JP2003536239A - 金属酸化物セラミックからの移動性種の減少した拡散 - Google Patents
金属酸化物セラミックからの移動性種の減少した拡散Info
- Publication number
- JP2003536239A JP2003536239A JP2000590226A JP2000590226A JP2003536239A JP 2003536239 A JP2003536239 A JP 2003536239A JP 2000590226 A JP2000590226 A JP 2000590226A JP 2000590226 A JP2000590226 A JP 2000590226A JP 2003536239 A JP2003536239 A JP 2003536239A
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- metal oxide
- semiconductor device
- mobile species
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 119
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 119
- 239000011224 oxide ceramic Substances 0.000 title claims abstract description 114
- 238000009792 diffusion process Methods 0.000 title claims abstract description 49
- 230000004888 barrier function Effects 0.000 claims abstract description 134
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 230000005012 migration Effects 0.000 claims description 7
- 238000013508 migration Methods 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- -1 transition metal nitride Chemical class 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 230000009257 reactivity Effects 0.000 claims description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 241000894007 species Species 0.000 description 55
- 239000010936 titanium Substances 0.000 description 33
- 239000000203 mixture Substances 0.000 description 18
- 208000029523 Interstitial Lung disease Diseases 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 13
- 239000002243 precursor Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052797 bismuth Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000909 Lead-bismuth eutectic Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- 101000831940 Homo sapiens Stathmin Proteins 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100024237 Stathmin Human genes 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 208000036971 interstitial lung disease 2 Diseases 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/216,372 US6693318B1 (en) | 1997-12-18 | 1998-12-18 | Reduced diffusion of a mobile specie from a metal oxide ceramic |
| US09/216,372 | 1998-12-18 | ||
| PCT/IB1999/002028 WO2000038247A1 (en) | 1998-12-18 | 1999-12-08 | Reduced diffusion of a mobile specie from a metal oxide ceramic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003536239A true JP2003536239A (ja) | 2003-12-02 |
Family
ID=22806796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000590226A Withdrawn JP2003536239A (ja) | 1998-12-18 | 1999-12-08 | 金属酸化物セラミックからの移動性種の減少した拡散 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1142027A1 (zh) |
| JP (1) | JP2003536239A (zh) |
| KR (1) | KR20010086116A (zh) |
| CN (1) | CN1199287C (zh) |
| TW (1) | TW478176B (zh) |
| WO (1) | WO2000038247A1 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284548A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| WO2005122260A1 (ja) * | 2004-06-11 | 2005-12-22 | Fujitsu Limited | 容量素子、集積回路および電子装置 |
| JP2016044350A (ja) * | 2014-08-26 | 2016-04-04 | 国立研究開発法人物質・材料研究機構 | 誘電体薄膜 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100399074B1 (ko) | 2001-04-27 | 2003-09-26 | 주식회사 하이닉스반도체 | 비엘티 강유전체막을 구비하는 강유전체 메모리 소자 제조방법 |
| JP2003017661A (ja) * | 2001-06-29 | 2003-01-17 | Sony Corp | 半導体装置及びその製造方法 |
| US6818935B2 (en) * | 2001-09-12 | 2004-11-16 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
| KR20030028044A (ko) * | 2001-09-27 | 2003-04-08 | 삼성전자주식회사 | 강유전체 메모리 소자 및 그 제조방법 |
| JP4693411B2 (ja) | 2002-10-30 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8134865B2 (en) * | 2008-05-06 | 2012-03-13 | Macronix International Co., Ltd. | Operating method of electrical pulse voltage for RRAM application |
| CN104992777B (zh) * | 2015-05-28 | 2017-05-24 | 苏州新材料研究所有限公司 | 一种双轴织构缓冲层结构 |
| CN108018525B (zh) * | 2016-11-01 | 2020-01-17 | 中国科学院上海硅酸盐研究所 | 一种Bi9Ti3Fe5O27层状多铁外延薄膜及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
| US5541807A (en) * | 1995-03-17 | 1996-07-30 | Evans, Jr.; Joseph T. | Ferroelectric based capacitor for use in memory systems and method for fabricating the same |
| JP3319928B2 (ja) * | 1995-12-13 | 2002-09-03 | シャープ株式会社 | 半導体メモリ素子の製造方法 |
| DE19640246A1 (de) * | 1996-09-30 | 1998-04-02 | Siemens Ag | Halbleiteranordnung mit geschützter Barriere für eine Stapelzelle |
-
1999
- 1999-12-08 KR KR1020017007678A patent/KR20010086116A/ko not_active Application Discontinuation
- 1999-12-08 WO PCT/IB1999/002028 patent/WO2000038247A1/en not_active Application Discontinuation
- 1999-12-08 CN CNB998146153A patent/CN1199287C/zh not_active Expired - Fee Related
- 1999-12-08 JP JP2000590226A patent/JP2003536239A/ja not_active Withdrawn
- 1999-12-08 EP EP99958444A patent/EP1142027A1/en not_active Withdrawn
- 1999-12-15 TW TW088122022A patent/TW478176B/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001284548A (ja) * | 2000-03-31 | 2001-10-12 | Fujitsu Ltd | 半導体記憶装置及びその製造方法 |
| WO2005122260A1 (ja) * | 2004-06-11 | 2005-12-22 | Fujitsu Limited | 容量素子、集積回路および電子装置 |
| JP2016044350A (ja) * | 2014-08-26 | 2016-04-04 | 国立研究開発法人物質・材料研究機構 | 誘電体薄膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW478176B (en) | 2002-03-01 |
| WO2000038247A1 (en) | 2000-06-29 |
| KR20010086116A (ko) | 2001-09-07 |
| CN1199287C (zh) | 2005-04-27 |
| EP1142027A1 (en) | 2001-10-10 |
| CN1330798A (zh) | 2002-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20070306 |