JP5470894B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal device and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  As this type of electro-optical device, for example, there is a liquid crystal device in which a liquid crystal layer is sandwiched between a pair of substrates. In such a liquid crystal device, an alignment film subjected to a rubbing treatment for aligning liquid crystal molecules when no voltage is applied is provided on the surfaces of the pair of substrates that are in contact with the liquid crystal layer.

  The rubbing treatment is performed, for example, by rubbing the surface of the alignment film disposed on the substrate with a rubbing roller having a rubbing cloth on the surface. At this time, if there is a step on the substrate, there is a high possibility that unintended streaks or shavings will occur in the alignment film. For this reason, the insulating film laminated | stacked on the surface vicinity of a board | substrate is planarized by CMP (Chemical Mechanical Polishing) process etc. (for example, refer patent document 1).

JP 2004-354966 A

  However, in the parts such as external circuit connection terminals for connecting the electro-optical device to other circuit boards, etc., for example, the conductive layer below the insulating film is exposed, so that the insulating film is flattened. Even if the treatment is performed, a relatively large step is generated on the substrate surface. That is, the above-described technique has a technical problem that the rubbing process may not be performed properly. In addition, even if the level difference on the substrate surface can be reduced by performing the planarization process, there is a technical problem that the manufacturing process becomes complicated because the accuracy for the planarization process is required.

  The present invention has been made in view of the above-described problems, for example, and provides an electro-optical device and an electronic apparatus capable of displaying a high-quality image by performing a suitable rubbing process. To do.

  In order to solve the above problems, an electro-optical device of the present invention includes a substrate, a pixel portion provided in a pixel region on the substrate, a transparent conductive film provided in the pixel portion, and an upper layer of the transparent conductive film. A storage capacitor comprising a formed dielectric film and a transparent pixel electrode formed on an upper layer of the dielectric film, and a peripheral region located around the pixel region on the substrate; A conductive film and a first conductive film made of the same film as the pixel electrode are provided with connection terminals stacked so as to be electrically connected to each other.

  According to the electro-optical device of the invention, during the operation, for example, scanning signals are supplied from a plurality of scanning lines to a plurality of pixel portions provided in a pixel region on the substrate, and from a plurality of data lines. An image signal is supplied. Accordingly, each pixel unit is controlled, and various images can be displayed in the pixel region. More specifically, by controlling a plurality of pixel units, a voltage corresponding to an image signal is applied to an electro-optical material such as a liquid crystal sandwiched between a substrate and a counter substrate facing the substrate, The color tone displayed in each pixel is controlled.

In order to solve the above problems, an electro-optical device of the present invention includes a pixel portion provided in a pixel region, a transparent capacitive electrode provided in the pixel portion, and a capacitive film provided on the capacitive electrode. A storage capacitor having a transparent pixel electrode, a first transparent conductive film formed in the same layer as the capacitor electrode electrically connected to each other outside the pixel region, and formed in the same layer as the pixel electrode. It is to have a second transparent conductive film, perforated connection terminal to which a signal for display is supplied, the first transparent conductive film and the second transparent conductive film, respectively and a transparent conductive film formed in the same layer And a dummy terminal to which the signal is not supplied .

  In the electro-optical device according to the aspect of the invention, the plurality of pixel portions include a transparent conductive film, a dielectric film formed on the transparent conductive film, and a transparent pixel electrode formed on the dielectric film. Is made up of. The transparent conductive film, dielectric film and pixel electrode described above constitute a storage capacitor.

  Specifically, the transparent conductive film is made of a transparent conductive material such as ITO (Indium Tin Oxide), for example, and extends to an opening region that transmits light in the pixel region (that is, a region that contributes to display). Is provided.

  The dielectric film is a transparent film provided between the transparent conductive film and the pixel electrode, and is desirably formed thinly using a material having a high dielectric constant in order to increase the capacitance value of the storage capacitor. .

  Similar to the transparent conductive film, the pixel electrode is made of a transparent conductive material such as ITO, and is provided so as to extend to the opening region. The pixel electrode is typically located on the outermost surface of the laminated structure on the substrate, and is provided so as to face the electro-optical material via the alignment film.

  An image signal for displaying an image is supplied from, for example, an external circuit board or the like via a circuit connection terminal provided in a peripheral region on the board. Note that the connection terminal is typically electrically connected to an external circuit board via a flexible board.

