JP2003528443A - バイポーラトランジスタの層状構造体およびその製造法 - Google Patents

バイポーラトランジスタの層状構造体およびその製造法

Info

Publication number
JP2003528443A
JP2003528443A JP2001520454A JP2001520454A JP2003528443A JP 2003528443 A JP2003528443 A JP 2003528443A JP 2001520454 A JP2001520454 A JP 2001520454A JP 2001520454 A JP2001520454 A JP 2001520454A JP 2003528443 A JP2003528443 A JP 2003528443A
Authority
JP
Japan
Prior art keywords
layer
emitter layer
partially
layered structure
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001520454A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003528443A5 (enExample
Inventor
クリューガー ディートマー
モルゲンシュテルン トーマス
エーヴァルト カール−エルンスト
ブギール エーベルハルト
ハイネマン ベルント
クノル ディーター
ティラック ベルント
Original Assignee
イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス／インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス／インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク filed Critical イーハーペー ゲーエムベーハー−イノヴェイションズ フォー ハイ パフォーマンス マイクロエレクトロニクス／インスティチュート フュア イノヴァティーヴェ ミクロエレクトローニク
Publication of JP2003528443A publication Critical patent/JP2003528443A/ja
Publication of JP2003528443A5 publication Critical patent/JP2003528443A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
JP2001520454A 1999-08-26 2000-07-28 バイポーラトランジスタの層状構造体およびその製造法 Pending JP2003528443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19940278.7 1999-08-26
DE19940278A DE19940278A1 (de) 1999-08-26 1999-08-26 Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung
PCT/DE2000/002491 WO2001017002A1 (de) 1999-08-26 2000-07-28 Schichtstruktur für bipolare transistoren und verfahren zu deren herstellung

Publications (2)

Publication Number Publication Date
JP2003528443A true JP2003528443A (ja) 2003-09-24
JP2003528443A5 JP2003528443A5 (enExample) 2004-12-24

Family

ID=7919533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001520454A Pending JP2003528443A (ja) 1999-08-26 2000-07-28 バイポーラトランジスタの層状構造体およびその製造法

Country Status (4)

Country Link
EP (1) EP1212786B1 (enExample)
JP (1) JP2003528443A (enExample)
DE (1) DE19940278A1 (enExample)
WO (1) WO2001017002A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10160511A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Bipolarer Transistor
DE10220578A1 (de) * 2002-05-08 2003-11-27 Infineon Technologies Ag Bipolartransistor
DE10317098A1 (de) 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
JP7713380B2 (ja) * 2021-12-17 2025-07-25 一般財団法人電力中央研究所 炭化珪素インゴット

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640275A (en) * 1979-09-12 1981-04-16 Hitachi Ltd Preparation of semiconductor device
JPS59186367A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
JPH02154429A (ja) * 1988-12-06 1990-06-13 Fujitsu Ltd 半導体装置
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
EP0543759A3 (en) * 1991-11-20 1993-10-06 International Business Machines Corporation A poly-emitter structure with improved interface control
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
US5285083A (en) * 1992-04-27 1994-02-08 The University Of British Columbia Inverted heterojunction bipolar device having undoped amorphous silicon layer
DE4301333C2 (de) * 1993-01-20 2003-05-15 Daimler Chrysler Ag Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
JP2626535B2 (ja) * 1993-12-28 1997-07-02 日本電気株式会社 半導体装置
US5659197A (en) * 1994-09-23 1997-08-19 Vlsi Technology, Inc. Hot-carrier shield formation for bipolar transistor
JP3062065B2 (ja) * 1995-10-20 2000-07-10 日本電気株式会社 半導体装置の製造方法
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor

Also Published As

Publication number Publication date
EP1212786B1 (de) 2012-09-26
WO2001017002A1 (de) 2001-03-08
DE19940278A1 (de) 2001-03-08
EP1212786A1 (de) 2002-06-12

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