CA2394136C - Bonded products and methods of fabrication therefor - Google Patents
Bonded products and methods of fabrication therefor Download PDFInfo
- Publication number
- CA2394136C CA2394136C CA002394136A CA2394136A CA2394136C CA 2394136 C CA2394136 C CA 2394136C CA 002394136 A CA002394136 A CA 002394136A CA 2394136 A CA2394136 A CA 2394136A CA 2394136 C CA2394136 C CA 2394136C
- Authority
- CA
- Canada
- Prior art keywords
- components
- silicon
- bonded
- nanomaterial
- porous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000002086 nanomaterial Substances 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 229910021426 porous silicon Inorganic materials 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 241001465754 Metazoa Species 0.000 claims description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 210000001124 body fluid Anatomy 0.000 claims description 7
- 239000010839 body fluid Substances 0.000 claims description 7
- 239000000825 pharmaceutical preparation Substances 0.000 claims description 6
- 229940127557 pharmaceutical product Drugs 0.000 claims description 6
- 239000002159 nanocrystal Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000829 suppository Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
- 239000000463 material Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 20
- 238000003466 welding Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 239000003814 drug Substances 0.000 description 9
- 229940079593 drug Drugs 0.000 description 9
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000012634 fragment Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000002707 nanocrystalline material Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012377 drug delivery Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000560 biocompatible material Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 210000003027 ear inner Anatomy 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 210000001640 nerve ending Anatomy 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 239000000541 tocopherol-rich extract Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/032—Gluing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/16—Silicon interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/55—Pre-treatments of a coated or not coated substrate other than oxidation treatment in order to form an active joining layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/59—Aspects relating to the structure of the interlayer
- C04B2237/597—Aspects relating to the structure of the interlayer whereby the interlayer is continuous but porous, e.g. containing hollow or porous particles, macro- or micropores or cracks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Medicinal Preparation (AREA)
- Materials For Medical Uses (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9929521.4 | 1999-12-15 | ||
| GBGB9929521.4A GB9929521D0 (en) | 1999-12-15 | 1999-12-15 | Bonded products and methods of fabrication therefor |
| PCT/GB2000/004552 WO2001044140A1 (en) | 1999-12-15 | 2000-11-30 | Bonded products and methods of fabrication therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2394136A1 CA2394136A1 (en) | 2001-06-21 |
| CA2394136C true CA2394136C (en) | 2009-02-24 |
Family
ID=10866282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002394136A Expired - Fee Related CA2394136C (en) | 1999-12-15 | 2000-11-30 | Bonded products and methods of fabrication therefor |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6832716B2 (enExample) |
| EP (1) | EP1242334A1 (enExample) |
| JP (1) | JP2003528737A (enExample) |
| AU (1) | AU773042B2 (enExample) |
| CA (1) | CA2394136C (enExample) |
| GB (1) | GB9929521D0 (enExample) |
| WO (1) | WO2001044140A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717212B2 (en) * | 2001-06-12 | 2004-04-06 | Advanced Micro Devices, Inc. | Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure |
| US7083694B2 (en) * | 2003-04-23 | 2006-08-01 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite particularly useful for joining silicon parts |
| JP2005183903A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | 電子デバイスおよび電子デバイスを形成する方法 |
