JP2003516691A - 可変負荷切換可能インピーダンス・マッチング・システム - Google Patents

可変負荷切換可能インピーダンス・マッチング・システム

Info

Publication number
JP2003516691A
JP2003516691A JP2001543853A JP2001543853A JP2003516691A JP 2003516691 A JP2003516691 A JP 2003516691A JP 2001543853 A JP2001543853 A JP 2001543853A JP 2001543853 A JP2001543853 A JP 2001543853A JP 2003516691 A JP2003516691 A JP 2003516691A
Authority
JP
Japan
Prior art keywords
load
impedance
coupled
magnitude
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001543853A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003516691A5 (enExample
Inventor
マヴレティック,アントン
ロヅィック,トミスラヴ
Original Assignee
アドバンスト・エナジーズ・ヴォアヒーズ・オペレーションズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アドバンスト・エナジーズ・ヴォアヒーズ・オペレーションズ filed Critical アドバンスト・エナジーズ・ヴォアヒーズ・オペレーションズ
Publication of JP2003516691A publication Critical patent/JP2003516691A/ja
Publication of JP2003516691A5 publication Critical patent/JP2003516691A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • H03H7/40Automatic matching of load impedance to source impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2001543853A 1999-11-30 2000-11-30 可変負荷切換可能インピーダンス・マッチング・システム Pending JP2003516691A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/451,512 1999-11-30
US09/451,512 US6424232B1 (en) 1999-11-30 1999-11-30 Method and apparatus for matching a variable load impedance with an RF power generator impedance
PCT/US2000/042460 WO2001043282A1 (en) 1999-11-30 2000-11-30 Variable load switchable impedance matching system

Publications (2)

Publication Number Publication Date
JP2003516691A true JP2003516691A (ja) 2003-05-13
JP2003516691A5 JP2003516691A5 (enExample) 2008-01-31

Family

ID=23792528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001543853A Pending JP2003516691A (ja) 1999-11-30 2000-11-30 可変負荷切換可能インピーダンス・マッチング・システム

Country Status (6)

