JP4618639B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention includes a method for manufacturing a semiconductor device, in particular, an imaging semiconductor device including an imaging semiconductor element used for an optical module suitable for mounting on a digital video camera, a mobile phone, or the like, or a photoelectric conversion element used for an optical disk device. The present invention relates to a method for manufacturing a photodetection semiconductor device.

  In recent years, optical modules to be installed in digital video cameras, mobile phones, etc. have been increasing in size and size, and in particular, mobile phones are equipped with camera functions. As a result, as optical modules including lenses and packages, There is an increasing demand for downsizing and thinning. Along with this, an imaging apparatus that includes a lens and is reduced in size and thickness has been proposed (see Patent Document 1 and Patent Document 2).

JP 2000-269472 A JP 2003-219284 A

  In addition, recently, optical modules have appeared in consumer equipment such as mobile phones, digital cameras, and PC cameras, and automobiles equipped with a camera on the vehicle body for front / rear / left / right confirmation. Therefore, in addition to demands for small size and thinness, there is an increasing demand for reliability such as environmental resistance, and in order to meet such demand, an optical module having the following structure mounted with an imaging semiconductor element has been implemented. Yes.

  As shown in FIG. 11, the optical module 15 mounts the imaging semiconductor element 18 connected by the wire 17 on the circuit board 16, and further attaches the lens holder 20 to which the lens 19 is attached on the circuit board 16, The imaging semiconductor element 18 is sealed.

  In addition, as shown in FIG. 12, an imaging semiconductor element 24 wire-bonded with a wire 23 is mounted on a circuit board 22 having a cavity 22a made by molding ceramics or resin, and the cavity 22a is There is also implemented an optical module in which a lens holder 27 sealed with a glass plate 25 and attached with a lens 26 is attached so as to surround the hollow portion 22a.

  Further, as shown in FIG. 8, the imaging semiconductor element 29 is flip-chip bonded 30 to the patterned surface of the glass substrate 28 opposite to the light receiving portion, and the imaging semiconductor element 29 is resin-sealed (see FIG. 8). An optical module (not shown) is also implemented.

Further, as represented by an optical disc apparatus, there is an increasing demand for a package capable of reading a high-density recording medium for an optical pickup package. Therefore, the wavelength of light used for recording and reading is shortened. As shown in FIG. 9, a light receiving semiconductor element 32 connected by a gold wire 31 is mounted on a circuit board 30 and a transparent resin is formed from the light receiving surface side. Although a resin-sealed package sealed at 33 is proposed, even though the resin is transparent in this package, the transparency decreases due to the deterioration of the resin due to light energy, and the attenuation of the light amount increases.
Also, a method of reducing the thickness of the resin on the incident side surface during resin sealing (see Patent Document 3 and Patent Document 4), as shown in FIG. 10, the light receiving surface of the light receiving semiconductor element 35 mounted on the circuit board 34 There has been proposed an optical pickup package in which a cavity portion 36 is formed on the side and sealed with a resin 37, and the cavity portion 36 is sealed with a cover glass 38 to reduce the attenuation of light quantity.

JP 2003-17715 A JP 2003-273371 A

Glass epoxy substrates and ceramic substrates have been widely used as insulating substrates used for the circuit board. However, these insulating substrates are likely to generate dust, which is caused by generation of dust during processing such as dicing and vibration after completion of the optical module. There was a foreign matter adhering due to generation of dust and the like, and there was a limit in improving the yield. Also, when assembling the lens holder, the light receiving part of the semiconductor element, the distance from the light receiving part to the optical lens becomes the focus, the semiconductor element thickness variation, the adhesive thickness variation during mounting, the lens holder height Variations in image quality affect the accuracy of focusing.
Further, there is a limit to the thickness of the semiconductor element, and the thickness of the semiconductor element and the thickness of the insulating substrate are the total thickness of the optical module.

