JP2003303920A - Wiring plate and manufacturing method of semiconductor device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that employs a wiring board on the surface of which wirings are provided, and after having packaged semiconductor chips onto the wiring, detaches the board to expose the wirings which facilitates the sealing off the gap between the semiconductor device and the packaging plate with an insulator when the semiconductor device is packaged onto the packaging board. <P>SOLUTION: The plate is a wiring plate, that has wirings (conductor pattern) on the surface of a board, and after having packaged semiconductor chips onto the surface of the board where the wirings are arranged, detaches the board to form a semiconductor device. The board has openings that overlap with a portion of the wirings and the opening is provided with a projecting conductor (bump). <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board, a method for manufacturing the wiring board, and a semiconductor device using the wiring board, and more particularly to a wiring board for manufacturing a semiconductor device in which external connection terminals are exposed on the surface. It relates to technology that is effective when applied.

[0002]

2. Description of the Related Art Conventionally, when manufacturing an LGA (Land Grid Array) type semiconductor device, a wiring board having wiring on both sides of an insulating substrate such as a polyimide tape is used.

In the wiring board, for example, wirings connected to the external electrodes of the semiconductor chip are provided on the first main surface of the insulating substrate. Further, an external connection terminal (land) for connecting to a wiring (terminal) of the mounting board is provided on the back surface (second main surface) of the first main surface of the insulating substrate.
At this time, the wiring on the first main surface and the land on the second main surface of the insulating substrate are electrically connected by, for example, vias.

However, when wiring is formed on both surfaces of the insulating substrate, manufacturing costs are high. Further, the wiring board becomes thick, and it is difficult to downsize the semiconductor device.

Therefore, in recent years, FIG. 10 (a) and FIG.
As shown in FIG. 0 (b), there has been proposed a method of manufacturing the LGA type semiconductor device using a wiring board in which wiring 2 is provided on the surface of a tape-shaped substrate 1.

At this time, the substrate 1 is, for example, a QFN.
A substrate used to prevent leakage of a sealing insulator when manufacturing a (Quad Flat Non-leaded package) type semiconductor device. For example, as shown in FIG. 11, an insulating base material such as a polyimide tape is used. Removable material 10 on the surface of 101
Two are provided. Here, the removable agent 102 is
For example, it is an adhesive material such as a thermoplastic adhesive that can peel off the wiring 2 in a later step. The surface of the wiring 2 is provided with a first functional plating 401 such as tin plating, tin alloy plating, gold plating, or the like.

At this time, the external connection terminals 2A of the wiring 2 are arranged in an array, for example, as shown in FIG. 10A, and one end of the wiring 2 has an area AR1 where a semiconductor chip is mounted. Are arranged so as to surround the outer periphery of the.

The substrate 1 is a tape shape elongated in one direction like the insulating substrate of a wiring board used in a tape carrier package (TCP), and has a region as shown in FIG. 10 (a). The pattern in AR2 is repeatedly provided.

In the wiring board as shown in FIGS. 10 (a) and 10 (b), for example, after a conductor film such as copper foil is adhered onto the substrate 1, the conductor film is patterned to form the wiring board. The wiring 2 is formed. Then, the first functional plating 401 is formed on the surface of the wiring 2 as needed.

When manufacturing a semiconductor device using a wiring board as shown in FIGS. 10A and 10B, first, as shown in FIG. 12A, on the wiring 2 of the wiring board. Then, the semiconductor chip 6 is bonded by using, for example, a thermosetting adhesive 5 made of a thermosetting resin. Then, the external electrode 601 of the semiconductor chip 6 and the wiring 2 are connected by the bonding wire 7.

Next, as shown in FIG. 12B, the periphery of the semiconductor chip 6, the wiring 2, and the bonding wire 7 is sealed with a sealing insulator 8. At this time, the sealing insulator 8 is formed by transfer molding, for example.

Next, for example, when the substrate 1 is peeled off while heating the substrate 1 to reduce the adhesive force of the removable material 102, as shown in FIG. It is possible to obtain a semiconductor device in which 2 is exposed on the surfaces of the thermosetting adhesive 5 and the sealing insulator 8.
At this time, depending on the type of the removable material 102, the substrate 1 can be peeled off without heating.

