JP2004128357A5 - - Google Patents

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Publication number
JP2004128357A5
JP2004128357A5 JP2002292868A JP2002292868A JP2004128357A5 JP 2004128357 A5 JP2004128357 A5 JP 2004128357A5 JP 2002292868 A JP2002292868 A JP 2002292868A JP 2002292868 A JP2002292868 A JP 2002292868A JP 2004128357 A5 JP2004128357 A5 JP 2004128357A5
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JP
Japan
Prior art keywords
electrode
substrate
metal nanoparticles
composite metal
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002292868A
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Japanese (ja)
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JP2004128357A (en
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Publication date
Application filed filed Critical
Priority to JP2002292868A priority Critical patent/JP2004128357A/en
Priority claimed from JP2002292868A external-priority patent/JP2004128357A/en
Priority to US10/484,454 priority patent/US20040245648A1/en
Priority to KR1020047000955A priority patent/KR20050040812A/en
Priority to CNB038009056A priority patent/CN100337782C/en
Priority to EP03788702A priority patent/EP1578559B1/en
Priority to PCT/JP2003/011797 priority patent/WO2004026526A1/en
Priority to DE60326760T priority patent/DE60326760D1/en
Priority to TW092125572A priority patent/TWI284581B/en
Publication of JP2004128357A publication Critical patent/JP2004128357A/en
Publication of JP2004128357A5 publication Critical patent/JP2004128357A5/ja
Pending legal-status Critical Current

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Claims (9)

多数の電極を有する基体であって、金属核の周囲を有機物で結合・被覆することによって生成した複合型金属ナノ粒子を主材とする接合材料によって、前記基体の電極を他の基体に設けた電極に接合するようにしたことを特徴とする電極配設基体。 A substrate having a plurality of electrodes, the bonding material mainly material a composite metal nanoparticles produced by bonding and covering the external surface of the gold Shokukaku in organic, provided with an electrode of the substrate to the other substrate An electrode-arranged substrate characterized in that it is bonded to an electrode. 前記金属核の平均直径は、１００ｎｍ以下で０．５ｎｍ以上であることを特徴とする請求項１記載の電極配設基体。The electrode-disposed substrate according to claim 1, wherein the average diameter of the metal core is 100 nm or less and 0.5 nm or more. 前記複合型金属ナノ粒子は、金属塩とアルコール系有機物とを混合して加熱合成した後、これに還元剤を加えて加熱還元することによって生成したものであることを特徴とする請求項１または２記載の電極配設基体。The composite metal nanoparticles, was heated synthesized by mixing a metal salt and alcohol-based organic matter, according to claim 1 or characterized in that produced by heating reduction a reducing agent was added to this 3. The electrode-arranged substrate according to 2. 前記複合型金属ナノ粒子は、金属塩と有機物質とを非水系溶媒中で加熱合成した後、これを加熱還元することによって生成したものであることを特徴とする請求項１または２記載の電極配設基体。 3. The electrode according to claim 1, wherein the composite metal nanoparticles are produced by heat-synthesizing a metal salt and an organic substance in a non-aqueous solvent and then reducing the heat. Arrangement base. 前記複合型金属ナノ粒子は、金属塩と金属酸化物と金属水酸化物と有機物とを混合して加熱合成した後、これを加熱還元することによって生成したものであることを特徴とする請求項１または２記載の電極配設基体。The composite metal nanoparticles are produced by mixing a metal salt, a metal oxide, a metal hydroxide, and an organic substance, heat-synthesized, and then heat-reducing the mixture. 3. The electrode-arranged substrate according to 1 or 2 . 前記複合型金属ナノ粒子は、金属塩と有機物とを非水系溶媒中で加熱合成した後、これに還元剤を加えて加熱還元することによって生成したものであることを特徴とする請求項１または２記載の電極配設基体。The composite metal nanoparticles, was heated combining the metal salt and an organic substance in a non-aqueous solvent, according to claim 1 or characterized in that produced by heating reduction a reducing agent was added to this 3. The electrode-arranged substrate according to 2. 前記複合型金属ナノ粒子の周囲を結合・被覆する有機物は、Ｃ，Ｈ及び／またはＯを主成分としたものであることを特徴とする請求項１乃至６のいずれかに記載の電極配設基体。The organic material for bonding and covering the external surface of the composite metal nanoparticles, the electrode arranged according to any one of claims 1 to 6, characterized in that is obtained by C, and H and / or O as main components Substrate. 前記基体は、半導体装置の装着のために用いるものであることを特徴とする請求項１乃至７のいずれかに記載の電極配設基体。The substrate is the electrode arrangement設基body according to any one of claims 1 to 7, characterized in that, which is used for mounting the semiconductor device. 基体に設けた電極と他の基体に設けた電極との間に、平均直径が１００ｎｍ程度以下の金属核の周囲を有機物で結合・被覆することによって生成した複合型金属ナノ粒子を主材とする接合材料を介在させ、前記接合材料に含まれる複合型金属ナノ粒子の形態を変化させて電極同士を接合することを特徴とする電極配設基体の電極接合方法。  Mainly composed of composite metal nanoparticles produced by bonding and coating the periphery of a metal core having an average diameter of about 100 nm or less with an organic substance between an electrode provided on a substrate and an electrode provided on another substrate. An electrode bonding method for an electrode-arranged substrate, wherein a bonding material is interposed and electrodes are bonded together by changing the form of the composite metal nanoparticles contained in the bonding material.
JP2002292868A 2002-09-18 2002-10-04 Electrode arranged substrate and its electrode connection method Pending JP2004128357A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (en) 2002-10-04 2002-10-04 Electrode arranged substrate and its electrode connection method
TW092125572A TWI284581B (en) 2002-09-18 2003-09-17 Bonding material and bonding method
EP03788702A EP1578559B1 (en) 2002-09-18 2003-09-17 Bonding method
KR1020047000955A KR20050040812A (en) 2002-09-18 2003-09-17 Bonding material and bonding method
CNB038009056A CN100337782C (en) 2002-09-18 2003-09-17 Joining material and joining method
US10/484,454 US20040245648A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
PCT/JP2003/011797 WO2004026526A1 (en) 2002-09-18 2003-09-17 Bonding material and bonding method
DE60326760T DE60326760D1 (en) 2002-09-18 2003-09-17 PROCESS FOR CONNECTING

