KR101005434B1 - 신뢰성 개선을 위한 규화 구리 패시베이션 - Google Patents

신뢰성 개선을 위한 규화 구리 패시베이션 Download PDF

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Publication number
KR101005434B1
KR101005434B1 KR1020030026307A KR20030026307A KR101005434B1 KR 101005434 B1 KR101005434 B1 KR 101005434B1 KR 1020030026307 A KR1020030026307 A KR 1020030026307A KR 20030026307 A KR20030026307 A KR 20030026307A KR 101005434 B1 KR101005434 B1 KR 101005434B1
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South Korea
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copper
delete delete
dielectric layer
forming
silicide
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Korean (ko)
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KR20030084761A (ko
Inventor
브래드쇼로버트웨인
길케스다니엘
머천트사일레시맨신
라마파디팩에이.
스타이너커트조지
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에이저 시스템즈 인크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020030026307A 2002-04-26 2003-04-25 신뢰성 개선을 위한 규화 구리 패시베이션 Expired - Lifetime KR101005434B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13378202A 2002-04-26 2002-04-26
US10/133,782 2002-04-26

Publications (2)

Publication Number Publication Date
KR20030084761A KR20030084761A (ko) 2003-11-01
KR101005434B1 true KR101005434B1 (ko) 2011-01-05

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KR1020030026307A Expired - Lifetime KR101005434B1 (ko) 2002-04-26 2003-04-25 신뢰성 개선을 위한 규화 구리 패시베이션

Country Status (4)

Country Link
JP (2) JP2003347302A (enrdf_load_stackoverflow)
KR (1) KR101005434B1 (enrdf_load_stackoverflow)
GB (1) GB2390742B (enrdf_load_stackoverflow)
TW (1) TWI278963B (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028811B1 (ko) * 2003-12-29 2011-04-12 매그나칩 반도체 유한회사 반도체 소자의 듀얼 다마신 패턴 형성 방법
US7229911B2 (en) 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
JP2007109736A (ja) * 2005-10-11 2007-04-26 Nec Electronics Corp 半導体装置およびその製造方法
JP5582727B2 (ja) 2009-01-19 2014-09-03 株式会社東芝 半導体装置の製造方法及び半導体装置
US8884441B2 (en) * 2013-02-18 2014-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Process of ultra thick trench etch with multi-slope profile
CN115295722A (zh) * 2022-06-07 2022-11-04 昕原半导体(杭州)有限公司 Rram下电极结构及其形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192527A (ja) * 1990-11-27 1992-07-10 Toshiba Corp 半導体装置
JPH11191556A (ja) * 1997-12-26 1999-07-13 Sony Corp 半導体装置の製造方法および銅または銅合金パターンの形成方法
JP2000058544A (ja) * 1998-08-04 2000-02-25 Matsushita Electron Corp 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103840A (ja) * 1987-10-16 1989-04-20 Sanyo Electric Co Ltd ドライエツチング方法
US5447887A (en) * 1994-04-01 1995-09-05 Motorola, Inc. Method for capping copper in semiconductor devices
JP3661366B2 (ja) * 1997-09-04 2005-06-15 ソニー株式会社 半導体装置及びその製造方法
US6303505B1 (en) * 1998-07-09 2001-10-16 Advanced Micro Devices, Inc. Copper interconnect with improved electromigration resistance
JP2000195820A (ja) * 1998-12-25 2000-07-14 Sony Corp 金属窒化物膜の形成方法およびこれを用いた電子装置
JP2001185549A (ja) * 1999-12-24 2001-07-06 Toshiba Corp 半導体装置の製造方法
JP3643540B2 (ja) * 2000-02-21 2005-04-27 株式会社日立製作所 プラズマ処理装置
US6406996B1 (en) * 2000-09-30 2002-06-18 Advanced Micro Devices, Inc. Sub-cap and method of manufacture therefor in integrated circuit capping layers
JP4535629B2 (ja) * 2001-02-21 2010-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04192527A (ja) * 1990-11-27 1992-07-10 Toshiba Corp 半導体装置
JPH11191556A (ja) * 1997-12-26 1999-07-13 Sony Corp 半導体装置の製造方法および銅または銅合金パターンの形成方法
JP2000058544A (ja) * 1998-08-04 2000-02-25 Matsushita Electron Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
GB2390742B (en) 2006-07-19
GB2390742A (en) 2004-01-14
JP2003347302A (ja) 2003-12-05
KR20030084761A (ko) 2003-11-01
JP2010232676A (ja) 2010-10-14
TW200408055A (en) 2004-05-16
TWI278963B (en) 2007-04-11
GB0309476D0 (en) 2003-06-04

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