JP2003332553A - 撮影アレイ及びその製造方法 - Google Patents

撮影アレイ及びその製造方法

Info

Publication number
JP2003332553A
JP2003332553A JP2003098712A JP2003098712A JP2003332553A JP 2003332553 A JP2003332553 A JP 2003332553A JP 2003098712 A JP2003098712 A JP 2003098712A JP 2003098712 A JP2003098712 A JP 2003098712A JP 2003332553 A JP2003332553 A JP 2003332553A
Authority
JP
Japan
Prior art keywords
layer
electrode
tft
diode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003098712A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003332553A5 (enExample
Inventor
Ji Ung Lee
チー・アン・リー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2003332553A publication Critical patent/JP2003332553A/ja
Publication of JP2003332553A5 publication Critical patent/JP2003332553A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
JP2003098712A 2002-04-03 2003-04-02 撮影アレイ及びその製造方法 Pending JP2003332553A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/116,185 US6777685B2 (en) 2002-04-03 2002-04-03 Imaging array and methods for fabricating same
US10/116,185 2002-04-03

Publications (2)

Publication Number Publication Date
JP2003332553A true JP2003332553A (ja) 2003-11-21
JP2003332553A5 JP2003332553A5 (enExample) 2008-07-24

Family

ID=28041078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003098712A Pending JP2003332553A (ja) 2002-04-03 2003-04-02 撮影アレイ及びその製造方法

Country Status (3)

Country Link
US (1) US6777685B2 (enExample)
EP (1) EP1351310A3 (enExample)
JP (1) JP2003332553A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015531164A (ja) * 2012-07-26 2015-10-29 北京京東方光電科技有限公司 センサーの製造方法
JP2016213432A (ja) * 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784434B2 (en) * 2002-06-25 2004-08-31 General Electric Company Imaging array and method for manufacturing same
US20040246355A1 (en) * 2003-06-06 2004-12-09 Ji Ung Lee Storage capacitor array for a solid state radiation imager
US7081628B2 (en) * 2003-11-10 2006-07-25 Ge Medical Systems Global Technology Company, Llc Spatially patterned light-blocking layers for radiation imaging detectors
US7259377B2 (en) * 2005-12-15 2007-08-21 General Electric Company Diode design to reduce the effects of radiation damage
US20070272872A1 (en) * 2006-05-24 2007-11-29 Bruker Axs, Inc. X-ray detector with photodetector embedded in scintillator
KR101571045B1 (ko) * 2008-12-26 2015-11-24 삼성디스플레이 주식회사 Ｘ선 검출기용 박막 트랜지스터 어레이 기판 및 그 제조 방법
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
KR20120027708A (ko) * 2010-09-13 2012-03-22 삼성모바일디스플레이주식회사 Ｘ-선 검출기 패널
CN102790064B (zh) * 2012-07-26 2015-04-08 北京京东方光电科技有限公司 一种传感器及其制造方法
CN102790062B (zh) * 2012-07-26 2016-01-27 北京京东方光电科技有限公司 一种传感器的制造方法
CN102790066B (zh) * 2012-07-26 2016-12-21 北京京东方光电科技有限公司 一种传感器及其制造方法
CN103560135B (zh) * 2013-11-14 2015-12-02 北京京东方光电科技有限公司 一种x射线传感器的阵列基板及其制造方法
TWI538177B (zh) * 2014-04-15 2016-06-11 友達光電股份有限公司 光感應裝置及其製作方法
US9941324B2 (en) * 2015-04-28 2018-04-10 Nlt Technologies, Ltd. Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus
TWI613804B (zh) 2017-09-04 2018-02-01 友達光電股份有限公司 光感測裝置
CN108615826B (zh) * 2018-05-04 2019-10-25 京东方科技集团股份有限公司 一种有机发光二极管显示基板及其制作方法、显示装置
KR102760852B1 (ko) * 2019-12-13 2025-01-24 엘지디스플레이 주식회사 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판과 엑스레이 검출기 및 그 제조 방법

