JP2003516691A - 可変負荷切換可能インピーダンス・マッチング・システム - Google Patents
可変負荷切換可能インピーダンス・マッチング・システムInfo
- Publication number
- JP2003516691A JP2003516691A JP2001543853A JP2001543853A JP2003516691A JP 2003516691 A JP2003516691 A JP 2003516691A JP 2001543853 A JP2001543853 A JP 2001543853A JP 2001543853 A JP2001543853 A JP 2001543853A JP 2003516691 A JP2003516691 A JP 2003516691A
- Authority
- JP
- Japan
- Prior art keywords
- load
- impedance
- coupled
- magnitude
- capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 66
- 230000005540 biological transmission Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 230000010363 phase shift Effects 0.000 claims description 14
- 230000001939 inductive effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims 6
- 238000010168 coupling process Methods 0.000 claims 6
- 238000005859 coupling reaction Methods 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000872 buffer Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/451,512 | 1999-11-30 | ||
| US09/451,512 US6424232B1 (en) | 1999-11-30 | 1999-11-30 | Method and apparatus for matching a variable load impedance with an RF power generator impedance |
| PCT/US2000/042460 WO2001043282A1 (en) | 1999-11-30 | 2000-11-30 | Variable load switchable impedance matching system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003516691A true JP2003516691A (ja) | 2003-05-13 |
| JP2003516691A5 JP2003516691A5 (enExample) | 2008-01-31 |
Family
ID=23792528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001543853A Pending JP2003516691A (ja) | 1999-11-30 | 2000-11-30 | 可変負荷切換可能インピーダンス・マッチング・システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6424232B1 (enExample) |
| EP (1) | EP1236275B1 (enExample) |
| JP (1) | JP2003516691A (enExample) |
| AU (1) | AU4511501A (enExample) |
| DE (1) | DE60044612D1 (enExample) |
| WO (1) | WO2001043282A1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009514176A (ja) * | 2005-10-31 | 2009-04-02 | エム ケー エス インストルメンツ インコーポレーテッド | 無線周波数電力搬送システム |
| JP2013098177A (ja) * | 2011-10-31 | 2013-05-20 | Semes Co Ltd | 基板処理装置及びインピーダンスマッチング方法 |
| KR20130086825A (ko) * | 2012-01-26 | 2013-08-05 | 세메스 주식회사 | 가변커패시터, 임피던스매칭장치 및 기판처리장치 |
| US20150000842A1 (en) * | 2012-02-20 | 2015-01-01 | Tokyo Electron Limited | Power supply system, plasma etching apparatus, and plasma etching method |
| JP2015167070A (ja) * | 2014-03-03 | 2015-09-24 | 株式会社島津製作所 | 高周波電源装置 |
| JP2023530361A (ja) * | 2020-06-19 | 2023-07-14 | トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置 |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150628A (en) * | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
| US6924455B1 (en) | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
| US7569790B2 (en) | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
| US7166816B1 (en) * | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
| US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
| US6516742B1 (en) * | 1998-02-26 | 2003-02-11 | Micron Technology, Inc. | Apparatus for improved low pressure inductively coupled high density plasma reactor |
| JP2000322023A (ja) * | 1999-04-17 | 2000-11-24 | Lg Electronics Inc | 高周波プラズマディスプレーパネルの駆動回路 |
| US20020185067A1 (en) * | 2001-06-07 | 2002-12-12 | International Business Machines Corporation | Apparatus and method for in-situ cleaning of a throttle valve in a CVD system |
| US6758612B1 (en) * | 2002-01-16 | 2004-07-06 | Advanced Micro Devices, Inc. | System and method for developer endpoint detection by reflectometry or scatterometry |
| US7298091B2 (en) * | 2002-02-01 | 2007-11-20 | The Regents Of The University Of California | Matching network for RF plasma source |
| US6946847B2 (en) * | 2002-02-08 | 2005-09-20 | Daihen Corporation | Impedance matching device provided with reactance-impedance table |
| US6794951B2 (en) * | 2002-08-05 | 2004-09-21 | Veeco Instruments, Inc. | Solid state RF power switching network |
| US7212078B2 (en) * | 2003-02-25 | 2007-05-01 | Tokyo Electron Limited | Method and assembly for providing impedance matching network and network assembly |
