JP2004099416A5 - - Google Patents

Download PDF

Info

Publication number
JP2004099416A5
JP2004099416A5 JP2002267600A JP2002267600A JP2004099416A5 JP 2004099416 A5 JP2004099416 A5 JP 2004099416A5 JP 2002267600 A JP2002267600 A JP 2002267600A JP 2002267600 A JP2002267600 A JP 2002267600A JP 2004099416 A5 JP2004099416 A5 JP 2004099416A5
Authority
JP
Japan
Prior art keywords
heater
shape
deformation
distribution
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002267600A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004099416A (ja
JP4161655B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002267600A external-priority patent/JP4161655B2/ja
Priority to JP2002267600A priority Critical patent/JP4161655B2/ja
Priority to KR1020047012641A priority patent/KR101014600B1/ko
Priority to US10/503,721 priority patent/US7201801B2/en
Priority to PCT/JP2003/011444 priority patent/WO2004024998A1/ja
Priority to EP03795314A priority patent/EP1538242B8/en
Publication of JP2004099416A publication Critical patent/JP2004099416A/ja
Publication of JP2004099416A5 publication Critical patent/JP2004099416A5/ja
Publication of JP4161655B2 publication Critical patent/JP4161655B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002267600A 2002-09-13 2002-09-13 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法 Expired - Fee Related JP4161655B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002267600A JP4161655B2 (ja) 2002-09-13 2002-09-13 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法
EP03795314A EP1538242B8 (en) 2002-09-13 2003-09-08 Heater for manufacturing a crystal, crystal manufacturing apparatus and crystal manufacturing method.
US10/503,721 US7201801B2 (en) 2002-09-13 2003-09-08 Heater for manufacturing a crystal
PCT/JP2003/011444 WO2004024998A1 (ja) 2002-09-13 2003-09-08 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法
KR1020047012641A KR101014600B1 (ko) 2002-09-13 2003-09-08 결정제조용 히터 및 결정제조장치와 결정제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002267600A JP4161655B2 (ja) 2002-09-13 2002-09-13 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法

Publications (3)

Publication Number Publication Date
JP2004099416A JP2004099416A (ja) 2004-04-02
JP2004099416A5 true JP2004099416A5 (https=) 2005-05-26
JP4161655B2 JP4161655B2 (ja) 2008-10-08

Family

ID=31986709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002267600A Expired - Fee Related JP4161655B2 (ja) 2002-09-13 2002-09-13 結晶製造用ヒーター及び結晶製造装置並びに結晶製造方法

Country Status (5)

Country Link
US (1) US7201801B2 (https=)
EP (1) EP1538242B8 (https=)
JP (1) JP4161655B2 (https=)
KR (1) KR101014600B1 (https=)
WO (1) WO2004024998A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4807033B2 (ja) * 2005-10-17 2011-11-02 日本精工株式会社 ハーフトロイダル型無段変速機
JP4919343B2 (ja) * 2007-02-06 2012-04-18 コバレントマテリアル株式会社 単結晶引上装置
JP2011093778A (ja) * 2009-09-29 2011-05-12 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハおよびシリコン単結晶の製造方法
JP2012051775A (ja) * 2010-09-03 2012-03-15 Hitachi Cable Ltd 発熱体及びこれを用いた結晶成長装置並びに気相成長装置
DE102011079284B3 (de) 2011-07-15 2012-11-29 Siltronic Ag Ringförmiger Widerstandsheizer zum Zuführen von Wärme zu einem wachsenden Einkristall
JP2013220954A (ja) * 2012-04-13 2013-10-28 Ibiden Co Ltd 黒鉛ヒータ
US10233562B2 (en) * 2013-04-24 2019-03-19 Sumco Techxiv Corporation Method for producing single crystal, and method for producing silicon wafer
JP6459406B2 (ja) * 2014-11-04 2019-01-30 住友電気工業株式会社 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法
KR101885210B1 (ko) * 2016-11-30 2018-09-11 웅진에너지 주식회사 히팅 유닛 및 이를 포함하는 잉곳 성장 장치
CN107460539B (zh) * 2017-06-30 2018-10-19 内蒙古中环光伏材料有限公司 一种单晶硅生产方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02172885A (ja) 1988-12-26 1990-07-04 Nkk Corp シリコン単結晶の製造方法
JP3401059B2 (ja) 1993-09-06 2003-04-28 松下電器産業株式会社 電気化学式ガスセンサー
JPH09208371A (ja) 1996-02-02 1997-08-12 Sumitomo Sitix Corp 単結晶引き上げ装置用ヒータ
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置
JP2956575B2 (ja) 1996-03-01 1999-10-04 住友金属工業株式会社 単結晶育成用抵抗発熱体
JPH09263491A (ja) * 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JP3587235B2 (ja) 1997-11-05 2004-11-10 三菱住友シリコン株式会社 単結晶育成装置用カーボンヒータ
JPH11139895A (ja) 1997-11-11 1999-05-25 Komatsu Electron Metals Co Ltd 結晶体引上げ装置のルツボ加熱用ヒーター
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法
US6093913A (en) * 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
JP3788116B2 (ja) 1999-07-26 2006-06-21 株式会社Ｓｕｍｃｏ 単結晶成長用多機能ヒーターおよび単結晶引上装置
US6285011B1 (en) * 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus

Similar Documents

Publication Publication Date Title
JP2004099416A5 (https=)
CN110042332A (zh) 一种铝合金及其制备方法
TW201120258A (en) Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
JPH09263491A (ja) シリコン単結晶の製造装置
Bhuiyan et al. Thermoelectric properties of n-type 95% Bi2Te3–5% Bi2Se3 materials fabricated by magnetic pulsed compaction (MPC)
Fu et al. Heat input adjustment process for unsupported aluminum alloy lattice struts continuous forming by wire arc-directed energy deposition
CN105925922B (zh) 一种CuCrZr合金的制备方法
EP1606426A1 (en) Method for treating tungsten carbide particles
EP1538242B1 (en) Heater for crystal formation, apparatus for forming crystal and method for forming crystal
CN115948670A (zh) 一种调幅分解型形状记忆合金及其制备方法
JP2007112691A (ja) シリコンの製造装置及び方法
CN119662935A (zh) 一种改善钛阴极辊焊接组织均匀性的局部电热处理工艺
JP2005103723A (ja) 金属ナノワイヤーの単結晶化方法及び装置
CN102560301A (zh) 镁稀土合金低温应变诱导热处理方法
Yin et al. Research on the synergistic improvement mechanism of plasticity and superelasticity of the Ni50. 3Ti29. 7Hf20 high temperature shape memory alloy by rolling and electric pulse coupling treatment
EP1780314A3 (en) Method for manufacturing silicon single crystal
KR20020071412A (ko) 수직-수평 온도구배를 갖는 대형 결정 육성장치 및 그육성방법
CN104694894A (zh) 一种高透磁钴靶及其制备方法
Guimarães et al. Hardening by a deformation induced phase transformation
TW201400208A (zh) 特殊金屬線材真空連續鑄造方法及其成品
Kirby et al. Basal slip in Mg3Cd
JPH04285091A (ja) 酸化物単結晶の製造装置
TWI263546B (en) Warm rolling method with temperature being controlled
Parris et al. Oxygen effects on the mechanical properties of Timetal-21 S
Ge et al. A New Type Metastable f 3 Titanium Alloy Ti-B 20 with High Strength