JP4495939B2 - Thin film device device manufacturing method, active matrix substrate manufacturing method, and electro-optical device manufacturing method - Google Patents

Description

The present invention relates to a method of manufacturing a thin film device device in which an organic functional element such as an organic TFT is formed on a substrate and then transferred from the substrate to another substrate, a thin film device device obtained by the method, and the thin film device device. it is to about manufacturing method in the method for manufacturing an active matrix substrate used.

  It is known that thin film devices are used in various electro-optical devices such as liquid crystal display devices and electrophoretic display devices, and semiconductor processes are used for manufacturing thin film devices. For example, in an active matrix liquid crystal display device using liquid crystal as an electro-optic material, a semiconductor process is used when a thin film transistor (hereinafter referred to as TFT) is manufactured as a switching element on an active matrix substrate. Since this process includes a process accompanied by high-temperature treatment, it is necessary to use a substrate having a material excellent in heat resistance, that is, a substrate having a high softening point and a high melting point.

Therefore, at present, quartz glass is used as a substrate that can withstand a temperature of about 1000 ° C., and heat-resistant glass is used as a substrate that can withstand a temperature of around 500 ° C.
As described above, a substrate on which a thin film device such as a TFT is mounted must be able to withstand temperature conditions and the like when manufacturing the thin film device.

  However, after completion of a substrate on which a thin film device such as a TFT is mounted, the quartz glass or heat resistant glass may not be preferable. For example, when a quartz substrate, a heat-resistant glass substrate, or the like is used so that it can withstand a manufacturing process involving high-temperature processing, these substrates are very expensive, leading to an increase in the price of products such as display devices. In addition to being as cheap as possible, liquid crystal display devices used in portable electronic devices such as palmtop computers and mobile phones are light and can withstand some deformation, and are difficult to break even if dropped. However, the quartz substrate and the glass substrate are heavy, weak against deformation, and easily broken by dropping. Therefore, there is a problem that the substrate used in the conventional thin film device apparatus cannot cope with both of the restrictions resulting from the manufacturing conditions and the characteristics required for the product.

  On the other hand, in recent years, organic TFTs and organic EL elements have been studied as organic thin film electronic devices, and trial production of organic TFT displays driven by organic TFT active matrix has been attempted. Organic electronic devices are characterized by the fact that they do not require expensive manufacturing facilities such as those found in the production of polycrystalline silicon TFTs, and can provide inexpensive devices. It is considered suitable for display devices used in electronic equipment.

  When these organic TFTs are formed on a base material that is a plastic sheet, since the dimensional stability of the base material is poor, it is very difficult to form an active element directly on the base material. [Patent Document 1] discloses that an active matrix layer formed in advance on a substrate having excellent heat resistance such as glass is transferred onto a plastic sheet substrate. This [Patent Document 1] requires a complicated process such as using a metal plating for the release layer and providing a transparent electrical insulating layer between the active matrix layer, and a solvent-type pressure sensitive adhesive as an adhesive. As a result, stress problems arise. In [Patent Document 2], in order to protect the active matrix layer from an external force at the time of transfer, a complicated difference in steps such as disposing an inorganic buffer layer or additionally forming a slit is caused.

  In view of this, an important technique of the transfer method is in the peeling process. In [Patent Document 3], a technique relating to a decrease in adhesion force due to a phase change phenomenon due to laser irradiation of amorphous silicon and a decrease in adhesion force due to irradiation is disclosed in [Patent Document 3]. In [Patent Document 4] and [Patent Document 5], a technique relating to removal of physical and chemical substrates is disclosed, and in addition, from mechanical peeling accompanied by stress and generated stress Techniques relating to element protection methods are disclosed, and techniques relating to the peeling process of the transfer method can be broadly classified.

  In Japanese Patent Application No. 8-225643, after a polycrystalline silicon TFT or the like is formed on a first substrate under substantially the same conditions as a conventional process, the thin film device is peeled off from the first substrate. A technique for transferring to a second substrate has been proposed. Here, a separation layer is formed between the first base material and the thin film device, and the thin film device is peeled from the first base material by irradiating the separation layer with, for example, energy light. The thin film device is transferred to the second substrate side.

JP-A-8-62591 JP 2001-356370 A JP-A-8-152512 JP-A-10-189924 Japanese Patent Laid-Open No. 11-31828

  However, with the conventional peeling method and transfer method, there is a problem that the peeling phenomenon in the separation layer does not occur properly, and there is a limitation on the substrate size, and in particular, it cannot be developed to a large area element that is a feature of organic electronic devices. There was a problem that.

The present invention relates to a method of manufacturing a thin film device device in which an organic functional element such as an organic TFT is formed on a substrate and then transferred from the substrate to another substrate without damage, and the thin film device device obtained by this method , for the purpose of provision of the method of manufacturing the active matrix substrate using the method of manufacturing a thin film device unit.

To achieve the above object, the invention described in claim 1 includes a first separation membrane forming step of forming a first separation membrane on a first substrate, and an organic functional element on the first separation membrane. An organic functional element forming step for forming a second base material, a second base material integrating step for integrating a second base material with the organic functional element, and a first base material are separated from the organic functional element. A first base material separation step, and in the first separation membrane formation step, the adhesion strength between the first base material and the first separation membrane is partially different. Before the base material separation step , the second base material integration step and the first base material separation step are performed to remove a portion having strong adhesion between the first base material and the first separation membrane. in the method of manufacturing a thin film device unit having a removal step performed or between the organic functional device forming step and the second base material integration step of

  According to a second aspect of the present invention, in the method of manufacturing the thin film device according to the first aspect, in the first separation membrane forming step, the surfactant is partially disposed on the first base material, It is characterized in that the adhesive force between one substrate and the first separation membrane is partially different.

  According to a third aspect of the present invention, in the method for manufacturing a thin film device device according to the second aspect, in the first separation membrane forming step, after the surfactant is disposed on the entire surface of the first base material, the predetermined position is set. By removing the surfactant, the surfactant is partially disposed on the first substrate, and the adhesion between the first substrate and the first separation membrane is partially different, To do.

  According to a fourth aspect of the present invention, in the method for manufacturing a thin film device according to the second aspect, in the first separation film forming step, the surfactant is disposed at a predetermined position of the first base material by a printing method. The surfactant is partially disposed on the first substrate, and the adhesion between the first substrate and the first separation membrane is partially varied.

  According to a fifth aspect of the present invention, in the method for manufacturing a thin film device device according to any one of the first to fourth aspects, the first substrate and the first separation membrane are adhered by dicing in the removing step. It is characterized by removing strong parts.