| JP2005183904A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | 電子部品にはんだ領域を形成する方法及びはんだ領域を有する電子部品 |
| WO2006121870A2 (en) | 2005-05-09 | 2006-11-16 | Vesta Research, Ltd. | Silicon nanosponge particles |
| WO2006124625A2 (en) * | 2005-05-12 | 2006-11-23 | Nanosys, Inc. | Use of nanoparticles in film formation and as solder |
| GB0515357D0 (en) * | 2005-07-27 | 2005-08-31 | Psimedica Ltd | Silicon package material |
| US20080003778A1 (en) * | 2006-06-13 | 2008-01-03 | Rensselaer Polytechnic Institute | Low-temperature welding with nano structures |
| JP5621262B2 (ja) * | 2010-01-12 | 2014-11-12 | 大日本印刷株式会社 | Ｍｅｍｓデバイスの製造方法 |
| US8940616B2 (en) | 2012-07-27 | 2015-01-27 | Globalfoundries Singapore Pte. Ltd. | Bonding method using porosified surfaces for making stacked structures |
| CN104409343A (zh) * | 2014-12-03 | 2015-03-11 | 复旦大学 | 一种具有光学边缘的氮化硅隔膜的制备方法 |
| US12309537B2 (en) * | 2022-09-30 | 2025-05-20 | Huawei Technologies Co., Ltd. | Assemblies and methods for managing spectral hole burning |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121112A (en) * | 1905-08-29 | 2000-09-19 | Canon Kabushiki Kaisha | Fabrication method for semiconductor substrate |
| GB8927709D0 (en) | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
| DE4018715A1 (de) * | 1990-06-12 | 1991-12-19 | Bayer Ag | Verfahren zur herstellung von metall- und/oder keramik-verbund-teilen |
| JPH06232236A (ja) * | 1991-08-20 | 1994-08-19 | Fujitsu Ltd | 半導体装置の製造方法 |
| DE69333152T2 (de) * | 1992-01-30 | 2004-05-27 | Canon K.K. | Verfahren zur Herstellung eines Halbleitersubstrates |
| JP3191972B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
| JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
| DE4317174A1 (de) | 1993-05-22 | 1994-11-24 | Bosch Gmbh Robert | Verbundsystem mit mindestens zwei anorganischen keramischen Schichten und Verfahren zu deren Herstellung |
| DE4342527A1 (de) * | 1993-12-15 | 1995-06-22 | Forschungszentrum Juelich Gmbh | Verfahren zum elektrischen Kontaktieren von porösem Silizium |
| JPH07187836A (ja) * | 1993-12-24 | 1995-07-25 | Toshiba Ceramics Co Ltd | レーザ光によるＳｉ含有セラミックスの接合方法 |
| JPH10505538A (ja) | 1994-08-25 | 1998-06-02 | キューキューシー，インコーポレイテッド | ナノ規模の粒子およびその用途 |
| DE19621144A1 (de) * | 1995-05-19 | 1996-11-21 | Hahn Meitner Inst Berlin Gmbh | Halbleiterbauelement auf der Basis von Silizium mit einer porösen Schicht und Verfahren für die Herstellung poröser Siliziumschichten |
| GB2337255B (en) | 1995-08-03 | 2000-03-15 | Secr Defence | Biomaterial |
| GB9611437D0 (en) | 1995-08-03 | 1996-08-07 | Secr Defence | Biomaterial |
| US6017773A (en) * | 1997-04-04 | 2000-01-25 | University Of Rochester | Stabilizing process for porous silicon and resulting light emitting device |
| US6064149A (en) * | 1998-02-23 | 2000-05-16 | Micron Technology Inc. | Field emission device with silicon-containing adhesion layer |
| KR100348513B1 (ko) * | 1998-09-04 | 2002-08-13 | 캐논 가부시끼가이샤 | 반도체기판의 제작방법 |
| CN1160186C (zh) * | 1999-06-03 | 2004-08-04 | 宾夕法尼亚州研究基金会 | 纳米尺度的组合物、复合结构、其制造和应用 |
-
1999
- 1999-12-15 GB GBGB9929521.4A patent/GB9929521D0/en not_active Ceased
-
2000
- 2000-11-30 EP EP00979784A patent/EP1242334A1/en not_active Withdrawn
- 2000-11-30 JP JP2001545230A patent/JP2003528737A/ja active Pending
- 2000-11-30 WO PCT/GB2000/004552 patent/WO2001044140A1/en not_active Ceased
- 2000-11-30 CA CA002394136A patent/CA2394136C/en not_active Expired - Fee Related
- 2000-11-30 US US10/168,146 patent/US6832716B2/en not_active Expired - Lifetime
- 2000-11-30 AU AU17172/01A patent/AU773042B2/en not_active Ceased
-
2004
- 2004-11-02 US US10/978,479 patent/US7029986B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1242334A1 (en) | 2002-09-25 |
| US20050116247A1 (en) | 2005-06-02 |
| CA2394136A1 (en) | 2001-06-21 |
| WO2001044140A1 (en) | 2001-06-21 |
| JP2003528737A (ja) | 2003-09-30 |
| US7029986B2 (en) | 2006-04-18 |
| AU1717201A (en) | 2001-06-25 |
| US20030040180A1 (en) | 2003-02-27 |
| GB9929521D0 (en) | 2000-02-09 |
| AU773042B2 (en) | 2004-05-13 |
| US6832716B2 (en) | 2004-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20191202 |