JP2004072778A - 薄膜バルク音響共鳴器フィルタの製造方法および薄膜バルク音響共鳴器フィルタを用いた回路 - Google Patents
薄膜バルク音響共鳴器フィルタの製造方法および薄膜バルク音響共鳴器フィルタを用いた回路 Download PDFInfo
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- 239000010409 thin film Substances 0.000 claims abstract description 39
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- 239000000758 substrate Substances 0.000 claims description 16
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- 230000003014 reinforcing effect Effects 0.000 claims description 8
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- 229910052796 boron Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
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- 239000012528 membrane Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
【解決手段】
薄膜バルク音響共鳴器フィルタ10は、同一の膜35上に形成されている複数の相互接続された直列及び分岐薄膜バルク音響共鳴器38により形成されている。薄膜バルク音響共鳴器38のそれぞれは、各薄膜バルク音響共鳴器38の底部電極32を形成するように定められている1つの共通の下部導電層から形成されている。1つの共通の導電層は、各薄膜バルク音響共鳴器38の各上部電極36を形成するように定められている。パターン化されていることもされていないこともある1つの共通の圧電薄膜層34は、1つの連続する又は連続しない薄膜を形成する方法。
【選択図】 図1
Description
同一の基板上に複数の薄膜バルク音響共鳴器を形成することと、単一の導電層から、各薄膜バルク音響共鳴器の上に配置される上部電極を形成することとを含んで成る方法にある。
また、本発明は、基板と、前記基板上に形成されている複数の薄膜バルク音響共鳴器と、分岐薄膜バルク音響共鳴器により結合されている複数の直列に接続されている薄膜バルク音響共鳴器とを備えている集積回路にある。
Claims (17)
- 薄膜バルク音響共鳴器を形成する方法であって、
同一の基板上に複数の薄膜バルク音響共鳴器を形成することと、
単一の導電層から、各薄膜バルク音響共鳴器の上に配置される上部電極を形成することと
を含んで成る方法。 - 複数の薄膜バルク音響共鳴器を形成することは、少なくとも1つの分岐薄膜バルク音響共鳴器により結合された複数の直列に接続された薄膜バルク音響共鳴器を同一の基板上に形成することを含む請求項1に記載の方法。
- 前記基板を強化するために前記基板の端から端まで強化ストリップを形成することを含む請求項1に記載の方法。
- 少なくとも2つの互いに平行な強化ストリップを形成することを含む請求項3に記載の方法。
- 前記基板の端から端まで1つの領域を植えつけることにより強化ストリップを形成することを含む請求項3に記載の方法。
- ホウ素及び酸素から成る群から選択された種を使用してストリップを植えつけることを含む請求項5に記載の方法。
- 前記基板の裏面をエッチングにより除去し、裏面キャビティを形成するために裏面エッチングを使用することにより薄膜バルク音響共鳴器を形成することを含む請求項1に記載の方法。
- 前記基板内に形成された強化ストリップをエッチングにより除去しない腐食剤を使用することを含む請求項7に記載の方法。
- 同一の裏面キャビティ上に少なくとも2つの共鳴器を形成することを含む請求項7に記載の方法。
- 圧電材料から成る単一の薄膜を使用して、同一の基板上に複数の薄膜バルク音響共鳴器のための1つの圧電層を形成することを含む請求項1に記載の方法。
- 前記圧電薄膜をパターン化し、前記圧電薄膜の一部を除去し、除去された部分に誘電材料を代わりに設けることを含む請求項10に記載の方法。
- 基板と、
前記基板上に形成されている複数の薄膜バルク音響共鳴器と、
分岐薄膜バルク音響共鳴器により結合されている複数の直列に接続されている薄膜バルク音響共鳴器と
を備えている集積回路。 - 前記共鳴器の下に単一の裏面キャビティを含む請求項12に記載の回路。
- 前記キャビティの端から端まで延びている複数の強化ストリップを含む請求項13に記載の回路。
- 前記強化ストリップはイオン植えつけされた基板材料から成る請求項14に記載の回路。
- 一対の互いに平行な強化ストリップを含む請求項14に記載の回路。
- 前記共鳴器のそれぞれは、それぞれ1つの上部電極を含み、前記共鳴器の前記上部電極は同一平面内に位置する請求項12に記載の回路。
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US10/215,407 US20040027030A1 (en) | 2002-08-08 | 2002-08-08 | Manufacturing film bulk acoustic resonator filters |
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JP2009254140A Division JP4950267B2 (ja) | 2002-08-08 | 2009-11-05 | 薄膜バルク音響共鳴器フィルタの製造方法および薄膜バルク音響共鳴器フィルタを用いた回路 |
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JP2003289608A Pending JP2004072778A (ja) | 2002-08-08 | 2003-08-08 | 薄膜バルク音響共鳴器フィルタの製造方法および薄膜バルク音響共鳴器フィルタを用いた回路 |