  According to a sixth aspect of the present invention, in the method of manufacturing a thin film device device according to any one of the first to fourth aspects, in the removing step, the first substrate and the first separation membrane are separated by laser ablation. It is characterized by removing a portion having a strong adhesion.

According to a seventh aspect of the present invention, in the method for manufacturing a thin film device device according to any one of the first to sixth aspects, a polyparaxylylene film is used as the first separation film.

The invention according to claim 8 is characterized in that in the method for manufacturing a thin film device device according to any one of claims 1 to 7, a flexible sheet is used as the second substrate.

According to a ninth aspect of the present invention, in the method of manufacturing a thin film device device according to any one of the first to eighth aspects, after the first base material separation step, On the opposite side of the base material, there is a third base material integration step for integrating the third base material, and a second base material separation step for separating the second base material from the organic functional element. It is characterized by that.

According to a tenth aspect of the present invention, in the method for manufacturing a thin film device device according to the ninth aspect, a flexible sheet is used as the third base material.

According to an eleventh aspect of the present invention, in the method for manufacturing a thin film device device according to any one of the first to tenth aspects, the organic functional element includes an organic TFT element.

A twelfth aspect of the present invention is the thin film device device manufacturing method according to any one of the first to tenth aspects, wherein the organic functional element includes an organic EL element that emits light in response to an image signal. Alternatively, the display device includes an organic EL element that emits light with respect to an image signal and an organic TFT element that performs switching on the organic EL element.

According to a thirteenth aspect of the present invention, there is provided an active matrix for manufacturing an active matrix substrate by using the method for manufacturing a thin film device device according to any one of the first to twelfth aspects and forming the organic functional elements in a matrix. It is in the manufacturing method of a board | substrate.

According to a fourteenth aspect of the present invention, there is provided an electro-optical device manufacturing method for manufacturing an electro-optical device using the active matrix substrate manufacturing method according to the thirteenth aspect .

The present invention includes a first separation film forming step of forming a first separation film on a first substrate, an organic functional element formation step of forming an organic functional element on the first separation film, A second base material integration step of integrating the second base material with the organic functional element; and a first base material separation step of separating the first base material from the organic functional element. In the first separation membrane forming step, the adhesion between the first base material and the first separation membrane is partially different, and before the first base material separation step, Removing a portion having a strong adhesion between the base material and the first separation membrane, between the second base material integration step and the first base material separation step, or the organic functional element formation step. since the method of manufacturing a thin film device unit having a removal step performed between the second substrate integration step, the organic functional device on the first substrate After form, the second substrate from the first substrate, it is possible to satisfactorily transferred without damaging, it is possible to large area without being restricted to the size of the substrate, the removing step When performing between the second base material integration step and the first base material separation step, the removal step is performed immediately before the first base material separation step, thereby removing the first base material. Can be prevented from being inadvertently performed, and when the removal step is performed between the organic functional element formation step and the second base material integration step, there is an area for integrating the second base material. Provided is a method for manufacturing a thin film device device that can reduce the consumption of the second base material and can reduce the consumption when the adhesive is used to integrate the second base material. can do.

  In the first separation membrane forming step, by partially disposing a surfactant on the first base material, the adhesion between the first base material and the first separation membrane is made partially different. In this case, the adhesion between the first substrate and the first separation membrane can be easily made partially different by using a widely used surfactant. After being formed on the substrate, it can be transferred well from the first substrate to the second substrate without being damaged, and the area can be increased without being restricted by the size of the substrate. A method for manufacturing a thin film device device can be provided.

  In the first separation membrane forming step, after the surfactant is disposed on the entire surface of the first substrate, the surfactant is partially removed from the first substrate by removing the surfactant at a predetermined position. If it arrange | positions and it is supposed that the adhesive force of a 1st base material and a 1st separation membrane will differ partially, the surfactant of 1st base material is used by a simple method using widely used surfactant. A surface active agent can be applied to the entire surface, and then the applied surface active agent is partially removed so that the adhesion between the first base material and the first separation membrane can be easily changed partially. Therefore, after forming the organic functional element on the first base material, the first base material can be successfully transferred to the second base material without being damaged, and the size of the base material is restricted. The manufacturing method of the thin film device apparatus which can be enlarged without receiving it can be provided.

  In the first separation membrane forming step, the surfactant is partially arranged on the first substrate by arranging the surfactant at a predetermined position of the first substrate by a printing method, and the first substrate If the adhesive force between the material and the first separation membrane is partially different, the first base material can be obtained by a simple method such as a widely used printing method using a widely used surfactant. The surface active agent can be partially applied to the desired position, and the adhesion between the first base material and the first separation membrane can be easily changed partially. Can be successfully transferred from the first base material to the second base material without being damaged, and the area can be increased without being restricted by the size of the base material. The manufacturing method of the thin film device apparatus which can be provided can be provided.

  In the removing step, if a portion having a strong adhesion between the first base material and the first separation membrane is removed by dicing, a highly versatile dicing is used to mechanically remove the portion having a strong adhesion. Since the organic functional element is formed on the first base material, it can be transferred from the first base material to the second base material without being damaged. It is possible to provide a method for manufacturing a thin film device device that can be enlarged without being restricted by size.

  In the removing step, if the portion with strong adhesion between the first base material and the first separation membrane is removed by laser ablation, laser ablation with high versatility is used, and the portion with strong adhesion is machined. Therefore, after the organic functional element is formed on the first substrate, it can be satisfactorily transferred from the first substrate to the second substrate without damage. It is possible to provide a method of manufacturing a thin film device apparatus that can be enlarged without being restricted by the size of the material.

  If a polyparaxylylene membrane is used as the first separation membrane, it has good releasability, and after the organic functional element is formed on the first base material, the first base material to the second base material are used. It is possible to provide a method of manufacturing a thin film device that can be transferred to a substrate of the substrate without damage and is excellent in increasing the area without being restricted by the size of the substrate.

  If a flexible sheet is used as the second substrate, the organic functional element is formed on the first substrate and then more reliably damaged from the first substrate to the second substrate. Thus, it is possible to provide a method for manufacturing a thin film device device that can be transferred satisfactorily while being prevented, and is further excellent in increasing the area without being restricted by the size of the substrate.

  After the first base material separation step, a third base material integration step of integrating the third base material on the side opposite to the second base material of the organic functional element, and a second base And a second base material separating step for separating the material from the organic functional element, after the organic functional element is formed on the first base material, the second base material is separated from the first base material. It is possible to transfer well to the base material without damage, and furthermore, it is possible to transfer well from the second base material to the third base material without damage, which limits the size of the base material. A thin film that can increase the area without being received, and can have the laminated structure of the organic functional element in the same state as the state formed on the first substrate when transferred to the third substrate. A method for manufacturing a device apparatus can be provided.