At this time, the semiconductor device shown in FIG.
As shown in (a), the wiring 2 is exposed. Therefore, as shown in FIG. 13B, a second functional plating 402 such as a bonding material is formed on the exposed surface of the wiring 2, if necessary. Second functional plating 4
02 is formed by, for example, tin plating, tin alloy plating, gold plating, or the like. At this time, the second functional plating 402
May be formed of the same material as the first functional plating 401 or may be formed of a different material.

[0014]

However, in the prior art, when the semiconductor device is mounted on a mounting board, as shown in FIG. 14, the wiring 2 of the semiconductor device and the wiring of the mounting board 9 ( The height h of the connection portion with the (terminal) 901 is low. Therefore, there is a problem that the gap SP between the semiconductor device and the mounting substrate is narrow and it is difficult to pour the sealing resin into the gap SP.

Since it is difficult to pour the sealing resin into the gap SP between the semiconductor device and the mounting substrate, the wiring 2 of the semiconductor device and the wiring (terminal) 901 of the mounting substrate 9 are provided.
It is often the case that the connection part with and is not exposed and is exposed to the air. Therefore, oxidation of the connection portion between the wiring 2 of the semiconductor device and the wiring (terminal) 901 of the mounting substrate 9,
Alternatively, there is a problem that the connection reliability and the electrical characteristics of the connection portion are likely to be deteriorated due to corrosion due to moisture in the air.

An object of the present invention is to provide a semiconductor device in which a wiring board provided with wiring on the surface of a substrate is used, a semiconductor chip is mounted on the wiring, and then the substrate is peeled off to expose the wiring. It is an object of the present invention to provide a technique capable of facilitating sealing between the semiconductor device and the mounting substrate with an insulator when the semiconductor device is mounted on the mounting substrate.

An object of the present invention is to provide a semiconductor device in which a wiring board provided with wiring on a surface of a substrate is used, a semiconductor chip is mounted on the wiring, and then the substrate is peeled off to expose the wiring. An object of the present invention is to provide a technique capable of preventing deterioration of connection reliability and electrical characteristics when mounting a semiconductor device on a mounting board.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0019]

The outline of the invention disclosed in the present invention is as follows.

(1) Wiring (conductor pattern) on the surface of the substrate
Is provided, after mounting a semiconductor chip on the surface of the substrate on which the wiring is provided, a wiring board for peeling off the substrate to form a semiconductor device, wherein the substrate is
In the wiring board, a region overlapping with a part of the wiring is opened, and a protrusion-shaped conductor (bump) is provided in the opening.

According to the above-mentioned means (1), since the projecting conductor is provided in the opening of the substrate, the semiconductor chip is mounted on the wiring board and sealed, and thereafter the semiconductor chip is sealed. When the substrate is peeled off, it is possible to obtain a semiconductor device in which the protruding conductor is provided on the exposed surface of the wiring. Therefore, when mounting the semiconductor device formed using the wiring board on the mounting substrate, the gap between the semiconductor device and the mounting substrate can be widened by the height of the protruding conductor. At this time, it is preferable that the projecting conductor is provided by using, for example, copper, nickel, gold, silver, tin, or an alloy thereof.

At this time, if a bonding material is provided on the surface of the projecting conductor, the wiring is exposed after the substrate is peeled off when a semiconductor device is formed using the wiring board. The step of forming the bonding material on the surface can be omitted. At this time, as the bonding material, for example, tin plating, tin alloy plating, or gold plating is preferably provided.

Further, when a material whose adhesion to the wiring is reduced under a specific condition is used as the substrate, for example, the step of forming the wiring board and the step of mounting the semiconductor chip, and It is possible to prevent the wiring from being peeled off from the substrate in a transportation process or the like during that time. In addition, under a specific condition, the substrate can be peeled off in a state where the adhesive force with the wiring is reduced, so that after the substrate is peeled off, the substrate remains on the surface of the wiring. Can be prevented.

At this time, the substrate may be, for example, a substrate using a thermoplastic resin that is softened by heating and has a reduced adhesive force. Further, for example, a substrate using a material whose adhesive force changes by irradiation with light can be used.

