JP2003332542A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reliably and efficiently manufacture a reliable semiconductor device mounted with solid-state image pickup elements. <P>SOLUTION: A method of manufacturing the semiconductor device comprises steps of: bonding the plurality of image pickup elements 10 in line at prescribed intervals in such a way that a photo detecting face of each image pickup element is exposed on one face of a substrate 30; coating an exposed photo detecting region of each solid-state image pickup element with a flexible protective film 36 which is formed individually; pressure-holding the solid-state image pickup element coated with the protective film, together with the substrate, by a metal mold having flat pressure- holding faces, and then filling a space surrounded by the pressure-holding faces of the metal mold, the protective film, and the adjacent solid-state image pickup elements, with a sealing material 42 to resin-mold the image pickup element and the substrate, and thereafter, removing the protective film 36 from the photo detecting face of the solid-state image pickup element 10; bonding a translucent plate 46 over the entire surface of the substrate so as to cover the exposed photo detecting face of each solid- state image pickup element via the sealing material; and cutting the substrate between the adjacent solid-state image pickup elements into individual semiconductor devices. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device,
More specifically, the present invention relates to a semiconductor device equipped with a solid-state image sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 11 shows a basic structure of a semiconductor device having a solid-state image sensor. 10 is a solid-state image sensor, 12
Is a package in which the solid-state imaging device 10 is mounted, and 14 is a glass lid as a light transmission window mounted in the opening of the package 12. The solid-state imaging device 10 is connected to a wiring pattern formed on the inner surface of the package 12 by wire bonding, and the solid-state imaging device 10 is controlled via an external connection terminal 16 provided electrically connected to the wiring pattern.

By the way, recently, as a semiconductor device having a solid-state image sensor mounted thereon, circuit components such as a solid-state image sensor 10 and a semiconductor element 20 for a processor as shown in FIG. 12 are modularized and mounted on a circuit board 18. The products have come into use. The glass lid 14 covers the solid-state image sensor 10 by being supported by a dam (for example, a frame body made of a resin material) 22 provided on the periphery of the surface of the circuit board 18 on which the solid-state image sensor 10 is mounted. The solid-state image sensor 1
In the semiconductor device in which 0 is mounted, it is necessary to provide a gap between the light receiving surface of the solid-state image sensor 10 and the glass lid 14. In the semiconductor device shown in FIGS.
In both cases, the glass lid 14 is provided so as to be separated from the light receiving surface of the solid-state image sensor 10.

[0004]

In the modularized board shown in FIG. 12, since the solid-state image sensor 10 is mounted on the circuit board 18, the solid-state image sensor 10 is mounted on the circuit board 18.
It is necessary to accurately position and mount. This is because in order to obtain an accurate image with the solid-state image sensor 10, the solid-state image sensor 10 must be accurately arranged in the optical system such as an optical lens. Therefore, like the modularized board, the solid-state imaging device 1 is mounted on the circuit board 18.
The method of directly mounting 0 has a problem that the assembly cost is high. There is also a problem that foreign matter such as dust adheres to the light-receiving surface of the solid-state imaging device 10 during an operation such as mounting the solid-state imaging device 10 on the circuit board 18, which causes a defect. Further, in the case of a semiconductor device in which the solid-state imaging device 10 is sealed by the glass lid 14 as shown in FIG. 11, the glass lid 14 must be individually joined to the package 12 and assembled, which is a point of productivity. I had a problem with.

Therefore, the present invention has been made to solve these problems, and an object of the present invention is to make it possible to easily mass-produce a semiconductor device having a solid-state image sensor and to manufacture it at low cost. (EN) Provided are a semiconductor device and a method of manufacturing the same which facilitates an operation such as mounting on a circuit board or the like.

[0006]

In order to achieve the above object, the present invention has the following constitution. That is, in a semiconductor device in which a solid-state image sensor is sealed by a light-transmitting window and mounted, a peripheral edge portion of the solid-state image sensor other than the light-receiving surface is covered with a frame-shaped sealing material so as to surround the solid-state image sensor. And a light transmitting window is separated from the light receiving surface and a peripheral portion is adhered to and supported by the encapsulating material, and the solid-state imaging device and an external connection terminal provided on the mounting surface side of the encapsulating material are electrically connected. It is characterized in that they are connected to each other. Semiconductor device. Further, while protruding in a protrusion shape on the mounting surface side of the encapsulant, the external connection terminal and the solid-state imaging device formed by exposing the metal layer on the outer surface of the protrusion,
The semiconductor device in which the inner surface of the metal layer and the solid-state imaging device are electrically connected by wire bonding is preferable in that it can be formed thin and compact.