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725890A (en) 1986-07-15 1988-02-16 Ovonic Imaging Systems, Inc. Flexible array of photosensitive elements
US4739414A (en) 1986-07-15 1988-04-19 Ovonic Imaging Systems, Inc. Large area array of thin film photosensitive elements for image detection
JPS63226062A (ja) * 1987-03-16 1988-09-20 Fujitsu Ltd イメ−ジセンサ
US4889983A (en) 1987-11-24 1989-12-26 Mitsubishi Denki Kabushiki Kaisha Image sensor and production method thereof
JPH0423470A (ja) 1990-05-18 1992-01-27 Fuji Xerox Co Ltd イメージセンサ
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
JP3382300B2 (ja) * 1993-05-21 2003-03-04 キヤノン株式会社 画像表示装置
US5399884A (en) 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
US5587591A (en) 1993-12-29 1996-12-24 General Electric Company Solid state fluoroscopic radiation imager with thin film transistor addressable array
US5435608A (en) 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
EP0778983B1 (en) 1994-07-27 2000-05-31 1294339 Ontario, Inc. Radiation imaginging system
US5532180A (en) 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5614727A (en) 1995-06-06 1997-03-25 International Business Machines Corporation Thin film diode having large current capability with low turn-on voltages for integrated devices
US6124606A (en) * 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
US5631473A (en) 1995-06-21 1997-05-20 General Electric Company Solid state array with supplemental dielectric layer crossover structure
EP0762505A3 (en) 1995-08-28 1999-02-03 Canon Kabushiki Kaisha Apparatus for detecting radiation and method for manufacturing such apparatus
US5610403A (en) 1995-09-05 1997-03-11 General Electric Company Solid state radiation imager with gate electrode plane shield wires
US5610404A (en) 1995-09-05 1997-03-11 General Electric Company Flat panel imaging device with ground plane electrode
US5648654A (en) 1995-12-21 1997-07-15 General Electric Company Flat panel imaging device with patterned common electrode
US5777355A (en) 1996-12-23 1998-07-07 General Electric Company Radiation imager with discontinuous dielectric
US5920070A (en) 1996-11-27 1999-07-06 General Electric Company Solid state area x-ray detector with adjustable bias
US5736732A (en) 1996-12-23 1998-04-07 General Electric Company Induced charge prevention in semiconductor imaging devices
US5838054A (en) 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
JP3784491B2 (ja) * 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
US6167110A (en) 1997-11-03 2000-12-26 General Electric Company High voltage x-ray and conventional radiography imaging apparatus and method
US6031234A (en) 1997-12-08 2000-02-29 General Electric Company High resolution radiation imager
US6025599A (en) 1997-12-09 2000-02-15 Direct Radiography Corp. Image capture element
GB9726511D0 (en) * 1997-12-13 1998-02-11 Philips Electronics Nv Thin film transistors and electronic devices comprising such
US6075248A (en) * 1998-10-22 2000-06-13 Direct Radiography Corp. Direct radiographic imaging panel with shielding electrode
US6243441B1 (en) 1999-07-13 2001-06-05 Edge Medical Devices Active matrix detector for X-ray imaging
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015531164A (ja) * 2012-07-26 2015-10-29 北京京東方光電科技有限公司 センサーの製造方法
JP2016213432A (ja) * 2015-04-28 2016-12-15 Ｎｌｔテクノロジー株式会社 半導体素子、半導体素子の製造方法、フォトダイオードアレイおよび撮像装置

Also Published As

Publication number Publication date
US6777685B2 (en) 2004-08-17
EP1351310A3 (en) 2003-12-17
EP1351310A2 (en) 2003-10-08
US20030201396A1 (en) 2003-10-30

Similar Documents

Publication Publication Date Title
US6740884B2 (en) Imaging array and methods for fabricating same
US6777685B2 (en) Imaging array and methods for fabricating same
US5525527A (en) Process for producing a solid state radiation detector
US5435608A (en) Radiation imager with common passivation dielectric for gate electrode and photosensor
US5399884A (en) Radiation imager with single passivation dielectric for transistor and diode
US6607935B2 (en) Method for fabricating array substrate for X-ray detector
JP5366400B2 (ja) 連続した膜を使用する集積されたｍｉｓ光電性デバイス
JP4600964B2 (ja) ゲーテッドフォトダイオードを有する固体イメージャ及びその製造方法
KR100530682B1 (ko) 감광픽셀들의어레이
WO2001033634A1 (en) Imager with reduced fet photoresponse and high integrity contact via
US7307301B2 (en) Imaging array
JP4559036B2 (ja) 撮影アレイ及びその製造方法
US6784434B2 (en) Imaging array and method for manufacturing same
JPH0783098B2 (ja) 光イメ−ジ検出器の製造方法及びこの製造方法により製造される２次元マトリクス検出器
JP4478215B2 (ja) 耐腐食性イメージング装置
US6617561B1 (en) Low noise and high yield data line structure for imager
JP2003031786A (ja) 光検出装置および放射線検出装置
JP2003332559A (ja) 固体撮像装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080606

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090318

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090324

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090915