| US7910013B2 (en) * | 2003-05-16 | 2011-03-22 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7795153B2 (en) * | 2003-05-16 | 2010-09-14 | Applied Materials, Inc. | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters |
| US7470626B2 (en) * | 2003-05-16 | 2008-12-30 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
| US7452824B2 (en) * | 2003-05-16 | 2008-11-18 | Applied Materials, Inc. | Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters |
| US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
| US7901952B2 (en) | 2003-05-16 | 2011-03-08 | Applied Materials, Inc. | Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters |
| US7042311B1 (en) * | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
| JP3768999B2 (ja) * | 2003-10-29 | 2006-04-19 | 澄英 池之内 | プラズマ処理装置とその制御方法 |
| JP2006139949A (ja) * | 2004-11-10 | 2006-06-01 | Sumihide Ikenouchi | インピーダンス整合器及びこれを用いたプラズマ処理装置 |
| KR20070108229A (ko) * | 2005-03-05 | 2007-11-08 | 이노베이션 엔지니어링, 엘엘씨 | 전자적 가변 커패시터 어레이 |
| US7794615B2 (en) * | 2005-03-31 | 2010-09-14 | Tokyo Electron Limited | Plasma processing method and apparatus, and autorunning program for variable matching unit |
| TWI425767B (zh) | 2005-10-31 | 2014-02-01 | Mks Instr Inc | 無線電頻率電力傳送系統 |
| US20080179948A1 (en) | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
| US7555276B2 (en) * | 2005-12-19 | 2009-06-30 | Sony Ericsson Mobile Communications Ab | Devices, methods, and computer program products for controlling power transfer to an antenna in a wireless mobile terminal |
| US7212934B1 (en) * | 2006-03-06 | 2007-05-01 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | String resistance detector |
| US20080061901A1 (en) * | 2006-09-13 | 2008-03-13 | Jack Arthur Gilmore | Apparatus and Method for Switching Between Matching Impedances |
| JP5246836B2 (ja) * | 2007-01-24 | 2013-07-24 | 東京エレクトロン株式会社 | プラズマ処理装置用のプロセス性能検査方法及び装置 |
| US8073646B2 (en) * | 2007-03-30 | 2011-12-06 | Tokyo Electron Limited | Plasma processing apparatus, radio frequency generator and correction method therefor |
| FR2919901B1 (fr) * | 2007-08-08 | 2010-02-26 | Renault Sas | Dispositif de generation de plasma radiofrequence |
| US8855554B2 (en) | 2008-03-05 | 2014-10-07 | Qualcomm Incorporated | Packaging and details of a wireless power device |
| JP2011518540A (ja) | 2008-04-21 | 2011-06-23 | クゥアルコム・インコーポレイテッド | 短距離の効率的な無線電力伝送 |
| US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
| US8575843B2 (en) | 2008-05-30 | 2013-11-05 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
| JP2011522381A (ja) | 2008-05-30 | 2011-07-28 | コロラド ステート ユニバーシティ リサーチ ファンデーション | プラズマに基づく化学源装置およびその使用方法 |
| CN102215733B (zh) * | 2008-11-18 | 2014-06-18 | 奥林巴斯株式会社 | 胶囊型医疗装置、供电装置以及供电系统 |
| US8497658B2 (en) | 2009-01-22 | 2013-07-30 | Qualcomm Incorporated | Adaptive power control for wireless charging of devices |
| DE102009001355B4 (de) * | 2009-03-05 | 2015-01-22 | TRUMPF Hüttinger GmbH + Co. KG | Impedanzanpassungsschaltung und Verfahren zur Impedanzanpassung |
| US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| US8501631B2 (en) * | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| JP2013529352A (ja) | 2010-03-31 | 2013-07-18 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
| CA2794902A1 (en) | 2010-03-31 | 2011-10-06 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
| CN102438389B (zh) * | 2010-09-29 | 2013-06-05 | 中微半导体设备(上海)有限公司 | 单一匹配网络、其构建方法和该匹配网络射频功率源系统 |
| US8416008B2 (en) * | 2011-01-20 | 2013-04-09 | Advanced Energy Industries, Inc. | Impedance-matching network using BJT switches in variable-reactance circuits |
| KR20130047532A (ko) * | 2011-10-31 | 2013-05-08 | 세메스 주식회사 | 기판처리장치 및 임피던스매칭방법 |
| US9620334B2 (en) * | 2012-12-17 | 2017-04-11 | Lam Research Corporation | Control of etch rate using modeling, feedback and impedance match |
| US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
| US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