  In the electro-optical device according to the present invention, the connection terminal is laminated so that the transparent conductive film constituting the plurality of pixel portions and the first conductive film made of the same film as the pixel electrode are electrically connected to each other. It consists of Here, the “same film” means a film formed by the same film forming process, and does not mean that the pixel electrode and the first conductive layer are completely the same film. Means a film formed by simultaneously patterning the same conductive film. That is, the pixel electrode and the first conductive layer do not have to be electrically connected to each other, and various conditions such as thickness may be different.

  Particularly in the present invention, the connection terminal includes two transparent conductive layers (that is, a transparent conductive film and a first conductive layer). Therefore, for example, a step on the surface of the stacked structure can be reduced as compared with a case where the connection terminal is formed of one conductive layer. Specifically, the undulation of the surface is made gentle by laminating more layers.

  After the laminated structure as described above is formed on the substrate, an alignment film for aligning the alignment direction of the electro-optic material is disposed and subjected to a rubbing process. At this time, if there is a level difference on the substrate, there is a high possibility that unintended streaks or shavings will occur in the alignment film.

  However, in the present invention, since the connection terminal includes two transparent conductive layers, the step on the surface is reduced. Therefore, various inconveniences in the rubbing process described above can be avoided. In the present invention, the plurality of pixel portions are also configured to include two transparent conductive layers (that is, a transparent conductive film and a pixel electrode). For this reason, the structure of the connection terminal described above can be easily realized by extending the transparent conductive layer constituting the plurality of pixel portions in the pixel region to the peripheral region.

  As described above, according to the electro-optical device of the present invention, it is possible to suitably perform the rubbing process. Accordingly, display defects such as stripes can be prevented, so that a high-quality image can be displayed.

  In one aspect of the electro-optical device of the present invention, the dielectric film is provided up to the peripheral region, and has a plurality of first openings corresponding to the connection terminals, and the transparent conductive film The first conductive film is electrically connected to each other through the first opening.

  According to this aspect, it is provided not only in the pixel region but also in the peripheral region. A plurality of first openings corresponding to each of the connection terminals are formed in the dielectric film. That is, when viewed in plan on the substrate, the portion overlapping with the connection terminal is partially removed.

  In this aspect, in particular, the transparent conductive film and the first conductive film are electrically connected to each other through a first opening provided in the dielectric film. If comprised in this way, a transparent conductive film and a 1st conductive film can be electrically connected reliably. Therefore, a laminated structure in the connection terminal can be easily formed.

  In another aspect of the electro-optical device of the present invention, the electro-optical device is provided on the lower layer side of the transparent conductive film, and is provided on the first interlayer insulating film subjected to planarization and on the upper layer of the first interlayer insulating film. The pixel electrode is electrically connected to the data line, and the connection terminal is electrically connected to a second conductive film made of the same film as the data line.

  According to this aspect, the first interlayer insulating film subjected to the planarization process is provided on the lower layer side (that is, the side closer to the substrate) of the transparent conductive film. Further, a data line for supplying an image signal is provided above the first interlayer insulating film. The data line is typically formed of a light-shielding conductive layer (for example, aluminum) and is provided in a non-opening region that does not transmit light in the pixel region.

  In this aspect, each of the pixel electrodes in the plurality of pixel portions is electrically connected to the data line through, for example, a contact hole. For this reason, it is possible to reliably supply an image signal to the pixel electrode. Similarly, the connection terminal is electrically connected to the second conductive film made of the same film as the data line. For this reason, various signals input from the connection terminal can be reliably transmitted to the peripheral circuits such as the data line driving circuit and the scanning line driving circuit via the second conductive film.

  Furthermore, in this embodiment, since the first interlayer insulating film is subjected to the planarization process, the step generated on the substrate surface can be made extremely small. Therefore, it is possible to perform the rubbing process more suitably.

  In the aspect including the first interlayer insulating film and the data line described above, the peripheral region is provided so as to include the transparent conductive film and the first conductive film, and is not electrically connected to the second conductive film. You may comprise so that a dummy terminal may be further provided.

  In this case, a dummy terminal including a transparent conductive film and a first conductive film is provided in the peripheral region. The dummy terminal has a configuration substantially similar to that of the connection terminal, but is not electrically connected to the second conductive film. Therefore, signal input / output by the dummy terminal is not performed.