Further, in a method of manufacturing a semiconductor device in which a solid-state image pickup device is sealed by a light transmission window and mounted, a plurality of solid-state image pickup devices are provided on one surface of a base material with a light receiving surface as an exposed surface side. The steps of aligning and joining at intervals, the steps of covering the light-receiving region on the exposed surface of each solid-state image sensor with a flexible protective film formed on each individual piece, and the solid film coated with the protective film. The imaging element is clamped together with the base material by a mold having a flat clamping surface, and a sealing material is filled in a cavity surrounded by the clamping surface of the mold, the protective film and the adjacent solid-state imaging element. After resin molding, the step of removing the protective film from the light receiving surface of the solid-state image sensor, and the entire surface of the base material so as to cover the exposed light-receiving surface of each solid-state image sensor through the molded sealing material. The process of adhering the translucent plate over Characterized in that along between the solid-state imaging device which includes a step of cutting the semiconductor device of the pieces.
Further, as a base material for mounting the solid-state image sensor, a base material having a concave portion having a metal layer formed on the inner surface in the vicinity of the element mount portion is used, and the solid-state image sensor exposed to the element mount portion of the base material is exposed. After the step of covering the surface with a protective film, the step of wire-bonding the solid-state image sensor and the metal layer on the inner surface of the recess, and the step of adhering the light-transmitting plate, the base material is dissolved and removed to remove the metal. A step of forming a protruding external connection terminal whose layer is exposed on the outer surface.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is an explanatory view showing a manufacturing process of an embodiment of a method for manufacturing a semiconductor device according to the present invention. FIG. 1 (a) shows a solid-state image sensor 10 formed by dicing a wafer into individual pieces as a base material 30.
It is in a state of being bonded (die bonding) to. In Figure 2,
FIG. 3 is a plan view showing a state where the solid-state imaging device 10 is bonded to one surface of the base material 30. As shown in the figure, the solid-state imaging device 10 is aligned in the vertical and horizontal directions at predetermined intervals and is bonded to the base material 30. It should be noted that FIG. 1 shows only one section in which the solid-state imaging device 10 is mounted on the base material 30 for the sake of explanation. The solid-state imaging device 10 is bonded to the base material 30 so that the light receiving surface is on the exposed surface side (upper surface side).

In the present embodiment, the base material 30 is used as a support for supporting the solid-state image pickup device 10. However, as shown in FIG. A concave portion 32 for forming a connection protrusion for external connection (which serves as an external connection terminal) is formed on the surface on which is mounted. FIG. 3 shows a planar arrangement of the recesses 32 formed on the surface of the base material 30. As shown in the figure, the concave portion 32 is arranged so as to surround the solid-state imaging device 10 with the solid-state imaging device 10 mounted on the base material 30. That is, the recess 32 is formed in the vicinity of the element mounting portion of the solid-state image pickup device 10 so as to be wire-bondable to the solid-state image pickup device 10. This recess 3
2 is formed in advance on the base material 30 by etching or the like before the solid-state imaging device 10 is bonded to the base material 30.

FIG. 4 is an enlarged view of the recess 32. As shown, the bottom surface and the inner surface of the recess 32 are covered with the metal layer 34. The metal layer 34 is a portion that becomes a surface exposed as an external connection terminal, and has required weather resistance,
It is formed of a metal that has a required wire bonding property and is not dissolved by an etching solution that chemically dissolves and removes the base material 30. In the present embodiment, the base material 30
Copper was used as the material, and gold plating and nickel plating were performed in this order to form the metal layer 34. As the metal layer 34,
In addition to this, palladium or the like can be used.

After the solid-state image sensor 10 is bonded to the base material 30, a protective film 36 is attached to the light-receiving surface of the solid-state image sensor 10 (FIG. 1 (b)). FIG. 5 is a plan view showing a state in which the protective film 36 is attached to the light receiving surface of the solid-state image sensor 10. The protective film 36 is wider than the light receiving surface of the solid-state imaging device 10 and is attached to the inside of the arrangement region of the electrode terminals 11 so as not to interfere with the electrode terminals 11 arranged on the periphery of the solid-state imaging device 10. The protective film 36 is intended to protect the light receiving surface of the solid-state image sensor 10, and is made of a material having a certain adhesiveness and flexibility.

