JP2009170585A - Solid-state imaging apparatus - Google Patents
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- 238000003384 imaging method Methods 0.000 title claims abstract description 71
- 239000011521 glass Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 60
- 238000007789 sealing Methods 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 14
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000009429 electrical wiring Methods 0.000 description 7
- 239000003086 colorant Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
Description
本発明は、ＣＣＤやＣＭＯＳからなる光電変換素子を形成した固体撮像素子を有する固体撮像装置に関する。 The present invention relates to a solid-state imaging device having a solid-state imaging element in which a photoelectric conversion element composed of a CCD or a CMOS is formed.
近年、撮像装置は画像の記録、通信、放送の内容の拡大に伴って広く用いられるようになっている。撮像装置として種々の形式のものが提案されているが、小型、軽量で高性能のものが安定して製造されるようになってきている固体撮像素子を用いた撮像装置が、普及してきている。 In recent years, imaging devices have been widely used with the expansion of the contents of image recording, communication, and broadcasting. Although various types of imaging devices have been proposed, imaging devices using solid-state imaging devices that have been stably manufactured with small size, light weight, and high performance have become widespread. .
固体撮像素子は、撮影対象物からの光学像を受け、入射した光を電気信号に変換する複数の光電変換素子を有する。光電変換素子の種類はＣＣＤ（電荷結合素子）タイプとＣＭＯＳ（相補型金属酸化物半導体）タイプとに大別される。また、光電変換素子の配列形態から、光電変換素子を1列に配置したリニアセンサー（ラインセンサー）と、光電変換素子を縦横に２次元的に配列させたエリアセンサー（面センサー）との2種類に大別される。いずれのセンサにおいても光電変換素子の数（画素数）が多いほど撮影された画像は精密になる。また、光電変換素子に入射する光の経路に、特定の波長の光を透過する各種のカラーフィルタを設けることで対象物の色情報を得ることを可能としたカラーセンサーも普及している。カラーフィルタの色としては、赤色（Ｒ）、青色（Ｂ）、緑色（Ｇ）の３色からなる３原色系、あるいは、シアン色（Ｃ）、マゼンタ色（Ｍ）、イエロー色（Ｙ）からなる補色系が一般的である。 The solid-state imaging device has a plurality of photoelectric conversion elements that receive an optical image from a subject and convert incident light into an electrical signal. The types of photoelectric conversion elements are roughly classified into CCD (charge coupled device) type and CMOS (complementary metal oxide semiconductor) type. In addition, there are two types of photoelectric conversion elements: linear sensors (line sensors) in which photoelectric conversion elements are arranged in a row, and area sensors (surface sensors) in which photoelectric conversion elements are two-dimensionally arranged vertically and horizontally. It is divided roughly into. In any sensor, the larger the number of photoelectric conversion elements (number of pixels), the more accurate the captured image. In addition, a color sensor that can obtain color information of an object by providing various color filters that transmit light of a specific wavelength in the path of light incident on the photoelectric conversion element is also widespread. As the color of the color filter, three primary colors consisting of three colors of red (R), blue (B), and green (G), or cyan (C), magenta (M), and yellow (Y) are used. A complementary color system is generally used.
固体撮像素子に要求される性能で重要な課題の一つに、入射する光への感度を向上させることが挙げられる。撮影した画像の情報量を多くするためには受光部となる光電変換素子を微細化して高集積化する必要がある。しかし、光電変換素子を微細化した場合、各光電変換素子の面積が小さくなり、光を取り込む面積が小さくなるため、光電変換素子に取り込める光の量が少なくなる。また、カラーフィルタを設けた固体撮像素子では、カラーフィルタを光が通過する際に波長の分離、カラーフィルタによる光の吸収が生じるため、光電変換素子に入射する光量が低下する。そのため、固体撮像素子として光への感度の低下が生じるものである。 One of the important issues in performance required for a solid-state imaging device is to improve the sensitivity to incident light. In order to increase the amount of information of a photographed image, it is necessary to miniaturize and highly integrate a photoelectric conversion element serving as a light receiving unit. However, when the photoelectric conversion element is miniaturized, the area of each photoelectric conversion element is reduced, and the area for capturing light is reduced, so that the amount of light that can be captured by the photoelectric conversion element is reduced. In a solid-state imaging device provided with a color filter, wavelength separation and light absorption by the color filter occur when light passes through the color filter, so that the amount of light incident on the photoelectric conversion element is reduced. Therefore, the sensitivity to light decreases as a solid-state imaging device.
