＴＦＴ特性劣化等が問題となり易い。更に、単結晶ＳｉのＳＯＩ基板層に周辺回路を形成しているが、更なる高性能化、高集積化が求められている。 A single-crystal Si substrate having a single-crystal Si layer formed on its surface via a porous Si layer by the ELTRAN method, or a single-crystal Si layer (high-concentration hydrogen ion implanted layer) was formed on the surface by the SMART CUT method. A transmissive LCD using an SOI substrate in which a single crystal Si substrate and a quartz glass substrate are bonded together has been developed. However, there are innumerable microcracks polished with an abrasive such as cerium oxide on the surface of the quartz glass substrate. Since the nanometer level unevenness is large, TFT characteristic deterioration due to bonding failure, strain stress on the single crystal Si layer due to thermal stress, etc. is likely to be a problem. Further, a peripheral circuit is formed on a single crystal Si SOI substrate layer, and further higher performance and higher integration are required.
本発明は、以上の点に鑑みて創案されたものであって、単結晶Ｓｉの高い電子・正孔移動度を有し、高精細で高輝度の電気光学表示装置、特にプロジェクタ用透過型ＬＣＤの製造方法及び電気光学表示装置を提供することを目的とするものである。 The present invention was devised in view of the above points, and has a high electron / hole mobility of single crystal Si, and a high-definition and high-brightness electro-optical display device, particularly a transmissive LCD for projectors An object of the present invention is to provide a manufacturing method and an electro-optical display device.
上記の目的を達成するために、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離する工程と、前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In order to achieve the above object, a method of manufacturing an electro-optic display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and the porous semiconductor layer on the seed substrate. A step of forming a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer via a step, a step of etching optical polishing damage on the surface of a support substrate made of a glass material to form a transparent insulating layer, and the seed Bonding the first single crystal semiconductor layer of the substrate or the single crystal semiconductor layer to which strain is applied and the transparent insulating layer of the supporting substrate; separating the seed substrate from the porous semiconductor layer; and the porous semiconductor Etching the display layer of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to expose the transparent insulating layer; and Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in a peripheral circuit region from a polycrystalline semiconductor layer or an amorphous semiconductor layer having a controlled crystal grain size; Forming a display element portion in a crystalline semiconductor layer or an amorphous semiconductor layer, and forming a peripheral circuit portion in a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第１の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離する工程と、前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、露出した前記第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of etching optical polishing damage on the surface of a support substrate made of a glass material to form a first transparent insulating layer, Bonding the single crystal semiconductor layer or the strain-applying single crystal semiconductor layer and the first transparent insulating layer of the support substrate, separating the seed substrate from the porous semiconductor layer, and the porous semiconductor layer And etching the display residue of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the first transparent insulating layer; Forming a second transparent insulating layer through a light-shielding metal layer having a pixel opening region in one transparent insulating layer, and a polycrystalline semiconductor layer or an amorphous semiconductor layer having a crystal grain size controlled in the display region A step of forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region and a crystal grain size controlled on the second transparent insulating layer through the light-shielding metal layer in the display region. Forming a display element portion in a crystalline semiconductor layer or an amorphous semiconductor layer, and forming a peripheral circuit portion in a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離する工程と、前記多孔質半導体層の分離残りをエッチングし、第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of etching optical polishing damage on the surface of a support substrate made of a glass material to form a transparent insulating layer, and a first single crystal of the seed substrate A step of bonding a semiconductor layer or a strain-applied single crystal semiconductor layer and a transparent insulating layer of the support substrate; a step of separating the seed substrate from the porous semiconductor layer; and etching the separation residue of the porous semiconductor layer. Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer over the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer, and a second single crystal half layer in the display region The display element portion to the body layer or strained monocrystalline semiconductor layer, comprising forming a peripheral circuit section in the second single crystal semiconductor layer or strained monocrystalline semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板に多孔質Ｓｉ層及び第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、この第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と、例えば石英ガラスの支持基板表面の光学研磨ダメージをエッチングして形成した酸化シリコン（ＳｉＯ２）層またはＳｉＯ２と窒化シリコン（Ｓｉ３Ｎ４またはＳｉＮｘ、以降はＳｉＮｘと称する）とＳｉＯ２の積層層または酸窒化シリコン（ＳｉＯＮ）層からなる第１の透明絶縁層を貼り合わせ、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより種子基板を多孔質Ｓｉ層から分離し、第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第１の透明絶縁層を露出した後に、露出した第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成し、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪み単結晶半導体層の歪みＳｉ層を形成し、表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a porous Si layer and a first single crystal Si layer or a strained SiGe layer are formed on a seed substrate made of single crystal Si, and the first single crystal Si layer or SiGe layer, for example, A silicon oxide (SiO 2 ) layer or SiO 2 and silicon nitride (Si3N4 or SiNx, hereinafter referred to as SiNx) and SiO 2 layer or silicon oxynitride formed by etching optical polishing damage on the support substrate surface of quartz glass The first transparent insulating layer made of (SiON) layer is bonded, and the seed substrate is formed by a high pressure fluid jet spraying peeling method such as water jet, air jet, water air jet, laser processing peeling method or laser water jet processing peeling method. Separated from the porous Si layer, the first single crystal Si layer or SiG After the display region of the e layer is etched to expose the first transparent insulating layer, the second transparent insulating layer is formed through a light-shielding metal layer having a pixel opening region in the exposed first transparent insulating layer. For example, a polycrystalline Si layer is formed in the display region by, for example, CVD Si epitaxial growth, and a high-crystalline single crystal Si layer or a strained Si crystal layer of a strained single crystal semiconductor layer is formed in the peripheral circuit region. In order to form a display element portion in a polycrystalline Si layer with a controlled crystal grain size on the second transparent insulating layer and a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region The display element part with low leakage current characteristics by the light-shielding metal layer and the LCD peripheral circuit part including the system LSI with high electron / hole mobility and high driving ability can be formed in the same SOI layer, and by strong incident light Display element Lee Current is reduced, high-definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板の所定深さにイオン注入層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、該透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、前記種子基板のイオン注入層に歪部形成する工程と、前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出させる工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a support substrate surface made of a glass material. Etching the optical polishing damage to form a transparent insulating layer, bonding the seed substrate and the support substrate through the transparent insulating layer, and forming a strained portion in the ion implantation layer of the seed substrate Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single-crystal semiconductor layer or a strain-applied single-crystal semiconductor layer; Etching the display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to expose the transparent insulating layer; and a polycrystalline semiconductor having a crystal grain size controlled in the display region Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a polycrystalline semiconductor layer or an amorphous semiconductor in which the crystal grain size is controlled in the display region Forming a display element portion in the layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板の所定深さにイオン注入層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、剥離アニール等により前記種子基板のイオン注入層に歪み発生させる工程と、前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングする工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、露出した前記第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a support substrate surface made of a glass material. Etching the optical polishing damage to form a first transparent insulating layer; bonding the seed substrate to the support substrate through the first transparent insulating layer; Generating a strain in the ion-implanted layer, separating the seed substrate from the strained portion of the ion-implanted layer, etching the separation residue of the ion-implanted layer, and applying the first single crystal semiconductor layer or strain Etching the display region of the single crystal semiconductor layer to expose the first transparent insulating layer, and shielding the pixel opening region from the exposed first transparent insulating layer A step of forming a second transparent insulating layer through a metal layer, a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in a display region, and a second single crystal semiconductor layer or a strain in a peripheral circuit region. A step of forming a single crystal semiconductor layer, and a display element portion in a polycrystalline semiconductor layer or an amorphous semiconductor layer in which the crystal grain size is controlled on the second transparent insulating layer via the light-shielding metal layer of the display region, Forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板の所定深さにイオン注入層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、該透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、前記種子基板のイオン注入層に歪部形成する工程と、前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a support substrate surface made of a glass material. Etching the optical polishing damage to form a transparent insulating layer, bonding the seed substrate and the support substrate through the transparent insulating layer, and forming a strained portion in the ion implantation layer of the seed substrate Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single-crystal semiconductor layer or a strain-applied single-crystal semiconductor layer; Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer over the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; and a second single crystal semiconductor in the display region Or distortion single crystal semiconductor layer in the display element unit, comprising forming a peripheral circuit section in the second single crystal semiconductor layer or strained monocrystalline semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板の所定深さに例えば高濃度水素イオン注入層を形成し、例えば石英ガラスの支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層を形成し、この第１の透明絶縁層を介して種子基板及び支持基板を貼り合わせ、剥離アニールまたはレーザー加工またはレーザーウオータージェット加工などにより種子基板の高濃度水素イオン注入層に歪部を発生させ、種子基板を高濃度水素イオン注入層の歪部から分離し、形成した単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第１の透明絶縁層を露出した後に、露出した第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成し、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a high-concentration hydrogen ion implantation layer is formed at a predetermined depth of a seed substrate made of, for example, single-crystal Si or strain-applied SiGe, and optical polishing damage on the support substrate surface of, for example, quartz glass is etched to form SiO. 2 or a laminated film of SiO 2 , SiNx and SiO 2 or a first transparent insulating layer made of SiON, and a seed substrate and a supporting substrate are bonded together via the first transparent insulating layer, and peeling annealing or laser processing is performed. Alternatively, a strained portion is generated in the high concentration hydrogen ion implanted layer of the seed substrate by laser water jet processing, etc., and the seed substrate is separated from the strained portion of the high concentration hydrogen ion implanted layer, and the formed single crystal Si layer or SiGe layer is displayed. After the region is etched to expose the first transparent insulating layer, the pixel opening region is opened in the exposed first transparent insulating layer. A second transparent insulating layer is formed through the light-shielding metal layer, and a polycrystalline Si layer is formed in the display region, for example, by CVD Si epitaxial growth, and a highly crystalline single crystal Si layer or a strained Si layer is formed in the peripheral circuit region Then, the display element portion is formed on the polycrystalline Si layer with the crystal grain size controlled on the second transparent insulating layer via the light-shielding metal layer in the display region, and the highly crystalline single crystal Si layer or the strained Si layer in the peripheral circuit region. In order to form a peripheral circuit portion, a display element portion having a low leakage current characteristic by a light-shielding metal layer and an LCD peripheral circuit portion including a system LSI having high electron / hole mobility and high driving ability are the same SOI layer. The leakage current of the display element due to strong incident light is reduced, and a high-definition, high-brightness, high-function transmissive LCD can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、該透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a transparent insulating layer by etching optical polishing damage on a surface of a supporting substrate made of a glass material, and the supporting substrate through the transparent insulating layer. A step of bonding a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor; and processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer A step of etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the transparent insulating layer, and a polycrystalline semiconductor having a crystal grain size controlled in the display region Forming a second single-crystal semiconductor layer or a strained single-crystal semiconductor layer in the peripheral circuit region, and controlling the crystal grain size of the display region The display element portion to the conductor layer or the amorphous semiconductor layer, comprising forming a peripheral circuit section in the second single crystal semiconductor layer or strained monocrystalline semiconductor layer of the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、露出した前記第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a first transparent insulating layer by etching optical polishing damage on the surface of a support substrate made of a glass material, and the first transparent insulating layer. A step of bonding the support substrate to a seed substrate made of a single crystal semiconductor or a strain applied single crystal semiconductor, and processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or strain Exposing the first transparent insulating layer by etching the display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer; and exposing the first transparent insulating layer. A step of forming a second transparent insulating layer through a light-shielding metal layer having a pixel opening region opened in the first transparent insulating layer; Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region of the conductor layer, and controlling a crystal grain size on the second transparent insulating layer via the light-shielding metal layer in the display region Forming a display element portion in the polycrystalline semiconductor layer or the amorphous semiconductor layer, and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、該透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a transparent insulating layer by etching optical polishing damage on a surface of a supporting substrate made of a glass material, and the supporting substrate through the transparent insulating layer. A step of bonding a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor; and processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; and a second single crystal semiconductor layer in the display region. Forming a display element portion in the crystalline semiconductor layer or the strained single crystal semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層を形成し、この第１の透明絶縁層を介して支持基板と単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板を貼り合わせ、支持基板と貼り合せた種子基板を裏面加工例えば裏面研削及び化学的エッチングまたは裏面研削及び裏面研磨及び化学的エッチングし、形成した単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第１の透明絶縁層を露出した後に、露出した第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成し、例えばＣＶＤなどのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の遮光性金属層を介した第２の透明絶縁層上の多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, optical polishing damage on the surface of a support substrate made of quartz glass is etched to form a first transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or SiON. A support substrate and a seed substrate made of single crystal Si or strain applied SiGe are bonded together through a transparent insulating layer, and the seed substrate bonded to the support substrate is processed by backside processing such as backside grinding and chemical etching or backside grinding and backside. After polishing and chemical etching, the display area of the formed single crystal Si layer or SiGe layer is etched to expose the first transparent insulating layer, and then the pixel opening area is opened in the exposed first transparent insulating layer. A second transparent insulating layer is formed through the light-shielding metal layer, and is polycrystalline in the display region by Si epitaxial growth such as CVD. The i layer, the high crystalline single crystal Si layer or the strained Si layer is formed in the peripheral circuit region, and the display element portion is formed on the polycrystalline Si layer on the second transparent insulating layer through the light shielding metal layer in the display region. In order to form a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region, a display element portion having a low leakage current characteristic by a light-shielding metal layer and high electron / hole mobility An LCD peripheral circuit portion including a system LSI having a driving capability can be formed in the same SOI layer, a leakage current of the display element due to strong incident light is reduced, and a high-definition, high-brightness, high-function transmissive LCD can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層もしくは歪み印加の単結晶半導体層を露出させる工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer. Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer; and the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the support substrate transparent A step of bonding an insulating layer, a step of etching the seed substrate and the etching stopper layer bonded to the support substrate to expose the first single crystal semiconductor layer or a strain applied single crystal semiconductor layer, and Etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the transparent insulating layer; and controlling the crystal grain size in the display region Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, a polycrystalline semiconductor layer having a controlled crystal grain size in the display region, or Forming a display element portion in the amorphous semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第１の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、露出した前記第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer. Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer, the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the support Bonding the first transparent insulating layer of the substrate; etching the seed substrate and the etching stop layer bonded to the supporting substrate to form the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; Exposing the first transparent insulating layer by etching a display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer; and exposing the first transparent insulating layer. A step of forming a second transparent insulating layer through a light-shielding metal layer having a pixel opening region opened in the first transparent insulating layer, and a polycrystalline semiconductor layer or an amorphous layer in which the crystal grain size is controlled in the display region Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a crystal grain size on the second transparent insulating layer through the light-shielding metal layer in the display region Forming a display element portion in the controlled polycrystalline semiconductor layer or amorphous semiconductor layer, and forming a peripheral circuit portion in the second single crystal semiconductor layer or strained single crystal semiconductor layer in the peripheral circuit region.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層もしくは歪み印加の単結晶半導体層を露出させる工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer. Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer; and the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the support substrate being transparent A step of bonding an insulating layer, a step of etching the seed substrate and the etching stopper layer bonded to the support substrate to expose the first single crystal semiconductor layer or a strain applied single crystal semiconductor layer, and A step of forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer over the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; The display element portion in the single crystal semiconductor layer or strained monocrystalline semiconductor layer, comprising forming a peripheral circuit section in the second single crystal semiconductor layer or strained monocrystalline semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板上に高濃度ｐ型単結晶Ｓｉ層のエッチング停止層を介して第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、この第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層を貼り合わせ、支持基板と貼り合せた種子基板及びエッチング停止層をエッチングして形成した第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第１の透明絶縁層を露出した後に、露出した第１の透明絶縁層に画素開口部領域が開口した遮光性金属層を介して第２の透明絶縁層を形成し、ＣＶＤなどのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪Ｓｉ層を形成し、表示領域の遮光性金属層を介した第２の透明絶縁層上の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a first single crystal Si layer or a strain-applied SiGe layer is formed on a seed substrate made of single crystal Si via an etching stop layer of a high-concentration p-type single crystal Si layer. of the single-crystal Si layer or SiGe layer, for example, the first transparent insulating layer optically polished damage of the supporting substrate surface of quartz glass by etching a laminated film or SiON of SiO 2 or SiO 2 and SiNx and SiO 2 the After exposing the first transparent insulating layer by etching the display area of the first single crystal Si layer or SiGe layer formed by etching the seed substrate and the etching stop layer bonded together and the support substrate, the exposure is performed. A second transparent insulating layer is formed on the first transparent insulating layer through a light-shielding metal layer having a pixel opening region opened, and Si epitaxial such as CVD is formed. A polycrystalline Si layer is formed in the display region depending on the length, a highly crystalline single crystal Si layer or a strained Si layer is formed in the peripheral circuit region, and crystal grains on the second transparent insulating layer through the light-shielding metal layer in the display region A display element having a low leakage current characteristic by a light-shielding metal layer in order to form a display element part in a polycrystalline Si layer whose diameter is controlled and a peripheral circuit part in a highly crystalline single crystal Si layer or a strained Si layer in a peripheral circuit area LCD peripheral circuit part including a system LSI with high electron / hole mobility and high driving capability can be formed in the same SOI layer, and the leakage current of the display element due to strong incident light is reduced, resulting in high definition and high A transmissive LCD with high brightness and high functionality can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離する工程と、前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of etching optical polishing damage on the surface of a supporting substrate made of a glass material to form a first transparent insulating layer, and the first transparent insulating layer Forming a light-shielding metal layer having a pixel opening region on the layer; forming a second transparent insulating layer on the light-shielding metal layer; and a first single crystal semiconductor layer of the seed substrate Alternatively, the step of bonding the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate, the step of separating the seed substrate from the porous semiconductor layer, and etching the separation residue of the porous semiconductor layer And said Etching the display region of the single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to expose the second transparent insulating layer; and a polycrystalline semiconductor layer having a crystal grain size controlled in the display region or an amorphous region A step of forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a display element portion in the polycrystalline semiconductor layer or amorphous semiconductor layer in which the crystal grain size is controlled in the display region Forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板に多孔質Ｓｉ層及び第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、種子基板の第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と支持基板の第２の透明絶縁層を貼り合わせ、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより種子基板を多孔質Ｓｉ層から分離し、第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、例えばＣＶＤなどのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, a porous Si layer and a first single crystal Si layer or a strained SiGe layer are formed on a seed substrate made of, for example, single crystal Si, and optical polishing damage on the surface of a support substrate made of, for example, quartz glass is etched. SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2, a first transparent insulating layer made of SiON, a light-shielding metal layer having a pixel opening region opened, and a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 A second transparent insulating layer made of a film or SiON is formed, and the first single crystal Si layer or SiGe layer of the seed substrate and the second transparent insulating layer of the support substrate are bonded together, and water jet, air jet, water air High pressure fluid jet jet peeling method such as jet, laser processing peeling method or laser water jet processing peeling method The seed substrate is separated from the porous Si layer by etching, the display region of the first single crystal Si layer or SiGe layer is etched to expose the second transparent insulating layer, and then the display region is formed by, for example, Si epitaxial growth such as CVD. A polycrystalline Si layer is formed on the peripheral circuit region, a highly crystalline single crystal Si layer or a strained Si layer is formed on the peripheral circuit region, a display element portion is formed on the polycrystalline Si layer whose crystal grain size is controlled in the display region, and a high crystal in the peripheral circuit region is formed In order to form a peripheral circuit part in a conductive single crystal Si layer or a strained Si layer, a display element part having a low leakage current characteristic by a light-shielding metal layer and a system LSI having high electron / hole mobility and high driving ability are included. The LCD peripheral circuit can be formed in the same SOI layer, the leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in the area other than the pixel opening area. By can be suppressed element leakage current of the display region and the peripheral circuit region, high definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離する工程と、前記多孔質半導体層の分離残りをエッチングし、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of etching optical polishing damage on the surface of a supporting substrate made of a glass material to form a first transparent insulating layer, and the first transparent insulating layer Forming a light-shielding metal layer having a pixel opening region on the layer; forming a second transparent insulating layer on the light-shielding metal layer; and a first single crystal semiconductor layer of the seed substrate Alternatively, the step of bonding the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate, the step of separating the seed substrate from the porous semiconductor layer, and etching the separation residue of the porous semiconductor layer And semiconductor Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer by epitaxial growth; and a second single crystal semiconductor layer in the display region or Forming a display element portion in the strained single crystal semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板に多孔質Ｓｉ層及び第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層、ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、種子基板の第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と支持基板の第２の透明絶縁層を貼り合わせ、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより種子基板を多孔質Ｓｉ層から分離し、例えばＣＶＤのＳｉエピタキシャル成長により第１の単結晶Ｓｉ層若しくはＳｉＧｅ層上に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成した後、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部と、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層にシステムＬＳＩを含むＬＣＤ周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a porous Si layer and a first single crystal Si layer or a strained SiGe layer are formed on a seed substrate made of single crystal Si, and optical polishing damage on the surface of a support substrate made of quartz glass, for example, is etched. SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2, a first transparent insulating layer made of SiON, a light-shielding metal layer having a pixel opening region opened, a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 A second transparent insulating layer made of a film or SiON is formed, and the first single crystal Si layer or SiGe layer of the seed substrate is bonded to the second transparent insulating layer of the supporting substrate, and water jet, air jet, water air High pressure fluid jet jet peeling method such as jet, laser processing peeling method or laser water jet processing peeling method The seed substrate is separated from the porous Si layer by, for example, a high crystalline single crystal Si layer or a strained Si layer is formed on the first single crystal Si layer or SiGe layer by CVD Si epitaxial growth, A light-shielding metal layer for forming a display element portion on a crystalline single crystal Si layer or a strained Si layer and an LCD peripheral circuit portion including a system LSI on a highly crystalline single crystal Si layer or strained Si layer in the peripheral circuit region The display element part with low leakage current characteristics by LCD and the LCD peripheral circuit part including the system LSI with high electron / hole mobility and high driving ability can be formed in the same SOI layer, and the leakage current of the display element due to strong incident light In addition, a light-shielding metal layer is formed in the area other than the pixel opening area. High resolution, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板の所定深さにイオン注入層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、該第２の透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、剥離アニール等により前記種子基板の前記イオン注入層に歪部発生させる工程と、前記種子基板を前記オン注入層の歪部から分離する工程と、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、形成した第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a support substrate surface made of a glass material Etching the optical polishing damage to form a first transparent insulating layer, forming a light-blocking metal layer having a pixel opening region on the first transparent insulating layer, and the light-blocking metal A step of forming a second transparent insulating layer on the layer; a step of bonding the seed substrate and the support substrate through the second transparent insulating layer; and an ion implantation layer of the seed substrate by peeling annealing or the like A step of generating a strained portion, a step of separating the seed substrate from the strained portion of the on-implanted layer, a first single crystal semiconductor layer or a strain-applied single crystal semiconductor by etching a separation residue of the ion implanted layer Etching the display region of the formed first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to expose the second transparent insulating layer, and controlling the crystal grain size in the display region Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and controlling the crystal grain size of the display region, Forming a display element portion in the amorphous semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板の所定深さに高濃度水素イオン注入層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、この第２の透明絶縁層を介して種子基板と支持基板を貼り合わせ、剥離アニールまたはレーザー加工またはレーザーウオータージェット加工などにより種子基板の高濃度水素イオン注入層に歪部発生させ、種子基板を高濃度水素イオン注入層の歪部から分離して形成した単結晶Ｓｉ層もしくはＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で高い駆動能力のシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, a high-concentration hydrogen ion implantation layer is formed at a predetermined depth of a seed substrate made of, for example, single crystal Si or strained SiGe, and optical polishing damage on the surface of a support substrate made of, for example, quartz glass is etched to form SiO. 2 or a laminated film of SiO 2 , SiNx and SiO 2, a first transparent insulating layer made of SiON, a light-shielding metal layer having an opening in a pixel opening region, and a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 or SiON A second transparent insulating layer is formed, the seed substrate and the support substrate are bonded through the second transparent insulating layer, and high concentration hydrogen ions of the seed substrate are formed by peeling annealing, laser processing, laser water jet processing, or the like. A single unit formed by generating a strained part in the implanted layer and separating the seed substrate from the strained part of the high concentration hydrogen ion implanted layer After the display region of the Si layer or SiGe layer is etched to expose the second transparent insulating layer, a polycrystalline Si layer is formed in the display region by, for example, CVD Si epitaxial growth, and a highly crystalline single crystal Si layer is formed in the peripheral circuit region. Alternatively, a strained Si layer is formed, and a display element portion is formed in a polycrystalline Si layer in which the crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region. The display element part with low leakage current characteristics by the light-shielding metal layer and the LCD peripheral circuit part including the system LSI with high electron / hole mobility and high driving ability can be formed in the same SOI layer, and by strong incident light Leakage current of the display element is reduced, and a light-shielding metal layer is formed in addition to the pixel opening area, suppressing element leakage current in the display area and peripheral circuit area due to reflected light Come, high definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板の所定深さにイオン注入層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、該第２の透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、剥離アニール等により前記種子基板の前記イオン注入層に歪部発生させる工程と、前記種子基板を前記イオン注入層の歪部から分離して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method for manufacturing an electro-optic display device according to the present invention includes a step of forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a support substrate surface made of a glass material Etching the optical polishing damage to form a first transparent insulating layer, forming a light-blocking metal layer having a pixel opening region on the first transparent insulating layer, and the light-blocking metal A step of forming a second transparent insulating layer on the layer; a step of bonding the seed substrate and the support substrate through the second transparent insulating layer; and an ion implantation layer of the seed substrate by peeling annealing or the like A step of generating a strained portion, a step of separating the seed substrate from the strained portion of the ion-implanted layer to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and semiconductor epitaxial growth. A step of forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; Forming a display element portion in the crystalline semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板の所定深さに高濃度水素イオン注入層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、この第２の透明絶縁層を介して種子基板と支持基板を貼り合わせ、剥離アニールまたはレーザー加工またはレーザーウオータージェット加工などにより前記種子基板の前記高濃度水素イオン注入層に歪部発生させて種子基板を高濃度水素イオン注入層の歪部から分離して第１の単結晶Ｓｉ層若しくはＳｉＧｅ層を形成し、半導体エピタキシャル成長により第１の単結晶Ｓｉ層若しくはＳｉＧｅ層上に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成した後に、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, a high-concentration hydrogen ion implantation layer is formed at a predetermined depth of a seed substrate made of, for example, single crystal Si or strained SiGe, and optical polishing damage on the surface of a support substrate made of, for example, quartz glass is etched to form SiO. 2 or a laminated film of SiO 2 , SiNx and SiO 2, a first transparent insulating layer made of SiON, a light-shielding metal layer having an opening in a pixel opening region, and a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 or SiON A second transparent insulating layer is formed, and the seed substrate and the support substrate are bonded together via the second transparent insulating layer, and the high concentration of the seed substrate is formed by peeling annealing, laser processing, laser water jet processing, or the like. A strained portion is generated in the hydrogen ion implanted layer to separate the seed substrate from the strained portion of the high concentration hydrogen ion implanted layer. After forming a single crystal Si layer or a SiGe layer and forming a high crystalline single crystal Si layer or a strained Si layer on the first single crystal Si layer or SiGe layer by semiconductor epitaxial growth, a high crystalline single crystal in the display region is formed. In order to form a display element portion in the Si layer or strained Si layer and a peripheral circuit portion in the highly crystalline single crystal Si layer or strained Si layer in the peripheral circuit region, a display element portion having a low leakage current characteristic by a light-shielding metal layer LCD peripheral circuit parts including system LSIs with high electron / hole mobility and high driving capability can be formed in the same SOI layer, reducing the leakage current of the display element due to strong incident light, and further the pixel opening A light-shielding metal layer is formed in addition to the area, which can suppress element leakage current in the display area and peripheral circuit area due to reflected light, and has high definition, high brightness, and high functionality transmission LC It is obtained.
また、本発明に係る電気光学表示装置の製造方法は、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、該第２の透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of etching optical polishing damage on the surface of a support substrate made of a glass material to form a first transparent insulating layer, and a step on the first transparent insulating layer. Forming a light-shielding metal layer having a pixel opening region opened thereon, a step of forming a second transparent insulating layer on the light-shielding metal layer, and the support substrate via the second transparent insulating layer Bonding a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor; and processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor Forming a layer; etching a display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to expose the second transparent insulating layer; and controlling a crystal grain size in the display region Polycrystalline half Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a polycrystalline semiconductor layer or an amorphous semiconductor in which the crystal grain size is controlled in the display region Forming a display element portion in the semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、この第２の透明絶縁層を介して支持基板と単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板を貼り合わせ、支持基板と貼り合せた種子基板を裏面加工、例えば裏面研削及び化学的エッチングまたは裏面研削及び裏面研磨及び化学的エッチングして形成した第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, the optical polishing damage on the surface of the support substrate made of quartz glass is etched to form a SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 or a first transparent insulating layer made of SiON, and a pixel opening region. A light-shielding metal layer having an opening, a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 , or a second transparent insulating layer made of SiON is formed, and the supporting substrate and the single crystal Si are formed through the second transparent insulating layer. Alternatively, a first substrate formed by pasting a seed substrate made of SiGe to which strain is applied, and performing back surface processing such as back surface grinding and chemical etching or back surface grinding and back surface polishing and chemical etching on the seed substrate bonded to the support substrate. After etching the display region of the crystalline Si layer or SiGe layer to expose the second transparent insulating layer, for example, CVD Si A polycrystalline Si layer is formed in the display region by the epitaxial growth, a highly crystalline single crystal Si layer or a strained Si layer is formed in the peripheral circuit region, and the display element portion is formed in the polycrystalline Si layer in which the crystal grain size is controlled in the display region. In order to form a peripheral circuit part in a highly crystalline single crystal Si layer or a strained Si layer in a circuit area, a display element part having a low leakage current characteristic by a light-shielding metal layer and a driving capability with high electron / hole mobility. LCD peripheral circuit part including high system LSI can be formed in the same SOI layer, leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in addition to the pixel opening area, The element leakage current in the display area and the peripheral circuit area due to the reflected light can be suppressed, and a high-definition, high-brightness, high-function transmissive LCD can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、該第２の透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of etching the optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer, and a step on the first transparent insulating layer. Forming a light-shielding metal layer having a pixel opening region opened thereon, a step of forming a second transparent insulating layer on the light-shielding metal layer, and the support substrate via the second transparent insulating layer Bonding a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor; and processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor Forming a layer; forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer by semiconductor epitaxial growth; and The display element portion to the second single crystal semiconductor layer or strained monocrystalline semiconductor layer of the display region, comprising forming a peripheral circuit section in the second single crystal semiconductor layer or strained monocrystalline semiconductor layer in the peripheral circuit region.
本製造方法では、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、この第２の透明絶縁層を介して支持基板と単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板を貼り合わせ、支持基板と貼り合せた種子基板を裏面加工、例えば裏面研削及び化学的エッチングまたは裏面研削及び裏面研磨及び化学的エッチングして形成した第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層上に例えばＣＶＤのＳｉエピタキシャル成長により高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成した後に、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, the optical polishing damage on the surface of the support substrate made of quartz glass is etched to form a SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 or a first transparent insulating layer made of SiON, and a pixel opening region. A light-shielding metal layer having an opening, a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 , or a second transparent insulating layer made of SiON is formed, and the supporting substrate and the single crystal Si are formed through the second transparent insulating layer. Alternatively, a first substrate formed by pasting a seed substrate made of SiGe to which strain is applied, and performing back surface processing such as back surface grinding and chemical etching or back surface grinding and back surface polishing and chemical etching on the seed substrate bonded to the support substrate. High crystalline single crystal Si layer by, for example, CVD Si epitaxial growth on crystalline Si layer or strained SiGe layer After forming the strained Si layer, the display element portion is provided on the high crystalline single crystal Si layer or strained Si layer in the display region, and the peripheral circuit portion is provided on the high crystalline single crystal Si layer or strained Si layer in the peripheral circuit region. In order to form, a display element portion having a low leakage current characteristic by a light-shielding metal layer and an LCD peripheral circuit portion including a system LSI having high electron / hole mobility and high driving capability can be formed in the same SOI layer. The leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in addition to the pixel opening area, which can suppress the element leakage current in the display area and the peripheral circuit area due to reflected light. A transmissive LCD with high definition, high brightness, and high functionality can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、前記支持基板を貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer; and forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer A step of forming a second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer of the seed substrate or a strain-applied single crystal semiconductor layer, and a second of the support substrate Bonding the transparent insulating layer; and etching the seed substrate and the etching stopper layer to which the support substrate is bonded to expose the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer. Etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the second transparent insulating layer; and a polycrystalline semiconductor layer having a crystal grain size controlled in the display region, or Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a polycrystalline semiconductor layer or an amorphous semiconductor layer in which the crystal grain size is controlled in the display region; The display element portion includes a step of forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板上に高濃度ｐ型単結晶Ｓｉ層のエッチング停止層を介して第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、種子基板の第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と支持基板の第２の透明絶縁層を貼り合わせ、支持基板を貼り合せた種子基板及びエッチング停止層をエッチングして形成した第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, a first single crystal Si layer or a strain-applied SiGe layer is formed on a seed substrate made of, for example, single crystal Si via an etching stop layer of a high-concentration p-type single crystal Si layer. Etching optical polishing damage on the surface of the supporting substrate made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or a first transparent insulating layer made of SiON, a light-shielding metal layer having an opening in a pixel opening region, and SiO 2 2 or a laminated film of SiO 2 , SiNx and SiO 2 or a second transparent insulating layer made of SiON, and a first single crystal Si layer or SiGe layer of the seed substrate and a second transparent insulating layer of the support substrate The display area of the first single crystal Si layer or SiGe layer formed by etching the seed substrate and the etching stop layer bonded to each other and the support substrate After the second transparent insulating layer is exposed by etching, a polycrystalline Si layer is formed in the display region by, for example, CVD Si epitaxial growth, and a high crystalline single crystal Si layer or a strained Si layer is formed in the peripheral circuit region. Low leakage current characteristics due to light-shielding metal layer to form display element part in polycrystalline Si layer with controlled crystal grain size and peripheral circuit part in highly crystalline single crystal Si layer or strained Si layer in peripheral circuit area Display element part and LCD peripheral circuit part including system LSI with high electron / hole mobility and high driving capability can be formed in the same SOI layer, reducing leakage current of display element due to strong incident light, In addition to the pixel opening area, a light-shielding metal layer is formed, and the element leakage current in the display area and peripheral circuit area due to reflected light can be suppressed, and high-definition, high-brightness, high-function transmissive LC It is obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、前記支持基板を貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer; and forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer A step of forming a second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer of the seed substrate or a strain-applied single crystal semiconductor layer, and a second of the support substrate Bonding the transparent insulating layer; and etching the seed substrate and the etching stopper layer to which the support substrate is bonded to expose the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer. Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer by semiconductor epitaxial growth; and a second single crystal semiconductor in the display region Forming a display element portion in the layer or the strained single crystal semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板上に高濃度ｐ型単結晶Ｓｉ層のエッチング停止層を介して第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、種子基板の第１の単結晶Ｓｉ層若しくはＳｉＧｅ層と支持基板の第２の透明絶縁層を貼り合わせ、支持基板を貼り合せた種子基板及びエッチング停止層をエッチングして第１の単結晶Ｓｉ層若しくはＳｉＧｅ層を露出させ、例えばＣＶＤのＳｉエピタキシャル成長により第１の単結晶Ｓｉ層若しくはＳｉＧｅ層上に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, a first single crystal Si layer or a strain-applied SiGe layer is formed on a seed substrate made of, for example, single crystal Si via an etching stop layer of a high-concentration p-type single crystal Si layer. Etching optical polishing damage on the surface of the support substrate made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or a first transparent insulating layer made of SiON, a light-shielding metal layer having a pixel opening region and SiO 2 2 or a laminated film of SiO 2 , SiNx and SiO 2 or a second transparent insulating layer made of SiON, and a first single crystal Si layer or SiGe layer of the seed substrate and a second transparent insulating layer of the support substrate Bonding, etching the seed substrate and the etching stop layer to which the support substrate is bonded to expose the first single crystal Si layer or SiGe layer, for example, C A high crystalline single crystal Si layer or a strained Si layer is formed on the first single crystal Si layer or SiGe layer by Si epitaxial growth of D, and a display element portion is formed on the high crystalline single crystal Si layer or strained Si layer in the display region. In order to form a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region, a display element portion having a low leakage current characteristic by a light shielding metal layer and a high electron / hole mobility LCD peripheral circuit part including system LSI with high driving capability can be formed in the same SOI layer, the leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in addition to the pixel opening area Therefore, element leakage current in the display area and the peripheral circuit area due to reflected light can be suppressed, and a high-definition, high-brightness, high-function transmissive LCD can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離して前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer, and the first Forming a light-shielding metal layer having a pixel opening region on the transparent insulating layer, forming a second transparent insulating layer on the light-shielding metal layer, and forming a surface of the supporting substrate made of a glass material. Etching the optical polishing damage to form a third transparent insulating layer; bonding the second transparent insulating layer of the seed substrate to the third transparent insulating layer of the supporting substrate; and the seed substrate. Separated from the porous semiconductor layer The step of exposing the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer, and etching the display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer to etch the first transparent A step of exposing the insulating layer, a step of forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region; The display element portion is formed in the polycrystalline semiconductor layer or the amorphous semiconductor layer in which the crystal grain size is controlled in the display region, and the peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. The process of carrying out is provided.
本製造方法では、例えば単結晶Ｓｉからなる種子基板に多孔質Ｓｉ層、第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層、ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層を形成し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより種子基板を多孔質Ｓｉ層から分離して前記第１の単結晶Ｓｉ層若しくはＳｉＧｅ層を露出させ、第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第１の透明絶縁層を露出した後に、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a seed substrate made of single crystal Si is made of a porous Si layer, a first single crystal Si layer, a strained SiGe layer, SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 , or SiON. A first transparent insulating layer, a light-shielding metal layer having an opening in the pixel opening region, and a second transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or SiON are formed. Etching optical polishing damage on the surface of the supporting substrate to form a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 or a third transparent insulating layer made of SiON, and supporting the second transparent insulating layer of the seed substrate High pressure fluid jets such as water jet, air jet, water air jet, etc. The seed substrate is separated from the porous Si layer by a peeling method, a laser processing peeling method, a laser water jet processing peeling method, or the like to expose the first single crystal Si layer or SiGe layer, and the first single crystal Si layer or After the display region of the SiGe layer is etched to expose the first transparent insulating layer, a polycrystalline Si layer is formed in the display region by, for example, CVD Si epitaxial growth, and a highly crystalline single crystal Si layer or a strained Si layer is formed in the peripheral circuit region. In order to form a display element portion in a polycrystalline Si layer with a controlled crystal grain size in the display region and a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region, Display element part with low leakage current characteristics due to the layer and LCD peripheral circuit part including system LSI with high electron / hole mobility and high driving ability are in the same SOI layer It can be formed, the leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in addition to the pixel opening area, suppressing the element leakage current in the display area and peripheral circuit area due to reflected light A high-definition, high-brightness, high-function transmissive LCD can be obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板に多孔質半導体層を形成する工程と、前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記種子基板を前記多孔質半導体層から分離して前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出する工程と、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optical display device according to the present invention includes a step of forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor, and a first single unit on the seed substrate via the porous semiconductor layer. A step of forming a crystalline semiconductor layer or a strain-applying single crystal semiconductor layer, a step of forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer, and the first Forming a light-shielding metal layer having a pixel opening region on the transparent insulating layer, forming a second transparent insulating layer on the light-shielding metal layer, and forming a surface of the supporting substrate made of a glass material. Etching the optical polishing damage to form a third transparent insulating layer; bonding the second transparent insulating layer of the seed substrate to the third transparent insulating layer of the supporting substrate; and the seed substrate. Separated from the porous semiconductor layer The step of exposing the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer, and the second single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer by semiconductor epitaxial growth Alternatively, a step of forming a strained single crystal semiconductor layer, a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region, and a second single crystal semiconductor layer or the strained single crystal semiconductor in the peripheral circuit region Forming a peripheral circuit portion in the layer;
本製造方法では、例えば単結晶Ｓｉからなる種子基板に多孔質Ｓｉ層、第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層、ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより種子基板を多孔質Ｓｉ層から分離して前記第１の単結晶Ｓｉ層若しくはＳｉＧｅ層を露出する工程と、例えばＣＶＤのＳｉエピタキシャル成長により第１の単結晶Ｓｉ層若しくはＳｉＧｅ層上に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成した後に、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a seed substrate made of single crystal Si is made of a porous Si layer, a first single crystal Si layer, a strained SiGe layer, SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 , or SiON. A first transparent insulating layer, a light-shielding metal layer having an opening in the pixel opening region, and a second transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or SiON are formed. The optical polishing damage on the surface of the supporting substrate is etched to form a third transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 or SiON, and the second transparent insulating layer of the seed substrate and the supporting substrate Laminating a third transparent insulating layer, high pressure fluid jet injection peeling such as water jet, air jet, water air jet, etc. Separating the seed substrate from the porous Si layer by laser processing peeling method or laser water jet processing peeling method, and exposing the first single crystal Si layer or SiGe layer; After forming a high crystalline single crystal Si layer or a strained Si layer on the single crystal Si layer or SiGe layer, the display element portion is placed on the high crystalline single crystal Si layer or the strained Si layer in the display region, and the peripheral circuit region In order to form a peripheral circuit part in a highly crystalline single crystal Si layer or a strained Si layer, a display element part having a low leakage current characteristic by a light-shielding metal layer and a system LSI having high electron / hole mobility and high driving ability LCD peripheral circuit part including the same can be formed in the same SOI layer, the leakage current of the display element due to strong incident light is reduced, and the pixel opening area And light-shielding metal layer is formed on the outer, it is possible to suppress the device leakage current in the display region and the peripheral circuit region by the reflected light, high definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optic display device according to the present invention includes a step of forming a first transparent insulating layer on a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor; Forming a light-shielding metal layer having a pixel opening area on the surface, forming a second transparent insulating layer on the light-shielding metal layer, and etching optical polishing damage on a support base surface made of a glass material Forming a third transparent insulating layer, bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate, and the seed bonded to the support substrate Processing the back surface of the substrate to form a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer, and etching the display region of the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer; Said first transparency A step of exposing the layer; a step of forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region; and a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region; Forming a display element portion in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in a display region, and forming a peripheral circuit portion in a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region Is provided.