  As described above, since the dummy terminal is not electrically connected to the second conductive film, the configuration of the dummy terminal is partially different from that of the connection terminal. Specifically, the dummy terminal may be configured not to have a part of layers and contact holes that the connection terminal has. For this reason, if no measures are taken, there may be a step between the surface of the connection terminal and the surface of the dummy terminal.

  However, according to the above-described configuration, since the dummy terminal is configured to include the transparent conductive film and the first conductive film, a step generated between the connection terminal and the dummy terminal can be reduced. Therefore, the substrate surface can be made gentler. Therefore, it is possible to perform the rubbing process more suitably.

  Alternatively, in an aspect including the first interlayer insulating film and the data line, the semiconductor device further includes a second interlayer insulating film provided between the transparent conductive film and the data line, and the connection terminal includes the transparent conductive film and the first conductive film. However, it may be configured to be electrically connected to the second conductive film by being provided along the second opening portion opened in the second interlayer insulating film.

  In this case, a second interlayer insulating film is provided between the transparent conductive film and the data line. That is, the second interlayer insulating film is provided between the transparent conductive film and the second conductive film made of the same film as the data line. A second opening is formed in the second interlayer insulating film so as to correspond to each of the connection terminals. That is, when viewed in plan on the substrate, the portion overlapping with the connection terminal is partially removed.

  If comprised in this way, a transparent conductive film and a 1st conductive film will be electrically connected with a 2nd conductive film by providing along the 2nd opening part mentioned above. Specifically, the transparent conductive film and the first conductive film provided in the upper layer of the second interlayer insulating film are provided so as to extend to the second conductive film through the second opening, The connection terminal and the second conductive film are electrically connected to each other. According to the configuration described above, the connection terminal and the second conductive film can be easily and reliably electrically connected.

  Alternatively, in an aspect including the first interlayer insulating film and the data line, a semiconductor layer provided on a lower layer side of the first interlayer insulating film, and a third conductive material having a light shielding property provided between the semiconductor layer and the data line. You may comprise so that a film | membrane may be further provided.

  In this case, on the lower layer side of the first interlayer insulating film, for example, a semiconductor layer that forms part of a transistor that performs switching control in a plurality of pixel portions is provided. In addition, a third conductive film having a light shielding property including, for example, aluminum is provided between the semiconductor layer and the data line.

  According to such a configuration, light that is about to enter the semiconductor layer from the upper layer side is shielded by the third conductive film. Accordingly, it is possible to prevent leakage current from being generated due to light entering the semiconductor layer. Therefore, it is possible to reduce the malfunction of the apparatus due to the leakage current. Further, if the third conductive film is provided so as to extend to the peripheral region, it is possible to improve the light shielding ability also in the peripheral region.

  Further, when the semiconductor layer and the third conductive film are provided, a light shielding film provided on the lower layer side of the semiconductor layer may be further provided.

  According to this structure, since the light shielding film is provided on the lower layer side of the semiconductor layer, it is possible to shield light that is about to enter the semiconductor layer from the substrate side. Therefore, it is possible to effectively prevent a leak current from being generated due to light entering the semiconductor layer. Therefore, it is possible to reduce the malfunction of the apparatus due to the leakage current. Further, if the first light shielding film is provided so as to extend to the peripheral region, it is possible to improve the light shielding ability for the peripheral region.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the electro-optical device according to the present invention described above is included, a projection display device, a television set, a mobile phone, an electronic notebook, a word processor capable of performing high-quality display. Various electronic devices such as a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  The effect | action and other gain of this invention are clarified from the form for implementing invention demonstrated below.

1 is a plan view illustrating an overall configuration of an electro-optical device according to an embodiment. It is the HH 'sectional view taken on the line of FIG. FIG. 6 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms an image display region of the electro-optical device according to the embodiment. FIG. 3 is a plan view schematically showing the positional relationship between electrodes and wirings in an image display area of the electro-optical device according to the embodiment. It is the top view which showed the structure of a part of image display area in detail (the 1). It is the top view (the 2) which showed the structure of a part of image display area in detail. It is the sectional view on the AA 'line in each of Drawing 4-Drawing 6. It is. It is a top view which shows the structure of an external circuit connection terminal and a dummy terminal. It is a top view which shows the specific structure of an external circuit connection terminal. FIG. 10 is a sectional view taken along line BB ′ of FIG. 9. It is a top view which shows the specific structure of a dummy terminal. It is BB 'sectional view taken on the line of FIG. It is a top view which shows the structure of the projector which is an example of the electronic device to which the electro-optical apparatus is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Electro-optical device>
The electro-optical device according to this embodiment will be described with reference to FIGS. In the following embodiments, a TFT (Thin Film Transistor) active matrix driving type liquid crystal device with a built-in driving circuit, which is an example of the electro-optical device of the present invention, is taken as an example.