JP2009254140A Expired - Fee Related JP4950267B2 (ja) | 2002-08-08 | 2009-11-05 | 薄膜バルク音響共鳴器フィルタの製造方法および薄膜バルク音響共鳴器フィルタを用いた回路 |
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Country | Link |
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US (2) | US20040027030A1 (ja) |
EP (1) | EP1388938B1 (ja) |
JP (2) | JP2004072778A (ja) |
KR (1) | KR100485046B1 (ja) |
CN (1) | CN1327610C (ja) |
AT (1) | ATE382205T1 (ja) |
AU (1) | AU2003298535A1 (ja) |
DE (2) | DE10333782A1 (ja) |
GB (1) | GB2392329B (ja) |
HK (1) | HK1060660A1 (ja) |
MY (1) | MY137043A (ja) |
TW (1) | TWI234343B (ja) |
WO (1) | WO2004036744A2 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3944161B2 (ja) * | 2003-12-25 | 2007-07-11 | 株式会社東芝 | 薄膜バルク波音響共振器及び薄膜バルク波音響共振器の製造方法 |
US20050248420A1 (en) * | 2004-05-07 | 2005-11-10 | Qing Ma | Forming integrated plural frequency band film bulk acoustic resonators |
JP4535841B2 (ja) * | 2004-10-28 | 2010-09-01 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びこれを用いたフィルタ |
KR100615711B1 (ko) * | 2005-01-25 | 2006-08-25 | 삼성전자주식회사 | 필름 벌크 어쿠스틱 공진기를 이용한 대역 필터 및 그제조방법. |
DE602007006335D1 (en) * | 2006-10-09 | 2010-06-17 | Nxp Bv | Resonator |
US7851333B2 (en) * | 2007-03-15 | 2010-12-14 | Infineon Technologies Ag | Apparatus comprising a device and method for producing it |
JP5279068B2 (ja) * | 2008-02-15 | 2013-09-04 | 太陽誘電株式会社 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9525397B2 (en) | 2011-03-29 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic reflector, frame and collar |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
US8330325B1 (en) * | 2011-06-16 | 2012-12-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer |
US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
US9331666B2 (en) | 2012-10-22 | 2016-05-03 | Qualcomm Mems Technologies, Inc. | Composite dilation mode resonators |
US9385022B2 (en) | 2014-05-21 | 2016-07-05 | Globalfoundries Inc. | Silicon waveguide on bulk silicon substrate and methods of forming |
KR101598294B1 (ko) * | 2014-09-15 | 2016-02-26 | 삼성전기주식회사 | 음향 공진기 및 그 제조 방법 |
KR101730335B1 (ko) * | 2015-01-27 | 2017-04-27 | 주하이 어드밴스드 칩 캐리어스 앤드 일렉트로닉 서브스트레이트 솔루션즈 테크놀러지즈 컴퍼니 리미티드 | 필름 벌크 음향 공진기 필터 제조 방법 |
US10432167B2 (en) * | 2016-04-01 | 2019-10-01 | Intel Corporation | Piezoelectric package-integrated crystal devices |
TWI632772B (zh) * | 2016-10-17 | 2018-08-11 | 穩懋半導體股份有限公司 | 具有質量調整結構之體聲波共振器及其應用於體聲波濾波器 |
KR20190067706A (ko) | 2017-12-07 | 2019-06-17 | 인피니언 테크놀로지스 아게 | 무선 주파수 필터를 위한 시스템 및 방법 |
CN110931922A (zh) * | 2019-11-25 | 2020-03-27 | 武汉大学 | 一种基于压电双模态谐振器的双通带滤波器 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US141946A (en) * | 1873-08-19 | Improvement in steam-traps | ||