In this embodiment, a silicone resin having an adhesive property is used as the protective film 36. Since the silicone resin is highly flexible, it can be attached without damaging the light receiving surface of the solid-state imaging device 10. The operation of sticking the protective film 36 to the solid-state image sensor 10 is performed by sticking the protective film 36 one by one to the light-receiving surface of each solid-state image sensor 10 arranged on the base material 30. In the case of the protective film 36 made of an adhesive silicone resin, the protective film 36 can be easily attached by pressing the protective film 36 against the light receiving surface of each solid-state imaging device 10.

After the protective film 36 is attached to the light receiving surface of the solid-state image sensor 10, the solid-state image sensor 10 and the base material 30 are connected by wire bonding (FIG. 1 (c)). During wire bonding, the wire loop shape is set so that the top of the bonding wire 40 does not exceed the upper surface of the protective film 36. FIG. 6 shows a plan view of a state in which the solid-state imaging device 10 and the base material 30 are wire-bonded. The bonding wire 40 has one end connected to the electrode terminal 11 of the solid-state imaging device 10 and the other end connected to the bottom surface of the recess 32 provided in the base material 30. Since the metal layer 34 is provided on the inner surface of the recess 32, the other end of the bonding wire 40 has the recess 32.
Internally bonded to metal layer 34. By using a metal having a good wire bonding property for the metal layer 34,
The bonding wire 40 can be reliably connected to the metal layer 34.

After the solid-state image pickup device 10 and the recess 32 are wire-bonded, the base material 30 is collectively resin-molded by using a mold to resin-mold the sealing material for adhering the light transmitting window. FIG. 1D shows a state in which the sealing material 42 is molded by resin molding using a mold. The sealing material 42 is filled in a portion surrounded by the side surface of the protective film 36 and the surface of the base material 30 so as to seal the bonding wire 40. FIG. 7 shows a state in which the sealing material 42 is molded by resin molding using a mold. In resin molding using a mold,
The base material 30 to which the protective film 36 is attached is used as the lower mold 50a and the upper mold 50.
It is clamped in the thickness direction with b, and the sealing material 42 is filled in the void portion surrounded by the lower mold 50a and the upper mold 50b at the side of the protective film 36 with the resin molding.

The lower mold 50a and the upper mold 50b clamp the base material 30 having the protective film 36 on the light receiving surface of the solid-state image pickup device 10, whereby the solid-state image pickup device 10 is pinched by the protective film 36. The light-receiving surface of the solid-state image sensor 10 has a protective film 36.
The sealing material 42 is molded in a state of being shielded by. By covering the light-receiving surface of the solid-state imaging device 10 with the protective film 36, it is possible to prevent the sealing material 42 from entering the light-receiving surface of the solid-state imaging device 10 and perform resin molding. In addition,
Since the top of the bonding wire 40 is set lower than the upper surface of the protective film 36, the bonding wire 40 is sealed by the sealing material 42 without contacting the mold. The pressing surface of the lower mold 50a and the upper mold 50b is formed into a flat surface, and in the state where the sealing material 42 is molded, the upper surface of the sealing material 42 that is filled and molded around each solid-state imaging device 10. Are formed on the same height surface (same plane).

In the method of manufacturing a semiconductor device according to the present invention, a material having flexibility such as silicone resin is used as the protective film 36 because the protective film 36 can be resin-molded even if the protective film 36 is compressed to some extent during resin molding. To do so. The thickness of the protective film 36 may be appropriately selected. For example, when the thickness of the base material 30 is 0.07 mm, the solid-state imaging device 1
0 is 0.3 mm, the thickness of the protective film 36 is set to 0.
3 mm, 0.4 mm, and 0.5 mm, and the distance between the clamp surfaces of the lower mold 50a and the upper mold 50b during clamping is 0.67 m.
When the sealing material 42 was resin-molded as m, burr of the sealing material did not occur in any case, and a suitable resin molding was possible.

