JP2003258211A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a layer to be released is laminated on a base having a curvature, and to particularly provide a method for forming a light emitting unit having an OLED laminated on a display having a curvature or more particularly a base having a curvature. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of applying an external force to a support originally having curvature and elasticity, and adhering the support to the layer to be released formed on the board. When the board is thereafter released, the support is returned to an original shape by a restoring force, and the layer is curved along the shape of the support. Finally, when a transfer material originally having curvature is adhered to the layer, a device having a desired curvature is completed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a circuit composed of a thin film transistor (hereinafter referred to as a TFT) obtained by sticking a peeled layer to a substrate and transferring the layer. TFT on the support
The present invention relates to a method of transferring a circuit configured by.

[0002]

2. Description of the Related Art In recent years, TF has been used by using a semiconductor thin film (thickness of several to several hundred nm) formed on a substrate having an insulating surface.
Attention is paid to the technology for forming T. TFTs are widely applied to electronic devices such as ICs and electro-optical devices, and particularly, their development as a switching element for image display devices is urgently needed.

In addition, attempts have been made to mount various display devices such as navigation display devices, audio operation screen display devices, and instrument display devices on vehicles such as automobiles and airplanes.

Various applications using such an image display device are expected, but attention is particularly focused on their use in portable devices. Currently, glass and quartz are mainly used for substrates, but such display devices have the drawbacks of being thick, heavy, and easily cracked, and there is a strong demand for features such as thinness, light weight, and resistance to cracking. This is especially disadvantageous in the case of mobile devices. Further, it is generally difficult to increase the size of glass, quartz, and the like, which is particularly disadvantageous in mass production. Therefore, it has been attempted to form a TFT element on a substrate having flexibility, flexibility, or elasticity, typically a flexible plastic film or sheet.

However, since plastic has low heat resistance, the maximum temperature in the device manufacturing process must be lowered. Therefore, the electric characteristics of the TFT formed on the plastic are inferior to those of the TFT formed on the glass substrate. Therefore, a high-performance light emitting element and a liquid crystal display device using plastic have not been realized yet.

[0006]

If a light emitting device, in which an organic light emitting element is formed on a substrate having flexibility, flexibility, or elasticity, represented by a plastic film or sheet, or a liquid crystal is used. If a display device can be manufactured, it can be used for a display having a curved surface, a show window, etc., in addition to the features of being thin, lightweight, and hard to break. Therefore, its application is not limited to only mobile devices, and its application range is very wide.

In addition, when an image or a display of an instrument is to be installed in a limited space such as a driver's seat of a vehicle such as an automobile or an aircraft, various curved surfaces and curvatures of windows, ceilings, doors, dashboards, etc. If the display device is manufactured from the beginning so that the two coincide with each other, it can be mounted not only on a flat surface but also on a curved surface. Conventionally, the display is a flat surface, and the wall is cut to fit the space space of the vehicle or the flat display is fitted, and the mounting work is complicated.

An object of the present invention is to provide a method for manufacturing a semiconductor device in which a layer to be peeled is attached to a base material having a curvature. In particular, it is an object to provide a method for manufacturing a display having a curvature, specifically, a light-emitting device having an organic light-emitting element attached to a base material having a curvature, or a liquid crystal display device attached to a base material having a curvature. And

[0009]

The structure of the invention relating to the manufacturing method disclosed in the present specification comprises a first step of forming a support having a curvature and a transfer body, and a substrate having a rigidity higher than that of the support. A second step of forming a layer to be peeled including an element thereon, a layer having a curvature on the layer to be peeled including the element and the substrate, and a surface shape of the layer to be peeled including the element and the substrate Including a third step of adhering under a state of applying an external force so as to conform to the above step, a fourth step of peeling a layer to be peeled including the element to which the support is adhered from a substrate by a physical means, and the element Adhere the transfer body to the layer to be peeled,
A method of manufacturing a semiconductor device, comprising: a fifth step of sandwiching the element between the support and the transfer body, wherein the support to which a layer to be peeled including the element is adhered is the fourth step. A method of manufacturing a semiconductor device is characterized in that, at the end of the process, the shape that the device had at the end of the first step is completely or partially restored.

In the present invention, the support is for adhering to a layer to be peeled when peeling by a physical means, has a desired curvature, and has elasticity, that is, an external force is applied. In this case, it is not particularly limited as long as it has a property of exerting a restoring force for returning to the original shape, and a base material of any composition such as plastic, glass, metal, ceramics or the like may be used. In addition, in the present specification, the transfer body is
After being peeled off, it is to be adhered to the layer to be peeled off and is not particularly limited as long as it has a desired curvature.
It may be a substrate of any composition such as glass, metal or ceramics. In particular, if the highest priority is to reduce weight, film-like plastic substrates such as polyethylene terephthalate (PET), polyether sulfone (PES),
Polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT) and the like are preferable.

Further, in the above structure, if the radius of curvature of the support at the end of the first step is Ri, the radius of curvature at the end of the third step is Rm, and the radius of curvature at the end of the fourth step is Rf, Ri ≦ It is characterized in that Rf ≦ Rm.

In the above structure, when forming a light emitting device having an organic light emitting element, the support is a sealing material, and the element is a self-luminous element.

In the above structure, when a liquid crystal display device is formed, the support is a counter substrate, the element has a pixel electrode, and the pixel electrode and the counter substrate are provided between the pixel electrode and the counter electrode. Is characterized by being filled with a liquid crystal material.

Further, in the above construction, at least one of the support and the transfer body is transparent.

Further, in the above structure, the radius of curvature of the support and the transfer body is in the range of 50 cm to 200 cm.

In the above structure, the peeling method is not particularly limited, and a separation layer is provided between the layer to be peeled and the substrate, and the separation layer is removed with a chemical solution (etchant) to remove the layer to be peeled and the substrate. And a separation layer made of amorphous silicon (or polycrystalline silicon) provided between the layer to be peeled and the substrate, which is passed through the substrate and irradiated with laser light to be included in the amorphous silicon. The released hydrogen,
It is possible to use a method in which voids are generated to separate the layer to be peeled from the substrate. Note that in the case of peeling by using laser light, it is desirable to form the element included in the layer to be peeled at a heat treatment temperature of 410 ° C. or lower so that hydrogen is not released before the peeling.

Further, as another peeling method, a peeling method may be used in which peeling is performed by utilizing the film stress between the two layers. In this peeling method, a metal layer, preferably a metal nitride layer provided on a substrate is provided, an oxide layer is further provided in contact with the metal nitride layer, an element is formed on the oxide layer, and a film formation treatment or 50
Film peeling (peeling) even after heat treatment at 0 ° C or higher
It can be easily separated by physical means in the inside of the oxide layer or at the interface without causing the phenomenon. In order to further promote peeling, heat treatment or laser light irradiation treatment may be performed before peeling by the physical means.