US98761A (en) * | 1870-01-11 | Improvement in bee-hives | ||
US4081769A (en) * | 1976-09-13 | 1978-03-28 | Texas Instruments Incorporated | Acoustic surface wave resonator with suppressed direct coupled response |
US4531267A (en) * | 1982-03-30 | 1985-07-30 | Honeywell Inc. | Method for forming a pressure sensor |
US4502932A (en) * | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
JPS63187714A (ja) * | 1987-01-29 | 1988-08-03 | Toshiba Corp | 圧電薄膜共振子 |
US5160870A (en) * | 1990-06-25 | 1992-11-03 | Carson Paul L | Ultrasonic image sensing array and method |
US5231327A (en) * | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
US5192925A (en) * | 1991-05-02 | 1993-03-09 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator and method of fabricating the same |
US5692279A (en) * | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
JPH09130199A (ja) * | 1995-10-27 | 1997-05-16 | Mitsubishi Electric Corp | 圧電薄膜素子およびその製法 |
US5801476A (en) * | 1996-08-09 | 1998-09-01 | The United States Of America As Represented By The Secretary Of The Army | Thickness mode acoustic wave resonator |
US5872493A (en) * | 1997-03-13 | 1999-02-16 | Nokia Mobile Phones, Ltd. | Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror |
US6028389A (en) * | 1998-05-26 | 2000-02-22 | The Charles Stark Draper Laboratory, Inc. | Micromachined piezoelectric transducer |
US5942958A (en) * | 1998-07-27 | 1999-08-24 | Tfr Technologies, Inc. | Symmetrical piezoelectric resonator filter |
FI113211B (fi) * | 1998-12-30 | 2004-03-15 | Nokia Corp | Balansoitu suodatinrakenne ja matkaviestinlaite |
US6262637B1 (en) * | 1999-06-02 | 2001-07-17 | Agilent Technologies, Inc. | Duplexer incorporating thin-film bulk acoustic resonators (FBARs) |
US6349454B1 (en) * | 1999-07-29 | 2002-02-26 | Agere Systems Guardian Corp. | Method of making thin film resonator apparatus |
FI107661B (fi) * | 1999-11-29 | 2001-09-14 | Nokia Mobile Phones Ltd | Menetelmä balansoidun suotimen keskitaajuuden säätämiseksi ja joukko balansoituja suotimia |
KR100348270B1 (ko) * | 2000-04-25 | 2002-08-09 | 엘지전자 주식회사 | 고주파용 fbar 공진기 및 그 제조방법 |
US6384697B1 (en) * | 2000-05-08 | 2002-05-07 | Agilent Technologies, Inc. | Cavity spanning bottom electrode of a substrate-mounted bulk wave acoustic resonator |
US6486751B1 (en) * | 2000-09-26 | 2002-11-26 | Agere Systems Inc. | Increased bandwidth thin film resonator having a columnar structure |
KR20020036547A (ko) * | 2000-11-10 | 2002-05-16 | 송재인 | 박막 벌크 오코스틱 공진기의 제조방법 |
JP2002223145A (ja) * | 2000-11-22 | 2002-08-09 | Murata Mfg Co Ltd | 圧電共振子とそれを用いたフィルタおよび電子機器 |
GB0029090D0 (en) * | 2000-11-29 | 2001-01-10 | Univ Cranfield | Improvements in or relating to filters |