Country Link
US (1) US6424232B1 (enExample)
EP (1) EP1236275B1 (enExample)
JP (1) JP2003516691A (enExample)
AU (1) AU4511501A (enExample)
DE (1) DE60044612D1 (enExample)
WO (1) WO2001043282A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009514176A (ja) * 2005-10-31 2009-04-02 エム ケー エス インストルメンツ インコーポレーテッド 無線周波数電力搬送システム
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法
KR20130086825A (ko) * 2012-01-26 2013-08-05 세메스 주식회사 가변커패시터, 임피던스매칭장치 및 기판처리장치
US20150000842A1 (en) * 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
JP2015167070A (ja) * 2014-03-03 2015-09-24 株式会社島津製作所 高周波電源装置
JP2023530361A (ja) * 2020-06-19 2023-07-14 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6924455B1 (en) 1997-06-26 2005-08-02 Applied Science & Technology, Inc. Integrated plasma chamber and inductively-coupled toroidal plasma source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6516742B1 (en) * 1998-02-26 2003-02-11 Micron Technology, Inc. Apparatus for improved low pressure inductively coupled high density plasma reactor
JP2000322023A (ja) * 1999-04-17 2000-11-24 Lg Electronics Inc 高周波プラズマディスプレーパネルの駆動回路
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
US6758612B1 (en) * 2002-01-16 2004-07-06 Advanced Micro Devices, Inc. System and method for developer endpoint detection by reflectometry or scatterometry
US7298091B2 (en) * 2002-02-01 2007-11-20 The Regents Of The University Of California Matching network for RF plasma source
US6946847B2 (en) * 2002-02-08 2005-09-20 Daihen Corporation Impedance matching device provided with reactance-impedance table
US6794951B2 (en) * 2002-08-05 2004-09-21 Veeco Instruments, Inc. Solid state RF power switching network
US7212078B2 (en) * 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US7910013B2 (en) * 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7042311B1 (en) * 2003-10-10 2006-05-09 Novellus Systems, Inc. RF delivery configuration in a plasma processing system
JP3768999B2 (ja) * 2003-10-29 2006-04-19 澄英 池之内 プラズマ処理装置とその制御方法
JP2006139949A (ja) * 2004-11-10 2006-06-01 Sumihide Ikenouchi インピーダンス整合器及びこれを用いたプラズマ処理装置
KR20070108229A (ko) * 2005-03-05 2007-11-08 이노베이션 엔지니어링, 엘엘씨 전자적 가변 커패시터 어레이
US7794615B2 (en) * 2005-03-31 2010-09-14 Tokyo Electron Limited Plasma processing method and apparatus, and autorunning program for variable matching unit
TWI425767B (zh) 2005-10-31 2014-02-01 Mks Instr Inc 無線電頻率電力傳送系統
US20080179948A1 (en) 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
US7555276B2 (en) * 2005-12-19 2009-06-30 Sony Ericsson Mobile Communications Ab Devices, methods, and computer program products for controlling power transfer to an antenna in a wireless mobile terminal
US7212934B1 (en) * 2006-03-06 2007-05-01 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration String resistance detector
US20080061901A1 (en) * 2006-09-13 2008-03-13 Jack Arthur Gilmore Apparatus and Method for Switching Between Matching Impedances
JP5246836B2 (ja) * 2007-01-24 2013-07-24 東京エレクトロン株式会社 プラズマ処理装置用のプロセス性能検査方法及び装置
US8073646B2 (en) * 2007-03-30 2011-12-06 Tokyo Electron Limited Plasma processing apparatus, radio frequency generator and correction method therefor
FR2919901B1 (fr) * 2007-08-08 2010-02-26 Renault Sas Dispositif de generation de plasma radiofrequence
US8855554B2 (en) 2008-03-05 2014-10-07 Qualcomm Incorporated Packaging and details of a wireless power device
JP2011518540A (ja) 2008-04-21 2011-06-23 クゥアルコム・インコーポレイテッド 短距離の効率的な無線電力伝送
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
JP2011522381A (ja) 2008-05-30 2011-07-28 コロラド ステート ユニバーシティ リサーチ ファンデーション プラズマに基づく化学源装置およびその使用方法
CN102215733B (zh) * 2008-11-18 2014-06-18 奥林巴斯株式会社 胶囊型医疗装置、供电装置以及供电系统
US8497658B2 (en) 2009-01-22 2013-07-30 Qualcomm Incorporated Adaptive power control for wireless charging of devices
DE102009001355B4 (de) * 2009-03-05 2015-01-22 TRUMPF Hüttinger GmbH + Co. KG Impedanzanpassungsschaltung und Verfahren zur Impedanzanpassung
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
US8501631B2 (en) * 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP2013529352A (ja) 2010-03-31 2013-07-18 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
CA2794902A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
CN102438389B (zh) * 2010-09-29 2013-06-05 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
US8416008B2 (en) * 2011-01-20 2013-04-09 Advanced Energy Industries, Inc. Impedance-matching network using BJT switches in variable-reactance circuits
KR20130047532A (ko) * 2011-10-31 2013-05-08 세메스 주식회사 기판처리장치 및 임피던스매칭방법
US9620334B2 (en) * 2012-12-17 2017-04-11 Lam Research Corporation Control of etch rate using modeling, feedback and impedance match
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
US10431428B2 (en) 2014-01-10 2019-10-01 Reno Technologies, Inc. System for providing variable capacitance
US9755641B1 (en) 2014-01-10 2017-09-05 Reno Technologies, Inc. High speed high voltage switching circuit
US9865432B1 (en) 2014-01-10 2018-01-09 Reno Technologies, Inc. RF impedance matching network
US9697991B2 (en) 2014-01-10 2017-07-04 Reno Technologies, Inc. RF impedance matching network
US9496122B1 (en) 2014-01-10 2016-11-15 Reno Technologies, Inc. Electronically variable capacitor and RF matching network incorporating same
US9196459B2 (en) 2014-01-10 2015-11-24 Reno Technologies, Inc. RF impedance matching network
US10455729B2 (en) 2014-01-10 2019-10-22 Reno Technologies, Inc. Enclosure cooling system
US9844127B2 (en) 2014-01-10 2017-12-12 Reno Technologies, Inc. High voltage switching circuit
US11017983B2 (en) 2015-02-18 2021-05-25 Reno Technologies, Inc. RF power amplifier
US10340879B2 (en) 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US12119206B2 (en) * 2015-02-18 2024-10-15 Asm America, Inc. Switching circuit
US9306533B1 (en) 2015-02-20 2016-04-05 Reno Technologies, Inc. RF impedance matching network
US9729122B2 (en) 2015-02-18 2017-08-08 Reno Technologies, Inc. Switching circuit
US9525412B2 (en) 2015-02-18 2016-12-20 Reno Technologies, Inc. Switching circuit
US11150283B2 (en) 2015-06-29 2021-10-19 Reno Technologies, Inc. Amplitude and phase detection circuit
US11342160B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Filter for impedance matching
US11335540B2 (en) 2015-06-29 2022-05-17 Reno Technologies, Inc. Impedance matching network and method
US10692699B2 (en) 2015-06-29 2020-06-23 Reno Technologies, Inc. Impedance matching with restricted capacitor switching
US11342161B2 (en) 2015-06-29 2022-05-24 Reno Technologies, Inc. Switching circuit with voltage bias
US10984986B2 (en) 2015-06-29 2021-04-20 Reno Technologies, Inc. Impedance matching network and method
US11081316B2 (en) 2015-06-29 2021-08-03 Reno Technologies, Inc. Impedance matching network and method
US20180061984A1 (en) 2016-08-29 2018-03-01 Macom Technology Solutions Holdings, Inc. Self-biasing and self-sequencing of depletion-mode transistors
US10110218B2 (en) * 2016-11-18 2018-10-23 Macom Technology Solutions Holdings, Inc. Integrated biasing for pin diode drivers
US10560062B2 (en) 2016-11-18 2020-02-11 Macom Technology Solutions Holdings, Inc. Programmable biasing for pin diode drivers
US20180358886A1 (en) 2017-06-09 2018-12-13 MACOM Technology Solution Holdings, Inc. Integrated solution for multi-voltage generation with thermal protection
US11398370B2 (en) 2017-07-10 2022-07-26 Reno Technologies, Inc. Semiconductor manufacturing using artificial intelligence
US11476091B2 (en) 2017-07-10 2022-10-18 Reno Technologies, Inc. Impedance matching network for diagnosing plasma chamber
US11521833B2 (en) 2017-07-10 2022-12-06 Reno Technologies, Inc. Combined RF generator and RF solid-state matching network
US12334307B2 (en) 2017-07-10 2025-06-17 Asm Ip Holding B.V. Power control for rf impedance matching network
US11289307B2 (en) 2017-07-10 2022-03-29 Reno Technologies, Inc. Impedance matching network and method
US10483090B2 (en) 2017-07-10 2019-11-19 Reno Technologies, Inc. Restricted capacitor switching
US11315758B2 (en) 2017-07-10 2022-04-26 Reno Technologies, Inc. Impedance matching using electronically variable capacitance and frequency considerations
US11114280B2 (en) 2017-07-10 2021-09-07 Reno Technologies, Inc. Impedance matching with multi-level power setpoint
US11101110B2 (en) 2017-07-10 2021-08-24 Reno Technologies, Inc. Impedance matching network and method
US12272522B2 (en) * 2017-07-10 2025-04-08 Asm America, Inc. Resonant filter for solid state RF impedance matching network
US11393659B2 (en) 2017-07-10 2022-07-19 Reno Technologies, Inc. Impedance matching network and method
US10714314B1 (en) 2017-07-10 2020-07-14 Reno Technologies, Inc. Impedance matching network and method
US10727029B2 (en) 2017-07-10 2020-07-28 Reno Technologies, Inc Impedance matching using independent capacitance and frequency control
DE102017008001A1 (de) 2017-08-25 2019-02-28 Aurion Anlagentechnik Gmbh Hochfrequenz- Impedanz Anpassungsnetzwerk, seine Verwendung sowie ein Verfahren zur Hochfrequenz-lmpedanz - Anpassung
US11099222B2 (en) * 2019-01-20 2021-08-24 Christopher T. Baumgartner Near-field electrostatic communications system
US11538662B2 (en) 2019-05-21 2022-12-27 Reno Technologies, Inc. Impedance matching network and method with reduced memory requirements
US11189464B2 (en) 2019-07-17 2021-11-30 Beijing E-town Semiconductor Technology Co., Ltd. Variable mode plasma chamber utilizing tunable plasma potential
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
US11049692B2 (en) 2019-07-17 2021-06-29 Mattson Technology, Inc. Methods for tuning plasma potential using variable mode plasma chamber
CN110768643B (zh) * 2019-10-11 2023-08-01 成都挚信电子技术有限责任公司 一种基于射频微机电结构的电控阻抗调配芯片及微波系统
US12155227B2 (en) 2019-10-24 2024-11-26 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods involving wireless power transfer using an amplifier with gain and feedback
CN110909514B (zh) * 2019-11-29 2023-05-30 北京北广科技股份有限公司 一种匹配网络的仿真调试方法和仿真调试平台
US11887820B2 (en) * 2020-01-10 2024-01-30 COMET Technologies USA, Inc. Sector shunts for plasma-based wafer processing systems
DE202020102084U1 (de) 2020-04-15 2020-05-13 TRUMPF Hüttinger GmbH + Co. KG Impedanzanpassungsschaltung und Plasmaversorgungssystem