The thickness of the protective film 36 is 0.4 mm and 0.5 m.
In the case of m, the protective film 36 is compressed, and the protective film 36 slightly juts out laterally during resin molding. Therefore, when the protective film 36 returns to the original thickness after resin molding, a slight gap is formed between the side surface of the protective film 36 and the molded sealing material 42. When the thickness of the solid-state imaging device 10 or the thickness of the base material 30 varies, a method of attaching the flexible protective film 36 to the light-receiving surface of the solid-state imaging device 10 and resin-molding the sealing material 42 is performed. , Capable of absorbing variations in product thickness,
It is effective in that it is possible to reliably prevent the sealing material 42 from entering the light-receiving surface of the solid-state imaging device 10 as a burr by compressing the protective film 36 slightly and pinching it. In addition, since a slight gap is formed between the side surface of the protective film 36 and the sealing material 42 after the resin molding, the protective film 36 is sealed when the protective film 36 is peeled from the solid-state imaging device 10. It also has an effect of preventing the peeling off due to the close contact with the material 42.

FIG. 1E shows a state in which the protective film 36 is removed from the light receiving surface of the solid-state image pickup device 10 after the sealing material 42 is resin-molded. The protective film 36 can be removed by peeling it from the surface of the solid-state imaging device 10 by adsorbing air with the suction pad. By removing the protective film 36, the light receiving surface of the solid-state imaging device 10 is exposed to the outside, and the solid-state imaging device 10 is exposed.
The peripheral edge of the light-receiving surface is surrounded by the sealing material 42 formed into a dam shape having a predetermined thickness. Reference numeral 44 denotes a recess formed on the light receiving surface of the solid-state image sensor 10 by the sealing material 42. FIG. 8 shows a plan view with the protective film 36 removed. The light-receiving surface of the solid-state image sensor 10 is exposed, and the light-receiving surface of the solid-state image sensor 10 is surrounded by the sealing material 42 molded in a frame shape. The protective film 36 peeled off and removed from the solid-state imaging device can be used repeatedly, and can be commonly used for different kinds of solid-state imaging devices.

In FIG. 1 (f), after removing the protective film 36,
The light transmitting plate 46 for the light transmitting window is provided in the recess 44 on the upper surface of the sealing material 42.
It is in a state of being collectively attached over the entire surface where the is formed. A large number of solid-state imaging devices 10 are mounted on the base material 30, and a sealing material 42 is filled between adjacent solid-state imaging devices 10. FIG. 9A shows a state in which the transparent plate 46 is bonded to the base material 30. As shown in the figure, the transparent plate 46 is bonded to the entire surface of the base material 30 at once. When adhering the transparent plate 46, work is performed in a clean environment so that dust or the like does not adhere to the light receiving surface of the solid-state image sensor 10. The transparent plate 46 is not limited to a transparent glass plate, but a transparent resin plate such as an acrylic resin can be used.

FIG. 9B shows a state in which the base material 30 is chemically dissolved and then removed. By removing the copper of the base material 30 by etching, the region where the recess 32 is filled with the sealing material 42 projects like a bump, and is formed as the external connection terminal 48 for external connection. The metal layer 34 formed on the inner surface of the recess 32 is exposed on the outer surface of the external connection terminal 48, and the other end of the bonding wire 40 is connected to the metal layer 34, so that the solid-state imaging device 10 and each external connection terminal 48 are connected. It will be in an electrically connected state. In the present embodiment, since the metal layer 34 is formed by gold plating and nickel plating, the metal layer 34 is not dissolved by the etching solution that dissolves the base material 30 made of copper, and only the base material 30 is selectively dissolved. Thus, the external connection terminal 48 in which the metal layer 34 is exposed on the outer surface can be formed.

Next, with the translucent plate 46 adhered to the entire surface of the base material 30 all at once, the light is transmitted along the outline of the individual semiconductor devices in the middle of the adjacent solid-state image pickup devices 10. By cutting the optical plate 46 and the molded sealing material 42, it is possible to obtain an individual semiconductor device on which the solid-state imaging device 10 is mounted. In FIG. 9B, the position where the line A is cut into individual pieces is shown. FIG. 1G shows a sectional view of a semiconductor device formed in pieces. The peripheral portion of the light transmitting window 46a is the sealing material 42.
The light receiving surface of the solid-state image sensor 10 is sealed by being bonded to the. The light transmitting window 46a is supported by the sealing material 42 so as to be separated from the light receiving surface of the solid-state imaging device 10. External connection terminals 48 are arranged around the lower surface side (mounting surface side) of the semiconductor device, and the external connection terminals 48 are electrically connected to the solid-state imaging device 10 via bonding wires 40. This semiconductor device can be mounted by bonding the external connection terminal 48 to the connection terminal of the mounting board. Since the solid-state imaging device 10 is sealed and protected by the light transmitting window 46a, the semiconductor device can be easily aligned and mounted on the mounting substrate.

