JP2003503862A - 改良された金属用化学機械研磨スラリー - Google Patents

改良された金属用化学機械研磨スラリー

Info

Publication number
JP2003503862A
JP2003503862A JP2001507608A JP2001507608A JP2003503862A JP 2003503862 A JP2003503862 A JP 2003503862A JP 2001507608 A JP2001507608 A JP 2001507608A JP 2001507608 A JP2001507608 A JP 2001507608A JP 2003503862 A JP2003503862 A JP 2003503862A
Authority
JP
Japan
Prior art keywords
slurry
particles
polishing
less
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001507608A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003503862A5 (https=
Inventor
ラック,クレイグ・ディー
ルーオ,チュリャン
イェ,チャンチ・クリスティーン
サシャン,ヴィカス
トーマス,テレンス・エム
バーク,ピーター・エー
Original Assignee
ロデール ホールディングス インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロデール ホールディングス インコーポレイテッド filed Critical ロデール ホールディングス インコーポレイテッド
Publication of JP2003503862A publication Critical patent/JP2003503862A/ja
Publication of JP2003503862A5 publication Critical patent/JP2003503862A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2001507608A 1999-07-03 2000-06-21 改良された金属用化学機械研磨スラリー Pending JP2003503862A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14232699P 1999-07-03 1999-07-03
US60/142,326 1999-07-03
PCT/US2000/017046 WO2001002134A1 (en) 1999-07-03 2000-06-21 Improved chemical mechanical polishing slurries for metal

Publications (2)

Publication Number Publication Date
JP2003503862A true JP2003503862A (ja) 2003-01-28
JP2003503862A5 JP2003503862A5 (https=) 2005-08-04

Family

ID=22499420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001507608A Pending JP2003503862A (ja) 1999-07-03 2000-06-21 改良された金属用化学機械研磨スラリー

Country Status (6)

Country Link
US (1) US6447373B1 (https=)
EP (1) EP1177068A4 (https=)
JP (1) JP2003503862A (https=)
KR (1) KR20020035826A (https=)
TW (1) TW452523B (https=)
WO (1) WO2001002134A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511144A (ja) * 2009-11-13 2013-03-28 ビーエーエスエフ ソシエタス・ヨーロピア 無機粒子及びポリマー粒子を含む化学的機械研磨(cmp)組成物

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692546B2 (en) 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US6821897B2 (en) 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7976855B2 (en) * 2002-04-30 2011-07-12 Kimberly-Clark Worldwide, Inc. Metal ion modified high surface area materials for odor removal and control
US7578997B2 (en) 2002-04-30 2009-08-25 Kimberly-Clark Worldwide, Inc. Metal ion modified high surface area materials for odor removal and control
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US7427361B2 (en) 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US20060075075A1 (en) * 2004-10-01 2006-04-06 Malinen Jouni I Method and system to contextually initiate synchronization services on mobile terminals in an enterprise environment
DE102004055113A1 (de) * 2004-11-15 2006-05-18 Kissel & Wolf Gmbh Verfahren zur Hydrophilierung von Siebdruckschablonenträgern sowie Verfahren zur Entfernung von Schablonenmaterial von einem Siebdruckschablonenträger und Entschichtungsflüssigkeit hierfür
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
JP2009512862A (ja) * 2005-10-25 2009-03-26 フリースケール セミコンダクター インコーポレイテッド 半導体デバイス形成用スラリーの試験方法
US7691287B2 (en) 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
EP2914675A4 (en) * 2012-11-02 2016-10-05 L Livermore Nat Security Llc METHOD FOR PREVENTING AGGLOMERATION OF LOADED COLLOIDS WITHOUT LOSS OF SURFACE ACTIVITY
US9358659B2 (en) 2013-03-04 2016-06-07 Cabot Microelectronics Corporation Composition and method for polishing glass
KR102261822B1 (ko) * 2019-05-23 2021-06-08 에스케이씨솔믹스 주식회사 결함 발생이 감소된 cmp 슬러리 조성물 및 이의 제조방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5078801A (en) * 1990-08-14 1992-01-07 Intel Corporation Post-polish cleaning of oxidized substrates by reverse colloidation
JP2832270B2 (ja) * 1993-05-18 1998-12-09 三井金属鉱業株式会社 ガラス研磨用研磨材
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5603739A (en) * 1995-06-09 1997-02-18 Diamond Scientific, Inc. Abrasive suspension system
JPH11513619A (ja) * 1995-10-20 1999-11-24 ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー 無機リン酸塩を含有する研摩物品
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp., Tokuya Poliersuspensionen und Verfahren zu ihrer Herstellung
EP0786504A3 (en) * 1996-01-29 1998-05-20 Fujimi Incorporated Polishing composition
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6093649A (en) * 1998-08-07 2000-07-25 Rodel Holdings, Inc. Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto
TW419518B (en) * 1998-02-20 2001-01-21 Ind Tech Res Inst Non-Newtonian-fluid-behaviored formulation
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6162268A (en) * 1999-05-03 2000-12-19 Praxair S. T. Technology, Inc. Polishing slurry

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511144A (ja) * 2009-11-13 2013-03-28 ビーエーエスエフ ソシエタス・ヨーロピア 無機粒子及びポリマー粒子を含む化学的機械研磨(cmp)組成物

Also Published As

Publication number Publication date
EP1177068A1 (en) 2002-02-06
EP1177068A4 (en) 2004-06-16
WO2001002134A1 (en) 2001-01-11
TW452523B (en) 2001-09-01
KR20020035826A (ko) 2002-05-15
US6447373B1 (en) 2002-09-10

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