  If a flexible sheet is used as the third base material, the organic functional element can be transferred well from the second base material to the third base material, more reliably preventing damage. In addition, it is possible to provide a method for manufacturing a thin film device that is more excellent in increasing the area without being restricted by the size of the substrate.

  If the organic functional element includes an organic TFT element, it is possible to provide a method for manufacturing a thin film device device that is excellent in increasing the area and integration without being restricted by the size of the substrate. it can.

  A display in which the organic functional element has an organic EL element that emits light in response to an image signal, or a display that has an organic EL element that emits light in response to an image signal and an organic TFT element that performs switching on the organic EL element If it is provided, the manufacturing method of the thin film device apparatus which has a display excellent in enlargement and integration without being restrict | limited by the size of a base material can be provided.

The present invention provides a method for manufacturing an active matrix substrate, which uses the method for manufacturing a thin film device device according to any one of claims 1 to 12 to form an active matrix substrate by forming the organic functional elements in a matrix. Therefore, after forming the organic functional element on the base material using the method of manufacturing the thin film device device having the above-described effects, it can be transferred well from one base material to another base material without being damaged. Therefore, it is possible to provide a method for manufacturing an active matrix substrate that can be enlarged without being limited by the size of the base material.

The present invention resides in an electro-optical device manufacturing method for manufacturing an electro-optical device using the active matrix substrate manufacturing method according to claim 13. After forming the conductive element on the base material, it can be transferred well from one base material to another base material without being damaged, and the area can be increased without being restricted by the size of the base material. A method for manufacturing an electro-optical device can be provided.

[First Embodiment]
In S1 to S5 of FIG. 1, as a method of manufacturing the thin film device according to the first embodiment of the present invention, an organic functional element is formed on a substrate, and then the organic functional element is transferred to another substrate. The first process to the fifth process are shown, and FIGS. 2 to 7 show process cross-sectional views for explaining the process.

(First step)
The thin film device device manufacturing method of this embodiment has a first separation film forming step as a first step, as indicated by S1 in FIG. In this step, as shown in FIG. 2, a first separation layer 120 as a first separation membrane is formed on the first substrate 100.

The material of the first substrate 100 may be any material as long as it matches the purpose of manufacturing the organic electronic device, that is, any material with little dimensional change. Specifically, in this embodiment, an Si wafer is used, but a glass substrate, a ceramic substrate, or the like may be used.
The first separation layer 120 needs to have heat resistance enough to form an active matrix layer including an organic TFT, and resistance to an etching process during patterning when forming the active matrix layer. Further, the first separation layer 120 can peel the first substrate 100 without damaging other portions when performing a first substrate separation step (FIG. 1 (S5)) described later. For example, it is necessary to be able to control the strength to 10 g / cm or less in a 90 ° peel test.
The thickness of the first separation layer 120 is preferably about 1 to 20 μm, but is not limited thereto.

  The first separation layer 120 is preferably an organic film. Such an organic film can be formed by a chemical vapor deposition method using a gas containing an organic material. As such an organic material, a polyparaxylylene material, a so-called parylene material can be used. It is particularly effective from the viewpoint of forming a uniform large-area film that the first separation layer 120 is a polyparaxylylene film using a parylene material, a so-called parylene film.

  The parylene film is a coating film formed by a vapor phase synthesis method made of polyparaxylylene resin developed by Union Carbide Chemicals & Plastics, Inc. of the United States. This coating film is formed by vaporizing and thermally decomposing diparaxylylene solid dimer as a raw material, and causing the stable diradical paraxylylene monomer generated at this time to cause simultaneous reaction of adsorption and polymerization on the substrate.

  This coating film can be precisely coated, which is impossible with conventional liquid coating or powder coating, and can be coated at room temperature, regardless of the shape and material of the adherend during coating. Due to its many excellent properties, it is known as an optimal conformal coating film, from the coating of super-precision parts to the coating of general-purpose products.

Specifically, application examples can be seen in insulating film coating of hybrid ICs, prevention of dust powder generation in disk drive parts, lubricating films for stepping motors, and corrosion prevention films for biomaterials.
Note that in the case where an organic film is used for the first separation layer 120, the film can be formed using not only a polyparaxylylene material but also a fluorinated polymer or cycloten.

  In the first separation membrane forming step, only the peripheral part has good adhesion, and the other parts have poor adhesion, that is, the first separation layer 120 and the first base material 100 interface part. Thus, the first separation layer 120 is formed so as to provide portions having different adhesion forces. Therefore, in the first separation membrane forming step, the adhesion between the first base material 100 and the first separation layer 120 is partially different. In FIG. 2, the thick line part shown with the code | symbol 10 has shown the part with favorable adhesive force.

  Specifically, by partially disposing a surfactant on the first base material 100, the adhesive strength and adhesiveness between the first base material 100 and the first separation layer 120 are partially different. . In this method, a surfactant is partially disposed at a predetermined position of the first base material 100, in this embodiment, other than the peripheral portion, by a printing method using a known printing technique. As another method, a surfactant is applied and disposed on the entire surface of the first substrate 100 by dipping, and irradiated with ultraviolet rays having a wavelength of 254 nm or less using a constant-pressure mercury lamp, so that a peripheral position in this embodiment is used. Some surfactants are removed, and the surfactant is partially disposed in a portion other than the peripheral portion. Thus, after performing the surface modification of the 1st substrate 100, the 1st separated layer 120 is formed.

(Second step)
The thin film device device manufacturing method of the present embodiment includes an organic functional element forming step as a second step after the first separation film forming step which is the first step, as indicated by S2 in FIG. ing. In this step, as shown in FIG. 3, a thin film device layer 140 having an organic functional element is formed on the first separation layer 120.

  The thin film device layer 140 can include various thin film devices as organic functional elements. In this embodiment, the thin film device layer 140 includes the organic TFT element 20 as organic functionality, as shown in a partially enlarged view in FIG. The organic TFT element 20 has an inverted stagger structure, and includes an organic semiconductor layer 144, a gate insulating film 148, a gate electrode 150, and a source / drain electrode 152. The manufacturing method and specific configuration of the organic TFT element 20 are left to each example described later. The organic TFT element may be formed by disposing an intermediate layer on the lowermost surface of the thin film device layer 140.

  In the example shown in FIG. 3, the thin film device layer 140 is a layer including the organic TFT 20 as a thin film device, but the thin film device formed on the thin film device layer 140 is not limited to the organic TFT element 20 but is a device to be manufactured. Depending on the type, for example, organic thin film diodes, photosensors composed of PIN junctions of organic electronic materials, photoelectric conversion elements such as solar cells, organic resistance elements, other organic thin film semiconductor devices, various organic electrodes, switching elements, memories, etc. Can be provided in various combinations. Any of these organic thin film devices has a large area and is integrated to improve the function.