このような、固体撮像素子の感度の低下を防止するための手段として、光電変換素子（受光部）に効率良く光を取り込むために、対象物から入射される光を集光して光電変換素子（受光部）に導くマイクロレンズを形成する技術が提案されている（特許文献１参照）。マイクロレンズで光を集光して光電変換素子（受光部）に導くことで、受光部の見かけ上の開口率（面積）を大きくすることが可能になり、固体撮像素子の感度を向上させることが可能になる。 As a means for preventing such a decrease in the sensitivity of the solid-state imaging device, in order to efficiently capture light into the photoelectric conversion element (light receiving unit), the light incident from the object is condensed and the photoelectric conversion element A technique for forming a microlens leading to a (light receiving unit) has been proposed (see Patent Document 1). By condensing light with a microlens and guiding it to a photoelectric conversion element (light-receiving part), it becomes possible to increase the apparent aperture ratio (area) of the light-receiving part and improve the sensitivity of the solid-state image sensor. Is possible.
光電変換素子は入射した光を電気信号に変換するが、光が所定の光電変換素子に入射せず、異なった光電変換素子（例えば、隣接した光電変換素子）に入射した場合、得られる画像にノイズが生じる。特に、カラーフィルタを配設したカラーセンサの場合、カラーフィルタを通過した光が異なった光電変換素子に入射すると、得られる画像に混色の問題が生じる。このような、誤入射は、斜め方向から光電変換素子に入射する光に発生しやすい。そのため、斜め入射する光が、所望する光電変換素子とは異なった光電変換素子に入射するのを防止するため、遮光壁を固体撮像素子の側端部や個々のカラーフィルタ間に設ける技術が提案されている（特許文献２参照）。 The photoelectric conversion element converts the incident light into an electrical signal, but when the light does not enter the predetermined photoelectric conversion element and enters a different photoelectric conversion element (for example, an adjacent photoelectric conversion element), Noise is generated. In particular, in the case of a color sensor provided with a color filter, if light that has passed through the color filter enters a different photoelectric conversion element, a problem of color mixing occurs in the obtained image. Such erroneous incidence is likely to occur in light incident on the photoelectric conversion element from an oblique direction. For this reason, in order to prevent obliquely incident light from entering a photoelectric conversion element different from the desired photoelectric conversion element, a technique is proposed in which a light shielding wall is provided between the side edge of the solid-state image sensor and between individual color filters. (See Patent Document 2).
光電変換素子を形成した固体撮像素子に、ゴミなどの異物が付着すると、異物が光を遮るため撮影した画像に黒点などのノイズが発生することになる。そのため、固体撮像素子への異物の付着を防止した封止型（パッケージ型）の固体撮像装置とすることが行われている。図２に、封止型（パッケージ型）固体撮像装置の一例の断面図を模式的に示す。 When a foreign substance such as dust adheres to the solid-state imaging element on which the photoelectric conversion element is formed, the foreign substance blocks light and noise such as a black spot is generated in the photographed image. For this reason, a sealed (packaged) solid-state imaging device that prevents foreign matter from adhering to the solid-state imaging device is used. FIG. 2 schematically shows a cross-sectional view of an example of a sealed (packaged) solid-state imaging device.
