JP2003303784A5 - - Google Patents

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Publication number
JP2003303784A5
JP2003303784A5 JP2002104586A JP2002104586A JP2003303784A5 JP 2003303784 A5 JP2003303784 A5 JP 2003303784A5 JP 2002104586 A JP2002104586 A JP 2002104586A JP 2002104586 A JP2002104586 A JP 2002104586A JP 2003303784 A5 JP2003303784 A5 JP 2003303784A5
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JP
Japan
Prior art keywords
ion
temperature
ion source
wall
doping
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JP2002104586A
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English (en)
Japanese (ja)
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JP2003303784A (ja
JP4037149B2 (ja
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Priority claimed from JP2002104586A external-priority patent/JP4037149B2/ja
Publication of JP2003303784A publication Critical patent/JP2003303784A/ja
Publication of JP2003303784A5 publication Critical patent/JP2003303784A5/ja
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Publication of JP4037149B2 publication Critical patent/JP4037149B2/ja
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JP2002104586A 2002-04-05 2002-04-05 イオンドーピング装置及びイオンドーピング方法 Expired - Fee Related JP4037149B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002104586A JP4037149B2 (ja) 2002-04-05 2002-04-05 イオンドーピング装置及びイオンドーピング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002104586A JP4037149B2 (ja) 2002-04-05 2002-04-05 イオンドーピング装置及びイオンドーピング方法

Publications (3)

Publication Number Publication Date
JP2003303784A JP2003303784A (ja) 2003-10-24
JP2003303784A5 true JP2003303784A5 (enExample) 2005-09-08
JP4037149B2 JP4037149B2 (ja) 2008-01-23

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ID=29389735

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JP2002104586A Expired - Fee Related JP4037149B2 (ja) 2002-04-05 2002-04-05 イオンドーピング装置及びイオンドーピング方法

Country Status (1)

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JP (1) JP4037149B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266022A (ja) * 2004-05-25 2007-10-11 Matsushita Electric Ind Co Ltd プラズマ発生装置、これを用いたプラズマ処理装置および電子機器
JP5030484B2 (ja) * 2005-06-30 2012-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017037861A (ja) * 2013-12-18 2017-02-16 株式会社アルバック プラズマドーピング装置及び方法
CN109148246B (zh) * 2017-06-16 2024-02-02 上海凯世通半导体股份有限公司 离子注入设备及方法

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