  First, the overall configuration of the electro-optical device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the overall configuration of the electro-optical device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the electro-optical device according to the present embodiment, a TFT array substrate 10 and a counter substrate 20 are disposed to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between a pair of alignment films.

  The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a in which the plurality of pixel electrodes 9 are provided. The image display area here is an example of the “pixel area” in the present invention.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass beads for dispersing the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value is dispersed. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  In the peripheral region, the data line driving circuit 101 and the external circuit connection terminal 102 as an example of the “connection terminal” of the present invention are disposed in the TFT array substrate 10 in a region located outside the seal region where the seal material 52 is disposed. It is provided along one side. Here, for convenience of explanation, illustration of dummy terminals described later is omitted. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display region 10 a in this way, a plurality of the pixel lines are covered along the remaining side of the TFT array substrate 10 and covered with the frame light shielding film 53. Wiring 105 is provided.

  In regions facing the four corners of the counter substrate 20 on the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are disposed. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. Although the detailed structure of this laminated structure is not shown in FIG. 2, pixel electrodes 9 made of a transparent material such as ITO are formed in an island shape in a predetermined pattern on each of the laminated structures. Has been. The laminated structure on the TFT array substrate 10 will be described in detail later.

  The pixel electrode 9 is formed in the image display area 10 a on the TFT array substrate 10 so as to face the counter electrode 21. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9, an alignment film 16 is formed so as to cover the pixel electrode 9.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9. Further, in order to perform color display in the image display area 10a, a color filter (not shown in FIG. 2) may be formed on the light shielding film 23 in an area including a part of the opening area and the non-opening area. Good. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the above-described drive circuits such as the data line drive circuit 101 and the scanning line drive circuit 104, the image signal on the image signal line is sampled on the TFT array substrate 10 shown in FIGS. Sampling circuit that supplies lines, precharge circuit that supplies pre-charge signals of a predetermined voltage level to multiple data lines in advance of image signals, inspection of quality, defects, etc. of the electro-optical device during production or shipment An inspection circuit or the like may be formed.

  Next, an electrical configuration of the pixel portion of the electro-optical device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the electro-optical device according to this embodiment.

  In FIG. 3, a pixel electrode 9 and a TFT 30 are respectively formed in each of a plurality of pixel portions formed in a matrix form constituting the image display region 10a. The TFT 30 is electrically connected to the pixel electrode 9, and performs switching control of the pixel electrode 9 during operation of the electro-optical device according to the present embodiment. The data line 6 to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6 may be supplied in this order, or may be supplied for each of a plurality of adjacent data lines 6. .

  The scanning line 11 is electrically connected to the gate of the TFT 30, and the electro-optical device according to the present embodiment pulses the scanning signals G 1, G 2,. Gm is applied in this order in a line sequential manner. The pixel electrode 9 is electrically connected to the drain of the TFT 30, and the image signal S1, S2,... Supplied from the data line 6 is closed by closing the switch of the TFT 30 serving as a switching element for a certain period. Sn is written at a predetermined timing. A predetermined level of image signals S1, S2,..., Sn written in a liquid crystal as an example of an electro-optic material via the pixel electrode 9 is held for a certain period with the counter electrode formed on the counter substrate. The

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. For example, in the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel. In the normally black mode, the transmittance is applied in units of each pixel. As a result, the transmittance for incident light is increased, and light having a contrast corresponding to an image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode 21 (see FIG. 2). The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9 in response to supply of an image signal. The configuration of the storage capacitor 70 will be described in detail later.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIGS. FIG. 4 is a plan view schematically showing the positional relationship between electrodes and wirings arranged for performing an electro-optical operation in the image display area of the electro-optical device according to the present embodiment. 5 and 6 are plan views showing in detail the configuration of a part of the image display area. 5 and 6 respectively show different layers on the TFT array substrate 10 by solid lines, and show a planar structure in a slightly wider region than FIG. FIG. 7 is a cross-sectional view taken along line AA ′ in each of FIGS. 4 to 6. In FIGS. 4 to 7, the scales of the respective layers and members are made different in order to make each layer and each member recognizable on the drawing.

