JP2003510849A - Ｓｏｉプロセスにおける高速ラテラルバイポーラデバイス - Google Patents
Ｓｏｉプロセスにおける高速ラテラルバイポーラデバイスInfo
- Publication number
- JP2003510849A JP2003510849A JP2001527363A JP2001527363A JP2003510849A JP 2003510849 A JP2003510849 A JP 2003510849A JP 2001527363 A JP2001527363 A JP 2001527363A JP 2001527363 A JP2001527363 A JP 2001527363A JP 2003510849 A JP2003510849 A JP 2003510849A
- Authority
- JP
- Japan
- Prior art keywords
- region
- base
- bipolar transistor
- forming
- lateral bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 5
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000012937 correction Methods 0.000 description 21
- 230000000694 effects Effects 0.000 description 12
- 230000003071 parasitic effect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/041—Manufacture or treatment of thin-film BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/311—Thin-film BJTs
Landscapes
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/406,451 US6376880B1 (en) | 1999-09-27 | 1999-09-27 | High-speed lateral bipolar device in SOI process |
| US09/406,451 | 1999-09-27 | ||
| PCT/US2000/020958 WO2001024273A1 (en) | 1999-09-27 | 2000-08-01 | High-speed lateral bipolar device in soi process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003510849A true JP2003510849A (ja) | 2003-03-18 |
| JP2003510849A5 JP2003510849A5 (https=) | 2007-08-30 |
Family
ID=23608053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001527363A Pending JP2003510849A (ja) | 1999-09-27 | 2000-08-01 | Ｓｏｉプロセスにおける高速ラテラルバイポーラデバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6376880B1 (https=) |
| EP (1) | EP1218943A1 (https=) |
| JP (1) | JP2003510849A (https=) |
| KR (1) | KR100764919B1 (https=) |
| TW (1) | TW552709B (https=) |
| WO (1) | WO2001024273A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100764919B1 (ko) * | 1999-09-27 | 2007-10-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534834B1 (en) * | 2001-12-19 | 2003-03-18 | Agere Systems, Inc. | Polysilicon bounded snapback device |
| US6768180B2 (en) * | 2002-04-04 | 2004-07-27 | C. Andre T. Salama | Superjunction LDMOST using an insulator substrate for power integrated circuits |
| US7800143B2 (en) * | 2006-07-13 | 2010-09-21 | Globalfoundries Inc. | Dynamic random access memory with an amplified capacitor |
| US7679955B2 (en) * | 2006-08-02 | 2010-03-16 | Advanced Micro Devices, Inc. | Semiconductor switching device |
| CN101964359B (zh) * | 2009-07-24 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 双极晶体管及其形成方法、虚拟接地电路 |
| US20110018608A1 (en) * | 2009-07-24 | 2011-01-27 | Semiconductor Manufacturing International (Shanghai) Corporation | Bipolar Transistor, Band-Gap Reference Circuit and Virtual Ground Reference Circuit |
| US9281022B2 (en) * | 2013-07-10 | 2016-03-08 | Zeno Semiconductor, Inc. | Systems and methods for reducing standby power in floating body memory devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281760A (ja) * | 1985-10-07 | 1987-04-15 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0493032A (ja) * | 1990-08-09 | 1992-03-25 | Toshiba Corp | 半導体装置の製造方法 |
| JPH04317336A (ja) * | 1991-04-16 | 1992-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2503460B2 (ja) | 1986-12-01 | 1996-06-05 | 三菱電機株式会社 | バイポ−ラトランジスタおよびその製造方法 |
| US4922315A (en) | 1987-11-13 | 1990-05-01 | Kopin Corporation | Control gate lateral silicon-on-insulator bipolar transistor |
| JPH023238A (ja) | 1988-06-20 | 1990-01-08 | Nissan Motor Co Ltd | 薄膜バイポーラトランジスタの製造方法 |
| JPH04116935A (ja) | 1990-09-07 | 1992-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5185280A (en) | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
| FR2672733B1 (fr) * | 1991-02-13 | 1997-08-22 | France Telecom | Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos. |
| US5420055A (en) | 1992-01-22 | 1995-05-30 | Kopin Corporation | Reduction of parasitic effects in floating body MOSFETs |
| US5315144A (en) | 1992-09-18 | 1994-05-24 | Harris Corporation | Reduction of bipolar gain and improvement in snap-back sustaining voltage in SOI field effect transistor |
| EP0616370B1 (en) | 1993-03-16 | 2004-06-09 | Canon Kabushiki Kaisha | Semiconductor device comprising a lateral bipolar transistor including SiGe and method of manufacturing the same |
| DE4418206C2 (de) | 1994-05-25 | 1999-01-14 | Siemens Ag | CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben |
| DE19515797C1 (de) | 1995-04-28 | 1996-09-19 | Siemens Ag | SOI-BiCMOS-Verfahren |
| JP3545583B2 (ja) * | 1996-12-26 | 2004-07-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| KR20000045305A (ko) * | 1998-12-30 | 2000-07-15 | 김영환 | 완전 공핍형 에스·오·아이 소자 및 그 제조방법 |
| US6376880B1 (en) * | 1999-09-27 | 2002-04-23 | Advanced Micro Devices, Inc. | High-speed lateral bipolar device in SOI process |
-
1999
- 1999-09-27 US US09/406,451 patent/US6376880B1/en not_active Expired - Lifetime
-
2000
- 2000-08-01 WO PCT/US2000/020958 patent/WO2001024273A1/en not_active Ceased
- 2000-08-01 JP JP2001527363A patent/JP2003510849A/ja active Pending
- 2000-08-01 KR KR1020027003997A patent/KR100764919B1/ko not_active Expired - Fee Related
- 2000-08-01 EP EP00953778A patent/EP1218943A1/en not_active Withdrawn
- 2000-09-27 TW TW089119916A patent/TW552709B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6281760A (ja) * | 1985-10-07 | 1987-04-15 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0493032A (ja) * | 1990-08-09 | 1992-03-25 | Toshiba Corp | 半導体装置の製造方法 |
| JPH04317336A (ja) * | 1991-04-16 | 1992-11-09 | Toshiba Corp | 半導体装置およびその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100764919B1 (ko) * | 1999-09-27 | 2007-10-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | Ｓｏｉ 프로세스를 사용한 고속 래터럴 바이폴라 디바이스 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001024273A1 (en) | 2001-04-05 |
| KR100764919B1 (ko) | 2007-10-09 |
| TW552709B (en) | 2003-09-11 |
| EP1218943A1 (en) | 2002-07-03 |
| US6376880B1 (en) | 2002-04-23 |
| KR20020064291A (ko) | 2002-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070709 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070709 |
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| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110422 |
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| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110510 |
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| A02 | Decision of refusal |
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