図２の固体撮像装置１２では、シリコン（Ｓｉ）基板に複数の光電変換素子１が形成された固体撮像素子４が、電気配線部５を有する配線基板１０上に載置されている。固体撮像素子４と電気配線部５とは電気的接続が行われ（図示せず）、固体撮像素子４からの電気信号が電気配線部５に伝えられる。 In the solid-state imaging device 12 of FIG. 2, a solid-state imaging device 4 in which a plurality of photoelectric conversion elements 1 are formed on a silicon (Si) substrate is placed on a wiring substrate 10 having an electrical wiring portion 5. The solid-state imaging device 4 and the electrical wiring unit 5 are electrically connected (not shown), and an electrical signal from the solid-state imaging device 4 is transmitted to the electrical wiring unit 5.
固体撮像素子４の周囲の配線基板１０には樹脂などからなる封止部６が形成され、封止部６と配線基板１０とで空間部を形成している。固体撮像装置１２に入射する光が光電変換素子１に達するよう、空間部は固体撮像素子４の上方で開放された空間となっている。固体撮像素子４の上方には、光を透過する透明なキャップガラス３が設けられ、キャップガラス３、封止部６、配線基板１０とで封止空間を形成し、封止空間内に固体撮像素子４が載置されている。これにより、固体撮像素子４に異物が付着するのを防止している。 A sealing portion 6 made of a resin or the like is formed on the wiring substrate 10 around the solid-state imaging device 4, and the sealing portion 6 and the wiring substrate 10 form a space portion. The space is an open space above the solid-state image sensor 4 so that light incident on the solid-state image sensor 12 reaches the photoelectric conversion element 1. A transparent cap glass 3 that transmits light is provided above the solid-state imaging device 4, and a sealing space is formed by the cap glass 3, the sealing portion 6, and the wiring substrate 10, and solid-state imaging is performed in the sealing space. Element 4 is placed. This prevents foreign matter from adhering to the solid-state imaging device 4.
また、固体撮像素子４には、特定の波長の光を透過するための所定色のカラーフィルタ７が、各光電変換素子１に対応して複数配設している。さらに、上述したように斜め入射光を遮蔽するために、固体撮像素子４の側端部及び個々のカラーフィルタ７間に遮光壁８が設けられている。カラーフィルタの形成には、着色された感光性樹脂を塗布し、塗布膜へのパターン露光、現像を行い、残存した塗膜をカラーフィルタとするフォトリソ法が広く用いられている。カラーフィルタ形成時に色の異なる樹脂を積層して遮光壁８とする技術も提案されている。 The solid-state image sensor 4 is provided with a plurality of color filters 7 of a predetermined color for transmitting light of a specific wavelength corresponding to each photoelectric conversion element 1. Further, as described above, the light shielding wall 8 is provided between the side end portion of the solid-state imaging device 4 and the individual color filters 7 in order to shield obliquely incident light. For the formation of the color filter, a photolithographic method is widely used in which a colored photosensitive resin is applied, pattern exposure is performed on the coating film, development is performed, and the remaining coating film is used as a color filter. There has also been proposed a technique in which resins having different colors are laminated to form the light shielding wall 8 when forming a color filter.
固体撮像素子４には、入射光を集光して光電変換素子１に導くためのマイクロレンズ２が、個々の光電変換素子１に対応して形成されている。マイクロレンズを形成するにあたり、マイクロレンズを形成する下地面に凹凸があると、マイクロレンズを所望する形状に形成することが困難になる。そのため、カラーフィルタ７上に平坦化層９を設け、平坦とした面にマイクロレンズ２を形成している。図２の例においては、平坦化層９は、カラーフィルタ７上だけでなく、遮光壁８も含めて凹凸の平坦化を行っている。
個々のカラーフィルタの高さ（厚み）は均一とは限らず、所望する分光特性を得るため色毎に高さ（厚み）を異ならせたり、カラーフィルタの形成時に高さ（厚み）がバラツクことがあり、また、カラーフィルタ上に遮光壁を設ける場合もあり、カラーフィルタの表面の平坦性は大きく損なわれているといえる。上述したように、カラーフィルタ７上に形成する平坦化層９は、マイクロレンズを形成する下地面の平坦化を行うために設けられるが、カラーフィルタ表面の平坦性が大きく損なわれている場合、平坦化層９表面に平坦性を持たせるためには、平坦化層９の厚みを厚くする必要がある。 The height (thickness) of each color filter is not necessarily uniform, and the height (thickness) varies for each color to obtain the desired spectral characteristics, or the height (thickness) varies when forming the color filter. In some cases, a light shielding wall may be provided on the color filter, and the flatness of the surface of the color filter is greatly impaired. As described above, the flattening layer 9 formed on the color filter 7 is provided for flattening the base surface on which the microlens is formed. However, when the flatness of the color filter surface is greatly impaired, In order to give flatness to the surface of the planarizing layer 9, it is necessary to increase the thickness of the planarizing layer 9.
