JP2004006806A - 有機半導体素子およびｒｆ変調回路およびｉｃカード - Google Patents

有機半導体素子およびｒｆ変調回路およびｉｃカード Download PDF

Info

Publication number
JP2004006806A
JP2004006806A JP2003109027A JP2003109027A JP2004006806A JP 2004006806 A JP2004006806 A JP 2004006806A JP 2003109027 A JP2003109027 A JP 2003109027A JP 2003109027 A JP2003109027 A JP 2003109027A JP 2004006806 A JP2004006806 A JP 2004006806A
Authority
JP
Japan
Prior art keywords
organic semiconductor
electrode
semiconductor layer
semiconductor element
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003109027A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004006806A5 (enExample
Inventor
Masahiko Hirai
平井　匡彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003109027A priority Critical patent/JP2004006806A/ja
Publication of JP2004006806A publication Critical patent/JP2004006806A/ja
Publication of JP2004006806A5 publication Critical patent/JP2004006806A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2003109027A 2002-04-26 2003-04-14 有機半導体素子およびｒｆ変調回路およびｉｃカード Pending JP2004006806A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003109027A JP2004006806A (ja) 2002-04-26 2003-04-14 有機半導体素子およびｒｆ変調回路およびｉｃカード

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002126164 2002-04-26
JP2003109027A JP2004006806A (ja) 2002-04-26 2003-04-14 有機半導体素子およびｒｆ変調回路およびｉｃカード

Publications (2)

Publication Number Publication Date
JP2004006806A true JP2004006806A (ja) 2004-01-08
JP2004006806A5 JP2004006806A5 (enExample) 2006-05-25

Family

ID=30447509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003109027A Pending JP2004006806A (ja) 2002-04-26 2003-04-14 有機半導体素子およびｒｆ変調回路およびｉｃカード

Country Status (1)

Country Link
JP (1) JP2004006806A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146464A (ja) * 1986-07-10 1988-06-18 Canon Inc 半導体素子
JPS6425563A (en) * 1987-07-22 1989-01-27 Hitachi Ltd Semiconductor device
JP2001298180A (ja) * 2000-03-16 2001-10-26 Trw Inc 片持ちベースを有する超高速ヘテロ接合バイポーラ・トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146464A (ja) * 1986-07-10 1988-06-18 Canon Inc 半導体素子
JPS6425563A (en) * 1987-07-22 1989-01-27 Hitachi Ltd Semiconductor device
JP2001298180A (ja) * 2000-03-16 2001-10-26 Trw Inc 片持ちベースを有する超高速ヘテロ接合バイポーラ・トランジスタ

Similar Documents

Publication Publication Date Title
JP4358430B2 (ja) 集積回路デバイスの製造方法
TWI515878B (zh) 絕緣體上半導體結構、自絕緣體上半導體主動元件之通道去除無用積聚多數型載子之方法、及製造積體電路之方法
Gelinck et al. High-performance all-polymer integrated circuits
CN106920868B (zh) 发光装置与其制作方法
JP4269134B2 (ja) 有機半導体装置
JP2006507692A5 (enExample)
CN113287028B (zh) 电子基板及其制作方法、显示面板
JP2010524217A (ja) 有機薄膜トランジスタ
TWI678738B (zh) 微電子裝置及其形成方法
CN103151460B (zh) 晶体管、显示装置和电子设备
KR20020088356A (ko) 짧은 채널을 갖는 유기 반도체 소자
CN102376892A (zh) 半导体装置、显示装置和电子设备
JP2004235624A (ja) ヘテロ接合型半導体電界効果トランジスタ及びその製造方法
US9876066B2 (en) Device and structure and method for forming the same
US7115898B2 (en) Organic semiconductor device, RF modulation circuit, and IC card
CN100463248C (zh) 有机发光显示器的制造方法和通过该方法制造的显示器
CN101978523A (zh) 制造顶栅有机半导体晶体管的方法
JP2004006806A (ja) 有機半導体素子およびｒｆ変調回路およびｉｃカード
JPS58170065A (ja) 薄膜電界効果トランジスタの製造方法
JP2007073856A (ja) 導電性パターンの形成方法、半導体装置の製造方法、および有機電界発光素子の製造方法
CN102884647B (zh) 具有不连续的半导体部分的微电子装置及制作这种装置的方法
WO2005122233A1 (ja) ショットキーゲート有機電界効果トランジスタおよびその製造方法
KR100751360B1 (ko) 유기 박막 트랜지스터의 제조 방법, 이로부터 제조된 유기박막 트랜지스터 및 이를 포함하는 평판 표시 장치
CN116013935B (zh) 显示面板及其制作方法
JPWO2010116768A1 (ja) 有機薄膜トランジスタ及び半導体集積回路

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060403

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060403

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100201

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100615

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20100630

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101116