JP2004022857A - 基板処理装置、基板処理方法及び半導体装置の製造方法 - Google Patents

基板処理装置、基板処理方法及び半導体装置の製造方法 Download PDF

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JP2004022857A
JP2004022857A JP2002176769A JP2002176769A JP2004022857A JP 2004022857 A JP2004022857 A JP 2004022857A JP 2002176769 A JP2002176769 A JP 2002176769A JP 2002176769 A JP2002176769 A JP 2002176769A JP 2004022857 A JP2004022857 A JP 2004022857A
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substrate
vaporizing
hydrophobizing agent
vaporized
hmds
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JP2004022857A5 (enExample
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Minoru Hirose
廣瀬　実
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Fujitsu Ltd
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Fujitsu Ltd
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002176769A 2002-06-18 2002-06-18 基板処理装置、基板処理方法及び半導体装置の製造方法 Pending JP2004022857A (ja)

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JP2002176769A JP2004022857A (ja) 2002-06-18 2002-06-18 基板処理装置、基板処理方法及び半導体装置の製造方法

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JP2004022857A5 JP2004022857A5 (enExample) 2005-10-13

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101526760B (zh) * 2009-04-10 2011-09-07 友达光电股份有限公司 基板处理系统及显影方法
JP2012059924A (ja) * 2010-09-09 2012-03-22 Lapis Semiconductor Co Ltd 感光性レジストパターンの形成方法、及び半導体装置の製造方法
CN107011719A (zh) * 2017-05-04 2017-08-04 德清美联新材料科技有限公司 一种用于涂敷剂的疏水超细二氧化硅的制备方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101526760B (zh) * 2009-04-10 2011-09-07 友达光电股份有限公司 基板处理系统及显影方法
JP2012059924A (ja) * 2010-09-09 2012-03-22 Lapis Semiconductor Co Ltd 感光性レジストパターンの形成方法、及び半導体装置の製造方法
CN107011719A (zh) * 2017-05-04 2017-08-04 德清美联新材料科技有限公司 一种用于涂敷剂的疏水超细二氧化硅的制备方法

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