By the way, in order to avoid the influence of the dust generated by the dicing, there has been proposed a semiconductor device manufacturing method in which the dust is not attached to the surface of the solid-state imaging device during the dicing.
In the semiconductor device manufacturing method, a plurality of CCDs are formed on a semiconductor wafer and then the semiconductor wafer is divided into individual CCDs by dicing in order to reduce scratches on the surface of the solid-state imaging device and adhesion of dust during dicing. At that time, a processing protective film made of an acrylic resin material is applied to the surface of the semiconductor wafer so as to have a film thickness of 1 μm to 3 μm, and then dicing is performed with a rotating blade. After the dicing, the processing protective film is peeled off with an alkaline aqueous solution or an organic solvent. The semiconductor wafer is removed and divided into individual CCDs (see Patent Document 5).

Japanese Patent Laid-Open No. 2003-273043

  As another example, a step of aligning and joining a plurality of solid-state image sensors with a predetermined interval on one surface of a base material with the light-receiving surface as an exposed surface side, and an exposed surface of each solid-state image sensor A step of covering the light receiving region with a flexible protective film formed in a piece, and a solid-state imaging device coated with the protective film is clamped with a mold having a flat clamping surface together with a base material. A step of removing the protective film from the light-receiving surface of the solid-state image sensor after filling the sealing portion with a sealing material in a gap surrounded by the sandwiching surface, the protective film, and the adjacent solid-state image sensor and molding the resin, and molding A step of adhering a translucent plate over the entire surface of the substrate so as to cover the exposed light receiving surface of each solid-state image sensor through a material, and a step of cutting into individual semiconductor devices along adjacent solid-state image sensors Foreign matter adheres to the light receiving surface of the solid-state image sensor The method of manufacturing a semiconductor device designed to prevent has been proposed (see Patent Document 6).

JP 2003-332542 A

  The manufacturing method of the semiconductor device described in Patent Document 5 can prevent dust generated during dicing from adhering to the surface of the semiconductor element. On the other hand, when the manufactured semiconductor element goes through other manufacturing processes such as a resin mold, the adhesion of dust to the surface of the semiconductor element and the removal of contamination are not solved.

  Further, in the method of manufacturing a semiconductor device described in Patent Document 6, the solid-state imaging element and the protective film are sandwiched and clamped with a mold, and the gap is filled with resin. Even if the protective film is provided, a great load is applied to the surface of the image sensor. At this time, if the mold clamping pressure is weakened, the resin flows into the gap between the protective film and the mold, and a resin burr is generated after the protective film is peeled off, resulting in foreign matters in a subsequent process.

  The present invention proposes a method of manufacturing a semiconductor device that can comprehensively solve the various problems.

First, there is a problem of preventing dust from adhering to the light receiving surface of the semiconductor element. As the preventive measures, (1) selection of a material that generates less dust, (2) a processing method that does not generate dust, and (3) process Although it is conceivable to prevent adhesion of foreign matter inside, the methods (1) and (2) are effective preventive measures, but at present, the materials are limited and the knowledge of physical processing that does not generate dust is difficult.
Therefore, in the invention of the present application, the method (3) is adopted, and a dicing process is performed from a state of a semiconductor wafer on which a light receiving semiconductor element (hereinafter referred to as a semiconductor element) such as an imaging semiconductor element or a photoelectric conversion semiconductor element is formed. Through this process, the surface of the semiconductor element is protected from foreign matters such as dust until it is assembled in a sealed state having a cavity, and a manufacturing method is proposed in which foreign matter does not adhere to the surface of the semiconductor element even if foreign matter is generated during manufacturing. is there.

As a second problem, there is a problem of reliability of the semiconductor device having the semiconductor element. However, in many cases, since the optical module has a hollow portion, wiring such as a gold wire which is an electrical lead wire, semiconductor element Many areas such as the surface of the surface are exposed to the outside.
In general, an electrode made of aluminum or the like is provided on the surface of the semiconductor element for connection of a gold wire or the like, but the exposed electrode is highly likely to be corroded due to intrusion of moisture into the resin package. Moreover, the area | region which must exclude a foreign material becomes large because of a large exposure.

  Therefore, in the present invention, in order to ensure reliability, the surface of the semiconductor element is covered with a resin except for the optically used region, and the wire such as a gold wire that is electrically drawn from the semiconductor element is protected from external force or moisture. It shuts off and improves the reliability as a resin package. This will be described in detail in the resin sealing step described later.