平坦化層９の形成にあたっては、透明な樹脂を塗布する技術を用いることが多い。透明な樹脂の塗布で平坦化層９を形成する際、１回の塗布で平坦化層９を形成する場合もあるが、透明樹脂の粘度が低い場合は複数回に分けて透明樹脂を塗布し、透明樹脂を積層した平坦化層９とすることが行われる。 In forming the planarizing layer 9, a technique of applying a transparent resin is often used. When the flattening layer 9 is formed by application of a transparent resin, the flattening layer 9 may be formed by a single application, but when the viscosity of the transparent resin is low, the transparent resin is applied in several steps. Then, the planarizing layer 9 in which a transparent resin is laminated is performed.
マイクロレンズ２の形状、高さは、マイクロレンズ下面から光電変換素子（受光部）ま
での距離によって、予め設定されている。そのため、マイクロレンズ２の形状、高さが設定された後、固体撮像装置を複数個製造する際に、固体撮像装置毎に平坦化層９の厚みがバラツクことは、マイクロレンズによる集光性にバラツキが生じ、個々の固体撮像装置の性能にバラツキをもたらすことになる。
The shape and height of the microlens 2 are set in advance depending on the distance from the bottom surface of the microlens to the photoelectric conversion element (light receiving unit). Therefore, when a plurality of solid-state imaging devices are manufactured after the shape and height of the microlens 2 are set, the thickness of the planarization layer 9 varies for each solid-state imaging device. Variations occur, resulting in variations in the performance of individual solid-state imaging devices.
そのため、平坦化層の形成工程は厳しく制御しなければならず、固体撮像装置の製造工程上の負担は大きい。また、透明樹脂を積層して平坦化層を形成する場合、その分だけ工程が増えるため、製造工程が繁雑になり製造工程の負担はより大きくなるといえる。平坦化層の形成工程を厳しく制御するためには各種の制御装置、駆動装置を必要とするため設備費が掛かり、また、工程数が増えるため、固体撮像装置の製造コストを上げる結果にもなりかねない。 Therefore, the flattening layer forming process must be strictly controlled, and the burden on the manufacturing process of the solid-state imaging device is large. In addition, when a planarization layer is formed by laminating a transparent resin, the number of processes increases by that amount, so that the manufacturing process becomes complicated and the burden of the manufacturing process becomes larger. In order to strictly control the formation process of the planarization layer, various control devices and drive devices are required, which requires equipment costs. In addition, the number of steps increases, resulting in an increase in the manufacturing cost of the solid-state imaging device. It might be.
また、マイクロレンズ２と光電変換素子１（受光部）との距離が短いほうが、マイクロレンズで集光され光電変換素子（受光部）に入射する光の量が増えることになる（所謂、光の取り込み角度が増大することになる）。しかし、平坦化層９表面に平坦性を持たせるために平坦化層９の厚みを厚くすると、その分だけマイクロレンズ２と光電変換素子１（受光部）との距離が長くなり、マイクロレンズで集光され光電変換素子（受光部）に入射する光の量が減ることになる。 In addition, the shorter the distance between the microlens 2 and the photoelectric conversion element 1 (light receiving unit), the more light is collected by the microlens and incident on the photoelectric conversion element (light receiving unit) (so-called light transmission). The capture angle will increase). However, if the thickness of the flattening layer 9 is increased in order to give flatness to the surface of the flattening layer 9, the distance between the microlens 2 and the photoelectric conversion element 1 (light receiving portion) is increased by that amount. The amount of light that is collected and incident on the photoelectric conversion element (light receiving unit) is reduced.