Further, a display having a curved surface can be realized by each of the above-mentioned manufacturing methods, and an automobile, an aircraft, a ship,
It can be installed in vehicles such as trains. The inner walls and ceiling of the vehicle have a space that is as wide as possible, and are constructed with smooth curved surfaces so that it does not cause a problem if the human body hits for some reason. TFT on these curved surfaces
It is also possible to mount a display device having an organic light emitting element as a meter or a lighting device. The driving method of the display device having the TFT and the organic light emitting element is preferably an active matrix type, but may be a passive type.

For example, by displaying a display device having an organic light emitting element having a curvature matching the curved surface of the window as a base material of a vehicle without being curved and adhering as it is, an image or a display of an instrument is displayed. You can In particular, a display device having an organic light emitting device can be made very thin and lightweight, and the space space does not change. In the case of adhering a display device having an organic light emitting element to a window of a vehicle, it is desirable that the substrate, the electrodes and the wiring are transparent, and a film that blocks external light may be provided. Also, when not displaying, it is preferable that the outside scenery can be confirmed without any problem.

Further, by adhering a display device having an organic light emitting element having a curvature matching these curved surfaces along an inner wall of a vehicle, a door, a seat, or a dashboard of a car as it is without being curved. Can also display images and instruments. Since the display device manufactured by the present invention only needs to be attached along a curved surface,
The installation work is very simple, and there is no need to partially process the inner wall, door, seat and dashboard. Further, in a car, for example, in the case of a right steering wheel, there is a blind spot because there is a part of the vehicle body (a part between the window glasses) on the left rear side. The driver can confirm the blind spot by attaching the display device attached, and further by attaching a camera capable of photographing the blind spot direction outside the vehicle and connecting the cameras to each other. In particular, a display device having an organic light emitting element is a display device that is stronger against moving images and has a wider viewing angle than a liquid crystal display device.

Further, a display device having an organic light emitting element, which has a vehicle ceiling as a base material and has a curvature matching the curved surface of the ceiling, is adhered as it is without being curved, thereby displaying an image and illuminating the inside. It can be carried out. Further, for example, in a car, a display device manufactured by the present invention is attached to a portion between a ceiling and each window glass, and a camera capable of photographing an external view corresponding to each display device is attached to the outside of the car and connected to each other. Then, the person in the car
You can enjoy the outside scenery like an open car while you are inside the car. Further, for example, when a display device manufactured by the present invention is attached to a ceiling or a side wall of a train or a train, an advertisement or a television image can be displayed without reducing a space space. In particular, a display device having an organic light emitting element has a wider viewing angle than a liquid crystal display device.

In the above vehicle, if the radius of curvature of the curved surface of the mounted display device is 50 cm to 200 cm, the TFT is
The organic light emitting device can be driven without any problem.

The semiconductor device in the present invention refers to all devices that can function by utilizing semiconductor characteristics, and electro-optical devices, light emitting devices, semiconductor circuits, and electronic equipment are all semiconductor devices.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below based on a typical manufacturing procedure thereof with reference to FIGS.

FIG. 1 (1) shows a support 111 and a transfer body 11.
The 1st process of producing 2 is shown. It is important that these are made to have a desired curvature depending on the application, and particularly to have elasticity with respect to the support 111. The radius of curvature of the support 111 at the end of the first step is defined as Ri.
Raw materials, materials, molding methods, etc. are not particularly limited. The thickness is also not particularly limited. Typically, the thickness may be about 100 μm. Generally, a film having a film thickness of 200 μm or less is called a film and a film having a film thickness of 200 μm or more is called a sheet, but the support 111 and the transfer member 112 may be a film or a sheet. The support 111 may be thin enough to have elasticity. Here, both the support 111 and the transfer body 112 are made of plastic. Using a general thermoplastic or thermosetting resin as a raw material, a general plastic molding method, that is, plasticization to heat the raw material to make it easily flowable, shaping into a desired shape using a mold, It may be molded by a process such as cooling or solidification for stabilizing the shape by a curing reaction. For example, a process in the case of compression-molding a thermosetting resin is shown in FIG. First, as shown in FIG. 2A, a mold (lower mold) 211b is filled with a thermosetting resin 212 in a state of being heated and having high fluidity.
Thereafter, as shown in FIG. 2B, a mold (upper mold) 211a is used to apply pressure from the direction of the arrow. If the molds 211a and 211b are heated while maintaining this pressure, the fluidity of the resin will decrease from a certain point and the resin will be cured. After this, the mold 211a
And 211b are opened to obtain a molded product.

Further, a coating film (not shown) having various functions can be laminated on the support 111 or the transfer body 112 in a single layer or a plurality of layers. Generally, a barrier film that blocks water, oxygen and the like, a base film that improves the adhesiveness of an adhesive, a protective layer that enhances chemical resistance and physical strength, and the like are laminated. For example, a silicon nitride thin film having a thickness of about 100 nm can be formed on the support 111 by a sputtering method. However, at least one of the support 111 and the transfer body 112 needs to have a finite light transmittance, that is, be transparent.

In FIG. 1B, the layer to be peeled 12 is formed on the substrate 122.
The 2nd process of producing 1 is shown. The peeled layer is used for various elements such as TFT (thin film diode, silicon PIN).
It is composed of a photoelectric conversion element and a silicon resistance element formed of a junction), an organic light emitting element, and the like, and generally includes an electrode, a wiring, an insulating film, and the like. The rigidity of the substrate 122 is higher than that of the support 111. In FIG. 1B, the substrate 122 is illustrated as being completely covered by the layer to be peeled 121 for simplicity, but there is no problem even if part of the substrate 122 is exposed.

The substrate 122 and the layer to be peeled 1 are shown in FIG.
A third step of adhering the support 111 on the substrate 21 is shown. First, an external force is applied to the support body 111 to make it into a shape that matches the surface shapes of the substrate 122 and the peeled layer 121. For example, originally
The support 111 bent as shown in (1) may be adhered in a state of being pulled straight as shown in FIG. 1 (3).
After the bonding, the restoring force of returning to the initial shape acts on the support body 111, but since the bonded substrate 122 has higher rigidity, the support body 111 is in a state of being pulled straight at this stage. I am maintaining. That is, when the radius of curvature of the support 111 at the end of the third step is defined as Rm, the curve of the support 111 is generally gentler than at the end of the first step, and therefore Ri ≦ Rm in general. As the bonding method, the support 111 and the layer to be peeled 121 or the support 111
It is preferable that the substrate 122 and the substrate 122 are in close contact with each other, but a finite space may be provided inside.

The type of adhesive (not shown) and its application method are not particularly limited. That is, an adhesive such as a reaction curable type, a thermosetting type, a photocurable type, or an anaerobic type is screen printed,
It may be applied by a technique such as drawing with a dispenser or discharge with a spray. Here, an ultraviolet curable adhesive, which is a type of photo-curing type, is applied by a dispenser. Support 11
After applying the adhesive to the first side or the layer to be peeled 121 side, the adhesive is cured by irradiating with ultraviolet rays. In general, the peeled layer 121 has a portion that is damaged when irradiated with ultraviolet rays, so use an appropriate light-shielding mask that hides the area or cure only the adhesive and not damage the other areas. Damage may be avoided by irradiating ultraviolet rays having such selective energy.