In addition, in the case of the optical module having the hollow portion, in order to attach the cover glass, a gap is required in addition to the height of the wire loop for connection. At this time, the gap amount is weak against external force because the wire is exposed and not protected, and it is necessary to take a sufficient distance.
Therefore, in the present invention, the resin package is polished at the time of assembly to ensure a uniform thickness, and the required minimum thin package is made thinner than the resin package, which will be described later.

Furthermore, in the case of a structure having a hollow portion, a space for pasting the cover glass is required in addition to the wire drawer, and the size must be increased accordingly.
On the other hand, in the present invention, since the wire lead-out portion is covered with resin, the wire lead-out portion and an optically transparent member, for example, a glass plate attaching portion are shared three-dimensionally, and the resin package is correspondingly shared. It can be made small.

In order to comprehensively solve the above problems, a method for manufacturing a semiconductor device of the present invention includes:
Forming a protective film on each light receiving portion of a plurality of semiconductor elements formed on a semiconductor wafer;
Dividing the semiconductor wafer into semiconductor elements, and mounting the divided semiconductor elements on a large circuit board;
Bonding each of the semiconductor elements and the wiring of the large circuit board with a wire, sealing the resin with a resin so as to cover the protective film, the wires, and the plurality of semiconductor elements, and the protective film Polishing the resin until the surface of is exposed;
Removing the protective film, pasting a cover on the semiconductor element, the polished resin, cutting the large circuit board and dividing it into individual semiconductor devices,
Have

  It is possible to prevent foreign matter from adhering to the light receiving portion by preventing entry of foreign matter such as dust and moisture that degrade the image quality received by the semiconductor device. In addition, since the resin package is uniformly thinned by polishing, the semiconductor device can be made thinner and the optical module using the semiconductor device can be made smaller and thinner.

A first embodiment of a method for manufacturing an imaging semiconductor device or a light receiving semiconductor device according to the present invention and a semiconductor device manufactured by the manufacturing method will be described below.
Hereinafter, an imaging semiconductor device provided with an imaging semiconductor element will be described as an example, but the method for manufacturing a semiconductor device of the present invention is also applicable to manufacturing a light receiving semiconductor device used in an optical disk device.

[Step 1] Formation of Protective Film on Light-Receiving Portion of Imaging Semiconductor Element As shown in FIG. 1, the formation of the protective film on the light-receiving portion of the imaging semiconductor element is a semiconductor in which a plurality of imaging semiconductor elements are formed. A photoresist having a thickness of 0.1 mm or more is uniformly coated on the entire surface of the wafer 1 by a resist coater, and a resist protective film 2 is formed only by the photoresist in the region of the light receiving portion of the imaging semiconductor element by exposure, development and etching. Form.
The thickness of the resist protective film 2 needs to be constant so that a wire loop at the time of wire bonding, which will be described later, is sufficiently hidden. Incidentally, 0.1 mm or more is sufficient, and since the thickness of the resin package is adjusted by polishing in a later process, strict film thickness management is not required.

[Step 2] Dicing of Semiconductor Wafer As shown in FIG. 1, tape 3 is attached to the back surface of the semiconductor wafer 1, and the semiconductor wafer 1 is diced with a rotating blade or the like until reaching the tape 3 for each imaging semiconductor element. Perform 4 to divide.
At this time, cutting chips such as debris of the semiconductor wafer 1 are generated by dicing. However, since the resist protective film 2 is applied before dicing, such foreign matter is received by the light received under the resist protective film 2. Therefore, the cause of foreign matter adhesion can be eliminated.

[Step 3] Mounting Divided Imaging Semiconductor Elements on Large Circuit Board As shown in FIG. 2, each divided imaging semiconductor element 5 has a region wired for each imaging semiconductor element 5. Each is mounted on a large circuit board 6.
In this mounting, each imaging semiconductor element 5 divided on the tape 3 (FIG. 1) by the dicing 4 is sucked by a suction means one by one and moved to a mounting place on the large circuit board 6. Do.
At this time, since the resist protective film 2 is provided on the surface of the light receiving portion of the imaging semiconductor element 5, even if the surface of the imaging semiconductor element 5 is adsorbed, it does not cause scratches or foreign matter and is stable. And can be easily peeled from the tape 3 (FIG. 1).
Here, lead frames, electroformed sheet circuit boards, glass epoxy circuit boards, flexible circuit boards, etc. can be used as large circuit boards to be mounted. A lead can be used so that a large number of products can be obtained.