本製造方法では、例えば単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板にＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層を形成し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、支持基板と貼り合せた種子基板を裏面加工、例えば裏面研削及び化学的エッチングまたは裏面研削及び裏面研磨及び化学的エッチングして形成した第１の単結晶Ｓｉ層若しくはＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a seed substrate made of single-crystal Si or strain-applied SiGe has a SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2, a first transparent insulating layer made of SiON, and a pixel opening region. A light-shielding metal layer and a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 or a second transparent insulating layer made of SiON are formed, and optical polishing damage on the surface of the support substrate made of, for example, quartz glass is etched to etch SiO 2. Alternatively, a laminated film of SiO 2 , SiNx and SiO 2 or a third transparent insulating layer made of SiON is formed, and the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the supporting substrate are bonded together, and the supporting substrate is bonded. Backside processing of the seed substrate bonded together with, for example, backside grinding and chemical etching or backside grinding and backside polishing and chemical etching After etching the display region of the first single-crystal Si layer or SiGe layer formed to expose the second transparent insulating layer, a polycrystalline Si layer is formed on the display region by, for example, CVD Si epitaxial growth, and the peripheral circuit region is formed. A high crystalline single crystal Si layer or a strained Si layer is formed, the display element portion is surrounded by a polycrystalline Si layer in which the crystal grain size is controlled in the display region, and the high crystal single crystal Si layer or strained Si layer in the peripheral circuit region is peripheral. In order to form a circuit portion, a display element portion having a low leakage current characteristic by a light-shielding metal layer and an LCD peripheral circuit portion including a system LSI having high electron / hole mobility and high driving ability are in the same SOI layer. The leakage current of the display element due to strong incident light is reduced, and a light-shielding metal layer is formed in addition to the pixel opening region, and the display region and the peripheral circuit region due to the reflected light are formed. It can suppress the child leakage current, high definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、半導体エピタキシャル成長により前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 In addition, the method for manufacturing an electro-optic display device according to the present invention includes a step of forming a first transparent insulating layer on a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor, and a step on the first transparent insulating layer. Forming a light-shielding metal layer having a pixel opening area on the surface, forming a second transparent insulating layer on the light-shielding metal layer, and etching optical polishing damage on the surface of the support substrate made of a glass material Forming a third transparent insulating layer, bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the supporting substrate, and the seed bonded to the supporting substrate Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer by processing the back surface of the substrate; and forming a second on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer by semiconductor epitaxial growth. of A step of forming a crystalline semiconductor layer or a strained single crystal semiconductor layer, a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region, and a second single crystal semiconductor layer or the strain in the peripheral circuit region Forming a peripheral circuit portion in the single crystal semiconductor layer;
本製造方法では、例えば単結晶Ｓｉ若しくは歪み印加のＳｉＧｅからなる種子基板にＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層を形成し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、支持基板と貼り合せた種子基板を裏面加工、例えば裏面研削及び化学的エッチングまたは裏面研削及び裏面研磨及び化学的エッチングして形成した第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に、例えばＣＶＤのＳｉエピタキシャル成長により高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成した後に、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, a seed substrate made of single-crystal Si or strain-applied SiGe has a SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2, a first transparent insulating layer made of SiON, and a pixel opening region. A light-shielding metal layer and a laminated film of SiO 2 or SiO 2 , SiNx and SiO 2 or a second transparent insulating layer made of SiON are formed, and optical polishing damage on the surface of the support substrate made of, for example, quartz glass is etched to etch SiO 2. Alternatively, a laminated film of SiO 2 , SiNx and SiO 2 or a third transparent insulating layer made of SiON is formed, and the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the supporting substrate are bonded together, and the supporting substrate is bonded. Backside processing of the seed substrate bonded together with, for example, backside grinding and chemical etching or backside grinding and backside polishing and chemical etching After forming a high crystalline single crystal Si layer or a strained Si layer by, for example, CVD Si epitaxial growth on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer formed in this manner, the high crystalline single crystal layer in the display region is formed. A display element having a low leakage current characteristic by a light-shielding metal layer in order to form a display element portion in a crystalline Si layer or a strained Si layer and a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region LCD peripheral circuit part including system LSI with high electron / hole mobility and high driving capability can be formed in the same SOI layer, and the leakage current of the display element due to strong incident light is reduced. A light-shielding metal layer is formed in the area other than the partial area, and the element leakage current in the display area and the peripheral circuit area due to reflected light can be suppressed, and high-definition, high-brightness, high-function transmissive LC It is obtained.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出する工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer. A step of forming a first transparent insulating layer on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a light-shielding metal having a pixel opening region opened on the first transparent insulating layer A step of forming a layer, a step of forming a second transparent insulating layer on the light-shielding metal layer, and etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer. A step of bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate, etching the seed substrate and the etching stop layer bonded to the support substrate, 1 single crystal semiconductor Exposing a layer or a strain-applied single crystal semiconductor layer; and etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the first transparent insulating layer; A step of forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region, and a crystal grain of the display region Forming a display element portion in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose diameter is controlled, and forming a peripheral circuit portion in a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板上に高濃度ｐ型単結晶Ｓｉ層のエッチング停止層、第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層、ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、例えば石英ガラスからなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層を形成し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、支持基板と貼り合せた種子基板及びエッチング停止層をエッチングして第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層を露出させ、第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層の表示領域をエッチングして第２の透明絶縁層を露出した後に、例えばＣＶＤのＳｉエピタキシャル成長により表示領域に多結晶Ｓｉ層を、周辺回路領域に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の結晶粒径制御した多結晶Ｓｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, an etching stop layer of a high-concentration p-type single crystal Si layer, a first single crystal Si layer or a strained SiGe layer, SiO 2 or SiO 2 and SiNx on a seed substrate made of single crystal Si. a first transparent insulating layer composed of a laminated film or SiON of SiO 2, the second transparent insulating pixel opening area is composed of a laminated film or SiON of the light-shielding metal layer and SiO 2 or SiO 2 and SiNx and SiO 2 having an opening Forming a layer and etching optical polishing damage on the surface of the support substrate made of, for example, quartz glass to form a third transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx, and SiO 2 or SiON, and a seed substrate The second transparent insulating layer and the third transparent insulating layer of the supporting substrate are bonded together, and the seed substrate and the etching stop layer bonded to the supporting substrate are etched. And exposing the first single crystal Si layer or strain-applying SiGe layer, and etching the display region of the first single crystal Si layer or strain-applying SiGe layer to expose the second transparent insulating layer. For example, a polycrystalline Si layer is formed in a display region by, for example, CVD Si epitaxial growth, a high crystalline single crystal Si layer or a strained Si layer is formed in a peripheral circuit region, and a display element is formed in a polycrystalline Si layer in which the crystal grain size is controlled in the display region In order to form a peripheral circuit portion in a highly crystalline single crystal Si layer or a strained Si layer in the peripheral circuit region, a display element portion having a low leakage current characteristic by a light-shielding metal layer and a high electron / hole mobility LCD peripheral circuit part including system LSI with high driving capability can be formed in the same SOI layer, leakage current of the display element due to strong incident light is reduced, and light is blocked in areas other than the pixel opening area Metal layer is formed, can be suppressed element leakage current of the display region and the peripheral circuit region by the reflected light, high definition, high brightness, transmissive LCD is obtained highly functional.
また、本発明に係る電気光学表示装置の製造方法は、単結晶半導体からなる種子基板上にエッチング停止層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、該遮光性金属層上に第２の透明絶縁層を形成する工程と、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングする工程と、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に半導体エピタキシャル成長により第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える。 The method of manufacturing an electro-optic display device according to the present invention includes a step of forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer on a seed substrate made of a single crystal semiconductor via an etching stop layer. A step of forming a first transparent insulating layer on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a light-shielding metal having a pixel opening region opened on the first transparent insulating layer A step of forming a layer, a step of forming a second transparent insulating layer on the light-shielding metal layer, and etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer. A step of bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate, and etching the seed substrate and the etching stop layer bonded to the support substrate; The first Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer by semiconductor epitaxial growth on the single crystal semiconductor layer or the strain-applied single crystal semiconductor layer; and a second single crystal semiconductor layer or a strained single crystal in the display region Forming a display element portion in the semiconductor layer and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region.
本製造方法では、例えば単結晶Ｓｉからなる種子基板上に高濃度ｐ型単結晶Ｓｉ層のエッチング停止層、第１の単結晶Ｓｉ層若しくは歪み印加のＳｉＧｅ層、ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第１の透明絶縁層、画素開口部領域が開口した遮光性金属層及びＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第２の透明絶縁層を形成し、ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングしてＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜またはＳｉＯＮからなる第３の透明絶縁層を形成し、種子基板の第２の透明絶縁層と支持基板の第３の透明絶縁層を貼り合わせ、支持基板と貼り合せた種子基板及びエッチング停止層をエッチングして第１の単結晶Ｓｉ層若しくは歪み印加ＳｉＧｅ層を露出させ、例えばＣＶＤのＳｉエピタキシャル成長により第１の単結晶Ｓｉ層若しくはＳｉＧｅ層上に高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層を形成し、表示領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に表示素子部を、周辺回路領域の高結晶性単結晶Ｓｉ層若しくは歪みＳｉ層に周辺回路部を形成するために、遮光性金属層による低リーク電流特性の表示素子部と、高い電子・正孔移動度で駆動能力の高いシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成でき、強い入射光による表示素子のリーク電流が低減し、更に、画素開口部領域以外に遮光性金属層が形成されており、反射光による表示領域及び周辺回路領域内の素子リーク電流を抑制でき、高精細、高輝度、高機能な透過型ＬＣＤが得られる。 In this manufacturing method, for example, an etching stop layer of a high-concentration p-type single crystal Si layer, a first single crystal Si layer or a strained SiGe layer, SiO 2 or SiO 2 and SiNx on a seed substrate made of single crystal Si. a first transparent insulating layer composed of a laminated film or SiON of SiO 2, the second transparent insulating pixel opening area is composed of a laminated film or SiON of the light-shielding metal layer and SiO 2 or SiO 2 and SiNx and SiO 2 having an opening Forming a layer, etching optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer made of SiO 2 or a laminated film of SiO 2 , SiNx and SiO 2 or SiON, and The second transparent insulating layer and the third transparent insulating layer of the supporting substrate are bonded together, and the seed substrate and the etching stop layer bonded to the supporting substrate are etched. Exposing the first single-crystal Si layer or the strain-applying SiGe layer, and forming a highly crystalline single-crystal Si layer or a strained Si layer on the first single-crystal Si layer or the SiGe layer by, for example, Si epitaxial growth of CVD, In order to form the display element portion in the high crystalline single crystal Si layer or the strained Si layer in the display region and the peripheral circuit portion in the high crystalline single crystal Si layer or the strained Si layer in the peripheral circuit region, the light shielding metal layer is used. A display element part with low leakage current characteristics and an LCD peripheral circuit part including a system LSI with high electron / hole mobility and high driving ability can be formed in the same SOI layer, and the leakage current of the display element due to strong incident light In addition, a light-shielding metal layer is formed in addition to the pixel opening area, and element leakage current in the display area and the peripheral circuit area due to reflected light can be suppressed. Time, sophisticated transmissive LCD is obtained.
また、本発明に係る電気光学表示装置の製造方法は、周辺回路部及び表示素子部を光遮蔽した遮光性金属層を有するガラス材料からなる支持基板上の複数の画素開口部をエッチングして任意の凹形状のマイクロレンズ部を複数形成し、高屈折率透明樹脂または無機系高屈折率透明膜によりマイクロレンズアレイ部を埋め込み、必要に応じて表面を光学研磨して表面平坦化して画素開口部上に透明画素電極を形成することで、入射側の集光レンズとして機能するマイクロレンズ部周囲に遮光膜形成したマイクロレンズ付き駆動基板（以下、ＴＦＴ基板とも称する。）と、全面に透明電極形成した対向基板で液晶を挟み込む、いわゆるシングルマイクロレンズ構造をした高輝度、高コントラスト、高機能の透過型ＬＣＤを形成することが出来る。
この時は、駆動基板側から光入射するが、画素開口部以外の表示素子部及び周辺回路部に遮光性金属層があるので、改めて個々のマイクロレンズ部周囲に遮光膜を形成する必要は無く、更に対向基板側のＴＦＴ部対応領域に遮光膜を形成する必要はないのでコストダウン出来る。
In addition, the method for manufacturing an electro-optic display device according to the present invention can arbitrarily etch a plurality of pixel openings on a supporting substrate made of a glass material having a light-shielding metal layer that shields light from the peripheral circuit portion and the display element portion. A plurality of concave microlens parts are formed, the microlens array part is embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film, and the surface is optically polished as necessary to flatten the surface to obtain pixel openings. By forming a transparent pixel electrode on the surface, a driving substrate with a microlens (hereinafter also referred to as a TFT substrate) in which a light shielding film is formed around a microlens portion functioning as a condensing lens on the incident side, and a transparent electrode is formed on the entire surface. A high-brightness, high-contrast, high-function transmissive LCD having a so-called single microlens structure in which liquid crystal is sandwiched between the opposite substrates can be formed.
At this time, light is incident from the drive substrate side, but since there is a light-shielding metal layer in the display element portion and the peripheral circuit portion other than the pixel opening portion, there is no need to form a light-shielding film around each microlens portion again. In addition, since it is not necessary to form a light shielding film in the TFT portion corresponding region on the counter substrate side, the cost can be reduced.
また、本発明に係る電気光学表示装置の製造方法は、遮光性金属層上に表示素子部及び周辺回路部が形成された駆動基板の複数の画素開口部をエッチングして任意の凹形状のマイクロレンズ部を複数形成し、高屈折率透明樹脂または無機系高屈折率透明膜によりマイクロレンズアレイ部を埋め込み、必要に応じて表面を光学研磨して表面平坦化して画素開口部上に透明画素電極を形成することでマイクロレンズ部周囲に遮光膜形成したマイクロレンズ付き駆動基板を形成し、更に前記駆動基板の画素開口部に相当する対向基板表面をエッチングして任意の凹形状のマイクロレンズ部を複数形成し、高屈折率透明樹脂または無機系高屈折率透明膜によりマイクロレンズアレイを形成し、必要に応じて表面を光学研磨して表面平坦化して全面に透明電極を形成することでマイクロレンズ部周囲に遮光膜形成したマイクロレンズ付き対向基板を形成し、入射側の集光レンズとして機能するマイクロレンズ付き対向基板と出射側のフィールドレンズとして機能するマイクロレンズ付き駆動基板、或いは入射側の集光レンズとして機能するマイクロレンズ付き駆動基板と出射側のフィールドレンズとして機能するマイクロレンズ付き対向基板で液晶を挟み込む、いわゆるデュアルマイクロレンズ構造をした高輝度、高コントラスト、高機能の透過型ＬＣＤを形成することが出来る。
これにより、コントラストを高めて画質向上させ、液晶温度上昇を低減させて高輝度化、長寿命化、高精細の透過型ＬＣＤを得ることが出来る。
In addition, the method for manufacturing an electro-optic display device according to the present invention includes etching a plurality of pixel openings of a driving substrate in which a display element portion and a peripheral circuit portion are formed on a light-shielding metal layer to form an arbitrary concave-shaped micro Form multiple lens parts, embed the microlens array part with high refractive index transparent resin or inorganic high refractive index transparent film, and optically polish the surface as necessary to make the surface flat and transparent pixel electrode on the pixel opening To form a driving substrate with a microlens having a light-shielding film around the microlens portion, and further etching the counter substrate surface corresponding to the pixel opening of the driving substrate to form an arbitrary concave-shaped microlens portion. A plurality of microlens arrays are formed by using a high refractive index transparent resin or an inorganic high refractive index transparent film. If necessary, the surface is optically polished to make the surface flat and transparent. By forming an electrode, a counter substrate with a microlens formed with a light-shielding film is formed around the microlens part, and a counter substrate with a microlens that functions as a condenser lens on the incident side and a microlens that functions as a field lens on the output side High brightness and high contrast with a so-called dual microlens structure, in which the liquid crystal is sandwiched between the drive substrate or the drive substrate with a microlens that functions as a condenser lens on the incident side and the counter substrate with a microlens that functions as a field lens on the exit side A high-functional transmissive LCD can be formed.
As a result, it is possible to improve the image quality by increasing the contrast and to reduce the temperature rise of the liquid crystal to obtain a high-luminance, long-life, high-definition transmissive LCD.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層と前記対向基板に形成された透明電極の間に電界を印加しない。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front No electric field is applied between the light-shielding metal layer and the counter substrate to form a transparent electrode.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層と前記対向基板に形成された透明電極の間に電界を印加しない。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal in between, wherein the light shielding metal layer and the transparent electrode formed on the counter substrate No electric field is applied between the two.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界若しくは交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front Any fixed field or an alternating electric field between the light-shielding metal layer and the counter substrate which is formed on the transparent electrode constantly applying.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界若しくは交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal in between, wherein the light shielding metal layer and the transparent electrode formed on the counter substrate Any fixed electric field between It is constantly applying an alternating electric field.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に電界を印加せず、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front A light-shielding metal layer is divided into a display area and a peripheral circuit area, and the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element section formed in the periphery of the pixel opening of the display area and the facing An electric field is not applied between the transparent electrode formed on the substrate and the light shielding metal layer in the entire peripheral circuit region, and between the transparent electrode formed on the counter substrate and the light shielding metal layer around the pixel opening in the display region. An arbitrary AC electric field is always applied to.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に電界を印加せず、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, wherein the light-shielding metal layer is divided into a display region and a peripheral circuit region. Formed on the counter substrate An electric field is applied between the light-shielding metal layer of the display element unit formed into an island in the periphery of the pixel opening in the display region and between the transparent electrode formed on the counter substrate and the light-shielding metal layer of the entire peripheral circuit region. An arbitrary AC electric field is always applied between the transparent electrode formed on the counter substrate and the light-shielding metal layer around the pixel opening in the display area without applying the voltage.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に任意の固定電界を常時印加すると共に、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front A light-shielding metal layer is divided into a display area and a peripheral circuit area, and the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element section formed in the periphery of the pixel opening of the display area and the facing An arbitrary fixed electric field is always applied between the transparent electrode formed on the substrate and the light-shielding metal layer of the entire peripheral circuit region, and the light shielding property around the transparent electrode formed on the counter substrate and the pixel opening in the display region An arbitrary AC electric field is always applied between the metal layers.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に任意の固定電界を常時印加すると共に、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, wherein the light-shielding metal layer is divided into a display region and a peripheral circuit region. Formed on the counter substrate Between the bright electrode and the light shielding metal layer of the display element portion formed into an island in the periphery of the pixel opening of the display region and between the transparent electrode formed on the counter substrate and the light shielding metal layer of the entire peripheral circuit region A fixed electric field is always applied, and an arbitrary AC electric field is always applied between the transparent electrode formed on the counter substrate and the light-shielding metal layer around the pixel opening in the display area.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と前記支持基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板上の表示領域の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front The light-shielding metal layer is divided into a display area and a peripheral circuit area, and the transparent electrode formed on the counter substrate is also divided into a display area and a peripheral circuit area. The transparent electrode in the display area of the counter substrate and the display on the support substrate Between the light-shielding metal layer of the islanded display element portion in the periphery of the pixel opening of the region and between the transparent electrode of the peripheral circuit region of the counter substrate and the light-shielding metal layer of the peripheral circuit region on the support substrate An arbitrary fixed electric field is always applied, and an arbitrary AC electric field is always applied between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer around the pixel opening in the display area on the support substrate.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と前記支持基板の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, wherein the light-shielding metal layer is divided into a display region and a peripheral circuit region. Formed on the counter substrate The bright electrode is also divided into a display area and a peripheral circuit area, between the transparent electrode of the display area of the counter substrate and the light-shielding metal layer of the display element portion formed into an island in the periphery of the pixel opening of the display area of the support substrate, and An arbitrary fixed electric field is always applied between the transparent electrode in the peripheral circuit region of the counter substrate and the light-shielding metal layer in the peripheral circuit region of the support substrate, and the transparent electrode in the display region of the counter substrate and the periphery of the pixel opening An arbitrary AC electric field is always applied between the light shielding metal layers.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、更に対向基板の表示領域内に表示素子部に対応した反射膜を形成し、対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front The light-shielding metal layer is divided into a display area and a peripheral circuit area, the transparent electrode formed on the counter substrate is also divided into a display area and a peripheral circuit area, and a reflection corresponding to the display element portion is also formed in the display area of the counter substrate. Forming a film, between the transparent electrode in the display region of the counter substrate and the light-shielding metal layer of the display element portion formed in the periphery of the pixel opening of the support substrate, and in the peripheral circuit region of the counter substrate and the transparent electrode An arbitrary fixed electric field is always applied between the light shielding metal layers in the peripheral circuit area of the support substrate, and between the transparent electrode in the display area of the counter substrate and the light shielding metal layer around the pixel opening of the support substrate. An arbitrary AC electric field is always applied to.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、更に対向基板の表示領域内に表示素子部に対応した反射膜を形成し、対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display device comprising a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, wherein the light-shielding metal layer is divided into a display region and a peripheral circuit region. Formed on the counter substrate The bright electrode is also divided into a display area and a peripheral circuit area, and a reflective film corresponding to the display element portion is formed in the display area of the counter substrate. An arbitrary fixed electric field is always applied between the light shielding metal layers of the display element portion formed into islands and between the transparent electrode in the peripheral circuit area of the counter substrate and the light shielding metal layer of the peripheral circuit area of the support substrate. In addition, an arbitrary AC electric field is constantly applied between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer around the pixel opening of the support substrate.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層は少なくとも画素開口部を形成して相互に層間絶縁した二重の遮光性金属層（上部の遮光性金属層及び下部の遮光性金属層）とし、上部の遮光性金属層上には絶縁層を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界を常時印加し、下部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. Optical display device, front The light-shielding metal layer is a double light-shielding metal layer (upper light-shielding metal layer and lower light-shielding metal layer) that forms at least a pixel opening and is insulated from each other. Forms a display element part and a peripheral circuit part via an insulating layer, and always applies an arbitrary fixed electric field between the upper light-shielding metal layer and the transparent electrode formed on the counter substrate, and the lower light-shielding metal. An arbitrary AC electric field is constantly applied between the layer and the transparent electrode formed on the counter substrate.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、前記遮光性金属層は少なくとも画素開口部を形成して相互に層間絶縁した二重の遮光性金属層（上部の遮光性金属層及び下部の遮光性金属層）とし、上部の遮光性金属層上には絶縁層を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界を常時印加し、下部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の交流電界を常時印加する。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, the electro-optical display device includes a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal in between, wherein the light-shielding metal layer forms at least a pixel opening and is mutually Double shield with interlayer insulation The light-shielding metal layer (upper light-shielding metal layer and lower light-shielding metal layer) is formed, and the display element part and the peripheral circuit part are formed on the upper light-shielding metal layer via an insulating layer, and the upper light-shielding metal layer An arbitrary fixed electric field is always applied between the layer and the transparent electrode formed on the counter substrate, and an arbitrary AC electric field is always applied between the lower light-shielding metal layer and the transparent electrode formed on the counter substrate. .
上記した本発明に係る電気光学表示装置は、ＴＮ（ツイストネマティック）モード液晶などのノーマルホワイト液晶状態において、表示素子部を含む画素開口部周囲及び周辺回路部全体にノーマルブラック液晶領域が常時形成されるようにすることで、画素間の横方向電界による液晶配向乱れ防止と画素間の光洩れ防止が出来るので、入射光及び反射光の洩れ光によるＴＦＴリーク電流抑制、コントラスト向上を図ることができる。
このように、液晶のノーマルブラック領域が表示部の画素開口部周囲及び周辺回路部全体を覆うことで洩れ光防止できるので、ＴＦＴ洩れ光対策プロセス低減によるＴＦＴプロセスのスリム化、例えばＴＦＴフォトマスク枚数削減、ＣＭＰ工程削減などでのコストダウンが実現する。
In the electro-optical display device according to the present invention, in a normal white liquid crystal state such as a TN (twisted nematic) mode liquid crystal, a normal black liquid crystal region is always formed around the pixel opening including the display element portion and the entire peripheral circuit portion. By doing so, it is possible to prevent the liquid crystal alignment disturbance due to the horizontal electric field between the pixels and the light leakage between the pixels, so that it is possible to suppress the TFT leakage current and improve the contrast due to the leakage light of the incident light and the reflected light. .
As described above, since the normal black region of the liquid crystal covers the periphery of the pixel opening of the display portion and the entire peripheral circuit portion, leakage light can be prevented, so that the TFT process can be reduced by reducing the TFT leakage light countermeasure process, for example, the number of TFT photomasks. Reduction in costs due to reduction and CMP process reduction.
さらに、下記のように電界印加方法を適正化することで、表示領域の液晶焼き付き等の液晶動作不具合を防止し、表示部及び周辺回路領域内のＴＦＴのゲート電位変動による特性悪化を防止し、ノーマルブラック液晶化用回路の負荷低減を図ることが出来る。 Furthermore, by optimizing the electric field application method as described below, it prevents liquid crystal operation defects such as liquid crystal burn-in in the display area, prevents deterioration in characteristics due to gate potential fluctuations of TFTs in the display part and the peripheral circuit area, The load on the normal black liquid crystal circuit can be reduced.
[１]駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、対向基板の共通透明電極と駆動基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の共通透明電極と駆動基板上の周辺回路領域全体の遮光性金属層の間に電界を印加せず、対向基板の共通透明電極と駆動基板上の表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。
[２]駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、対向基板の共通透明電極と駆動基板上の周辺回路領域の遮光性金属層間及び画素開口部周囲内のアイランド化した表示素子部の遮光性金属層間には任意の固定電界を印加し、対向基板の共通透明電極と駆動基板上の画素開口部周囲の遮光性金属層間には任意の交流電界を印加する。
この時に、ノーマルブラック液晶化用回路の負荷低減のために、対向基板の共通透明電極と駆動基板上の周辺回路領域の遮光性金属層間には必ずしも固定電界を印加しなくてもよい。
[３]駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、それに対応する対向基板の透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と駆動基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の周辺回路領域の透明電極と駆動基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を印加し、対向基板の表示領域の透明電極と駆動基板上の表示領域の画素開口部周囲の遮光性金属層の間には任意の交流電界を印加する。
この時に、ノーマルブラック液晶化用回路の負荷低減のために、対向基板の周辺回路領域の透明電極と駆動基板の周辺回路領域の遮光性金属層間には必ずしも固定電界を印加しなくてもよい。
[４]駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、それに対応する対向基板の透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域内に表示素子部に対応したブラックマスクの反射膜を形成し、対向基板の表示領域の透明電極と駆動基板上の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の周辺回路領域の透明電極と駆動基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を印加し、対向基板の表示領域の透明電極と駆動基板上の画素開口部周囲の遮光性金属層の間には任意の交流電界を印加する。
この時に、ノーマルブラック液晶化用回路の負荷低減のために、対向基板の周辺回路領域の透明電極と駆動基板の周辺回路領域の遮光性金属層間には必ずしも固定電界を印加しなくてもよい。
[５] 光学研磨ダメージがエッチングされたガラスからなる支持基板上に絶縁膜を介して画素開口部形成して相互に層間絶縁した二重した遮光性金属層を形成し、上部の遮光性金属層上に絶縁膜を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と対向基板の透明電極間に任意の固定電界を常時印加し、下部の遮光性金属層と対向基板の透明電極間に任意の交流電界を常時印加して、表示素子部を含む画素開口部周囲及び周辺回路部全体にノーマルブラック液晶領域が常時形成されるようにする。
この時に、画素開口部周囲の下部の遮光性金属層は上部の遮光性金属層よりも大きく、且つ画素開口部に形成する画素電極を下部の遮光性金属層よりも大きくして層間絶縁膜等を介して一部を重ね合わせることで、即ち、オーバーラップさせることで、隙間による光抜けがないようにすることが必要である。
[1] The light shielding metal layer on the drive substrate is divided into a display area and a peripheral circuit area, and the common transparent electrode on the counter substrate and the island-shaped display element portion around the pixel opening in the display area on the drive substrate are shielded. Without applying an electric field between the conductive metal layer and between the common transparent electrode of the counter substrate and the light-shielding metal layer of the entire peripheral circuit region on the driving substrate, the pixels of the common transparent electrode of the counter substrate and the display region on the driving substrate An arbitrary AC electric field is always applied between the light shielding metal layers around the opening.
[2] The light-shielding metal layer on the driving substrate is divided into a display area and a peripheral circuit area, and islands are formed in the common transparent electrode of the counter substrate and the light-shielding metal layer of the peripheral circuit area on the driving substrate and around the pixel opening. An arbitrary fixed electric field is applied between the light shielding metal layers of the display element portion, and an arbitrary AC electric field is applied between the common transparent electrode of the counter substrate and the light shielding metal layer around the pixel opening on the driving substrate.
At this time, it is not always necessary to apply a fixed electric field between the common transparent electrode of the counter substrate and the light-shielding metal layer of the peripheral circuit region on the driving substrate in order to reduce the load of the circuit for converting the normal black liquid crystal.
[3] The light-shielding metal layer on the driving substrate is divided into a display region and a peripheral circuit region, and the transparent electrode of the counter substrate corresponding thereto is also divided into the display region and the peripheral circuit region. Between the light-shielding metal layers of the display element section formed into islands in the periphery of the pixel opening portion of the display area on the driving substrate and between the transparent electrode in the peripheral circuit area of the counter substrate and the light-shielding metal layer of the peripheral circuit area on the driving substrate. An arbitrary fixed electric field is applied between them, and an arbitrary AC electric field is applied between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer around the pixel opening in the display area on the driving substrate.
At this time, it is not always necessary to apply a fixed electric field between the transparent electrode in the peripheral circuit region of the counter substrate and the light-shielding metal layer in the peripheral circuit region of the driving substrate in order to reduce the load on the circuit for converting the normal black liquid crystal.
[4] The light-shielding metal layer on the driving substrate is divided into a display area and a peripheral circuit area, and the corresponding transparent electrode of the counter substrate is also divided into the display area and the peripheral circuit area, and the display element is arranged in the display area of the counter substrate. The reflective film of the black mask corresponding to the area is formed, between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer of the display element section within the periphery of the pixel opening on the driving substrate, and the periphery of the counter substrate An arbitrary fixed electric field is applied between the transparent electrode in the circuit area and the light-shielding metal layer in the peripheral circuit area on the driving substrate, and the light shielding property around the transparent electrode in the display area on the counter substrate and the pixel opening on the driving substrate. An arbitrary AC electric field is applied between the metal layers.
At this time, it is not always necessary to apply a fixed electric field between the transparent electrode in the peripheral circuit region of the counter substrate and the light-shielding metal layer in the peripheral circuit region of the driving substrate in order to reduce the load on the circuit for converting the normal black liquid crystal.
[5] On the supporting substrate made of glass etched with optical polishing damage, a double light-shielding metal layer is formed with an interlayer insulation between the pixel openings through an insulating film, and the upper light-shielding metal layer The display element part and the peripheral circuit part are formed on the insulating film on the top, and an arbitrary fixed electric field is constantly applied between the upper light-shielding metal layer and the transparent electrode of the counter substrate, and the lower light-shielding metal layer and the counter substrate An arbitrary AC electric field is constantly applied between the transparent electrodes so that a normal black liquid crystal region is always formed around the pixel opening including the display element portion and the entire peripheral circuit portion.
At this time, the lower light-shielding metal layer around the pixel opening is larger than the upper light-shielding metal layer, and the pixel electrode formed in the pixel opening is made larger than the lower light-shielding metal layer so that an interlayer insulating film, etc. It is necessary to prevent light leakage due to the gaps by overlapping a part via the gap, that is, by overlapping.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備え、前記駆動基板上の画素開口部が前記遮光性金属層に囲まれた電気光学表示装置であって、一方の遮光性金属層上に絶縁層を介して対向電極を形成し、その反対側の遮光性金属層上に絶縁層を介して表示素子及び画素電極を形成して全面に第１の配向膜を形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理し、対向基板の全面に第２の配向膜を形成して前記第１の配向膜と同様な方向或いは任意の角度に配向処理し、対向電極と画素電極の間の液晶に映像信号に応じた横方向の電界で液晶動作させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Or a second single crystal semiconductor layer having a peripheral circuit portion on the strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, The pixel opening on the driving substrate is An electro-optical display device surrounded by a light-shielding metal layer, wherein a counter electrode is formed on one light-shielding metal layer via an insulating layer, and an insulating layer is placed on the opposite light-shielding metal layer. Then, a display element and a pixel electrode are formed, a first alignment film is formed on the entire surface, an alignment process is performed in parallel or at an arbitrary angle with the counter electrode and the pixel electrode, and a second alignment film is formed on the entire surface of the counter substrate. Then, the alignment treatment is performed in the same direction as the first alignment film or in an arbitrary angle, and the liquid crystal is operated in the liquid crystal between the counter electrode and the pixel electrode with a horizontal electric field corresponding to the video signal.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備え、前記駆動基板上の画素開口部が前記遮光性金属層に囲まれた電気光学表示装置であって、一方の遮光性金属層上に絶縁層を介して対向電極を形成し、その反対側の遮光性金属層上に絶縁層を介して表示素子及び画素電極を形成して全面に第１の配向膜を形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理し、対向基板の全面に第２の配向膜を形成して前記第１の配向膜と同様な方向或いは任意の角度に配向処理し、対向電極と画素電極の間の液晶に映像信号に応じた横方向の電界で液晶動作させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optical display device comprising: a drive substrate having a distorted single crystal semiconductor layer; and a counter substrate opposed to the drive substrate with a liquid crystal interposed therebetween, wherein a pixel opening on the drive substrate is surrounded by the light-shielding metal layer On one light-shielding metal layer A counter electrode is formed through an insulating layer, a display element and a pixel electrode are formed on the light-shielding metal layer on the opposite side through the insulating layer, and a first alignment film is formed on the entire surface. An alignment process is performed parallel to the electrode or at an arbitrary angle, a second alignment film is formed on the entire surface of the counter substrate, and the alignment process is performed in the same direction as the first alignment film or at an arbitrary angle. The liquid crystal is operated with a horizontal electric field corresponding to the video signal.
上記した本発明に係る電気光学表示装置は、光学研磨ダメージをエッチングしたガラスからなる支持基板上の画素開口部が遮光性金属層に囲まれた構造の表示部において、一方の遮光性金属層上に対向電極を形成し、その反対側の遮光性金属層上に表示素子及び画素電極を形成して全面に配向膜形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理させ、必要に応じて透明電極無しの対向基板にも全面に配向膜を形成し、同様な方向或いは任意の角度に配向処理させ、対向電極と画素電極間に映像信号に応じた横方向の電界で液晶動作させる、いわゆるＩＰＳ（In-Plane Switching）モード液晶動作により、液晶の上下左右方向からの視野角特性を改善して広視野角の透過型ＬＣＤが実現出来る。 The electro-optical display device according to the present invention described above has a structure in which a pixel opening on a support substrate made of glass etched with optical polishing damage is surrounded by a light-shielding metal layer, on one light-shielding metal layer. A counter electrode is formed on the light-shielding metal layer on the opposite side, a display element and a pixel electrode are formed, an alignment film is formed on the entire surface, and an alignment process is performed parallel to the counter electrode and the pixel electrode or at an arbitrary angle. In response to this, an alignment film is formed on the entire surface of the counter substrate without a transparent electrode, and the alignment process is performed in the same direction or at an arbitrary angle. By so-called IPS (In-Plane Switching) mode liquid crystal operation, it is possible to improve the viewing angle characteristics of the liquid crystal from the top, bottom, left, and right directions and realize a wide viewing angle transmissive LCD.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、画素開口部以外の表示部及び周辺回路部が前記遮光性金属層により遮光されている駆動基板側から光入射させて液晶動作させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. An optical display device Display unit other than the opening portion and the peripheral circuit portion by the light incident from the driving substrate side being shielded by the light-shielding metal layer is made to a liquid crystal operation.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、画素開口部以外の表示部及び周辺回路部が前記遮光性金属層により遮光されている駆動基板側から光入射させて液晶動作させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, the electro-optical display device includes a drive substrate having a distorted single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, wherein the display portion and the peripheral circuit portion other than the pixel opening portion have the light shielding property. Shaded by metal layer By light incidence is made to the liquid crystal operation from moving the substrate side.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって枠体に取り付けられた電気光学表示装置であって、前記対向基板サイズよりも前記駆動基板サイズを大きくし、前記駆動基板上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層及び第２の単結晶半導体層若しくは歪み単結晶半導体層及び前記遮光性金属層面に絶縁層を介して前記高熱伝導性モールド樹脂を直接接触させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. The optical display panel An electro-optical display device attached to a frame with a conductive mold resin, wherein the drive substrate size is larger than the counter substrate size, and the first single crystal semiconductor layer or the strain-applied single crystal on the drive substrate The high thermal conductive mold resin is in direct contact with the surface of the semiconductor layer and the second single crystal semiconductor layer or the strained single crystal semiconductor layer and the light shielding metal layer via an insulating layer.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって枠体に取り付けられた電気光学表示装置であって、前記対向基板サイズよりも前記駆動基板サイズを大きくし、前記駆動基板上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層及び第２の単結晶半導体層若しくは歪み単結晶半導体層及び前記遮光性金属層面に絶縁層を介して前記高熱伝導性モールド樹脂を直接接触させている。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region; a second transparent insulating layer on the light-shielding metal layer; a first single crystal semiconductor layer on the second transparent insulating layer; or a strain-applying single crystal. A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optical display device in which an electro-optical display panel including a driving substrate having a strained single crystal semiconductor layer and a counter substrate facing the driving substrate with a liquid crystal interposed therebetween is attached to a frame body with a high thermal conductive mold resin. Before The drive substrate size is made larger than the counter substrate size, the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer and the second single crystal semiconductor layer or the strain single crystal semiconductor layer on the drive substrate, and the light shielding The highly heat conductive mold resin is directly brought into contact with the surface of the conductive metal layer through an insulating layer.
