JP2004165490A5 - - Google Patents

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Publication number
JP2004165490A5
JP2004165490A5 JP2002330922A JP2002330922A JP2004165490A5 JP 2004165490 A5 JP2004165490 A5 JP 2004165490A5 JP 2002330922 A JP2002330922 A JP 2002330922A JP 2002330922 A JP2002330922 A JP 2002330922A JP 2004165490 A5 JP2004165490 A5 JP 2004165490A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002330922A
Other versions
JP4632625B2 (ja
JP2004165490A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002330922A priority Critical patent/JP4632625B2/ja
Priority claimed from JP2002330922A external-priority patent/JP4632625B2/ja
Priority to US10/441,088 priority patent/US6868005B2/en
Priority to CNB031331300A priority patent/CN100361229C/zh
Publication of JP2004165490A publication Critical patent/JP2004165490A/ja
Priority to US11/060,305 priority patent/US6996002B2/en
Publication of JP2004165490A5 publication Critical patent/JP2004165490A5/ja
Application granted granted Critical
Publication of JP4632625B2 publication Critical patent/JP4632625B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002330922A 2002-11-14 2002-11-14 薄膜磁性体記憶装置 Expired - Fee Related JP4632625B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002330922A JP4632625B2 (ja) 2002-11-14 2002-11-14 薄膜磁性体記憶装置
US10/441,088 US6868005B2 (en) 2002-11-14 2003-05-20 Thin film magnetic memory device provided with magnetic tunnel junctions
CNB031331300A CN100361229C (zh) 2002-11-14 2003-07-21 有磁隧道结的薄膜磁性体存储装置
US11/060,305 US6996002B2 (en) 2002-11-14 2005-02-18 Thin film magnetic memory device provided with magnetic tunnel junctions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002330922A JP4632625B2 (ja) 2002-11-14 2002-11-14 薄膜磁性体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009247676A Division JP5106513B2 (ja) 2009-10-28 2009-10-28 薄膜磁性体記憶装置
JP2009247675A Division JP2010028134A (ja) 2009-10-28 2009-10-28 薄膜磁性体記憶装置

Publications (3)

Publication Number Publication Date
JP2004165490A JP2004165490A (ja) 2004-06-10
JP2004165490A5 true JP2004165490A5 (ja) 2005-12-02
JP4632625B2 JP4632625B2 (ja) 2011-02-16

Family

ID=32290111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002330922A Expired - Fee Related JP4632625B2 (ja) 2002-11-14 2002-11-14 薄膜磁性体記憶装置

Country Status (3)

Country Link
US (2) US6868005B2 (ja)
JP (1) JP4632625B2 (ja)
CN (1) CN100361229C (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221582B2 (en) * 2003-08-27 2007-05-22 Hewlett-Packard Development Company, L.P. Method and system for controlling write current in magnetic memory
US7067330B2 (en) * 2004-07-16 2006-06-27 Headway Technologies, Inc. Magnetic random access memory array with thin conduction electrical read and write lines
KR100975803B1 (ko) * 2004-07-16 2010-08-16 헤드웨이 테크놀로지스 인코포레이티드 Ｍｔｊ ｍｒａｍ 셀, ｍｔｊ ｍｒａｍ 셀들의 어레이, 및 ｍｔｊ ｍｒａｍ 셀을 형성하는 방법
JP4498088B2 (ja) 2004-10-07 2010-07-07 株式会社東芝 半導体記憶装置およびその製造方法
JP2007080344A (ja) * 2005-09-13 2007-03-29 Toshiba Corp 半導体記憶装置
JP2007129018A (ja) * 2005-11-02 2007-05-24 Nec Electronics Corp 半導体装置
JP4364226B2 (ja) * 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
US20080123448A1 (en) * 2006-11-07 2008-05-29 Marco Goetz Memory device architecture and method for high-speed bitline pre-charging
KR101334174B1 (ko) * 2007-01-12 2013-11-28 삼성전자주식회사 배선 구조체 및 상기 배선 구조체를 포함한 반도체 소자
JP2009134794A (ja) * 2007-11-29 2009-06-18 Renesas Technology Corp 半導体装置
US8130534B2 (en) * 2009-01-08 2012-03-06 Qualcomm Incorporated System and method to read and write data a magnetic tunnel junction element
CN110706727B (zh) * 2019-09-30 2021-09-10 湖南大学 磁性随机存取存储器及基于stt marm的可重构puf方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5572480A (en) * 1990-02-09 1996-11-05 Hitachi Ltd. Semiconductor integrated circuit device and process for fabricating the same
JPH03272168A (ja) * 1990-03-22 1991-12-03 Oki Electric Ind Co Ltd 半導体記憶装置
JP3936005B2 (ja) * 1996-09-18 2007-06-27 株式会社ルネサステクノロジ 半導体記憶装置
JP4056107B2 (ja) * 1997-06-20 2008-03-05 エルピーダメモリ株式会社 半導体集積回路
JP2002170377A (ja) * 2000-09-22 2002-06-14 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4712204B2 (ja) * 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
US20030117838A1 (en) 2001-12-26 2003-06-26 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device writing data with bidirectional data write current
US7020008B2 (en) 2001-12-26 2006-03-28 Renesas Technology Corp. Thin film magnetic memory device writing data with bidirectional current
JP4084084B2 (ja) * 2002-05-23 2008-04-30 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP2004103104A (ja) * 2002-09-09 2004-04-02 Renesas Technology Corp 薄膜磁性体記憶装置

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