Further, at this time, the substrate does not have to be a single material, and for example, a plate-shaped substrate provided with a thermoplastic resin on the surface thereof is used, and the substrate is coated with the thermoplastic resin. The wiring may be provided.

(2) Wiring (conductor pattern) on the surface of the substrate
A semiconductor chip is bonded onto a wiring board on which the external electrodes of the semiconductor chip and the wiring are electrically connected,
A method of manufacturing a semiconductor device, wherein after the periphery of the semiconductor chip is sealed with an insulator, the substrate is peeled off to expose the wiring, wherein the substrate of the wiring board has a region overlapping with a part of the wiring. This is a method of manufacturing a semiconductor device in which an opening is formed and a projecting conductor (bump) is formed in the opening.

According to the above-mentioned means (2), a wiring board is used in which a region of the substrate which overlaps with a part of the wiring is opened, and a projecting conductor (bump) is formed in the opening. By manufacturing a semiconductor device by using the above method, it is possible to easily obtain a semiconductor device in which the protruding conductor is provided on the exposed surface of the wiring after the substrate is peeled off.

Further, in the semiconductor device manufactured using the wiring board, since the protrusion-shaped conductor is formed on the exposed surface of the wiring, the protrusion when the semiconductor device is mounted on the mounting board. It is possible to widen the gap between the semiconductor device and the mounting substrate by connecting the conductors and the wiring (terminals) of the mounting substrate. for that reason,
An insulator can be easily poured between the semiconductor device and the mounting board, and the connection between the protruding conductor and the wiring (terminal) of the mounting board can be easily sealed.

Further, since the connecting portion between the projecting conductor and the wiring (terminal) of the mounting board is sealed, the connecting portion between the projecting conductor and the wiring (terminal) of the mounting board is oxidized or corroded. Can be prevented and deterioration of connection reliability and electrical characteristics can be prevented.

At this time, if a wiring board in which a bonding material is formed on the surface of the protruding conductor is used, the bonding material is removed after the substrate is peeled off as in the conventional semiconductor device manufacturing method. Need not be formed. Therefore, the manufacturing cost of the semiconductor device can be reduced.

When a material whose adhesiveness to the wiring is reduced under a specific condition is used as the substrate, for example, the step of forming the wiring board and the step of mounting the semiconductor chip, and It is possible to prevent the wiring from being peeled off from the substrate in a transportation process or the like during that time. In addition, under a specific condition, the substrate can be peeled off in a state where the adhesive force with the wiring is reduced, so that after the substrate is peeled off, the substrate remains on the surface of the wiring. Can be prevented.

At this time, the substrate may be, for example, a substrate using a thermoplastic resin that is softened by heating and has a reduced adhesive force. Further, for example, a substrate using a material whose adhesive force changes by irradiation with light can be used.

Further, at this time, the substrate does not have to be made of a single material. For example, a plate-shaped base material having a surface on which a thermoplastic resin is formed is used, and the substrate is coated with the thermoplastic resin. The wiring may be formed.

Hereinafter, the present invention will be described in detail with reference to the drawings together with the embodiments (embodiments).

In all the drawings for explaining the embodiments, parts having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted.

[0036]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment) FIGS. 1 and 2 are schematic views showing a schematic structure of a wiring board according to an embodiment of the present invention. FIG. 1 (a) is a plan view of the wiring board. Figure 1 (b) is
FIG. 2A is a sectional view taken along line AA ′ of FIG. 2A, and FIG. 2 is a partially enlarged sectional view of FIG.

1 (a) and 1 (b), and FIG.
In FIG. 1, 1 is a substrate, 101 is an insulating base material, 102 is a removable material (thermoplastic adhesive), 1A is a substrate opening, 2 is wiring, 2A is wiring land (external connection terminal), and 3 is a protrusion Is a conductor (bump), 401 is a first functional plating, and 402 is a second functional plating.

The wiring board of this embodiment is shown in FIGS.
As shown in (b) and FIG. 2, the wiring 2 is provided on the surface of the substrate 1. At this time, a land 2A is provided at one end of the wiring 2, and the land 2A is arranged in an array.

In the substrate 1, an opening 1A is provided below the land 2A of the wiring 2, and a projecting conductor 3 connected to the wiring 2 is provided in the opening. . At this time, the protrusion-shaped conductor 3 is, for example,
Made of copper plating or nickel plating, with a height of several μm
To several tens of μm.