上記した本発明に係る電気光学表示装置は、対向基板よりも駆動基板を若干大きく設計して、駆動基板上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層及び第２の単結晶半導体層若しくは歪み単結晶半導体層及び遮光性金属層面に高熱伝導性モールド樹脂を直接接触させることで放熱効果を高め、高輝度化と長寿命化を図ることが出来る。 In the electro-optical display device according to the present invention, the drive substrate is designed to be slightly larger than the counter substrate, and the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer and the second single crystal on the drive substrate are designed. By directly contacting the highly heat-conductive mold resin with the semiconductor layer or the strained single crystal semiconductor layer and the light-shielding metal layer surface, the heat dissipation effect can be enhanced, and the brightness and the life can be increased.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、前記枠体の少なくとも内側部の最表面は黒色系金属膜を形成し、前記枠体の外側部の光入射側は白色系反射膜を形成し、更に、少なくとも前記枠体の外側部の光入射側表面に凹凸形状またはフィン形状または凹凸及びフィン形状を形成している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. The optical display panel An electro-optic display device attached to a resin frame having a metal film formed on the surface thereof with a conductive mold resin, wherein the outermost surface of at least the inner part of the frame forms a black metal film, The light incident side of the outer part forms a white-type reflective film, and further, at least the light incident side surface of the outer part of the frame body has an uneven shape, a fin shape, or an uneven shape and a fin shape.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、前記枠体の少なくとも内側部の最表面は黒色系金属膜を形成し、前記枠体の外側部の光入射側は白色系反射膜を形成し、更に、少なくとも前記枠体の外側部の光入射側表面に凹凸形状またはフィン形状または凹凸及びフィン形状を形成している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region, a second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer, or a strain-applying single crystal A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display panel including a drive substrate having a strained single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, a resin frame having a metal film formed on a surface thereof with a high thermal conductive mold resin Attached to In the gas optical display device, at least an outermost surface of the frame body forms a black metal film, a light incident side of the outer portion of the frame body forms a white reflection film, and at least the An uneven shape or fin shape, or an uneven shape and fin shape are formed on the light incident side surface of the outer portion of the frame.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に、画素開口部以外の表示部及び周辺回路部が遮光性金属層により遮光されている駆動基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. The optical display panel Electro-optical display device attached to a resin frame having a metal film formed on the surface thereof with a conductive mold resin, the light incident side of the outer portion forms a white-based reflective film, and the outermost surface of the inner portion is black A drive substrate in which a display portion other than a pixel opening and a peripheral circuit portion are shielded by a light-shielding metal layer is attached to the inside of the frame body on which the metal film is formed, and the frame body is made of a highly thermally conductive mold resin. The space between the driving substrate and the counter substrate is filled and fixed.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に、画素開口部以外の表示部及び周辺回路部が遮光性金属層により遮光されている駆動基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region, a second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer, or a strain-applying single crystal A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display panel including a drive substrate having a strained single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, a resin frame having a metal film formed on a surface thereof with a high thermal conductive mold resin Attached to In the optical optical display device, the light incident side of the outer portion forms a white-based reflective film, and the outermost surface of the inner portion forms a black metal film on the inner side of the incident side of the frame other than the pixel opening. A driving substrate whose display portion and peripheral circuit portion are shielded from light by a light-shielding metal layer is attached, and the frame, the driving substrate, and the counter substrate are filled and fixed with a high thermal conductive mold resin.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層の表示領域上の表示素子部を有する結晶粒径制御した多結晶半導体層若しくは非晶質半導体層と、前記第２の透明絶縁層の周辺回路領域上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の周辺回路部を有する第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に対向基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. Controlling the crystal grain size of the light-shielding metal layer having the pixel opening region opening, the second transparent insulating layer on the light-shielding metal layer, and the display element portion on the display region of the second transparent insulating layer A polycrystalline semiconductor layer or an amorphous semiconductor layer; a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and the first single crystal semiconductor layer Alternatively, an electric device includes a second single crystal semiconductor layer having a peripheral circuit portion on a strain-applied single crystal semiconductor layer or a drive substrate having a strain single crystal semiconductor layer, and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween. The optical display panel Electro-optical display device attached to a resin frame having a metal film formed on the surface with a conductive mold resin, the light incident side of the outer part forms a white-based reflective film, and the outermost surface of the inner part is black A counter substrate is attached to the inside of the incident side of the frame body on which the metal film is formed, and the frame body, the drive substrate, and the counter substrate are filled and fixed with a high thermal conductive mold resin.
また、本発明に係る電気光学表示装置は、光学研磨ダメージがエッチングされたガラス材料からなる支持基板と、該支持基板上の第１の透明絶縁層と、該第１の透明絶縁層上の少なくとも画素開口部領域が開口した遮光性金属層と、該遮光性金属層上の第２の透明絶縁層と、該第２の透明絶縁層上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と、該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上の表示領域に表示素子部が形成され、周辺回路領域に周辺回路部が形成された第２の単結晶半導体層若しくは歪み単結晶半導体層を有する駆動基板と、該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に対向基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している。 The electro-optic display device according to the present invention includes a support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and at least on the first transparent insulating layer. A light-shielding metal layer having a pixel opening region, a second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer, or a strain-applying single crystal A second single crystal semiconductor layer in which a display element portion is formed in a semiconductor layer and a display region on the first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer, and a peripheral circuit portion is formed in a peripheral circuit region Alternatively, an electro-optic display panel including a drive substrate having a strained single crystal semiconductor layer and a counter substrate facing the drive substrate with a liquid crystal interposed therebetween, a resin frame having a metal film formed on a surface thereof with a high thermal conductive mold resin Attached to In the optical optical display device, the light incident side of the outer portion forms a white reflective film, and the outermost surface of the inner portion attaches a counter substrate to the inner side of the frame on which the black metal film is formed, The frame, the drive substrate, and the counter substrate are filled and fixed with a high thermal conductive mold resin.
上記した本発明に係る電気光学表示装置は、枠体の少なくとも内側部の最表面は黒色系金属膜形成（例えば樹脂枠の場合にはクロムメッキ膜または酸化クロムメッキ膜またはクロム蒸着膜またはクロムスパッタリング膜または酸化クロム蒸着膜または酸化クロムスパッタリング膜、或いは黒色系高熱伝導性樹脂表面の透明樹脂コート形成、金属枠の場合にはアルマイト黒化処理のアルミニウム製金属枠など）して写り込み防止させ、枠体の外側部の光入射側は白色系反射膜（アルミニウム、ニッケル等）を形成して光反射させて光吸収による枠体温度上昇を低減させ、更に、少なくとも枠体の外側部の光入射側は表面凹凸形状形成することにより光散乱させて写り込み防止させ、熱放散の表面積が増加して放熱効果が高まる。
そして、枠体の内側部に表面凹凸形状形成することで、高熱伝導性モールド樹脂との接触面積が増大して放熱効果が高まる。
更に、枠体の外側部に表面凹凸形状のみならず、フィン形状または凹凸及びフィン形状を形成することで、熱放散の表面積が増加して放熱効果が高まるようにしてもよい。
In the electro-optical display device according to the present invention, at least the innermost surface of the frame is formed with a black metal film (for example, in the case of a resin frame, a chromium plating film, a chromium oxide plating film, a chromium vapor deposition film, or chromium sputtering). Film or chromium oxide deposition film or chromium oxide sputtering film, or transparent resin coat formation on the surface of black high thermal conductive resin, in the case of a metal frame, an alumite blackened aluminum metal frame, etc.) A light-reflecting film (aluminum, nickel, etc.) is formed on the light incident side of the outer part of the frame to reflect the light, thereby reducing the temperature rise of the frame due to light absorption, and at least the light incident on the outer part of the frame By forming a surface uneven shape on the side, light is scattered to prevent reflection, and the surface area of heat dissipation is increased to increase the heat dissipation effect.
And by forming the surface irregularities on the inner side of the frame, the contact area with the high thermal conductive mold resin is increased and the heat dissipation effect is enhanced.
Furthermore, by forming not only the surface uneven shape on the outer side of the frame but also the fin shape or the uneven shape and the fin shape, the heat dissipation surface area may be increased to enhance the heat dissipation effect.
本発明により、以下の効果を奏することができる。 According to the present invention, the following effects can be obtained.
（１）低リーク電流特性を有する多結晶半導体層、非晶質半導体層、単結晶半導体層或いは歪み単結晶半導体層の表示素子部と、高移動度の単結晶半導体層若しくは歪み単結晶半導体層の周辺回路部の一体型で構成される高輝度、高精細、高性能の電気光学表示装置を実現することができる。 (1) A display element portion of a polycrystalline semiconductor layer, an amorphous semiconductor layer, a single crystal semiconductor layer, or a strained single crystal semiconductor layer having low leakage current characteristics, and a high mobility single crystal semiconductor layer or strained single crystal semiconductor layer It is possible to realize a high-brightness, high-definition, high-performance electro-optic display device that is configured as an integrated type of peripheral circuit section.
（２）ガラス材料からなる支持基板上のＳＯＩ層にシステムＬＳＩを集積できるために、周辺回路部に取り込める周辺ＬＳＩ機能が増え、低コストで電気光学表示装置の高性能化を図ることができる。 (2) Since the system LSI can be integrated on the SOI layer on the support substrate made of a glass material, the peripheral LSI functions that can be incorporated into the peripheral circuit section are increased, and the performance of the electro-optic display device can be improved at low cost.
（３）画素開口部以外に遮光性金属層を形成したガラス材料からなる支持基板上に超薄型ＳＯＩ構造の低リーク電流特性を有する多結晶半導体層、非晶質半導体層、単結晶半導体層或いは歪み単結晶半導体層の表示素子部と高移動度の単結晶半導体層若しくは歪み単結晶半導体層の周辺回路部を形成することによって、表示素子部及び周辺回路部への漏れ光及び静電気ダメージに強い高輝度、高精細、高性能の電気光学表示装置を実現することができる。
この時に、画素開口部以外の表示部及び周辺回路部が遮光性金属層により光遮蔽されている駆動基板側から光入射させて使用できるので、対向基板側に遮光膜が不要でコストダウン出来る。
(3) A polycrystalline semiconductor layer, an amorphous semiconductor layer, and a single crystal semiconductor layer having a low leakage current characteristic of an ultra-thin SOI structure on a support substrate made of a glass material in which a light-shielding metal layer is formed in addition to the pixel opening. Alternatively, by forming a display element portion of the strained single crystal semiconductor layer and a peripheral circuit portion of the high mobility single crystal semiconductor layer or the strained single crystal semiconductor layer, light leakage and electrostatic damage to the display element portion and the peripheral circuit portion can be prevented. A strong high-brightness, high-definition, high-performance electro-optic display device can be realized.
At this time, since the display portion and the peripheral circuit portion other than the pixel opening portion can be used with light incident from the drive substrate side where light is shielded by the light shielding metal layer, a light shielding film is not required on the counter substrate side, and the cost can be reduced.
（４）ガラス材料からなる支持基板表面の酸化セリウム等の研磨剤による光学研磨ダメージ（歪み、ナノメーターレベルのクラックなど）をエッチングし、支持基板上にエッチングしたナノメーターレベルのエッチング溝部の埋め込み及び平坦性向上のために透明絶縁層を形成するので、貼り合せ不良、熱ストレスによる単結晶半導体層への歪み応力等が低減し、透過型ＬＣＤの歩留・品質向上を図ることができる。なお、窒化系シリコン膜を含む透明絶縁層を形成することによって、液晶組立後やデバイスプロセス中の支持基板からのハロゲン元素（Ｎａイオンなど）汚染を防止することができると共に、表示領域をエッチングして透明絶縁層を露出させる際のエッチングストッパとして作用するので歩留・品質向上を図ることができる。 (4) Etching optical polishing damage (distortion, nanometer level cracks, etc.) caused by an abrasive such as cerium oxide on the surface of the support substrate made of a glass material, and embedding a nanometer level etching groove portion etched on the support substrate; Since the transparent insulating layer is formed to improve the flatness, bonding failure, distortion stress to the single crystal semiconductor layer due to thermal stress, and the like can be reduced, and the yield and quality of the transmissive LCD can be improved. By forming a transparent insulating layer including a nitride silicon film, it is possible to prevent contamination of halogen elements (such as Na ions) from the support substrate after the liquid crystal assembly or during the device process, and to etch the display area. Thus, it acts as an etching stopper when exposing the transparent insulating layer, so that the yield and quality can be improved.
（５）周辺回路部及び表示素子部を光遮蔽した遮光性金属層を有する光学研磨ダメージをエッチングしたガラス材料からなる支持基板上の複数の画素開口部をエッチングして凹形状のマイクロレンズ部を複数形成し、高屈折率透明樹脂または無機系高屈折率透明膜によりマイクロレンズアレイ部を埋め込み、必要に応じて表面を光学研磨して表面平坦化して画素開口部上に透明画素電極を形成することで、入射側の集光レンズとして機能するマイクロレンズ部周囲に遮光膜形成したマイクロレンズアレイ付き駆動基板を備える、いわゆるシングルマイクロレンズ構造の高輝度、高コントラスト、高機能の透過型ＬＣＤを形成することが出来る。
この時は、駆動基板側から光入射するが、画素開口部以外の表示部及び周辺回路部に遮光性金属層があるので、改めてマイクロレンズ周囲に遮光膜を形成する必要は無く、更に対向基板側のＴＦＴ部対応領域にも遮光膜を形成する必要はないのでコストダウン出来る。
(5) A concave microlens portion is formed by etching a plurality of pixel openings on a support substrate made of a glass material etched with optical polishing damage having a light shielding metal layer that shields light from the peripheral circuit portion and the display element portion. A plurality of microlens arrays are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film, and the surface is optically polished as necessary to flatten the surface to form a transparent pixel electrode on the pixel opening. Thus, a high-brightness, high-contrast, high-functional transmissive LCD with a microlens array drive substrate with a light-shielding film formed around the microlens part that functions as a condenser lens on the incident side is formed. I can do it.
At this time, light is incident from the drive substrate side, but since there is a light-shielding metal layer in the display portion and the peripheral circuit portion other than the pixel opening, it is not necessary to form a light-shielding film around the microlens again, and the counter substrate Since it is not necessary to form a light shielding film in the TFT area corresponding to the side, the cost can be reduced.
（６）上記（５）による入射側の集光レンズとして機能する複数のマイクロレンズ部周囲に遮光膜形成したマイクロレンズアレイ付き駆動基板と、出射側のフィールドレンズとして機能する複数のマイクロレンズ部周囲に遮光膜形成したマイクロレンズアレイ付き対向基板で液晶を挟み込む、或いは入射側の集光レンズとして機能する複数のマイクロレンズ部周囲に遮光膜形成したマイクロレンズアレイ付き対向基板と、上記（５）による出射側のフィールドレンズとして機能する複数のマイクロレンズ部周囲に遮光膜形成したマイクロレンズアレイ付き駆動基板で液晶を挟み込む、いわゆるデュアルマイクロレンズ構造の高輝度、高コントラスト、高機能の透過型ＬＣＤを形成することが出来る。
このように、超薄型駆動基板層の表示素子領域及び画素開口部に対応するマイクロレンズ周囲にブラックマスク作用の反射膜を形成し、強い入射光の不要な部分を反射させ、且つ液晶への遮光作用をさせることで、コントラストを高めて画質向上させ、液晶温度上昇を低減させてＬＣＤの高輝度化、長寿命化を図ることが出来る。
(6) The driving substrate with a microlens array in which a light-shielding film is formed around the plurality of microlens portions functioning as the condensing lens on the incident side according to the above (5), and the periphery of the plurality of microlens portions functioning as the field lens on the emission side (5) Forms a so-called dual microlens structure high-brightness, high-contrast, high-function transmissive LCD with liquid crystal sandwiched between drive substrates with a microlens array formed around a plurality of microlens parts that function as field lenses on the output side I can do it.
In this way, a reflective film having a black mask action is formed around the microlens corresponding to the display element region and the pixel opening of the ultra-thin driving substrate layer, and an unnecessary portion of strong incident light is reflected, and the liquid crystal is applied to the liquid crystal. By performing the light shielding effect, it is possible to improve the image quality by improving the contrast and to reduce the rise in the liquid crystal temperature, thereby increasing the brightness and extending the life of the LCD.
（７）例えばＴＮ（ツイストネマティック）モード液晶などのノーマルホワイト液晶状態において、表示素子部を含む画素開口部周囲及び周辺回路部全体にノーマルブラック液晶領域が常時形成されるようにすることで、画素間の横方向電界による液晶配向乱れ防止と画素間の光洩れ防止が出来るので、入射光及び反射光の洩れ光によるＴＦＴリーク電流抑制、コントラスト向上を図ることができる。
このように、液晶のノーマルブラック領域が表示部の画素開口部周囲及び周辺回路部全体を覆うことで洩れ光防止できるので、ＴＦＴ洩れ光対策プロセス低減によるＴＦＴプロセスのスリム化、例えばＴＦＴフォトマスク枚数削減、ＣＭＰ工程削減などでのコストダウンが実現する。
さらに、下記のように電界印加方法を適正化することで、表示領域の液晶焼き付き等の液晶動作不具合を防止し、表示部及び周辺回路領域内のＴＦＴのゲート電位変動による特性悪化を防止し、ノーマルブラック液晶化用回路の負荷低減を図ることが出来る。
(7) For example, in a normal white liquid crystal state such as a TN (twisted nematic) mode liquid crystal, a normal black liquid crystal region is always formed around the pixel opening including the display element portion and the entire peripheral circuit portion. Since the liquid crystal alignment disorder due to the horizontal electric field between them can be prevented and the light leakage between the pixels can be prevented, it is possible to suppress the TFT leakage current and improve the contrast due to the leakage light of the incident light and the reflected light.
As described above, since the normal black region of the liquid crystal covers the periphery of the pixel opening of the display portion and the entire peripheral circuit portion, leakage light can be prevented, so that the TFT process can be reduced by reducing the TFT leakage light countermeasure process, for example, the number of TFT photomasks. Reduction in costs due to reduction and CMP process reduction.
Furthermore, by optimizing the electric field application method as described below, it prevents liquid crystal operation defects such as liquid crystal burn-in in the display area, prevents deterioration in characteristics due to gate potential fluctuations of TFTs in the display part and the peripheral circuit area, The load on the normal black liquid crystal circuit can be reduced.
例えば、
駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、対向基板の共通透明電極と駆動基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の共通透明電極と周辺回路領域全体の遮光性金属層の間に電界を印加せず、対向基板の共通透明電極と駆動基板上の表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する。
あるいは、
駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、対向基板の共通透明電極と駆動基板上の周辺回路領域の遮光性金属層間及び表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層間には任意の固定電界を印加し、対向基板の共通透明電極と駆動基板上の表示領域の画素開口部周囲の遮光性金属層間には任意の交流電界を印加する。
あるいは、
駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、それに対応する対向基板の透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と駆動基板上の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の周辺回路領域の透明電極と駆動基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を印加し、対向基板の表示領域の透明電極と駆動基板上の表示領域の画素開口部周囲の遮光性金属層の間には任意の交流電界を印加する。
あるいは、
駆動基板上の遮光性金属層を表示領域と周辺回路領域に分割し、それに対応する対向基板の透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域内に表示素子部に対応したブラックマスクの反射膜を形成し、対向基板の表示領域の透明電極と駆動基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び対向基板の周辺回路領域の透明電極と駆動基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を印加し、対向基板の表示領域の透明電極と駆動基板上の画素開口部周囲の遮光性金属層の間には任意の交流電界を印加する。
あるいは、
光学研磨ダメージをエッチングしたガラスからなる支持基板上に画素開口部形成して相互に層間絶縁した二重の遮光性金属層を形成し、上部の遮光性金属層上に絶縁膜を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と対向基板の透明電極間に任意の固定電界を常時印加し、下部の遮光性金属層と対向基板の透明電極間に任意の交流電界を常時印加するが、画素開口部周囲の下部の遮光性金属層は上部の遮光性金属層よりも大きく、且つ画素開口部に形成する画素電極を下部の遮光性金属層よりも大きくして層間絶縁膜を介してオーバーラップさせることで、隙間による光抜けがないようにする。
For example,
The light-shielding metal layer on the drive substrate is divided into a display area and a peripheral circuit area, and the light-shielding metal layer of the display element section formed into islands around the common transparent electrode of the counter substrate and the pixel opening of the display area on the drive substrate Between the common transparent electrode of the counter substrate and the light-shielding metal layer of the entire peripheral circuit region without applying an electric field, and the light-shielding metal around the pixel opening of the display region on the driving substrate and the common transparent electrode of the counter substrate An arbitrary alternating electric field is always applied between the layers.
Or
Dividing the light-shielding metal layer on the drive substrate into the display area and the peripheral circuit area, and forming islands in the common transparent electrode of the counter substrate and the light-shielding metal layer in the peripheral circuit area on the drive board and around the pixel opening in the display area An arbitrary fixed electric field is applied between the light-shielding metal layers of the display element section, and an arbitrary AC electric field is applied between the common transparent electrode of the counter substrate and the light-shielding metal layers around the pixel opening of the display area on the driving substrate. To do.
Or
The light-shielding metal layer on the drive substrate is divided into a display area and a peripheral circuit area, and the corresponding transparent electrode on the counter substrate is also divided into the display area and the peripheral circuit area. Arbitrary fixing between the light shielding metal layers of the display element section formed into islands in the periphery of the pixel opening and between the transparent electrode in the peripheral circuit area of the counter substrate and the light shielding metal layer of the peripheral circuit area on the driving substrate. An electric field is applied, and an arbitrary AC electric field is applied between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer around the pixel opening in the display area on the driving substrate.
Or
The light-shielding metal layer on the drive substrate is divided into the display area and the peripheral circuit area, and the transparent electrode of the counter substrate corresponding to it is also divided into the display area and the peripheral circuit area, and corresponds to the display element part in the display area of the counter substrate. The reflective film of the black mask is formed, and between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer of the display element portion in the periphery of the pixel opening in the display area on the driving substrate and the periphery of the counter substrate An arbitrary fixed electric field is applied between the transparent electrode in the circuit area and the light-shielding metal layer in the peripheral circuit area on the driving substrate, and the light shielding property around the transparent electrode in the display area on the counter substrate and the pixel opening on the driving substrate. An arbitrary AC electric field is applied between the metal layers.
Or
A pixel opening is formed on a support substrate made of glass etched with optical polishing damage to form a double light-shielding metal layer with interlayer insulation therebetween, and a display element is formed on the upper light-shielding metal layer via an insulating film And a peripheral circuit section, and an arbitrary fixed electric field is always applied between the upper light-shielding metal layer and the transparent electrode of the counter substrate, and an arbitrary AC electric field is applied between the lower light-shielding metal layer and the transparent electrode of the counter substrate. However, the lower light-shielding metal layer around the pixel opening is larger than the upper light-shielding metal layer, and the pixel electrode formed in the pixel opening is made larger than the lower light-shielding metal layer, By overlapping through the insulating film, light leakage due to the gap is prevented.
（８）光学研磨ダメージをエッチングしたガラスからなる支持基板上の画素開口部が遮光性金属層に囲まれた構造において、一方の遮光性金属層上に対向電極を形成し、その反対側の遮光性金属層上に表示素子及び画素電極を形成して全面に配向膜形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理させ、必要に応じて透明電極無しの対向基板にも全面に配向膜を形成し、同様な方向或いは任意の角度に配向処理させ、対向電極と画素電極間に映像信号に応じた横方向の電界で液晶動作させる、いわゆるＩＰＳ（In-Plane Switching）モード液晶動作により、液晶の上下左右方向からの視野角特性を改善して広視野角の透過型LCDが実現出来る。 (8) In a structure in which a pixel opening on a support substrate made of glass etched for optical polishing damage is surrounded by a light-shielding metal layer, a counter electrode is formed on one light-shielding metal layer, and light shielding on the opposite side is formed. A display element and a pixel electrode are formed on the conductive metal layer, an alignment film is formed on the entire surface, and an alignment process is performed parallel to or at an arbitrary angle with the counter electrode and the pixel electrode. IPS (In-Plane Switching) mode liquid crystal, in which an alignment film is formed on the substrate and aligned in the same direction or at an arbitrary angle, and the liquid crystal is operated with a horizontal electric field according to the video signal between the counter electrode and the pixel electrode. By operation, it is possible to improve the viewing angle characteristics of the liquid crystal from the top, bottom, left, and right directions and realize a transmissive LCD with a wide viewing angle.
（９）対向基板よりも駆動基板を若干大きく設計して、駆動基板上の単結晶Ｓｉ層及び遮光性金属層面に高熱伝導性モールド樹脂を直接接触させることで放熱効果を高め、高輝度化と長寿命化を図ることが出来る。 (9) The drive substrate is designed to be slightly larger than the counter substrate, and the heat dissipation effect is increased by increasing the heat dissipation effect by bringing the high thermal conductive mold resin into direct contact with the single crystal Si layer and the light shielding metal layer surface on the drive substrate. Long life can be achieved.
（１０）枠体の少なくとも内側部の最表面は黒色系金属膜形成（例えば樹脂枠の場合にはクロムメッキ膜または酸化クロムメッキ膜またはクロム蒸着膜またはクロムスパッタリング膜または酸化クロム蒸着膜または酸化クロムスパッタリング膜、或いは黒色系高熱伝導性樹脂表面の透明樹脂コート形成、金属枠の場合にはアルマイト黒化処理のアルミニウム製金属枠など）して写り込み防止させ、枠体の外側部の光入射側は白色系反射膜（アルミニウム、ニッケル等）を形成して光反射させて光吸収による枠体温度上昇を低減させ、更に、少なくとも枠体の外側部の光入射側は表面凹凸形状形成することにより光散乱させて写り込み防止させ、熱放散の表面積が増加して放熱効果が高まる。
そして、枠体の内側部に表面凹凸形状形成することで、高熱伝導性モールド樹脂との接触面積が増大して放熱効果が高まる。
更に、枠体の外側部に表面凹凸形状のみならず、フィン形状または凹凸及びフィン形状を形成することで、熱放散の表面積が増加して放熱効果が高まるようにしてもよい。
更に、金属製戻り反射防止板の代わりに黒色メッキ樹脂枠にすると、コストダウン出来る。
(10) A black metal film is formed on the outermost surface of at least the inner part of the frame (for example, in the case of a resin frame, a chromium plating film, a chromium oxide plating film, a chromium vapor deposition film, a chromium sputtering film, a chromium oxide vapor deposition film, or chromium oxide) Sputtering film or transparent resin coating on the surface of black high thermal conductive resin, and in the case of metal frame, anodized black metal frame made of anodized aluminum, etc.) to prevent reflection, and light incident side on the outside of the frame By forming a white reflective film (aluminum, nickel, etc.) and reflecting the light, the temperature rise of the frame due to light absorption is reduced, and furthermore, at least the light incident side of the outer part of the frame is formed with an uneven surface shape. Light scattering is performed to prevent reflection, and the surface area of heat dissipation is increased to increase the heat dissipation effect.
And by forming the surface irregularities on the inner side of the frame, the contact area with the high thermal conductive mold resin is increased and the heat dissipation effect is enhanced.
Furthermore, by forming not only the surface uneven shape on the outer side of the frame but also the fin shape or the uneven shape and the fin shape, the heat dissipation surface area may be increased to enhance the heat dissipation effect.
Further, if a black plated resin frame is used instead of the metal return antireflection plate, the cost can be reduced.
以下、本発明の実施の形態について図面を参照しながら説明し、本発明の理解に供する。なお、以下では、（Ａ）いずれにも遮光性金属層が形成されていない支持基板及び種子基板でＳＯＩ基板を形成する場合、（Ｂ）表示領域及び周辺回路領域に遮光性金属層が形成された支持基板と種子基板でＳＯＩ基板を形成する場合、（Ｃ）表示領域及び周辺回路領域に遮光性金属層が形成された種子基板と支持基板でＳＯＩ基板を形成する場合について説明を行う。 Hereinafter, embodiments of the present invention will be described with reference to the drawings to facilitate understanding of the present invention. In the following description, when (A) the SOI substrate is formed of a support substrate and a seed substrate in which neither of the light-shielding metal layers is formed, (B) the light-shielding metal layer is formed in the display region and the peripheral circuit region. In the case where the SOI substrate is formed with the support substrate and the seed substrate, (C) the case where the SOI substrate is formed with the seed substrate and the support substrate in which the light-shielding metal layer is formed in the display region and the peripheral circuit region will be described.
（Ａ）いずれにも遮光性金属層が形成されていない支持基板及び種子基板でＳＯＩ基板を形成する場合
（Ａ−１）多孔質半導体層分離法
本実施例においては、多孔質シリコン（以下、「Ｓｉ」と称する。）層を使用した多孔質半導体層分離法による透過型ＬＣＤの製造方法について説明する。
(A) In the case where an SOI substrate is formed with a support substrate and a seed substrate in which neither of the light-shielding metal layers is formed (A-1) Porous semiconductor layer separation method In this example, porous silicon (hereinafter, A method for manufacturing a transmissive LCD by a porous semiconductor layer separation method using layers will be described.
（１）種子基板１０としての単結晶Ｓｉ基板に陽極酸化法で多孔質Ｓｉ層（低多孔質Ｓｉ層１１ａ、高多孔質Ｓｉ層１１ｂ、低多孔質Ｓｉ層１１ｃ）を形成する。
(1) A porous Si layer (low
[１]まず、例えば８インチφのｐ型Ｓｉ単結晶（抵抗率０．０１〜０．０２Ω・ｃｍ）の種子基板（以下、「Ｓｉ基板」とも称する。）１０に、モノシランガス、ジボランガスなどのＣＶＤ法によりボロン１×１０１９ａｔｏｍｓ／ｃｍ３程度の濃度でｐ型不純物を添加し、約１０μｍ厚の高濃度の半導体エピタキシャル成長の単結晶Ｓｉ層（後述する低多孔質Ｓｉ層１１ａに相当する）を形成する。
[1] First, a monosilane gas, diborane gas or the like is applied to a seed substrate (hereinafter also referred to as “Si substrate”) 10 of, for example, an 8-inch φ p-type Si single crystal (resistivity 0.01 to 0.02 Ω · cm). A p-type impurity is added by a CVD method at a concentration of about 1 × 10 19 atoms / cm 3 of boron, and a high-concentration semiconductor epitaxial growth single crystal Si layer having a thickness of about 10 μm (corresponding to a low
[２]この高濃度層表面に、モノシランガス、ジボランガスなどのＣＶＤ法によりボロン５×１０１４ａｔｏｍｓ／ｃｍ３程度の濃度でｐ型不純物を添加し、約２０μｍ厚の低濃度の半導体エピタキシャル成長の単結晶Ｓｉ層（後述する高多孔質Ｓｉ層１１ｂに相当する）を形成する。
[2] A p-type impurity at a concentration of about 5 × 10 14 atoms / cm 3 of boron is added to the surface of the high concentration layer by a CVD method such as monosilane gas or diborane gas, and a single crystal of low concentration semiconductor epitaxial growth having a thickness of about 20 μm. A Si layer (corresponding to a highly
[３]さらに、この低濃度層表面に、モノシランガス、ジボランガスなどのＣＶＤ法によりボロン５×１０１９ａｔｏｍｓ／ｃｍ３程度の濃度でｐ型不純物を添加し、約１０μｍ厚の高濃度の半導体エピタキシャル成長の単結晶Ｓｉ層（後述する低多孔質Ｓｉ層１１ｃに相当する）を形成する。
[3] Further, a p-type impurity is added to the surface of the low concentration layer at a concentration of about 5 × 10 19 atoms / cm 3 by a CVD method such as monosilane gas or diborane gas, and high concentration semiconductor epitaxial growth of about 10 μm thickness is performed. A single crystal Si layer (corresponding to a low
なお、気相エピタキシーであるＣＶＤ法での単結晶Ｓｉ層形成には、水素化物原料のモノシラン（ＳｉＨ４）以外に、同じく水素化物原料のジシラン（Ｓｉ２Ｈ６）、トリシラン（Ｓｉ３Ｈ８）、テトラシラン（Ｓｉ４Ｈ１０）や、ハロゲン化物原料のジクロルシラン（ＳｉＨ２Ｃｌ２）、トリクロルシラン（ＳｉＨＣｌ３）、四塩化ケイ素（ＳｉＣｌ４）などの原料ガスを用いることができる。また、単結晶Ｓｉ層の形成方法としては、ＣＶＤ法に限らず、ＭＢＥ（MolecularBeam Epitaxy；分子線エピタキシー）法、スパッター法等でもよい。 For forming a single crystal Si layer by CVD, which is vapor phase epitaxy, besides hydride raw material monosilane (SiH 4 ), hydride raw material disilane (Si 2 H 6 ), trisilane (Si 3 H 8). ), Tetrasilane (Si 4 H 10 ), and raw material gases such as dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and silicon tetrachloride (SiCl 4 ), which are halide raw materials, can be used. Further, the method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE (Molecular Beam Epitaxy) method, a sputtering method, or the like.
[４]その後、陽極化成法により、例えば電解液に５０％フッ化水素溶液とエチルアルコールとを２：１の体積割合で混合した混合液を用い、例えば約１０ｍＡ／ｃｍ２の電流密度で５〜１０分間電流を流し、高濃度層に多孔率の低い多孔質Ｓｉ層１１ａ，１１ｃ、低濃度層に多孔率の高い多孔質Ｓｉ層１１ｂを形成する。
[4] Then, using an anodizing method, for example, a mixed solution in which a 50% hydrogen fluoride solution and ethyl alcohol are mixed at a volume ratio of 2: 1 with an electrolytic solution, for example, 5 at a current density of about 10 mA / cm 2. An electric current is applied for 10 minutes to form porous Si layers 11a and 11c having a low porosity in the high concentration layer, and
なお、陽極化成におけるＳｉの溶解反応ではフッ化水素溶液中のＳｉの陽極反応には正孔が必要であるため、基板には多孔質化しやすいｐ型Ｓｉ基板を用いるのが望ましいが、これに限るものではない。 In addition, since a hole is required for the anodic reaction of Si in the hydrogen fluoride solution in the Si dissolution reaction in anodization, it is desirable to use a p-type Si substrate that is easily made porous. It is not limited.
また、このように、陽極化成法により多孔質層を形成する場合は、多孔質層を多孔率の異なる複数の層で構成することができる。なお、上記の様に、単結晶Ｓｉ基板１０上に低多孔質Ｓｉ層１１ａ、高多孔質Ｓｉ層１１ｂ、低多孔質Ｓｉ層１１ｃを順に形成した３層構造とするほか、単結晶Ｓｉ基板１０の上に高多孔質Ｓｉ層１１ｂと低多孔質Ｓｉ層１１ｃとを順に形成した２層構造としてもよい。
Further, when the porous layer is formed by anodizing as described above, the porous layer can be composed of a plurality of layers having different porosities. As described above, the single
このとき、高多孔質Ｓｉ層１１ｂの多孔率は４０％〜８０％の範囲で、低多孔質Ｓｉ層１１ａ，１１ｃの多孔率は１０〜３０％の範囲とする。この様に異なる多孔率の複数の層のそれぞれの厚みは、陽極化成時の電流密度及び時間や、陽極化成時の化成溶液の種類または濃度を変えることで任意に調整することができる。
At this time, the porosity of the highly
なお、Ｓｉ基板１０としては、ＣＺ（Czochralski）法、ＭＣＺ（Magnetic Field Applied Czochralski）法やＦＺ（Floating Zone）法などで作成された単結晶Ｓｉ基板のみならず、基板表面が水素アニール処理された単結晶Ｓｉ基板、あるいはエピタキシャル単結晶Ｓｉ基板などを用いることができる。もちろん、単結晶Ｓｉ基板に代えて単結晶ＳｉＧｅ基板、更にはＳｉＣ基板、ＧａＡｓ基板やＩｎＰ基板等の単結晶化合物半導体基板を用いることもできる。
As the
（２）多孔質Ｓｉ層（低多孔質Ｓｉ層１１ｃ）上に半導体エピタキシャル成長の単結晶Ｓｉ層１２を形成する（図１参照）。
(2) A single
[１]まず、ＣＶＤ半導体エピタキシャル成長装置内において、水素雰囲気中１０００〜１１００℃程度でプリベークを行い、低多孔質Ｓｉ層１１ｃの表面の孔を封止して表面を平坦化する。水素アニールは、１０５０℃で０．００１３ｎｍ／ｍｉｎ、１１００℃で０．００２２ｎｍ／ｍｉｎのエッチング速度で行う。
[1] First, in a CVD semiconductor epitaxial growth apparatus, pre-baking is performed at about 1000 to 1100 ° C. in a hydrogen atmosphere to seal holes on the surface of the low
[２]この後、１０２０℃まで降温し、シランガスなどを原料ガスとするＣＶＤを行い、約３μｍ厚の半導体エピタキシャル成長の単結晶Ｓｉ層１２を形成する。
[2] Thereafter, the temperature is lowered to 1020 ° C., and CVD using silane gas or the like as a raw material gas is performed to form a single
なお、上記同様に、気相エピタキシーであるＣＶＤ法での単結晶Ｓｉ層形成には、水素化物原料のモノシラン（ＳｉＨ４）以外に、同じく水素化物原料のジシラン（Ｓｉ２Ｈ６）、トリシラン（Ｓｉ３Ｈ８）、テトラシラン（Ｓｉ４Ｈ１０）や、ハロゲン化物原料のジクロルシラン（ＳｉＨ２Ｃｌ２）、トリクロルシラン（ＳｉＨＣｌ３）、四塩化ケイ素（ＳｉＣｌ４）などの原料ガスを用いることができる。また、単結晶Ｓｉ層の形成方法としては、ＣＶＤ法に限らず、ＭＢＥ（MolecularBeam Epitaxy；分子線エピタキシー）法、スパッター法等でもよい。 Similarly to the above, for forming a single crystal Si layer by CVD, which is vapor phase epitaxy, in addition to monosilane (SiH 4 ) as a hydride raw material, disilane (Si 2 H 6 ) and trisilane (hydride raw material) are also used. Source gases such as Si 3 H 8 ), tetrasilane (Si 4 H 10 ), halide raw materials dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and silicon tetrachloride (SiCl 4 ) can be used. . Further, the method for forming the single crystal Si layer is not limited to the CVD method, but may be an MBE (Molecular Beam Epitaxy) method, a sputtering method, or the like.
（３）支持基板としての石英ガラス基板３０表面の光学研磨ダメージ（歪み、ナノメーターレベルのクラックなど）をエッチングし、ＣＶＤ法で透明絶縁層１３を形成する（図１参照）。
石英ガラス基板表面には酸化セリウム等の研磨剤による光学研磨のナノメーターレベルのクラックが無数に存在してナノメーターレベルの凹凸が大きいために、この石英ガラス表面の光学研磨ダメージ及びナノメーターレベルの凹凸内の極微量な研磨剤残りをＨＦ＋Ｈ2Ｏ2＋Ｈ2Ｏ混合液、ＨＦ＋ＨＮＯ3＋ＣＨ3ＣＯＯＨ混合液などのフッ酸系エッチング液でライトエッチング及び洗浄し、発生したナノメーターレベルのエッチング溝などの凹凸をカバーして平坦性を高めるために、ＣＶＤ法等により透明絶縁層１３（ＳｉＯ２またはＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２積層膜など）を３００ｎｍ〜４００ｎｍ形成する。
(3) Optical polishing damage (distortion, nanometer level cracks, etc.) on the surface of the
The quartz glass substrate surface has numerous nanometer level cracks due to optical polishing with abrasives such as cerium oxide, and the nanometer level unevenness is large. Nanometer-level etching grooves generated by light etching and cleaning the trace amount of abrasive residue in the irregularities with hydrofluoric acid-based etchants such as HF + H 2 O 2 + H 2 O mixed solution, HF + HNO 3 + CH 3 COOH mixed solution, etc. In order to cover the unevenness and improve the flatness, a transparent insulating layer 13 (SiO 2 or SiO 2 , Si 3 N 4 and SiO 2 laminated film, etc.) is formed to a thickness of 300 to 400 nm by a CVD method or the like.
ここで、透明絶縁層は酸化シリコン膜（ＳｉＯ２）またはＳｉＯ２、窒化シリコン膜（ＳｉＮｘ）及びＳｉＯ２の積層膜または酸窒化シリコン膜（ＳｉＯＮ）のいずれでも良いが、表示領域の画素開口部をエッチングする際のエッチングムラ防止とハロゲン汚染防止のためには窒化系シリコン膜を含む透明絶縁層が好ましい。 Here, the transparent insulating layer may be any one of a silicon oxide film (SiO 2 ) or SiO 2 , a silicon nitride film (SiNx), and a laminated film of SiO 2 or a silicon oxynitride film (SiON). In order to prevent etching unevenness and halogen contamination during etching, a transparent insulating layer including a nitride silicon film is preferable.