As described above, according to the method for manufacturing a semiconductor device of this embodiment, a large number of solid-state image pickup devices 10 are arranged on the base material 30, and the light-receiving surface of the solid-state image pickup device 10 has a flexible protective film. Then, the encapsulating material 42 is collectively resin-molded with respect to a large number of solid-state imaging devices 10, and the translucent plate 46 is collectively adhered to finally separate the solid-state imaging devices. It is possible to easily mass-produce semiconductor devices equipped with elements.

In the above embodiment, as a method for electrically connecting the solid-state image pickup device 10 and the mounting connection terminals, the external connection terminals 48 protruding like bumps are provided on the outer surface of the sealing material 42. Although the solid-state imaging device 10 and the external connection terminal 48 are electrically connected, the method of electrically connecting the solid-state imaging device 10 and the mounting connection terminal is not limited to the method of the above embodiment. . For example, in FIG.
It is a structural example of a semiconductor device formed using a BGA (Ball Grid Array) type wiring substrate. In the figure, 50 is a wiring board on which the solid-state imaging device 10 is mounted, and 52 is an external connection terminal. In this embodiment, the solid-state imaging device 10 and the external connection terminal 52, which is a connection terminal for mounting, are the solid-state imaging device 1
0 and the wiring pattern 54 provided on the surface of the wiring board 50 are wire-bonded, and the wiring pattern 54 and the external connection terminal 52 are electrically connected via the via 56.

A semiconductor device in which the solid-state image sensor 10 is mounted on this wiring board can also be manufactured in exactly the same manner as the manufacturing method shown in FIG. That is, in the case of the present embodiment, the solid-state image sensor 10 is aligned and arranged on the wiring board for multi-cavity formation in which the predetermined wiring pattern 54 and the via 56 are formed in the predetermined repeated arrangement.
After the protective film 36 is applied to the light receiving surface of 0 and the solid-state imaging device 10 and the wiring pattern 54 provided on the wiring substrate are connected by wire bonding, the sealing material 42 is resin-molded by collective resin molding using a mold. The transparent plate 46 is molded and the sealing material 4 is formed.
After being adhered to the upper surface side of 2, the translucent plate 46, the resin material, and the wiring board are cut along the outline of individual semiconductor devices to obtain the semiconductor device shown in FIG.

The method of mounting the solid-state image pickup device 10 on the wiring board 50 and electrically connecting it to the wiring pattern 54 is not limited to the method of wire bonding described above, but the solid-state image pickup device 10 is also connected by flip-chip connection. A method of mounting on the substrate 50 is also possible. In the case of flip chip connection, the light receiving surface of the element is provided on the back surface side of the mounting surface (bonding surface) of the element. As described above, various methods are possible for the method of electrically connecting the solid-state image sensor 10 and the mounting connection terminal, and the method is not limited to the above-described methods.

As shown in FIG. 1 (g) or FIG. 10, in the individual semiconductor device on which the solid-state image sensor 10 is mounted, the solid-state image sensor 10 is damaged or dust is attached to the light-receiving surface of the solid-state image sensor 10. It is possible to provide a semiconductor device having high quality without causing any trouble. Further, since the solid-state image sensor 10 is protected by the light transmitting window 46a, the light receiving device and the like can be assembled in a normal working environment,
It is possible to suppress the generation of defective products. Further, since the sealing material 42 is provided in a frame shape on the peripheral portion of the solid-state imaging device 10 excluding the light-receiving surface, and the light-transmissive window 46a is bonded to the sealing material 42, the semiconductor mounting the solid-state imaging device 10 thereon. It is possible to provide the device as the most downsized product. In particular, the semiconductor device shown in FIG. 1 (g) does not require a substrate for supporting the solid-state imaging device 10, so that the semiconductor device can be effectively thinned.