In FIG. 1D, the layer to be peeled 121 is formed on the substrate 122.
The 4th process of peeling from is shown. The peeling method is not particularly limited. Here, a peeling method that utilizes the film stress between the metal layer or the nitride layer and the oxide layer, which is a peeling method that is not restricted by the heat treatment temperature or the type of the substrate, is used. First, Fig. 1
Before obtaining the state of (2), a nitride layer or a metal layer (not shown) is formed on the substrate 122. Typical examples of the nitride layer or the metal layer are Ti, W, Al, Ta and M.
o, Cu, Cr, Nd, Fe, Ni, Co, Ru, R
A single layer made of an element selected from h, Pd, Os, Ir, and Pt, or an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof, or a nitride thereof, for example, titanium nitride, A single layer of tungsten nitride, tantalum nitride, molybdenum nitride, or a stacked layer thereof may be used. Then, an oxide layer (not shown) is formed on the nitride layer or the metal layer. As a typical example of the oxide layer, silicon oxide, silicon oxynitride, or a metal oxide material may be used. Note that the oxide layer may be formed by a method such as a sputtering method, a plasma CVD method, or a coating method. By appropriately setting the film thicknesses of the nitride layer or the metal layer, the oxide layer, and both layers in the range of 1 nm to 1000 nm, the film stress of both layers can be made different from each other. In addition, an insulating layer or a metal layer may be provided between the substrate 122 and the nitride layer or the metal layer to improve adhesion with the substrate 122. Then, a semiconductor layer is formed over the oxide layer,
The layer to be peeled 121 may be obtained. In addition, the peeling method,
Even if the film stress of the oxide layer and the film stress of the nitride layer or the metal layer are different from each other, film peeling or the like does not occur due to the heat treatment in the manufacturing process of the layer to be peeled. Further, in the above peeling method, since the film stress of the oxide layer and the film stress of the nitride layer or the metal layer are different from each other, the peeling can be performed with a relatively small force. It is important to prevent cracks from being generated when the peeled layer 121 is peeled off.

As described above, the layer to be peeled 121 formed on the oxide layer can be separated from the substrate 122. The important point is that the support body 111 returns to the original shape at the end of the first step due to the restoring force at this stage. Along with this, the peeled layer 121 adhered under the support 111 also curves along the support 111. When the radius of curvature of the support 111 at the end of the fourth step is defined as Rf, the shape returns to the shape at the end of the first step.
The curve of 11 becomes steeper than the end of the third step, that is, R
f ≦ Rm. On the other hand, since the support 111 is generally not completely elastic and the layer to be peeled 121 is adhered, the curve is generally gentler than that at the end of the first step, that is, Ri ≦ Rf. Therefore, in general Ri
≦ Rf ≦ Rm.

In FIG. 1 (5), the transfer body 112 and the peeled layer 12 are separated.
The process of adhering to No. 1 is shown. Regarding the shape and thickness of the transfer body 112, the shape and thickness of the support 111 and the layer to be peeled 12
In consideration of the thickness of No. 1, the peeled layer 1 curved in FIG.
Although it is not particularly limited as long as it is manufactured so as to match the surface shape of 21, it is preferable that it has elasticity like the support 111.

The bonding direction of the support 111 in FIG. 1 (2) is not particularly limited. However, when a plurality of TFTs are provided in the layer to be peeled 121, the channel length directions of these TFTs are all arranged in the same direction, and the channel length direction and the support 111 are in the state of FIG. It is more preferable to bond so as to be parallel to the direction having no curvature. This is because after peeling the substrate 122 in FIG. 1D, when the support 111 to which the layer to be peeled 121 is bonded is restored to its original shape by the restoring force, the T in the layer to be peeled 121 is restored.
This is because it is possible to minimize the influence on the FT.

In the case of manufacturing a liquid crystal display device, the support may be an opposite substrate, and the support may be adhered to the layer to be peeled using a sealing material as an adhesive. In this case, the element provided in the layer to be peeled has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate.

In the case of manufacturing a light emitting device represented by a device having an organic light emitting element, a support is used as a sealing material, and a substance that promotes deterioration of the organic compound layer such as water or oxygen is intruded from the outside. It is preferable to completely shield the light emitting device from the outside so as to prevent it. Further, when a light-emitting device represented by a device having an organic light-emitting element is manufactured, not only the support but also the transfer body is sufficiently infiltrated with a substance that promotes deterioration of the organic compound layer such as water and oxygen from the outside. It is preferable to prevent this. Further, if it is important to suppress the deterioration due to the permeation of water or oxygen, by forming a thin film in contact with the layer to be peeled after peeling, to repair the cracks generated during peeling, as a thin film in contact with the layer to be peeled By using a film having thermal conductivity, specifically, aluminum nitride or aluminum oxynitride, the effect of diffusing the heat generation of the element and suppressing deterioration of the element can be obtained, and at the same time, the transfer body, specifically, the plastic substrate. It is possible to obtain the effect of protecting the deformation and deterioration of the. The film having thermal conductivity also has an effect of preventing impurities such as water and oxygen from entering from the outside.

The present invention having the above structure will be described in more detail with reference to the following embodiments.

[0037]

EXAMPLES Example 1 In this example, FIG. 3 shows a procedure for manufacturing a light emitting device having an organic light emitting element (OLED).

As shown in FIG. 3A, a first material layer 312 is formed on the substrate 311. The first material layer 312 may have a compressive stress or a tensile stress immediately after film formation, but an abnormality such as peeling occurs due to heat treatment or laser light irradiation in forming the layer to be peeled. 1 to 1 × 10 ¹⁰ (Dyne / c
It is important to use materials with tensile stress in the m ² ) range. Typically, nitrides or metals are preferred,
A typical example thereof is a single layer made of an element selected from W, WN, TiN, and TiW, an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof. Note that the first material layer 312 may be formed by a sputtering method.

As the substrate 311, glass, quartz, ceramic or the like can be used. Alternatively, a semiconductor substrate typified by silicon or a metal substrate typified by stainless steel may be used. Here, a glass substrate (# 1737) having a thickness of 0.7 mm is used.

Next, a second material layer 313 is formed on the first material layer 312. As the second material layer 313,
Use a material that does not cause abnormalities such as peeling due to heat treatment or laser light irradiation in forming the layer to be peeled, and has a compressive stress within the range of 1 to 1 × 10 ¹⁰ (Dyne / cm ² ) after forming the layer to be peeled This is very important. An oxide is preferable for the second material layer 313, and a typical example thereof includes silicon oxide, silicon oxynitride, a metal oxide material, or a stacked layer thereof. Note that the second material layer 313 may be formed by a sputtering method. When the second material layer 313 is formed by a sputtering method, a rare gas typified by an argon gas is introduced into the chamber and the second material layer 313 is formed.
A trace amount of rare gas element is included in it.

First material layer 312 and second material layer 313
In, the respective film thicknesses may be appropriately set in the range of 1 nm to 1000 nm, and the internal stress in the first material layer 312 and the internal stress in the second material layer 313 may be adjusted.

