JP2003528737A5 - - Google Patents
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- Publication number
- JP2003528737A5 JP2003528737A5 JP2001545230A JP2001545230A JP2003528737A5 JP 2003528737 A5 JP2003528737 A5 JP 2003528737A5 JP 2001545230 A JP2001545230 A JP 2001545230A JP 2001545230 A JP2001545230 A JP 2001545230A JP 2003528737 A5 JP2003528737 A5 JP 2003528737A5
- Authority
- JP
- Japan
- Prior art keywords
- product
- components
- nanomaterial
- bonded product
- animal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 description 24
- 239000002086 nanomaterial Substances 0.000 description 12
- 229910021426 porous silicon Inorganic materials 0.000 description 12
- 241001465754 Metazoa Species 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000001124 body fluid Anatomy 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000825 pharmaceutical preparation Substances 0.000 description 2
- 229940127557 pharmaceutical product Drugs 0.000 description 2
- 239000000829 suppository Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9929521.4 | 1999-12-15 | ||
| GBGB9929521.4A GB9929521D0 (en) | 1999-12-15 | 1999-12-15 | Bonded products and methods of fabrication therefor |
| PCT/GB2000/004552 WO2001044140A1 (en) | 1999-12-15 | 2000-11-30 | Bonded products and methods of fabrication therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003528737A JP2003528737A (ja) | 2003-09-30 |
| JP2003528737A5 true JP2003528737A5 (enExample) | 2008-01-31 |
Family
ID=10866282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001545230A Pending JP2003528737A (ja) | 1999-12-15 | 2000-11-30 | 接合製品およびその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6832716B2 (enExample) |
| EP (1) | EP1242334A1 (enExample) |
| JP (1) | JP2003528737A (enExample) |
| AU (1) | AU773042B2 (enExample) |
| CA (1) | CA2394136C (enExample) |
| GB (1) | GB9929521D0 (enExample) |
| WO (1) | WO2001044140A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717212B2 (en) * | 2001-06-12 | 2004-04-06 | Advanced Micro Devices, Inc. | Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
| US7083694B2 (en) * | 2003-04-23 | 2006-08-01 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite particularly useful for joining silicon parts |
| JP2005183903A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | 電子デバイスおよび電子デバイスを形成する方法 |
| JP2005183904A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | 電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品 |
| WO2006121870A2 (en) | 2005-05-09 | 2006-11-16 | Vesta Research, Ltd. | Silicon nanosponge particles |
| WO2006124625A2 (en) * | 2005-05-12 | 2006-11-23 | Nanosys, Inc. | Use of nanoparticles in film formation and as solder |
| GB0515357D0 (en) * | 2005-07-27 | 2005-08-31 | Psimedica Ltd | Silicon package material |
| US20080003778A1 (en) * | 2006-06-13 | 2008-01-03 | Rensselaer Polytechnic Institute | Low-temperature welding with nano structures |
| JP5621262B2 (ja) * | 2010-01-12 | 2014-11-12 | 大日本印刷株式会社 | Ｍｅｍｓデバイスの製造方法 |
| US8940616B2 (en) | 2012-07-27 | 2015-01-27 | Globalfoundries Singapore Pte. Ltd. | Bonding method using porosified surfaces for making stacked structures |
| CN104409343A (zh) * | 2014-12-03 | 2015-03-11 | 复旦大学 | 一种具有光学边缘的氮化硅隔膜的制备方法 |
| US12309537B2 (en) * | 2022-09-30 | 2025-05-20 | Huawei Technologies Co., Ltd. | Assemblies and methods for managing spectral hole burning |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121112A (en) * | 1905-08-29 | 2000-09-19 | Canon Kabushiki Kaisha | Fabrication method for semiconductor substrate |
| GB8927709D0 (en) | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
| DE4018715A1 (de) * | 1990-06-12 | 1991-12-19 | Bayer Ag | Verfahren zur herstellung von metall- und/oder keramik-verbund-teilen |
| JPH06232236A (ja) * | 1991-08-20 | 1994-08-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE69333152T2 (de) * | 1992-01-30 | 2004-05-27 | Canon K.K. | Verfahren zur Herstellung eines Halbleitersubstrates |
| JP3191972B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
| JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
| DE4317174A1 (de) | 1993-05-22 | 1994-11-24 | Bosch Gmbh Robert | Verbundsystem mit mindestens zwei anorganischen keramischen Schichten und Verfahren zu deren Herstellung |
| DE4342527A1 (de) * | 1993-12-15 | 1995-06-22 | Forschungszentrum Juelich Gmbh | Verfahren zum elektrischen Kontaktieren von porösem Silizium |
| JPH07187836A (ja) * | 1993-12-24 | 1995-07-25 | Toshiba Ceramics Co Ltd | レーザ光によるＳｉ含有セラミックスの接合方法 |
| JPH10505538A (ja) | 1994-08-25 | 1998-06-02 | キューキューシー，インコーポレイテッド | ナノ規模の粒子およびその用途 |
| DE19621144A1 (de) * | 1995-05-19 | 1996-11-21 | Hahn Meitner Inst Berlin Gmbh | Halbleiterbauelement auf der Basis von Silizium mit einer porösen Schicht und Verfahren für die Herstellung poröser Siliziumschichten |
| GB2337255B (en) | 1995-08-03 | 2000-03-15 | Secr Defence | Biomaterial |
| GB9611437D0 (en) | 1995-08-03 | 1996-08-07 | Secr Defence | Biomaterial |
| US6017773A (en) * | 1997-04-04 | 2000-01-25 | University Of Rochester | Stabilizing process for porous silicon and resulting light emitting device |
| US6064149A (en) * | 1998-02-23 | 2000-05-16 | Micron Technology Inc. | Field emission device with silicon-containing adhesion layer |
| KR100348513B1 (ko) * | 1998-09-04 | 2002-08-13 | 캐논 가부시끼가이샤 | 반도체기판의 제작방법 |
| CN1160186C (zh) * | 1999-06-03 | 2004-08-04 | 宾夕法尼亚州研究基金会 | 纳米尺度的组合物、复合结构、其制造和应用 |
-
1999
- 1999-12-15 GB GBGB9929521.4A patent/GB9929521D0/en not_active Ceased
-
2000
- 2000-11-30 EP EP00979784A patent/EP1242334A1/en not_active Withdrawn
- 2000-11-30 JP JP2001545230A patent/JP2003528737A/ja active Pending
- 2000-11-30 WO PCT/GB2000/004552 patent/WO2001044140A1/en not_active Ceased
- 2000-11-30 CA CA002394136A patent/CA2394136C/en not_active Expired - Fee Related
- 2000-11-30 US US10/168,146 patent/US6832716B2/en not_active Expired - Lifetime
- 2000-11-30 AU AU17172/01A patent/AU773042B2/en not_active Ceased
-
2004
- 2004-11-02 US US10/978,479 patent/US7029986B2/en not_active Expired - Lifetime
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