(Third step)
The thin film device device manufacturing method of the present embodiment includes a second base material integration step as a third step following the organic functional element formation step as the second step, as indicated by S3 in FIG. is doing. In this step, as shown in FIG. 5, the second substrate 180 is integrated with the thin film device layer 140.

The second substrate 180 is bonded to and integrated with the thin film device layer 140 on the side opposite to the first substrate 100 via the second separation membrane 160.
Preferable examples of the adhesive constituting the adhesive layer 160 include a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. Can be mentioned. The composition of the adhesive may be any, for example, epoxy, acrylate, or silicone.

A water-soluble adhesive can also be used as the adhesive layer 160. Examples of the polyvinyl alcohol resin and this type of water-soluble adhesive include Chemi-Seal U-451D (trade name) manufactured by Chemtech Co., Ltd. and Three Bond 3046 (trade name) manufactured by Three Bond Co., Ltd.
Such an adhesive layer 160 is formed by, for example, a coating method.

  When a curable adhesive is used for the adhesive layer 160, for example, after applying the adhesive on the thin film device layer 140 and bonding the second substrate 180 thereon, a curing method according to the characteristics of the adhesive Thus, the adhesive can be cured to adhere and fix the thin film device layer 140 and the second substrate 180.

  In particular, when a photocurable adhesive is used for the adhesive layer 160, for example, an adhesive is applied onto the thin film device layer 140, and the second base material 180 is bonded thereon, and then the first base material is used. When both the 100 and the second base material 180 are light transmissive, the adhesive is cured by irradiating light to the adhesive from either one of the bases or both bases to form a thin film When the device layer 140 and the second base material 180 can be bonded and fixed, and only one of the first base material 100 and the second base material 180 has light transmittance, The thin film device layer 140 and the second base material 180 can be bonded and fixed by curing the adhesive by irradiating the adhesive with light from the side of the base material having light permeability. As the adhesive used here, an ultraviolet curable adhesive that does not easily affect the thin film device layer 140 is desirable.

  The adhesive layer 160 is not formed on the thin film device layer 140 side, but is formed on the second base material 180 side, and the second base material 180 is bonded to the thin film device layer 140 via the adhesive layer 160. May be. When the second substrate 180 itself has an adhesive function, the formation of the adhesive layer 160 may be omitted.

  The second substrate 180 may be inferior in characteristics such as heat resistance and corrosion resistance as compared to the first substrate 100. After the thin film device layer 140 is formed on the first base material 100 side, the thin film device layer 140 is transferred to the second base material 180. This is because no characteristics are required.

The mechanical properties of the second base material 180 are required to have a certain degree of rigidity and strength depending on the type of equipment to be manufactured. However, the second base material 180 may have flexibility and elasticity. Can be a sheet.
As the second base material 180, an optimal one is selected and used depending on the type of equipment to be manufactured, such as an inexpensive glass substrate having a very low melting point, a sheet-like thin plastic substrate, or a considerably thick plastic substrate. It is done. Moreover, the 2nd base material 180 may be curved instead of a flat plate.

  When a plastic substrate is used as the second base material 180, the synthetic resin constituting this may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide , Polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH), Polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), precyclohexane terephthalate (PCT), polyether, polyether ketone (PEK), polyether ether ketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin , Polyvinyl chloride, polyurethane, fluoro rubber, chlorinated polyethylene, and other thermoplastic elastomers, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyesters, silicone resins, polyurethanes, etc. Main copolymers, blends, polymer alloys and the like can be mentioned, and one or a laminate obtained by laminating two or more of these can be used.

  When a plastic substrate is used as the second base material 180, the large second base material 180 can be formed integrally. Further, if the second base material 180 is a plastic substrate, it can be easily manufactured even if it has a complicated shape such as a curved surface or an uneven surface. Further, if the second base material 180 is a plastic substrate, there is an advantage that material costs and manufacturing costs can be reduced. Therefore, if the second substrate 180 is a plastic substrate, it is advantageous when manufacturing a large and inexpensive device such as a liquid crystal display device or an organic EL display device.

  In this embodiment, the second base material 180 is an active matrix liquid crystal display device or an active device of a display device such as an electrophoretic display panel using the electrophoretic effect of particles using a change in reflectivity by applying an electric field. As in the case where the matrix substrate is configured as a thin film device device, the device itself forms the base of the device independently, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May constitute a part of.

(Fourth process)
The thin film device device manufacturing method of the present embodiment has a removal step as a fourth step following the second base material integration step, which is the third step, as indicated by S4 in FIG. In this step, the end portion of the laminate shown in FIG. 5 is cut to remove the portion 10 with good adhesion between the first base material 100 and the first separation layer 120.

  The removal of the portion 10 can be performed by mechanical removal by dicing by a processing machine used for cutting a silicon wafer provided with diamond teeth or laser ablation for evaporating and removing a desired portion. Can be properly used depending on the characteristics, but in any case, there is an advantage that versatility is high.

  In addition, this process is performed before the 1st base material separation process which is the 5th process described below, and in this form, this process is made into the above-mentioned 3rd process as a 4th process. This is performed between the second base material integration step, which is a step, and the first base material separation step, which is the fifth step described below. This step is an organic function which is the second step described above. It can also be performed between the conductive element forming step and the second base material integration step which is the third step described above. In this case, this step becomes the third step, and the second base material integration step is performed. The conversion step is the fourth step.

(Fifth step)
The thin film device device manufacturing method of the present embodiment includes a first base material separation step as a fifth step after the removal step, which is the fourth step, as indicated by S5 in FIG. In this step, as shown in FIG. 6, the first substrate 100 is separated from the thin film device layer 140.

  The separation of the first base material 100 from the thin film device layer 140 is performed by peeling the first substrate 100 from the interface of the first separation layer 120. By the removing step, the portion 10 having good adhesion between the first base material 100 and the first separation layer 120 has already been removed, and the adhesion strength between the first base material 100 and the first separation layer 120 is poor. Only the part remains.

Therefore, when a force is applied so as to peel off the first base material 100, peeling is easily performed between the interface of the first base material 100 and the first separation layer 120 as shown by an arrow A in FIG. As a result, the first substrate 100 can be easily peeled from the first separation layer 120, thereby separating the first substrate 100 from the thin film device layer 140. As a result, the thin film device layer 140 is transferred to the second substrate 180.
The manufacturing cost can be reduced by reusing the peeled first base material 100 and then recycling it to manufacture a new thin film device.