Although FIG. 3 shows an example in which the first material layer 312 is formed in contact with the substrate 311, in order to simplify the process, the first material layer 312 is formed between the substrate 311 and the first material layer 312. An insulating layer or a metal layer serving as a buffer layer is provided, and the substrate 31
The adhesion to 1 may be improved.

Next, a layer to be peeled 314a including a TFT is formed on the second material layer 313. The peeled layer 314a is a pixel portion TFT (n-channel type TFT and p-channel type TF).
T), drive circuit TFTs (n-channel TFTs and p-channel TFTs) provided around the pixel portion, and wirings. Then, after forming an insulating film covering each TFT, a cathode or an anode electrically connected to the TFT provided in the pixel portion is formed. Next, an insulator called a bank is formed on both ends so as to cover the end of the cathode or the anode. Also,
If necessary, a passivation film (protective film) made of a nitride film may be formed so as to cover the TFT. In addition, as a process for forming the layer to be peeled 314a, heat treatment can be performed in a range that the substrate 311 can withstand. Note that the internal stress in the second material layer 313 and the first material layer 312
314a even if the internal stresses in the layers are different
Film peeling does not occur due to the heat treatment in the manufacturing process.

Next, a peeled layer 314b including an organic light emitting element is formed on the peeled layer 314a including a TFT. That is, E on the cathode or anode whose both ends are covered with banks.
An L layer (organic compound material layer) is formed. When the lower layer of the EL layer is a cathode, an anode may be provided on the EL layer, and when the lower layer of the EL layer is an anode, a cathode may be provided on the EL layer.

As the EL layer, a layer for injecting, transferring, and recombining both electron and hole carriers, that is, a light emitting layer, a carrier transporting layer, a carrier injecting layer and the like can be freely combined. As the organic EL material, a low molecular weight material, a high molecular weight material, or a combination of both can be used. Also,
As the EL layer, it is possible to use a thin film made of a light emitting material that can emit light from a singlet excited state or a triplet excited state (the former is generally fluorescent, and the latter is generally phosphorescent). As a film forming method, a dry method such as a vacuum evaporation method or an electron beam (EB) evaporation method is generally used for a low molecular weight material, and a wet method such as a spin coating method or an inkjet printing method is generally used for a high molecular weight material. It is also possible to use an inorganic material such as silicon carbide for the carrier transport layer and the carrier injection layer. Known materials can be used as these organic EL materials and inorganic materials. Note that the EL layer is formed as a thin film layer having a total thickness of about 100 nm. Therefore, it is necessary to improve the flatness of the surface formed as the cathode or the anode.

The material used for the cathode is a metal having a small work function (alkali metal or alkaline earth metal),
It is preferable to use an alloy containing these. For example, an organic light emitting device using an aluminum alloy (AlLi alloy) containing a small amount of Li (lithium), which is one of alkali metals, as a cathode generally has good emission characteristics and has a reduced brightness even after long-time lighting. Is small. Alternatively, a single metal (Al or the like) whose work function is not so small is laminated on an ultrathin film (about 1 nm) of oxides and fluorides of alkali metals and oxides and fluorides of alkaline earth metals. Similarly, good device characteristics can be obtained. For example, as a cathode
Similar characteristics can be obtained by using a structure in which Al is laminated on an extremely thin film of LiF, instead of the AlLi alloy.

As the conductive film used for the anode, a material having a work function larger than that of the material forming the cathode is used.
In particular, as a transparent conductive film, tin oxide (SnO ₂ ) based material,
Zinc oxide (ZnO) -based and indium oxide (In ₂ O ₃ ) -based materials, typically ITO (indium oxide-tin oxide alloy), IZO (indium oxide-zinc oxide alloy), and the like are widely used. Further, a material having a sheet resistance lower than that of ITO, specifically, a material such as platinum (Pt), chromium (Cr), tungsten (W), or nickel (Ni) can be used.

Through the above steps, the layer 31 containing the organic light emitting device
4b and a layer 31 including a TFT connected to the organic light emitting element
4a is laminated to form a layer to be peeled. Incidentally, when controlling the current flowing through the organic light emitting element by the TFT, there are roughly two methods. Specifically, there are a method of controlling current in a voltage range called a saturation region and a method of controlling current in a voltage range until reaching the saturation region. In this specification, the range of Vd in which the current value is almost constant is called the saturation region in the Vd-Id curve. The present invention is not limited to the driving method of the organic light emitting device, and any driving method can be used.

Then, a treatment for partially lowering the adhesion between the first material layer 312 and the second material layer 313 is performed.
The treatment for partially lowering the adhesion is a treatment for partially irradiating the second material layer or the first material layer with laser light along the periphery of the area to be peeled off, or
This is a process of locally applying pressure from the outside along the periphery of the region to be peeled off to damage the inside of the second material layer or a part of the interface. Specifically, a hard needle may be vertically pressed with a diamond pen or the like and a load may be applied to move the needle. Preferably, a scriber device is used, the pushing amount is 0.1 mm to 2 mm, and the blade is moved by applying pressure. As described above, it is important to create a part where the peeling phenomenon is likely to occur before the peeling, that is, a trigger, and by performing a pretreatment that selectively (partially) lowers the adhesion, Defects are eliminated, and the yield is improved.

Next, as shown in FIG. 3B, a flexible printed circuit (FPC) 321 is attached to a terminal electrode provided at the end of the lead-out wiring connected to the TFT provided on the peeled layer 314a. Paste.

Then, the support 32 is bonded with the first adhesive 322.
3 and the layers to be peeled 314a and 314b are bonded. The support 323 originally having a curvature and elasticity is bonded with an external force applied. After the bonding, a restoring force acts on the support 323, but the support does not return to the original shape at this stage because the substrate 311 has higher rigidity. In the case of an organic light emitting device, the support 323 is generally a sealing material, and has a function of suppressing deterioration of the EL layer, the anode, the cathode, etc., mainly due to intrusion of water or oxygen from the outside.

Examples of the first adhesive 322 include reaction curing type, thermosetting type, photocuring type, anaerobic type and the like. The composition of these adhesives may be any of epoxy, acrylate, silicone, and the like. However, since the organic light emitting element is weak against water and oxygen, it is desirable that the material has a high barrier property against water and oxygen. The adhesive is formed by, for example, a coating method. The adhesive may be applied to either the support side or the peeled layers 314a and 314b side. In this embodiment, an ultraviolet curable adhesive is used as the first adhesive 322. In this case, the first adhesive 322 is cured by irradiating with ultraviolet rays. The direction of irradiating ultraviolet rays can be appropriately determined by the practitioner according to the structure of the organic light emitting device, the manufacturing method, the circuit structure of the pixel, etc., that is, the substrate 3
The irradiation may be performed from 11 or from the support 323. However, the EL layer is generally damaged by UV irradiation, so use a light-shielding mask that hides areas where you do not want to apply UV light, or adjust the energy of UV light to cure only the adhesive and leave it on other parts. Should not be damaged.