本発明は、上記の問題点に鑑みて成されたもので、その課題とするところは、平坦化層の形成という繁雑な製造工程を不要にし、マイクロレンズによる集光性にバラツキがない均一な特性を有し、また、集光性能を向上させた固体撮像装置を得ることにある。 The present invention has been made in view of the above problems, and the problem is that a complicated manufacturing process of forming a flattening layer is unnecessary, and there is no variation in the light collecting property of the microlens. An object of the present invention is to obtain a solid-state imaging device having characteristics and improved light collecting performance.
上記課題を解決するため、請求項１記載の発明は、
複数の光電変換素子が形成された固体撮像素子が載置され、入射する光が前記光電変換素子に入射するよう固体撮像素子の上方に開放された空間部と、前記空間部の上方に設けられ入射光を透過するキャップガラスとを有する固体撮像装置において、前記キャップガラスの光電変換素子側の面に、光電変換素子に対応したマイクロレンズを配置したことを特徴とする固体撮像装置としたものである。
In order to solve the above problem, the invention according to claim 1
A solid-state imaging device on which a plurality of photoelectric conversion elements are formed is placed, and a space part opened above the solid-state imaging element so that incident light enters the photoelectric conversion element, and provided above the space part. A solid-state imaging device having a cap glass that transmits incident light, wherein the micro-lens corresponding to the photoelectric conversion element is arranged on the surface of the cap glass on the photoelectric conversion element side. is there.
また、請求項２の発明は、請求項１記載の固体撮像素子がリニアセンサーであることを特徴とする固体撮像装置としたものである。 According to a second aspect of the present invention, there is provided a solid-state image pickup device characterized in that the solid-state image pickup element of the first aspect is a linear sensor.
本発明の固体撮像装置によれば、入射光を光電変換素子（受像部）に集光し見かけ上の開口率を向上させるためのマイクロレンズを、表面平坦なキャップガラスに配置したことで、平坦化層を不要にしている。そのため、個々の固体撮像装置を製造する際に、表面平坦で均一な厚みとした平坦化層を得るための繁雑な工程が不要になり、製造工程を短縮できる。また、マイクロレンズを支持する平面が平坦性の良いキャップガラスであって、マイクロレンズと光電変換素子（受像部）との距離を不均一にする要因の一つとなる平坦化層の平坦性の悪さに影響されないため、個々の固体撮像装置でマイクロレンズと光電変換素子（受像部）との距離を均一に形成しやすい。そのため、製造コストが低く性能の均一な固体撮像装置を容易に得ることが可能になる。 According to the solid-state imaging device of the present invention, the microlens for condensing incident light on the photoelectric conversion element (image receiving unit) and improving the apparent aperture ratio is disposed on the cap glass with a flat surface, thereby flattening. The formation layer is unnecessary. Therefore, when manufacturing individual solid-state imaging devices, a complicated process for obtaining a planarized layer having a flat surface and a uniform thickness is not necessary, and the manufacturing process can be shortened. Also, the flat surface that supports the microlens is a cap glass with good flatness, and the flatness of the flattening layer is one of the factors that make the distance between the microlens and the photoelectric conversion element (image receiving portion) non-uniform. Therefore, it is easy to form a uniform distance between the microlens and the photoelectric conversion element (image receiving unit) in each solid-state imaging device. Therefore, it is possible to easily obtain a solid-state imaging device with low manufacturing cost and uniform performance.
また、平坦化層を形成しない分、マイクロレンズと光電変換素子（受像部）との距離を短く出来るため、光の取り込み角度が大きくなりマイクロレンズによる光電変換素子（受像部）への集光性を向上させることが可能になり、感度の良い固体撮像装置を得ることが可能になる。 In addition, since the distance between the microlens and the photoelectric conversion element (image receiving portion) can be shortened by the amount of not forming the planarizing layer, the light capturing angle is increased, and the light condensing property to the photoelectric conversion element (image receiving portion) is increased. Can be improved, and a solid-state imaging device with high sensitivity can be obtained.
