JP2004071655A5 - - Google Patents

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Publication number
JP2004071655A5
JP2004071655A5 JP2002225268A JP2002225268A JP2004071655A5 JP 2004071655 A5 JP2004071655 A5 JP 2004071655A5 JP 2002225268 A JP2002225268 A JP 2002225268A JP 2002225268 A JP2002225268 A JP 2002225268A JP 2004071655 A5 JP2004071655 A5 JP 2004071655A5
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JP
Japan
Prior art keywords
nitride semiconductor
type nitride
opening
light emitting
emitting device
Prior art date
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Granted
Application number
JP2002225268A
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English (en)
Japanese (ja)
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JP2004071655A (ja
JP4239508B2 (ja
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Priority to JP2002225268A priority Critical patent/JP4239508B2/ja
Priority claimed from JP2002225268A external-priority patent/JP4239508B2/ja
Publication of JP2004071655A publication Critical patent/JP2004071655A/ja
Publication of JP2004071655A5 publication Critical patent/JP2004071655A5/ja
Application granted granted Critical
Publication of JP4239508B2 publication Critical patent/JP4239508B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002225268A 2002-08-01 2002-08-01 発光素子 Expired - Fee Related JP4239508B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002225268A JP4239508B2 (ja) 2002-08-01 2002-08-01 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002225268A JP4239508B2 (ja) 2002-08-01 2002-08-01 発光素子

Publications (3)

Publication Number Publication Date
JP2004071655A JP2004071655A (ja) 2004-03-04
JP2004071655A5 true JP2004071655A5 (enExample) 2005-10-27
JP4239508B2 JP4239508B2 (ja) 2009-03-18

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Family Applications (1)

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JP2002225268A Expired - Fee Related JP4239508B2 (ja) 2002-08-01 2002-08-01 発光素子

Country Status (1)

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JP (1) JP4239508B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100799857B1 (ko) * 2003-10-27 2008-01-31 삼성전기주식회사 전극 구조체 및 이를 구비하는 반도체 발광 소자
KR100586949B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
JP2006066868A (ja) 2004-03-23 2006-03-09 Toyoda Gosei Co Ltd 固体素子および固体素子デバイス
KR100631840B1 (ko) * 2004-06-03 2006-10-09 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
KR100576870B1 (ko) 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
US7291865B2 (en) 2004-09-29 2007-11-06 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device
JP4622426B2 (ja) * 2004-09-29 2011-02-02 豊田合成株式会社 半導体発光素子
EP1804301B1 (en) 2004-10-19 2017-01-11 Nichia Corporation Semiconductor element
KR100601992B1 (ko) * 2005-02-16 2006-07-18 삼성전기주식회사 반사전극 및 이를 구비하는 화합물 반도체 발광소자
JP4967243B2 (ja) * 2005-03-08 2012-07-04 三菱化学株式会社 ＧａＮ系発光ダイオードおよび発光装置
CN100369279C (zh) * 2005-05-27 2008-02-13 中国科学院物理研究所 桥式n电极型氮化镓基大管芯发光二极管及制备方法
JP2007027540A (ja) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd 半導体発光素子およびこれを用いた照明装置
JP2007027539A (ja) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd 半導体発光素子およびこれを用いた照明装置
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
US7714340B2 (en) * 2006-09-06 2010-05-11 Palo Alto Research Center Incorporated Nitride light-emitting device
JP5176334B2 (ja) * 2007-02-01 2013-04-03 日亜化学工業株式会社 半導体発光素子
JP2009238931A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP5361569B2 (ja) * 2008-06-26 2013-12-04 京セラ株式会社 半導体発光素子及びその製造方法
JP5197186B2 (ja) 2008-06-30 2013-05-15 株式会社東芝 半導体発光装置
US8536595B2 (en) 2010-08-31 2013-09-17 Micron Technology, Inc. Solid state lighting devices with low contact resistance and methods of manufacturing
JP2012186195A (ja) 2011-03-03 2012-09-27 Toshiba Corp 半導体発光素子及びその製造方法
JP5321656B2 (ja) * 2011-08-05 2013-10-23 三菱化学株式会社 ＧａＮ系発光ダイオードおよび発光装置
DE102012107384A1 (de) * 2012-08-10 2014-02-13 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Spiegelbereichs auf einem Halbleiterkörper
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
DE102019103638A1 (de) 2019-02-13 2020-08-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement mit abschnitten einer leitfähigen schicht und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

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