Then, the substrate 311 provided with the first material layer 312 is peeled off from the region where the adhesiveness is partially reduced, and is directed in the direction of the arrow in FIG.
Is peeled off by physical means. Since the second material layer 313 has a compressive stress and the first material layer 312 has a tensile stress, a relatively small force (eg, human hand, wind pressure of gas blown from a nozzle, ultrasonic waves, etc.). It can be peeled off with.

Thus, the layers to be peeled 314a and 314b formed on the second material layer 313 can be separated from the substrate 311. At this stage, the supporting body 323 returns to its original shape due to the restoring force, and accordingly, each layer adhered to the supporting body 323 is also curved (FIG. 3 (4)).

Next, as shown in FIG. 3 (5), the transfer material 351 and the second material layer 313 (and the layers to be peeled 314a and 314b) are bonded to each other with the second adhesive 352.

As the second adhesive 352, various adhesives such as reaction-curing type, thermosetting type, photo-curing type and anaerobic type are used. In this embodiment, an ultraviolet curable adhesive is used as the second adhesive 352. The direction of irradiation with ultraviolet rays can be appropriately determined by the practitioner according to the structure of the organic light emitting device, the manufacturing method, the circuit structure of the pixel, and the like. . However,
As in the case of the first adhesive 322, a light-shielding mask is used to hide the places where ultraviolet rays are not desired to be irradiated, or the energy of ultraviolet rays is adjusted to cure only the adhesive and damage other parts. Need not to.

Through the above steps, a light emitting device including the peeled layers 314a and 314b on the second adhesive 352 and the transfer body 351 can be manufactured. A feature of such a light emitting device is that it has a curvature of 50 cm to 200 cm without applying an external force. Note that an oxide layer 313 which is a second material layer is provided between the second adhesive 352 and the peeled layer 314a. In the light emitting device thus obtained, the second material layer 313 is formed by the sputtering method, and the second material layer 31 is formed.
Since a small amount of rare gas element is contained in 3, the entire device can be made flexible.

The light emitted from the organic light emitting element is generated by the support 3
It is possible to take out from both the 23 side and the transfer body 351 side. Top emission or upward emission (also referred to as top emission) is taken when emitting light only from the support 323 side, and bottom emission or downward emission is taken when emitting light only from the transfer body 352 side.
3 and the case where the light emission is extracted from both sides of the transfer body 352 is called double emission or both emission. In any case, in order to take out the light emitted from the organic light emitting device, one of the support 323 and the transfer body 352 needs to be transparent. The light emitting direction can be appropriately determined by the practitioner according to the configuration of the organic light emitting element, the manufacturing method, the circuit configuration of the pixel, and the like.

[Embodiment 2] In this embodiment, a procedure for manufacturing a liquid crystal display device is shown in FIG.

As shown in FIG. 4A, a first material layer 412 is formed on the substrate 411. The first material layer 412 may have a compressive stress or a tensile stress immediately after film formation, but an abnormality such as peeling occurs due to heat treatment or laser light irradiation in forming the layer to be peeled. 1 to 1 × 10 ¹⁰ (Dyne / c
It is important to use materials with tensile stress in the m ² ) range. Typically, nitrides or metals are preferred,
A typical example thereof is a single layer made of an element selected from W, WN, TiN, and TiW, an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof. Note that the first material layer 412 may be formed by a sputtering method.

As the substrate 411, glass, quartz, ceramic or the like can be used. Alternatively, a semiconductor substrate typified by silicon or a metal substrate typified by stainless steel may be used. Here, a glass substrate (# 1737) having a thickness of 0.7 mm is used.

Next, a second material layer 413 is formed on the first material layer 412. As the second material layer 413,
Use a material that does not cause abnormalities such as peeling due to heat treatment or laser light irradiation in forming the layer to be peeled, and has a compressive stress within the range of 1 to 1 × 10 ¹⁰ (Dyne / cm ² ) after forming the layer to be peeled This is very important. An oxide is preferable for the second material layer 413, and a typical example thereof includes silicon oxide, silicon oxynitride, a metal oxide material, or a stacked layer thereof. Note that the second material layer 413 may be formed by a sputtering method. When the second material layer 413 is formed by a sputtering method, a rare gas typified by an argon gas is introduced into the chamber to form the second material layer 413.
A trace amount of rare gas element is included in it.

First material layer 412 and second material layer 413
In, the respective film thicknesses may be appropriately set in the range of 1 nm to 1000 nm, and the internal stress in the first material layer 412 and the internal stress in the second material layer 413 may be adjusted.

Further, although FIG. 4 shows an example in which the first material layer 412 is formed in contact with the substrate 411 for the purpose of simplifying the process, between the substrate 411 and the first material layer 412. An insulating layer or a metal layer serving as a buffer layer is provided, and the substrate 41
The adhesion to 1 may be improved.

Next, a layer to be peeled 414 is formed on the second material layer 413. The peeled layer 414a is a pixel portion TFT
(N-channel type TFT), pixel electrode, storage capacitor, drive circuit TFT (n-channel type TFT and p-channel type TFT) provided in the periphery of the pixel portion, and wiring. In this embodiment, a reflection type liquid crystal display device that emits light by using only external light will be considered. In this case, a metal having a high light reflectance, such as aluminum or silver, may be used as the pixel electrode. still,
Even if the internal stress in the second material layer 413 and the internal stress in the first material layer 412 are different, the layer to be peeled 4
No film peeling occurs due to the heat treatment in the manufacturing process of 14.

Next, an alignment film is formed on the peeled layer 414 in the pixel portion and rubbed in one direction. As a result, the molecules of the liquid crystal to be injected later can be aligned in one direction. Next, columnar or spherical spacers 415 are formed by patterning or scattering. This allows
The thickness of the liquid crystal layer to be injected later can be controlled.

Then, a treatment for partially lowering the adhesion between the first material layer 412 and the second material layer 414 is performed.
The treatment for partially lowering the adhesion is a treatment for partially irradiating the second material layer or the first material layer with laser light along the periphery of the area to be peeled off, or
This is a process of locally applying pressure from the outside along the periphery of the region to be peeled off to damage the inside of the second material layer or a part of the interface. Specifically, a hard needle may be vertically pressed with a diamond pen or the like and a load may be applied to move the needle. Preferably, a scriber device is used, the pushing amount is set to 0.1 mm to 2 mm, and pressure is applied for movement. As described above, it is important to create a part where the peeling phenomenon is likely to occur before the peeling, that is, a trigger, and by performing a pretreatment that selectively (partially) lowers the adhesion, Defects are eliminated, and the yield is improved.

Next, as shown in FIG. 4B, the FPC 421 is attached to the terminal electrode provided at the end of the lead-out wiring connected to the TFT provided in the layer to be peeled 414.