[Step 4] Wire Bonding of Imaging Semiconductor Element and Circuit Board Wiring Plasma etching is performed as necessary as a pre-process for wire bonding. This plasma etching is performed in order to remove metal oxides on the surfaces of electrodes such as bonding pads and bumps of the imaging semiconductor element 5.
As shown in FIG. 3, it is preferable that the wire bonding of the electrode 7 (not shown) of the imaging semiconductor element 5 and the wiring (not shown) of the circuit board 6 with the wire 7 is performed with a low loop. This is to reduce the thickness of the resin package, which will be described later, and the resin package is polished in a later process. However, the lower the loop of the wire 7, the thinner the resin package can be polished. Therefore, if the loop is made low, a thin resin package can be easily obtained by the polishing.

[Step 5] Formation of Resin Package As shown in FIG. 4, the resist protective film 2, the wires 7, and the plurality of imaging semiconductor elements 5 are entirely covered with a resin 8.
Since the sealing with the resin 8 can be performed by clamping the large-sized circuit board 6 with the mold clamped, the load on the imaging semiconductor element 5 is dispersed, and the adjacent imaging semiconductor element No burrs are generated between them.
When using a mold, for example, a film assist method may be used. For example, when the thickness of the semiconductor element for imaging is 0.4 mm, a mold having a thickness of the semiconductor element + 0.2 mm, that is, a thickness of 0.6 mm is used. Further, it can be sealed by a printing method or a dispensing method.

  Here, in order to bond an optically transparent member such as a cover glass in a later step, a shallow groove 9 is formed on the upper surface of the resin between adjacent semiconductor elements using a dicer as shown in FIG. Form each one. The shallow groove 9 may be formed after polishing the resin in the subsequent step 6. The shallow groove may be omitted. By providing this shallow groove 9, it becomes a groove for pouring an adhesive for bonding a glass cover, which will be described later, and is also used as a positioning mark for dicing.

[Step 6] Polishing of Resin Package As shown in FIG. 5, the entire surface of the resin 8 molded in Step 5 is polished with a polishing machine to a predetermined height at which the surface of the resist protective film 2 is completely exposed. Polish uniformly. In order to attach the cover glass to the resin 8 that has been polished later, the shallow groove 9 is formed in the resin portion between adjacent semiconductor elements as necessary.
In this resin polishing step, the resin 8 of the imaging semiconductor device can be easily thinned by polishing and thinning the resin 8 to a thickness that completely seals the imaging semiconductor element 5 and the wire 7. be able to.

[Step 7] Removal of Resist Protective Film The resist protective film 2 provided on the light receiving surface of each imaging semiconductor element 5 is removed by etching (FIG. 6), and after removal, washed with pure water. In this step, since the resist protective film 2 is removed and then washed with pure water, no foreign matter adheres without the resist protective film 2. Moreover, even if a foreign substance adheres for some reason, it can be removed by washing.
By providing the resist protective film 2, it is possible to prevent the light receiving surface of the imaging semiconductor element 5 from being contaminated or scratched in the steps from the semiconductor wafer dicing step to the resin package polishing step. Since the height of the cavity 10 formed by removing the resist protective film 2 is determined only by the thickness after the resin polishing, it can be formed extremely low, and the structure is such that the distance between the lens such as the optical module and the imaging semiconductor element is close. It becomes possible to do.

[Step 8] Affixing the cover glass As shown in FIG. 6, after removing the resist protective film 2 in the step 7, a UV adhesive or the like is poured into the adhesive casting shallow groove 9 and optically transparent. A flat large cover glass 11 is affixed to the whole to form an imaging semiconductor device in which the light receiving portion of the imaging semiconductor element 5 in the cavity 10 is sealed. Thereby, a new foreign substance can be prevented from entering the cavity 10. The cover glass may be attached individually for each imaging semiconductor element 5.