（４）種子基板の単結晶Ｓｉ層と石英ガラス基板の透明絶縁層を貼り合せる（図２参照）。
室温で種子基板１０の単結晶Ｓｉ層１２と石英ガラス基板３０の透明絶縁層１３の表面同士を接触させ、ファンデスワールス力により結合させる。この後、４００℃３０分間の熱処理を行って共有結合させ、貼り合せを強固にする。
なお、必要に応じて前記よりも高い温度例えば約１０００℃で３０〜６０分の熱処理を追加してより強固な貼り合せにしてもよい。熱処理は、窒素中、不活性ガス中、または窒素と不活性ガスの混合ガス中で行う。このとき、双方の基板の表面に塵や汚れ付着がないことを確認する。なお、異物があった時は、剥離洗浄する。
(4) The single crystal Si layer of the seed substrate is bonded to the transparent insulating layer of the quartz glass substrate (see FIG. 2).
The surfaces of the single
If necessary, a heat treatment at a higher temperature, for example, about 1000 ° C., for 30 to 60 minutes may be added to make the bonding stronger. The heat treatment is performed in nitrogen, an inert gas, or a mixed gas of nitrogen and an inert gas. At this time, it is confirmed that there is no dust or dirt on the surfaces of both substrates. When there is a foreign substance, it is peeled and washed.
あるいは、減圧熱処理炉に重ね合わせた２枚の基板をセットし、真空引きで所定圧力（例えば１３３Ｐａ（１Ｔｏｒｒ）以下）に保持し、一定時間経過後に大気圧にブレークしたときの加圧で密着させ、連続して窒素中、不活性ガス中、または窒素と不活性ガスの混合ガス中で昇温加熱して熱処理接合する連続作業をしてもよい。 Alternatively, two substrates stacked in a reduced-pressure heat treatment furnace are set, held at a predetermined pressure (for example, 133 Pa (1 Torr) or less) by evacuation, and brought into close contact with pressure when breaking to atmospheric pressure after a certain period of time. Alternatively, continuous operation may be performed in which heat treatment is performed by heating and heating in nitrogen, in an inert gas, or in a mixed gas of nitrogen and an inert gas.
また、接合面を接合に先立って室温の真空中でアルゴンなどの不活性ガスイオンビームまたは不活性ガス高速原子ビームで照射してスパッタエッチングにより、表面の塵や汚れ付着等を除去して表面に接合するための結合力を付与して表面平滑度を高めて貼り合せを強固にしてもよい。 Prior to bonding, the bonding surface is irradiated with an inert gas ion beam such as argon or an inert gas fast atom beam in a vacuum at room temperature and sputter etching removes dust and dirt on the surface to the surface. Bonding may be strengthened by applying a bonding force for bonding to increase surface smoothness.
（５）種子基板１０及び石英ガラス基板３０裏面を紫外線照射硬化型テープ（以下、「ＵＶテープ」と称する。）９などで貼り合せて保持し、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法、レーザー加工剥離法またはレーザーウオータージェット加工剥離法などにより、高多孔質Ｓｉ層１１ｂから種子基板を分離する（図３参照）。分離した種子基板は、必要に応じて表面再研磨、エッチング、水素を含む雰囲気下での熱処理等を行い、再使用することができる。
(5) The
ここで、ＵＶテープ９は、ポリオレフィンやポリエチレンテレフタレート（ＰＥＴ）などのＵＶテープ基材及び強い粘着力で少なくとも糊残りのない帯電防止のアクリル系ＵＶ照射硬化型接着剤からなるものである。ＵＶ照射硬化型接着剤は接着力が強いため、このＵＶテープ９により種子基板１０及び石英ガラス基板３０を強固に保持及び表面保護した状態で、高多孔質Ｓｉ層１１ｂから種子基板を分離することができる。
Here, the
なお、帯電防止のＵＶテープ９としては、ＵＶテープ基材の糊側表面に導電性透明酸化膜（ＩＴＯ（Ｉｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ；酸化インジュウム・酸化錫の混合透明酸化膜）やＩＺＯ（Ｉｎｄｉｕｍ−Ｚｉｎｃ−Ｏｘｉｄｅ；酸化インジュウム・酸化亜鉛の混合透明酸化膜）など）を形成または導電性の表面化学処理したもの、または、ＵＶ照射硬化型接着剤中に静電気ダメージを防止するレベルの導電性透明酸化物微粒子（ＩＴＯやＩＺＯなど）を混入させたものなどがある。また、必要に応じてこれらを組み合わせたものを用いてもよい。この帯電防止機能により製造工程中の静電破壊を防止することができるため、静電気ダメージによる半導体特性不良を防止することができる。なお、ＵＶ照射硬化型接着剤の硬化前および硬化後の表面抵抗は、１０６〜１０１２Ω／□程度の静電気ダメージを防止するレベルであることが望ましい。
なお、用途に応じて糊残りのない帯電防止の熱膨張剥離型粘着剤のテープを用いてもよい。
As the
In addition, you may use the tape of the antistatic thermal expansion peeling type adhesive without an adhesive residue according to a use.
なお、高多孔質Ｓｉ層１１ｂからの分離を、ウオータージェット、エアージェット、ウオーターエアージェットなどの高圧流体ジェット噴射剥離法により行う場合、図９に示す高圧流体ジェット噴射剥離装置を用いる。図９は本発明の実施の形態における高圧流体ジェット噴射剥離装置の概略断面図である。
In the case where the separation from the highly
図９に示す高圧流体ジェット噴射剥離装置は、上下から基板を真空吸着して回転させる一対のホルダ８１ａ，８１ｂと、高圧流体ジェット８２を噴射する微細ノズル８３を備える。ガードリングストッパ８０は、ホルダ８１ａ，８１ｂの周囲を囲む円筒状の治具である。ガードリングストッパ８０には、微細ノズル８３から噴射される高圧流体ジェット８２の幅を制御して通過させる１０〜５０μｍ程度の径のスリット孔８４が形成されている。なお、スリット孔８４の径については、高圧流体ジェット８２の水圧および風圧との相関によって決定する。 9 includes a pair of holders 81a and 81b that rotate the substrate by vacuum suction from above and below, and a fine nozzle 83 that ejects the high-pressure fluid jet 82. The guard ring stopper 80 is a cylindrical jig surrounding the holders 81a and 81b. The guard ring stopper 80 is formed with a slit hole 84 having a diameter of about 10 to 50 μm that allows the high-pressure fluid jet 82 ejected from the fine nozzle 83 to pass therethrough. The diameter of the slit hole 84 is determined by the correlation with the water pressure and the wind pressure of the high-pressure fluid jet 82.
このような高圧流体ジェット噴射剥離装置において、例えば、ホルダ８１ａ，８１ｂ間に図２に示す種子基板１０と石英ガラス基板３０を貼り合わせた基板を挟持する。ここで分離したい層（分離層）は高多孔質Ｓｉ層１１ｂである。なお、図９においては簡単のため、種子基板１０、高多孔質Ｓｉ層１１ｂおよび石英ガラス基板３０以外については図示を省略している。
In such a high-pressure fluid jet separation apparatus, for example, a substrate obtained by bonding the
ここで、ガードリングストッパ８０の高さと、ホルダ８１ａ，８１ｂで挟持する種子基板１０および石英ガラス基板３０の高さを調整し、微細ノズル８３から噴射される高圧流体ジェット８２が分離したい回転中の高多孔質Ｓｉ層１１ｂに正確に当たるように微調整する。その後、ホルダ８１ａ，８１ｂを回転させ、微細ノズル８３から噴射する高圧流体ジェット８２の圧力を高多孔質Ｓｉ層１１ｂの横方向から作用させて種子基板１０を分離する。
Here, the height of the guard ring stopper 80 and the heights of the
このとき、微細ノズル８３から噴射する高圧流体ジェット８２は、ガードリングストッパ８０のスリット孔８４によってその幅が制御されるうえ、分離したい高多孔質Ｓｉ層１１ｂに正確に当たるようにその高さが微調整されているため、狙った高多孔質Ｓｉ層１１ｂ以外の部分には剥離するほど強く当たらない。
At this time, the width of the high-pressure fluid jet 82 ejected from the fine nozzle 83 is controlled by the slit hole 84 of the guard ring stopper 80, and the height is fine so as to accurately hit the highly
また、高圧流体ジェット８２は、ウオータージェット、エアージェットの他、水、エッチング液やアルコールなどの液体、空気、窒素ガスやアルゴンガスなどの気体や、前記液体に前記気体を適当比率で混在させた液体と気体との混合体などのジェットの噴射により行うこともできる。特に液体と気体との混合体のジェットの噴射、いわゆるウオーターエアージェットでは、液体に気体のバブルが混入し、このバブル破裂時の衝撃作用によってより効果的に分離を行える。 In addition to the water jet and air jet, the high-pressure fluid jet 82 is water, a liquid such as an etching solution or alcohol, a gas such as air, nitrogen gas or argon gas, or the liquid mixed with the gas at an appropriate ratio. It can also be performed by jetting a mixture of liquid and gas. In particular, in jetting of a mixture of liquid and gas, so-called water air jet, gas bubbles are mixed in the liquid, and separation can be performed more effectively by the impact action at the time of bubble burst.
また、高圧流体ジェット８２を吹き付ける場合には、流体に超音波を印加すると、超音波振動が多孔質層に作用するため、より効果的に多孔質層からの分離を行える。さらに、この高圧流体ジェット８２に、さらに微細な固体としての粒体や粉体（研磨剤、氷、プラスチック片など）の超微粉末を添加してもよい。このように高圧流体ジェット８２に、微細な固体を添加すれば、この微細な固体が高多孔質Ｓｉ層１１ｂに直に衝突することによって、より効果的に分離を行える。
In addition, when spraying the high-pressure fluid jet 82, when ultrasonic waves are applied to the fluid, ultrasonic vibrations act on the porous layer, so that separation from the porous layer can be performed more effectively. Furthermore, an ultrafine powder of particles or powder (abrasive, ice, plastic pieces, etc.) as a finer solid may be added to the high-pressure fluid jet 82. When a fine solid is added to the high-pressure fluid jet 82 in this way, the fine solid directly collides with the highly
あるいは、回転中の基板の高多孔質Ｓｉ層１１ｂにレーザー出力部から照射するレーザー光を当てて分離するレーザー加工剥離装置（図示せず）を用いることもできる。なお、このレーザー加工剥離装置と前述の高圧流体ジェット噴射剥離装置との違いは、レーザー出力部が前述の微細ノズル８３とスリット孔８４を組み合わせたものに相当することのみであり、他はほとんど同じ構成である。
Alternatively, a laser processing peeling apparatus (not shown) for separating the high
このレーザー加工剥離装置では、回転中の基板の高多孔質Ｓｉ層１１ｂの横方向から一つ以上のレーザー照射によるレーザー加工（アブレーション加工、熱加工など）によって、この高多孔質Ｓｉ層１１ｂから分離することができる。
In this laser processing peeling apparatus, the high
ここで、レーザーとしては、炭酸ガスレーザー、ＹＡＧ（Yttrium Aluminum Garnet）レーザー、エキシマレーザー、高調波変調レーザーなどからなる可視光、近紫外線、遠紫外線、近赤外線、遠赤外線などのレーザー光を使用できる。 Here, as the laser, laser light such as carbon dioxide laser, YAG (Yttrium Aluminum Garnet) laser, excimer laser, harmonic modulation laser, etc., visible light, near ultraviolet, far ultraviolet, near infrared, far infrared, etc. can be used. .
レーザー加工では、加工対象物が吸収する少なくとも一つ以上のパルス波または連続波のレーザー光を照射して、熱加工やアブレーション加工で分離する方法と、加工対象物に対して透過する波長を有する少なくとも一つ以上のパルス波または連続波の近赤外線レーザー（Ｎｄ：ＹＡＧレーザー、Ｎｄ：ＹＶＯ4レーザー、Ｎｄ：ＹＬＦレーザー、チタンサファイアレーザーなど）を加工対象物内部に焦点を合わせて照射し、多光子吸収による光学的損傷現象を発生させて改質領域（例えばクラック領域、溶融処理領域、屈折率変化領域など）を形成し、そこを起点として比較的小さな力で分離する方法とがある。 In laser processing, at least one pulsed wave or continuous wave laser beam absorbed by the workpiece is irradiated and separated by thermal processing or ablation processing, and a wavelength that is transmitted to the workpiece is transmitted. At least one pulsed wave or continuous wave near-infrared laser (Nd: YAG laser, Nd: YVO 4 laser, Nd: YLF laser, titanium sapphire laser, etc.) is focused on the inside of the workpiece and irradiated. There is a method in which an optical damage phenomenon due to photon absorption is generated to form a modified region (for example, a crack region, a melt processing region, a refractive index change region, etc.), and the separation is performed with a relatively small force.
一般的に、後者の場合は加工対象物例えば単結晶半導体基板の内部に集光点を合わせて、集光点におけるピークパワー密度（パルスレーザー光の集光点の電界強度）が１×１０８（Ｗ／ｃｍ２）以上で且つパルス幅が１μｓ以下の条件でレーザー光を照射すると、加工対象物内部には多光子吸収による光学的損傷現象が発生し、この光学的損傷により内部に熱ひずみが誘起され、これにより内部に改質領域例えばクラック領域が形成され、そこを起点として比較的小さな力で分離させる方法であるが、単結晶半導体基板に比べ多孔質半導体層や後述するイオン注入層の単結晶半導体層の場合は、上記以下のピークパワー密度により多光子吸収による光学的損傷現象を発生させて改質領域（例えばクラック領域、溶融処理領域、屈折率変化領域など）の形成が可能であり、このレーザー加工による多孔質半導体層や後述するイオン注入層からの分離が容易である。 Generally, in the latter case, a focusing point is set inside a workpiece, for example, a single crystal semiconductor substrate, and the peak power density at the focusing point (the electric field intensity at the focusing point of the pulse laser beam) is 1 × 10 8. When laser light is irradiated under the conditions of (W / cm 2 ) or more and a pulse width of 1 μs or less, an optical damage phenomenon due to multiphoton absorption occurs inside the workpiece, and this optical damage causes thermal strain inside. In this way, a modified region, for example, a crack region is formed inside, and the separation region is separated by a relatively small force starting from the modified region. In the case of a single crystal semiconductor layer, an optical damage phenomenon due to multiphoton absorption occurs due to the following peak power density, and a modified region (for example, a crack region, a melt processing region, a refractive index change region). It is possible to form such), it is easy separation from the porous semiconductor layer and later ion implanted layer formed by the laser processing.
レーザー加工の場合は、上記のいずれの方法でもレーザー光線を集光レンズで加工対象物内部(つまり多孔質半導体層や後述するイオン注入層の内部)に焦点を合せ、その焦点を徐々に回転中の加工対象物内部に移動させることで分離することができる。特に、本発明の場合は、加工対象物が多孔質Ｓｉ層やイオン注入層なので、このレーザー光による分離加工を高精度で効率良く行うことができる。このとき、必要に応じて流体冷却した支持治具を用いて、ＵＶテープを介して石英ガラス基板側を冷却しながら多孔質Ｓｉ層またはイオン注入層から支持基板を分離してもよい。 In the case of laser processing, in any of the above methods, the laser beam is focused inside the object to be processed (that is, inside a porous semiconductor layer or an ion implantation layer described later) with a condenser lens, and the focus is gradually rotating. It can be separated by moving it inside the workpiece. In particular, in the case of the present invention, since the object to be processed is a porous Si layer or an ion implantation layer, this laser beam separation process can be performed with high accuracy and efficiency. At this time, if necessary, the support substrate may be separated from the porous Si layer or the ion implantation layer while cooling the quartz glass substrate side via a UV tape using a support jig cooled with fluid.
また、回転中の基板の高多孔質Ｓｉ層１１ｂに、出力部からレーザー光とウオータージェットを組み合わせたレーザーウオータージェットを照射して分離するレーザーウオータージェット加工剥離装置（図示せず）を用いることもできる。なお、このレーザーウオータージェット加工剥離装置と前述のレーザー加工剥離装置および高圧流体ジェット噴射剥離装置との違いは、レーザーウオータージェット出力部が前述の微細ノズル８３とスリット孔８４を組み合わせたものに相当することのみであり、他はほとんど同じ構成である。
In addition, a laser water jet processing and peeling device (not shown) that irradiates the high
レーザーウオータージェット加工剥離法は、ウオータージェットとレーザーの利点を組み合わせ、水と空気の境界面でレーザー光が完全に反射することを利用し、グラスファイバー内と同じようにウオータージェットがレーザー光を全反射して平行にガイドし、このレーザー光の吸収による熱加工やアブレーション加工で分離する方法である。従来の熱変形が問題となるレーザー加工法と違い、レーザーウオータージェットは常時水による冷却がされているので、分離面の熱影響、例えば熱変形などが低減される。 The laser water jet processing delamination method combines the advantages of water jet and laser, and utilizes the fact that the laser light is completely reflected at the water / air interface, so that the water jet emits the entire laser light just like in glass fiber. In this method, the light is reflected and guided in parallel and separated by thermal processing or ablation processing by absorption of the laser beam. Unlike the conventional laser processing method in which thermal deformation is a problem, the laser water jet is always cooled with water, so that the thermal influence on the separation surface, such as thermal deformation, is reduced.
このレーザーウオータージェット加工剥離法では、例えば、少なくとも一つ以上のパルス波または連続波の近赤外線レーザー（Ｎｄ：ＹＡＧレーザー、Ｎｄ：ＹＶＯ4レーザー、Ｎｄ：ＹＬＦレーザー、チタンサファイアレーザーなど）が任意の水圧の純水または超純水の水柱内に封じ込まれた一つ以上のレーザーウオータージェットを、回転中の基板の高多孔質Ｓｉ層１１ｂの横方向から照射する加工（アブレーション加工、熱加工など）によって、この高多孔質Ｓｉ層１１ｂから分離することができる。
In this laser water jet processing peeling method, for example, at least one pulse wave or continuous wave near infrared laser (Nd: YAG laser, Nd: YVO 4 laser, Nd: YLF laser, titanium sapphire laser, etc.) is arbitrary. Processing (ablation processing, thermal processing, etc.) that irradiates one or more laser water jets enclosed in a water column of pure water or ultra pure water from the lateral direction of the highly
なお、レーザーとしては、炭酸ガスレーザー、ＹＡＧレーザー、エキシマレーザー、高調波変調レーザーなどからなる可視光、近赤外線、遠赤外線、近紫外線、遠紫外線などのレーザー光を使用できる。また、任意の水圧のウオータージェットの水柱は水道水でもよいが、レーザーの種類によってはレーザーを乱反射で散乱させずに減衰させない純水または超純水によるウオータージェットの水柱が望ましい。 As the laser, laser light such as carbon dioxide laser, YAG laser, excimer laser, harmonic modulation laser and the like, visible light, near infrared ray, far infrared ray, near ultraviolet ray, far ultraviolet ray and the like can be used. The water jet water column having an arbitrary water pressure may be tap water, but depending on the type of laser, a water jet water column made of pure water or ultrapure water that does not attenuate the laser without being scattered by irregular reflection is desirable.
なお、上記の高圧流体ジェット噴射剥離法、レーザー加工剥離法およびレーザーウオータージェット加工剥離法は、超薄型半導体層或いは超薄型ＳＯＩ半導体層の剥離による映像信号処理ＬＳＩ、メモリＬＳＩ、ＣＰＵＬＳＩ、ＤＳＰＬＳＩ、音声信号処理ＬＳＩ、ＣＣＤ、ＣＭＯＳセンサ、ＢiＣＭＯＳなどの半導体デバイスの製造にも使用できる。さらに、高圧流体ジェット噴射法、レーザー加工法およびレーザーウオータージェット加工法により、単結晶あるいは多結晶半導体基板あるいは透明または不透明支持基板の切断や、回転中の単結晶あるいは多結晶半導体インゴットのスライシングなどにも使用できる。 The above-described high-pressure fluid jet detachment method, laser processing detachment method, and laser water jet detachment method are the image signal processing LSI, memory LSI, CPULSI, DSPLSI by detaching the ultrathin semiconductor layer or the ultrathin SOI semiconductor layer. It can also be used to manufacture semiconductor devices such as audio signal processing LSIs, CCDs, CMOS sensors, and BiCMOS. In addition, high-pressure fluid jet injection, laser processing, and laser water jet processing can be used to cut single crystal or polycrystalline semiconductor substrates or transparent or opaque support substrates, and to slicing rotating single crystal or polycrystalline semiconductor ingots. Can also be used.
（６）剥離残りの高多孔質Ｓｉ層１１ｂ及び低多孔質Ｓｉ層１１ｃをＨＦ＋Ｈ2Ｏ2＋Ｈ2Ｏ混合液、ＨＦ＋ＨＮＯ3＋ＣＨ3ＣＯＯＨ混合液などのフッ酸系エッチャント又はアルカリ系エッチャントでウエットエッチングした後に、表示領域の単結晶Ｓｉ層１２をエッチングして透明絶縁層１３を露出させる。
(6) Wet etching of the remaining high
この後に、ＣＶＤ等で全面に遮光性金属層１４（例えば、ＷＳｉ等の遷移系シリサイド）を形成し、エッチングにより表示領域内の表示素子形成部に遮光性金属層１４を残し（図４参照）、全面に透明絶縁層１３を形成し、周辺回路領域の透明絶縁層１３をエッチングする。
Thereafter, a light-shielding metal layer 14 (for example, transitional silicide such as WSi) is formed on the entire surface by CVD or the like, and the light-shielding
なお、物理的剥離である高圧流体ジェット噴射剥離法の場合は多孔質Ｓｉ層剥離残りしやすいので前記ウエットエッチングが必要であるが、レーザー加工剥離法或いはレーザーウオータージェット加工剥離法の場合は局部的加熱溶融による剥離なので、前記多孔質Ｓｉ層の剥離残りが発生しにくく必ずしもウエットエッチングは必要ではなく、水素アニール処理によるドライエッチングのみでもよい。 In the case of the high pressure fluid jet detachment method that is physical detachment, the porous Si layer detachment is likely to remain, so the wet etching is necessary, but in the case of the laser processing detachment method or the laser water jet detachment method, it is localized. Since the peeling is performed by heating and melting, it is difficult to generate a peeling residue of the porous Si layer, and wet etching is not necessarily required. Only dry etching by hydrogen annealing may be performed.
（７）ＣＶＤ前の水素アニールにより単結晶Ｓｉ層表面をエッチングして平坦化し、この平坦化した単結晶Ｓｉ層１２をシードにＣＶＤのＳｉエピタキシャル成長させて周辺回路領域に５０〜１００ｎｍ厚の高結晶性の単結晶Ｓｉ層１５（以下、「高結晶性単結晶Ｓｉ層」と称する。）を形成し、表示領域内の透明絶縁層１３上に５０〜１００ｎｍ厚の多結晶Ｓｉ層１６（以下、「ポリＳｉ層」と称する。）を形成する（図５参照、なお、図５（ａ）は表示領域を示し、図５（ｂ）は周辺回路領域を示している）。
(7) The surface of the single crystal Si layer is etched and flattened by hydrogen annealing before CVD, and this flattened single
ところで、上記のエピタキシャル成長では、高結晶性単結晶Ｓｉ層とポリＳｉ層を同一成膜条件で形成するので、周辺回路領域の高結晶性単結晶Ｓｉ層の結晶性（電子・正孔移動度）を重視すると、表示領域のポリＳｉ層の結晶性（電子・正孔移動度）を充分に制御できない場合がある。
そこで、高結晶性単結晶Ｓｉ層の周辺回路領域をフォトレジスト膜で覆い、開口したポリＳｉ層表面にＳｉイオンを高濃度、例えば３０ＫｅＶ，１〜３×１０１５ａｔｏｍｓ／ｃｍ２で注入して表面層を非晶質Ｓｉ層（以後、アモルファスＳｉ膜とも称する。）化する。
そして、フォトレジスト膜を剥離洗浄した後に窒素ガス雰囲気中の６００〜６５０℃で１０〜１５時間のアニールによる固相成長で、結晶粒径を制御したポリＳｉ層の表面を形成する。
このとき、Ｓｉイオン注入の濃度及び深さ、更にアニール条件を調整することで、任意の結晶粒径による任意の電子・正孔移動度、例えば５０〜１００ｎｍ厚のポリＳｉ層の表面層を得ることが好ましい。
なお、ポリＳｉ層は通常約１０ｎｍ以上の粒径を持つ微細結晶の集合体と定義されており、非結晶質Ｓｉ膜（以下、アモルファスＳｉ膜と称する。）は一般的に１０ｎｍ以下の粒径であり、Ｘ線回折でも結晶配向性を示さない材料である。
By the way, in the above epitaxial growth, since the high crystalline single crystal Si layer and the poly Si layer are formed under the same film formation conditions, the crystallinity (electron / hole mobility) of the high crystalline single crystal Si layer in the peripheral circuit region. If the emphasis is on, the crystallinity (electron / hole mobility) of the poly-Si layer in the display region may not be sufficiently controlled.
Therefore, the peripheral circuit region of the high crystalline single crystal Si layer is covered with a photoresist film, and Si ions are implanted at a high concentration, for example, 30 KeV, 1 to 3 × 10 15 atoms / cm 2 into the opened poly Si layer surface. The surface layer is changed to an amorphous Si layer (hereinafter also referred to as an amorphous Si film).
Then, after the photoresist film is peeled and washed, the surface of the poly-Si layer with a controlled crystal grain size is formed by solid phase growth by annealing at 600 to 650 ° C. in a nitrogen gas atmosphere for 10 to 15 hours.
At this time, by adjusting the concentration and depth of Si ion implantation and the annealing conditions, a surface layer of a poly-Si layer having an arbitrary electron / hole mobility depending on an arbitrary crystal grain size, for example, a thickness of 50 to 100 nm is obtained. It is preferable.
The poly-Si layer is usually defined as an aggregate of fine crystals having a particle size of about 10 nm or more, and an amorphous Si film (hereinafter referred to as an amorphous Si film) generally has a particle size of 10 nm or less. It is a material that does not show crystal orientation even by X-ray diffraction.
あるいは、ポリＳｉ層のみを選択的に、例えばＸｅランプをフラッシュ照射するフラッシュランプアニール、あるいはパルス状または連続波レーザーアニール例えばＸｅＣｌエキシマレーザー、Ｎｄ：ＹＡＧレーザーの光高調波変調の遠紫外線レーザー及び近紫外線レーザーのいずれかまたは両方、可視光レーザー、赤外線レーザーなどを照射、あるいは集光ランプアニール例えば超高圧水銀ランプなどの紫外線ランプ、ハロゲンランプ、キセノンランプ、アークランプなどの赤外線ランプなどを照射して、溶融、半溶融または非溶融状態の加熱と冷却により再結晶化させることで、任意に結晶粒径を制御した例えば５０〜１００ｎｍ厚のポリＳｉ層の表面層が形成される。このとき、膜ストレス低減のために適温（例えば、２００〜４００℃）に基板を加熱した状態において、再結晶化させるフラッシュランプあるいはレーザーあるいは集光ランプ照射の強度（ポリＳｉ層表面からの深さ及び時間など）を調整することで、任意の結晶粒径による任意の電子・正孔移動度、例えば５０〜１００ｎｍ厚のポリＳｉ層の表面層を得ることが好ましい。 Alternatively, only the poly-Si layer can be selectively flash flash annealed, eg, Xe lamp flash, or pulsed or continuous wave laser anneal, eg, XeCl excimer laser, Nd: YAG laser optical harmonic modulated far ultraviolet laser and near Irradiate one or both of the ultraviolet laser, visible light laser, infrared laser, etc., or condensing lamp annealing such as ultraviolet lamp such as ultra-high pressure mercury lamp, halogen lamp, xenon lamp, arc lamp such as arc lamp, etc. By recrystallization by heating, cooling in a molten, semi-molten or non-molten state, a surface layer of a poly-Si layer having a thickness of, for example, 50 to 100 nm with arbitrarily controlled crystal grain size is formed. At this time, in the state where the substrate is heated to an appropriate temperature (for example, 200 to 400 ° C.) in order to reduce the film stress, the intensity of irradiation with flash lamp, laser, or condenser lamp for recrystallization (depth from the surface of the poly-Si layer) It is preferable to obtain a surface layer of a poly-Si layer having an arbitrary electron / hole mobility, for example, a thickness of 50 to 100 nm, by adjusting an arbitrary crystal grain size.
この時に、ポリＳｉ層にＧｅ（ゲルマニウム）、Ｓｎ（錫）、Ｐｂ（鉛）等の四族元素の少なくとも１種をイオン注入またはイオンドーピングで適量（合計が例えば１０１７〜１０２２ａｔｏｍ／ｃｃ、好ましくは１０１８〜１０２０ａｔｏｍ／ｃｃ）含有させ、この状態で前記の固相成長、フラッシュランプアニール、パルス状または連続波レーザーアニール、集光ランプアニールなどで再結晶化させると、結晶化を促進すると共に、例えばポリＳｉ薄膜の結晶粒界（グレインバウンダリー）に存在する不整を低減し、その膜ストレスを低減して高キャリア移動度、高品質のポリＳｉＴＦＴが得られ易くなる。 At this time, an appropriate amount (for example, a total of 10 17 to 10 22 atoms / cc) of at least one group IV element such as Ge (germanium), Sn (tin), and Pb (lead) is implanted into the poly-Si layer by ion implantation or ion doping. , Preferably 10 18 to 10 20 atoms / cc), and in this state, recrystallization is performed by the solid phase growth, flash lamp annealing, pulsed or continuous wave laser annealing, condensing lamp annealing, and the like. For example, it is possible to reduce irregularities existing in the grain boundaries of the poly-Si thin film, and to reduce the film stress and to easily obtain a high-mobility, high-quality poly-Si TFT.
ところで、この四族元素はイオン注入又はイオンドーピングによりアモルファスＳｉ膜または／およびポリＳｉ層中に含有させることが出来る。
また、ＣＶＤでのＳｉエピタキシャル成長またはプラズマＣＶＤ、熱ＣＶＤでの成膜時に、原料ガス中にガス成分として混合してアモルファスＳｉまたは／およびポリＳｉ層及び単結晶Ｓｉ膜中に四族元素、例えばＧｅ、錫などを含有させてもよい。
By the way, this group 4 element can be contained in the amorphous Si film and / or the poly-Si layer by ion implantation or ion doping.
In addition, at the time of Si epitaxial growth by CVD or film formation by plasma CVD or thermal CVD, it is mixed as a gas component in the source gas, and a group IV element such as Ge in the amorphous Si or / and poly Si layer and single crystal Si film is mixed. Further, tin or the like may be contained.
あるいは、単結晶Ｓｉ層の表示領域を除去して透明絶縁層を露出させ、プラズマＣＶＤ、熱ＣＶＤ、スパッタリング、蒸着などにより透明絶縁層とアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層を形成し、少なくとも周辺回路領域のアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層を除去し、表示領域にアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層を、周辺回路領域に単結晶Ｓｉ層をそれぞれ形成し、必要に応じてフラッシュランプアニール法または固相成長法またはレーザーアニール法または集光ランプアニール法などにより結晶粒径（電子・正孔移動度）を任意に制御したポリＳｉ層あるいはアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層に表示素子部を、周辺回路領域の単結晶Ｓｉ層に周辺回路部をそれぞれ形成してもよい。 Alternatively, the display region of the single crystal Si layer is removed to expose the transparent insulating layer, and the transparent insulating layer and the amorphous Si layer or amorphous Si and poly Si mixed layer or poly Si layer are exposed by plasma CVD, thermal CVD, sputtering, vapor deposition, or the like. And at least the amorphous Si layer or amorphous Si and poly Si mixed layer or poly Si layer in the peripheral circuit area is removed, and the amorphous Si layer or amorphous Si and poly Si mixed layer or poly Si layer is removed in the display area. A single crystal Si layer is formed in each region, and the crystal grain size (electron / hole mobility) is arbitrarily set by flash lamp annealing method, solid phase growth method, laser annealing method or condensing lamp annealing method as necessary. Controlled poly-Si layer or amorphous Si layer or amorphous Si and poly-Si mixed layer in the display element unit, a peripheral circuit section in the single-crystal Si layer of the peripheral circuit region may be formed respectively.
または、単結晶Ｓｉ層の表示領域を除去して透明絶縁層を露出させ、表示領域内の画素表示素子形成領域に遮光性金属層を形成し、プラズマＣＶＤ、熱ＣＶＤ、スパッタリング、蒸着などにより全面に透明絶縁層とアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層を形成し、少なくとも周辺回路領域のアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層を除去し、表示領域の遮光性金属層上にアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層をそれぞれ形成し、必要に応じてフラッシュランプアニール法または固相成長法またはレーザーアニール法または集光ランプアニール法などにより結晶粒径（電子・正孔移動度）を任意に制御したポリＳｉ層あるいはアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層に表示素子部を、周辺回路領域の単結晶半導体層に周辺回路部をそれぞれ形成してもよい。 Alternatively, the display region of the single crystal Si layer is removed to expose the transparent insulating layer, and a light-shielding metal layer is formed in the pixel display element formation region in the display region, and the entire surface is formed by plasma CVD, thermal CVD, sputtering, vapor deposition, or the like. Forming a transparent insulating layer and an amorphous Si layer or an amorphous Si and poly-Si mixed layer or a poly-Si layer, and removing at least the amorphous Si layer or the amorphous Si and poly-Si mixed layer or the poly-Si layer in the peripheral circuit region; An amorphous Si layer or an amorphous Si and poly-Si mixed layer or a poly-Si layer is formed on the light-shielding metal layer, and a flash lamp annealing method, a solid phase growth method, a laser annealing method, or a condensing lamp annealing method as required. Poly S with arbitrarily controlled crystal grain size (electron / hole mobility) The display element portion in a layer or an amorphous Si layer or amorphous Si and poly-Si mixed layer, the peripheral circuit portion to the single crystal semiconductor layer in the peripheral circuit region may be formed respectively.
さらに、表示領域の遮光性金属層上のアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層またはポリＳｉ層のみを選択的に四族元素（Ｓｉ、Ｇｅ、錫、鉛など）の少なくとも１種のイオン注入またはイオンドーピングした後に、必要に応じてフラッシュランプアニール法または固相成長法またはレーザーアニール法または集光ランプアニール法などにより結晶粒径（電子・正孔移動度）を任意に制御した表示領域のポリＳｉ層あるいはアモルファスＳｉ層またはアモルファスＳｉ及びポリＳｉ混在層非晶質半導体層に表示素子部を、周辺回路領域の単結晶Ｓｉ層に周辺回路部をそれぞれ形成してもよい。 Further, the amorphous Si layer or the amorphous Si and poly-Si mixed layer or the poly-Si layer only on the light-shielding metal layer in the display area is selectively selectively at least one kind of ions of group 4 elements (Si, Ge, tin, lead, etc.). Display area in which the crystal grain size (electron / hole mobility) is arbitrarily controlled after implantation or ion doping by flash lamp annealing method, solid phase growth method, laser annealing method, condensing lamp annealing method, etc. The display element portion may be formed in the poly Si layer, the amorphous Si layer, the amorphous Si and poly Si mixed layer amorphous semiconductor layer, and the peripheral circuit portion may be formed in the single crystal Si layer in the peripheral circuit region.
尚、アモルファスＳｉは原料ガスとして水素化物原料のモノシラン（ＳｉＨ4）、ジシラン（Ｓｉ2Ｈ6）、トリシラン（Ｓｉ3Ｈ8）、ＳｉＨ2Ｆ2等を用い、プラズマＣＶＤ法により常温〜３００℃の１３．５６ＭＨｚでの高周波放電中で分解させることによりＨを含むアモルファスＳｉ膜を形成する。
また、６００℃がポリＳｉとアモルファスＳｉの境界なので、５８０℃以下のホットウオール減圧ＣＶＤ装置での熱ＣＶＤによりＨを含まないアモルファスＳｉ膜を形成してもよい。
Amorphous Si uses monosilane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), SiH 2 F 2 or the like as a hydride raw material as a raw material gas, and is at room temperature to 300 ° C. by plasma CVD. The amorphous Si film containing H is formed by decomposing in a high frequency discharge at 13.56 MHz.
Further, since 600 ° C. is the boundary between poly-Si and amorphous Si, an amorphous Si film not containing H may be formed by thermal CVD using a hot wall low pressure CVD apparatus at 580 ° C. or lower.
ところで、電子移動度を高める手段の１つとして、チャネル半導体層に歪み印加する技術が知られている。
これは、チャネル半導体層に歪みをかけると、そのバンド構造が変化し、その結果、縮退が解けて電子散乱が抑制されるので電子移動度を高めることが出来る。
具体的には、単結晶Ｓｉ基板上にＳｉよりも格子定数の大きい材料からなる混晶層の歪み印加の単結晶半導体層、例えば、Ｇｅ濃度２０〜３０％の単結晶ＳｉＧｅ混晶層（以下、ＳｉＧｅ層と称する）を形成し、このＳｉＧｅ層上にチャネル半導体層としての単結晶Ｓｉ層を形成すると、格子定数の違いにより、歪みのかかった単結晶Ｓｉ層（以下、歪みＳｉ層と称する。）が形成される。この歪みＳｉ層を用いると、無歪みＳｉ層を用いた場合に比べ約１．７６倍の大幅な電子移動度の向上を達成できることが報告されている。（Ｊ．Welser，J．L．Hoyt，S．Takagi，and J．F．Gibbons，ＩＥＤＭ94-373）
By the way, as one of means for increasing electron mobility, a technique for applying strain to a channel semiconductor layer is known.
This is because when the channel semiconductor layer is distorted, the band structure is changed. As a result, degeneration is solved and electron scattering is suppressed, so that the electron mobility can be increased.
Specifically, a strained single crystal semiconductor layer made of a material having a lattice constant larger than that of Si on a single crystal Si substrate, for example, a single crystal SiGe mixed crystal layer (hereinafter referred to as a Ge concentration 20-30%) And a single crystal Si layer as a channel semiconductor layer formed on the SiGe layer, a strained single crystal Si layer (hereinafter referred to as a strained Si layer) due to a difference in lattice constant. .) Is formed. It has been reported that the use of this strained Si layer can achieve a significant improvement in electron mobility of about 1.76 times compared to the case of using an unstrained Si layer. (J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, IEDM 94-373)
そこで、例えば、Ｇｅ濃度２０〜３０％のＳｉＧｅ層である歪み印加の単結晶半導体層としての単結晶Ｓｉ層１２を形成し、その上に歪みＳｉ層を形成すると、従来の無歪みチャネル層の単結晶Ｓｉ層に比べ約１．７６倍の大幅な電子移動度の向上を達成したＭＯＳＴＦＴの表示素子部及び周辺回路部が実現するので、高性能、高精細、高品質の透過型ＬＣＤが実現する。
このＧｅ組成比は大きい方が良く、０．２を大きく下回る場合はＭＯＳＴＦＴの移動度の顕著な向上は期待できず、また、０．５を大きく超える場合はＳｉＧｅ層表面凹凸の増加や膜質低下等の問題があり、０．３程度が好ましい。
また、Ｇｅ濃度はＳｉＧｅ層の中で徐徐に増加させ、表面で所望濃度例えばＧｅ濃度２０〜３０％となる傾斜組成とし、この傾斜組成のＳｉＧｅ層上に歪Ｓｉ層を形成することが好ましい。
Therefore, for example, when a single
This Ge composition ratio should be large. If the Ge composition ratio is much lower than 0.2, no significant improvement in the mobility of the MOSTFT can be expected. If it exceeds 0.5, the surface roughness of the SiGe layer increases and the film quality decreases. About 0.3 is preferable.
In addition, it is preferable that the Ge concentration is gradually increased in the SiGe layer so as to have a gradient composition having a desired concentration, for example, a Ge concentration of 20 to 30% on the surface, and a strained Si layer is formed on the SiGe layer having this gradient composition.