  In FIG. 4, on the TFT array substrate 10, scanning lines 11 and data lines 6 extend along the X direction and the Y direction, respectively. In the vicinity of the intersection of the data line 6 and the scanning line 11, the TFT 30 (that is, the semiconductor layer 30 a and the gate electrode 30 b) is formed so as to overlap the scanning line 11.

  The scanning line 11 includes, for example, a simple metal, an alloy, and a metal silicide containing a refractory metal such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), Mo (molybdenum), and Pd (palladium). , Polysilicide, or a light shielding material such as a laminate of these. The scanning line 11 is formed wider than the semiconductor layer 30 a of the TFT 30. Here, as will be described later, since the scanning line 11 is arranged on the lower layer side than the semiconductor layer 30 a, the TFT array substrate 10 is formed by forming the scanning line 11 wider than the semiconductor layer 30 a of the TFT 30 in this way. The channel region 30b of the TFT 30 can be shielded almost or completely from the return light such as the back surface reflection in the light source, the light emitted from other electro-optical devices by a double plate projector or the like and penetrating the composite optical system. As a result, the light leakage current in the TFT 30 is reduced during the operation of the electro-optical device, the contrast ratio can be improved, and high-quality image display is possible. That is, the scanning line 11 is an example of the “light-shielding film” in the present invention.

  Since the scanning line 11 has a light shielding property, it defines a non-opening area in the image display area 10 a together with the data line 6. However, each of the scanning line 11 and the data line 6 does not have to define the non-opening region by the respective edges of the scanning line 11 and the data line 6. In other words, each of the scanning lines 11 and the data lines 6 may be formed in a non-opening region defined by another light-shielding film or the like formed on the TFT array substrate 10.

  The TFT 30 includes a semiconductor layer 30a and a gate electrode 30b. The semiconductor layer 30a is formed including a source region 30a1, a channel region 30a2, and a drain region 30a3. Here, an LDD (Lightly Doped Drain) region may be formed at the interface between the channel region 30a2 and the source region 30a1, or between the channel region 30a2 and the drain region 30a3. That is, the TFT 30 may have an LDD structure.

  The gate electrode 30b is formed through a gate insulating film in a region overlapping the channel region of the semiconductor layer 30a when viewed in plan on the TFT array substrate 10. The gate electrode 30b is electrically connected to the scanning line 11 disposed on the lower layer side via the contact hole 34, and the TFT 30 is on / off controlled by applying a scanning signal.

  The data line 6 is made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer. Since the data line 6 overlaps the TFT 30 on the TFT 30, the TFT 30 can be shielded from the upper side.

  In FIG. 5, the capacitor electrode 71 which is an example of the “transparent conductive film” of the present invention is made of a transparent conductive material such as ITO, and forms a pair of capacitor electrodes in the storage capacitor 70 together with the pixel electrode 9. doing. The capacitive electrode 71 overlaps substantially the entire image display area 10a, and extends to the upper layer side of the data line 6 in the opening area through which light can pass.

  The capacitor electrode 71 is formed on the lower layer side than the pixel electrode 9 (not shown in FIG. 5), and has an opening 5a for each pixel. Inside the opening 5a, a contact hole 33 for electrically connecting the pixel electrode 9 and the drain region 30a3 (see FIG. 7) is formed in the vertical direction in the drawing, that is, in the thickness direction of the TFT array substrate 10. Has been. Therefore, according to the contact hole 33, the image signal potential output from the drain region 30a3 can be supplied to the pixel electrode 9 without being electrically short-circuited to the capacitor electrode 71 formed on the lower layer side of the pixel electrode 9. . As a result, since the pixel electrode 9 can be driven on / off while providing the capacitor electrode 71 on the lower layer side of the pixel electrode 9, an electro-optical device having an extremely efficient wiring layout can be realized.