| US10580623B2 (en) * | 2013-11-19 | 2020-03-03 | Applied Materials, Inc. | Plasma processing using multiple radio frequency power feeds for improved uniformity |
| US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
| US9755641B1 (en) | 2014-01-10 | 2017-09-05 | Reno Technologies, Inc. | High speed high voltage switching circuit |
| US9865432B1 (en) | 2014-01-10 | 2018-01-09 | Reno Technologies, Inc. | RF impedance matching network |
| US9697991B2 (en) | 2014-01-10 | 2017-07-04 | Reno Technologies, Inc. | RF impedance matching network |
| US9496122B1 (en) | 2014-01-10 | 2016-11-15 | Reno Technologies, Inc. | Electronically variable capacitor and RF matching network incorporating same |
| US9196459B2 (en) | 2014-01-10 | 2015-11-24 | Reno Technologies, Inc. | RF impedance matching network |
| US10455729B2 (en) | 2014-01-10 | 2019-10-22 | Reno Technologies, Inc. | Enclosure cooling system |
| US9844127B2 (en) | 2014-01-10 | 2017-12-12 | Reno Technologies, Inc. | High voltage switching circuit |
| US11017983B2 (en) | 2015-02-18 | 2021-05-25 | Reno Technologies, Inc. | RF power amplifier |
| US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
| US12119206B2 (en) * | 2015-02-18 | 2024-10-15 | Asm America, Inc. | Switching circuit |
| US9306533B1 (en) | 2015-02-20 | 2016-04-05 | Reno Technologies, Inc. | RF impedance matching network |
| US9729122B2 (en) | 2015-02-18 | 2017-08-08 | Reno Technologies, Inc. | Switching circuit |
| US9525412B2 (en) | 2015-02-18 | 2016-12-20 | Reno Technologies, Inc. | Switching circuit |
| US11150283B2 (en) | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
| US11342160B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Filter for impedance matching |
| US11335540B2 (en) | 2015-06-29 | 2022-05-17 | Reno Technologies, Inc. | Impedance matching network and method |
| US10692699B2 (en) | 2015-06-29 | 2020-06-23 | Reno Technologies, Inc. | Impedance matching with restricted capacitor switching |
| US11342161B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Switching circuit with voltage bias |
| US10984986B2 (en) | 2015-06-29 | 2021-04-20 | Reno Technologies, Inc. | Impedance matching network and method |
| US11081316B2 (en) | 2015-06-29 | 2021-08-03 | Reno Technologies, Inc. | Impedance matching network and method |
| US20180061984A1 (en) | 2016-08-29 | 2018-03-01 | Macom Technology Solutions Holdings, Inc. | Self-biasing and self-sequencing of depletion-mode transistors |
| US10110218B2 (en) * | 2016-11-18 | 2018-10-23 | Macom Technology Solutions Holdings, Inc. | Integrated biasing for pin diode drivers |
| US10560062B2 (en) | 2016-11-18 | 2020-02-11 | Macom Technology Solutions Holdings, Inc. | Programmable biasing for pin diode drivers |
| US20180358886A1 (en) | 2017-06-09 | 2018-12-13 | MACOM Technology Solution Holdings, Inc. | Integrated solution for multi-voltage generation with thermal protection |
| US11398370B2 (en) | 2017-07-10 | 2022-07-26 | Reno Technologies, Inc. | Semiconductor manufacturing using artificial intelligence |
| US11476091B2 (en) | 2017-07-10 | 2022-10-18 | Reno Technologies, Inc. | Impedance matching network for diagnosing plasma chamber |
| US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
| US12334307B2 (en) | 2017-07-10 | 2025-06-17 | Asm Ip Holding B.V. | Power control for rf impedance matching network |
| US11289307B2 (en) | 2017-07-10 | 2022-03-29 | Reno Technologies, Inc. | Impedance matching network and method |
| US10483090B2 (en) | 2017-07-10 | 2019-11-19 | Reno Technologies, Inc. | Restricted capacitor switching |
| US11315758B2 (en) | 2017-07-10 | 2022-04-26 | Reno Technologies, Inc. | Impedance matching using electronically variable capacitance and frequency considerations |
| US11114280B2 (en) | 2017-07-10 | 2021-09-07 | Reno Technologies, Inc. | Impedance matching with multi-level power setpoint |
| US11101110B2 (en) | 2017-07-10 | 2021-08-24 | Reno Technologies, Inc. | Impedance matching network and method |