尚、ＳｉＧｅ層の成膜方法としては、ＣＶＤ法、ＭＢＥ法等のエピタキシャル成長法や、ＬＰＥ（Liqud Phase Epitaxy）法等の液相成長法、ポリＳｉＧｅ層やアモルファスＳｉＧｅ層の固相成長法などがあるが、Ｇｅ組成比の制御が可能な結晶成長方法であれば、他の成長方法でもよい。
また、Ｓｉ原料としては水素化物原料のモノシラン（ＳｉＨ４）、ジシラン（Ｓｉ２Ｈ６）、トリシラン（Ｓｉ３Ｈ８）、テトラシラン（Ｓｉ４Ｈ１０）や、ハロゲン化物原料のジクロルシラン（ＳｉＨ2Ｃｌ2）、トリクロルシラン（ＳｉＨＣｌ3）、四塩化ケイ素（ＳｉＣｌ４）など、Ｇｅ原料としてはゲルマン（ＧｅＨ４）、四塩化ゲルマニウム（ＧｅＣｌ４）、四フッ化ゲルマニウム（ＧｅＦ４）などが適している。
In addition, as a film formation method of the SiGe layer, an epitaxial growth method such as a CVD method or an MBE method, a liquid phase growth method such as an LPE (Liqud Phase Epitaxy) method, a solid phase growth method of a poly SiGe layer or an amorphous SiGe layer, or the like. However, any other growth method may be used as long as the crystal growth method can control the Ge composition ratio.
Moreover, as Si raw materials, monosilane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), tetrasilane (Si 4 H 10 ) as hydride raw materials, and dichlorosilane (SiH 2 Cl) as halide raw materials. 2 ), trichlorosilane (SiHCl 3 ), silicon tetrachloride (SiCl 4 ), etc., germanium (GeH 4 ), germanium tetrachloride (GeCl 4 ), germanium tetrafluoride (GeF 4 ), etc. are suitable as Ge raw materials. .
尚、歪み印加の単結晶半導体層としてＳｉＧｅ層の代わりに、ＳｉＣやＳｉＮ等のようにＳｉと他の元素との混晶層、ＺｎＳｅ層等の２−６族混晶層もしくはＧａＡｓやＩｎＰ等の３−５族混晶層などの互いに格子定数の異なる材料からなる混晶層でもよい。 As a single crystal semiconductor layer to which strain is applied, instead of the SiGe layer, a mixed crystal layer of Si and other elements such as SiC or SiN, a 2-6 group mixed crystal layer such as a ZnSe layer, GaAs, InP, or the like A mixed crystal layer made of materials having different lattice constants, such as a Group 3-5 mixed crystal layer, may be used.
つまり、本実施例の場合、ＳｉＧｅ層を多孔質Ｓｉ層上に形成した種子基板と、光学研磨ダメージをエッチングして透明絶縁層を形成した石英ガラスの支持基板を貼り合せ、多孔質Ｓｉ層から種子基板を分離し、表示領域のＳｉＧｅ層をエッチングして透明絶縁層を露出させ、水素アニールのエッチングとＳｉエピタキシャル成長により表示領域にポリＳｉ層を形成し、周辺回路領域にＳｉＧｅ層をシードに歪Ｓｉ層を形成することにより、高性能、高精細、高品質の透過型ＬＣＤが実現する。 That is, in the case of this example, a seed substrate in which a SiGe layer is formed on a porous Si layer and a quartz glass support substrate in which a transparent insulating layer is formed by etching optical polishing damage are bonded together, and then the porous Si layer is used. The seed substrate is separated, the SiGe layer in the display region is etched to expose the transparent insulating layer, a poly-Si layer is formed in the display region by hydrogen annealing etching and Si epitaxial growth, and the SiGe layer is strained as a seed in the peripheral circuit region. By forming the Si layer, a high-performance, high-definition, high-quality transmissive LCD is realized.
このように、ＳｉＧｅ層などの歪み印加単結晶半導体層上に形成した歪みＳｉ層などの歪みチャネル半導体層はそのバンド構造が変化し、その結果、縮退が解けて電子散乱が抑制され、更に電子移動度を高めることが出来るので、例えば無歪みチャンネル層の単結晶Ｓｉ層に比べ約１．７６倍の大幅な高い電子移動度が実現し、高い電子・正孔移動度で高い駆動能力を有するＭＯＳＴＦＴの表示素子部及び周辺回路部からなる高性能、高精細、高品質の電気光学表示装置が可能となる。 Thus, the band structure of the strained channel semiconductor layer such as the strained Si layer formed on the strain-applying single crystal semiconductor layer such as the SiGe layer changes, and as a result, the degeneration is solved and the electron scattering is suppressed, and the electron scattering is further suppressed. Since the mobility can be increased, for example, a significantly high electron mobility of about 1.76 times that of a single crystal Si layer of an unstrained channel layer is realized, and a high driving capability is achieved with high electron / hole mobility. A high-performance, high-definition, and high-quality electro-optic display device including a MOSTFT display element portion and a peripheral circuit portion is possible.
（８）表示領域の透明絶縁層を介した遮光性金属層上の表示素子部（以後、ＴＦＴ部とも称する）以外のポリＳｉ膜をＳＦ６，ＣＦ４等のプラズマエッチング、反応性イオンエッチング等で除去した後に、汎用技術により表示領域のポリＳｉ層に表示素子のＴＦＴ７１や配線などを、周辺回路領域の高結晶性単結晶Ｓｉ層または歪みＳｉ層１５内にＬＣＤ周辺回路部７０としての単結晶ＳｉＴＦＴまたは歪みＳｉＴＦＴ、ダイオード、抵抗、キャパシタ、コイルや配線等の半導体素子および半導体集積回路のいずれかまたは両方をそれぞれ作製して超薄型電気光学表示素子基板層（以後、超薄型ＴＦＴ基板層とも称する）を形成する。（図５参照、なお、図５(ａ)は表示領域のＴＦＴ部及び画素開口部を示し、図５(ｂ)は周辺回路部の周辺回路領域を示している）。
(8) Plasma etching of SF 6 , CF 4 , reactive ion etching, etc. on a poly Si film other than the display element part (hereinafter also referred to as TFT part) on the light-shielding metal layer via the transparent insulating layer in the display area After the removal, the
なお、高結晶性単結晶Ｓｉ層または歪みＳｉ層１５は、単結晶Ｓｉ基板または歪みＳｉ基板同様の高い電子・正孔移動度を有するので、周辺駆動回路のみならず映像信号処理回路、画質補正回路、メモリ回路、ＣＰＵ（Central Processing Unit）回路やＤＳＰ（Digital Signal Processor）回路などのシステムＬＳＩを取り込んでもよい。また、同時に、超薄型ＴＦＴ基板層の周辺回路に接続する外部取り出し電極（半田バンプ含む）６５を形成するが、ＬＣＤパネル形成後に異方性導電膜接合や超音波接合、半田付けなどでフレキシブル基板との接合やＰＣＢ（Printed Circuit Board）へのマウントを行うのが好ましい。なお、ダイオード、抵抗、キャパシタ、コイルや配線等については図示を省略している。
尚、外部取り出し電極に半田などのバンプを形成する場合は、対向基板の厚み以下のバンプ高さとすることが好ましい。
この時に、高結晶性単結晶Ｓｉ層または歪みＳｉ層に多層配線構造の周辺回路または表示部及び周辺回路を形成することで、集積度を高めて高精細、高機能、高品質で安価な超薄型電気光学表示装置が実現する。
更に、シール領域の高結晶性単結晶Ｓｉ層または歪みＳｉ層にも周辺回路を形成することで、ＬＣＤパネルサイズシュリンクによるウエーハ１枚当たりの取り個数が増加してコストダウンが実現する。
Note that the high crystalline single crystal Si layer or
In addition, when bumps, such as solder, are formed in an external extraction electrode, it is preferable to make it the bump height below the thickness of a counter substrate.
At this time, by forming a peripheral circuit or a display unit and a peripheral circuit of a multilayer wiring structure in a highly crystalline single crystal Si layer or a strained Si layer, the degree of integration is increased and high-definition, high-function, high-quality and inexpensive super A thin electro-optic display device is realized.
Furthermore, by forming peripheral circuits also in the highly crystalline single crystal Si layer or strained Si layer in the seal region, the number of wafers taken per wafer by the LCD panel size shrink increases, thereby realizing cost reduction.
（９）全面にＳｉＯ２層１７及び低反射金属膜１８（ＷＳｉ，Ｔｉ，Ｃｒ，Ｍｏ等の金属膜が好ましい）を形成し、表示領域のＴＦＴ上及び側部以外の低反射金属膜をエッチングし、表示領域の画素開口部を埋める光透過性材料としての透明樹脂またはガラス膜１９を形成し、ＣＭＰなどにより表面平坦化する。なお、低反射金属膜はアース電位にしておくことで、強い入射光による各部のチャージアップを防止し、ＴＦＴのリーク電流を防止することができる。
尚、ポリＳｉＴＦＴ上の金属膜１８を残してポリＳｉＴＦＴ部の電極接続部（ドレインなど）のみ窓開けしてポリＳｉＴＦＴ部の上、横、下側、つまりポリＳｉＴＦＴ部を金属膜で覆って遮光するのが好ましい。
(9) A SiO 2 layer 17 and a low reflection metal film 18 (preferably a metal film such as WSi, Ti, Cr, Mo, etc.) are formed on the entire surface, and the low reflection metal film on the TFT in the display area and other than the side is etched. Then, a transparent resin or
Note that the
[１]まず、ＣＶＤ、スパッタリング、蒸着法などにより、全面に５０〜２００ｎｍ厚の透明絶縁膜１７（例えばＳｉＯ2層１３ｂ、ＳｉＮｘとＳｉＯ2の積層膜、ＳｉＯ2とＳｉＮｘとＳｉＯ2の積層膜、ＳｉＯＮなど）および１００〜３００ｎｍ厚の遮光性金属層１８をそれぞれ順に形成する。なお、低反射金属膜はＷＳｉ以外のＴｉ，Ｃｒ，Ｍｏ，Ｍｏ−Ｔａその他でもよい。
[1] First, a transparent insulating
[２]続いて、ポリＳｉＴＦＴ部の電極接続部（ドレイン、ソース、ゲートなど）、画素開口部底、周辺回路領域等の低反射金属膜例えばＷＳｉ膜をＣＣｌ4などのプラズマエッチング、或いは酸系エッチング液によりウエットエッチングして、ＴＦＴ部の上及び側部をＷＳｉ膜で覆う。
尚、周辺回路部上に形成された透明絶縁膜及び金属膜はエッチングせずにすることで、強い入射光の漏れを遮光するのでＴＦＴリーク電流を防止してもよい。
要は、プロジェクタ用ＬＣＤのように強い入射光が入射する場合は、画素開口部以外は遮光膜で覆うことが望ましい。
[2] Subsequently, the electrode connecting portions of the poly SiTFT portion (drain, source, gate, etc.), the pixel aperture bottom, plasma etching of the low-reflection metal film, for example WSi film such as the peripheral circuit region, such as CCl 4, or acid-based Wet etching is performed with an etching solution to cover the upper and side portions of the TFT portion with a WSi film.
The transparent insulating film and the metal film formed on the peripheral circuit portion are not etched so that strong incident light leakage is shielded, so that TFT leakage current may be prevented.
In short, when strong incident light is incident as in a projector LCD, it is desirable to cover a portion other than the pixel opening with a light shielding film.
[３]（１）有機溶剤に分散させた低温用微粉末ガラスパウダーを塗布して画素開口部に充填し、適当な温度（例えば５００℃）で溶融させてガラス厚膜を形成する（２）ＣＶＤにより、ＰＳＧ，ＢＰＳＧ，ＢＳＧで画素開口部を埋める（３）スパッタリングによりＳｉＯ２で画素開口部を埋める（４）透明樹脂をスピンコートなどで塗布し、所定のＵＶ照射または／及び加熱条件で硬化させる等の方法によって、全面に透明樹脂またはガラス膜１９を例えば５〜１０μｍ形成し、画素開口部を埋め込む。その後、ＣＭＰ等により所定膜厚に表面平坦化する。
[3] (1) A low-temperature fine powdery glass powder dispersed in an organic solvent is applied, filled in the pixel openings, and melted at an appropriate temperature (for example, 500 ° C.) to form a thick glass film (2) Fill the pixel opening with PSG, BPSG, BSG by CVD (3) Fill the pixel opening with SiO 2 by sputtering (4) Apply a transparent resin by spin coating, etc., and under predetermined UV irradiation or / and heating conditions By a method such as curing, a transparent resin or
（１０）表示領域のポリＳｉＴＦＴ部２０上の透明樹脂またはガラス膜１９に窓開けを行い、ＩＴＯ（Ｉｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ；酸化インジュウム・酸化錫の混合透明導電膜）やＩＺＯ（Ｉｎｄｉｕｍ−Ｚｉｎｃ−Ｏｘｉｄｅ；酸化インジュウム・酸化亜鉛の混合透明導電膜）などの画素電極としての１３０〜１５０ｎｍ厚の透明電極２１などを形成することにより超薄型ＴＦＴ基板層を形成する（図６参照）。
(10) A window is opened in the transparent resin or
（１１）石英ガラス基板３０の超薄型ＴＦＴ基板層と対向基板４０を重ね合わせてシールして空セルを形成する。
(11) The ultrathin TFT substrate layer of the
[１]石英ガラス基板３０上の超薄型ＴＦＴ基板層及び対向基板４０上の透明電極２１，２３にスピンコーティング、ディップコーティング、ロールコーティング等によりポリイミド、ポリアミド等の有機系配向膜材料を塗布し、プレベーク（８０℃、１０分）で溶剤を揮発させた後に、１８０℃で１時間焼成し、ポリイミド、ポリアミド等の膜を５〜５０ｎｍ好ましくは２５〜３５ｎｍ程度を形成した後にバフラビング等の配向処理を行い、必要に応じてＩＰＡ（イソプロピルアルコール）等による有機洗浄を行うことにより、それぞれ配向膜２２，２４を形成する。あるいは、配向膜２２，２４は、ＳｉＯｘなどを斜方蒸着した無機系配向膜としてもよい。
尚、対向基板は反射防止膜無しで直線透過率８０％以上の光学特性を満足する石英ガラス、透明結晶化ガラス（ネオセラム、クリアセラム、ゼロデュアなど）、ほうけい酸ガラス、アルミノけい酸ガラス、マイクロシートガラスや、高い透明性、耐熱性および耐湿性の樹脂フィルムなどで構成され、必要に応じて色フィルタやマイクロレンズアレイなどが形成され、さらに全面に透明電極が形成され、少なくとも１チップごとに配向処理された有機または無機の配向膜が形成されているものとする。
[1] An organic alignment film material such as polyimide or polyamide is applied to the ultra-thin TFT substrate layer on the
In addition, the counter substrate does not have an anti-reflection film, and satisfies the optical characteristics of linear transmittance of 80% or more, crystallized glass, transparent crystallized glass (neoceram, clear serum, zerodur, etc.), borosilicate glass, aluminosilicate glass, micro Consists of sheet glass and highly transparent, heat-resistant and moisture-resistant resin film, etc. Color filters and microlens arrays are formed as needed, and transparent electrodes are formed on the entire surface, at least for each chip It is assumed that an organic or inorganic alignment film subjected to alignment treatment is formed.
[２]石英ガラス基板３０の超薄型ＴＦＴ基板層の１パネルごとにシール剤（図示せず）及びコモン電極剤（図示せず）を塗布し、例えば８インチφの対向基板４０を所定の液晶ギャップ例えば２μｍで重ね合わせて封止固着する、いわゆる面面液晶組立｛基板状態（面）の石英ガラス基板３０と、同じく基板状態（面）の対向基板４０とを重ね合わせてシールする。｝を行う。ただし、液晶注入口（図示せず。）は空けておく。
ところでシール剤とコモン剤は、可視光照射硬化型接着剤、熱硬化併用の可視光照射硬化型接着剤、若しくは紫外線照射硬化型接着剤、熱硬化併用の紫外線照射硬化型接着剤、熱硬化型接着剤のいずれでもよいが、特性及び作業面から同じタイプとするのが好ましい。
具体的なシール剤及びコモン剤は、例えばシール剤及びコモン剤の主成分で硬化後の基本特性を出現する変性アクリレートオリゴマー、液の粘度調整するアクリレートモノマー、可視光硬化またはＵＶ硬化部分を硬化する光開始剤、シール剤及びコモン剤の主成分で硬化後の基本特性を出現するエポキシ樹脂、エポキシ樹脂を硬化させる硬化剤、シール剤中には外気からの水分進入を防ぐ充填フィラー（シリカ真球など）、液晶ギャップ相当のファイバーなどから構成されている。
ＴＦＴ基板チップ内のコモンパッド部に塗布されるコモン剤中には液晶ギャップより大きい（例、液晶ギャップより約１μｍ大きい約３μｍΦ）金メッキ樹脂のミクロパールを混入し、ＴＦＴ基板チップと対向基板チップの重ね合わせ時の加圧でミクロパールが破砕されて、破砕された金メッキ樹脂が双方の透明導電膜を電気的に導通させる。
また、シール領域にポリイミド、ポリアミド等の液晶配向膜がある場合は、その膜を破砕された金メッキ樹脂が貫通して双方の透明導電膜を電気的に導通させるように、ミクロパールの材料、大きさなどを工夫する必要がある。
更に、スピンコーティングなどでＴＦＴ基板チップまたは／及び対向基板チップのシール領域にポリイミド等の有機系液晶配向膜形成されている場合は、シール剤中への外気からの水分進入を防ぐフィラー充填は重要で、ＬＣＤパネルサイズによりフィラー充填率の最適化が必要であり、例えば１インチサイズ程度のプロジェクタ用ＬＣＤパネルでは１０〜３０％程度のフィラー充填率が好ましいが、ディスペンス塗布し易さと水分進入率との兼ね合いで決定するのが好ましい。
この時に超薄型のＴＦＴ基板層内の１チップと対向基板４０間の電気的導通をとる為に、その１チップ内の少なくとも２箇所のコモンパッド部に金メッキ樹脂のミクロパール混入したコモン剤をディスペンサーで塗布する。
また、同様に超薄型のＴＦＴ基板層内の１チップ毎にシール領域に液晶ギャップ相当のファイバー（ギャップ剤）を添加したシール剤を塗布する。
ところでこの時に直視型ＬＣＤの場合は、所定形状及び大きさのマイクロスペーサを全画面内に散布することにより液晶ギャップを確保してもよい。
ここで、超薄型ＴＦＴ基板層や対向基板４０に「少なくとも１チップごと」としたのは、全面に有機または無機の配向膜２２，２４を形成してもよい場合があるからである。また、本明細書中において、超薄型ＴＦＴ基板層の１チップと対向基板４０の１チップを重ね合わせて１パネルのＬＣＤと定義する。
[2] A sealant (not shown) and a common electrode agent (not shown) are applied to each panel of the ultra-thin TFT substrate layer of the
By the way, the sealing agent and the common agent are a visible light irradiation curable adhesive, a thermosetting combined visible light irradiation curable adhesive, or an ultraviolet irradiation curable adhesive, a thermosetting combined ultraviolet irradiation curable adhesive, and a thermosetting type. Any of the adhesives may be used, but the same type is preferable in view of characteristics and work surface.
Specific sealants and common agents include, for example, modified acrylate oligomers that exhibit basic properties after curing with the main components of sealants and common agents, acrylate monomers that adjust the viscosity of the liquid, and curing visible light or UV cured parts. Epoxy resin that exhibits basic properties after curing with the main components of photoinitiator, sealing agent and common agent, curing agent that cures epoxy resin, and filler that prevents moisture from entering from outside air (silica sphere) Etc.) and a fiber corresponding to the liquid crystal gap.
The common agent applied to the common pad portion in the TFT substrate chip is mixed with a gold-plated resin micropearl that is larger than the liquid crystal gap (eg, about 3 μm larger than the liquid crystal gap). The micro pearl is crushed by the pressure applied during the superposition, and the crushed gold plating resin electrically connects both transparent conductive films.
In addition, when there is a liquid crystal alignment film such as polyimide or polyamide in the seal area, the material and size of the micropearl so that both transparent conductive films can be electrically conducted through the crushed gold plating resin. It is necessary to devise such things.
Furthermore, when an organic liquid crystal alignment film such as polyimide is formed in the sealing area of the TFT substrate chip and / or the counter substrate chip by spin coating or the like, it is important to fill the filler to prevent moisture from entering the sealing agent from the outside air Therefore, it is necessary to optimize the filler filling rate depending on the size of the LCD panel. For example, a filler filling rate of about 10 to 30% is preferable for an LCD panel for projectors of about 1 inch size. It is preferable to determine the balance.
At this time, in order to establish electrical continuity between one chip in the ultra-thin TFT substrate layer and the
Similarly, a sealing agent in which a fiber (gap agent) corresponding to a liquid crystal gap is added to the sealing region for each chip in the ultra-thin TFT substrate layer.
By the way, in the case of a direct-view LCD at this time, a liquid crystal gap may be secured by spraying micro spacers having a predetermined shape and size on the entire screen.
Here, the reason why “at least one chip” is used for the ultra-thin TFT substrate layer or the
なお、上記面面液晶組立に対して、透明電極２３が形成され配向処理された有機または無機の配向膜２４が形成された対向基板の良品チップを超薄型のＴＦＴ基板層内の良品チップに選択的に重ね合わせてシールする、いわゆる面単液晶組立（基板状態（面）の石英ガラス基板３０と、チップ状態（単個）の対向基板とを重ね合わせてシールする。）としてもよい。
For the above-mentioned surface liquid crystal assembly, a non-defective chip on the counter substrate on which the
面面液晶組立は不良チップを含むＴＦＴ基板層と、不良チップを含む対向基板層を重ね合わせてシールすることもあるので、不良ＬＣＤパネルが発生し、コストアップとなる可能性がある。これに対して、面単液晶組立は、良品の対向基板チップを超薄型のＴＦＴ基板層内の良品チップに選択的に重ね合わせてシールするので不良ＬＣＤパネル発生が少なく、コストダウンすることができる。 In the surface liquid crystal assembly, since the TFT substrate layer including the defective chip and the counter substrate layer including the defective chip are sometimes overlapped and sealed, a defective LCD panel is generated, which may increase the cost. On the other hand, the surface single liquid crystal assembly selectively seals the non-defective substrate chip with the non-defective TFT chip in the ultra-thin TFT substrate layer, thereby reducing the number of defective LCD panels and reducing the cost. it can.
なお、表示領域のＴＦＴ部に相当する箇所にブラックマスク７３（Ｔｉ，Ｍｏ，Ｃｒ，黒系樹脂など）が形成された対向基板を石英ガラス基板に所定のギャップで重ね合わせて封止固着しても良い（図７参照）。なお、この際に、ブラックマスクはアース電位にしておくことで、強い入射光による各部のチャージアップを防止できる。 A counter substrate on which a black mask 73 (Ti, Mo, Cr, black resin, etc.) is formed at a position corresponding to the TFT portion of the display region is overlaid on a quartz glass substrate with a predetermined gap and sealed and fixed. (See FIG. 7). At this time, by setting the black mask to the ground potential, it is possible to prevent each part from being charged up by strong incident light.
（１２）スクライブライン内の分割境界線に沿って対向基板４０、超薄型ＴＦＴ基板層及び石英ガラス基板３０を切断する。なお、対向基板４０および石英ガラス基板３０の材質に応じてブレードダイシング、レーザー切断加工（炭酸ガスレーザー、ＹＡＧレーザー、エキシマレーザー等の熱加工及びアブレーション加工、Ｎｄ：ＹＡＧレーザー、Ｎｄ：ＹＶＯ4レーザー、Ｎｄ：ＹＬＦレーザー、チタンサファイアレーザー等の多光子吸収改質レーザー加工等）、ダイアモンドカッター、超硬合金カッター、超音波カッター、高圧流体ジェット噴射切断加工、レーザーウオータージェット切断加工などを使い分けて分割切断してもよい。
(12) The
（１３）空セルの液晶注入口から電界印加方法および配向膜に応じた液晶、例えばネマティック液晶｛ＴＮモード液晶、ＶＡ（垂直配向）モード液晶など｝、スメティック液晶（強誘電性液晶、反強誘電性液晶など）、高分子分散型液晶またはその他の液晶を注入封止し、必要に応じて加熱急冷却処理して液晶配向処理することにより透過型ＬＣＤパネルが得られる。
この時に、配向膜と配向処理及び液晶の関係は下記のような組み合わせが好ましい。
[１]５〜５０ｎｍ厚のポリイミド、ポリアミド等の有機系配向膜の場合は、ラビング処理して正の誘電異方性のＴＮモード液晶を用いる。
[２]５〜５０ｎｍ厚のポリイミド、ポリアミド等の垂直配向剤添加した有機系配向膜の場合は、ラビング処理が不要で負の誘電異方性のＴＮモード液晶（ＶＡモード液晶）を用いる。
[３]５〜５０ｎｍ厚のポリイミド、ポリアミド等の有機系配向膜の場合は、アルゴンイオンビームを基板に対して１５〜２０°の角度から３００〜４００ｅＶの加速電圧でイオンビーム照射処理して正の誘電異方性のＴＮモード液晶を用いる。
[４]５〜５０ｎｍ厚のポリイミド、ポリビニルシンナメート等の有機系配向膜の場合は、２５７ｎｍの直線偏光した紫外線を基板に対して垂直に照射する光配向処理して正の誘電異方性のＴＮモード液晶を用いる。
[５]５〜５０ｎｍ厚のポリイミド、ポリアミド等の有機系配向膜の場合は、２６６ｎｍのＹＡＧレーザーを基板に対して任意の角度例えば４５°で照射するレーザー配向処理して正の誘電異方性のＴＮモード液晶を用いる。
[６]シリコン原子と酸素原子が錯体を形成したアルキル基がシリコン原子に結合しているシラン系配向膜の場合は、配向処理が不要であり、負の誘電異方性のＴＮモード（ＶＡモード）液晶を用いる。
[７]アミノシラン系配向膜の場合は、ラビング処理して正の誘電異方性のＴＮモード液晶を用いる。
[８]１０〜３０ｎｍ厚ＳｉＯｘの斜方蒸着膜の無機系系配向膜の場合は、基板の垂直方向からの蒸着角を調整して配向処理を行い、正の誘電異方性のＴＮモード液晶を用いる。
[９]蒸着あるいはスパッタによる１０〜３０ｎｍ厚ＳｉＯｘの無機系系配向膜の場合は、アルゴンイオンビームを基板に対して１５〜２０°の角度から３００〜４００ｅＶの加速電圧でイオンビーム照射処理して正の誘電異方性のＴＮモード液晶を用いる。
[１０]ミラートロンスパッタリング（指向性スパッタリング）による１０〜３０ｎｍ厚ＳｉＯｘの無機系配向膜の場合は、基板に対するスパッタリング角度を調整して配向処理を行い、正の誘電異方性のＴＮモード液晶を用いる。
[１１]ＣＶＤ法による５〜２０ｎｍ厚のＤＬＣ（Diamond Like Carbon）膜の無機系配向膜の場合は、基板に対して例えば４５°の方向から３００〜４００ｅＶの加速電圧でアルゴンイオンビーム照射してイオンビーム配向処理を行い、正の誘電異方性のＴＮモード液晶を用いる。
[１２]上記１〜１１の処理を行った第１配向膜の上に、イオン蒸着により約５０ｎｍのＰＴＦＥ（ポリテトラフルオロエチレン）膜の第２配向膜を形成し、正の誘電異方性のＴＮモード液晶を用いる。
[１３]上記１〜１１の処理を行った第１配向膜の上に、イオン蒸着により約５０ｎｍのＰＥ（ポリエチレン）膜の第２配向膜を形成し、正の誘電異方性のＴＮモード液晶を用いる。
[１４]上記１〜１１の処理を行った第１配向膜の上に、イオン蒸着により約５０ｎｍビフェニルー４，４'−ジメタクリレートのポリマー化した第２配向膜を形成し、正の誘電異方性のＴＮモード液晶を用いる。
[１５]ポリイミド、ポリアミド等の有機系配向膜の場合は、ラビング配向或いは２５７ｎｍ直線偏光ＵＶ照射の光配向或いはアルゴンイオンビーム照射のイオンビーム配向或いは２６６ｎｍのＹＡＧレーザー照射のレーザー配向処理をして強誘電性（ＦＬＣ）液晶を用いる。
[１６]５〜５０ｎｍ厚のポリイミド、ポリアミド等の有機系配向膜の場合は、ラビング配向或いは２５７ｎｍ直線偏光ＵＶ照射の光配向或いはアルゴンイオンビーム照射のイオンビーム配向或いは２６６ｎｍのＹＡＧレーザー照射のレーザー配向処理をして電界効果複屈折型（ＥＣＢ）型液晶を用いる。
(13) Liquid crystal according to the method of applying an electric field and the alignment film from the liquid crystal inlet of the empty cell, such as nematic liquid crystal {TN mode liquid crystal, VA (vertical alignment) mode liquid crystal}, smectic liquid crystal (ferroelectric liquid crystal, antiferroelectric) Liquid crystal or the like), polymer dispersion type liquid crystal or other liquid crystal is injected and sealed, and if necessary, heating and quenching treatment is performed and liquid crystal alignment treatment is performed to obtain a transmissive LCD panel.
At this time, the following combinations of the alignment film, the alignment treatment, and the liquid crystal are preferable.
[1] In the case of an organic alignment film such as polyimide or polyamide having a thickness of 5 to 50 nm, a TN mode liquid crystal having a positive dielectric anisotropy is used after rubbing.
[2] In the case of an organic alignment film to which a vertical alignment agent such as polyimide or polyamide having a thickness of 5 to 50 nm is added, a rubbing treatment is unnecessary and a TN mode liquid crystal (VA mode liquid crystal) having negative dielectric anisotropy is used.
[3] In the case of an organic alignment film such as polyimide and polyamide having a thickness of 5 to 50 nm, an argon ion beam is irradiated with an ion beam at an acceleration voltage of 300 to 400 eV from an angle of 15 to 20 ° with respect to the substrate. TN mode liquid crystal having a dielectric anisotropy of
[4] In the case of an organic alignment film such as polyimide and polyvinyl cinnamate having a thickness of 5 to 50 nm, a positive dielectric anisotropy is obtained by photo-alignment treatment by irradiating the substrate with 257 nm linearly polarized ultraviolet rays perpendicularly. A TN mode liquid crystal is used.
[5] In the case of an organic alignment film such as polyimide or polyamide having a thickness of 5 to 50 nm, positive dielectric anisotropy is obtained by laser alignment treatment in which a YAG laser of 266 nm is irradiated to the substrate at an arbitrary angle, for example, 45 ° TN mode liquid crystal.
[6] In the case of a silane-based alignment film in which an alkyl group in which a silicon atom and an oxygen atom form a complex is bonded to a silicon atom, no alignment treatment is required, and a negative dielectric anisotropy TN mode (VA mode) ) Use liquid crystal.
[7] In the case of an aminosilane-based alignment film, a TN mode liquid crystal having a positive dielectric anisotropy is used after rubbing.
[8] In the case of an inorganic alignment film of a 10-30 nm thick SiOx obliquely deposited film, a TN mode liquid crystal having positive dielectric anisotropy is prepared by adjusting the deposition angle from the vertical direction of the substrate. Is used.
[9] In the case of an inorganic alignment film having a thickness of 10 to 30 nm by vapor deposition or sputtering, an argon ion beam is irradiated with an ion beam at an acceleration voltage of 300 to 400 eV from an angle of 15 to 20 ° with respect to the substrate. A TN mode liquid crystal having positive dielectric anisotropy is used.
[10] In the case of an inorganic alignment film having a thickness of 10 to 30 nm by mirrortron sputtering (directional sputtering), an alignment treatment is performed by adjusting the sputtering angle with respect to the substrate, and a TN mode liquid crystal having positive dielectric anisotropy is obtained. Use.
[11] In the case of an inorganic alignment film of DLC (Diamond Like Carbon) film having a thickness of 5 to 20 nm by a CVD method, the substrate is irradiated with an argon ion beam at an acceleration voltage of 300 to 400 eV from a direction of 45 °, for example. An ion beam alignment process is performed, and a TN mode liquid crystal having positive dielectric anisotropy is used.
[12] A second alignment film of PTFE (polytetrafluoroethylene) film having a thickness of about 50 nm is formed on the first alignment film subjected to the above-described
[13] A second alignment film of PE (polyethylene) film having a thickness of about 50 nm is formed on the first alignment film subjected to the
[14] A second alignment film polymerized with about 50 nm biphenyl-4,4′-dimethacrylate is formed by ion deposition on the first alignment film subjected to the
[15] In the case of an organic alignment film such as polyimide or polyamide, a strong rubbing alignment, photoalignment of 257 nm linearly polarized UV irradiation, ion beam alignment of argon ion beam irradiation, or laser alignment of 266 nm YAG laser irradiation Dielectric (FLC) liquid crystal is used.
[16] In the case of organic alignment films such as polyimide and polyamide having a thickness of 5 to 50 nm, rubbing alignment, photo-alignment of 257 nm linearly polarized UV irradiation, ion beam alignment of argon ion beam irradiation, or laser alignment of 266 nm YAG laser irradiation A field effect birefringence (ECB) type liquid crystal is used after processing.
（１４）透過型ＬＣＤパネルの外部取り出し電極にフレキシブル基板２５を異方性導電膜の熱圧着で取り付ける。
さらに少なくとも片面に反射防止膜２６を形成した直線透過率９５％以上などの光学特性を満足する１（Ｗ／ｍ・Ｋ）以上の高熱伝導性ガラス例えば石英ガラス、透明結晶化ガラス（ネオセラム、クリアセラム、ゼロデュアなど）など、更に少なくとも片面に反射防止膜２６を形成した直線透過率９５％以上などの光学特性を満足する１０（Ｗ／ｍ・Ｋ）以上の高い熱伝導性ガラス、例えば高透光性セラミック多結晶体｛酸化物結晶体の電融または焼結ＭｇＯ（マグネシア）、Ｙ２Ｏ３（イットリア）、ＣａＯ（カルシア）、ＡＬ２Ｏ３（単結晶サファイア）、ＢｅＯ（ベリリア）、多結晶サファイアなど、または複酸化物結晶体の単結晶または多結晶ＹＡＧ（Yttrium Aluminum Garnet）、単結晶または多結晶ＭｇＡｌ２Ｏ４（スピネル）、３Ａｌ２Ｏ３・２ＳｉＯ２、Ａｌ２Ｏ３・ＳｉＯ２など｝、フッ化物単結晶体（フッ化カルシウム、フッ化マグネシウム、フッ化バリウムなど）、気相合成ダイヤモンド膜コートした高透光性セラミック多結晶体またはフッ化物単結晶体または透明結晶化ガラス、水晶などの透明基板を耐光性のＵＶ照射硬化型または可視光照射硬化型透明接着剤などで対向基板チップとＴＦＴチップに貼り合せる。
これにより、例えば入射側より反射防止膜形成の単結晶サファイア防塵ガラス、単結晶サファイアの対向基板（（マイクロレンズ基板、ブラックマスク基板なども含む）、液晶層、超薄型電気光学表示素子基板、石英ガラス基板及び反射防止膜形成の単結晶サファイア防塵ガラスの構造として相互を耐光性の透明接着剤で貼り合せることで、更に高い熱放散効果を期待できる。
(14) The
Further, a high thermal conductive glass of 1 (W / m · K) or more satisfying optical characteristics such as a linear transmittance of 95% or more with an
Thereby, for example, a single crystal sapphire dust-proof glass formed with an antireflection film from the incident side, a single crystal sapphire counter substrate (including a microlens substrate, a black mask substrate, etc.), a liquid crystal layer, an ultra-thin electro-optic display element substrate, A higher heat dissipation effect can be expected by laminating the quartz glass substrate and the single crystal sapphire dustproof glass formed with the antireflection film together with a light-resistant transparent adhesive.
（１５）その後、透過型ＬＣＤパネルを高熱伝導性モールド樹脂２８で、光の入射側に反射膜２９が形成された金属膜コートの樹脂枠（以下、メッキ樹脂枠とも称する）７４に取り付けることによって、図８で示す様な透過型ＬＣＤを得ることができる。
この時に高い放熱効果を期待する樹脂枠の金属膜コートは、無電解メッキ法、電解メッキ法、蒸着法あるいはスパッタリング法などにより行い、金属単層膜（例えば、銅層、ニッケル層、クロム層等）であっても異種金属多層膜（例えば、銅層、ニッケル層及びクロム層あるいはニッケル層及びクロム層あるいは銅層及びクロム層等）であっても良い。
例えば、金属メッキ樹脂枠の場合には金属メッキし易い材料、例えばポリカーボネート樹脂、ＡＢＳ／ポリカーボネート樹脂、ＰＰＳ樹脂、ＬＣＰ樹脂などで成形した樹脂枠に金属メッキが形成された枠体を形成する。
そして更に放熱効果を高める為に、樹脂材料は複合材料、即ち、熱伝導率の高いカーボン、金属（鉄、ステンレスなどの鉄合金、アルミニウム、アルミニウム合金、ニッケル、ニッケル合金、銅、銅合金、クロム等）、金属酸化物{ＩＴＯ（酸化インジュウム−酸化スズ混合酸化物）、酸化錫、酸化亜鉛、ＩＺＯ（酸化インジュウム−酸化亜鉛混合酸化物）等}等の微粉末フィラーまたは微細ファイバーまたは微粉末フィラー及び微細ファイバーを適量含有させたポリカーボネート、ＰＰＳ、ＬＣＰ等の高熱伝導性樹脂で成形した樹脂枠に、金属メッキ処理したメッキ樹脂枠でもよい。
尚、微粉末フィラーまたは微細ファイバーまたは微粉末フィラー及び微細ファイバーの含有量は、所望の熱伝導度と機械的強度などで決まり、更に混合させる材料により異なるので適正化する必要がある。
ところで、上記の黒色系複合材料のみにより十分な熱伝導性の放熱効果と機械的強度及び光反射の写り込み防止が得られれば、必ずしも黒色系金属膜コート処理する必要はなく、そのままの樹脂枠で使用するのがコストダウン出来るので好ましい。
また、いずれも光反射の写り込み防止の為に、枠体の少なくとも内側部の最表面は黒色系金属膜、例えばクロムメッキ膜または酸化クロムメッキ膜またはクロム蒸着膜またはクロムスパッタリング膜または酸化クロム蒸着膜または酸化クロムスパッタリング膜、或いは黒色系高熱伝導性樹脂或いは黒色系高熱伝導性樹脂表面への透明樹脂コート処理であることが好ましい。
更に、枠体の外側部の光入射側が黒いと光吸収により枠体温度上昇するので、枠体の外側部の光入射側はアルミニウム、ニッケル等の白色系反射膜を形成する必要がある。
また、樹脂枠体芯部表面に凹凸形状部またはフィン形状部または凹凸形状部及びフィン形状部が形成されることが好ましい。これによって、樹脂枠体芯部と金属膜との密着性が向上し、かつ枠体の露出表面積を多くすることにより空中への放熱面積を増大することができる。
尚、アルマイト黒化処理のアルミニウム材などでの金属枠を使用してもよい。この金属枠の場合でも表面に凹凸形状部またはフィン形状部または凹凸形状部及びフィン形状部を形成することで、空中への放熱面積を増大させて冷却効果を高めるのが好ましい。
(15) After that, by attaching the transmissive LCD panel to the resin frame (hereinafter also referred to as a plating resin frame) 74 of a metal film coat in which the
At this time, the metal film coating of the resin frame that is expected to have a high heat dissipation effect is performed by an electroless plating method, an electrolytic plating method, a vapor deposition method or a sputtering method, and a metal single layer film (for example, a copper layer, a nickel layer, a chromium layer, etc.) ) Or different metal multilayer films (for example, copper layer, nickel layer and chromium layer, nickel layer and chromium layer, copper layer and chromium layer, etc.).
For example, in the case of a metal-plated resin frame, a frame body in which metal plating is formed on a resin frame formed of a material that is easily metal-plated, such as polycarbonate resin, ABS / polycarbonate resin, PPS resin, or LCP resin, is formed.
And in order to further enhance the heat dissipation effect, the resin material is a composite material, that is, carbon having a high thermal conductivity, metal (iron alloy such as iron and stainless steel, aluminum, aluminum alloy, nickel, nickel alloy, copper, copper alloy, chromium) Etc.), metal oxide {ITO (indium oxide-tin oxide mixed oxide), tin oxide, zinc oxide, IZO (indium oxide-zinc oxide mixed oxide), etc.} etc. fine powder filler or fine fiber or fine powder filler Also, a plated resin frame obtained by performing metal plating on a resin frame formed of a high thermal conductive resin such as polycarbonate, PPS, or LCP containing an appropriate amount of fine fibers may be used.
