JP2003243718A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
JP2003243718A
JP2003243718A JP2002037291A JP2002037291A JP2003243718A JP 2003243718 A JP2003243718 A JP 2003243718A JP 2002037291 A JP2002037291 A JP 2002037291A JP 2002037291 A JP2002037291 A JP 2002037291A JP 2003243718 A JP2003243718 A JP 2003243718A
Authority
JP
Japan
Prior art keywords
light emitting
substrate
emitting diode
diode chip
metal member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002037291A
Other languages
Japanese (ja)
Inventor
Wataru Noda
渉 野田
Takuma Hashimoto
拓磨 橋本
Masaru Sugimoto
勝 杉本
Eiji Shiohama
英二 塩濱
Hideyoshi Kimura
秀吉 木村
Yoshiyuki Uchinono
良幸 内野々
Toshiyuki Suzuki
俊之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2002037291A priority Critical patent/JP2003243718A/en
Publication of JP2003243718A publication Critical patent/JP2003243718A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To improve heat dissipation and to suppress the secular deterioration of reflection property. <P>SOLUTION: One to a plurality of storage recesses 3 opened to a front face are formed on the surface of a ceramic substrate 2, and light emitting diode chips 1 are mounted on the bottoms of the storage recesses 3. A plurality of radiation fins 6 are protrusively disposed downward in positions turning back to the storage recess 3 at the back of the substrate 2. Light that the light emitting diode chip 1 emits is reflected on the inner peripheral face of the storage recess 3 and it is efficiently radiated to the front of the substrate 2. The inner peripheral face of the storage recess 3 fulfills the function of a reflector. Thus, secular deterioration due to heat and light which the light emitting diode chip 1 emits can be suppressed compared to a conventional case where the function of the reflector is given to a resin frame member 26. Since the radiation fins 6 are arranged at the back of the substrate 2 and a surface area is increased, heat that the light emitting diode chip 1 emits can efficiently be radiated outside through the substrate 2. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、発光ダイオードチ
ップを用いた発光装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using a light emitting diode chip.

【0002】[0002]

【従来の技術】本発明者らは、発光ダイオードチップを
用いた発光装置として、図15に示すものを既に提案し
ている(特願2001−258680参照)。この従来
装置は、アルミニウムなどの熱伝導性の高い金属材料よ
りなり前面に開口する収納凹所22を有する突出部21
が前方に向けて突設された金属板20と、収納凹所22
の底面に実装されて金属板20に熱的に結合された発光
ダイオードチップ24と、突出部21が挿入される挿入
孔25aが形成されて金属板20の裏面に重ねる形で接
合された絶縁基材25と、絶縁基材25の表面に接合さ
れ発光ダイオードチップ24並びに突出部21の周囲を
囲む枠状の枠部材26と、透光性を有し発光ダイオード
チップ24を封止する樹脂部27とを備え、枠部材26
の内側に充填された樹脂部27を透過して前方(図15
における上方)へ放射する発光ダイオードチップ24の
発する光により照明を行うものである。
2. Description of the Related Art The present inventors have already proposed a light emitting device using a light emitting diode chip, as shown in FIG. 15 (see Japanese Patent Application No. 2001-258680). This conventional device is made of a metal material having a high thermal conductivity such as aluminum, and has a protruding portion 21 having a storage recess 22 that is open to the front.
With a metal plate 20 projecting forward and a storage recess 22
Of the light emitting diode chip 24 mounted on the bottom surface of the metal plate 20 and thermally coupled to the metal plate 20, and an insulating substrate formed with an insertion hole 25a into which the protruding portion 21 is inserted and being overlapped with the back surface of the metal plate 20. The material 25, a frame-shaped frame member 26 that is joined to the surface of the insulating base material 25 and surrounds the light emitting diode chip 24 and the protruding portion 21, and a resin portion 27 that is transparent and that seals the light emitting diode chip 24. And a frame member 26
Through the resin portion 27 filled inside the
Illumination is performed by the light emitted from the light emitting diode chip 24 radiating upward.