Next, the support 423 and the substrate 411 (more precisely, the oxide layer 413) are bonded to each other with the sealing agents 422a and 422b. However, in order to inject liquid crystal later, 422a
The liquid crystal injection port is provided as shown in. The support 424 originally having a curvature and elasticity is bonded with an external force applied. After the bonding, a restoring force acts on the support 424, but the substrate 411 has higher rigidity, so that it does not return to the original shape at this stage. The presence of the spacer 415 maintains the distance between the support body 423 and the substrate 411. In the case of a liquid crystal display device, the support 424 is generally a counter substrate, and a color filter, a polarizing plate, a common electrode, an alignment film and the like (not shown) are formed in advance. In the case of a reflective liquid crystal display device, a transparent conductive film (ITO, IZO, etc.) may be used for the common electrode.

Examples of the sealing agents 422a and 422b include reaction curing type, thermosetting type, photocuring type, anaerobic type and the like. The composition of these sealants may be, for example, any of epoxy, acrylate, and silicone. The sealing agent is formed by, for example, a coating method. In addition, the sealant is the support 423.
Side or the substrate 411 side may be applied.
In this embodiment, an ultraviolet curable sealant is used as the sealant 422. In this case, the sealant 422 is cured by irradiating it with ultraviolet rays. The ultraviolet ray may be emitted from the support 423 side or the substrate 411 side.
However, it is necessary to use a light-shielding mask in a place where it is damaged by ultraviolet rays, or to adjust the energy of ultraviolet rays so that only the sealant is hardened and other portions are not damaged.

After that, after the liquid crystal 424 is injected through the liquid crystal injection port, the liquid crystal injection port is completely sealed with a sealant (not shown). The composition of the sealant may be, for example, any of epoxy, acrylate, silicone and the like.

Next, the area where the adhesion is partially reduced is peeled off, and the substrate 411 provided with the first material layer 412 is directed in the direction of the arrow in FIG. 4C.
Is peeled off by physical means. Since the second material layer 414 has a compressive stress and the first material layer 412 has a tensile stress, a relatively small force (eg, human hand, wind pressure of gas blown from a nozzle, ultrasonic waves, etc.). It can be peeled off with.

In this way, the layer to be peeled 414 formed on the second material layer 413 can be separated from the substrate 411. At this stage, the supporting body 423 returns to its original shape due to the restoring force, and accordingly, each layer bonded to the supporting body 423 is also curved (FIG. 4 (4)).

Next, as shown in FIG. 4 (5), the transfer material 451 and the second material layer 413 are bonded to each other with an adhesive 452. As the adhesive 452, various kinds of adhesives such as a reaction curable type, a thermosetting type, a photocurable type, and an anaerobic type are used. In this embodiment, an ultraviolet curable adhesive is used as the adhesive 452. Ultraviolet rays may be emitted from the transfer body 451 side or the support body 423 side. However, it is necessary to use a light-shielding mask in a place where ultraviolet rays are not desired to be irradiated, or to adjust the energy of ultraviolet rays so that only the adhesive is hardened and other portions are not damaged.

Through the above steps, a liquid crystal display device including the peeled layer 414 on the second adhesive 452 and the transfer body 451 can be manufactured. A characteristic of such a semiconductor device is that it has a curvature of 50 cm to 200 cm without applying an external force. The adhesive 452 and the layer to be peeled 414
Between the two is an oxide layer 413 which is a second material layer.
The liquid crystal display device thus obtained has the second material layer 413.
Is formed by a sputtering method, and a trace amount of a rare gas element is contained in the second material layer 413, so that the entire device can be made flexible.

In addition, since a reflective liquid crystal display device is considered in this embodiment, light emission can be obtained from the support 423 side.
For that purpose, the support body 423 needs to be transparent.

[Embodiment 3] In this embodiment, an apparatus for producing a light emitting device having an organic light emitting element is shown in FIG. The light emitting device shown in Example 1 can be manufactured by the device shown in this example.

FIG. 5 shows an apparatus for forming a light emitting layer (EL layer) of an organic light emitting element by a dry method of a low molecular weight organic compound.
This manufacturing apparatus mainly includes a transfer chamber for transferring a substrate, a transfer chamber for transferring, a film forming chamber for forming various thin films, and a sealing chamber for sealing. Each chamber is equipped with an exhaust device for achieving a required degree of vacuum or a device for generating a gas atmosphere of N ₂ or the like, and each chamber is connected with a gate valve or the like. The substrate transfer is performed by a transfer robot.

First, a substrate 501c (a pixel portion, a driving circuit portion, wirings, electrodes, a protective film, etc., which are necessary for manufacturing an organic light emitting device) is introduced into the delivery chamber 500 from the outside. . TFTs are typically used in the pixel portion and the driver circuit portion.

The substrate 501c introduced into the delivery room 500
Is transported into the transport chamber 501a by the transport robot 501b and further transported to the pretreatment chamber 502. Typically, the substrate 501c is subjected to pretreatment such as heating or O ₂ plasma treatment in the pretreatment chamber 502. This pretreatment aims to improve various characteristics of the organic light emitting device.

The substrate for which the pretreatment has been completed is transferred to the transfer chamber 504 via the delivery chamber 503. A transfer robot is also mounted in the transfer chamber 504, and plays a role of transferring a substrate to each room connected to the transfer chamber 504. A film forming chamber for forming an organic layer is connected to the transfer chamber 504. The film forming chambers 506R, 506G, and 506B for forming light emitting layers of R, G, and B colors in consideration of manufacturing a display device having a full-color organic light emitting element.
However, a film forming chamber 505 for forming a layer common to each color, that is, a carrier transport layer, a carrier injection layer, and the like is installed. A vacuum deposition method is generally used in these film forming chambers. In order to obtain full-color light emission, vapor deposition is performed by using a shadow mask for separate coating so that the light-emitting layers that emit R, G, and B colors are arranged in stripes, mosaics, or deltas. Good.

The substrate on which the organic layer has been formed is transferred to the delivery chamber 5
It is transported to the transfer chamber 508 via 07. Transport room 50
8 also has a transfer robot mounted thereon, and plays a role of transferring the substrate to each room connected to the transfer room 508.
A film forming chamber for the purpose of forming a back electrode and a protective film is connected to the transfer chamber 508. In the film forming chambers 509 and 510, a metal (for example, A
(LiLi alloy, MgAg alloy, etc.) is deposited. Deposition chamber 5
In 11, the transparent conductive film (for example, ITO or IZO) necessary for obtaining light emission from the upper surface of the substrate is generally formed by the sputtering method or the chemical vapor deposition (CVD) method.
film formation by the osition method. In the film forming chamber 512, a passivation film for protecting the surface (for example, SiN,
A SiOx film or the like) is generally formed by a sputtering method or a CVD method.

The substrate on which the film has been formed is conveyed to the transfer chamber 514 via the transfer chamber 513. A plurality of chambers necessary for sealing are connected to the transfer chamber 514. A transfer robot is also installed in the transfer chamber 514.
It plays a role of transporting the substrate or the sealing substrate to each room connected to 14.

First, it is necessary to prepare a substrate for sealing. The room for that is the sealed glass substrate preparation room 51.
5a and a sealed plastic substrate preparation chamber 515b.

