JP2003309116A5 - - Google Patents

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Publication number
JP2003309116A5
JP2003309116A5 JP2002110940A JP2002110940A JP2003309116A5 JP 2003309116 A5 JP2003309116 A5 JP 2003309116A5 JP 2002110940 A JP2002110940 A JP 2002110940A JP 2002110940 A JP2002110940 A JP 2002110940A JP 2003309116 A5 JP2003309116 A5 JP 2003309116A5
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JP
Japan
Prior art keywords
manufacturing
semiconductor device
frequency power
reaction chamber
gas
Prior art date
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Granted
Application number
JP2002110940A
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English (en)
Japanese (ja)
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JP4018432B2 (ja
JP2003309116A (ja
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Priority to JP2002110940A priority Critical patent/JP4018432B2/ja
Priority claimed from JP2002110940A external-priority patent/JP4018432B2/ja
Publication of JP2003309116A publication Critical patent/JP2003309116A/ja
Publication of JP2003309116A5 publication Critical patent/JP2003309116A5/ja
Application granted granted Critical
Publication of JP4018432B2 publication Critical patent/JP4018432B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002110940A 2002-04-12 2002-04-12 半導体装置の作製方法 Expired - Fee Related JP4018432B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002110940A JP4018432B2 (ja) 2002-04-12 2002-04-12 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002110940A JP4018432B2 (ja) 2002-04-12 2002-04-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003309116A JP2003309116A (ja) 2003-10-31
JP2003309116A5 true JP2003309116A5 (https=) 2005-09-15
JP4018432B2 JP4018432B2 (ja) 2007-12-05

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ID=29393921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002110940A Expired - Fee Related JP4018432B2 (ja) 2002-04-12 2002-04-12 半導体装置の作製方法

Country Status (1)

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JP (1) JP4018432B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849561B1 (en) * 2003-08-18 2005-02-01 Asm Japan K.K. Method of forming low-k films
JP4728748B2 (ja) * 2005-09-05 2011-07-20 株式会社東芝 半導体製造装置の清浄化方法
JP2007287890A (ja) * 2006-04-14 2007-11-01 Kochi Univ Of Technology 絶縁膜の成膜方法、半導体装置の製法、プラズマｃｖｄ装置
US7855153B2 (en) * 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102549638B (zh) * 2009-10-09 2015-04-01 株式会社半导体能源研究所 发光显示器件以及包括该发光显示器件的电子设备

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