DE19940278A1 - Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung - Google Patents

Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung

Info

Publication number
DE19940278A1
DE19940278A1 DE19940278A DE19940278A DE19940278A1 DE 19940278 A1 DE19940278 A1 DE 19940278A1 DE 19940278 A DE19940278 A DE 19940278A DE 19940278 A DE19940278 A DE 19940278A DE 19940278 A1 DE19940278 A1 DE 19940278A1
Authority
DE
Germany
Prior art keywords
layer
emitter layer
emitter
partially monocrystalline
partially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19940278A
Other languages
German (de)
English (en)
Inventor
Dietmar Krueger
Thomas Morgenstern
Karl-Ernst Ehwald
Eberhard Bugiel
Bernd Heinemann
Dieter Knoll
Bernd Tillack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IHP GmbH
Original Assignee
Institut fuer Halbleiterphysik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut fuer Halbleiterphysik GmbH filed Critical Institut fuer Halbleiterphysik GmbH
Priority to DE19940278A priority Critical patent/DE19940278A1/de
Priority to PCT/DE2000/002491 priority patent/WO2001017002A1/de
Priority to JP2001520454A priority patent/JP2003528443A/ja
Priority to EP00958187A priority patent/EP1212786B1/de
Publication of DE19940278A1 publication Critical patent/DE19940278A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
DE19940278A 1999-08-26 1999-08-26 Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung Withdrawn DE19940278A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19940278A DE19940278A1 (de) 1999-08-26 1999-08-26 Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung
PCT/DE2000/002491 WO2001017002A1 (de) 1999-08-26 2000-07-28 Schichtstruktur für bipolare transistoren und verfahren zu deren herstellung
JP2001520454A JP2003528443A (ja) 1999-08-26 2000-07-28 バイポーラトランジスタの層状構造体およびその製造法
EP00958187A EP1212786B1 (de) 1999-08-26 2000-07-28 Schichtstruktur für bipolare transistoren und verfahren zu deren herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19940278A DE19940278A1 (de) 1999-08-26 1999-08-26 Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
DE19940278A1 true DE19940278A1 (de) 2001-03-08

Family

ID=7919533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19940278A Withdrawn DE19940278A1 (de) 1999-08-26 1999-08-26 Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung

Country Status (4)

Country Link
EP (1) EP1212786B1 (enExample)
JP (1) JP2003528443A (enExample)
DE (1) DE19940278A1 (enExample)
WO (1) WO2001017002A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10160511A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Bipolarer Transistor
DE10220578A1 (de) * 2002-05-08 2003-11-27 Infineon Technologies Ag Bipolartransistor
WO2004090968A1 (de) 2003-04-14 2004-10-21 Infineon Technologies Ag Verfahren zur herstellung eines bipolartransistors

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7713380B2 (ja) * 2021-12-17 2025-07-25 一般財団法人電力中央研究所 炭化珪素インゴット

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3034078C2 (de) * 1979-09-12 1985-09-19 Hitachi, Ltd., Tokio/Tokyo Verfahren zur Herstellung einer Halbleiteranordnung
WO1988008206A1 (en) * 1987-04-14 1988-10-20 British Telecommunications Public Limited Company Heterojunction bipolar transistor
EP0374544A1 (en) * 1988-12-06 1990-06-27 Fujitsu Limited A hetero bipolar transistor and a fabricating method thereof
US5144398A (en) * 1989-03-29 1992-09-01 Canon Kabushiki Kaisha Semiconductor device and photoelectric conversion apparatus using the same
US5285083A (en) * 1992-04-27 1994-02-08 The University Of British Columbia Inverted heterojunction bipolar device having undoped amorphous silicon layer
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
EP0607836A2 (de) * 1993-01-20 1994-07-27 TEMIC TELEFUNKEN microelectronic GmbH Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
US5374481A (en) * 1991-11-20 1994-12-20 International Business Machines Corporation Polyemitter structure with improved interface control
US5500554A (en) * 1993-12-28 1996-03-19 Nec Corporation Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency
EP0769810A2 (en) * 1995-10-20 1997-04-23 Nec Corporation Bipolar transistor and method of fabricating it
US5659197A (en) * 1994-09-23 1997-08-19 Vlsi Technology, Inc. Hot-carrier shield formation for bipolar transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186367A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3034078C2 (de) * 1979-09-12 1985-09-19 Hitachi, Ltd., Tokio/Tokyo Verfahren zur Herstellung einer Halbleiteranordnung
WO1988008206A1 (en) * 1987-04-14 1988-10-20 British Telecommunications Public Limited Company Heterojunction bipolar transistor
EP0374544A1 (en) * 1988-12-06 1990-06-27 Fujitsu Limited A hetero bipolar transistor and a fabricating method thereof
US5144398A (en) * 1989-03-29 1992-09-01 Canon Kabushiki Kaisha Semiconductor device and photoelectric conversion apparatus using the same
US5374481A (en) * 1991-11-20 1994-12-20 International Business Machines Corporation Polyemitter structure with improved interface control
US5321301A (en) * 1992-04-08 1994-06-14 Nec Corporation Semiconductor device
US5285083A (en) * 1992-04-27 1994-02-08 The University Of British Columbia Inverted heterojunction bipolar device having undoped amorphous silicon layer
EP0607836A2 (de) * 1993-01-20 1994-07-27 TEMIC TELEFUNKEN microelectronic GmbH Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
US5500554A (en) * 1993-12-28 1996-03-19 Nec Corporation Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency
US5659197A (en) * 1994-09-23 1997-08-19 Vlsi Technology, Inc. Hot-carrier shield formation for bipolar transistor
EP0769810A2 (en) * 1995-10-20 1997-04-23 Nec Corporation Bipolar transistor and method of fabricating it

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BEHAMMER,D., et.al.: Si/SiGe HBTs For Application In Low Power ICs. In: Solid-State Electronics, Vol.39, No.4, 1996, S.471-480 *
JOUAN,SEbastien, et.al.: A High-Speed Low 1/f Noise SiGe HBT Technology Using Epitaxially- Aligned Polysilicon Emitters. In: IEEE Transactions On Electron Devices, Vol.46, No.7, July 1999, S.1525-1531 *
KONDO,Masao, et.al.: Analysis of Emitter Efficiency Enhancement Induced by Residual Stress for In Situ Phosphorus-Doped Polysilicon Emitter Transistors. In: IEEE Transactions On Electron Devices, Vol.44, No.6, June 1997, S.978- *
LIPPERT,G., et.al.: Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices. In: Thin Solid Films 321, 1998, S.21-25 *
ZHENG,Jiang, et.al.: 77 K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors. In: Jpn. J. Appl. Phys., Vol.32, 1993, S.2632,2633 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10160511A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Bipolarer Transistor
DE10220578A1 (de) * 2002-05-08 2003-11-27 Infineon Technologies Ag Bipolartransistor
WO2004090968A1 (de) 2003-04-14 2004-10-21 Infineon Technologies Ag Verfahren zur herstellung eines bipolartransistors
US7105415B2 (en) 2003-04-14 2006-09-12 Infineon Technologies Ag Method for the production of a bipolar transistor

Also Published As

Publication number Publication date
JP2003528443A (ja) 2003-09-24
EP1212786A1 (de) 2002-06-12
WO2001017002A1 (de) 2001-03-08
EP1212786B1 (de) 2012-09-26

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8127 New person/name/address of the applicant

Owner name: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROE

8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MI, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140301