The content of fine powder filler or fine fiber or fine powder filler and fine fiber is determined by the desired thermal conductivity and mechanical strength, and further varies depending on the material to be mixed, so it needs to be optimized.
By the way, if sufficient heat conductive heat radiation effect and mechanical strength and light reflection prevention can be obtained only by the above black composite material, it is not always necessary to perform the black metal film coating treatment, and the resin frame as it is. It is preferable to use it because the cost can be reduced.
In addition, in order to prevent reflection of light reflection, at least the innermost surface of the frame body is a black metal film, for example, a chromium plating film, a chromium oxide plating film, a chromium deposition film, a chromium sputtering film, or a chromium oxide deposition A transparent resin coating treatment on the surface of the film, the chromium oxide sputtering film, the black high thermal conductive resin or the black high thermal conductive resin is preferable.
Further, if the light incident side of the outer portion of the frame is black, the temperature of the frame increases due to light absorption. Therefore, it is necessary to form a white-based reflective film such as aluminum or nickel on the light incident side of the outer portion of the frame.
Moreover, it is preferable that an uneven | corrugated shaped part or a fin-shaped part or an uneven | corrugated shaped part and a fin-shaped part are formed in the resin frame body core surface. As a result, the adhesion between the resin frame core and the metal film is improved, and the area of heat radiation to the air can be increased by increasing the exposed surface area of the frame.
A metal frame made of an anodized blackened aluminum material or the like may be used. Even in the case of this metal frame, it is preferable to increase the heat radiation area to the air and enhance the cooling effect by forming the uneven portion, the fin portion, or the uneven portion and the fin portion on the surface.
（Ａ−２）イオン注入層分離法
本実施例においては、イオン注入層を使用したイオン注入層分離法による透過型ＬＣＤの製造方法について説明する。
(A-2) Ion Implantation Layer Separation Method In this example, a method for manufacturing a transmissive LCD by an ion implantation layer separation method using an ion implantation layer will be described.
（１）種子基板１０としての単結晶Ｓｉ基板の表面から所定深さに高濃度水素イオン注入層４１を形成する。例えば、１００ＫｅＶ，５×１０１６〜１×１０１７／ｃｍ２のドーズ量で約１μｍ深さに水素イオンを注入する。
この時に、予め種子基板をＧｅ濃度２０〜３０％のＳｉＧｅ基板としておけば、後述する分離後のＳｉエピタキシャル成長で歪みＳｉ層が直に形成できる。
(1) The high concentration hydrogen ion implanted layer 41 is formed at a predetermined depth from the surface of the single crystal Si substrate as the
At this time, if the seed substrate is a SiGe substrate having a Ge concentration of 20 to 30% in advance, a strained Si layer can be directly formed by Si epitaxial growth after separation described later.
（２）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(2) The transparent insulating
（３）種子基板と石英ガラス基板の透明絶縁層を貼り合せる（図１０参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（４）に準ずる。 (3) The transparent insulating layer of the seed substrate and the quartz glass substrate is bonded (see FIG. 10). In addition, conditions etc. apply to (4) of said (A-1) porous semiconductor layer separation method.
（４）剥離用アニール及び種子基板分離を行う（図１１参照）。
剥離用アニールは、５００℃、１０〜２０分間の熱処理、または急加熱急冷却のＲＴＡ（Rapid Thermal Anneal；ラピッドサーマルアニール、例えばハロゲンランプアニールの８００℃数秒、Ｘｅフラッシュランプアニール１０００℃数ミリ秒など）などの熱処理により行う。これにより、イオン注入した水素が膨張し、微小気泡内の圧力作用及び結晶再配列作用により水素イオン注入層４１に歪み層を発生させ、両基板裏面をＵＶテープ９等で貼り合せし、引張り剥離する。
この時に、回転する高濃度水素イオン注入層にレーザー照射またはレーザーウオータージェット照射させてイオン注入した水素を膨張し、微小気泡内の圧力作用及び結晶再配列作用により水素イオン注入層４１に歪み層を発生させ、両基板裏面をＵＶテープ９等で貼り合せし、引張り剥離してもよい。
(4) Annealing for peeling and seed substrate separation are performed (see FIG. 11).
Stripping annealing is performed at 500 ° C. for 10 to 20 minutes, or rapid heating and rapid cooling RTA (Rapid Thermal Anneal; rapid thermal annealing, for example, halogen lamp annealing at 800 ° C. for several seconds, Xe flash lamp annealing at 1000 ° C. for several milliseconds, etc. ). As a result, hydrogen implanted by ion implantation expands, a strained layer is generated in the hydrogen ion implanted layer 41 by the pressure action and crystal rearrangement action in the microbubbles, and the back surfaces of both substrates are bonded together by
At this time, the hydrogen ion implantation is expanded by irradiating the rotating high-concentration hydrogen ion-implanted layer with laser irradiation or laser water jet irradiation, and a strained layer is formed in the hydrogen ion-implanted layer 41 by the pressure action and crystal rearrangement action in the microbubbles. Alternatively, the back surfaces of both substrates may be bonded with
これ以降の工程については、（Ａ−１）に準ずる。 About the process after this, it applies to (A-1).
なお、本実施例においても、例えば、Ｇｅ濃度２０〜３０％のＳｉＧｅ層である歪み印加の単結晶半導体層としての単結晶Ｓｉ層１２を形成し、その上にＣＶＤのＳｉエピタキシャル成長により歪みＳｉ層を形成すると、従来の無歪みチャネル層の単結晶Ｓｉ層に比べ約１．７６倍の大幅な電子移動度の向上を達成したＭＯＳＴＦＴの表示素子部及び周辺回路部が実現するので、高性能、高精細、高品質の透過型ＬＣＤが実現する。
つまり、本実施例の場合には、ＳｉＧｅ基板である種子基板と、光学研磨ダメージをエッチングして透明絶縁層を形成した石英ガラスの支持基板を貼り合せ、水素イオン注入層の歪部から種子基板を分離し、表示領域のＳｉＧｅ層をエッチングして透明絶縁層を露出させ、水素アニールのエッチングとＳｉエピタキシャル成長により表示領域にポリＳｉ層を形成し、周辺回路領域にＳｉＧｅ層をシードに歪Ｓｉ層を形成することにより、高性能、高精細、高品質の透過型ＬＣＤが実現する。
Also in this embodiment, for example, a single
That is, in the case of the present embodiment, a seed substrate which is a SiGe substrate and a support substrate made of quartz glass formed by etching optical polishing damage to form a transparent insulating layer are bonded together, and the seed substrate is formed from the strained portion of the hydrogen ion implanted layer. The transparent insulating layer is exposed by etching the SiGe layer in the display region, a poly-Si layer is formed in the display region by hydrogen annealing etching and Si epitaxial growth, and the strained Si layer is seeded with the SiGe layer in the peripheral circuit region As a result, a high-performance, high-definition, high-quality transmissive LCD is realized.
（Ａ−３）裏面加工法
本実施例においては、裏面加工法による透過型ＬＣＤの製造方法について説明する。
(A-3) Back Surface Processing Method In this embodiment, a transmissive LCD manufacturing method by the back surface processing method will be described.
（１）支持基板としての研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(1) The transparent insulating
（２）種子基板１０と石英ガラス基板の透明絶縁層を貼り合せる（図１２参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（４）に準ずる。
この時に、予め種子基板をＧｅ濃度２０〜３０％のＳｉＧｅ基板としておけば、Ｓｉエピタキシャル成長で歪みＳｉ層が直に形成できる。
(2) The transparent insulating layer of the
At this time, if the seed substrate is a SiGe substrate having a Ge concentration of 20 to 30% in advance, a strained Si layer can be directly formed by Si epitaxial growth.
（３）種子基板の裏面加工を行う。
石英ガラス基板３０上を少なくとも糊残りのない帯電防止の紫外線照射硬化型テープ（以下「ＵＶテープ」と称す）などで覆い、ＵＶテープ側を研削装置または／及び研磨装置のステージに真空吸着で保持した状態で、単結晶Ｓｉの種子基板１０の裏面側から砥石、ダイヤモンドホイールなどの研削を行う。例えば、１軸は＃３２０または＃４００、２軸は＃１５００または＃２０００のダイヤモンドホイールで研削を行う。
その後、必要に応じて酸化セリウム等でのバフ研磨またはＣＭＰ（Chemical Mechanical Polishing）、さらに化学的エッチングあるいは化学的エッチングのみで、単結晶Ｓｉの種子基板を所定膜厚例えば１〜３μｍに仕上げる。
単結晶Ｓｉの種子基板１０は、所定膜厚の研削後、または、研削および研磨後に、ＨＦ＋Ｈ２Ｏ２＋Ｈ２Ｏ混合液やＨＦ＋ＨＮＯ３＋ＣＨ３ＣＯＯＨ混合液などの化学的エッチング液によりライトエッチングすることで研削または研磨歪を除去する必要がある。
必要に応じて化学的エッチング液（ＨＦ＋ＨＮＯ３＋ＣＨ３ＣＯＯＨ混合液などの酸性系エッチング液、水酸化ナトリウム液などのアルカリ系エッチング液など）に対する耐薬品性向上のために、ＵＶテープをワックス例えば水溶性接着剤で覆ってもよい。
水溶性接着剤としては、ホットメルト系水溶性固形ワックス（例えば、日化精工社製のアクアワックス２０／５０／８０（商品名）（主成分は脂肪酸グリセリド）、アクアワックス５５３／５３１／４４２／ＳＥ（商品名）（主成分はポリエチレングリコール、ビニルピロリドン共重合物、グリセリンポリエーテル）、ＰＥＧワックス２０（商品名）（主成分はポリエチレングリコール）など）、または水溶性液状ワックス（例えば、日化精工社製の合成樹脂系液状接着剤のアクアリキッドＷＡ−３０２（商品名）（主成分はポリエチレングリコール、ビニルピロリドン誘導体、メタノール）、ＷＡ−２０５１１／ＱＡ−２０５６６（商品名）（主成分はポリエチレングリコール、ビニルピロリドン誘導体、ＩＰＡ、水）など）を使用することができる。そして、化学的エッチング後に、５０〜６０℃の温水洗浄でワックスを除去し、ＵＶ照射硬化してＵＶテープを剥離することで、表面保護することができる。
あるいは、ＨＦ＋Ｈ２Ｏ２＋Ｈ２Ｏ混合液やＨＦ＋ＨＮＯ３＋ＣＨ３ＣＯＯＨ混合液などの化学的エッチング液のみで単結晶Ｓｉの種子基板１０を所定膜厚化してもよい。
この時に、ＵＶテープ表面から高速ガス流（例えば高速空気流）を噴出しながら回転する公知のベルヌイチャックにより保持すると、化学的エッチング液にＵＶテープ表面が晒されないので、耐酸性のＵＶテープでなくてもよい。
更に、この条件最適化により、ＵＶテープなしで直に石英ガラス基板側をベルヌイチャックで保持して単結晶Ｓｉの種子基板１０を化学的エッチング液によりエッチングしてもよい。
また、ＵＶテープは、ポリオレフィンなどのＵＶテープ基材および強い接着力で糊残りのない帯電防止のアクリル系などのＵＶ照射硬化型接着剤からなるものである。ＵＶ照射硬化型接着剤は接着力が強いため、このＵＶテープにより石英ガラス基板を強固に保持および表面保護した状態で、裏面研削、研磨および化学的エッチングを行うことができる。
この帯電防止機能により製造工程中の静電破壊を防止することができるため、静電気ダメージによる半導体特性不良を防止することができる。なお、ＵＶ照射硬化型接着剤の硬化前および硬化後の表面抵抗は、１０６〜１０１２Ω／□程度の静電気ダメージを防止するレベルであることが望ましい。
なお、化学的エッチングを行う場合、ＵＶテープはフッ酸に対する耐酸性を有することが必要である。これにより、化学的エッチング時の石英ガラス基板などのダメージを防止する。また、ＵＶ照射硬化型接着剤は、紫外線の照射によって粘着力が弱まるため、研削等の後はＵＶテープを糊残りなく剥離することができる。
(3) The back surface processing of the seed substrate is performed.
The
Thereafter, if necessary, the single crystal Si seed substrate is finished to a predetermined film thickness of, for example, 1 to 3 μm by buffing with cerium oxide or the like, CMP (Chemical Mechanical Polishing), and further only chemical etching or chemical etching.
The single crystal
In order to improve chemical resistance against chemical etching liquids (acidic etching liquids such as HF + HNO 3 + CH 3 COOH mixed liquid, alkaline etching liquids such as sodium hydroxide liquid) as necessary, UV tapes are made of wax, for example, water-soluble May be covered with an adhesive.
Examples of the water-soluble adhesive include hot-melt water-soluble solid wax (for example,
Alternatively, the single-crystal
At this time, if it is held by a known Bernoulli chuck that rotates while jetting a high-speed gas flow (for example, a high-speed air flow) from the surface of the UV tape, the UV tape surface is not exposed to the chemical etching solution. May be.
Further, by optimizing this condition, the single crystal
The UV tape is made of a UV tape base material such as polyolefin and a UV irradiation curable adhesive such as an antistatic acrylic type having a strong adhesive force and no adhesive residue. Since the UV irradiation curable adhesive has a strong adhesive force, backside grinding, polishing and chemical etching can be performed in a state where the quartz glass substrate is firmly held and the surface is protected by the UV tape.
Since this antistatic function can prevent electrostatic breakdown during the manufacturing process, it is possible to prevent semiconductor characteristic defects due to electrostatic damage. The surface resistance of the UV irradiation curable adhesive before and after curing is preferably at a level that prevents electrostatic damage of about 10 6 to 10 12 Ω / □.
When chemical etching is performed, the UV tape needs to have acid resistance against hydrofluoric acid. This prevents damage to the quartz glass substrate and the like during chemical etching. In addition, since the adhesive strength of the UV irradiation curable adhesive is weakened by irradiation with ultraviolet rays, the UV tape can be peeled off without any adhesive residue after grinding or the like.
これ以降の工程については、（Ａ−１）に準ずる。 About the process after this, it applies to (A-1).
（Ａ−４）Ｓｉエッチング法
本実施例においては、Ｓｉエッチング法による透過型ＬＣＤの製造方法について説明する。
(A-4) Si Etching Method In this example, a method for manufacturing a transmissive LCD by the Si etching method will be described.
（１）種子基板１０としてのＰ−型単結晶Ｓｉ基板表面に、Ｓｉエピタキシャル成長によりボロンを高濃度にドープしたエッチング停止層として３〜１０μｍのＰ＋＋型単結晶Ｓｉ層４２を形成し、このＰ＋＋型単結晶Ｓｉ層の上に、Ｓｉエピタキシャル成長により１〜２μｍの単結晶Ｓｉ層１２を形成する。
(1) On the surface of the P − type single crystal Si substrate as the
（２）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(2) The transparent insulating
（３）種子基板と石英ガラス基板の透明絶縁層を貼り合せる（図１３参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（４）に準ずる。 (3) The transparent insulating layer of the seed substrate and the quartz glass substrate is bonded (see FIG. 13). In addition, conditions etc. apply to (4) of said (A-1) porous semiconductor layer separation method.
（４）貼り合せ面の縁に接着剤を塗布した後に、種子基板１０をエチレンジアミン・ピロカテコールなどでエッチングし、フッ酸、硝酸系エッチング液などによりエッチング停止層をエッチングする。
(4) After applying an adhesive to the edge of the bonding surface, the
これ以降の工程については、（Ａ−１）に準ずる。 About the process after this, it applies to (A-1).
（Ｂ）表示領域及び周辺回路領域に遮光性金属層が形成された支持基板と種子基板でＳＯＩ基板を形成する場合
（Ｂ−１）多孔質半導体層分離法
本実施例においては、多孔質Ｓｉ層を使用した多孔質半導体層分離法による透過型ＬＣＤの製造方法について説明する。
(B) In the case where an SOI substrate is formed of a support substrate having a light-shielding metal layer formed in a display region and a peripheral circuit region and a seed substrate (B-1) Porous semiconductor layer separation method In this example, porous Si layer A method for manufacturing a transmissive LCD by a porous semiconductor layer separation method using layers will be described.
（１）種子基板１０としての単結晶Ｓｉ層に陽極化成法で多孔質Ｓｉ層を形成する（図１４参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（１）に準ずる。
(1) A porous Si layer is formed on the single crystal Si layer as the
（２）多孔質Ｓｉ層上にＣＶＤのＳｉエピタキシャル成長の単結晶Ｓｉ層或いは歪印加のＳｉＧｅ層１２を形成する（図１４参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（２）に準ずる。
(2) A single-crystal Si layer of Si epitaxial growth by CVD or a
（３）支持基板としての研磨ダメージをエッチングした石英ガラス基板３０にＣＶＤ法で透明絶縁層１３ａ，１３ｂ及び遮光性金属層４３を形成する（図１４参照）。なお、遮光性金属層はアース電位にしておくことで、強い入射光による各部のチャージアップを防止できる。
(3) The transparent insulating
[１]まず、石英ガラス基板表面には酸化セリウム等の研磨剤による光学研磨のナノメーターレベルのクラックが無数に存在してナノメーターレベルの凹凸が大きいために、この石英ガラス基板表面の光学研磨ダメージをエッチングして形成されたナノメーターレベルのエッチング溝をカバーして平坦性を高めるために、ＣＶＤ法等により透明絶縁層１３ａ（ＳｉＯ２またはＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２積層膜など）を３００ｎｍ〜５００ｎｍ形成する。
[1] First, since the surface of the quartz glass substrate has numerous nanometer-level cracks due to the optical polishing with an abrasive such as cerium oxide and the irregularities at the nanometer level are large, the surface of the quartz glass substrate is optically polished. A transparent insulating
[２]次に、ＣＶＤ、スパッタリング、蒸着等で全面に１００〜３００ｎｍの遮光性金属層４３（例えば、ＷＳｉ２（タングステンシリサイド）、ＴｉＳｉ２（チタンシリサイド）ＭｏＳｉ２（モリブデンシリサイド）などの遷移金属シリサイドなど）を形成し、画素開口部の遮光性金属層をエッチングする。この時に、遮光性金属層は後工程でのＳｉエピタキシャル成長作業温度に耐えて、積層する透明絶縁層及び単結晶Ｓｉ層或いは石英ガラス基板との熱ストレス応力が少ない材料で、しかも低反射であることが好ましい。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
[2] Next, a transition metal such as a light-shielding metal layer 43 (for example, WSi 2 (tungsten silicide), TiSi 2 (titanium silicide), MoSi 2 (molybdenum silicide)) of 100 to 300 nm on the entire surface by CVD, sputtering, vapor deposition, or the like. Silicide, etc.) is formed, and the light-shielding metal layer in the pixel opening is etched. At this time, the light-shielding metal layer can withstand the temperature of Si epitaxial growth in the subsequent process, is made of a material with low thermal stress stress with the transparent insulating layer and the single crystal Si layer or the quartz glass substrate to be laminated, and has low reflection. Is preferred.
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
[３]その後、ＣＶＤ、スパッタリング、蒸着等で全面に３００ｎｍ〜５００ｎｍ透明絶縁層１３ｂ（ＳｉＯ２またはＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２積層膜など）を形成する。
尚、透明絶縁層１３ａ、１３ｂのＳｉ３Ｎ４等の窒化系シリコン膜は３０〜１００ｎｍ程度が望ましい。
[3] Thereafter, a 300 nm to 500 nm transparent insulating
The nitride silicon film such as Si 3 N 4 of the transparent insulating
（４）種子基板の単結晶Ｓｉ層と石英ガラス基板の透明絶縁層１３ｂを貼り合せる（図１５参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（４）に準ずる。
(4) The single crystal Si layer of the seed substrate and the transparent insulating
（５）種子基板１０及び石英ガラス基板３０をＵＶテープ９などで保持し、高多孔質Ｓｉ層１１ｂから種子基板１０を分離する（図１６参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（５）に準ずる。
(5) The
（６）剥離残りの高多孔質Ｓｉ層１１ｂ及び低多孔質Ｓｉ層１１ｃをウエットエッチングした後に、表示領域の単結晶Ｓｉ層或いはＳｉＧｅ層をエッチングして透明絶縁層１３ｂを露出させる（図１７参照）。
(6) After wet etching the remaining high
（７）ＣＶＤ前の水素アニールにより単結晶Ｓｉ層或いはＳｉＧｅ層表面をエッチングして平坦化し、ＣＶＤのＳｉエピタキシャル成長により周辺回路領域の単結晶Ｓｉ層或いはＳｉＧｅ層をシードに高結晶性単結晶Ｓｉ層或いは歪Ｓｉ層１５を形成し、表示領域の透明絶縁層上にポリＳｉ層１６を形成する。
(7) The surface of the single-crystal Si layer or SiGe layer is etched and flattened by hydrogen annealing before CVD, and the single-crystal Si layer or SiGe layer in the peripheral circuit region is seeded by high-crystalline single-crystal Si layer by CVD Si epitaxial growth Alternatively, the
（８）高結晶性単結晶Ｓｉ層或いは歪Ｓｉ層１５内にＬＣＤ周辺回路部、ポリＳｉ層に表示部のＴＦＴ等を作製し、表示領域のＴＦＴ部以外のポリＳｉ層を除去する（図１８参照、なお、図１８（ａ）は表示領域の表示素子部と画素開口部を示し、図１８（ｂ）は周辺回路領域を示している）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（８）に準ずる。
(8) An LCD peripheral circuit portion is formed in the highly crystalline single crystal Si layer or the
なお、上記の実施例では、石英ガラス基板３０の表示領域の単結晶Ｓｉ層或いはＳｉＧｅ層１２をエッチングして透明絶縁層１３ｂを露出させ、ＣＶＤのＳｉエピタキシャル成長により周辺回路領域の単結晶Ｓｉ層或いはＳｉＧｅ層１２をシードに高結晶性単結晶Ｓｉ層或いは歪Ｓｉ層１５を形成し、表示領域の透明絶縁層上にポリＳｉ層１６を形成して、周辺回路領域に単結晶ＳｉＴＦＴ或いは歪ＳｉＴＦＴからなるシステムＬＳＩを含むＬＣＤ周辺回路部、表示領域にポリＳｉＴＦＴからなる表示部を作製し、表示領域のＴＦＴ部以外のポリＳｉ層１６を除去して画素開口部を形成して透明材料で埋め込み平坦化させた透過型ＬＣＤを作製している。
In the above embodiment, the single crystal Si layer or the
これに対して図１９のように、石英ガラス基板３０の表示領域の単結晶Ｓｉ層或いはＳｉＧｅ層１２をエッチングすることなく、ＣＶＤのＳｉエピタキシャル成長により単結晶Ｓｉ層或いはＳｉＧｅ層１２をシードに全面に高結晶性単結晶Ｓｉ層或いは歪Ｓｉ層１５を形成し、周辺回路領域に単結晶ＳｉＴＦＴ或いは歪ＳｉＴＦＴからなるシステムＬＳＩを含むＬＣＤ周辺回路部、表示領域に単結晶ＳｉＴＦＴ或いは歪ＳｉＴＦＴからなる表示部を作製し、表示領域のＴＦＴ部以外の単結晶Ｓｉ層或いはＳｉＧｅ層１２及び高結晶性単結晶Ｓｉ層或いは歪Ｓｉ層１５を除去して画素開口部を形成して透明材料で埋め込み平坦化させた、オール単結晶ＳｉＴＦＴ或いは歪ＳｉＴＦＴからなる透過型ＬＣＤを作製しても良い。
On the other hand, as shown in FIG. 19, without etching the single crystal Si layer or
これ以降の工程については、（Ａ−１）に準ずる。 About the process after this, it applies to (A-1).
（Ｂ−２）イオン注入層分離法
本実施例においては、イオン注入層を使用したイオン注入層分離法による透過型ＬＣＤの製造方法について説明する。
(B-2) Ion Implantation Layer Separation Method In this example, a method for manufacturing a transmissive LCD by an ion implantation layer separation method using an ion implantation layer will be described.
（１）種子基板１０としての単結晶Ｓｉ基板の表面から所定深さに高濃度水素イオン注入層４１を形成する。なお、条件等は上記（Ａ−２）イオン注入層分離法の（１）に準ずる。
(1) The high concentration hydrogen ion implanted layer 41 is formed at a predetermined depth from the surface of the single crystal Si substrate as the
（２）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０にＣＶＤ及びリソグラフィとエッチングにより透明絶縁層１３ａ，１３ｂ及び画素開口部を形成した遮光性金属層４３を形成する。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（３）に準ずる。
(2) The light-shielding
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
In addition, conditions etc. apply to (3) of said (B-1) porous semiconductor layer separation method.
（３）種子基板と石英ガラス基板の透明絶縁層１３ｂを貼り合せる（図２０参照）。なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（４）に準ずる。
(3) The seed substrate and the transparent insulating
（４）剥離用アニールまたはレーザー剥離またはレーザーウオータージェット剥離などにより種子基板分離を行う（図２１参照）。なお、条件等は上記（Ａ−２）イオン注入層分離法の（４）に準ずる。 (4) Seed substrate separation is performed by annealing for peeling, laser peeling or laser water jet peeling (see FIG. 21). The conditions and the like are in accordance with (4) of the above (A-2) ion implantation layer separation method.
これ以降の工程については、（Ｂ−１）に準ずる。 About the process after this, it applies to (B-1).
（Ｂ−３）裏面加工法
本実施例においては、裏面加工法による透過型ＬＣＤの製造方法について説明する。
(B-3) Back surface processing method In a present Example, the manufacturing method of transmissive LCD by a back surface processing method is demonstrated.
（１）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０にＣＶＤ及びリソグラフィとエッチングにより透明絶縁層１３ａ，１３ｂ及び画素開口部を形成した遮光性金属層４３を形成する。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（３）に準ずる。
(1) A light-shielding
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
In addition, conditions etc. apply to (3) of said (B-1) porous semiconductor layer separation method.
（２）種子基板と石英ガラス基板の透明絶縁層１３ｂを貼り合せる（図２２参照）。なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（４）に準ずる。
(2) The transparent
（３）種子基板の裏面加工を行う。なお、条件等は上記（Ａ−３）裏面加工法の（２）に準ずる。 (3) The back surface processing of the seed substrate is performed. In addition, conditions etc. apply to (2) of said (A-3) back surface processing method.
これ以降の工程については、（Ｂ−１）に準ずる。 About the process after this, it applies to (B-1).
（Ｂ−４）Ｓｉエッチング法
本実施例においては、Ｓｉエッチング法による透過型ＬＣＤの製造方法について説明する。
(B-4) Si Etching Method In this example, a method for manufacturing a transmissive LCD by the Si etching method will be described.
（１）種子基板１０としてのＰ−型単結晶Ｓｉ基板表面にエッチング停止層のＰ＋＋型単結晶Ｓｉ層４２及び単結晶Ｓｉ層１２を形成する。なお、条件等は上記（Ａ−４）Ｓｉエッチング法の（１）に準ずる。
(1) The P ++ type single crystal Si layer 42 and the single
（２）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０にＣＶＤ及びリソグラフィとエッチングにより透明絶縁層１３ａ，１３ｂ及び画素開口部を形成した遮光性金属層４３を形成する。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（３）に準ずる。
(2) The light-shielding
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
In addition, conditions etc. apply to (3) of said (B-1) porous semiconductor layer separation method.
（３）種子基板と石英ガラス基板の透明絶縁層１３ｂを貼り合せる（図２３参照）。なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（４）に準ずる。
(3) The seed substrate and the transparent insulating
（４）種子基板及びエッチング停止層をエッチングする。なお、条件等は上記（Ａ−４）Ｓｉエッチング法の（４）に準ずる。 (4) The seed substrate and the etching stop layer are etched. The conditions and the like conform to (4) of the above (A-4) Si etching method.
これ以降の工程については、（Ｂ−１）に準ずる。 About the process after this, it applies to (B-1).
（Ｃ）表示領域及び周辺回路領域に遮光性金属層が形成された種子基板と支持基板でＳＯＩ基板を形成する場合
（Ｃ−１）多孔質半導体層分離法
本実施例においては、多孔質Ｓｉ層を使用した多孔質半導体層分離法による透過型ＬＣＤの製造方法について説明する。
(C) In the case where an SOI substrate is formed of a seed substrate having a light-shielding metal layer formed in a display region and a peripheral circuit region and a supporting substrate. (C-1) Porous semiconductor layer separation method In this example, porous Si A method of manufacturing a transmissive LCD by a porous semiconductor layer separation method using layers will be described.
（１）種子基板１０としての単結晶Ｓｉ基板に陽極化成法で多孔質Ｓｉ層を形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（１）に準ずる。
(1) A porous Si layer is formed on a single crystal Si substrate as the
（２）多孔質Ｓｉ層上にＣＶＤのＳｉエピタキシャル成長の単結晶Ｓｉ層或いは歪印加のＳｉＧｅ層１２を形成する（図２４参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（２）に準ずる。
(2) A single-crystal Si layer of Si epitaxial growth by CVD or a
（３）単結晶Ｓｉ層或いは歪印加のＳｉＧｅ層１２上に、ＣＶＤ、スパッタリング、蒸着法等により透明絶縁層１３ａ、１３ｂ及び画素開口部を形成した遮光性金属層４３を形成する。（図２４参照）
(3) On the single crystal Si layer or the strain-applied
[１]まず、単結晶Ｓｉ層１２上に、ＣＶＤ法等により透明絶縁層１３ａ（ＳｉＯ２またはＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２積層膜など）を３００ｎｍ〜５００ｎｍ形成する。
[1] First, a transparent insulating
[２]次に、ＣＶＤ、スパッタリング、蒸着等で全面に１００〜３００ｎｍの遮光性金属層４３（例えば、ＷＳｉ２（タングステンシリサイド）、ＴｉＳｉ２（チタンシリサイド）ＭｏＳｉ２（モリブデンシリサイド）などの遷移金属シリサイドなど）を形成し、画素開口部の遮光性金属層をエッチングする。この時に、遮光性金属層は後工程でのＳｉエピタキシャル成長作業温度に耐えて、積層する透明絶縁層及び単結晶Ｓｉ層或いは石英ガラス基板との熱ストレス応力が少ない材料で、しかも低反射であることが好ましい。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
[2] Next, a transition metal such as a light-shielding metal layer 43 (for example, WSi 2 (tungsten silicide), TiSi 2 (titanium silicide), MoSi 2 (molybdenum silicide)) of 100 to 300 nm on the entire surface by CVD, sputtering, vapor deposition, or the like. Silicide, etc.) is formed, and the light-shielding metal layer in the pixel opening is etched. At this time, the light-shielding metal layer can withstand the temperature of Si epitaxial growth in the subsequent process, is made of a material with low thermal stress stress with the transparent insulating layer and the single crystal Si layer or the quartz glass substrate to be laminated, and has low reflection. Is preferred.
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
[３]その後、ＣＶＤ、スパッタリング、蒸着等で全面に３００ｎｍ〜５００ｎｍ透明絶縁層１３ｂ（ＳｉＯ２またはＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２積層膜など）を形成する。
尚、透明絶縁層１３ａ、１３ｂのＳｉ３Ｎ４等の窒化系シリコン膜は３０〜１００ｎｍ程度が望ましい。
[3] Thereafter, a 300 nm to 500 nm transparent insulating
The nitride silicon film such as Si 3 N 4 of the transparent insulating
（４）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する（図２４参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(4) The transparent insulating
（５）種子基板の透明絶縁層１３ｂと石英ガラス基板の透明絶縁層１３と貼り合せる（図２５参照）。
(5) The seed substrate transparent insulating
（６）種子基板１０及び石英ガラス基板３０をＵＶテープ９などで保持し、高多孔質Ｓｉ層１１ｂから種子基板１０を分離する（図２６参照）。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（５）に準ずる。
(6) The
これ以降の工程については、（Ｂ−１）に準ずる。 About the process after this, it applies to (B-1).
（Ｃ−２）裏面加工法
本実施例においては、裏面加工法による透過型ＬＣＤの製造方法について説明する。
(C-2) Back Side Processing Method In this example, a method for manufacturing a transmissive LCD by the back side processing method will be described.
（１）種子基板１０としての単結晶Ｓｉまたは歪み印加のＳｉＧｅ基板にＣＶＤ、スパッタリング、蒸着法等で透明絶縁層１３ａ，１３ｂ及び画素開口部を形成した遮光性金属層４３を形成する。なお、条件等は上記（Ｂ−１）多孔質半導体層分離法の（３）に準ずる。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
(1) The light-shielding
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
（２）支持基板としての光学研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(2) The transparent insulating
（３）種子基板１０の透明絶縁層１３ｂと石英ガラス基板の透明絶縁層１３と貼り合せる（図２７参照）。
(3) The transparent
（３）種子基板１０の裏面加工を行い、単結晶Ｓｉ層または歪み印加のＳｉＧｅ層１２を形成する。なお、条件等は上記（Ａ−３）裏面加工法の（２）に準ずる。
(3) The back surface of the
これ以降の工程については、（Ｃ−１）に準ずる。 About the process after this, it applies to (C-1).
（Ｃ−３）Ｓｉエッチング法
本実施例においては、Ｓｉエッチング法による透過型ＬＣＤの製造方法について説明する。
(C-3) Si Etching Method In this example, a method for manufacturing a transmissive LCD by the Si etching method will be described.
（１）種子基板１０としてのＰ−型単結晶Ｓｉ基板表面にエッチング停止層のＰ＋＋型単結晶Ｓｉ層４２及び単結晶Ｓｉ層１２を形成する。なお、条件等は上記（Ａ−４）Ｓｉエッチング法の（１）に準ずる。
(1) The P ++ type single crystal Si layer 42 and the single
（２）単結晶Ｓｉ層にＣＶＤ、スパッタリング、蒸着法等で透明絶縁層１３ａ，１３ｂ及び画素開口部形成した遮光性金属層４３を形成する。なお、条件等は上記（Ｃ−１）多孔質半導体層分離法の（３）に準ずる。
尚、この遮光性金属層４３の画素開口部をエッチングする時に、同時に遮光性金属層４３を表示領域と周辺回路領域に分割してそれぞれ別の電界印加によるノーマルブラック液晶化をしてもよい。
更に、同時に遮光性金属層４３の画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層を形成してもよい。
(2) The transparent insulating
When the pixel opening of the light shielding
Further, at the same time, the light shielding metal layer of the display element portion may be formed by etching the periphery of the display element portion in the periphery of the pixel opening portion of the light shielding
（３）支持基板としての研磨ダメージをエッチングした石英ガラス基板３０に透明絶縁層１３を３００ｎｍ〜４００ｎｍ形成する。なお、条件等は上記（Ａ−１）多孔質半導体層分離法の（３）に準ずる。
(3) The transparent insulating
（４）種子基板の透明絶縁層１３ｂと石英ガラス基板の透明絶縁層１３と貼り合せる（図２８参照）。
(4) The seed substrate transparent insulating
種子基板及びエッチング停止層をエッチングして、単結晶Ｓｉ層または歪み印加のＳｉＧｅ層１２を露出させる。（図２９参照）。なお、条件等は上記（Ａ−４）Ｓｉエッチング法の（４）に準ずる。
The seed substrate and the etch stop layer are etched to expose the single crystal Si layer or the
これ以降の工程については、（Ｃ−１）に準ずる。 About the process after this, it applies to (C-1).
なお、本製造方法によって、図３０（図３０（ａ）は対向基板側から光が入射する透過型ＬＣＤ，図３０（ｂ）は石英ガラス基板側から光が入射する透過型ＬＣＤ）で示す様な透過型ＬＣＤを得ることができる。 As shown in FIG. 30 (FIG. 30A is a transmissive LCD in which light is incident from the counter substrate side, and FIG. 30B is a transmissive LCD in which light is incident from the quartz glass substrate side). A transparent LCD can be obtained.
図３０（ａ）はＴＦＴ部に対応する対向基板側と石英ガラス基板側に遮光性金属層形成した実施例で、対向基板側には光反射させる白色系遮光性金属層（アルミニウム、ニッケル、銀など）を形成し、石英ガラス基板側にはＷＳｉ２（タングステンシリサイド）、ＴｉＳｉ２（チタンシリサイド）ＭｏＳｉ２（モリブデンシリサイド）などの遷移金属シリサイド層による低反射の遮光性金属層が形成されている。
この場合、対向基板よりも石英ガラス基板を若干大きく設計することで、石英ガラス基板上の単結晶Ｓｉ層及び遮光性金属層面に高熱伝導性モールド樹脂２８を直接接触させるので冷却効果が高い。更に、石英ガラス基板上の画素開口部以外の表示部及び周辺回路部が遮光性金属層により光遮蔽されているので、戻り反射板が不要となりコストダウンできる。
また、対向基板側からの入射光がメッキ樹脂枠の反射膜２９で反射されるので温度上昇が低減し、対向基板側の反射防止膜付き防塵ガラス２７が高熱伝導性モールド樹脂２８とメッキ樹脂枠７４により十分に接触しているので放熱効果が高い。
FIG. 30A shows an embodiment in which a light-shielding metal layer is formed on the counter substrate side and the quartz glass substrate side corresponding to the TFT portion, and a white light-shielding metal layer (aluminum, nickel, silver) that reflects light on the counter substrate side. And a light-shielding metal layer of low reflection by a transition metal silicide layer such as WSi 2 (tungsten silicide), TiSi 2 (titanium silicide) and MoSi 2 (molybdenum silicide) is formed on the quartz glass substrate side. .
In this case, since the quartz glass substrate is designed to be slightly larger than the counter substrate, the high thermal
Further, since the incident light from the counter substrate side is reflected by the
図３０（ｂ）は、石英ガラス基板上の画素開口部以外の表示部及び周辺回路部が遮光性金属層により光遮蔽されているので、石英ガラス基板側から光入射させても表示部のＴＦＴ、周辺回路部のＴＦＴのリーク電流防止できる実施例であり、ＴＦＴ部に対応する石英ガラス基板側にはＷＳｉ２（タングステンシリサイド）、ＴｉＳｉ２（チタンシリサイド）ＭｏＳｉ２（モリブデンシリサイド）などの遷移金属シリサイド層による低反射の遮光性金属層が形成されているが、対向基板側には遮光性金属層は不要なのでコストダウンできる。
この場合にも、対向基板よりも石英ガラス基板を若干大きく設計することで、石英ガラス基板上の単結晶Ｓｉ層及び遮光性金属層面に高熱伝導性モールド樹脂２８を直接接触させるので冷却効果が高い。
また、石英ガラス基板側からの入射光がメッキ樹脂枠の反射膜２９で反射されるので温度上昇が低減し、対向基板側及び石英ガラス基板側の反射防止膜付き防塵ガラス２７が高熱伝導性モールド樹脂２８とメッキ樹脂枠７４に十分に接触しているので放熱効果が高い。
更に、金属製戻り反射防止板の代わりに黒色メッキ樹脂枠７４にすると、コストダウン出来る。
In FIG. 30B, since the display portion and the peripheral circuit portion other than the pixel opening on the quartz glass substrate are light-shielded by the light-shielding metal layer, the TFTs of the display portion even if light is incident from the quartz glass substrate side. This is an embodiment capable of preventing the leakage current of the TFT in the peripheral circuit portion, and a transition metal such as WSi 2 (tungsten silicide), TiSi 2 (titanium silicide) MoSi 2 (molybdenum silicide) on the quartz glass substrate side corresponding to the TFT portion. Although a low-reflective light-shielding metal layer is formed by the silicide layer, the cost can be reduced because the light-shielding metal layer is unnecessary on the counter substrate side.