Into the sealing glass substrate preparation chamber 515a, a counter glass for glass-sealing the produced organic light emitting element is introduced from the outside. If desired, a desiccant which protects the organic light emitting device from water can be introduced into the counter glass. For example, the sheet-shaped desiccant may be attached to the countersunk portion of the counter glass which has been previously countersunk with a double-sided tape or the like.

On the other hand, the sealed plastic substrate preparation chamber 515
In step b, preparation is made for sealing the produced organic light emitting device with plastic. Although a plastic (finished product) having a shape suitable for the purpose may be introduced from the outside, in this embodiment, the support (plastic in this embodiment) of the present invention is produced in the sealing glass substrate preparation chamber 515b. To do. For example, a support having a curvature and elasticity is made by using the material and method shown in FIG. That is, the molds 211a, 21
1b and thermosetting resin 212 are introduced from the outside, and molding processes such as heating, pressurizing, and cooling are performed. When the organic light emitting device is transferred onto plastic, the transfer member of the present invention may be prepared by the same method. These operations may be fully automated or may be partially manual with gloves installed.

The prepared sealing glass substrate or sealing plastic substrate is carried to the dispenser chamber 516, and an adhesive (not shown) for later bonding with the substrate is applied. In this embodiment, an ultraviolet curable adhesive is used as the adhesive. In addition, if necessary, a desiccant (not shown) for preventing the organic light emitting element from water is added to the sealing glass substrate preparation chamber 51.
It may be charged in the dispenser chamber 516 instead of at the time of introducing the glass substrate in 5a. For example, a sheet-shaped desiccant can be attached to the countersunk portion of counter glass which has been previously countersunk with a double-sided tape or the like.
This eliminates the need to handle the desiccant in the atmosphere. These operations may be fully automated or may be partially manual with gloves installed. Especially when the sealing plastic substrate has curvature and elasticity,
The adhesive may be applied in a bent state or may be applied in a straightened state.

The substrate on which the film has been formed and the sealing glass substrate or the sealing plastic substrate coated with the adhesive are carried to the sealing chamber 517 and bonded to each other. At the time of bonding, it is necessary to apply pressure using an appropriate jig (not shown). In the case of a sealed plastic substrate having curvature and elasticity, it may be attached in a straightened state. These operations may be fully automated or may be partially manual with gloves installed.

Next, the substrate and the sealing substrate bonded in the sealing chamber 517 are carried to the ultraviolet light irradiation chamber 518 and irradiated with ultraviolet rays for curing the adhesive.

The substrate and the sealing substrate bonded in the ultraviolet light irradiation chamber 518 may be taken out from the delivery chamber 519 to the outside.

However, when the device of the present invention is manufactured, as shown in FIGS. 1 (4) and 5 (2), two steps of substrate peeling and transfer member adhesion are further required. That is, the substrate and the sealing substrate (support) bonded by the ultraviolet irradiation in the ultraviolet light irradiation chamber 518 are once sealed in the plastic substrate preparation chamber 5
Return to 15b. The substrate is peeled off in the sealed plastic substrate preparation chamber 515b. In this embodiment, a method utilizing film stress between the metal layer or the nitride layer and the oxide layer is used as the peeling method. On the other hand, similar to the case of the support, the transfer body is sealed from the sealing plastic substrate preparation chamber 515b to the dispenser chamber 5
16 and carry the adhesive. The support from which the substrate has been peeled off and the transfer body to which the adhesive has been applied are carried to the sealing chamber 517 and attached to each other. After that, the ultraviolet light irradiation chamber 51
The display device is completed by carrying it to No. 8 and performing ultraviolet irradiation again. Finally, the finished product may be taken out of the delivery room 519 to the outside.

Further, this embodiment can be combined with the first embodiment.

[Embodiment 4] In this embodiment, an example in which a display having a curvature obtained by the present invention is mounted on a vehicle is shown. Although an automobile is used as a typical example of a vehicle here, the invention is not particularly limited, and the present invention is not limited to this.
It goes without saying that it can be applied to aircraft, trains, trains, etc.

FIG. 6 is a diagram showing the vicinity of the driver's seat of an automobile. The dashboard section is provided with a sound reproduction device, specifically, a car audio system and a car navigation system. The main body 2701 of the car audio is displayed on the display portion 270.
2. Includes operation switches 2703 and 2704. Display unit 2
By implementing the present invention in 702, a thin and lightweight car audio can be completed. Also,
By implementing the present invention in the display portion 2801 of the car navigation, a thin and lightweight car navigation can be completed.

Further, in the vicinity of the operation handle portion 2602,
A display unit 2603 is provided on the dashboard unit 2601 for digitally displaying an instrument such as a speedometer. By implementing the present invention in the display portion 2702, a thin and lightweight mechanical display device can be completed.

Further, the dashboard portion 26 having a curved surface
You may form the display part 2602 stuck to 01. By implementing the present invention in the display portion 2602, a thin and lightweight mechanical display device or image display device can be completed. The display portion 2602 is curved in the direction indicated by the arrow.

Further, the windshield 260 having a curved surface
The display portion 2600 attached to No. 4 may be formed.
When the present invention is applied to the display portion 2600, a transparent material may be used, and the present invention can complete a thin and lightweight mechanical display device or image display device. The display unit 2600 is curved in the direction indicated by the arrow. Although the windshield is used here, it can be provided on another window glass.

For example, the rear window 29 having a curved surface
You may form the display part 2902 stuck to 00. FIG. 7 is a diagram showing the vicinity of the back seat of the automobile. Note that FIG. 7 corresponds to FIG. 6, and since the operation handle portion is the same, the same reference numerals as those in FIG. 6 are used.

If the flexible display device of the present invention is attached to the rear window 2900 and a camera capable of photographing the rear is attached outside the vehicle and connected to each other, the driver can see the vehicle body 2906 as an obstacle. You can see places you can't. The display unit 2902 displays
It is curved in the direction indicated by the arrow.

Further, as shown in FIG. 7, in the case of the right steering wheel, there is a blind spot because there is a part of the vehicle body 2906 (the part between the window glasses) on the left rear, but the part between the window glasses is present. The driver can confirm the blind spot by attaching the display device (display unit 2901) of the present invention to the vehicle, attaching a camera capable of photographing the blind spot direction outside the vehicle, and connecting the cameras to each other. The display portion 2901 is curved in the direction indicated by the arrow.

A display portion 2905 may be provided on the sheet 2904. People sitting in the back seats watching TV,
You can see the car navigation display.

Although not shown here, the display of an image and the illumination in the vehicle are performed by using a vehicle ceiling as a base material and adhering a display device having an organic light emitting element having a shape matching the curved surface of the ceiling. be able to.

As described above, the curved surface display of the present invention can be easily mounted anywhere in the vehicle having the curved surface having the radius of curvature of 50 cm to 200 cm.

In this embodiment, a car audio system and car navigation system for vehicles are shown, but they may be used for other vehicle displays and stationary audio and navigation systems.

In addition, this embodiment is based on the first and second embodiments.
Can be combined with.

[Embodiment 5] In this embodiment, an element included in the layer to be peeled and its peripheral structure are shown. Here, the cross-sectional structure of one pixel in the active matrix display device, particularly the connection between the light emitting element and the TFT and the shape of the partition wall disposed between the pixels will be described.

