JP2004079705A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法 Download PDF

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Publication number
JP2004079705A
JP2004079705A JP2002236535A JP2002236535A JP2004079705A JP 2004079705 A JP2004079705 A JP 2004079705A JP 2002236535 A JP2002236535 A JP 2002236535A JP 2002236535 A JP2002236535 A JP 2002236535A JP 2004079705 A JP2004079705 A JP 2004079705A
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mis transistor
gate electrode
drain
type
circuit portion
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JP2002236535A
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JP2004079705A5 (enExample
Inventor
Masaru Nakamichi
中道　勝
Kazuhiko Sato
佐藤　一彦
Akio Nishida
西田　彰男
Munekatsu Nakagawa
中川　宗克
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2002236535A priority Critical patent/JP2004079705A/ja
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Publication of JP2004079705A5 publication Critical patent/JP2004079705A5/ja
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  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2002236535A 2002-08-14 2002-08-14 半導体集積回路装置およびその製造方法 Pending JP2004079705A (ja)

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JP2002236535A JP2004079705A (ja) 2002-08-14 2002-08-14 半導体集積回路装置およびその製造方法

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JP2002236535A JP2004079705A (ja) 2002-08-14 2002-08-14 半導体集積回路装置およびその製造方法

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JP2004079705A true JP2004079705A (ja) 2004-03-11
JP2004079705A5 JP2004079705A5 (enExample) 2005-11-04

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042092A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008536334A (ja) * 2005-04-15 2008-09-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 改善されたセル安定性及び性能のためのハイブリッド・バルク−ｓｏｉ６ｔ−ｓｒａｍセル
JP2014165371A (ja) * 2013-02-26 2014-09-08 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
US9064732B2 (en) 2012-08-31 2015-06-23 Samsung Electronics Co., Ltd. Semiconductor device including work function control film patterns and method for fabricating the same
JP5857225B2 (ja) * 2011-03-25 2016-02-10 パナソニックＩｐマネジメント株式会社 半導体装置
JP2020064265A (ja) * 2018-10-19 2020-04-23 キヤノン株式会社 表示装置および電子機器
KR20200090968A (ko) * 2008-10-24 2020-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008536334A (ja) * 2005-04-15 2008-09-04 インターナショナル・ビジネス・マシーンズ・コーポレーション 改善されたセル安定性及び性能のためのハイブリッド・バルク−ｓｏｉ６ｔ−ｓｒａｍセル
JP2008042092A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US8264045B2 (en) 2006-08-09 2012-09-11 Panasonic Corporation Semiconductor device including a SRAM section and a logic circuit section
US12009434B2 (en) 2008-10-24 2024-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistors and method for manufacturing the same
US12477781B2 (en) 2008-10-24 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102469154B1 (ko) 2008-10-24 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20200090968A (ko) * 2008-10-24 2020-07-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20210054029A (ko) * 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102251817B1 (ko) 2008-10-24 2021-05-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR102378956B1 (ko) 2008-10-24 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20220041242A (ko) * 2008-10-24 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US11563124B2 (en) 2008-10-24 2023-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including flip-flop circuit which includes transistors
JP5857225B2 (ja) * 2011-03-25 2016-02-10 パナソニックＩｐマネジメント株式会社 半導体装置
US9064732B2 (en) 2012-08-31 2015-06-23 Samsung Electronics Co., Ltd. Semiconductor device including work function control film patterns and method for fabricating the same
JP2014165371A (ja) * 2013-02-26 2014-09-08 Asahi Kasei Electronics Co Ltd 半導体装置の製造方法及び半導体装置
JP7145032B2 (ja) 2018-10-19 2022-09-30 キヤノン株式会社 表示装置および電子機器
JP2020064265A (ja) * 2018-10-19 2020-04-23 キヤノン株式会社 表示装置および電子機器
US12119410B2 (en) 2018-10-19 2024-10-15 Canon Kabushiki Kaisha Display device and electronic device

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