JP2004022067A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2004022067A JP2004022067A JP2002175531A JP2002175531A JP2004022067A JP 2004022067 A JP2004022067 A JP 2004022067A JP 2002175531 A JP2002175531 A JP 2002175531A JP 2002175531 A JP2002175531 A JP 2002175531A JP 2004022067 A JP2004022067 A JP 2004022067A
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- JP
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- Prior art keywords
- high voltage
- voltage
- memory cell
- semiconductor device
- cell group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000005856 abnormality Effects 0.000 abstract description 19
- 230000002950 deficient Effects 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 21
- 238000007689 inspection Methods 0.000 description 17
- 230000002159 abnormal effect Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 102100031024 CCR4-NOT transcription complex subunit 1 Human genes 0.000 description 2
- 102100031025 CCR4-NOT transcription complex subunit 2 Human genes 0.000 description 2
- 101000919674 Caenorhabditis elegans CCR4-NOT transcription complex subunit let-711 Proteins 0.000 description 2
- 101001092183 Drosophila melanogaster Regulator of gene activity Proteins 0.000 description 2
- 101000919672 Homo sapiens CCR4-NOT transcription complex subunit 1 Proteins 0.000 description 2
- 101000919667 Homo sapiens CCR4-NOT transcription complex subunit 2 Proteins 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002175531A JP2004022067A (ja) | 2002-06-17 | 2002-06-17 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002175531A JP2004022067A (ja) | 2002-06-17 | 2002-06-17 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004022067A true JP2004022067A (ja) | 2004-01-22 |
| JP2004022067A5 JP2004022067A5 (enExample) | 2005-09-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002175531A Pending JP2004022067A (ja) | 2002-06-17 | 2002-06-17 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004022067A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100638461B1 (ko) * | 2004-12-30 | 2006-10-24 | 매그나칩 반도체 유한회사 | 플래시 메모리에서의 전하 펌핑 장치 및 방법 |
| JP2009245573A (ja) * | 2001-01-03 | 2009-10-22 | Samsung Electronics Co Ltd | 外部ピンを通じてワードライン電圧を出力する半導体メモリ装置及びその電圧測定方法 |
| JP2017174485A (ja) * | 2016-03-25 | 2017-09-28 | ローム株式会社 | 半導体記憶装置 |
| JP2022173138A (ja) * | 2021-05-06 | 2022-11-17 | インフィニオン テクノロジーズ アクチエンゲゼルシャフト | 電源・デジタル制御ループ |
-
2002
- 2002-06-17 JP JP2002175531A patent/JP2004022067A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009245573A (ja) * | 2001-01-03 | 2009-10-22 | Samsung Electronics Co Ltd | 外部ピンを通じてワードライン電圧を出力する半導体メモリ装置及びその電圧測定方法 |
| KR100638461B1 (ko) * | 2004-12-30 | 2006-10-24 | 매그나칩 반도체 유한회사 | 플래시 메모리에서의 전하 펌핑 장치 및 방법 |
| JP2017174485A (ja) * | 2016-03-25 | 2017-09-28 | ローム株式会社 | 半導体記憶装置 |
| JP2022173138A (ja) * | 2021-05-06 | 2022-11-17 | インフィニオン テクノロジーズ アクチエンゲゼルシャフト | 電源・デジタル制御ループ |
| JP7392032B2 (ja) | 2021-05-06 | 2023-12-05 | インフィニオン テクノロジーズ アクチエンゲゼルシャフト | 電源・デジタル制御ループ |
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