JP2003347279A5 - - Google Patents

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Publication number
JP2003347279A5
JP2003347279A5 JP2002151302A JP2002151302A JP2003347279A5 JP 2003347279 A5 JP2003347279 A5 JP 2003347279A5 JP 2002151302 A JP2002151302 A JP 2002151302A JP 2002151302 A JP2002151302 A JP 2002151302A JP 2003347279 A5 JP2003347279 A5 JP 2003347279A5
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JP
Japan
Prior art keywords
film
etching
forming
nitrogen
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002151302A
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English (en)
Japanese (ja)
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JP2003347279A (ja
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Publication date
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Priority to JP2002151302A priority Critical patent/JP2003347279A/ja
Priority claimed from JP2002151302A external-priority patent/JP2003347279A/ja
Publication of JP2003347279A publication Critical patent/JP2003347279A/ja
Publication of JP2003347279A5 publication Critical patent/JP2003347279A5/ja
Pending legal-status Critical Current

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JP2002151302A 2002-05-24 2002-05-24 半導体装置の製造方法 Pending JP2003347279A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002151302A JP2003347279A (ja) 2002-05-24 2002-05-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002151302A JP2003347279A (ja) 2002-05-24 2002-05-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003347279A JP2003347279A (ja) 2003-12-05
JP2003347279A5 true JP2003347279A5 (enrdf_load_html_response) 2005-09-29

Family

ID=29768934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002151302A Pending JP2003347279A (ja) 2002-05-24 2002-05-24 半導体装置の製造方法

Country Status (1)

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JP (1) JP2003347279A (enrdf_load_html_response)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006313833A (ja) * 2005-05-09 2006-11-16 Seiko Epson Corp 強誘電体キャパシタの形成方法、強誘電体キャパシタおよび電子デバイス
DE102005035772A1 (de) * 2005-07-29 2007-02-01 Advanced Micro Devices, Inc., Sunnyvale Technik zum effizienten Strukturieren einer Höckerunterseitenmetallisierungsschicht unter Anwendung eines Trockenätzprozesses
US7399646B2 (en) * 2005-08-23 2008-07-15 International Business Machines Corporation Magnetic devices and techniques for formation thereof
JPWO2007142172A1 (ja) * 2006-06-09 2009-10-22 日本電気株式会社 多層配線製造方法と多層配線構造と多層配線製造装置
JP2009064935A (ja) * 2007-09-06 2009-03-26 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2009295859A (ja) * 2008-06-06 2009-12-17 Oki Semiconductor Co Ltd 半導体装置および半導体装置の製造方法
JP5684254B2 (ja) * 2010-06-14 2015-03-11 ルネサスエレクトロニクス株式会社 半導体装置
WO2018220973A1 (ja) * 2017-05-30 2018-12-06 東京エレクトロン株式会社 エッチング方法
JP7109165B2 (ja) 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法

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