The wiring board of this embodiment is a wiring board for manufacturing a semiconductor device by mounting a semiconductor chip, sealing the periphery of the semiconductor chip, and then peeling off the substrate. 1, the re-peelable material 102 is provided on the surface of the insulating base material 101, as shown in FIG. Here, the re-peelable material 102 is an adhesive material capable of peeling the wiring 2 in a later step, such as a thermoplastic adhesive.

Although not shown in FIG. 1B, a first functional plating 401 such as gold plating, tin plating or tin alloy plating is formed on the surface of the wiring 2, that is, the exposed surface. It is provided. A second functional plating 402 such as tin plating, tin alloy plating, or gold plating is also provided on the surface of the projecting conductor 3.

In the wiring board of this embodiment, the semiconductor chip is mounted on the area AR1 shown in FIG. 1A, for example. The substrate 1 is in the form of a tape elongated in one direction, and the pattern in the area AR2 shown in FIG. 1A is repeatedly provided.

FIG. 3 is a schematic view for explaining the method for manufacturing a wiring board of this embodiment, FIG. 3 (a) is a sectional view of a step of forming an opening in a substrate, and FIG. FIG. 3C is a cross-sectional view of the step of laminating the conductor film on the substrate, FIG. 3C is a cross-sectional view of the step of forming a protruding conductor, and FIG. 3D is a cross-sectional view of the step of patterning the conductor film.

When manufacturing the wiring board of this embodiment, first, for example, as shown in FIG. 3A, the substrate 1 in which the removable material 102 is formed on the surface of the insulating base material 101 is used.
The opening 1A is formed in the. At this time, the opening 1A
Is formed by, for example, punching using a mold.

Next, as shown in FIG. 3 (b), the substrate 1 having the opening 1A formed thereon and the conductor film 2'are attached to each other. At this time, for the conductor film 2 ′, for example, an electrolytic copper foil or a rolled copper foil is used, and the removable material 102 of the substrate 1 is used.
Attach it to the surface on which was formed. At this time, for example, a thermoplastic adhesive is used for the re-peelable material 102, and the temperature of the substrate 1 is heated to, for example, 200 ° C. to 260 ° C. and laminated.

Next, as shown in FIG. 3C, a projecting conductor 3 is formed in the opening 1A of the substrate 1. At this time, the protrusion-shaped conductor 3 is, for example, electrolytic copper plating or electrolytic nickel plating and has a height of several μm to several tens μm.
To be formed. Further, at this time, it is preferable to reduce the contact area of the projecting conductor 3 with the substrate 1 so that the projecting conductor 3 can be easily peeled off from the substrate 1.
As shown in (c), it is formed in a dome shape.

Next, as shown in FIG. 3D, the conductor film 2'is patterned to form the wiring 2. At this time, the wiring 2 is formed by using, for example, a subtractive method or a semi-additive method.

Then, the exposed surface of the wiring 2 is first
When the functional plating 401 is formed and the second functional plating 402 is formed on the surface of the protrusion-shaped conductor 3, as shown in FIG.
A wiring board as shown in can be obtained. At this time,
The first functional plating 401 and the second functional plating 402
May be formed using the same material, or different materials may be used to form the optimum plating for each function.

FIGS. 4 and 5 are schematic views for explaining a method for manufacturing a semiconductor device using the wiring board of this embodiment, and FIG. 4A is a sectional view of a process for mounting a semiconductor chip, 4B is a cross-sectional view of the step of sealing the semiconductor chip, and FIG. 5 is a cross-sectional view of the semiconductor device after the substrate is peeled off.

When manufacturing a semiconductor device using the wiring board of this embodiment, first, as shown in FIG. 4A, for example, a thermosetting adhesive 5 is used on the wiring 2 of the wiring board. To bond the semiconductor chip 6. Then, the external electrode 601 of the semiconductor chip 6 and the wiring 2 are electrically connected by the bonding wire 7. At this time, although omitted in FIG. 4A, the first functional plating 401 is formed on the surface of the wiring 2, and the second functional plating is formed on the surface of the projecting conductor 3. The plating 402 is formed.

