TW200407662A - Photomask covered with light-transmissive and electrically-conductive polymer material - Google Patents

Photomask covered with light-transmissive and electrically-conductive polymer material Download PDF

Info

Publication number
TW200407662A
TW200407662A TW092115189A TW92115189A TW200407662A TW 200407662 A TW200407662 A TW 200407662A TW 092115189 A TW092115189 A TW 092115189A TW 92115189 A TW92115189 A TW 92115189A TW 200407662 A TW200407662 A TW 200407662A
Authority
TW
Taiwan
Prior art keywords
photomask
light
substrate
conductive film
mask
Prior art date
Application number
TW092115189A
Other languages
English (en)
Chinese (zh)
Inventor
Yoji Hata
Original Assignee
Umc Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Umc Japan filed Critical Umc Japan
Publication of TW200407662A publication Critical patent/TW200407662A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW092115189A 2002-07-29 2003-06-05 Photomask covered with light-transmissive and electrically-conductive polymer material TW200407662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002220420A JP2004061884A (ja) 2002-07-29 2002-07-29 フォトマスク

Publications (1)

Publication Number Publication Date
TW200407662A true TW200407662A (en) 2004-05-16

Family

ID=30768017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092115189A TW200407662A (en) 2002-07-29 2003-06-05 Photomask covered with light-transmissive and electrically-conductive polymer material

Country Status (3)

Country Link
US (1) US7074526B2 (enExample)
JP (1) JP2004061884A (enExample)
TW (1) TW200407662A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421628B (zh) * 2006-11-10 2014-01-01 Globalfoundries Us Inc 具有超紫外線(euv)光透光率之euv膜結構
CN112650019A (zh) * 2021-01-23 2021-04-13 烟台正海科技股份有限公司 一种防静电铬版及其制备工艺

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691547B2 (en) 2006-03-16 2010-04-06 Microtome Precision, Inc. Reticle containing structures for sensing electric field exposure and a method for its use
US7446661B2 (en) * 2006-06-28 2008-11-04 International Business Machines Corporation System and method for measuring RFID signal strength within shielded locations
JP6767601B1 (ja) * 2019-04-10 2020-10-14 Dic株式会社 フォトマスク
CN112838035B (zh) * 2019-11-25 2022-12-30 夏泰鑫半导体(青岛)有限公司 一种光罩盒及光罩储存柜
US12087605B2 (en) * 2020-09-30 2024-09-10 Gudeng Precision Industrial Co., Ltd. Reticle pod with antistatic capability

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949131A (en) * 1974-06-19 1976-04-06 Bell Telephone Laboratories, Incorporated Photomasks with antistatic control
JPH08101497A (ja) * 1994-09-30 1996-04-16 Shin Etsu Chem Co Ltd ペリクル
JP2000012428A (ja) * 1998-06-19 2000-01-14 Canon Inc X線マスク構造体、該x線マスク構造体を用いたx線露光方法、前記x線マスク構造体を用いたx線露光装置、前記x線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス
US6635393B2 (en) * 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421628B (zh) * 2006-11-10 2014-01-01 Globalfoundries Us Inc 具有超紫外線(euv)光透光率之euv膜結構
CN112650019A (zh) * 2021-01-23 2021-04-13 烟台正海科技股份有限公司 一种防静电铬版及其制备工艺

Also Published As

Publication number Publication date
US7074526B2 (en) 2006-07-11
JP2004061884A (ja) 2004-02-26
US20040018437A1 (en) 2004-01-29

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