  Through the above steps, the transfer of the thin film device layer 140 to the second base material 180 is completed, and the thin film device layer 140 is transferred onto the second base material 180. The thin film device apparatus 1 shown in FIG. Is manufactured. In addition, what was shown in FIG. 7 itself is not used as a thin film device apparatus, but what mounted the 2nd base material 180 in which the thin film device layer 140 was formed on a desired material is good also as a thin film device apparatus.

  Thus, in the manufacturing method of the thin film device device 1 of the present embodiment, the object to be transferred, that is, the thin film device layer 140 itself that is the object to be peeled, is not directly peeled off from another object, but the first separation. The thin film device layer 140 and the first base material 100 are peeled by causing peeling at the interface of the layer 120 on the first base material 100 side. For this reason, the 1st base material 100 can be peeled off easily and reliably from the thin film device layer 140 side. Therefore, there is no damage to the thin film device layer 140 due to the peeling operation, and the highly reliable thin film device apparatus 1 is manufactured.

[Second Embodiment]
In S1 to S7 in FIG. 1, as a method of manufacturing the thin film device device of the second embodiment according to the present invention, after forming an organic functional element on a substrate, the organic functional element is transferred to another substrate. Furthermore, the first to seventh steps from the transfer of the organic functional element to another substrate are shown, and FIGS. 8 to 10 show process cross-sectional views for explaining the steps. ing.

  Since this embodiment is the same as the steps described in the first embodiment from the first step to the fifth step, description thereof is omitted. This embodiment has a sixth step and a seventh step for transferring the thin film device layer 140 from the second base material 180 to the third base material again after the fifth step. Since there is, these 6th process and 7th process are demonstrated.

(Sixth step)
As shown by S6 in FIG. 1, the manufacturing method of the thin film device of the present embodiment includes a third base material integration step as a sixth step after the first base material separation step which is the fifth step. Have. In this step, as shown in FIG. 8, the third substrate 200 is integrated with the thin film device layer 140 on the side opposite to the second substrate 180, that is, on the side where the first substrate 100 is located. Turn into.

  That is, after transferring the thin film device layer 140 to the second substrate 180 by the first to fifth steps, the thin film device layer 140 on the opposite side of the thin film device layer 140 from the second substrate 180. The third substrate 200 is integrated with the lower surface of the substrate. Therefore, the adhesive layer 190 is applied to the surface of the first separation layer 120 that forms the lower surface of the thin film device layer 140, and the third substrate 200 is adhered via the adhesive layer 190.

Suitable examples of the adhesive that constitutes the adhesive layer 190 include various kinds of adhesives such as a reaction curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. A curable adhesive may be mentioned. As the composition of the adhesive, for example, any epoxy type, acrylate type, silicone type, or the like that satisfies the required conditions may be used.
Such an adhesive layer 190 is formed by, for example, a coating method.

  When a curable adhesive is used for the adhesive layer 190, for example, a curable adhesive is applied to the lower surface of the thin film device layer 140, that is, the surface of the first separation layer 120, and the third substrate is applied to the curable adhesive. After bonding 200, the thin film device layer 140 and the third substrate 200 can be bonded and fixed by curing the curable adhesive by a curing method according to the characteristics of the curable adhesive.

  In particular, when a photocurable adhesive is used for the adhesive layer 190, the third base 200 is preferably light transmissive, and when the third base 200 is light transmissive, this back side That is, light is irradiated from the side of the third substrate 200 opposite to the side where the thin film device layer 140 is present. As the adhesive used here, an ultraviolet curing type adhesive that does not easily affect the thin film device layer 140 is desirable, and when such an adhesive is used, the second substrate 180 is light transmissive. The light may be irradiated from the second substrate 180 side, or the light may be irradiated from both the second substrate 180 side and the third substrate 200 side.

That is, when both the second base material 180 and the third base material 200 are light transmissive, the adhesive is irradiated with light from either the base material side or both base material sides. The thin film device layer 140 and the third substrate 200 can be bonded and fixed by curing the adhesive, and only one of the second substrate 180 and the third substrate 200 is light transmissive. The thin film device layer 140 and the third substrate 200 are bonded and fixed by irradiating the adhesive with light from the side of the substrate having the light transmission property to cure the adhesive. Can do.
Note that the adhesive layer 190 may be formed on the third substrate 200 and the thin film device layer 140 may be adhered thereon. Further, when the third base material 200 itself has an adhesive function, the formation of the adhesive layer 190 may be omitted.

  The adhesive layer 190 is not formed on the thin film device layer 140 side, but is formed on the third base material 200 side, and the third base material 200 is adhered to the thin film device layer 140 via the adhesive layer 190. May be. In the case where the third substrate 200 itself has an adhesive function, the formation of the adhesive layer 190 may be omitted.

The third substrate 200 may be inferior to the first substrate 100 in characteristics such as heat resistance and corrosion resistance. The mechanical properties of the third substrate 200 are required to have a certain degree of rigidity and strength depending on the type of equipment to be manufactured, but may be flexible and elastic. Can be a sheet.
As the third base material 200, for example, an optimal material such as a sheet-like thin plastic substrate or a considerably thick plastic substrate is selected and used depending on the type of equipment to be manufactured. Moreover, the 3rd base material 200 may be curved instead of a flat plate.

  When a plastic substrate is used as the third base material 200, the synthetic resin constituting this may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide , Polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH), Polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), precyclohexane terephthalate (PCT), polyether, polyether ketone (PEK), polyether ether ketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin , Polyvinyl chloride, polyurethane, fluoro rubber, chlorinated polyethylene, and other thermoplastic elastomers, epoxy resins, phenol resins, urea resins, melamine resins, unsaturated polyesters, silicone resins, polyurethanes, etc. Main copolymers, blends, polymer alloys and the like can be mentioned, and one or a laminate obtained by laminating two or more of these can be used.

  When a plastic substrate is used as the third base material 200, the large third base material 200 can be integrally formed. Further, if the third base material 200 is a plastic substrate, it can be easily manufactured even if it has a complicated shape such as a curved surface or an uneven surface. Furthermore, if the third base material 200 is a plastic substrate, there is an advantage that material costs and manufacturing costs can be reduced. Therefore, if the third substrate 200 is a plastic substrate, it is advantageous when manufacturing a large and inexpensive device such as a liquid crystal display device or an organic EL display device.

  In this embodiment, the third base 200 is an active matrix liquid crystal display device, for example, an active device of a display device such as an electrophoretic display panel that uses the electrophoretic effect of particles using a change in reflectivity by applying an electric field. As in the case where the matrix substrate is configured as a thin film device device, the device itself forms the base of the device independently, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May constitute a part of.