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1207566A (fr) 1958-06-26 1960-02-17 Trt Telecom Radio Electr Perfectionnements aux dispositifs d'accord automatique sur une charge largement variable
US4201960A (en) * 1978-05-24 1980-05-06 Motorola, Inc. Method for automatically matching a radio frequency transmitter to an antenna
US4486722A (en) * 1982-02-18 1984-12-04 Rockwell International Corporation Pin diode switched impedance matching network having diode driver circuits transparent to RF potential
JPS61206322A (ja) * 1985-03-11 1986-09-12 Fujitsu Ltd アンテナインピ−ダンス整合回路
US5195045A (en) * 1991-02-27 1993-03-16 Astec America, Inc. Automatic impedance matching apparatus and method
US5815047A (en) * 1993-10-29 1998-09-29 Applied Materials, Inc. Fast transition RF impedance matching network for plasma reactor ignition
US5424691A (en) 1994-02-03 1995-06-13 Sadinsky; Samuel Apparatus and method for electronically controlled admittance matching network
US5689215A (en) * 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US5654679A (en) 1996-06-13 1997-08-05 Rf Power Products, Inc. Apparatus for matching a variable load impedance with an RF power generator impedance
JP2929284B2 (ja) * 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
US5842154A (en) * 1997-09-15 1998-11-24 Eni Technologies, Inc. Fuzzy logic tuning of RF matching network