  In FIG. 6, the pixel electrode 9 is formed in an island shape for each pixel. In the present embodiment, each pixel is divided into a matrix by the data lines 6 and the scanning lines 11. As shown by the dotted line 9 b in FIG. 4, the pixel electrode 9 is part of the data line 6 and the scanning line 11 when the end of the pixel electrode 9 is viewed on the TFT array substrate 10 in each pixel. Are formed so as to overlap each other. The storage capacitor 70 is formed in a region where the capacitor electrode 71 and the pixel electrode 9 overlap each other.

  In FIG. 7, each conductive layer described above is laminated together with interlayer insulating films 12, 13, 14, 15 and 17 and a dielectric film 72 as shown in the figure.

  Specifically, first, the scanning line 11 is laminated on the TFT array substrate 10, and the interlayer insulating film 12 is laminated thereon. In addition to the function of insulating the scanning lines 11 and the TFTs 30 from each other, the interlayer insulating film 12 is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened during polishing or remains after cleaning. For example, the pixel switching TFT 30 has a function of preventing deterioration of characteristics.

  A semiconductor layer 30 a and a gate electrode 30 b are stacked on the interlayer insulating film 12 so as to face each other with the interlayer insulating film 13 therebetween. That is, the interlayer insulating film 13 functions as a gate insulating film in the TFT 30.

  In the upper layer of the interlayer insulating film 12, an interlayer insulating film 14, a relay layer 7, an interlayer insulating film 17, a data line 6, and an interlayer insulating film 15 are stacked in that order from the lower layer side. The data line 6 is electrically connected to the source region 30 a 1 of the TFT 30 through the contact hole 34, the relay layer 7 and the contact hole 31. On the other hand, the drain region 30a3 of the TFT 30 is electrically connected to the pixel electrode 9 through the contact hole 32, the relay layer 7, and the contact holes 33, 35, and 36. In addition to the function of electrically connecting the data line 6 and the TFT 30, the relay layer 7 also has a function of blocking light that is about to enter the TFT 30 from the upper layer side.

  A capacitor electrode 71, a dielectric film 72, and a pixel electrode 9 are sequentially stacked on the interlayer insulating film 15 to constitute a storage capacitor 70. The dielectric film 72 is a transparent film formed on the capacitor electrode 71 in the opening region where light can be transmitted. Since each storage capacitor 70 is composed of a transparent capacitor electrode 71, dielectric film 72, and pixel electrode 9, the aperture ratio, which is the ratio of the pixel to the opening area, is reduced without narrowing the opening area. I will not let you. In addition, according to such a storage capacitor 70, a capacitor can be formed in an opening region which is a very large region compared to the non-opening region, and therefore, compared with the case where the storage capacitor is formed only in the non-opening region. Thus, the capacitance value can be effectively increased.

  Although illustration is omitted here, an alignment film 16 (see FIG. 2) subjected to rubbing treatment is provided on the upper surface of the pixel electrode 9. The configuration of the pixel portion described above is common to each pixel portion as shown in FIG. Such pixel portions are periodically formed in the image display area 10a (see FIG. 1).

  Next, the configuration of the external circuit connection terminal 102 formed in the peripheral region will be described in detail with reference to FIGS. FIG. 8 is a plan view showing the configuration of the external circuit connection terminals and the dummy terminals. 9 is a plan view showing a specific configuration of the external circuit connection terminal, and FIG. 10 is a cross-sectional view taken along the line BB ′ of FIG. Further, FIG. 11 is a plan view showing a specific configuration of the dummy terminal, and FIG. 12 is a cross-sectional view taken along the line BB ′ of FIG. 9 to 12, for convenience of explanation, only necessary ones of the layers shown in FIG. 7 are shown, and the other layers are omitted.

  In FIG. 8, the external circuit connection terminal 102 is electrically connected to peripheral circuits such as the data line driving circuit 101 and the scanning line driving circuit 104 via the wiring 200. In the electro-optical device according to the present embodiment, a dummy terminal 102 d configured to simulate the external circuit connection terminal 102 is provided. Unlike the external circuit connection terminal 102, the dummy terminal 102 d is not electrically connected to the peripheral circuit via the wiring 200. For this reason, the dummy terminal 102d does not input / output various signals during the operation of the electro-optical device.

  The dummy terminal 102d is electrically connected to an inspection wiring (not shown), for example, during the manufacturing process, and is used to input / output an inspection signal. The inspection wiring is typically cut after the inspection is completed. For this reason, in the electro-optical device as a product, the inspection wiring is not electrically connected to the dummy terminal 102d.