(Seventh step)
As shown by S7 in FIG. 1, the manufacturing method of the thin film device device of the present embodiment includes a second base material separation step as a seventh step after the third base material integration step which is the sixth step. Have. In this step, as shown in FIG. 9, the second substrate 180 is separated from the thin film device layer 140.

  The separation of the second substrate 180 from the thin film device layer 140 is performed by heating and thermally melting the second separation layer 160 made of a hot-melt adhesive, weakening the adhesive force of the second separation layer 160, As shown by B, the second substrate 180 is peeled off from the thin film device layer 140 side. Thereby, the thin film device layer 140 is transferred to the third substrate 200. As shown in FIG. 9, in this embodiment, the separation is performed in the layer of the second separation layer 160.

  Therefore, as shown in FIG. 10, the second separation layer 160 remaining on the surface of the thin film device layer 140 is removed, whereby the thin film device device 2 in which the thin film device layer 140 is transferred to the third substrate 200. Can be manufactured. On the other hand, the second base material 180 can be repeatedly used by removing the adhering hot-melt adhesive.

The removal of the second separation layer 160 can be performed by immersing at least a region including the second separation layer 160 in pure water when a water-soluble adhesive is used for the second separation layer 160. .
In this embodiment, the separation is performed in the layer of the second separation layer 160, but peeling is performed at the interface of the second separation layer 160 by selecting an agent that forms the second separation layer 160. And the second substrate 180 can be separated from the thin film device layer 140. In this way, the removal process of the second separation layer 160 is not necessary, which is preferable from the viewpoint of simplification of the process and cost reduction. The separation of the second substrate 180 from the thin film device layer 140 can be performed by causing a peeling phenomenon in the layer of the second separation layer 160 or at least one of the second separation layers 160. .

  Thus, since the thin film device layer 140 is transferred twice by performing the sixth step and the seventh step, the thin film device layer 140 is transferred to the third substrate 200. In FIG. 5, the thin film device layer 140 remains the laminated structure when formed on the first base material 100. According to such a process, since the thin film device layer 140 is exposed as it is when it is formed on the first substrate 100, the thin film device of the thin film device device 2 is exposed as in Example 3 described later. It is excellent in that a device such as an electro-optical device can be manufactured by further processing on the layer 140.

  In the first embodiment and the second embodiment, in the second step, organic functional elements such as the organic TFT elements 20 are formed in a matrix on the first base material 100, and this is performed. A scanning line electrically connected to the gate of the organic TFT element 20, a data line electrically connected to the source of the organic TFT element 20, and a pixel electrode electrically connected to the drain of the organic TFT element 20 It is preferable that these wirings and electrodes are also transferred to the substrate to be finally mounted on the product, that is, the second base material 180 or the third base material 200. Note that after transfer to a substrate that is finally mounted on a product, wiring or the like that does not require high-temperature processing may be formed on the substrate.

  In this way, by forming organic functional elements such as organic TFTs in a matrix shape, an active matrix substrate manufacturing method can be obtained using the above-described thin film device device manufacturing method. An active matrix substrate can be manufactured by the manufacturing method. In such an active matrix substrate, an organic TFT or the like can be provided as an organic functional element for a drive circuit.

  Organic functional elements include not only organic TFT elements but also organic EL elements. The organic functional element does not include an organic TFT element, and may include an organic EL element, or may include an organic EL element and an organic TFT element. When the organic functional element includes an organic EL element and an organic TFT element, the organic functional element emits an organic EL element that emits light in response to an image signal, and an organic TFT element that switches to the organic EL element. The organic functional element may be configured as an image signal, even when the organic functional element does not include the organic TET element but includes the organic EL element. For example, an organic EL element that emits light may be provided.

  Furthermore, an electro-optical device manufacturing method can be obtained by using such an active matrix substrate manufacturing method, and an electro-optical device can be manufactured by this electro-optical device manufacturing method. Examples of the electro-optical device include a liquid crystal display device, a display device such as an electrophoretic display panel that uses the electrophoretic effect of particles, and the like, a display device that causes a change in reflectance by an electric field input, an organic EL display device, and the like. It can be manufactured by selecting an organic functional element or the like.

  Hereinafter, a manufacturing method of the above-described thin film device device, a thin film device device manufactured using the manufacturing method of the thin film device device, a manufacturing method of the active matrix substrate, an active matrix substrate manufactured using the manufacturing method of the active matrix substrate, An electro-optical device manufacturing method and an electro-optical device manufactured using the electro-optical device manufacturing method will be described.

[Example 1]
As Example 1, a specific example of the first embodiment, that is, a thin film device layer 140 including an organic TFT, which is a thin film device, formed on the first base material 100 is transferred to the second base material 180. A specific example of a manufacturing method of a thin film device device to be performed and a thin film device device manufactured using the manufacturing method of the thin film device device will be described.

(First step)
In this step, the first separation layer 120 was formed under the following conditions.
First substrate 100: Glass substrate Surfactant: Nonionic surfactant Surfactant arrangement: Placed by printing on other parts except the peripheral part by screen printing Drying: 120 ° C., 30 minutes Separation layer 120: Parylene film formation / parylene film formation conditions diX_C manufactured by Sansei Kasei Co., Ltd.
Pressure: 0.01 Torr
Sublimation temperature: 100-170 ° C
Thermal decomposition temperature: 650 ° C
Deposition chamber temperature: room temperature Parylene film thickness: 10 μm thick

(Second step)
In this step, the thin film device layer 140 was formed under the following conditions.
-Organic TFT formation process Gate electrode 150: Cr film Patterning of deposited gate electrode 150 with a thickness of 50 nm by sputtering method: Photolithographic gate insulating film 148: Forming organic insulator film by spin coating method Organic insulator film: Polyvinyl butyral, Film thickness 100nm
Organic semiconductor film 144: Polyhexylthiophene organic semiconductor material is formed by spin coating, film thickness is 80 nm
Device patterning, gate electrode contact: photolithography formation and source / drain electrode 152 formation Note that a protective film may be further formed on the interlayer insulating layer.

(Third step)
In this step, the second substrate 180 was integrated under the following conditions.
An adhesive layer 160 made of an epoxy resin as an adhesive layer is formed on the thin film device layer 140 including the organic TFT, and then the thin film device layer 140 is 150 mm long × 150 mm wide × thickness through the adhesive layer 160. A second substrate 180 made of soda glass having a thickness of 0.7 mm is attached. Heat is applied to the adhesive layer 160 to cure the epoxy resin, and the second substrate 180 and the thin film device layer 140 side are bonded. The adhesive layer 160 may be an ultraviolet curable adhesive. In this case, the polymer is cured by irradiating ultraviolet rays from the second substrate 180 side.