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009514176A (ja) * 2005-10-31 2009-04-02 エム ケー エス インストルメンツ インコーポレーテッド 無線周波数電力搬送システム
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法
KR20130086825A (ko) * 2012-01-26 2013-08-05 세메스 주식회사 가변커패시터, 임피던스매칭장치 및 기판처리장치
US20150000842A1 (en) * 2012-02-20 2015-01-01 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
US10755894B2 (en) 2012-02-20 2020-08-25 Tokyo Electron Limited Power supply system
JP2015167070A (ja) * 2014-03-03 2015-09-24 株式会社島津製作所 高周波電源装置
US10327322B2 (en) 2014-03-03 2019-06-18 Shimadzu Corporation Radio-frequency power unit
JP2023530361A (ja) * 2020-06-19 2023-07-14 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置
JP7589262B2 (ja) 2020-06-19 2024-11-25 トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置
KR102887529B1 (ko) 2020-06-19 2025-11-17 트럼프 헛팅거 게엠베하 + 코 카게 스위칭 가능한 리액턴스 유닛, 가변 리액턴스, 고주파 전력 발생기, 및 스위칭 가능한 리액턴스 유닛을 갖는 임피던스 정합 조립체

Also Published As

Publication number Publication date
DE60044612D1 (de) 2010-08-12
EP1236275B1 (en) 2010-06-30
AU4511501A (en) 2001-06-18
EP1236275A4 (en) 2006-09-27
EP1236275A1 (en) 2002-09-04
US6424232B1 (en) 2002-07-23
WO2001043282A1 (en) 2001-06-14

Similar Documents

Publication Publication Date Title
JP2003516691A (ja) 可変負荷切換可能インピーダンス・マッチング・システム
EP0904634B1 (en) Method and apparatus for matching a variable load impedance with an rf power generator impedance
US6677711B2 (en) Plasma processor method and apparatus
US9715996B2 (en) Adjustable capacitor, plasma impedance matching device, plasma impedance matching method, and substrate treating apparatus
US5473291A (en) Solid state plasma chamber tuner
EP0840941B1 (en) Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor
US7042311B1 (en) RF delivery configuration in a plasma processing system
CN101866807B (zh) 具有响应多个rf频率的等离子体处理器
US20080061901A1 (en) Apparatus and Method for Switching Between Matching Impedances
US7879185B2 (en) Dual frequency RF match
US6592710B1 (en) Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator
WO1997024748A1 (en) Apparatus for controlling matching network of a vacuum plasma processor and memory for same
CN109412574B (zh) 一种射频电源的功率传输方法
US20080284537A1 (en) Impedance Matching Network, and Plasma Processing Apparatus Using Such Impedance Matching Network
CN113066712B (zh) 阻抗匹配方法、半导体工艺设备
US6437302B1 (en) Interruptible variable frequency power supply and load matching circuit, and method of design
CN117424575B (zh) 射频电路、射频电源设备及电抗补偿方法
JP2576026B2 (ja) プラズマ処理装置
JPH0653770A (ja) アンテナ整合器
US11626853B2 (en) RF power delivery architecture with switchable match and frequency tuning
KR20040084079A (ko) 고주파 정합 장치 및 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071130

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090616

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090916

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090928

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091016

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091023

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091116

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091124

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091216

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100126