[0027]

As described above, the semiconductor device according to the present invention is provided with the solid-state image pickup device sealed by the light transmitting window, so that the assembly work such as mounting on the mounting board can be easily performed. This makes it possible to avoid product defects due to dust adhering to the light-receiving surface of the solid-state image sensor. Further, since the semiconductor device according to the present invention is formed in a small size, it can be suitably adapted to the miniaturization of the light receiving device. Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to obtain a remarkable effect that a semiconductor device including a solid-state image pickup element can be surely and highly reliable mounted.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a method for manufacturing a semiconductor device according to the present invention.

FIG. 2 is a plan view showing a state in which a solid-state image sensor is bonded to a base material.

FIG. 3 is an enlarged plan view showing a state in which a solid-state image sensor is bonded to a base material.

FIG. 4 is an enlarged cross-sectional view showing a configuration of a recess provided in a base material.

FIG. 5 is a plan view showing a state in which a protective film is attached to the solid-state image sensor.

FIG. 6 is a plan view showing a state in which wire bonding is performed between the solid-state imaging device and the recess of the base material.

FIG. 7 is a cross-sectional view showing a main part in a state where resin is collectively molded with a mold.

FIG. 8 is a plan view showing a state where the protective film is peeled off and removed from the light receiving surface of the solid-state image sensor.

FIG. 9 is an explanatory diagram showing a process in a state where a transparent plate is bonded to a base material.

FIG. 10 is a cross-sectional view showing another configuration of a semiconductor device equipped with a solid-state image sensor.

FIG. 11 is a cross-sectional view showing a configuration of a conventional semiconductor device equipped with a solid-state image sensor.

FIG. 12 is a cross-sectional view showing a configuration of a conventional semiconductor device equipped with a solid-state image sensor.

[Explanation of symbols]

10 Solid-state image sensor 11 electrode terminals 12 packages 14 glass lid 16 External connection terminal 18 circuit board 20 Semiconductor element 22 dam 30 base material 32 recess 34 Metal layer 36 Protective film 40 bonding wire 42 sealing material 46 translucent plate 46a Light transmission window 48 External connection terminal 50 wiring board 52 External connection terminal 54 wiring pattern 56 vias

Claims (4)

[Claims] 1. A semiconductor device in which a solid-state image sensor is sealed by a light-transmissive window and mounted, wherein a peripheral portion of the solid-state image sensor except the light-receiving surface is sealed in a frame shape so as to surround the solid-state image sensor. An external connection terminal provided on the mounting surface side of the solid-state image sensor and the sealing material, with a light-transmitting window spaced from the light-receiving surface and a peripheral edge bonded and supported by the sealing material. A semiconductor device characterized in that and are electrically connected to each other. 2. An external connection terminal and a solid-state image sensor, which project in the form of protrusions on the mounting surface side of the encapsulant and have a metal layer exposed on the outer surface of the protrusion, and the solid-state image sensor and the inner surface of the metal layer. 2. The semiconductor device according to claim 1, wherein the image pickup element is wire-bonded and electrically connected. 3. A method of manufacturing a semiconductor device, in which a solid-state image sensor is sealed by a light-transmitting window and mounted, wherein a plurality of solid-state image sensors are provided on one surface of a base material with a light receiving surface as an exposed surface side. The steps of aligning and joining at intervals, the steps of covering the light-receiving region of the exposed surface of each solid-state image sensor with a flexible protective film formed on each piece, and the solid film with the protective film applied. An image pickup device together with the base material,
The solid-state imaging device is clamped by a mold having a flat clamping surface, and a resin is molded by filling a sealing material in a space surrounded by the clamping surface of the mold, the protective film and an adjacent solid-state imaging device, and then resin molding. A step of removing the protective film from the light-receiving surface, and a step of adhering a light-transmissive plate over the entire surface of the base material so as to cover the exposed light-receiving surface of each solid-state image sensor through the molded sealing material. And a step of cutting the semiconductor device into individual semiconductor devices along adjacent solid-state image pickup devices. 4. A solid-state imaging device in which a concave portion having a metal layer formed on its inner surface is provided in the vicinity of the element mounting portion is used as the substrate for mounting the solid-state imaging element, and the substrate is joined to the element mounting portion. After the step of covering the exposed surface of the element with a protective film, the step of wire bonding the solid-state imaging element and the metal layer on the inner surface of the recess, and the step of adhering the light-transmitting plate, the base material is dissolved and removed. ,
4. The method of manufacturing a semiconductor device according to claim 3, further comprising the step of forming a protruding external connection terminal in which the metal layer is exposed on the outer surface.