(Fourth process)
In this step, all the layers were cut so as to include a portion having a strong adhesion at the end of the first substrate 100.
(Fifth step)
In this step, the first base material 100 was peeled from the thin film device layer 140 side after causing a peeling phenomenon in the first separation layer 120.
As a result, the thin film device layer 140 was transferred to the second substrate 180.

  The thin film device 1 manufactured as described above has an advantage that, for example, if a flexible substrate made of plastic or the like is used for the second substrate 180, the thin film device 1 has an advantage that it is strong against bending and light and is resistant to dropping. It is formed as a device device 1. Further, as a constituent element of an organic thin film device that is an organic functional element, it is possible to manufacture a self-supporting microcomputer by mounting a CPU, a RAM, an input circuit, and a photovoltaic power generation cell.

[Example 2]
As Example 2, a thin film device layer 140 including various organic functional elements such as organic TFT elements formed in a matrix on the first base material 100 is formed, and this is transferred to the second base material 180. An active matrix substrate manufacturing method for manufacturing an active matrix substrate, an active matrix substrate manufactured using this active matrix substrate manufacturing method, a liquid crystal display device, an electrophoretic display device, etc. using such an active matrix substrate manufacturing method An electro-optical device manufacturing method for manufacturing an electro-optical device, which is a thin film device device, and a specific example of an electro-optical device manufactured using the electro-optical device manufacturing method will be described.

An active matrix substrate manufacturing method according to the present embodiment and an active matrix substrate manufactured using this active matrix substrate manufacturing method will be described. The description of the same parts as those in the first embodiment will be omitted as appropriate.
(First step)
In this step, the first separation layer 120 composed of a parylene film was formed on the first base material 100 composed of a glass substrate. Specifically, a parylene film was formed on a glass substrate of length 100 mm × width 100 mm × thickness 1.1 mm. Modification of the substrate surface using a surfactant is the same as in Example 1.

(Second step)
In this step, the organic TFT constituting the thin film device layer 140 was formed in a matrix on the first separation layer 120.
The gate electrode 150 was formed in a desired pattern by depositing a Cr metal film with a film thickness of 50 nm by sputtering and by photolithography and etching.

Next, a gate insulating film 148 was formed. This film was formed by spin coating an organic insulator film. Polyvinyl butyral was used as the organic insulator film, and a film thickness of 100 nm was formed.
Next, the organic semiconductor film 144 is formed by setting a film thickness of 80 nm by a spin coating method using a polyhexylthiophene organic semiconductor material.

Element patterning and gate electrode contact are made by photolithography and etching.
A certain resist pattern is used as an interlayer insulating film having a contact hole without being removed after the etching process.
Next, source / drain electrodes 152 are formed.

  Thus, the thin film device layer 140 provided with the organic TFT is formed. Note that a protective film may be further formed over the interlayer insulating layer. A thin film device layer is formed by connecting a drain electrode of a pixel switching organic TFT and a pixel individual electrode.

(Third step)
In this step, an inexpensive soda glass substrate was bonded as the second base material 180 through the adhesive layer 160.
(Fourth process)
In this step, the end of the first base material 100 was cut.
(Fifth step)
In this step, the first base material 100 was peeled from the thin film device layer 140 side after causing a peeling phenomenon in the first separation layer 120.
As a result, the thin film device layer 140 was transferred to the second substrate 180.

  Thereby, the active matrix substrate is completed. In this active matrix substrate, the pixel electrode is exposed on the back side of the thin film device layer. Therefore, it is possible to form an electro-optic display cell on the back side of the thin film device layer of the active matrix substrate.

An electro-optical device manufacturing method for manufacturing an electro-optical device using such an active matrix substrate, and a specific example of an electro-optical device manufactured using the electro-optical device manufacturing method will be described.
An electro-optical display device as an electro-optical device according to the present embodiment includes the above-described active matrix substrate, a counter substrate bonded to the active matrix substrate with a predetermined interval, and a space between the counter substrate and the active matrix substrate. And an electro-optical material such as an electrophoretic fluid.

The active matrix substrate and the counter substrate are bonded together with a gap material-containing sealing material formed along the outer peripheral edge of the counter substrate through a predetermined gap, and an inner region of the sealing material is an electro-optical material enclosing region. Is done. As the sealing material, an epoxy resin or various ultraviolet curable resins can be used. Here, since the sealing material is partially interrupted, if the inner region of the sealing material is brought into a reduced pressure state after the counter substrate and the active matrix substrate are bonded together, the display liquid is injected under reduced pressure from the interrupted portion of the sealing material. After sealing, the interrupted portion may be closed with a sealant.
The counter substrate is smaller than the active matrix substrate, and driver portions such as a scanning line driving circuit and a data line driving circuit, which will be described later, are formed in a region protruding from the outer peripheral edge of the counter substrate of the active matrix substrate.

  In the electro-optic display device configured as described above, in the active matrix substrate, the central region is a pixel portion that performs actual display, and its peripheral portion is a drive circuit portion. In the pixel portion, a pixel switching organic TFT connected to a data line and a scanning line formed of a conductive semiconductor film or the like is formed for each pixel arranged in a matrix. For the data line, a data side driving circuit including a shift register, a level shifter, a video line, an analog switch, and the like is configured. A scanning side drive circuit including a shift register and a level shifter is configured for the scanning lines.

[Example 3]
As Example 3, a specific example of the second embodiment, that is, after the thin film device layer 140 including the organic TFT formed on the first substrate 100 is transferred to the second substrate 180 Furthermore, a method of manufacturing an electro-optical device using the method for manufacturing a thin film device device to be transferred to the third substrate 200, and the thin film device device manufactured using the method for manufacturing the thin film device device, and the electro-optical device A specific example of the electro-optical device manufactured using the manufacturing method will be described.

  FIG. 10 shows a main part of an electro-optical device 30 which is an electro-optical display device according to this example. The electro-optical device 30 uses the active matrix substrate according to the second embodiment. As the organic functional elements, organic TFT elements arranged in a matrix and provided in the active matrix substrate, and the active matrix substrate And an organic EL element disposed on the top. Since the basic configuration of the active matrix substrate according to the present embodiment is the same as that of the second embodiment, description thereof is omitted. The configuration of the organic TFT element can be the same as that of the first embodiment.

  The active matrix substrate and the organic EL element 40 used in the electro-optical device 30 are formed on the first base material 100 under optimum conditions, and then the first base material 100 to the second base material 180 is used. After transfer, it is joined and integrated with a flexible third base material 200 made of a plastic sheet substrate. Since the thin film device layer 140 is transferred twice, the thin film device layer 140 is transferred to the first base material 100 in the state where the thin film device layer 140 has been transferred to the third base material 200. The laminated structure when forming the film is maintained.