[Step 9] Dicing of Large Circuit Board After the cover glass 11 is pasted together, the circuit board 6 and the cover glass 11 are placed at the center position of the groove 9 at the reference position AA 'and the circuit board is taken. Dicing in a full cut toward 6 and dividing into individual imaging semiconductor devices. When the cover glass is individually attached to each imaging semiconductor element, only the large circuit board 6 is diced and divided into individual imaging semiconductor devices. At the time of dicing, since the cavity 10 is covered with the cover glass 11, no foreign matter adheres to the light receiving surface of the imaging semiconductor element 5.

The imaging semiconductor device 13 manufactured through the above steps is shown in FIG.
Since the entire wire 7 including the wire bonding portion of the completed imaging semiconductor device 13 is sealed with the polished resin package 8a, an imaging semiconductor device capable of being thinned is obtained.
In addition, by forming a pattern of the external terminal 12 connected to the bonding land of the circuit board 6a in advance on the back side of the circuit board 6a, the imaging semiconductor device 13 can be mounted on a flat cable or a printed wiring board and connected to the external circuit. Connection can be made.

  As shown in FIG. 7, an imaging semiconductor device 13 manufactured by the manufacturing method of the present invention includes an imaging semiconductor element 5, a resin package 8a, a cavity 10 and a cover glass 11a mounted on a circuit board 6a. ing. Since it has been manufactured through the above steps, no foreign matter adheres to the surface of the light receiving portion (cover glass side) of the imaging semiconductor element 5.

Further, only the portion where the resist protective film 2 is removed remains in the cavity 10, and therefore the height of the cavity 10 is determined only by the thickness of the resist protective film 2, so that the height of the cavity 10 is reduced. Therefore, the imaging semiconductor device 13 as a whole can be formed thinner than the conventional imaging semiconductor device. Therefore, when this imaging semiconductor device is used in an optical module, it can be made smaller and thinner than a conventional optical module.
In the embodiment, the cavity is covered with an optically transparent cover glass. However, when a semiconductor device is incorporated in a lens holder constituting an optical module, the cover glass is not necessarily required. A second embodiment will be described.

  Hereinafter, the second embodiment of the present invention will be described with reference to the drawings of the first embodiment.

[Step 1] Formation of Protective Film on Light Receiving Section of Imaging Semiconductor Element As shown in FIG. 1, the protective film is formed on the surface of the imaging semiconductor element by a semiconductor wafer on which a plurality of imaging semiconductor elements are formed. 1. Photoresist having a thickness of 0.1 mm or more is uniformly applied to the entire surface of 1 with a resist coater, and a resist protective film 2 is formed with resist only in the region of the light receiving portion of the imaging semiconductor element by exposure, development and etching. To do.
The thickness of the resist protective film 2 needs to be constant so that a wire loop at the time of wire bonding, which will be described later, is sufficiently hidden. Incidentally, 0.1 mm or more is sufficient, and since the thickness of the resin package is adjusted by polishing in a later process, strict film thickness management is not required.

[Step 2] Dicing of Semiconductor Wafer As shown in FIG. 1, tape 3 is attached to the back surface of the semiconductor wafer 1, and the semiconductor wafer 1 is diced with a rotating blade or the like until reaching the tape 3 for each imaging semiconductor element. Perform 4 to divide.

[Step 3] Mounting Divided Imaging Semiconductor Elements on Large Circuit Board As shown in FIG. 2, each divided imaging semiconductor element 5 has a region wired for each imaging semiconductor element 5. Each is mounted on a large circuit board 6.
In this mounting, each imaging semiconductor element 5 divided on the tape 3 (FIG. 1) by the dicing 4 is sucked by a suction means one by one and moved to a mounting place on the large circuit board 6. Do.

