JP2003347302A - 信頼性向上のためのケイ化銅パッシベーション - Google Patents
信頼性向上のためのケイ化銅パッシベーションInfo
- Publication number
- JP2003347302A JP2003347302A JP2003120807A JP2003120807A JP2003347302A JP 2003347302 A JP2003347302 A JP 2003347302A JP 2003120807 A JP2003120807 A JP 2003120807A JP 2003120807 A JP2003120807 A JP 2003120807A JP 2003347302 A JP2003347302 A JP 2003347302A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- forming
- interconnect structure
- dielectric
- copper silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910021360 copper silicide Inorganic materials 0.000 title claims abstract description 101
- 238000002161 passivation Methods 0.000 title abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 217
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 166
- 229910052802 copper Inorganic materials 0.000 claims abstract description 161
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000077 silane Inorganic materials 0.000 claims abstract description 11
- 238000011065 in-situ storage Methods 0.000 claims abstract description 8
- 239000003989 dielectric material Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 17
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 230000000536 complexating effect Effects 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 38
- 239000000463 material Substances 0.000 abstract description 30
- 238000009792 diffusion process Methods 0.000 abstract description 15
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 230000008901 benefit Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100350458 Oryza sativa subsp. japonica RR25 gene Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 101150110620 RR22 gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13378202A | 2002-04-26 | 2002-04-26 | |
| US10/133782 | 2002-04-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010137862A Division JP2010232676A (ja) | 2002-04-26 | 2010-06-17 | 信頼性向上のためのケイ化銅パッシベーション |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347302A true JP2003347302A (ja) | 2003-12-05 |
| JP2003347302A5 JP2003347302A5 (enrdf_load_stackoverflow) | 2006-06-01 |
Family
ID=22460275
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003120807A Pending JP2003347302A (ja) | 2002-04-26 | 2003-04-25 | 信頼性向上のためのケイ化銅パッシベーション |
| JP2010137862A Withdrawn JP2010232676A (ja) | 2002-04-26 | 2010-06-17 | 信頼性向上のためのケイ化銅パッシベーション |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010137862A Withdrawn JP2010232676A (ja) | 2002-04-26 | 2010-06-17 | 信頼性向上のためのケイ化銅パッシベーション |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP2003347302A (enrdf_load_stackoverflow) |
| KR (1) | KR101005434B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2390742B (enrdf_load_stackoverflow) |
| TW (1) | TWI278963B (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007109736A (ja) * | 2005-10-11 | 2007-04-26 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US8344509B2 (en) | 2009-01-19 | 2013-01-01 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor device and semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101028811B1 (ko) * | 2003-12-29 | 2011-04-12 | 매그나칩 반도체 유한회사 | 반도체 소자의 듀얼 다마신 패턴 형성 방법 |
| US7229911B2 (en) | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| US20050233555A1 (en) * | 2004-04-19 | 2005-10-20 | Nagarajan Rajagopalan | Adhesion improvement for low k dielectrics to conductive materials |
| US8884441B2 (en) * | 2013-02-18 | 2014-11-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process of ultra thick trench etch with multi-slope profile |
| CN115295722A (zh) * | 2022-06-07 | 2022-11-04 | 昕原半导体(杭州)有限公司 | Rram下电极结构及其形成方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103840A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | ドライエツチング方法 |
| JPH04192527A (ja) * | 1990-11-27 | 1992-07-10 | Toshiba Corp | 半導体装置 |
| JPH11191556A (ja) * | 1997-12-26 | 1999-07-13 | Sony Corp | 半導体装置の製造方法および銅または銅合金パターンの形成方法 |
| JP2000058544A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
| JP2000195820A (ja) * | 1998-12-25 | 2000-07-14 | Sony Corp | 金属窒化物膜の形成方法およびこれを用いた電子装置 |
| JP2001185549A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2001313285A (ja) * | 2000-02-21 | 2001-11-09 | Hitachi Ltd | プラズマ処理装置及び試料の処理方法 |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5447887A (en) * | 1994-04-01 | 1995-09-05 | Motorola, Inc. | Method for capping copper in semiconductor devices |
| JP3661366B2 (ja) * | 1997-09-04 | 2005-06-15 | ソニー株式会社 | 半導体装置及びその製造方法 |
| US6303505B1 (en) * | 1998-07-09 | 2001-10-16 | Advanced Micro Devices, Inc. | Copper interconnect with improved electromigration resistance |
| US6406996B1 (en) * | 2000-09-30 | 2002-06-18 | Advanced Micro Devices, Inc. | Sub-cap and method of manufacture therefor in integrated circuit capping layers |
| JP4535629B2 (ja) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2003
- 2003-04-25 JP JP2003120807A patent/JP2003347302A/ja active Pending
- 2003-04-25 TW TW092109732A patent/TWI278963B/zh not_active IP Right Cessation
- 2003-04-25 GB GB0309476A patent/GB2390742B/en not_active Expired - Fee Related
- 2003-04-25 KR KR1020030026307A patent/KR101005434B1/ko not_active Expired - Lifetime
-
2010
- 2010-06-17 JP JP2010137862A patent/JP2010232676A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103840A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | ドライエツチング方法 |
| JPH04192527A (ja) * | 1990-11-27 | 1992-07-10 | Toshiba Corp | 半導体装置 |
| JPH11191556A (ja) * | 1997-12-26 | 1999-07-13 | Sony Corp | 半導体装置の製造方法および銅または銅合金パターンの形成方法 |
| JP2000058544A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
| JP2000195820A (ja) * | 1998-12-25 | 2000-07-14 | Sony Corp | 金属窒化物膜の形成方法およびこれを用いた電子装置 |
| JP2001185549A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2001313285A (ja) * | 2000-02-21 | 2001-11-09 | Hitachi Ltd | プラズマ処理装置及び試料の処理方法 |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007109736A (ja) * | 2005-10-11 | 2007-04-26 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US8344509B2 (en) | 2009-01-19 | 2013-01-01 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor device and semiconductor device |
| US8536706B2 (en) | 2009-01-19 | 2013-09-17 | Kabushiki Kaisha Toshiba | Method for fabricating semiconductor device and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2390742B (en) | 2006-07-19 |
| GB2390742A (en) | 2004-01-14 |
| KR20030084761A (ko) | 2003-11-01 |
| JP2010232676A (ja) | 2010-10-14 |
| TW200408055A (en) | 2004-05-16 |
| TWI278963B (en) | 2007-04-11 |
| GB0309476D0 (en) | 2003-06-04 |
| KR101005434B1 (ko) | 2011-01-05 |
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