JP2004061884A - フォトマスク - Google Patents
フォトマスク Download PDFInfo
- Publication number
- JP2004061884A JP2004061884A JP2002220420A JP2002220420A JP2004061884A JP 2004061884 A JP2004061884 A JP 2004061884A JP 2002220420 A JP2002220420 A JP 2002220420A JP 2002220420 A JP2002220420 A JP 2002220420A JP 2004061884 A JP2004061884 A JP 2004061884A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- mask pattern
- conductive film
- foreign matter
- pellicle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000006378 damage Effects 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 239000011651 chromium Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000000275 quality assurance Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002220420A JP2004061884A (ja) | 2002-07-29 | 2002-07-29 | フォトマスク |
| US10/456,667 US7074526B2 (en) | 2002-07-29 | 2003-06-05 | Photomask covered with light-transmissive and electrically-conductive polymer material |
| TW092115189A TW200407662A (en) | 2002-07-29 | 2003-06-05 | Photomask covered with light-transmissive and electrically-conductive polymer material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002220420A JP2004061884A (ja) | 2002-07-29 | 2002-07-29 | フォトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004061884A true JP2004061884A (ja) | 2004-02-26 |
| JP2004061884A5 JP2004061884A5 (enExample) | 2005-09-29 |
Family
ID=30768017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002220420A Pending JP2004061884A (ja) | 2002-07-29 | 2002-07-29 | フォトマスク |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7074526B2 (enExample) |
| JP (1) | JP2004061884A (enExample) |
| TW (1) | TW200407662A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691547B2 (en) | 2006-03-16 | 2010-04-06 | Microtome Precision, Inc. | Reticle containing structures for sensing electric field exposure and a method for its use |
| JP6767601B1 (ja) * | 2019-04-10 | 2020-10-14 | Dic株式会社 | フォトマスク |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7446661B2 (en) * | 2006-06-28 | 2008-11-04 | International Business Machines Corporation | System and method for measuring RFID signal strength within shielded locations |
| US7723704B2 (en) * | 2006-11-10 | 2010-05-25 | Globalfoundries Inc. | EUV pellicle with increased EUV light transmittance |
| CN112835266B (zh) * | 2019-11-25 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | 一种光罩载台以及曝光装置 |
| US12087605B2 (en) * | 2020-09-30 | 2024-09-10 | Gudeng Precision Industrial Co., Ltd. | Reticle pod with antistatic capability |
| CN112650019A (zh) * | 2021-01-23 | 2021-04-13 | 烟台正海科技股份有限公司 | 一种防静电铬版及其制备工艺 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949131A (en) * | 1974-06-19 | 1976-04-06 | Bell Telephone Laboratories, Incorporated | Photomasks with antistatic control |
| JPH08101497A (ja) * | 1994-09-30 | 1996-04-16 | Shin Etsu Chem Co Ltd | ペリクル |
| JP2000012428A (ja) * | 1998-06-19 | 2000-01-14 | Canon Inc | X線マスク構造体、該x線マスク構造体を用いたx線露光方法、前記x線マスク構造体を用いたx線露光装置、前記x線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス |
| US6635393B2 (en) * | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
-
2002
- 2002-07-29 JP JP2002220420A patent/JP2004061884A/ja active Pending
-
2003
- 2003-06-05 US US10/456,667 patent/US7074526B2/en not_active Expired - Lifetime
- 2003-06-05 TW TW092115189A patent/TW200407662A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691547B2 (en) | 2006-03-16 | 2010-04-06 | Microtome Precision, Inc. | Reticle containing structures for sensing electric field exposure and a method for its use |
| JP6767601B1 (ja) * | 2019-04-10 | 2020-10-14 | Dic株式会社 | フォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| US7074526B2 (en) | 2006-07-11 |
| TW200407662A (en) | 2004-05-16 |
| US20040018437A1 (en) | 2004-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050511 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050511 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080806 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080826 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090113 |