Next, as shown in FIG. 4B, a sealing insulator 8 is formed and sealed around the semiconductor chip 6, the wiring 2, and the bonding wire 7.
At this time, the sealing insulator 8 is formed by transfer molding, for example.

Thereafter, for example, the entire temperature is changed from 170 ° C. to 20 ° C.
The re-peelable material (thermoplastic adhesive) 102 is heated to 0 ° C.
When the substrate 1 is peeled off in a state where the adhesive force is reduced, as shown in FIG. 5, the wiring 2 is exposed on the surfaces of the sealing insulator 8 and the thermosetting adhesive 5, and Wiring 2
It is possible to obtain a semiconductor device in which the protruding conductor 3 is formed on the land (external connection terminal) 2A. At this time, depending on the type of the re-peelable material 102, the substrate 1 can be peeled off without heating.

FIG. 6 is a schematic sectional view for explaining the function and effect of this embodiment.

In the semiconductor device manufactured using the wiring board of this embodiment, when the substrate 1 is peeled off, as shown in FIG. 5, the protrusion-shaped conductor is formed on the land 2A of the wiring 2. 3 is formed. That is, when the semiconductor device is mounted on a mounting board, as shown in FIG. 6, the protruding conductor is provided between the wiring 2 (land 2A) of the semiconductor device and the wiring (terminal) 901 of the mounting board 9. 3 intervenes. Therefore, only the height h of the protruding conductor 3
The gap SP between the semiconductor device and the mounting substrate can be widened.

Further, by widening the gap between the semiconductor device and the mounting substrate 9, the sealing resin can be easily poured, so that the wiring 2 (land 2A) of the semiconductor device and the wiring (terminal) of the mounting substrate 9 can be obtained. Oxidation and corrosion of the connection portion with 901 can be prevented. Therefore, it is possible to prevent deterioration of connection reliability and electrical characteristics when the semiconductor device is mounted.

As described above, according to the wiring board of this embodiment, the opening 1A is provided in the substrate 1, and the opening 1 is formed.
By providing the protruding conductor 3 in A, it is possible to easily obtain a semiconductor device in which the protruding conductor 3 is provided on the external connection terminal (land) 2A.

Further, since the protruding conductor 3 is provided on the external connection terminal (land) 2A of the semiconductor device,
When the semiconductor device is mounted on the mounting substrate 9, the gap between the semiconductor device and the mounting substrate 9 can be widened by the height h of the protruding conductor 3.

Further, by widening the gap between the semiconductor device and the mounting substrate 9, it becomes easier to pour the sealing resin. Therefore, the wiring 2 (land 2A) of the semiconductor device and the wiring (terminal) of the mounting substrate 9 are provided. Oxidation and corrosion of the connection portion with 901 can be prevented. Therefore, it is possible to prevent deterioration of connection reliability and electrical characteristics when the semiconductor device is mounted.

Further, a semiconductor device is manufactured by using a wiring board provided with the projecting conductors 3 and the second functional plating 402 on the surface thereof, so that the wiring 2 is removed after the substrate is peeled off. It is possible to omit the step of forming bumps or forming a bonding material on the external connection terminals (lands) 2A. Therefore, the manufacturing cost of the semiconductor device can be reduced.

Further, in the present embodiment, the substrate 1 uses the releasable material (thermoplastic adhesive) formed on the insulating base material 101, but the present invention is not limited to this. For example, a thermoplastic resin may be used. It goes without saying that a single substrate consisting of

Further, the re-peelable material 102 is not limited to the thermoplastic adhesive, but a material whose adhesive force changes by irradiation with light may be used.

FIG. 7 is a schematic view for explaining a modified example of the above embodiment, and FIGS. 7A and 7B are sectional views for explaining a method for manufacturing a wiring board.

In the above-described embodiment, as a method of manufacturing the wiring board, the conductor film 2'is formed on the substrate 1 in which the opening 1A is formed.
Although the example of laminating is described, the invention is not limited to this, and it can be manufactured by various methods. For example, first,
As shown in FIG. 7A, the substrate 1 and the conductor film 2 ′ are adhered to each other, and as shown in FIG.
From the back surface of the surface to which the conductor film 2'is bonded to the opening 1A
May be formed. At this time, the opening 1A is formed by irradiating a laser beam such as a carbon dioxide gas laser.