さらに、キャップガラスと光電変換素子（受像部）との距離を統一（規格化）する、または、キャップガラスの封止部６の高さを随時変更することで、同一形状のマイクロレンズを形成したキャップガラスを、他の品種の個体撮像装置に適用することも可能になり、製造コストの低い固体撮像装置を得ることが可能になる。その場合、製造工程における膜厚の管理は、カラーフィルタの膜厚管理を優先的に行えば良いことになる。 Furthermore, the microlens of the same shape was formed by unifying (standardizing) the distance between the cap glass and the photoelectric conversion element (image receiving portion) or by changing the height of the sealing portion 6 of the cap glass as needed. Cap glass can be applied to other types of individual imaging devices, and a solid-state imaging device with low manufacturing cost can be obtained. In that case, the thickness control in the manufacturing process may be performed preferentially in the thickness control of the color filter.
なお、光電変換素子を1列に配置したリニアセンサー（ラインセンサー）では、斜め入射光による混色などのノイズを防止するため、カラーフィルタ上に遮光壁を形成することが多いため、カラーフィルタ表面の凹凸は大きくなる。そのため、固体撮像素子がリニアセンサーである固体撮像装置に本発明を適用することは特に有効といえる。 In linear sensors (line sensors) in which photoelectric conversion elements are arranged in a row, a light shielding wall is often formed on the color filter to prevent noise such as color mixing due to obliquely incident light. The unevenness becomes larger. Therefore, it can be said that it is particularly effective to apply the present invention to a solid-state imaging device in which the solid-state imaging element is a linear sensor.
本発明の実施形態の一例を、図面に従って説明する。 An example of an embodiment of the present invention will be described with reference to the drawings.
図１は、本発明の固体撮像装置の一例を模式的に示す断面図である。
図１に示す固体撮像素子４は、Ｓｉ（シリコン）からなる基板に、ＣＣＤまたはＣＭＯＳ構造の光電変換素子１（受光部）を1列に配置したリニアセンサーとした。固体撮像素子４は、電気配線部５を有する配線基板１０上に載置されている。固体撮像素子４と電気配線部５とは電気的接続が行われており（図示せず）、光電変換素子１で得られた電気信号が電気配線部５に伝えられる。電気配線部５は、外部機器との電気的接続を行うための端子部に連なる。
FIG. 1 is a cross-sectional view schematically showing an example of the solid-state imaging device of the present invention.
The solid-state imaging device 4 shown in FIG. 1 is a linear sensor in which a photoelectric conversion device 1 (light receiving unit) having a CCD or CMOS structure is arranged in a row on a substrate made of Si (silicon). The solid-state imaging device 4 is placed on a wiring board 10 having an electrical wiring portion 5. The solid-state imaging device 4 and the electrical wiring unit 5 are electrically connected (not shown), and an electrical signal obtained by the photoelectric conversion element 1 is transmitted to the electrical wiring unit 5. The electrical wiring unit 5 is connected to a terminal unit for electrical connection with an external device.
次いで、各光電変換素子１の上方に、入射光の色分離を行うために、赤色（Ｒ）、青色（Ｂ）、緑色（Ｇ）の３色からなる３原色系のカラーフィルタ７を所定の色配列にて形成している。 各カラーフィルタ７は、赤色（Ｒ）、青色（Ｂ）、緑色（Ｇ）の着色感光性樹脂を各々用い、パターン露光、現像を行い残存した着色感光性樹脂膜をカラーフィルタとするフォトリソ法で形成した。また、斜め入射光を遮蔽するために、固体撮像素子４の側端部及び個々のカラーフィルタ７間に遮光壁８を設けている。カラーフィルタ７間の遮光壁８は、カラーフィルタの形成時に、色の異なる樹脂を残存して積層させて形成した。また、固体撮像素子４の側端部の遮光壁８は、カラーフィルタの形成時に各色の着色樹脂を残存、積層して形成した。 Next, in order to perform color separation of incident light above each photoelectric conversion element 1, a three-primary color filter 7 composed of three colors of red (R), blue (B), and green (G) is provided in a predetermined manner. It is formed by color arrangement. Each color filter 7 is a photolithographic method in which red (R), blue (B), and green (G) colored photosensitive resins are used, and pattern exposure and development are performed and the remaining colored photosensitive resin film is a color filter. Formed. In addition, a light shielding wall 8 is provided between the side end of the solid-state imaging device 4 and each color filter 7 in order to shield obliquely incident light. The light shielding walls 8 between the color filters 7 were formed by laminating the resins having different colors while forming the color filters. The light shielding wall 8 at the side end of the solid-state imaging device 4 is formed by remaining and laminating colored resins of respective colors when forming the color filters.