Also in this case, the quartz glass substrate is designed to be slightly larger than the counter substrate, so that the high thermal
In addition, incident light from the quartz glass substrate side is reflected by the
Further, if the black plated
図３１（ａ）は遮光性金属層４３が形成された石英ガラス基板３０に高屈折率透明樹脂５０によりマイクロレンズアレイを形成し、入射側の集光レンズとして機能するマイクロレンズ付き石英ガラス基板３０を備える、いわゆるシングルマイクロレンズ構造の透過型ＬＣＤの実施例を示している。なお、マイクロレンズアレイは無機系高屈折率透明膜で形成しても良いことは言うまでもない。
FIG. 31A shows a
この実施の具体例として、例えば図３１（ａ）で示す様に、
[１]超薄型ＴＦＴ基板層からなる周辺回路部及び表示素子部を光遮蔽した遮光性金属層４３を有する石英ガラス基板３０上の複数の画素開口部に露出した石英ガラスを汎用リソグラフィ及びエッチング法によりエッチングしてマイクロレンズ部を形成する。この時に、マイクロレンズ部の曲率半径及び形状（球面または非球面など）と高屈折率透明樹脂５０の屈折率は、自由に光学設計することで所望の高輝度のＬＣＤを得ることが出来る。
[２]全面に高屈折率透明樹脂５０をコーティングしてマイクロレンズアレイ部を埋め込み、必要に応じて表面を研磨して表面平坦化する。更に、必要に応じてＳｉＯ２またはＳｉＯ２、ＳｉＮｘ及びＳｉＯ２積層膜を形成する。
[３]高屈折率透明樹脂５０または高屈折率透明樹脂５０及びＳｉＯ２またはＳｉＯ２、ＳｉＮｘ及びＳｉＯ２積層膜を窓開けして表示用ＴＦＴのドレインに接続する透明画素電極２１を画素開口部上に形成する。
[４]透明画素電極２１上にポリイミド等の配向膜２２を形成して配向処理したマイクロレンズアレイ形成の超薄型ＴＦＴ基板層からなる石英ガラス基板３０と、透明電極２３とポリイミド等の配向膜２４を形成して配向処理した対向基板４０と重ね合わせシールして空セル形成し、その後に液晶注入封止してシングルマイクロレンズ構造の透過型ＬＣＤを形成する。
As a specific example of this implementation, for example, as shown in FIG.
[1] General-purpose lithography and etching of quartz glass exposed at a plurality of pixel openings on a
[2] A high refractive index
[3] A
[4] A
この場合、超薄型ＴＦＴ基板層を有する石英ガラス基板３０側から光入射するが、画素開口部以外の表示部及び周辺回路部は既に遮光性金属層４３があるので、改めてマイクロレンズ周囲に遮光膜を形成する必要は無く、更に対向基板側の表示素子部対応領域にも遮光膜を形成する必要はないのでコストダウン出来る。
これにより、入射側の集光レンズとして機能するマイクロレンズ周囲に遮光膜形成したマイクロレンズ付き石英ガラス基板３０を備える、いわゆるシングルマイクロレンズ構造の高輝度、高コントラスト、高機能の透過型ＬＣＤを形成することが出来る。
In this case, light enters from the side of the
As a result, a high-luminance, high-contrast, high-function transmissive LCD having a so-called single microlens structure is provided, which includes a
図３１（ｂ）は遮光性金属層４３が形成された石英ガラス基板３０及び対向基板４０に高屈折率透明樹脂５０によりマイクロレンズアレイを形成し、入射側の集光レンズとして機能するマイクロレンズ付き対向基板４０と出射側のフィールドレンズとして機能するマイクロレンズ付き石英ガラス基板３０を備える、いわゆるデュアルマイクロレンズ（ダブルマイクロレンズとも言う）構造の透過型ＬＣＤの実施例を示している。なお、マイクロレンズアレイは無機系高屈折率透明膜で形成しても良いことは言うまでもない。
In FIG. 31B, a microlens array is formed with a high refractive index
この実施の具体例として、例えば図３１（ｂ）で示す様に、
[１]汎用リソグラフィ法及びエッチング法により、対向基板４０の石英ガラス、ネオセラム基板等に所定の凹形状のマイクロレンズ部を複数作成する。
[２]複数のマイクロレンズ部に高屈折率透明樹脂５０を充填し、石英ガラス、ネオセラム等の透明ガラス基板を透明接着剤で貼り合わせる。この時に透明ガラス基板を高屈折率透明樹脂５０で対向基板４０に貼り合せて、透明接着剤を使用しないでもよい。
[３]片面研磨又は両面研磨により、約２０μｍの透明ガラス基板（スタック基板）６６でカバーしたマイクロレンズアレイ付き対向基板４０を作成する。
この時に、スタンプ法で石英ガラス、ネオセラム等の対向基板４０に所定の凹凸形状のマイクロレンズを複数作成してもよい。これは、汎用リソグラフィ技術でフォトレジストのマイクロレンズパターンを複数形成し、加熱リフローで所望の凸形状のマイクロレンズを複数形成する。ついで、この凸形状の上に無電解メッキでニッケル等の金属膜を被着し、樹脂及び支持台で凸型を転写して凹形状のスタンパを作成する。そして、対向基板４０上に塗布された高屈折率透明樹脂５０へスタンパを転写して凸形状のマイクロレンズを複数形成し、マイクロレンズ間の凹部に低屈折率透明樹脂を充填して所定厚みの石英ガラス或いはネオセラム等の透明ガラス基板を貼り合せ、片面研磨又は両面研磨により、約２０μｍの透明ガラス基板（スタック基板）６６でカバーしたマイクロレンズアレイ形成の対向基板４０を作成してもよい。
[４]透明電極２３と配向膜２４を形成して配向処理したマイクロレンズアレイ付き対向基板４０と、上記のシングルマイクロレンズアレイ形成した超薄型ＴＦＴ基板層の少なくとも画素電極２１に配向膜２２を形成して配向処理した石英ガラス基板３０とを重ね合わせてシールして空セル形成し、その後に液晶注入封止したデュアルマイクロレンズ構造の透過型ＬＣＤを作成する。
As a specific example of this implementation, for example, as shown in FIG.
[1] A plurality of predetermined concave-shaped microlens portions are formed on the quartz glass, the neo-ceram substrate or the like of the
[2] A plurality of microlens portions are filled with a high refractive index
[3] The
At this time, a plurality of microlenses having a predetermined concavo-convex shape may be formed on the
[4] An
このときに、超薄型ＴＦＴ基板層を有する石英ガラス基板３０側から光入射する場合には、画素開口部以外の表示部及び周辺回路部は既に遮光性金属層４３があるので、改めてマイクロレンズ周囲に遮光膜を形成する必要は無く、更に対向基板４０側の表示素子部対応領域にも遮光膜を形成する必要はないのでコストダウン出来る。
但し、対向基板側から光入射する場合には、対向基板側のマイクロレンズ部周囲に反射膜４４を形成する必要がある。
At this time, when light is incident from the side of the
However, when light is incident from the counter substrate side, it is necessary to form the
例えば、エッチング法の場合は各マイクロレンズ周囲に相当する領域にアルミニウムなどのブラックマスク作用の反射膜４４を形成した透明ガラス基板の反射膜形成面側と、所定凹形状のマイクロレンズ内に高屈折率透明樹脂５０を充填させた対向基板４０とを透明接着剤で貼り合せて、片面研磨又は両面研磨により約２０μｍの透明ガラス基板（スタック基板）６６でカバーした各マイクロレンズ周囲をブラックマスク作用の反射膜４４で遮光したマイクロレンズアレイ形成の対向基板４０を作成してもよい。
尚、約２０μｍの透明ガラス基板（スタック基板）６６でカバーしたマイクロレンズアレイ対向基板４０を作成した後に、透明ガラス基板（スタック基板）６６表面の各マイクロレンズ周囲に相当する領域にアルミニウム等のブラックマスク作用の反射膜４４を形成してもよい。
つまり、各マイクロレンズ周囲に相当する透明ガラス基板（スタック基板）６６の表面または裏面のいずれか一方にブラックマスク作用の反射膜４４を形成してもよい。
さらに、スタンプ法の場合はそれぞれのマイクロレンズ周囲に相当する対向基板４０の表面にアルミニウム等のブラックマスク作用の反射膜４４を形成し、対向基板４０上に塗布された高屈折率透明樹脂５０にスタンパを転写して凸形状のマイクロレンズを複数形成し、各マイクロレンズ間の凹部に低屈折率透明樹脂を充填して所定厚みの石英ガラス或いはネオセラム等の透明ガラス基板を貼り合せ、片面研磨又は両面研磨により、約２０μｍの透明ガラス基板（スタック基板）６６でカバーしたマイクロレンズ周囲に反射膜４４を形成したマイクロレンズアレイ形成の対向基板４０を作成してもよい。
尚、片面研磨または両面研磨による透明ガラス（スタック基板）６６の膜厚精度が問題となる場合には、所定凹形状のマイクロレンズ内に高屈折率透明樹脂５０を充填させた後に、スピンコーティング等により所定膜厚の透明樹脂膜を形成し、必要に応じて無機系透明絶縁膜（ＳｉＯ２またはＳｉＯ２とＳｉＮｘとＳｉＯ２の積層膜など）を積層形成し、透明樹脂膜または透明無機系絶縁膜表面のマイクロレンズ周囲に相当する領域にブラックマスク作用のアルミニウム或いはクロムまたは酸化クロム等の低反射遮光膜４４を形成してもよい。
このように、超薄型ＴＦＴ基板層の表示素子領域及び画素開口部に対応するマイクロレンズ周囲にブラックマスク作用のアルミニウムなどの反射膜を形成し、強い入射光の不要な部分を反射させ、且つ液晶への遮光作用をさせることで、コントラストを高めて画質向上させ、液晶温度上昇を低減させてＬＣＤの高輝度化、長寿命化を図るのが好ましい。
For example, in the case of the etching method, high refraction occurs in the reflective film forming surface side of the transparent glass substrate in which the
After the microlens
In other words, the
Further, in the case of the stamp method, a
When the film thickness accuracy of the transparent glass (stack substrate) 66 by single-side polishing or double-side polishing becomes a problem, spin coating or the like is performed after filling the high refractive index
In this way, a reflective film such as aluminum having a black mask function is formed around the microlens corresponding to the display element region and the pixel opening of the ultra-thin TFT substrate layer, and an unnecessary portion of strong incident light is reflected, and It is preferable to increase the contrast and improve the life of the LCD by increasing the contrast and improving the image quality by reducing the liquid crystal temperature by blocking the liquid crystal.
上記した本発明を適用した透過型ＬＣＤの製造方法では、多孔質Ｓｉ層分離法、水素イオン注入層分離法、裏面加工法またはＳｉエッチング法により、石英ガラス基板上に透明絶縁膜を介して単結晶Ｓｉ層が形成されたＳＯＩ基板を形成した後に、（１）単結晶Ｓｉ層の表示領域をエッチングして透明絶縁層を露出させ、ＣＶＤなどの水素アニール及びＳｉエピタキシャル成長により周辺回路領域に高結晶性単結晶Ｓｉ層を形成し、同時に表示領域にポリＳｉ層を形成し、高結晶性単結晶Ｓｉ層内にシステムＬＳＩを含むＬＣＤ周辺回路部を、ポリＳｉ層内に表示素子部を形成し、若しくは（２）ＣＶＤなどの水素アニール及びＳｉエピタキシャル成長により表示領域及び周辺回路領域に高結晶性単結晶Ｓｉ層を形成し、この高結晶性単結晶Ｓｉ層内にシステムＬＳＩを含むＬＣＤ周辺回路部及び表示素子部を形成することによって、低リーク電流特性のポリＳｉ或いは高結晶性単結晶ＳｉＴＦＴからなる表示部と、高移動度の高結晶性単結晶ＳｉＴＦＴからなるシステムＬＳＩを含むＬＣＤ周辺回路部が同一のＳＯＩ層内に形成できるので、プロジェクタなどの強い入射光による表示用ＴＦＴのリーク電流が低減し、高精細、高輝度、高機能なプロジェクタ用透過型ＬＣＤを得ることができる。 In the above-described transmissive LCD manufacturing method to which the present invention is applied, a porous Si layer separation method, a hydrogen ion implantation layer separation method, a back surface processing method or a Si etching method is used to form a single layer through a transparent insulating film on a quartz glass substrate. After forming the SOI substrate on which the crystalline Si layer is formed, (1) the display region of the single crystal Si layer is etched to expose the transparent insulating layer, and a high crystal is formed in the peripheral circuit region by hydrogen annealing such as CVD and Si epitaxial growth. Forming a single crystal Si layer, simultaneously forming a poly Si layer in the display region, forming an LCD peripheral circuit portion including a system LSI in the high crystal single crystal Si layer, and forming a display element portion in the poly Si layer. (2) A high crystalline single crystal Si layer is formed in the display region and the peripheral circuit region by hydrogen annealing such as CVD and Si epitaxial growth, and this high crystalline single crystal By forming the LCD peripheral circuit portion including the system LSI and the display element portion in the i layer, a display portion made of poly-Si or high-crystalline single-crystal Si TFT having a low leakage current characteristic and a high-mobility high-crystalline single-crystal Since the LCD peripheral circuit part including the system LSI made of crystalline Si TFT can be formed in the same SOI layer, the leakage current of the display TFT due to strong incident light such as a projector is reduced, and the projector has high definition, high brightness, and high function. A transmissive LCD can be obtained.
また、多孔質Ｓｉ層分離法、水素イオン注入層分離法、裏面加工法またはＳｉエッチング法により、石英ガラス基板上に透明絶縁層を介して歪印加半導体層のＳｉＧｅ層が形成されたＳＯＩ基板を形成した後に、（１）ＳｉＧｅ層の表示領域をエッチングして透明絶縁層を露出させ、ＣＶＤなどの水素アニール及びＳｉエピタキシャル成長により周辺回路領域に歪Ｓｉ層を形成し、同時に表示領域にポリＳｉ層を形成し、歪Ｓｉ層内にシステムＬＳＩを含むＬＣＤ周辺回路部を、ポリＳｉ層内に表示素子部を形成し、若しくは（２）ＣＶＤなどの水素アニール及びＳｉエピタキシャル成長により表示領域及び周辺回路領域に歪Ｓｉ層を形成し、歪Ｓｉ層内に周辺回路部及び表示素子部を形成することによって、低リーク電流特性で従来に比べ１．７６倍の高い電子移動度の歪ＳｉＴＦＴからなる表示部及び周辺回路部が同一のＳＯＩ層内に形成できるので、プロジェクタなどの強い入射光による表示用ＴＦＴのリーク電流が低減し、高精細、高輝度、高機能なプロジェクタ用透過型ＬＣＤを得ることができる。 In addition, an SOI substrate in which a SiGe layer of a strain applying semiconductor layer is formed on a quartz glass substrate through a transparent insulating layer by a porous Si layer separation method, a hydrogen ion implantation layer separation method, a back surface processing method, or a Si etching method. After the formation, (1) the display region of the SiGe layer is etched to expose the transparent insulating layer, a strained Si layer is formed in the peripheral circuit region by hydrogen annealing such as CVD and Si epitaxial growth, and at the same time a poly-Si layer is formed in the display region LCD peripheral circuit part including system LSI in strained Si layer and display element part in poly Si layer, or (2) Display region and peripheral circuit region by hydrogen annealing such as CVD and Si epitaxial growth By forming a strained Si layer in the strained Si layer and forming a peripheral circuit portion and a display element portion in the strained Si layer, the low leakage current characteristic is achieved compared to the conventional case. Since the display part and peripheral circuit part made of strained Si TFTs with a high electron mobility of .76 times can be formed in the same SOI layer, the leakage current of the display TFTs due to strong incident light such as projectors is reduced, and high definition, A high-brightness and high-function transmissive LCD for projectors can be obtained.
また、強力な接着力で糊残りのないＵＶテープなどで種子基板及び支持基板の表面保護及び保持を行い、多孔質Ｓｉ層の高圧流体ジェット分離、レーザー分離、レーザーウオーター分離などにより種子基板を分離し、分離後はＵＶ照射硬化で容易にＵＶテープ剥離ができるために、石英ガラス基板上のＳＯＩ層形成の歩留及び生産性が高い。 In addition, the surface of the seed substrate and support substrate is protected and held with UV tape that has strong adhesive force and no adhesive residue, and the seed substrate is separated by high-pressure fluid jet separation, laser separation, laser water separation of the porous Si layer. In addition, after separation, UV tape can be easily peeled off by UV irradiation curing, so that the yield and productivity of forming the SOI layer on the quartz glass substrate are high.
更に、表示用ＴＦＴの上部、側面及び下部に遮光性金属層を形成し、しかもアース電位としているために、強い入射光によるＴＦＴへの漏れ光が無くなり、チャージアップを防止するのでＴＦＴ特性が向上し画質が向上する。 Furthermore, a light-shielding metal layer is formed on the top, side and bottom of the TFT for display, and since it is at ground potential, there is no leakage light to the TFT due to strong incident light, preventing charge-up and improving TFT characteristics. The image quality is improved.
また、石英ガラス基板表面の画素開口部以外の表示領域及び周辺回路領域に遮光性金属層を形成することによって、反射光による表示素子部及び周辺回路部のＴＦＴリークを防止できるので、高輝度、高精細化のプロジェクタ用透過型ＬＣＤを得ることができる。更に、この遮光性金属層をアース電位とすることで、静電気ダメージに強いＴＦＴとなり、歩留、品質が向上し、コストダウンが実現する。 Further, by forming a light-shielding metal layer in the display area and peripheral circuit area other than the pixel opening on the surface of the quartz glass substrate, TFT leakage of the display element part and the peripheral circuit part due to reflected light can be prevented, so that high luminance, A high-definition transmissive LCD for a projector can be obtained. Furthermore, by setting this light-shielding metal layer to the ground potential, the TFT becomes strong against electrostatic damage, yield and quality are improved, and cost reduction is realized.
ところで、石英ガラス基板上の遮光性金属層４３と対向基板の透明電極２３間の電界印加方法による画素開口部周囲及び周辺回路領域のノーマルブラック液晶化による模式的な平面図（図３２参照）及び断面図（図３３参照）を示す。
By the way, a schematic plan view (see FIG. 32) of normal black liquid crystal around the pixel opening and the peripheral circuit area by the electric field application method between the light-shielding
図３３（ａ）の場合は対向基板側から光が入射するので、表示素子部に対応する対向基板表面に反射膜７３が形成されているノーマルブラック液晶動作の模式的な断面図である。
例えばＴＮモード液晶のノーマルホワイト液晶状態において、対向基板の透明電極２３と石英ガラスからなるＴＦＴ基板上の画素開口部以外の遮光性金属層４３間に任意の交流電界を常時印加しておくことで、表示部のＴＦＴ上を含む画素開口部周囲に液晶のノーマルブラック領域（遮光領域）９０が形成されるために、画素間の横方向電界による液晶配向乱れ防止と画素間の光洩れ防止が出来るので、洩れ光による表示素子リーク電流防止、コントラスト向上を図ることができる。
このように、液晶のノーマルブラック領域が表示部の画素開口部周囲及び周辺回路領域全体を覆うことで洩れ光防止できるので、ＴＦＴ洩れ光リーク対策プロセス低減によるＴＦＴプロセスのスリム化、例えばＴＦＴフォトマスク枚数削減、ＣＭＰ工程削減などでのコストダウンが実現する。
In the case of FIG. 33A, since light enters from the counter substrate side, it is a schematic cross-sectional view of normal black liquid crystal operation in which a
For example, in a normal white liquid crystal state of a TN mode liquid crystal, an arbitrary AC electric field is always applied between the
As described above, since the normal black region of the liquid crystal covers the periphery of the pixel opening of the display unit and the entire peripheral circuit region, leakage light can be prevented. Cost reduction is achieved by reducing the number of sheets and the CMP process.
図３３（ｂ）の場合は石英ガラス基板側から光が入射するので、表示素子部に対応する対向基板表面には反射膜７３不要のノーマルブラック液晶動作の模式的な断面図である。
この場合にも、例えばＴＮモード液晶のノーマルホワイト液晶状態において、対向基板の透明電極２３と石英ガラスからなるＴＦＴ基板上の画素開口部以外の遮光性金属層間４３に任意の交流電界を常時印加しておくことで、表示部のＴＦＴ上を含む画素開口部周囲に液晶のノーマルブラック領域（遮光領域）９０が形成されるために、画素間の横方向電界による液晶配向乱れ防止と画素間の光洩れ防止が出来るので、洩れ光による表示素子リーク電流防止、コントラスト向上を図ることができる。
そして同様に、液晶のノーマルブラック領域が少なくとも表示部の画素開口部周囲を覆うことで洩れ光防止できるので、ＴＦＴ洩れ光リーク対策プロセス低減によるＴＦＴプロセスのスリム化、例えばＴＦＴフォトマスク枚数削減、ＣＭＰ工程削減などでのコストダウンが実現すが、更に表示素子部に対応する対向基板表面には反射膜７３が不要なので、対向基板のコストダウンが可能となる。
尚、この場合には周辺回路領域全体には遮光性金属層があるので光入射しないので、必ずしも周辺回路領域全体にはノーマルブラック液晶化する必要はない。
In the case of FIG. 33B, since light enters from the quartz glass substrate side, it is a schematic cross-sectional view of normal black liquid crystal operation that does not require the
Also in this case, for example, in a normal white liquid crystal state of a TN mode liquid crystal, an arbitrary alternating electric field is always applied to the
Similarly, since the normal black region of the liquid crystal covers at least the periphery of the pixel opening of the display portion, leakage light can be prevented, so that the TFT process can be streamlined by reducing the TFT leakage light leakage countermeasure process, for example, reducing the number of TFT photomasks, CMP Although the cost can be reduced by reducing the number of processes, since the
In this case, since there is a light-shielding metal layer in the entire peripheral circuit region, light does not enter, and therefore it is not always necessary to use normal black liquid crystal in the entire peripheral circuit region.
また、図３４で示す様に、画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子領域の遮光性金属層９７と対向基板の透明電極２３間に任意の固定電界を常時印加し、画素開口部周囲の遮光性金属層９８と対向基板の透明電極２３間を任意の交流電界を常時印加とすることで、画素開口部周囲のノーマルブラック液晶領域が表示素子領域を覆うので漏れ光防止が出来て、電界の直流成分での液晶焼き付きを低減し、ゲート電位変動防止による表示素子特性安定化を図るのが好ましい。
尚、この時に画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子領域の遮光性金属層９７を電気的にフローティングとして電界を常時印加せず、画素開口部周囲の遮光性金属層９８と対向基板の透明電極２３間を任意の交流電界を常時印加することによる画素開口部周囲のノーマルブラック液晶領域で表示素子領域を覆うことで漏れ光を防止し、電界の直流成分での液晶焼き付きを低減し、ゲート電位変動防止による表示素子特性安定化ようにしてもよい。
Further, as shown in FIG. 34, an arbitrary fixed electric field is always applied between the light-shielding metal layer 97 in the display element region formed by etching around the display element portion in the periphery of the pixel opening and the
At this time, the light-shielding metal layer 97 in the display element region formed by etching around the display element portion in the periphery of the pixel opening portion is electrically floating so that an electric field is not constantly applied, and the light-shielding property around the pixel opening portion is not applied. Leakage light is prevented by covering the display element region with a normal black liquid crystal region around the pixel opening by constantly applying an arbitrary AC electric field between the metal layer 98 and the
或いは、図３５で示す様に、ガラスからなる支持基板上に画素開口部形成して相互に層間絶縁した二重の遮光性金属層を形成し、上部の遮光性金属層９９上に絶縁膜を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層９９と対向基板の透明電極２３間に任意の固定電界を常時印加し、下部の遮光性金属層１００と対向基板の透明電極２３間に任意の交流電界を常時印加して、表示素子部を含む画素開口部周囲及び周辺回路部全体をノーマルブラック液晶領域が常時覆うようにすることで、漏れ光防止が出来て、電界の直流成分による特に画素開口部周囲の液晶焼き付きを低減し、ゲート電位変動防止による表示素子特性安定化を図るのが好ましい。
この時に、表示素子領域の下部の遮光性金属層１００は上部の遮光性金属層９９よりも大きく、且つ画素電極２１を下部の遮光性金属層１００よりも大きくして図３５中符号Ｘで示す領域で層間絶縁層等を介して画素電極２１と下部の遮光性金属層１００をオーバーラップさせることで、隙間による光抜けがないようにすることが好ましい。
Alternatively, as shown in FIG. 35, a pixel opening is formed on a support substrate made of glass to form a double light-shielding metal layer with interlayer insulation therebetween, and an insulating film is formed on the upper light-shielding
At this time, the light-shielding
或いは、図３６で示す様に、表示素子部を含む画素開口部周囲及び周辺回路部全体にノーマルブラック液晶領域が常時形成されるように、任意の固定電界または／及び任意の交流電界を常時印加することで、表示領域の液晶焼き付き等の液晶動作不具合を防止し、表示部及び周辺回路領域内のＴＦＴのゲート電位変動による特性悪化を防止し、ノーマルブラック液晶化用回路の負荷低減を図ることが好ましい。 Alternatively, as shown in FIG. 36, an arbitrary fixed electric field and / or an arbitrary AC electric field is always applied so that the normal black liquid crystal region is always formed around the pixel opening including the display element portion and the entire peripheral circuit portion. This prevents liquid crystal operation troubles such as liquid crystal burn-in in the display area, prevents deterioration of characteristics due to gate potential fluctuations of TFTs in the display area and the peripheral circuit area, and reduces the load on the normal black liquid crystal conversion circuit. Is preferred.
ここで、図３６（ａ）では、ＴＦＴ基板上の遮光性金属層９８を表示領域Ｆと周辺回路領域Ｅに分割し、対向基板の共通透明電極２３と周辺回路領域の遮光性金属層Ｅ間及び画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層９７（Ｇ）間には任意の固定電界を常時印加し、対向基板の共通透明電極２３と画素開口部周囲の遮光性金属層Ｆ間には任意の交流電界を常時印加して形成したノーマルブラック液晶領域で表示素子部及び周辺回路部全体を覆っている。
尚、この時にノーマルブラック液晶化用回路の負荷低減のために、対向基板の共通透明電極２３と周辺回路領域の遮光性金属層Ｅ間には必ずしも固定電界を印加しなくてもよく、例えば周辺回路領域の遮光性金属層Ｅは電気的オープンとして電界印加しなくてもよい。
Here, in FIG. 36A, the light shielding metal layer 98 on the TFT substrate is divided into a display area F and a peripheral circuit area E, and between the common
At this time, in order to reduce the load of the normal black liquid crystal circuit, it is not always necessary to apply a fixed electric field between the common
また、図３６（ｂ）では、ＴＦＴ基板上の遮光性金属層９８を表示領域Ｆと周辺回路領域Ｅに分割し、それに対応する対向基板の透明電極２３も表示領域Ｃと周辺回路領域Ｂに分割し、対向基板の表示領域の透明電極Ｃと画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層９７（Ｇ）の間及び対向基板の周辺回路領域の透明電極Ｂと周辺回路領域の遮光性金属層Ｅの間には任意の固定電界を常時印加し、対向基板の表示領域の透明電極Ｃと画素開口部周囲の遮光性金属層Ｆの間には任意の交流電界を常時印加して形成したノーマルブラック液晶領域で表示素子部及び周辺回路部全体を覆っている。
尚、この時にノーマルブラック液晶化用回路の負荷低減のために、対向基板の周辺回路領域の透明電極Ｂと支持基板の周辺回路領域の遮光性金属層Ｅ間には必ずしも固定電界を印加しなくてもよく、例えば対向基板の周辺回路領域の透明電極Ｂと支持基板の周辺回路領域の遮光性金属層Ｅは電気的オープンとして電界印加しなくてもよい。
この時に、対向基板の表示領域の透明電極Ｃは、ＴＦＴ基板上の表示領域の遮光性金属層Ｆよりも大きくして、ＴＦＴ基板上の周辺回路領域の遮光性金属層Ｅとオーバーラップさせることで、ＴＦＴ基板上の表示領域の遮光性金属層Ｆと周辺回路領域の遮光性金属層Ｅの隙間から光洩れしないようにするのが好ましい。
In FIG. 36B, the light-shielding metal layer 98 on the TFT substrate is divided into the display area F and the peripheral circuit area E, and the corresponding
At this time, a fixed electric field is not necessarily applied between the transparent electrode B in the peripheral circuit region of the counter substrate and the light-shielding metal layer E in the peripheral circuit region of the support substrate in order to reduce the load of the circuit for converting the normal black liquid crystal. For example, the transparent electrode B in the peripheral circuit region of the counter substrate and the light-shielding metal layer E in the peripheral circuit region of the support substrate may be electrically open and no electric field application is required.
At this time, the transparent electrode C in the display area of the counter substrate is made larger than the light shielding metal layer F in the display area on the TFT substrate so as to overlap the light shielding metal layer E in the peripheral circuit area on the TFT substrate. Therefore, it is preferable to prevent light from leaking from the gap between the light shielding metal layer F in the display area on the TFT substrate and the light shielding metal layer E in the peripheral circuit area.
また、図３６（ｃ）では、ＴＦＴ基板上の遮光性金属層９８を表示領域Ｆと周辺回路領域Ｅに分割し、それに対応する対向基板の透明電極２３も表示領域Ｃと周辺回路領域Ｂに分割し、表示領域Ｃ内に表示素子部に対応したブラックマスクの反射膜Ｄを形成し、対向基板の表示領域Ｃと画素開口部周囲内の表示素子部周りをエッチングしてアイランド化した表示素子部の遮光性金属層９７（Ｇ）の間及び対向基板２３の周辺回路領域の透明電極Ｂと周辺回路領域の遮光性金属層Ｅの間には任意の固定電界を常時印加し、対向基板の表示領の域透明電極Ｃと画素開口部周囲の遮光性金属層Ｆの間には任意の交流電界を常時印加して形成したノーマルブラック液晶領域で表示素子部及び周辺回路部全体を覆っている。
尚、この時にノーマルブラック液晶化用回路の負荷低減のために、対向基板の周辺回路領域の透明電極Ｂと支持基板の周辺回路領域の遮光性金属層Ｅ間には必ずしも固定電界を印加しなくてもよく、例えば対向基板の周辺回路領域の透明電極Ｂと支持基板の周辺回路領域の遮光性金属層Ｅは電気的オープンとして電界印加しなくてもよい。
この時も、対向基板の表示領域の透明電極Ｃは、ＴＦＴ基板上の表示領域の遮光性金属層Ｆよりも大きくして、ＴＦＴ基板上の周辺回路領域の遮光性金属層Ｅとオーバーラップさせることで、ＴＦＴ基板上の表示領域の遮光性金属層Ｆと周辺回路領域の遮光性金属層Ｅの隙間から光洩れしないようにするのが好ましい。
In FIG. 36C, the light-shielding metal layer 98 on the TFT substrate is divided into the display region F and the peripheral circuit region E, and the
At this time, a fixed electric field is not necessarily applied between the transparent electrode B in the peripheral circuit region of the counter substrate and the light-shielding metal layer E in the peripheral circuit region of the support substrate in order to reduce the load of the circuit for converting the normal black liquid crystal. For example, the transparent electrode B in the peripheral circuit region of the counter substrate and the light-shielding metal layer E in the peripheral circuit region of the support substrate may be electrically open and no electric field application is required.
Also at this time, the transparent electrode C in the display area of the counter substrate is made larger than the light-shielding metal layer F in the display area on the TFT substrate and overlaps the light-shielding metal layer E in the peripheral circuit area on the TFT substrate. Thus, it is preferable to prevent light from leaking from the gap between the light shielding metal layer F in the display area on the TFT substrate and the light shielding metal layer E in the peripheral circuit area.
上記における交流電界印加とは、対向基板の透明電極の基準電位（Ｖcom）と０（Ｖ）または任意のプラス（Ｖ）または任意のマイナス（Ｖ）電位に正極性と負極性の階調電圧からなる映像信号を印加した遮光性金属層との間で形成される交流電界などを示しているが、画質に悪影響与えない範囲内で液晶の種類や液晶モードに適合した他の任意の周波数及び／または電位の交流信号、例えばクロック信号、ディスプレイタイミング信号、水平同期信号、垂直同期信号等の表示制御信号、更にはこれらによる水平駆動回路制御信号、垂直駆動回路制御信号、映像信号処理回路制御信号、画素電位制御回路信号等の回路制御信号、或いはこの表示制御信号と回路制御信号を合成した交流信号などによる交流電界を常時印加してもよい。
また、固定電界印加とは、対向基板の透明電極の基準電位（Ｖcom）と０（Ｖ）または任意のプラス（Ｖ）または任意のマイナス（Ｖ）電位の遮光性金属層との間で形成される直流電界或いは前記直流電界と前記交流電界の合成された電界などを示している。
尚、本発明のノーマルブラック液晶動作化の実施例はＴＮモード液晶で説明したが、他のモード液晶においても適用できることは言うまでもない。
The application of the alternating electric field in the above means that the reference potential (Vcom) and 0 (V) or any plus (V) or any minus (V) potential of the transparent electrode of the counter substrate is changed from positive and negative gradation voltages. An AC electric field formed between the light-shielding metal layer to which the video signal is applied is shown, but any other frequency and / or frequency suitable for the type of liquid crystal and the liquid crystal mode within a range that does not adversely affect the image quality Or an alternating current signal of potential, for example, a display control signal such as a clock signal, a display timing signal, a horizontal synchronization signal, a vertical synchronization signal, and further a horizontal drive circuit control signal, a vertical drive circuit control signal, a video signal processing circuit control signal, An AC electric field may be always applied by a circuit control signal such as a pixel potential control circuit signal or an AC signal obtained by synthesizing the display control signal and the circuit control signal.
The fixed electric field application is formed between the reference potential (Vcom) of the transparent electrode of the counter substrate and the light-shielding metal layer having 0 (V), any plus (V), or any minus (V) potential. A DC electric field or a combined electric field of the DC electric field and the AC electric field.
Although the embodiment of the normal black liquid crystal operation of the present invention has been described with the TN mode liquid crystal, it is needless to say that it can be applied to other mode liquid crystals.
また、ガラスからなる支持基板、例えば石英ガラス基板上の遮光性金属層を活用することでＩＰＳモード（インプレーン・スイッチング方式）液晶のプロジェクタ用透過型ＬＣＤに適用して視野角特性を改善することができる（図３７参照）。
具体的には、
[１]画素開口部９４が石英ガラス基板上の遮光性金属層９８に囲まれた構造において、一方の遮光性金属層上に対向電極９１を形成し、その反対側の遮光性金属層上に画素用ＴＦＴ９２及び画素電極９３を形成して全面にポリイミド等の配向膜形成し、対向電極９１及び画素電極９３と平行或いは適当な角度例えば４５°斜めにバフラビングで配向処理することで、液晶を対向電極９１及び画素電極９３と平行或いは適当な角度例えば４５°斜めに配向させる。
[２]この時に、透明電極無しの対向基板にも全面にポリイミド等の配向膜を形成し、同様な方向或いは適当な角度にバフラビングで配向処理するのが望ましい。但し、ＴＦＴ基板側の液晶配向処理のみで充分な場合には対向基板側には配向膜は不要であり、透明電極及び配向膜が不要でのコストダウンが可能となる。
[３]ノーマルホワイト液晶状態の場合には対向電極９１と画素電極９３間には横方向の電界は印加されていないが、映像信号が画素用ＴＦＴ９２に印加されるとＴＦＴが動作して画素電極９３の電位が低下し、対向電極９１と画素電極９３間にその電位差に応じた横方向の電界が発生し、液晶を電界の大きさに応じて横方向に移動（上からみると回転）させ、映像信号に応じて液晶をスイッチングして光をオン或いはオフさせる。これにより、液晶の上下左右方向からの視野角特性を改善することができる。
[４]ここで、横方向の電界は画素開口部９４の中央部の平行電界部９５と、対向電極９１及び画素電極９３付近の斜め電界部９６に分けられるが、この斜め電界部９６は液晶動作が均一でなく、光漏れが発生しやすいことが知られている。
[５]本発明を適用した透過型ＬＣＤでは、予め形成されている石英ガラス基板上の遮光性金属層９８でこの斜め電界部９６を遮光しているので、その光漏れを抑えることができる。なお、ＩＰＳ方式の透過型ＬＣＤでは、横方向の電界を利用するので、対向基板に透明電極は不要であり、コストダウンが可能となる。
In addition, by utilizing a light-shielding metal layer on a support substrate made of glass, for example, a quartz glass substrate, it can be applied to a transmissive LCD for projectors of IPS mode (in-plane switching method) to improve viewing angle characteristics. (See FIG. 37).
In particular,
[1] In a structure in which the pixel opening 94 is surrounded by the light-shielding metal layer 98 on the quartz glass substrate, the
[2] At this time, it is desirable to form an alignment film such as polyimide on the entire surface of the counter substrate without a transparent electrode, and to perform alignment treatment by bubbling in the same direction or an appropriate angle. However, when only the liquid crystal alignment treatment on the TFT substrate side is sufficient, an alignment film is unnecessary on the counter substrate side, and the cost can be reduced without the need for a transparent electrode and alignment film.
[3] In the normal white liquid crystal state, no horizontal electric field is applied between the
[4] Here, the horizontal electric field is divided into a parallel
[5] In the transmissive LCD to which the present invention is applied, since the oblique
また、石英ガラス基板表面には酸化セリウム等の研磨剤による光学研磨のナノメーターレベルのクラックが無数に存在してナノメーターレベルの凹凸が存在するが、この石英ガラス基板表面の研磨ダメージをエッチングし、発生したナノメーターレベルのエッチング溝を透明絶縁層若しくは透明絶縁層及び遮光性金属層の積層膜でカバーするので、種子基板と石英ガラス基板の貼り合せ不良、熱ストレスでのＳＯＩ構造の単結晶Ｓｉ層或いは歪Ｓｉ層への歪み等が低減し、ＴＦＴ特性劣化を防止できる。 In addition, there are innumerable nanometer-level cracks on the quartz glass substrate surface due to optical polishing with abrasives such as cerium oxide, and there are irregularities on the nanometer level. Since the generated nanometer-level etching grooves are covered with a transparent insulating layer or a laminated film of a transparent insulating layer and a light-shielding metal layer, a single crystal having an SOI structure due to poor bonding between the seed substrate and the quartz glass substrate and thermal stress Strain or the like to the Si layer or strained Si layer is reduced, and TFT characteristic deterioration can be prevented.
また、単結晶Ｓｉ層或いは歪Ｓｉ層と石英ガラス基板間に透明絶縁層として、ＳｉＯ２のみならずＳｉＯ２、Ｓｉ３Ｎ４及びＳｉＯ２の透明積層膜を用いる等、窒化系シリコン膜を含む透明絶縁層を用いることで、適当な膜厚の窒化系シリコン膜（例えばＳｉ３Ｎ４膜）により、液晶組立後やＴＦＴプロセス中の石英ガラス基板からのハロゲン元素（Ｎａイオンなど）汚染を防止できる。また、表示領域の単結晶Ｓｉ層或いは歪Ｓｉ層あるいはポリＳｉ層をエッチングして透明絶縁層を露出させるときに、エッチングストッパとして作用するので、歩留、品質を向上させることが出来る。 Also includes a transparent insulating layer between the single-crystal Si layer or the strained Si layer and the quartz glass substrate, or the like using SiO 2, Si 3 N 4 and SiO 2 transparent laminated film not only SiO 2, a nitride silicon film By using a transparent insulating layer, nitride silicon film (for example, Si 3 N 4 film) of appropriate thickness prevents contamination of halogen elements (Na ions, etc.) from the quartz glass substrate after liquid crystal assembly or during the TFT process. it can. Further, when the transparent insulating layer is exposed by etching the single crystal Si layer, the strained Si layer, or the poly Si layer in the display region, the yield and quality can be improved.
また、単結晶Ｓｉ或いは歪ＳｉＴＦＴからなるシステムＬＳＩを含むＬＣＤ周辺回路部と電子・正孔移動度制御したポリＳｉＴＦＴ或いは単結晶Ｓｉまたは歪ＳｉＴＦＴからなる表示部が一体化したＳＯＩ構造の超薄型ＴＦＴ基板層、また表示用ＴＦＴの上部、側部、下部、更には周辺回路用ＴＦＴの下部を遮光性金属層で覆うので強い入射光によるＴＦＴリーク電流の防止が実現し、高輝度、高精細、高機能なプロジェクタ用透過型ＬＣＤを得ることができる。 In addition, an ultra-thin SOI structure in which an LCD peripheral circuit part including a system LSI made of single crystal Si or strained Si TFT and a display part made of poly-Si TFT or single crystal Si or strained Si TFT controlled by electron / hole mobility are integrated. The TFT substrate layer and the upper, side, and lower parts of the display TFT, as well as the lower part of the peripheral circuit TFT, are covered with a light-shielding metal layer, which prevents the TFT leakage current due to strong incident light. A high-performance transmissive LCD for projectors can be obtained.