8 and 9 are schematic views for explaining an application example of the above-mentioned embodiment, FIG. 8 (a) is a plan view showing a schematic structure of a wiring board, and FIG. 8 (b) is FIG. (A) BB '
9A is a plan view of a semiconductor device manufactured using the wiring board shown in FIG. 8A, and FIG. 9B is a CC ′ line of FIG. 9A. FIG.

In the above-described embodiment, as shown in FIG. 1A, a wiring board for manufacturing an LGA type semiconductor device in which external connection terminals (lands) 2A of the wiring 2 are arranged in an array is used. Although explained using an example, the present invention is not limited to this, and for example,
It can also be used as a wiring board for manufacturing a QFN type semiconductor device.

When the wiring board as described in the above embodiment is used for manufacturing the QFN type semiconductor device, as shown in FIG.
As shown in FIGS. 8A and 8B, on the substrate 1,
The wiring 2 is provided so as to surround the outer periphery of the area AR1 on which the semiconductor chip is mounted. Further, for example, an island 2B is provided in the area AR1 on which the semiconductor chip is mounted.

At this time also, as shown in FIG. 8B, an opening is provided in the substrate 1 below the wiring 2, and a projecting conductor 3 is provided in the opening.

Using the wiring board as shown in FIGS. 8A and 8B, the semiconductor chip 6 is bonded onto the island 2B as shown in FIGS. 9A and 9B. Then
When the external electrode 601 of the semiconductor chip 6 and the wiring 2 are electrically connected by the bonding wire 7 and sealed by the sealing insulator 8, and then the substrate 1 is peeled off, the protrusions are formed on the wiring 2. It is possible to obtain a semiconductor device in which the striped conductor 3 is formed.

Further, the wiring board used when manufacturing the QFN type semiconductor device is not limited to the procedure described in the above embodiment, and for example, a lead frame formed by punching a copper plate to form leads is formed on the substrate 1. You may stick them together. Also in this case, the opening 1A is formed in the substrate 1 before the lead frames are bonded to each other or after the lead frames are bonded to each other, and the projecting conductor 3 is formed in the opening 1A. It is possible to easily obtain a semiconductor device in which the protruding conductor 3 is formed.

Although the present invention has been specifically described based on the above embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Of course.

[0071]

Of the inventions disclosed in the present invention,
The effects obtained by the representative ones will be briefly described as follows.

(1) In a semiconductor device in which a wiring board provided with wiring on the surface of a substrate is used, a semiconductor chip is mounted on the wiring, and then the substrate is peeled off to expose the wiring, the semiconductor device is When mounted on a mounting board, it is possible to facilitate sealing between the semiconductor device and the mounting board with an insulator.

(2) In a semiconductor device in which a wiring board having wirings provided on the surface of a substrate is used, a semiconductor chip is mounted on the wirings, and then the substrate is peeled off to expose the wirings. It is possible to prevent deterioration of connection reliability and electrical characteristics when mounting on a mounting board.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a schematic configuration of a wiring board of an embodiment according to the present invention, FIG. 1 (a) is a plan view of the wiring board, and FIG.
1B is a sectional view taken along the line AA ′ of FIG.

FIG. 2 is a schematic diagram showing a schematic configuration of a wiring board of the present embodiment, and is a partially enlarged cross-sectional view of FIG. 1 (b).

3A and 3B are schematic diagrams for explaining the method for manufacturing a wiring board according to the present embodiment. FIG. 3A is a sectional view of a step of forming an opening in a substrate, and FIG. 3B is a conductor on the substrate. 3C is a cross-sectional view of a step of laminating films, FIG. 3C is a cross-sectional view of a step of forming a conductor having a protrusion shape, and FIG. 3D is a cross-sectional view of a step of patterning a conductor film.

4A and 4B are schematic views for explaining a method for manufacturing a semiconductor device using the wiring board of the present embodiment, FIG. 4A is a cross-sectional view of a process of mounting a semiconductor chip, and FIG. It is sectional drawing of the process of sealing a semiconductor chip.

FIG. 5 is a schematic view for explaining the method for manufacturing a semiconductor device using the wiring board of the present embodiment, which is a cross-sectional view of the semiconductor device after the substrate is peeled off.