In FIG. 8A, 40 is a substrate, 41 is a partition (also called a bank), 42 is an insulating film, 43 is a first electrode (anode), 44 is a layer containing an organic compound, and 45 is a second layer. The electrode (cathode), 46 is a TFT.

In the TFT 46, 46a is a channel forming region, 46b and 46c are source regions or drain regions, 46d is a gate electrode, and 46e and 46f are source electrodes or drain electrodes. Top gate type T here
Although FT is shown, it is not particularly limited, and it is an inverted stagger type TF.
It may be T or a forward stagger type TFT. Note that 46f is an electrode that connects with the TFT 46 by partially overlapping and overlapping the first electrode 43.

Further, FIG. 8B shows a sectional structure which is partially different from that of FIG.

In FIG. 8B, the way in which the first electrode and the electrode overlap is different from the structure in FIG. 8A.
After patterning the electrodes, the electrodes are formed so as to partially overlap with each other, thereby connecting to the TFTs.

Further, FIG. 8C shows a sectional structure which is partially different from that of FIG.

In FIG. 8C, another layer of interlayer insulating film is provided, and the first electrode is connected to the electrode of the TFT through the contact hole.

The sectional shape of the partition wall 41 is shown in FIG.
It may be tapered as shown in FIG. It is obtained by exposing a resist using a photolithography method and then etching a non-photosensitive organic resin or an inorganic insulating film.

If a positive photosensitive organic resin is used, the shape as shown in FIG. 8E and the shape having a curved surface at the upper end can be obtained.

If a negative photosensitive resin is used, the shape shown in FIG. 8 (F) and the shape having curved surfaces at the upper end and the lower end can be obtained.

In addition, this embodiment is based on the first embodiment, the third embodiment,
Alternatively, it can be combined with any of the fourth embodiment.

[Embodiment 6] In this embodiment, an example of manufacturing a passive matrix light emitting device (also referred to as a simple matrix light emitting device) will be described.

First, a plurality of first stripes are formed on the substrate.
The wiring is formed of a material such as ITO (a material that serves as an anode). Then, a partition wall made of resist or photosensitive resin is formed so as to surround a region to be a light emitting region. Next, a layer containing an organic compound is formed in a region surrounded by the partition by an evaporation method or an inkjet method. In the case of full-color display, a material is appropriately selected and a layer containing an organic compound is formed. Next, a plurality of stripe-shaped second wirings are formed of a metal material (a material serving as a cathode) such as Al or an Al alloy so as to intersect with the plurality of first wirings made of ITO on the partition and the layer containing the organic compound. To do. Through the above steps, a layer to be peeled including a light-emitting element in which a layer containing an organic compound is used as a light-emitting layer can be formed.

Next, a sealing substrate serving as a support is attached with a sealing material, or a protective film is provided on the second wiring and sealing is performed.

Next, the substrate is peeled off, and the layer to be peeled including the light emitting element is attached to a transfer body (for example, a glass substrate having a curved surface). The method for peeling the substrate is not particularly limited,
The method shown in the embodiment mode or the first embodiment may be used.

The present invention can be applied to not only full-color display devices but also monochromatic light-emitting devices such as surface light sources and lighting devices.

Further, this embodiment can be freely combined with Embodiment 1, Embodiment 3, Embodiment 4, or Embodiment 5.

[0123]

According to the present invention, a display is provided in a limited space, for example, in a driver's seat of a vehicle represented by an automobile or an aircraft, which has various curved surfaces (window, ceiling, door, dashboard, etc.). Can be installed.

[Brief description of drawings]

FIG. 1 is a process diagram showing the present invention (embodiment).

FIG. 2 is a diagram showing an aspect of a plastic molding method (embodiment).

FIG. 3 is a process diagram of manufacturing a semiconductor device having an organic light emitting element (Example 1).

4A to 4C are process diagrams of manufacturing a semiconductor device having a liquid crystal (Example 2).

FIG. 5 is an apparatus diagram for manufacturing a semiconductor device having an organic light emitting element using the present invention (Example 3).

FIG. 6 is a diagram showing the inside of the vehicle and the periphery of the windshield (Example 4).

FIG. 7 is a diagram showing the inside of the vehicle and the vicinity of the rear window (Example 4).

FIG. 8 is a diagram showing a cross section around a TFT and a light emitting element included in a layer to be peeled (Example 5).

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 29/786 H05B 33/04 H05B 33/00 33/10 33/04 33/14 A 33/10 H01L 29 / 78 627D 33/14 626C (72) Inventor Junya Maruyama 398 Hase, Atsugi City, Kanagawa Prefecture F-Term (Reference) 2H090 JA02 JB03 JC04 3K007 AB18 BA00 BA06 BA07 BB01 BB02 CA06 CB01 DB03 FA01 FA02 5C094 AA42 AA46 BA03 BA27 BA43 DA05 DA06 DA12 DA13 EA04 EB02 FA02 HA08 5F110 AA30 BB02 CC02 CC06 CC08 DD01 DD14 DD17 DD21 DD25 NN03 NN24 NN27 NN71 NN72 NN73 QQ16 QQ30 5G435 AA17 BB05 LL17 KK

Claims (9)

[Claims] 1. A first step of forming a support and a transfer body having a curvature, a second step of forming a layer to be peeled including an element on a substrate having a rigidity higher than that of the support, and the element. A third step of adhering the support having a curvature to the layer to be peeled including the substrate and the substrate in a state in which an external force is applied so as to match the surface shapes of the layer to be peeled including the element and the substrate, A fourth step of peeling the layer to be peeled containing the element, to which the support is bonded, from the substrate by a physical means; and bonding the transfer body to the layer to be peeled containing the element, thereby forming the support and the support. A fifth step of sandwiching a layer to be peeled containing the element with a transfer body, and the support to which the layer to be peeled containing the element is adhered is the first step at the end of the fourth step. A semiconductor characterized by restoring to the shape it had at the end of the process A method for manufacturing a location. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the element includes one or more kinds selected from a thin film transistor and an organic light emitting element. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the support has a curvature and elasticity when the first step is completed. 4. The radius of curvature of the support at the end of the first step is Ri, the radius of curvature at the end of the third step is Rm, and the radius of curvature at the end of the fourth step. Is Rf, and Ri ≦ Rf ≦ Rm. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the support is a sealing material, and the element is an organic light emitting element. 6. The liquid crystal material according to claim 1, wherein the support is a counter substrate, the element has a pixel electrode, and the liquid crystal material is provided between the pixel electrode and the counter substrate. A method for manufacturing a semiconductor device, comprising: 7. The method of manufacturing a semiconductor device according to claim 1, wherein the transfer body has a curvature when the first step is completed. 8. The method of manufacturing a semiconductor device according to claim 1, wherein at least one of the support and the transfer body is transparent. 9. The radius of curvature of the support and the transfer body according to claim 1, wherein the radius of curvature is 50 cm to 200.
A method for manufacturing a semiconductor device, which is in the range of cm.