KR100372692B1 (ko) * | 2000-12-19 | 2003-02-15 | 삼성전기주식회사 | 로딩 스터브를 이용한 적층형 필터의 감쇄극 조정방법 |
JP2003229743A (ja) * | 2001-11-29 | 2003-08-15 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
JP3969224B2 (ja) * | 2002-01-08 | 2007-09-05 | 株式会社村田製作所 | 圧電共振子及びそれを用いた圧電フィルタ・デュプレクサ・通信装置 |
US20030141946A1 (en) * | 2002-01-31 | 2003-07-31 | Ruby Richard C. | Film bulk acoustic resonator (FBAR) and the method of making the same |
AU2003230088A1 (en) * | 2002-05-20 | 2003-12-02 | Koninklijke Philips Electronics N.V. | Filter structure |
-
2002
- 2002-08-08 US US10/215,407 patent/US20040027030A1/en not_active Abandoned
-
2003
- 2003-07-09 TW TW092118727A patent/TWI234343B/zh not_active IP Right Cessation
- 2003-07-10 KR KR10-2003-0046724A patent/KR100485046B1/ko active IP Right Grant
- 2003-07-11 MY MYPI20032608A patent/MY137043A/en unknown
- 2003-07-24 AT AT03016929T patent/ATE382205T1/de not_active IP Right Cessation
- 2003-07-24 DE DE10333782A patent/DE10333782A1/de not_active Withdrawn
- 2003-07-24 DE DE60318283T patent/DE60318283T2/de not_active Expired - Lifetime
- 2003-07-24 EP EP03016929A patent/EP1388938B1/en not_active Expired - Lifetime
- 2003-08-01 AU AU2003298535A patent/AU2003298535A1/en not_active Abandoned
- 2003-08-01 WO PCT/US2003/024142 patent/WO2004036744A2/en not_active Application Discontinuation
- 2003-08-06 GB GB0318456A patent/GB2392329B/en not_active Expired - Fee Related
- 2003-08-08 JP JP2003289608A patent/JP2004072778A/ja active Pending
- 2003-08-08 CN CNB03155024XA patent/CN1327610C/zh not_active Expired - Fee Related
-
2004
- 2004-05-19 HK HK04103550A patent/HK1060660A1/xx not_active IP Right Cessation
-
2006
- 2006-01-19 US US11/335,920 patent/US20060176126A1/en not_active Abandoned
-
2009
- 2009-11-05 JP JP2009254140A patent/JP4950267B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60318283D1 (de) | 2008-02-07 |
KR20040014200A (ko) | 2004-02-14 |
US20040027030A1 (en) | 2004-02-12 |
WO2004036744A2 (en) | 2004-04-29 |
AU2003298535A8 (en) | 2004-05-04 |
DE10333782A1 (de) | 2004-03-18 |
CN1327610C (zh) | 2007-07-18 |
HK1060660A1 (en) | 2004-08-13 |
DE60318283T2 (de) | 2008-12-11 |
EP1388938B1 (en) | 2007-12-26 |
GB2392329A (en) | 2004-02-25 |
GB0318456D0 (en) | 2003-09-10 |
GB2392329B (en) | 2005-03-16 |
CN1489284A (zh) | 2004-04-14 |
US20060176126A1 (en) | 2006-08-10 |
KR100485046B1 (ko) | 2005-04-22 |
ATE382205T1 (de) | 2008-01-15 |
WO2004036744A3 (en) | 2004-07-22 |
JP2010063142A (ja) | 2010-03-18 |
AU2003298535A1 (en) | 2004-05-04 |
MY137043A (en) | 2008-12-31 |
TWI234343B (en) | 2005-06-11 |
EP1388938A3 (en) | 2004-06-16 |
TW200408190A (en) | 2004-05-16 |
JP4950267B2 (ja) | 2012-06-13 |
EP1388938A2 (en) | 2004-02-11 |
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