FIG. 6 is a schematic cross-sectional view for explaining the function and effect of this embodiment.

FIG. 7 is a schematic diagram for explaining a modified example of the embodiment, and FIGS. 7 (a) and 7 (b) are cross-sectional views for explaining a method for manufacturing a wiring board.

8A and 8B are schematic views for explaining an application example of the embodiment, FIG. 8A is a plan view showing a schematic configuration of a wiring board, and FIG. 8B is a B- of FIG. 8A. It is sectional drawing in a B'line.

FIG. 9 is a schematic diagram for explaining an application example of the embodiment, and FIG. 9 (a) is a plan view showing a schematic configuration of a semiconductor device using the wiring board shown in FIG. 8 (a). 9 (b) is FIG.
It is sectional drawing in the CC 'line of (a).

FIG. 10 is a schematic diagram showing a schematic configuration of a conventional wiring board, FIG. 10 (a) is a plan view of the wiring board, and FIG. 10 (b) is a cross section taken along line DD ′ of FIG. 10 (a). It is a figure.

11 is a schematic diagram showing a schematic configuration of a conventional wiring board, and is an enlarged cross-sectional view of FIG. 10 (b).

12A and 12B are schematic views for explaining a method for manufacturing a semiconductor device using the wiring board of the present embodiment, FIG. 12A is a cross-sectional view of a process of mounting a semiconductor chip, and FIG. It is sectional drawing of the process of sealing a semiconductor chip.

FIG. 13 is a schematic view for explaining the method for manufacturing a semiconductor device using the wiring board of the present embodiment, FIG. 13 (a) is a cross-sectional view of the semiconductor device after the substrate is removed, and FIG. b) is a cross-sectional view of the step of forming functional plating on the surface of the wiring.

FIG. 14 is a schematic cross-sectional view for explaining the problem.

[Explanation of symbols]

1 substrate 101 insulating base material 102 Removable material (thermoplastic adhesive) 1A Substrate opening 2 wiring 2A land (external connection terminal) 2B island 3 protruding conductor 401 First functional plating 402 Second functional plating 5 Thermosetting adhesive 6 semiconductor chips 601 Semiconductor chip external electrodes 7 Bonding wire 8 Insulator for sealing 9 Mounting board 901 Mounting board wiring (terminals) SP Gap between semiconductor device and mounting board

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Mamoru Mita             1-6-1, Otemachi, Chiyoda-ku, Tokyo             Standing Wire Co., Ltd. (72) Inventor Takayuki Yoshikazu             1-6-1, Otemachi, Chiyoda-ku, Tokyo             Standing Wire Co., Ltd.

Claims (6)

[Claims] 1. A wiring (conductor pattern) is provided on the surface of a substrate, and after mounting a semiconductor chip on the surface of the substrate on which the wiring is provided, the substrate is peeled off to form a semiconductor device. A wiring board, wherein the substrate has an opening in a region overlapping with a part of the wiring, and a protrusion-shaped conductor (bump) is provided in the opening. 2. The wiring board according to claim 1, wherein a bonding material is provided on the surface of the protruding conductor. 3. The substrate is provided with a re-peeling material whose adhesive force is reduced under a specific condition on a surface of a flat base material, and the wiring is provided on the re-peeling material. The wiring board according to claim 1 or 2, wherein the wiring board is provided. 4. A semiconductor chip is adhered onto a wiring board having wiring (conductor pattern) formed on the surface of a substrate, and the external electrodes of the semiconductor chip and the wiring are electrically connected to each other, and the periphery of the semiconductor chip is provided. After sealing with an insulator, a method of manufacturing a semiconductor device in which the substrate is peeled off to expose the wiring, wherein the substrate of the wiring board has an opening in a region overlapping with part of the wiring, A method for manufacturing a semiconductor device, wherein a conductor (bump) having a protrusion shape is formed in the opening. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the wiring board has a bonding material formed on a surface of the protruding conductor. 6. The substrate of the wiring board is characterized in that a re-peelable material whose adhesive strength is reduced under specific conditions is formed on a surface of a flat plate-shaped base material. Alternatively, the method of manufacturing a semiconductor device according to claim 5.