【0003】[0003]

【発明が解決しようとする課題】ところで、発光ダイオ
ードの光量は一般に他の照明用の光源(放電ランプや白
熱灯など)に比較して少ないので、光量を増加させるた
めには発光ダイオードに流す電流を大きくする必要があ
る。現状の発光ダイオードは入力電力を光に変換する効
率が10%前後であり、入力電力の大部分が熱として消
費されてしまっており、その熱によって発光ダイオード
自体の温度が著しく上昇することになる。そして、発光
ダイオードは温度が上昇するとフォノン散乱などの現象
によって発光効率が低下することが知られており、しか
も、温度上昇が著しい場合には発光ダイオードチップ2
4を封止する樹脂部27や、反射板の機能を有する樹脂
製の枠部材26が劣化し、これらの要因によってさらに
発光効率の低下を招くことになる。
The light quantity of the light emitting diode is generally smaller than that of other light sources for illumination (such as discharge lamps and incandescent lamps). Therefore, in order to increase the light quantity, a current flowing through the light emitting diode is used. Needs to be increased. The current light emitting diode has an efficiency of converting input power into light of about 10%, and most of the input power is consumed as heat, and the heat causes the temperature of the light emitting diode itself to remarkably rise. . It is known that when the temperature of the light emitting diode rises, the light emitting efficiency decreases due to a phenomenon such as phonon scattering, and when the temperature rises significantly, the light emitting diode chip 2
The resin portion 27 that seals 4 and the resin frame member 26 having the function of the reflection plate are deteriorated, and due to these factors, the luminous efficiency is further reduced.

【0004】そこで上記従来装置では、収納凹所22の
底面に実装した発光ダイオードチップ24を金属板20
に熱的に結合することで放熱性を向上して発光ダイオー
ドチップ24の温度上昇を抑え、上述のような樹脂部2
7の劣化などによる発光効率の低下を抑制している。
Therefore, in the above conventional device, the light emitting diode chip 24 mounted on the bottom surface of the storage recess 22 is mounted on the metal plate 20.
By thermally coupling to the resin part 2 as described above, the heat dissipation is improved and the temperature rise of the light emitting diode chip 24 is suppressed.
This suppresses a decrease in luminous efficiency due to deterioration of No. 7 and the like.

【0005】しかしながら、上記従来装置では、発光ダ
イオードチップ24の発する熱、および発光ダイオード
チップ24から放射される光によって樹脂製の枠部材2
6が劣化して着色され、反射性能が低下してしまう虞が
あった。
However, in the above conventional device, the frame member 2 made of resin is generated by the heat generated by the light emitting diode chip 24 and the light emitted from the light emitting diode chip 24.
6 was deteriorated and colored, and the reflection performance might be deteriorated.

【0006】本発明は上記事情に鑑みて為されたもので
あり、その目的は、放熱性の向上とともに反射性能の経
年劣化を抑制することができる発光装置を提供すること
にある。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a light emitting device capable of improving heat dissipation and suppressing deterioration of reflection performance over time.

【0007】[0007]

【課題を解決するための手段】請求項1の発明は、上記
目的を達成するために、前面に開口する1乃至複数の収
納凹所が表面に形成されたセラミック製の基板と、前記
収納凹所の底面に実装される発光ダイオードチップと、
前記基板の裏面に配置される放熱手段とを備えたことを
特徴とし、発光ダイオードチップの発する光は収納凹所
の内周面に反射されて前方へ効率よく放射され、また、
収納凹所が形成される基板がセラミック製であるから発
光ダイオードチップの発する熱や光による経年劣化を抑
制することができる。しかも、基板の裏面に放熱手段を
配置することで放熱性の向上が図れる。
In order to achieve the above object, the invention of claim 1 is directed to a ceramic substrate having one or a plurality of storage recesses formed on the front surface, and a storage recess. Light emitting diode chip mounted on the bottom of the place,
Characterized in that it comprises a heat dissipation means arranged on the back surface of the substrate, the light emitted from the light-emitting diode chip is reflected on the inner peripheral surface of the storage recess and efficiently radiated forward,
Since the substrate on which the storage recess is formed is made of ceramic, it is possible to suppress deterioration over time due to heat or light emitted from the light emitting diode chip. Moreover, by disposing the heat dissipation means on the back surface of the substrate, heat dissipation can be improved.

【0008】請求項2の発明は、請求項1の発明におい
て、前記放熱手段は、セラミック製の放熱フィンからな
ることを特徴とし、放熱フィンにより基板の裏面の表面
積を増大させて放熱性の向上が図れる。
According to a second aspect of the present invention, in the first aspect of the invention, the heat radiating means is composed of a ceramic heat radiating fin, and the heat radiating fin increases the surface area of the back surface of the substrate to improve the heat radiating property. Can be achieved.