[Step 4] Wire Bonding of Imaging Semiconductor Element and Circuit Board Wiring Plasma etching is performed as necessary as a pre-process for wire bonding. This plasma etching is performed in order to remove metal oxides on the surfaces of electrodes such as bonding pads and bumps of the imaging semiconductor element 5.
As shown in FIG. 3, the wire bonding of the electrode of the imaging semiconductor element 5 and the wiring of the circuit board 6 by the wire 7 is performed in a low loop.

[Step 5] Formation of Resin Package As shown in FIG. 4, the resist protective film 2, the wires 7, and the plurality of imaging semiconductor elements 5 are entirely covered with a resin 8.

[Step 6] Polishing of Resin Package As shown in FIG. 5, the entire surface of the resin 8 molded in Step 5 is polished with a polishing machine to a predetermined height at which the surface of the resist protective film 2 is completely exposed. Polish uniformly.

[Step 7] Removal of resist protective film The resist protective film 2 provided on the light receiving portion of each imaging semiconductor element 5 is removed by etching (FIG. 6). After the removal, the surface of the imaging semiconductor element is purified with pure water. Wash with.
The processes up to the above are the same as in the first embodiment. In addition, the following process is a process of attaching a cover tape instead of attaching the cover glass.

[Step 8] Affixing the cover tape As shown in FIG. 6, after removing the resist protective film 2 in the step 7, a large cover tape 11 is used instead of the cover glass in the first embodiment. The semiconductor device having the hollow portion 10 is formed by sealing the light receiving portion of the imaging semiconductor element 5 and sealing the light receiving portion. As a result, new foreign matter can be prevented from entering the inner cavity 10. The shallow groove 9 can be omitted in the process of applying the cover tape.

[Step 9] Dicing large-sized circuit board After the cover tape 11 is pasted together, the large-sized circuit board 6 and the resin 8 are taken at the reference position AA ′ and diced in a full cut for individual imaging. Divide into semiconductor devices. At the time of dicing, the cavity 10 is covered with the cover tape 11, so that no foreign matter adheres to the light receiving portion of the imaging semiconductor element 5.

As shown in FIG. 7, the semiconductor device 13 manufactured by the manufacturing method according to the second embodiment of the present invention includes the imaging semiconductor element 5, the resin package 8a, and the cavity 10 mounted on the circuit board 6a. ing. Since it has been manufactured through the above steps, no foreign matter adheres to the surface of the light receiving portion of the imaging semiconductor element 5.
In the imaging semiconductor device manufactured in the second embodiment, the cavity 10 is not covered with the cover glass. However, the imaging tape is peeled off and the imaging semiconductor device is directly incorporated in the lens holder. This prevents foreign matter from adhering to the light receiving portion of the imaging semiconductor element.

Further, the cavity 10 remains only in the portion where the resist protective film 2 is formed and removed, and therefore the height of the cavity 10 is determined only by the thickness of the resist protective film 2, so that the height of the cavity 10 is increased. The imaging semiconductor device 13 can be formed thinner than the conventional imaging semiconductor device as a whole. Therefore, when this imaging semiconductor device is used in an optical module, it can be made smaller and thinner than a conventional optical module.
In each of the above-described embodiments, the imaging semiconductor element has been described as an example of the semiconductor element, but the present invention is also applicable to the manufacture of a light receiving semiconductor device used for an optical pickup of an optical disc device or the like instead of the imaging semiconductor element. be able to.

It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the process of the manufacturing method of the semiconductor device of this invention. It is sectional drawing of the semiconductor device for imaging manufactured with the manufacturing method of the semiconductor device of this invention. It is explanatory drawing of the conventional semiconductor device. It is explanatory drawing of the conventional semiconductor device. It is explanatory drawing of the conventional semiconductor device. It is explanatory drawing of the conventional optical module. It is explanatory drawing of the conventional optical module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 .... Semiconductor wafer 2 .... Resist protective film 5 .... Semiconductor element 6 ... Large format circuit board 8 .... Polished resin 8a ... Resin package 10 ... Hollow part 11, 11a ... Cover glass for cover Tape 13. ・ Semiconductor device

Claims (10)