| US12272522B2 (en) * | 2017-07-10 | 2025-04-08 | Asm America, Inc. | Resonant filter for solid state RF impedance matching network |
| US11393659B2 (en) | 2017-07-10 | 2022-07-19 | Reno Technologies, Inc. | Impedance matching network and method |
| US10714314B1 (en) | 2017-07-10 | 2020-07-14 | Reno Technologies, Inc. | Impedance matching network and method |
| US10727029B2 (en) | 2017-07-10 | 2020-07-28 | Reno Technologies, Inc | Impedance matching using independent capacitance and frequency control |
| DE102017008001A1 (de) | 2017-08-25 | 2019-02-28 | Aurion Anlagentechnik Gmbh | Hochfrequenz- Impedanz Anpassungsnetzwerk, seine Verwendung sowie ein Verfahren zur Hochfrequenz-lmpedanz - Anpassung |
| US11099222B2 (en) * | 2019-01-20 | 2021-08-24 | Christopher T. Baumgartner | Near-field electrostatic communications system |
| US11538662B2 (en) | 2019-05-21 | 2022-12-27 | Reno Technologies, Inc. | Impedance matching network and method with reduced memory requirements |
| US11189464B2 (en) | 2019-07-17 | 2021-11-30 | Beijing E-town Semiconductor Technology Co., Ltd. | Variable mode plasma chamber utilizing tunable plasma potential |
| TWI887254B (zh) * | 2019-07-17 | 2025-06-21 | 美商得昇科技股份有限公司 | 利用可調式電漿電位的可變模式電漿室 |
| US11049692B2 (en) | 2019-07-17 | 2021-06-29 | Mattson Technology, Inc. | Methods for tuning plasma potential using variable mode plasma chamber |
| CN110768643B (zh) * | 2019-10-11 | 2023-08-01 | 成都挚信电子技术有限责任公司 | 一种基于射频微机电结构的电控阻抗调配芯片及微波系统 |
| US12155227B2 (en) | 2019-10-24 | 2024-11-26 | The Board Of Trustees Of The Leland Stanford Junior University | Systems and methods involving wireless power transfer using an amplifier with gain and feedback |
| CN110909514B (zh) * | 2019-11-29 | 2023-05-30 | 北京北广科技股份有限公司 | 一种匹配网络的仿真调试方法和仿真调试平台 |
| US11887820B2 (en) * | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| DE202020102084U1 (de) | 2020-04-15 | 2020-05-13 | TRUMPF Hüttinger GmbH + Co. KG | Impedanzanpassungsschaltung und Plasmaversorgungssystem |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1207566A (fr) | 1958-06-26 | 1960-02-17 | Trt Telecom Radio Electr | Perfectionnements aux dispositifs d'accord automatique sur une charge largement variable |
| US4201960A (en) * | 1978-05-24 | 1980-05-06 | Motorola, Inc. | Method for automatically matching a radio frequency transmitter to an antenna |
| US4486722A (en) * | 1982-02-18 | 1984-12-04 | Rockwell International Corporation | Pin diode switched impedance matching network having diode driver circuits transparent to RF potential |
| JPS61206322A (ja) * | 1985-03-11 | 1986-09-12 | Fujitsu Ltd | アンテナインピ−ダンス整合回路 |
| US5195045A (en) * | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
| US5815047A (en) * | 1993-10-29 | 1998-09-29 | Applied Materials, Inc. | Fast transition RF impedance matching network for plasma reactor ignition |
| US5424691A (en) | 1994-02-03 | 1995-06-13 | Sadinsky; Samuel | Apparatus and method for electronically controlled admittance matching network |
| US5689215A (en) * | 1996-05-23 | 1997-11-18 | Lam Research Corporation | Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor |
| US5654679A (en) | 1996-06-13 | 1997-08-05 | Rf Power Products, Inc. | Apparatus for matching a variable load impedance with an RF power generator impedance |
| JP2929284B2 (ja) * | 1997-09-10 | 1999-08-03 | 株式会社アドテック | 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム |
| US5842154A (en) * | 1997-09-15 | 1998-11-24 | Eni Technologies, Inc. | Fuzzy logic tuning of RF matching network |
-
1999
- 1999-11-30 US US09/451,512 patent/US6424232B1/en not_active Expired - Lifetime
-
2000
- 2000-11-30 DE DE60044612T patent/DE60044612D1/de not_active Expired - Lifetime
- 2000-11-30 JP JP2001543853A patent/JP2003516691A/ja active Pending
- 2000-11-30 EP EP00992571A patent/EP1236275B1/en not_active Expired - Lifetime
- 2000-11-30 AU AU45115/01A patent/AU4511501A/en not_active Abandoned
- 2000-11-30 WO PCT/US2000/042460 patent/WO2001043282A1/en not_active Ceased