  9 and 10, the external circuit connection terminal 102 includes a semiconductor layer 30c, a relay layer 7a, a first relay layer 7a, a second relay layer 6a, a first transparent conductive film 71a, and a second transparent conductive material. It is formed by laminating the film 9a.

  The semiconductor layer 30 c is made of the same film as the layer constituting the TFT 30 in the pixel portion, and is electrically connected to the first relay layer 7 a through the contact hole 81.

  The first relay layer 7a is stacked above the semiconductor layer 30c with the interlayer insulating film 14 interposed therebetween. The first relay layer 7a is made of the same film as the relay layer 7 in the pixel portion. The first relay layer 7a is an example of the “third conductive film” in the present invention.

  The second relay layer is laminated on the first relay layer 7a with an insulating film 17 interposed therebetween. The second relay layer 6a is formed of the same film as the data line 6 in the pixel portion, and is electrically connected to the first relay layer 7a through the contact hole 82. As shown in FIG. 9, a plurality of contact holes 82 are provided so as to surround the outer periphery of the terminal portion. Further, the interlayer insulating film 17 is subjected to a planarization process after the film formation. Here, the second relay layer 6a is an example of the “second conductive layer” in the present invention, and the interlayer insulating film 17 is an example of the “first interlayer insulating film” in the present invention.

  A first transparent conductive film 71a is provided on the second relay layer 6a with an interlayer insulating film 15 interposed therebetween. The first transparent conductive film 71 a is made of the same film as the capacitor electrode 71 in the pixel portion, and is electrically connected to the second relay layer 6 a through the contact hole 83. The interlayer insulating film 15 here is an example of the “second interlayer insulating film” in the present invention, and the contact hole 83 is an example of the “second opening” in the present invention.

  On the upper layer of the first transparent conductive film 71a, a second transparent conductive film 9a is provided via a dielectric film 72a. The second transparent conductive film 9 a is made of the same film as the pixel electrode 9 in the pixel portion, and is electrically connected to the first transparent conductive film 71 a through the contact hole 84. Here, the second transparent conductive film 9a is an example of the “first conductive film” in the present invention, and the contact hole 84 is an example of the “first opening” in the present invention.

  As described above, in the electro-optical device according to the present embodiment, the external circuit connection terminal 102 includes two transparent conductive layers (that is, the first transparent conductive film 71a and the second transparent conductive film 9a). Yes. Therefore, for example, the step on the surface of the TFT array substrate 10 can be reduced as compared with the case where the external circuit connection terminal 102 is formed of one conductive layer. Specifically, the undulation of the surface is made gentle by laminating more layers.

  After the laminated structure as described above is formed on the TFT array substrate 10, an alignment film 16 (see FIG. 2) for aligning the alignment direction of the liquid crystal layer 50 is disposed and subjected to a rubbing process. At this time, if a step is generated on the TFT array substrate 10, there is a high possibility that unintended streaks or shavings are generated in the alignment film 16.

  On the other hand, in the electro-optical device according to this embodiment, the external circuit connection terminal 102 includes two transparent conductive layers, so that the step on the surface is reduced. Therefore, various inconveniences in the rubbing process described above can be avoided.

  In the electro-optical device according to this embodiment, as described above, each pixel unit is also configured to include two transparent conductive layers (that is, the capacitor electrode 71 and the pixel electrode 9). Therefore, the configuration of the external circuit connection terminal 102 described above can be easily realized by extending the transparent conductive layer constituting the pixel portion in the image display area 10a to the peripheral area.

  In FIG. 11 and FIG. 12, the dummy terminal 102d is similar to the external circuit connection terminal 102 in that the semiconductor layer 30c, the relay layer 7a, the first relay layer 7a, the second relay layer 6a, and the first transparent conductive film. It is formed by laminating 71a and the second transparent conductive film 9a. However, in the dummy terminal 102d, like the external circuit connection terminal 102, the contact hole 81 that electrically connects the semiconductor layer 30c and the first relay layer 7a, and the first relay layer 7a and the second relay layer 6a are provided. A contact hole 82 for electrical connection is not formed.