Forming a protective film on each light receiving portion of a plurality of semiconductor elements for imaging formed on a semiconductor wafer;
Dividing the semiconductor wafer for each imaging semiconductor element;
Mounting the divided imaging semiconductor elements on a large circuit board;
Bonding each of the imaging semiconductor elements and the wiring of the large circuit board with a wire;
Sealing with a resin so as to cover the protective film, the wire, and the plurality of imaging semiconductor elements,
Polishing the resin until the surface of the protective film is exposed;
Removing the protective film;
A step of affixing a cover on the imaging semiconductor element and the polished resin;
Cutting the large circuit board and dividing it into individual imaging semiconductor devices;
A method for manufacturing an imaging semiconductor device, comprising: a step of peeling the cover .   An imaging semiconductor device manufactured by the method for manufacturing an imaging semiconductor device according to claim 1 and mounted on a circuit board, and a resin package cavity on a light receiving portion of the imaging semiconductor device. A semiconductor device for imaging characterized. Forming a protective film on each light receiving portion of a plurality of semiconductor elements for imaging formed on a semiconductor wafer;
Dividing the semiconductor wafer for each imaging semiconductor element;
Mounting the divided imaging semiconductor elements on a large circuit board;
Bonding each of the imaging semiconductor elements and the wiring of the large circuit board with a wire;
Sealing with a resin so as to cover the protective film, the wire, and the plurality of imaging semiconductor elements,
Polishing the resin until the surface of the protective film is exposed;
Removing the protective film;
A step of attaching an optically transparent cover member on the imaging semiconductor element and the polished resin;
Cutting the large circuit board and dividing it into individual imaging semiconductor devices;
A method for manufacturing an imaging semiconductor device, comprising:   4. The method for manufacturing an imaging semiconductor device according to claim 3, wherein the optically transparent cover member is made of glass.   An imaging semiconductor device manufactured by the method for manufacturing an imaging semiconductor device according to claim 3 or 4 and mounted on a circuit board; and a cavity portion of a resin package on a light receiving portion of the imaging semiconductor device; An imaging semiconductor device comprising: a cover glass that closes the cavity. Forming a protective film on each light receiving portion of a plurality of light receiving semiconductor elements formed on a semiconductor wafer;
Dividing the semiconductor wafer into light receiving semiconductor elements;
Mounting the divided light receiving semiconductor element on a large circuit board;
Bonding each light receiving semiconductor element and the wiring of the large circuit board with a wire;
Sealing with a resin so as to cover the protective film, the wire and the plurality of light receiving semiconductor elements,
Polishing the resin until the surface of the protective film is exposed;
Removing the protective film;
A step of affixing a cover on the light-receiving semiconductor element and the polished resin;
Cutting the large circuit board and dividing it into individual light receiving semiconductor devices;
A method of manufacturing a light-receiving semiconductor device, comprising:   A light receiving semiconductor device manufactured by the method for manufacturing a light receiving semiconductor device according to claim 6 and mounted on a circuit board, and a cavity portion of a resin package on a light receiving portion of the light receiving semiconductor device. A light-receiving semiconductor device. Forming a protective film on each light receiving portion of a plurality of light receiving semiconductor elements formed on a semiconductor wafer;
Dividing the semiconductor wafer into light receiving semiconductor elements;
Mounting the divided light receiving semiconductor element on a large circuit board;
Bonding each light receiving semiconductor element and the wiring of the large circuit board with a wire;
Sealing with a resin so as to cover the protective film, the wire and the plurality of light receiving semiconductor elements,
Polishing the resin until the surface of the protective film is exposed;
Removing the protective film;
A step of attaching an optically transparent cover member on the light-receiving semiconductor element and the polished resin;
Cutting the large circuit board and dividing it into individual light receiving semiconductor devices;
A method of manufacturing a light-receiving semiconductor device, comprising:   9. The method of manufacturing a light receiving semiconductor device according to claim 8, wherein the optically transparent cover member is made of glass.   A light receiving semiconductor element manufactured by the method for manufacturing a light receiving semiconductor device according to claim 8 or 9 and mounted on a circuit board, and a cavity portion of a resin package on a light receiving portion of the light receiving semiconductor element; A light receiving semiconductor device comprising: a cover glass that closes the cavity.

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