固体撮像素子４の周囲の配線基板１０には樹脂などからなる封止部６を形成している。封止部６と配線基板１０とで空間部を形成している。固体撮像装置１２に入射する光が光電変換素子１に達するよう、空間部は固体撮像素子４の上方で開放された空間としている。次いで、封止部６を介し、固体撮像素子４の上方に光を透過する透明なキャップガラス３を設けている。封止部６とキャップガラス３との貼り合わせにシール剤を用いる場合、シール剤は、封止部６側に設けても、キャップガラス３側に設けても、あるいは、封止部６側とキャップガラス３側の両方に設けても構わない。キャップガラス３、封止部６、配線基板１０とで封止空間を形成し、封止空間内に固体撮像素子４を載置している。 A sealing portion 6 made of resin or the like is formed on the wiring substrate 10 around the solid-state imaging device 4. A space portion is formed by the sealing portion 6 and the wiring substrate 10. The space portion is a space opened above the solid-state imaging device 4 so that light incident on the solid-state imaging device 12 reaches the photoelectric conversion element 1. Next, a transparent cap glass 3 that transmits light is provided above the solid-state imaging device 4 through the sealing portion 6. When a sealing agent is used for bonding the sealing portion 6 and the cap glass 3, the sealing agent may be provided on the sealing portion 6 side, the cap glass 3 side, or the sealing portion 6 side. You may provide in both the cap glass 3 side. The cap glass 3, the sealing part 6, and the wiring substrate 10 form a sealing space, and the solid-state imaging device 4 is placed in the sealing space.
本発明では、カラーフィルタ上に平坦化層を介してマイクロレンズを設けず、図１に示すようにキャップガラス３の固体撮像素子４側の面に、各固体撮像素子４に対応させてマイクロレンズ２を形成している。マイクロレンズの形成は、フォトリソグラフィ法でガラス上に形成した樹脂パターンを加熱し、溶けた樹脂の表面張力によりレンズ形状とする熱リフロー法を用いて構わない。または、熱リフロー法でガラス上に形成した樹脂からなるレンズ母型をマスクにしてガラスにドライエッチングを行うドライエッチング法により、ガラス表面をレンズ状に形成しても構わず、形成方法は適宜選択することができる。 In the present invention, the microlens is not provided on the color filter via the planarization layer, and the microlens is provided on the surface of the cap glass 3 on the solid-state image sensor 4 side so as to correspond to each solid-state image sensor 4 as shown in FIG. 2 is formed. The microlens can be formed by using a thermal reflow method in which a resin pattern formed on glass by photolithography is heated to form a lens shape by the surface tension of the melted resin. Alternatively, the glass surface may be formed in a lens shape by a dry etching method in which dry etching is performed on the glass using a lens matrix made of a resin formed on the glass by a thermal reflow method as a mask. can do.
キャップガラスの表面は平坦であり、また仮に平坦でないとしても、マイクロレンズの
形成前にガラス表面を研磨する、あるいは、湾曲したガラスを加圧することで平坦とすることは容易であるので、形状精度の良いマイクロレンズを形成するのは容易になる。
The surface of the cap glass is flat, and even if it is not flat, it is easy to polish the glass surface before forming the microlens or press the curved glass to make it flat. It becomes easy to form a good microlens.