  As described above, the dummy terminal 102d is not electrically connected to the first relay layer 7a and the semiconductor layer 30c at the terminal portion (that is, the second transparent conductive film 9a) located on the surface of the TFT array substrate 10. The difference may be a difference in the undulation of the laminated structure, and a step may be generated between the external circuit connection terminals 102.

  On the other hand, in the electro-optical device according to the present embodiment, the dummy terminal 102d is configured to include the first transparent conductive film 71a and the second transparent conductive film 9a, and thus the external circuit connection terminal 102 and the dummy terminal 102d. Can be reduced. Therefore, the surface of the TFT array substrate 10 can be made gentler. Therefore, it is possible to perform the rubbing process more suitably.

  Here, the difference between the external circuit connection terminal 102 and the dummy terminal 102d has been described as the presence / absence of the contact holes 81 and 82. However, for example, some layers in the external circuit connection terminal 102 may be included in the dummy terminal 102d. Even if it is not provided, the above-described effects can be obtained in the same manner.

  As described above, according to the electro-optical device according to the present embodiment, the step on the TFT array substrate 10 can be reduced, so that the rubbing process can be suitably performed. Accordingly, display defects such as stripes can be prevented, so that a high-quality image can be displayed.

<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 13 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 13, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R and 1110B.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 13, a mobile personal computer, a mobile phone, an LCD TV, a viewfinder type, a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic device Examples include notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices with touch panels. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention includes a reflective liquid crystal device (LCOS), a plasma display (PDP), a field emission display (FED, SED), an organic EL display, and a digital micromirror device. (DMD), electrophoresis apparatus and the like are also applicable.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change. In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

  6 ... data line, 6a ... second relay layer, 7 ... relay layer, 7a ... first relay layer, 9 ... pixel electrode, 9a ... second transparent conductive film, 10 ... TFT array substrate, 10a ... image display area, 11 Scan lines 12, 13, 14, 15, 17 ... Interlayer insulating film, 20 ... Counter substrate, 30 ... TFT, 30a, 30c ... Semiconductor layer, 30b ... Gate electrode, 50 ... Liquid crystal layer, 70 ... Storage capacitor, 71 ... Capacitance electrode, 71a ... First transparent conductive film, 72a ... Dielectric film, 81, 82, 83, 84 ... Contact hole, 101 ... Data line driving circuit, 102 ... External circuit connection terminal, 102d ... Dummy terminal, 104 ... Scan line drive circuit

Claims (8)

A pixel portion provided in the pixel region;
A storage capacitor having a transparent capacitive electrode provided in the pixel portion and a transparent pixel electrode provided on the capacitive electrode via a dielectric film;
The outside of the pixel region, have a second transparent conductive film formed on the first transparent conductive film and the pixel electrode in the same layer formed on the capacitor electrode and the same layer which are electrically connected to each other, the display A connection terminal to which a signal is supplied ,
The first have a transparent conductive film and the second transparent conductive film, respectively and a transparent conductive film formed in the same layer, the electro-optical device, characterized in that it comprises a dummy terminal to which the signal is not supplied. The dielectric film has a first opening provided corresponding to the connection terminal,
The electro-optical device according to claim 1, wherein the first transparent conductive film and the second transparent conductive film are electrically connected to each other through the first opening. A first interlayer insulating film provided on a lower layer side of the capacitive electrode and subjected to planarization;
A data line provided on an upper layer of the first interlayer insulating film,
The pixel electrode is provided corresponding to a switching element, and the switching element is electrically connected to the data line,
The electro-optical device according to claim 1, wherein the connection terminal is electrically connected to a conductive film formed in the same layer as the data line.   The electro-optical device according to claim 3, wherein the dummy terminal is not electrically connected to the conductive film. A second interlayer insulating film provided between the capacitor electrode and the data line;
The connection terminal is electrically connected to the conductive film by providing the first transparent conductive film and the second transparent conductive film along a second opening opened in the second interlayer insulating film. The electro-optical device according to claim 3, wherein the electro-optical device is connected. A semiconductor layer of the switching element provided on a lower layer side of the first interlayer insulating film;
The electro-optical device according to claim 3, further comprising: a light-shielding conductive film provided between the semiconductor layer and the data line.   The electro-optical device according to claim 6, further comprising a light shielding film provided on a lower layer side of the semiconductor layer.   An electronic apparatus comprising the electro-optical device according to claim 1.

Images