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009514176A (ja) * | 2005-10-31 | 2009-04-02 | エム ケー エス インストルメンツ インコーポレーテッド | 無線周波数電力搬送システム |
| JP2013098177A (ja) * | 2011-10-31 | 2013-05-20 | Semes Co Ltd | 基板処理装置及びインピーダンスマッチング方法 |
| KR20130086825A (ko) * | 2012-01-26 | 2013-08-05 | 세메스 주식회사 | 가변커패시터, 임피던스매칭장치 및 기판처리장치 |
| US20150000842A1 (en) * | 2012-02-20 | 2015-01-01 | Tokyo Electron Limited | Power supply system, plasma etching apparatus, and plasma etching method |
| US9922802B2 (en) * | 2012-02-20 | 2018-03-20 | Tokyo Electron Limited | Power supply system, plasma etching apparatus, and plasma etching method |
| US10755894B2 (en) | 2012-02-20 | 2020-08-25 | Tokyo Electron Limited | Power supply system |
| JP2015167070A (ja) * | 2014-03-03 | 2015-09-24 | 株式会社島津製作所 | 高周波電源装置 |
| US10327322B2 (en) | 2014-03-03 | 2019-06-18 | Shimadzu Corporation | Radio-frequency power unit |
| JP2023530361A (ja) * | 2020-06-19 | 2023-07-14 | トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置 |
| JP7589262B2 (ja) | 2020-06-19 | 2024-11-25 | トゥルンプフ ヒュッティンガー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト | スイッチング可能なリアクタンスユニット、可変リアクタンス、hf発生器、及び、スイッチング可能なリアクタンスユニットを有するインピーダンス整合装置 |
| KR102887529B1 (ko) | 2020-06-19 | 2025-11-17 | 트럼프 헛팅거 게엠베하 + 코 카게 | 스위칭 가능한 리액턴스 유닛, 가변 리액턴스, 고주파 전력 발생기, 및 스위칭 가능한 리액턴스 유닛을 갖는 임피던스 정합 조립체 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60044612D1 (de) | 2010-08-12 |
| EP1236275B1 (en) | 2010-06-30 |
| AU4511501A (en) | 2001-06-18 |
| EP1236275A4 (en) | 2006-09-27 |
| EP1236275A1 (en) | 2002-09-04 |
| US6424232B1 (en) | 2002-07-23 |
| WO2001043282A1 (en) | 2001-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003516691A (ja) | 可変負荷切換可能インピーダンス・マッチング・システム | |
| EP0904634B1 (en) | Method and apparatus for matching a variable load impedance with an rf power generator impedance | |
| US6677711B2 (en) | Plasma processor method and apparatus | |
| US9715996B2 (en) | Adjustable capacitor, plasma impedance matching device, plasma impedance matching method, and substrate treating apparatus | |
| US5473291A (en) | Solid state plasma chamber tuner | |
| EP0840941B1 (en) | Method of and apparatus for controlling reactive impedances of a matching network connected between an rf source and an rf plasma processor | |
| US7042311B1 (en) | RF delivery configuration in a plasma processing system | |
| CN101866807B (zh) | 具有响应多个rf频率的等离子体处理器 | |
| US20080061901A1 (en) | Apparatus and Method for Switching Between Matching Impedances | |
| US7879185B2 (en) | Dual frequency RF match | |
| US6592710B1 (en) | Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator | |
| WO1997024748A1 (en) | Apparatus for controlling matching network of a vacuum plasma processor and memory for same | |
| CN109412574B (zh) | 一种射频电源的功率传输方法 | |
| US20080284537A1 (en) | Impedance Matching Network, and Plasma Processing Apparatus Using Such Impedance Matching Network | |
| CN113066712B (zh) | 阻抗匹配方法、半导体工艺设备 | |
| US6437302B1 (en) | Interruptible variable frequency power supply and load matching circuit, and method of design | |
| CN117424575B (zh) | 射频电路、射频电源设备及电抗补偿方法 | |
| JP2576026B2 (ja) | プラズマ処理装置 | |
| JPH0653770A (ja) | アンテナ整合器 | |
| US11626853B2 (en) | RF power delivery architecture with switchable match and frequency tuning | |
| KR20040084079A (ko) | 고주파 정합 장치 및 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071130 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071130 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090616 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090916 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090928 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091016 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091023 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091116 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091124 Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091124 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091216 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100126 |