本発明では、マイクロレンズを形成したキャップガラス３を、各マイクロレンズと各光電変換素子とが対応するよう貼り合わせる必要があり、貼り合わせの位置精度が要求される。しかし、リニアセンサーの場合、画素の配列ピッチ（光電変換素子の配列ピッチ）は２５μｍ〜７５μｍ程度であるので、貼り合わせは容易といえる。 In the present invention, it is necessary to bond the cap glass 3 on which the microlenses are formed so that each microlens and each photoelectric conversion element correspond to each other, and the positional accuracy of the bonding is required. However, in the case of a linear sensor, since the pixel arrangement pitch (photoelectric conversion element arrangement pitch) is about 25 μm to 75 μm, it can be said that bonding is easy.
以上、本発明の実施の形態につき説明したが、本発明はこれに限定されるものではなく、本発明の趣旨に基づき種々の変形を行っても構わない。例えば、本実施例では、配線基板１０と封止部６とで、固体撮像素子４を載置する空間を形成した。しかし、セラミックやプラスチックなどからなる凹部を有するパッケージ内に固体撮像素子４を載置して固体撮像装置としても構わない。この場合、パッケージの凹部が本願で言う空間部に相当する。すなわち、セラミックなどからなるパッケージの凹部の底部に固体撮像素子４を載置し、凹部の開口部をマイクロレンズを形成したキャップガラス３にて、マイクロレンズが固体撮像素子４側に向くように封止しても構わない。 Although the embodiment of the present invention has been described above, the present invention is not limited to this, and various modifications may be made based on the spirit of the present invention. For example, in this embodiment, a space for mounting the solid-state imaging device 4 is formed by the wiring board 10 and the sealing portion 6. However, the solid-state imaging device 4 may be mounted in a package having a recess made of ceramic, plastic, or the like to form a solid-state imaging device. In this case, the concave portion of the package corresponds to the space portion referred to in the present application. That is, the solid-state imaging device 4 is placed on the bottom of a concave portion of a package made of ceramic or the like, and the opening of the concave portion is sealed with a cap glass 3 having a microlens formed so that the microlens faces the solid-state imaging device 4 side. You can stop it.
また、封止部６の高さ、または、パッケージの凹部の深さは、光電変換素子１とマイクロレンズ２とのギャップ調整を兼ねるため、入射光が光電変換素子１に集光するよう適宜設定して構わない。さらに、封止部の材質は、所定の高さにての形成が容易で、かつ、形成後の高さの変動が少ないものを、適宜選択して構わない。また、カラーフィルタは、シアン色（Ｃ）、マゼンタ色（Ｍ）、イエロー色（Ｙ）からなる補色系であっても構わず、固体撮像素子は、光電変換素子を縦横に２次元的に配列させたエリアセンサー（面センサー）としても構わない。 Further, the height of the sealing portion 6 or the depth of the concave portion of the package is also set as appropriate so that incident light is condensed on the photoelectric conversion element 1 in order to double the gap between the photoelectric conversion element 1 and the microlens 2. It doesn't matter. Furthermore, as the material of the sealing portion, a material that can be easily formed at a predetermined height and has little fluctuation in height after formation may be selected as appropriate. Further, the color filter may be a complementary color system composed of cyan (C), magenta (M), and yellow (Y), and the solid-state imaging device has photoelectric conversion elements arranged two-dimensionally vertically and horizontally. It is also possible to use an area sensor (surface sensor).
１・・・・光電変換素子
２・・・・マイクロレンズ
３・・・・キャップガラス
４・・・・固体撮像素子
５・・・・電気配線部
６・・・・封止部
７・・・・カラーフィルタ
８・・・・遮光壁
９・・・・平坦化層
１０・・・配線基板
１２・・・固体撮像装置
DESCRIPTION OF SYMBOLS 1 ... photoelectric conversion element 2 ... micro lens 3 ... cap glass 4 ... solid-state image sensor 5 ... electric wiring part 6 ... sealing part 7 ...・ Color filter 8... Light shielding wall 9.
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