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002292868A JP2004128357A (en) 2002-10-04 2002-10-04 Electrode arranged substrate and its electrode connection method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008002999A Division JP2008098683A (en) 2008-01-10 2008-01-10 Electrode connection method of electrode arrangement base

Publications (2)

Publication Number Publication Date
JP2004128357A JP2004128357A (en) 2004-04-22
JP2004128357A5 true JP2004128357A5 (en) 2005-08-25

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Family Applications (1)

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JP2002292868A Pending JP2004128357A (en) 2002-09-18 2002-10-04 Electrode arranged substrate and its electrode connection method

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JP (1) JP2004128357A (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4378239B2 (en) 2004-07-29 2009-12-02 株式会社日立製作所 A semiconductor device, a power conversion device using the semiconductor device, and a hybrid vehicle using the power conversion device.
JP4815800B2 (en) * 2004-12-28 2011-11-16 株式会社大真空 Piezoelectric vibration device
JP4635230B2 (en) * 2005-01-20 2011-02-23 日産自動車株式会社 Joining method and joining structure
JP2006202938A (en) 2005-01-20 2006-08-03 Kojiro Kobayashi Semiconductor device and its manufacturing method
JP2006211089A (en) * 2005-01-26 2006-08-10 Daishinku Corp Piezoelectric vibration device
US7615476B2 (en) * 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
JP5305148B2 (en) 2006-04-24 2013-10-02 株式会社村田製作所 Electronic component, electronic component device using the same, and manufacturing method thereof
JP4743002B2 (en) * 2006-06-13 2011-08-10 日産自動車株式会社 Joining method
JP4873160B2 (en) * 2007-02-08 2012-02-08 トヨタ自動車株式会社 Joining method
JP5006081B2 (en) * 2007-03-28 2012-08-22 株式会社日立製作所 Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof
WO2009098831A1 (en) * 2008-02-07 2009-08-13 Murata Manufacturing Co., Ltd. Method for manufacturing electronic component device
US10177079B2 (en) 2010-03-19 2019-01-08 Furukawa Electric Co., Ltd. Conductive connecting member and manufacturing method of same
JP5863323B2 (en) * 2011-08-11 2016-02-16 古河電気工業株式会社 Semiconductor device and manufacturing method of semiconductor device
JP6178850B2 (en) 2013-06-28 2017-08-09 古河電気工業株式会社 Connection structure and semiconductor device
JP6387048B2 (en) * 2016-06-09 2018-09-05 ローム株式会社 Manufacturing method of semiconductor device
KR101898647B1 (en) * 2017-05-11 2018-09-14 서울과학기술대학교 산학협력단 Bonding material of a Cu foil coated with Ag and bonding method using the Cu foil with coated Ag
JP6927490B2 (en) * 2017-05-31 2021-09-01 株式会社応用ナノ粒子研究所 Heat dissipation structure

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