The thin film device layer 140 includes the organic TFT element 30 and the organic EL element 40 in addition to the organic TFT element 30.
The electro-optical device 30 includes a first individual electrode 220 in the organic EL element 40 electrically connected to the source / drain electrode 152 at one end of the organic TFT element 30, and a conductive polymer formed on the individual electrode 220. The film 240 includes an organic light emitting film 260 formed on the conductive polymer film 240, and a common electrode 280 formed on the organic light emitting film.

  The individual electrode 220 is formed of a transparent conductive film. The transparent conductive film is formed by selectively forming an ITO film with a thickness of 100 nm by sputtering. The conductive polymer film 240 is a charge injection layer for increasing the charge injection efficiency, and is formed by forming a polyethylenedioxythiophene film with a thickness of 50 nm by spin coating.

The organic light emitting film 260 is an organic light emitting layer formed using an organic light emitting material, and is formed by spin coating with a thickness of 80 nm using a polyphenylene vinylene material as the organic light emitting material. The common electrode 280 is formed by vacuum deposition of barium and silver.
In this way, the thin film device layer 140 is formed. The formation of the conductive polymer film 240 is arbitrary.

  As described above, each embodiment and each example have been described. As a substrate to be finally mounted on a product, a large substrate, an inexpensive substrate, a light substrate, a substrate that can withstand deformation, and a substrate that does not break are used as appropriate. be able to. Accordingly, it is possible to configure a thin film device device, an active matrix substrate, and an electro-optical device that are inexpensive, lightweight, and excellent in impact resistance.

It is a figure which shows each process of the manufacturing method of the thin film device apparatus, active matrix substrate, and electro-optical apparatus to which this invention is applied. It is sectional drawing for demonstrating a 1st separation membrane formation process. It is sectional drawing for demonstrating an organic functional element formation process. It is an expanded sectional view which shows the principal part of the organic functional element formed by the organic functional element formation process shown in FIG. It is sectional drawing for demonstrating a 2nd base material integration process. It is sectional drawing for demonstrating a 1st base material separation process.

Thin film device manufactured through a method of manufacturing a thin film device having a first separation film forming step, an organic functional element forming step, a second base material integration step, a removal step, and a first base material separation step FIG. It is sectional drawing for demonstrating a 3rd base material integration process. It is sectional drawing for demonstrating a 2nd base material separation process. 1st separation membrane formation process, organic functional element formation process, 2nd base material integration process, removal process, 1st base material separation process, 3rd base material integration process, 2nd base material separation It is sectional drawing of the thin film device apparatus manufactured through the manufacturing method of the thin film device apparatus which has a process. FIG. 6 is a cross-sectional view of an electro-optical device manufactured using the method for manufacturing an electro-optical device to which the present invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Thin film device apparatus 10 The part with strong adhesive force 20 Organic functional element, organic TFT element 30 Electro-optical apparatus 40 Organic functional element, organic EL element 100 1st base material 120 1st separation membrane 180 2nd Base material 200 Third base material S1 First separation membrane formation step S2 Organic functional element formation step S3 Second base material integration step S4 Removal step S5 First base material separation step S6 Third base material integration Step S7 Second substrate separation step

Claims (14)

A first separation membrane forming step of forming a first separation membrane on the first substrate;
An organic functional element forming step of forming an organic functional element on the first separation membrane;
A second substrate integration step of integrating a second substrate with the organic functional element;
A first base material separation step for separating the first base material from the organic functional element,
In the first separation membrane forming step, the adhesion between the first base material and the first separation membrane is partially different,
Prior to the first base material separation step , the second base material integration step and the first base material, in which a portion having strong adhesion between the first base material and the first separation membrane is removed. A method for manufacturing a thin film device device comprising a removal step performed between a separation step or between the organic functional element formation step and the second base material integration step .   2. The method of manufacturing a thin film device according to claim 1, wherein in the first separation membrane forming step, the surfactant is partially disposed on the first substrate, whereby the first substrate and the first substrate are arranged. A manufacturing method of a thin film device device, characterized in that the adhesion strength with a separation membrane is partially different.   3. The method of manufacturing a thin film device according to claim 2, wherein in the first separation membrane forming step, the surfactant is disposed on the entire surface of the first base material, and then the surfactant at a predetermined position is removed. A method for producing a thin film device device, wherein a surfactant is partially disposed on a first substrate, and the adhesion between the first substrate and the first separation membrane is partially varied.   3. The method of manufacturing a thin film device according to claim 2, wherein in the first separation membrane forming step, the surfactant is disposed at a predetermined position of the first base material by a printing method, thereby interfacing with the first base material. A method for manufacturing a thin film device device, wherein an activator is partially disposed, and the adhesion between the first substrate and the first separation membrane is partially varied.   5. The method of manufacturing a thin film device according to claim 1, wherein in the removing step, a portion having a strong adhesion between the first base material and the first separation membrane is removed by dicing. A method of manufacturing a thin film device device.   5. The method of manufacturing a thin film device according to claim 1, wherein in the removing step, a portion having a strong adhesion between the first base material and the first separation membrane is removed by laser ablation. A method of manufacturing a thin film device device. 7. The method of manufacturing a thin film device device according to claim 1, wherein a polyparaxylylene film is used as the first separation film . The method of manufacturing a thin film device according to any one of claims 1 to 7, the method of manufacturing a thin film device and wherein the use of flexible sheets as the second substrate. In the manufacturing method of the thin film device apparatus as described in any one of Claims 1 thru | or 8,
After the first base material separation step, a third base material integration step of integrating a third base material on the opposite side of the organic functional element to the second base material, A method for producing a thin film device device, comprising: a second substrate separation step of separating the substrate from the organic functional element . 10. The method of manufacturing a thin film device device according to claim 9, wherein a flexible sheet is used as the third base material. The method for manufacturing a thin film device device according to any one of claims 1 to 10, wherein the organic functional element includes an organic TFT element . 11. The method of manufacturing a thin film device device according to claim 1, wherein the organic functional element has a display device having an organic EL element that emits light with respect to an image signal, or an image signal. A manufacturing method of a thin film device device comprising a display having an organic EL element that emits light and an organic TFT element that performs switching on the organic EL element . 13. A method for manufacturing an active matrix substrate , wherein the thin film device device manufacturing method according to claim 1 is used to form an active matrix substrate by forming the organic functional elements in a matrix . An electro-optical device manufacturing method for manufacturing an electro-optical device using the active matrix substrate manufacturing method according to claim 13 .

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