また、ＴＦＴ基板層形成した石英ガラス基板側から光を入射する方式の場合、画素開口部以外を反射及び遮光用金属膜で覆っているので、強い入射光による表示用ＴＦＴリーク電流が低減すると共に、周辺回路部のＴＦＴリーク電流無しが実現し、かつ対向基板側の表示素子対応ブラックマスクが不要となり、対向基板のコストダウンが実現する。 Further, in the case of a method in which light is incident from the side of the quartz glass substrate on which the TFT substrate layer is formed, the TFT leakage current for display due to strong incident light is reduced because the portions other than the pixel openings are covered with a reflective and light shielding metal film. In addition, the TFT leakage current in the peripheral circuit portion can be eliminated, and the black mask corresponding to the display element on the counter substrate side becomes unnecessary, so that the cost of the counter substrate can be reduced.
上記のように、本発明の実施例は主にプロジェクタ用透過型ＬＣＤで説明したが、本発明は直視用透過型ＬＣＤ、直視用半透過型ＬＣＤ、直視用反射型ＬＣＤ、プロジェクタ用反射型ＬＣＤ、上面発光型有機ＥＬ、下面発光型有機ＥＬ等の電気光学表示装置全般に適用できることは言うまでもない。 As described above, the embodiments of the present invention have been described mainly with the transmissive LCD for projectors. However, the present invention is directed to a transmissive LCD for direct viewing, a transflective LCD for direct viewing, a reflective LCD for direct viewing, and a reflective LCD for projectors. Needless to say, the present invention can be applied to all electro-optical display devices such as a top emission organic EL and a bottom emission organic EL.
９ ＵＶテープ
１０ 種子基板
１１ａ 低多孔質Ｓｉ層
１１ｂ 高多孔質Ｓｉ層
１１ｃ 低多孔質Ｓｉ層
１２ 単結晶Ｓｉ層
１３ 透明絶縁層
１３ａ 透明絶縁層
１３ｂ 透明絶縁層
１４ 遮光性金属層
１５ 高結晶性単結晶Ｓｉ層
１６ ポリＳｉ層
１７ ＳｉＯ２層
１８ 低反射金属膜
１９ 透明樹脂またはガラス膜
２０ ポリＳｉＴＦＴ部
２１ 透明電極
２２ 配向膜
２３ 透明電極
２４ 配向膜
２５ フレキシブル基板
２６ 反射防止膜
２７ 防塵ガラス
２８ 高熱伝導性モールド樹脂
２９ 反射膜
３０ 石英ガラス基板
４０ 対向基板
４１ 水素イオン注入層
４２ Ｐ＋＋型単結晶Ｓｉ層
４３ 遮光性金属層
４４ 反射膜
５０ 高屈折率透明樹脂
６５ 外部取り出し電極
６６ 透明ガラス基板
７０ ＬＣＤ周辺回路部
７１ ＴＦＴ
７２ ゲート絶縁膜
７３ ブラックマスク
７４ メッキ樹脂枠
８０ ガードリングストッパ
８１ａ ホルダ
８１ｂ ホルダ
８２ 高圧流体ジェット
８３ 微細ノズル
８４ スリット孔
９０ ノーマルブラック液晶領域
９１ 対向電極
９２ 画素用ＴＦＴ
９３ 画素電極
９４ 画素開口部
９５ 平行電界部
９６ 斜め電界部
９７ 表示素子領域の遮光性金属層
９８ 画素開口部周囲及び周辺領域回路全体の遮光性金属層
９９ 上部の遮光性金属層
１００ 下部の遮光性金属層
9
72
93 pixel electrode 94
Claims (122)
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer, etching the display region of the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer to expose the transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ことを特徴とする請求項１に記載の電気光学表示装置の製造方法。 After forming a second transparent insulating layer through a light-shielding metal layer having a pixel opening region opened in the transparent insulating layer exposed by the etching, a polycrystalline semiconductor layer or an amorphous layer whose crystal grain size is controlled in the display region 2. The method of manufacturing an electro-optic display device according to claim 1, wherein the second semiconductor semiconductor layer or the strained single crystal semiconductor layer is formed in the peripheral circuit region.
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer to form a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項１に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 1, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項２に記載の電気光学表示装置の製造方法。 The method for manufacturing an electro-optical display device according to claim 2, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項３に記載の電気光学表示装置の製造方法。 The method for manufacturing an electro-optical display device according to claim 3, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
該透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、
前記種子基板のイオン注入層に歪部形成する工程と、
前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出させる工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the seed substrate and the support substrate through the transparent insulating layer;
Forming a strained portion in the ion implantation layer of the seed substrate;
Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ことを特徴とする請求項７に記載の電気光学表示装置の製造方法。 After forming the second transparent insulating layer through the light-shielding metal layer having the pixel opening region opened in the transparent insulating layer exposed by the etching, a polycrystalline semiconductor layer or an amorphous layer in which the crystal grain size is controlled in the display region The method for manufacturing an electro-optic display device according to claim 7, wherein the second semiconductor crystal layer or the strained single crystal semiconductor layer is formed in the peripheral circuit region of the crystalline semiconductor layer.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
該透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、
前記種子基板のイオン注入層に歪部形成する工程と、
前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the seed substrate and the support substrate through the transparent insulating layer;
Forming a strained portion in the ion implantation layer of the seed substrate;
Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項７に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 7, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項８に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 8, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項９に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 9, wherein the transparent insulating layer includes at least a nitride-based silicon film.
該透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the support substrate and a seed substrate made of a single crystal semiconductor or a strain applied single crystal semiconductor through the transparent insulating layer;
Processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Etching the display region of the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer to expose the transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ことを特徴とする請求項１３に記載の電気光学表示装置の製造方法。 After forming the second transparent insulating layer through the light-shielding metal layer having the pixel opening region opened in the transparent insulating layer exposed by the etching, a polycrystalline semiconductor layer or an amorphous crystal whose crystal grain size is controlled in the display region The method for manufacturing an electro-optical display device according to claim 13, wherein the second semiconductor crystal layer or the strained single crystal semiconductor layer is formed in the peripheral circuit region as the crystalline semiconductor layer.
該透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the support substrate and a seed substrate made of a single crystal semiconductor or a strain applied single crystal semiconductor through the transparent insulating layer;
Processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項１３に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 13, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項１４に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 14, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項１５に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 15, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stopper layer bonded to the support substrate to expose the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer;
Etching the display region of the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer to expose the transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ことを特徴とする請求項１９に記載の電気光学表示装置の製造方法。 After forming a second transparent insulating layer through a light-shielding metal layer having a pixel opening region opened in the transparent insulating layer exposed by the etching, a polycrystalline semiconductor layer or an amorphous layer whose crystal grain size is controlled in the display region The method for manufacturing an electro-optic display device according to claim 19, wherein the second semiconductor crystal layer or the strained single crystal semiconductor layer is formed in the peripheral circuit region of the crystalline semiconductor layer.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層もしくは歪み印加の単結晶半導体層を露出させる工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a transparent insulating layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stopper layer bonded to the support substrate to expose the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applying single crystal semiconductor layer; and a second single crystal semiconductor layer or a strained single crystal in the display region A method for manufacturing an electro-optic display device, comprising: forming a display element portion in a semiconductor layer and forming a peripheral circuit portion in a second single crystal semiconductor layer or a strained single crystal semiconductor layer in a peripheral circuit region.
ことを特徴とする請求項１９に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optic display device according to claim 19, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項２０に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optical display device according to claim 20, wherein the transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項２１に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optic display device according to claim 21, wherein the transparent insulating layer includes at least a nitride-based silicon film.
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer, etching the display region of the first single-crystal semiconductor layer or the strain-applied single-crystal semiconductor layer to expose the second transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer to form a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項２５に記載の電気光学表示装置の製造方法。 26. The method of manufacturing an electro-optic display device according to claim 25, wherein at least the first transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項２６に記載の電気光学表示装置の製造方法。 27. The method of manufacturing an electro-optic display device according to claim 26, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項２５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 26. The method of manufacturing an electro-optic display device according to claim 25, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項２６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 27. The method of manufacturing an electro-optic display device according to claim 26, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項２５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a functioning microlens is formed, and a liquid crystal is sandwiched between a counter substrate with a microlens functioning as a condensing lens on the incident side and a driving substrate with a microlens functioning as a field lens on the output side. 26. A method of manufacturing the electro-optical display device according to 25.
ことを特徴とする請求項２６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a functioning microlens is formed, and the liquid crystal is sandwiched between a counter substrate with a microlens that functions as a condensing lens on the incident side and a driving substrate with a microlens that functions as a field lens on the output side. 27. A method of manufacturing the electro-optical display device according to 26.
ことを特徴とする請求項２５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens portion. The method for manufacturing an electro-optic display device according to claim 25, wherein:
ことを特徴とする請求項２６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 27. The method of manufacturing an electro-optic display device according to claim 26, wherein:
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
該第２の透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、
前記種子基板のイオン注入層に歪部を形成する工程と、
前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the seed substrate and the support substrate through the second transparent insulating layer;
Forming a strained portion in the ion implantation layer of the seed substrate;
Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Etching a display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the second transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
該第２の透明絶縁層を介して前記種子基板と前記支持基板を貼り合せる工程と、
前記種子基板のイオン注入層に歪部を形成する工程と、
前記種子基板を前記イオン注入層の歪部から分離し、前記イオン注入層の分離残りをエッチングして第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming an ion implantation layer at a predetermined depth of a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the seed substrate and the support substrate through the second transparent insulating layer;
Forming a strained portion in the ion implantation layer of the seed substrate;
Separating the seed substrate from the strained portion of the ion-implanted layer, and etching the remainder of the ion-implanted layer to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項３５に記載の電気光学表示装置の製造方法。 36. The method of manufacturing an electro-optic display device according to claim 35, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項３６に記載の電気光学表示装置の製造方法。 37. The method of manufacturing an electro-optical display device according to claim 36, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項３５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 36. The method of manufacturing an electro-optic display device according to claim 35, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項３６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 37. The method of manufacturing an electro-optical display device according to claim 36, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項３５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 36. The electro-optical display device according to claim 35, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項３６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 37. The electro-optical display device according to claim 36, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項３５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 36. The method of manufacturing an electro-optic display device according to claim 35, wherein:
ことを特徴とする請求項３６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 37. The method of manufacturing an electro-optical display device according to claim 36, wherein:
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
該第２の透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the support substrate and a seed substrate made of a single crystal semiconductor or a strain applied single crystal semiconductor through the second transparent insulating layer;
Processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Etching a display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the second transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
該第２の透明絶縁層を介して前記支持基板と単結晶半導体若しくは歪み印加の単結晶半導体からなる種子基板を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the support substrate and a seed substrate made of a single crystal semiconductor or a strain applied single crystal semiconductor through the second transparent insulating layer;
Processing the back surface of the seed substrate bonded to the support substrate to form a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項４５に記載の電気光学表示装置の製造方法。 46. The method of manufacturing an electro-optic display device according to claim 45, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項４６に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optic display device according to claim 46, wherein at least the first transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項４５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. By forming a microlens array and forming a transparent pixel electrode on the pixel opening, the entire surface of the driving substrate with a microlens formed on the entire surface of the microlens functioning as an incident condenser lens from the support substrate side 46. The method of manufacturing an electro-optical display device according to claim 45, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項４６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 47. The method of manufacturing an electro-optic display device according to claim 46, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項４５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 46. The electro-optical display device according to claim 45, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項４６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 47. The electro-optic display device according to claim 46, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項４５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens portion. 46. The method of manufacturing an electro-optical display device according to claim 45, wherein:
ことを特徴とする請求項４６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens portion. 47. The method of manufacturing an electro-optical display device according to claim 46, wherein:
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、
前記支持基板を貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第２の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stop layer to which the support substrate is bonded to expose the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer;
Etching a display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the second transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
前記種子基板の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層と前記支持基板の第２の透明絶縁層を貼り合せる工程と、
前記支持基板を貼り合せた前記種子基板及び前記エッチング停止層をエッチングして前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を露出させる工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Etching optical polishing damage on the surface of the support substrate made of a glass material to form a first transparent insulating layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Bonding the first single crystal semiconductor layer of the seed substrate or the strain-applied single crystal semiconductor layer and the second transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stop layer to which the support substrate is bonded to expose the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項５５に記載の電気光学表示装置の製造方法。 56. The method of manufacturing an electro-optic display device according to claim 55, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項５６に記載の電気光学表示装置の製造方法。 57. The method of manufacturing an electro-optic display device according to claim 56, wherein at least the first transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項５５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 56. The method of manufacturing an electro-optic display device according to claim 55, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項５６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 57. The method of manufacturing an electro-optic display device according to claim 56, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項５５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 56. The electro-optic display device according to claim 55, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項５６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 57. The electro-optic display device according to claim 56, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項５５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 56. The method of manufacturing an electro-optic display device according to claim 55, wherein:
ことを特徴とする請求項５６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light-shielding film is formed around the functioning microlens part, and the liquid crystal is a counter substrate with a microlens that functions as a condenser lens on the incident side and a drive substrate with a microlens that functions as a field lens on the output side. 57. The method of manufacturing an electro-optical display device according to claim 56, wherein:
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer, etching the display region of the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer to expose the first transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
前記種子基板上に前記多孔質半導体層を介して第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記種子基板を前記多孔質半導体層から分離する工程と、
前記多孔質半導体層の分離残りをエッチングし、前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a porous semiconductor layer on a seed substrate made of a single crystal semiconductor;
Forming a first single crystal semiconductor layer or a strain applied single crystal semiconductor layer on the seed substrate via the porous semiconductor layer; and
Forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Separating the seed substrate from the porous semiconductor layer;
Etching the separation residue of the porous semiconductor layer to form a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項６５に記載の電気光学表示装置の製造方法。 66. The method of manufacturing an electro-optic display device according to claim 65, wherein at least the third transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項６６に記載の電気光学表示装置の製造方法。 The method of manufacturing an electro-optic display device according to claim 66, wherein at least the third transparent insulating layer includes at least a nitride-based silicon film.
ことを特徴とする請求項６５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 66. The method of manufacturing an electro-optic display device according to claim 65, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項６６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 66. The method of manufacturing an electro-optical display device according to claim 66, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項６５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 66. The electro-optic display device according to claim 65, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項６６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 67. The electro-optical display device according to claim 66, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項６５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 66. The method of manufacturing an electro-optic display device according to claim 65, wherein the electrode is sandwiched.
ことを特徴とする請求項６６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light-shielding film is formed around the functioning microlens part, and the liquid crystal is a counter substrate with a microlens that functions as a condenser lens on the incident side and a driving substrate with a microlens that functions as a field lens on the output side. 67. The method of manufacturing an electro-optical display device according to claim 66, wherein:
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工により第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first transparent insulating layer on a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Forming a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer by backside processing of the seed substrate bonded to the support substrate;
Etching the display region of the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer to expose the first transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板を裏面加工により第１の単結晶半導体層若しくは歪み印加の単結晶半導体層を形成する工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first transparent insulating layer on a seed substrate made of a single crystal semiconductor or a strain-applied single crystal semiconductor;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Forming a first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer by backside processing of the seed substrate bonded to the support substrate;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項７５に記載の電気光学表示装置の製造方法。 76. The method of manufacturing an electro-optic display device according to claim 75, wherein at least the third transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項７６に記載の電気光学表示装置の製造方法。 77. The method of manufacturing an electro-optic display device according to claim 76, wherein at least the third transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項７５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 76. The method of manufacturing an electro-optical display device according to claim 75, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項７６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening, so that a light-shielding film is formed around the microlens portion that functions as an incident condensing lens from the support substrate side and the entire surface of the driving substrate with a microlens 77. The method of manufacturing an electro-optical display device according to claim 76, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項７５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 76. The electro-optical display device according to claim 75, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項７６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 77. The electro-optical display device according to claim 76, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項７５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light-shielding film is formed around the functioning microlens part, and the liquid crystal is a counter substrate with a microlens that functions as a condenser lens on the incident side and a driving substrate with a microlens that functions as a field lens on the output side. 76. The method of manufacturing an electro-optical display device according to claim 75, wherein:
ことを特徴とする請求項７６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 77. The method of manufacturing an electro-optic display device according to claim 76, wherein the electrode is sandwiched.
該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングする工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層の表示領域をエッチングして前記第１の透明絶縁層を露出する工程と、
表示領域に結晶粒径制御した多結晶半導体層若しくは非晶質半導体層を、周辺回路領域に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
前記表示領域の結晶粒径制御した多結晶半導体層若しくは非晶質半導体層に表示素子部を、前記周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stop layer bonded to the support substrate;
Etching the display region of the first single crystal semiconductor layer or the strain applied single crystal semiconductor layer to expose the first transparent insulating layer;
Forming a polycrystalline semiconductor layer or an amorphous semiconductor layer with a controlled crystal grain size in the display region, and forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer in the peripheral circuit region;
A display element portion is formed in a polycrystalline semiconductor layer or an amorphous semiconductor layer whose crystal grain size is controlled in the display region, and a peripheral circuit portion is formed in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A process for producing an electro-optical display device comprising the steps.
該第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第１の透明絶縁層を形成する工程と、
該第１の透明絶縁層上に画素開口部領域が開口した遮光性金属層を形成する工程と、
該遮光性金属層上に第２の透明絶縁層を形成する工程と、
ガラス材料からなる支持基板表面の光学研磨ダメージをエッチングして第３の透明絶縁層を形成する工程と、
前記種子基板の第２の透明絶縁層と前記支持基板の第３の透明絶縁層を貼り合せる工程と、
前記支持基板と貼り合せた前記種子基板及び前記エッチング停止層をエッチングする工程と、
前記第１の単結晶半導体層若しくは歪み印加の単結晶半導体層上に第２の単結晶半導体層若しくは歪み単結晶半導体層を形成する工程と、
表示領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に表示素子部を、周辺回路領域の第２の単結晶半導体層若しくは歪み単結晶半導体層に周辺回路部を形成する工程を備える
ことを特徴とする電気光学表示装置の製造方法。 Forming a first single crystal semiconductor layer or a strain-applying single crystal semiconductor layer via an etching stop layer on a seed substrate made of a single crystal semiconductor;
Forming a first transparent insulating layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a light-shielding metal layer having a pixel opening region opened on the first transparent insulating layer;
Forming a second transparent insulating layer on the light-shielding metal layer;
Etching the optical polishing damage on the surface of the support substrate made of a glass material to form a third transparent insulating layer;
Bonding the second transparent insulating layer of the seed substrate and the third transparent insulating layer of the support substrate;
Etching the seed substrate and the etching stop layer bonded to the support substrate;
Forming a second single crystal semiconductor layer or a strained single crystal semiconductor layer on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer;
Forming a display element portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the display region and forming a peripheral circuit portion in the second single crystal semiconductor layer or the strained single crystal semiconductor layer in the peripheral circuit region. A method for manufacturing an electro-optic display device.
ことを特徴とする請求項８５に記載の電気光学表示装置の製造方法。 86. The method of manufacturing an electro-optic display device according to claim 85, wherein at least the third transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項８６に記載の電気光学表示装置の製造方法。 87. The method of manufacturing an electro-optic display device according to claim 86, wherein at least the third transparent insulating layer includes at least a nitride silicon film.
ことを特徴とする請求項８５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. By forming a microlens array and forming a transparent pixel electrode on the pixel opening, the entire surface of the driving substrate with a microlens and a light-shielding film formed around the microlens portion functioning as an incident condensing lens from the support substrate side 86. The method of manufacturing an electro-optic display device according to claim 85, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項８６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. By forming a microlens array and forming a transparent pixel electrode on the pixel opening, the entire surface of the driving substrate with a microlens and a light-shielding film formed around the microlens portion functioning as an incident condensing lens from the support substrate side 90. The method of manufacturing an electro-optic display device according to claim 86, wherein the liquid crystal is sandwiched between opposing substrates on which transparent electrodes are formed.
ことを特徴とする請求項８５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 86. The electro-optic display device according to claim 85, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as a condensing lens on the incident side and a driving substrate with a microlens that functions as a field lens on the exit side. Manufacturing method.
ことを特徴とする請求項８６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens that functions as a field lens on the emission side, and a plurality of pixel openings on the driving substrate with the microlens A microlens array in which the surface of the counter substrate corresponding to is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are embedded with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. Counter substrate with microlens that functions as a condensing lens on the incident side by forming a transparent electrode on the entire surface 87. The electro-optical display device according to claim 86, wherein the liquid crystal is sandwiched between a counter substrate with a microlens that functions as an incident-side condensing lens and a driving substrate with a microlens that functions as a field lens on an emission side. Manufacturing method.
ことを特徴とする請求項８５に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens portion. 86. The method of manufacturing an electro-optic display device according to claim 85, wherein:
ことを特徴とする請求項８６に記載の電気光学表示装置の製造方法。 Etching a plurality of pixel openings in the support substrate to form a plurality of arbitrarily concave microlens portions, and filling the microlens portions with a high refractive index transparent resin or an inorganic high refractive index transparent film to flatten the surface. A microlens array is formed, and a transparent pixel electrode is formed on the pixel opening to form a driving substrate with a microlens formed with a light-shielding film around the microlens portion functioning as a field lens on the emission side. The counter substrate surface corresponding to the plurality of pixel openings of the attached driving substrate is etched to form a plurality of arbitrarily concave microlens portions, and the microlens portions are formed with a high refractive index transparent resin or an inorganic high refractive index transparent film. By forming a microlens array that is embedded and flattened, and forming a transparent electrode on the entire surface, a condensing lens on the incident side is obtained. A counter substrate with a microlens formed with a light shielding film is formed around the functioning microlens part. 87. The method of manufacturing an electro-optical display device according to claim 86, wherein:
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層と前記対向基板に形成された透明電極の間に電界を印加しない
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optic display device, wherein no electric field is applied between the light-shielding metal layer and the transparent electrode formed on the counter substrate.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層と前記対向基板に形成された透明電極の間に電界を印加しない
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optic display device, wherein no electric field is applied between the light-shielding metal layer and the transparent electrode formed on the counter substrate.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界若しくは交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optic display device, wherein an arbitrary fixed electric field or an alternating electric field is constantly applied between the light-shielding metal layer and the transparent electrode formed on the counter substrate.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界若しくは交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optic display device, wherein an arbitrary fixed electric field or an alternating electric field is constantly applied between the light-shielding metal layer and the transparent electrode formed on the counter substrate.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に電界を印加せず、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is divided into a display region and a peripheral circuit region, and between the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element portion formed in the periphery of the pixel opening portion of the display region and the An electric field is not applied between the transparent electrode formed on the counter substrate and the light shielding metal layer in the entire peripheral circuit region, and the light shielding metal layer around the pixel opening in the transparent electrode formed on the counter substrate and the display region. An electro-optic display device characterized in that an arbitrary alternating electric field is always applied between them.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に電界を印加せず、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is divided into a display region and a peripheral circuit region, and between the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element portion formed in the periphery of the pixel opening portion of the display region and the An electric field is not applied between the transparent electrode formed on the counter substrate and the light shielding metal layer in the entire peripheral circuit region, and the light shielding metal layer around the pixel opening in the transparent electrode formed on the counter substrate and the display region. An electro-optic display device characterized in that an arbitrary alternating electric field is always applied between them.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に任意の固定電界を常時印加すると共に、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is divided into a display region and a peripheral circuit region, and between the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element portion formed into an island in the periphery of the pixel opening of the display region, and An arbitrary fixed electric field is always applied between the transparent electrode formed on the counter substrate and the light-shielding metal layer in the entire peripheral circuit region, and the light shielding around the transparent electrode formed on the counter substrate and the pixel opening in the display region is performed. An arbitrary optical field is always applied between the conductive metal layers.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極と表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板に形成された透明電極と周辺回路領域全体の遮光性金属層の間に任意の固定電界を常時印加すると共に、前記対向基板に形成された透明電極と表示領域の画素開口部周囲の遮光性金属層の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is divided into a display region and a peripheral circuit region, and between the transparent electrode formed on the counter substrate and the light-shielding metal layer of the display element portion formed into an island in the periphery of the pixel opening of the display region, and An arbitrary fixed electric field is always applied between the transparent electrode formed on the counter substrate and the light-shielding metal layer in the entire peripheral circuit region, and the light shielding around the transparent electrode formed on the counter substrate and the pixel opening in the display region is performed. An arbitrary optical field is always applied between the conductive metal layers.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と前記支持基板上の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板上の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板上の表示領域の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is divided into a display area and a peripheral circuit area, and the transparent electrode formed on the counter substrate is also divided into a display area and a peripheral circuit area. The transparent electrode in the display area of the counter substrate and the support substrate Between the light-shielding metal layer of the display element unit formed into an island within the periphery of the pixel opening of the display region and between the transparent electrode of the peripheral circuit region of the counter substrate and the light-shielding metal layer of the peripheral circuit region on the support substrate Always applies an arbitrary fixed electric field, and always applies an arbitrary alternating electric field between the transparent electrode in the display area of the counter substrate and the light-shielding metal layer around the pixel opening in the display area on the support substrate. An electro-optic display device.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、対向基板の表示領域の透明電極と前記支持基板の表示領域の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light shielding metal layer is divided into a display region and a peripheral circuit region, and the transparent electrode formed on the counter substrate is also divided into a display region and a peripheral circuit region, and the transparent electrode in the display region of the counter substrate and the display of the support substrate are divided. Between the light-shielding metal layer of the display element unit formed into an island in the periphery of the pixel opening of the region and between the transparent electrode of the peripheral circuit region of the counter substrate and the light-shielding metal layer of the peripheral circuit region of the support substrate An electro-optical display device, wherein a fixed electric field is always applied, and an arbitrary alternating electric field is always applied between the transparent electrode in the display region of the counter substrate and the light-shielding metal layer around the pixel opening.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、更に対向基板の表示領域内に表示素子部に対応した反射膜を形成し、対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light shielding metal layer is divided into a display area and a peripheral circuit area, the transparent electrode formed on the counter substrate is also divided into a display area and a peripheral circuit area, and the display element portion corresponds to the display element portion in the display area of the counter substrate. A reflective film is formed between the transparent electrode in the display region of the counter substrate and the light-shielding metal layer of the display element unit formed in the periphery of the pixel opening of the support substrate, and in the peripheral circuit region of the counter substrate An arbitrary fixed electric field is always applied between the light shielding metal layers in the peripheral circuit area of the support substrate, and the light shielding metal layers around the pixel openings of the support substrate and the transparent electrodes in the display area of the counter substrate are also applied. An electro-optic display device characterized in that an arbitrary AC electric field is always applied between them.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層を表示領域と周辺回路領域に分割し、前記対向基板に形成された透明電極も表示領域と周辺回路領域に分割し、更に対向基板の表示領域内に表示素子部に対応した反射膜を形成し、対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲内のアイランド化した表示素子部の遮光性金属層の間及び前記対向基板の周辺回路領域の透明電極と前記支持基板の周辺回路領域の遮光性金属層の間には任意の固定電界を常時印加すると共に、前記対向基板の表示領域の透明電極と前記支持基板の画素開口部周囲の遮光性金属層の間には任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light shielding metal layer is divided into a display area and a peripheral circuit area, the transparent electrode formed on the counter substrate is also divided into a display area and a peripheral circuit area, and the display element portion corresponds to the display element portion in the display area of the counter substrate. A reflective film is formed between the transparent electrode in the display region of the counter substrate and the light-shielding metal layer of the display element unit formed in the periphery of the pixel opening of the support substrate, and in the peripheral circuit region of the counter substrate An arbitrary fixed electric field is always applied between the light shielding metal layers in the peripheral circuit area of the support substrate, and the light shielding metal layers around the pixel openings of the support substrate and the transparent electrodes in the display area of the counter substrate are also applied. An electro-optic display device characterized in that an arbitrary AC electric field is always applied between them.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層は少なくとも画素開口部を形成して相互に層間絶縁した二重の遮光性金属層とし、上部の遮光性金属層上には絶縁層を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界を常時印加し、下部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is a double light-shielding metal layer that forms at least a pixel opening and is interlayer-insulated with each other. On the upper light-shielding metal layer, a display element portion and a peripheral circuit portion are provided via an insulating layer. An arbitrary fixed electric field is constantly applied between the upper light-shielding metal layer and the transparent electrode formed on the counter substrate, and between the lower light-shielding metal layer and the transparent electrode formed on the counter substrate. An electro-optic display device characterized by constantly applying an arbitrary alternating electric field.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
前記遮光性金属層は少なくとも画素開口部を形成して相互に層間絶縁した二重の遮光性金属層とし、上部の遮光性金属層上には絶縁層を介して表示素子部及び周辺回路部を形成し、上部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の固定電界を常時印加し、下部の遮光性金属層と前記対向基板に形成された透明電極の間に任意の交流電界を常時印加する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
The light-shielding metal layer is a double light-shielding metal layer that forms at least a pixel opening and is interlayer-insulated with each other. On the upper light-shielding metal layer, a display element portion and a peripheral circuit portion are provided via an insulating layer. An arbitrary fixed electric field is constantly applied between the upper light-shielding metal layer and the transparent electrode formed on the counter substrate, and between the lower light-shielding metal layer and the transparent electrode formed on the counter substrate. An electro-optic display device characterized by constantly applying an arbitrary alternating electric field.
ことを特徴とする請求項１０７に記載の電気光学表示装置。 The lower light-shielding metal layer around the pixel opening in the display area is larger than the upper light-shielding metal layer, and the pixel electrode formed in the pixel opening is made larger than the lower light-shielding metal layer so that the pixel electrode and the lower part 108. The electro-optical display device according to claim 107, wherein a part of the light-shielding metal layer is overlapped with an interlayer insulating film interposed therebetween.
ことを特徴とする請求項１０８に記載の電気光学表示装置。 The lower light-shielding metal layer around the pixel opening in the display area is larger than the upper light-shielding metal layer, and the pixel electrode formed in the pixel opening is made larger than the lower light-shielding metal layer so that the pixel electrode and the lower part 110. The electro-optical display device according to claim 108, wherein a part of the light-shielding metal layer is overlapped with an interlayer insulating film interposed therebetween.
該駆動基板と液晶を挟んで対向させた対向基板を備え、前記駆動基板上の画素開口部が前記遮光性金属層に囲まれた電気光学表示装置であって、
一方の遮光性金属層上に絶縁層を介して対向電極を形成し、その反対側の遮光性金属層上に絶縁層を介して表示素子及び画素電極を形成して全面に第１の配向膜を形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理し、対向基板の全面に第２の配向膜を形成して前記第１の配向膜と同様な方向或いは任意の角度に配向処理し、対向電極と画素電極の間の液晶に映像信号に応じた横方向の電界で液晶動作させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal sandwiched therebetween, and a pixel opening on the drive substrate surrounded by the light-shielding metal layer,
A counter electrode is formed on one light-shielding metal layer via an insulating layer, a display element and a pixel electrode are formed on the opposite light-shielding metal layer via an insulating layer, and a first alignment film is formed on the entire surface. And aligning with the counter electrode and the pixel electrode in parallel or at an arbitrary angle, forming a second alignment film on the entire surface of the counter substrate, and aligning in the same direction or at an arbitrary angle as the first alignment film. An electro-optic display device, wherein the liquid crystal is processed and the liquid crystal between the counter electrode and the pixel electrode is operated with a horizontal electric field corresponding to a video signal.
該駆動基板と液晶を挟んで対向させた対向基板を備え、前記駆動基板上の画素開口部が前記遮光性金属層に囲まれた電気光学表示装置であって、
一方の遮光性金属層上に絶縁層を介して対向電極を形成し、その反対側の遮光性金属層上に絶縁層を介して表示素子及び画素電極を形成して全面に第１の配向膜を形成し、対向電極及び画素電極と平行或いは任意の角度に配向処理し、対向基板の全面に第２の配向膜を形成して前記第１の配向膜と同様な方向或いは任意の角度に配向処理し、対向電極と画素電極の間の液晶に映像信号に応じた横方向の電界で液晶動作させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal sandwiched therebetween, and a pixel opening on the drive substrate surrounded by the light-shielding metal layer,
A counter electrode is formed on one light-shielding metal layer via an insulating layer, a display element and a pixel electrode are formed on the opposite light-shielding metal layer via an insulating layer, and a first alignment film is formed on the entire surface. And aligning with the counter electrode and the pixel electrode in parallel or at an arbitrary angle, forming a second alignment film on the entire surface of the counter substrate, and aligning in the same direction or at an arbitrary angle as the first alignment film. An electro-optic display device, wherein the liquid crystal is processed and the liquid crystal between the counter electrode and the pixel electrode is operated with a horizontal electric field corresponding to a video signal.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
画素開口部以外の表示部及び周辺回路部が前記遮光性金属層により遮光されている駆動基板側から光入射させて液晶動作させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optical display device, wherein a display portion other than a pixel opening portion and a peripheral circuit portion are caused to make light incident from a driving substrate side shielded from light by the light-shielding metal layer to operate a liquid crystal.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示装置であって、
画素開口部以外の表示部及び周辺回路部が前記遮光性金属層により遮光されている駆動基板側から光入射させて液晶動作させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display device comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween,
An electro-optical display device, wherein a display portion other than a pixel opening portion and a peripheral circuit portion are caused to make light incident from a driving substrate side shielded from light by the light-shielding metal layer to operate a liquid crystal.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって枠体に取り付けられた電気光学表示装置であって、
前記対向基板サイズよりも前記駆動基板サイズを大きくし、前記駆動基板上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層及び第２の単結晶半導体層若しくは歪み単結晶半導体層及び前記遮光性金属層面に絶縁層を介して前記高熱伝導性モールド樹脂を直接接触させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display panel comprising a counter substrate opposed to the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a frame body by a high thermal conductive mold resin,
The drive substrate size is made larger than the counter substrate size, the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer and the second single crystal semiconductor layer or the strain single crystal semiconductor layer on the drive substrate, and the The electro-optic display device, wherein the light-shielding metal layer surface is brought into direct contact with the high thermal conductive mold resin through an insulating layer.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって枠体に取り付けられた電気光学表示装置であって、
前記対向基板サイズよりも前記駆動基板サイズを大きくし、前記駆動基板上の第１の単結晶半導体層若しくは歪み印加の単結晶半導体層及び第２の単結晶半導体層若しくは歪み単結晶半導体層及び前記遮光性金属層面に絶縁層を介して前記高熱伝導性モールド樹脂を直接接触させる
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display panel comprising a counter substrate opposed to the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a frame body by a high thermal conductive mold resin,
The drive substrate size is made larger than the counter substrate size, the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer and the second single crystal semiconductor layer or the strain single crystal semiconductor layer on the drive substrate, and the The electro-optic display device, wherein the light-shielding metal layer surface is brought into direct contact with the high thermal conductive mold resin through an insulating layer.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
前記枠体の少なくとも内側部の最表面は黒色系金属膜を形成し、前記枠体の外側部の光入射側は白色系反射膜を形成し、更に、少なくとも前記枠体の外側部の光入射側表面に凹凸形状またはフィン形状または凹凸及びフィン形状を形成する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The outermost surface of at least the inner part of the frame body forms a black metal film, the light incident side of the outer part of the frame body forms a white reflective film, and at least the light incident of the outer part of the frame body An electro-optic display device characterized by forming an uneven shape, a fin shape, or an uneven shape and a fin shape on a side surface.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
前記枠体の少なくとも内側部の最表面は黒色系金属膜を形成し、前記枠体の外側部の光入射側は白色系反射膜を形成し、更に、少なくとも前記枠体の外側部の光入射側表面に凹凸形状またはフィン形状または凹凸及びフィン形状を形成する
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The outermost surface of at least the inner part of the frame body forms a black metal film, the light incident side of the outer part of the frame body forms a white reflective film, and at least the light incident of the outer part of the frame body An electro-optic display device characterized by forming an uneven shape, a fin shape, or an uneven shape and a fin shape on a side surface.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に、画素開口部以外の表示部及び周辺回路部が遮光性金属層により光遮光されている駆動基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The light incident side of the outer part forms a white-based reflective film, and the outermost surface of the inner part has a black metal film on the inside of the incident side of the frame. An electro-optical display device comprising: a drive substrate that is shielded from light by a light-shielding metal layer; and a space between the frame body, the drive substrate, and the counter substrate that is fixed with a highly heat conductive mold resin.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に、画素開口部以外の表示部及び周辺回路部が遮光性金属層により光遮光されている駆動基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The light incident side of the outer part forms a white-based reflective film, and the outermost surface of the inner part has a black metal film on the inside of the incident side of the frame. An electro-optical display device comprising: a drive substrate that is shielded from light by a light-shielding metal layer; and a space between the frame body, the drive substrate, and the counter substrate that is fixed with a highly heat conductive mold resin.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に対向基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A polycrystalline semiconductor layer having a controlled crystal grain size or an amorphous semiconductor layer having a second transparent insulating layer on the light-shielding metal layer, and a display element portion on a display region of the second transparent insulating layer; A first single crystal semiconductor layer or a strain-applied single crystal semiconductor layer on a peripheral circuit region of the second transparent insulating layer; and a peripheral circuit on the first single crystal semiconductor layer or the strain-applied single crystal semiconductor layer A driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer having a portion;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The light incident side of the outer side is formed with a white reflective film, and the outermost surface of the inner side is attached with a counter substrate on the inner side of the frame on which the black metal film is formed. An electro-optic display device comprising a body, a driving substrate, and a counter substrate which are filled and fixed.
該駆動基板と液晶を挟んで対向させた対向基板を備える電気光学表示パネルが、高熱伝導性モールド樹脂によって金属膜が表面に形成された樹脂枠体に取り付けられた電気光学表示装置であって、
外側部の光入射側は白色系反射膜を形成し、内側部の最表面は黒色系金属膜を形成した前記枠体の入射側の内側に対向基板を取り付け、高熱伝導性モールド樹脂で前記枠体と駆動基板及び対向基板間を充填して固着している
ことを特徴とする電気光学表示装置。 A support substrate made of a glass material etched with optical polishing damage, a first transparent insulating layer on the support substrate, and a light-shielding metal layer having at least a pixel opening region on the first transparent insulating layer; A second transparent insulating layer on the light-shielding metal layer, a first single crystal semiconductor layer on the second transparent insulating layer or a single crystal semiconductor layer to which strain is applied, and the first single crystal semiconductor layer Alternatively, a driving substrate having a second single crystal semiconductor layer or a strained single crystal semiconductor layer in which a display element portion is formed in a display region on a strain applied single crystal semiconductor layer and a peripheral circuit portion is formed in a peripheral circuit region;
An electro-optic display panel comprising a counter substrate facing the drive substrate with a liquid crystal interposed therebetween is an electro-optic display device attached to a resin frame having a metal film formed on a surface thereof by a high thermal conductive mold resin,
The light incident side of the outer side is formed with a white reflective film, and the outermost surface of the inner side is attached with a counter substrate on the inner side of the frame on which the black metal film is formed. An electro-optic display device comprising a body, a driving substrate, and a counter substrate which are filled and fixed.
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| US10634942B2 (en) | 2017-04-26 | 2020-04-28 | Seiko Epson Corporation | Electro-optical device and electronic device having base member, lens member and first and second insulators |
| JP2019028207A (en) * | 2017-07-28 | 2019-02-21 | セイコーエプソン株式会社 | Electro-optic device, electronic apparatus and method for manufacturing electro-optic device |
| JP2021047311A (en) * | 2019-09-19 | 2021-03-25 | セイコーエプソン株式会社 | Electro-optic device and electronic apparatus |
| JP7327031B2 (en) | 2019-09-19 | 2023-08-16 | セイコーエプソン株式会社 | electro-optical devices and electronics |
| CN113540118A (en) * | 2020-03-30 | 2021-10-22 | 元太科技工业股份有限公司 | Display device |
| WO2021256190A1 (en) * | 2020-06-18 | 2021-12-23 | 日亜化学工業株式会社 | Method for manufacturing image display device and image display device |
| CN112015298A (en) * | 2020-08-27 | 2020-12-01 | 京东方科技集团股份有限公司 | Integrated touch display panel and manufacturing method thereof |
| CN112015298B (en) * | 2020-08-27 | 2024-04-12 | 京东方科技集团股份有限公司 | Integrated touch display panel and manufacturing method thereof |
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