JP2003529207A - 半導体にコンタクトを自己ドーピングするための方法および装置 - Google Patents

半導体にコンタクトを自己ドーピングするための方法および装置

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Publication number
JP2003529207A
JP2003529207A JP2001542393A JP2001542393A JP2003529207A JP 2003529207 A JP2003529207 A JP 2003529207A JP 2001542393 A JP2001542393 A JP 2001542393A JP 2001542393 A JP2001542393 A JP 2001542393A JP 2003529207 A JP2003529207 A JP 2003529207A
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JP
Japan
Prior art keywords
dopant
semiconductor
temperature
silver
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001542393A
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English (en)
Japanese (ja)
Other versions
JP2003529207A5 (OSRAM
Inventor
メイエール，ダニエル・エル
デイヴィス，フバート・ピイ
ガルシア，ルース・エイ
ジェサップ，ジョイス・エイ
Original Assignee
エバラ・ソーラー・インコーポレーテッド
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Publication date
Application filed by エバラ・ソーラー・インコーポレーテッド filed Critical エバラ・ソーラー・インコーポレーテッド
Publication of JP2003529207A publication Critical patent/JP2003529207A/ja
Publication of JP2003529207A5 publication Critical patent/JP2003529207A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
JP2001542393A 1999-11-23 2000-11-22 半導体にコンタクトを自己ドーピングするための方法および装置 Pending JP2003529207A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16735899P 1999-11-23 1999-11-23
US60/167,358 1999-11-23
US09/538,034 US6632730B1 (en) 1999-11-23 2000-03-29 Method for self-doping contacts to a semiconductor
US09/538,034 2000-03-29
PCT/US2000/032257 WO2001041221A1 (en) 1999-11-23 2000-11-22 Method and apparatus for self-doping contacts to a semiconductor

Publications (2)

Publication Number Publication Date
JP2003529207A true JP2003529207A (ja) 2003-09-30
JP2003529207A5 JP2003529207A5 (OSRAM) 2005-12-22

Family

ID=26863088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001542393A Pending JP2003529207A (ja) 1999-11-23 2000-11-22 半導体にコンタクトを自己ドーピングするための方法および装置

Country Status (10)

Country Link
US (4) US6632730B1 (OSRAM)
EP (1) EP1234342A1 (OSRAM)
JP (1) JP2003529207A (OSRAM)
KR (1) KR20020066327A (OSRAM)
CN (1) CN1260830C (OSRAM)
AU (1) AU780960B2 (OSRAM)
BR (1) BR0015803A (OSRAM)
CA (1) CA2392342C (OSRAM)
MX (1) MXPA02005186A (OSRAM)
WO (1) WO2001041221A1 (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008513976A (ja) * 2004-09-15 2008-05-01 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー 半導体層の再結晶化及びドーピングを同時に行うための方法並びにこの方法によって製造される半導体層構造
JPWO2008078771A1 (ja) * 2006-12-26 2010-04-30 京セラ株式会社 太陽電池素子及び太陽電池素子の製造方法
WO2012077567A1 (ja) * 2010-12-06 2012-06-14 信越化学工業株式会社 太陽電池及び太陽電池モジュール
US9224888B2 (en) 2010-12-06 2015-12-29 Shin-Etsu Chemical Co., Ltd. Solar cell and solar-cell module

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JP2008513976A (ja) * 2004-09-15 2008-05-01 フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー 半導体層の再結晶化及びドーピングを同時に行うための方法並びにこの方法によって製造される半導体層構造
JPWO2008078771A1 (ja) * 2006-12-26 2010-04-30 京セラ株式会社 太陽電池素子及び太陽電池素子の製造方法
US9093590B2 (en) 2006-12-26 2015-07-28 Kyocera Corporation Solar cell and solar cell manufacturing method
WO2012077567A1 (ja) * 2010-12-06 2012-06-14 信越化学工業株式会社 太陽電池及び太陽電池モジュール
US9224888B2 (en) 2010-12-06 2015-12-29 Shin-Etsu Chemical Co., Ltd. Solar cell and solar-cell module
US9887312B2 (en) 2010-12-06 2018-02-06 Shin-Etsu Chemical Co., Ltd. Solar cell and solar-cell module

Also Published As

Publication number Publication date
CA2392342C (en) 2011-01-04
AU780960B2 (en) 2005-04-28
CN1415119A (zh) 2003-04-30
CA2392342A1 (en) 2001-06-07
US6664631B2 (en) 2003-12-16
CN1260830C (zh) 2006-06-21
BR0015803A (pt) 2002-08-13
KR20020066327A (ko) 2002-08-14
WO2001041221A1 (en) 2001-06-07
US20030008485A1 (en) 2003-01-09
AU1798301A (en) 2001-06-12
US20030003693A1 (en) 2003-01-02
US6737340B2 (en) 2004-05-18
MXPA02005186A (es) 2004-05-05
US6703295B2 (en) 2004-03-09
EP1234342A1 (en) 2002-08-28
US20030203603A1 (en) 2003-10-30
US6632730B1 (en) 2003-10-14

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