TW200407662A - Photomask covered with light-transmissive and electrically-conductive polymer material - Google Patents
Photomask covered with light-transmissive and electrically-conductive polymer material Download PDFInfo
- Publication number
- TW200407662A TW200407662A TW092115189A TW92115189A TW200407662A TW 200407662 A TW200407662 A TW 200407662A TW 092115189 A TW092115189 A TW 092115189A TW 92115189 A TW92115189 A TW 92115189A TW 200407662 A TW200407662 A TW 200407662A
- Authority
- TW
- Taiwan
- Prior art keywords
- photomask
- light
- substrate
- conductive film
- mask
- Prior art date
Links
- 229920001940 conductive polymer Polymers 0.000 title claims abstract description 11
- 239000002861 polymer material Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 35
- 230000005611 electricity Effects 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000007774 longterm Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000275 quality assurance Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002220420A JP2004061884A (ja) | 2002-07-29 | 2002-07-29 | フォトマスク |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200407662A true TW200407662A (en) | 2004-05-16 |
Family
ID=30768017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092115189A TW200407662A (en) | 2002-07-29 | 2003-06-05 | Photomask covered with light-transmissive and electrically-conductive polymer material |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7074526B2 (enExample) |
| JP (1) | JP2004061884A (enExample) |
| TW (1) | TW200407662A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI421628B (zh) * | 2006-11-10 | 2014-01-01 | Globalfoundries Us Inc | 具有超紫外線（ｅｕｖ）光透光率之ｅｕｖ膜結構 |
| CN112650019A (zh) * | 2021-01-23 | 2021-04-13 | 烟台正海科技股份有限公司 | 一种防静电铬版及其制备工艺 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691547B2 (en) | 2006-03-16 | 2010-04-06 | Microtome Precision, Inc. | Reticle containing structures for sensing electric field exposure and a method for its use |
| US7446661B2 (en) * | 2006-06-28 | 2008-11-04 | International Business Machines Corporation | System and method for measuring RFID signal strength within shielded locations |
| US20220197130A1 (en) * | 2019-04-10 | 2022-06-23 | Dic Corporation | Photomask |
| CN112835266B (zh) * | 2019-11-25 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | 一种光罩载台以及曝光装置 |
| US12087605B2 (en) * | 2020-09-30 | 2024-09-10 | Gudeng Precision Industrial Co., Ltd. | Reticle pod with antistatic capability |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3949131A (en) * | 1974-06-19 | 1976-04-06 | Bell Telephone Laboratories, Incorporated | Photomasks with antistatic control |
| JPH08101497A (ja) * | 1994-09-30 | 1996-04-16 | Shin Etsu Chem Co Ltd | ペリクル |
| JP2000012428A (ja) * | 1998-06-19 | 2000-01-14 | Canon Inc | Ｘ線マスク構造体、該ｘ線マスク構造体を用いたｘ線露光方法、前記ｘ線マスク構造体を用いたｘ線露光装置、前記ｘ線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス |
| US6635393B2 (en) * | 2001-03-23 | 2003-10-21 | Numerical Technologies, Inc. | Blank for alternating PSM photomask with charge dissipation layer |
-
2002
- 2002-07-29 JP JP2002220420A patent/JP2004061884A/ja active Pending
-
2003
- 2003-06-05 US US10/456,667 patent/US7074526B2/en not_active Expired - Lifetime
- 2003-06-05 TW TW092115189A patent/TW200407662A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI421628B (zh) * | 2006-11-10 | 2014-01-01 | Globalfoundries Us Inc | 具有超紫外線（ｅｕｖ）光透光率之ｅｕｖ膜結構 |
| CN112650019A (zh) * | 2021-01-23 | 2021-04-13 | 烟台正海科技股份有限公司 | 一种防静电铬版及其制备工艺 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004061884A (ja) | 2004-02-26 |
| US20040018437A1 (en) | 2004-01-29 |
| US7074526B2 (en) | 2006-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3892973A (en) | Mask structure for X-ray lithography | |
| US12038686B2 (en) | Pellicle frame, pellicle, and method for peeling pellicle | |
| US11782340B2 (en) | Pellicle frame and pellicle | |
| US8097329B2 (en) | Thin film device having thin film elements and thin film pattern on thin film elements, and method of fabricating the same | |
| US12306532B2 (en) | Pellicle frame and pellicle | |
| US20060240335A1 (en) | Mask blank and process for producing and process for using the same, and mask and process for producing and process for using the same | |
| TW200407662A (en) | Photomask covered with light-transmissive and electrically-conductive polymer material | |
| JP6312993B2 (ja) | 耐放射線シールド | |
| TW200540918A (en) | Color image sensor device and fabrication method thereof | |
| US6309781B1 (en) | Photomask provided with an ESD-precluding envelope | |
| US20200103743A1 (en) | Euv photo masks | |
| TW558672B (en) | Mask for defining a guard ring pattern | |
| CN115032860A (zh) | 光罩及半导体晶圆的制造方法 | |
| TWI291079B (en) | Photomask | |
| CN102073075A (zh) | 遮光元件阵列的制造方法 | |
| EP0323264A2 (en) | X-ray exposure process using an electrically conductive x-ray mask | |
| JP2001147311A (ja) | 光学素子の製造方法 | |
| CN118455751A (zh) | 触控屏扩散膜的制作方法、触控屏及其制作方法 | |
| JPS6114639A (ja) | フオトマスク | |
| JPH02309A (ja) | Ｘ線用マスクとそれをを用いた露光方法 | |
| JPH0444041A (ja) | 露光マスク | |
| JPS58152244A (ja) | 露光方法 | |
| JPS60107033A (ja) | 荷電子ビ−ム描画用基板 | |
| JPS63169773A (ja) | ａ−Ｓｉ受光素子の製造方法 | |
| JPS60208755A (ja) | 露光方法及び転写方法 |