【0009】請求項3の発明は、請求項1の発明におい
て、前記放熱手段は、金属部材からなることを特徴と
し、一般的にセラミックよりも金属の方が熱伝導率が高
いから、基板の裏面に金属部材を設けることで放熱性の
向上が図れる。
The invention of claim 3 is characterized in that, in the invention of claim 1, the heat dissipation means is made of a metal member, and since metal generally has a higher thermal conductivity than ceramics, By providing the metal member on the back surface, heat dissipation can be improved.

【0010】請求項4の発明は、請求項1又は2又は3
の発明において、前記基板の収納凹所底面に発光ダイオ
ードチップに当接する突起を設けたことを特徴とし、発
光ダイオードチップと基板の接触面積が増えて熱抵抗を
減少させることができ、発光ダイオードチップの発する
熱を効率よく基板に伝導させて放熱性がさらに向上す
る。
The invention of claim 4 is the invention of claim 1 or 2 or 3.
In the invention described above, a protrusion for abutting the light emitting diode chip is provided on the bottom surface of the recess of the substrate, the contact area between the light emitting diode chip and the substrate can be increased, and the thermal resistance can be reduced. The heat generated by is efficiently conducted to the substrate, and the heat dissipation is further improved.

【0011】請求項5の発明は、請求項1〜4の何れか
の発明において、前記基板の熱膨張率を発光ダイオード
チップを形成する基板の熱膨張率と略同一にしたことを
特徴とし、発光ダイオードチップと基板との間で急激な
温度変化が生じた場合においても発光ダイオードチップ
の電極部分に応力が発生し難くなり、発光ダイオードチ
ップに亀裂や破損等が生じるのを防いで信頼性の向上が
図れる。
According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the coefficient of thermal expansion of the substrate is substantially the same as the coefficient of thermal expansion of the substrate forming the light emitting diode chip, Even when a sudden temperature change occurs between the light emitting diode chip and the substrate, stress is less likely to occur in the electrode part of the light emitting diode chip, and cracks and damages are prevented from occurring in the light emitting diode chip to ensure reliability. Can be improved.

【0012】請求項6の発明は、請求項3の発明におい
て、前記基板の裏面と金属部材の表面とに凹凸嵌合する
嵌合部をそれぞれ設けたことを特徴とし、基板と金属部
材を接着剤を使わずに強固に固定することができ、結果
的に材料費のコストダウンが図れる。
According to a sixth aspect of the present invention, in the third aspect of the present invention, the back surface of the substrate and the front surface of the metal member are provided with fitting portions that are engaged with each other by projections and recesses. It can be firmly fixed without using any agent, resulting in cost reduction of material cost.

【0013】請求項7の発明は、上記目的を達成するた
めに、前面に開口する1乃至複数の収納凹所が表面に形
成される金属部材の少なくとも当該表面をセラミックコ
ーティングしてなる基板と、前記収納凹所の底面に実装
される発光ダイオードチップとを備えたことを特徴と
し、発光ダイオードチップの発する光は収納凹所の内周
面に反射されて前方へ効率よく放射され、また、収納凹
所が形成される基板の表面がセラミックコーティングさ
れているから発光ダイオードチップの発する熱や光によ
る経年劣化を抑制することができる。さらに、基板が金
属部材で形成されていることから放熱性の向上が図れ
る。
In order to achieve the above object, a seventh aspect of the present invention is a substrate formed by ceramic-coating at least the surface of a metal member having one or a plurality of storage recesses formed in the front surface formed on the surface. A light emitting diode chip mounted on the bottom surface of the storage recess, wherein the light emitted from the light emitting diode chip is reflected by the inner peripheral surface of the storage recess and efficiently radiated forward, and the storage Since the surface of the substrate on which the recess is formed is ceramic-coated, it is possible to suppress deterioration over time due to heat or light emitted from the light emitting diode chip. Further, since the substrate is made of a metal member, heat dissipation can be improved.

【0014】[0014]

【発明の実施の形態】(実施形態1)本実施形態は、図
1に示すように前面に開口する1乃至複数の収納凹所3
がセラミック製の基板2の表面に形成され、各収納凹所
3の底面に発光ダイオードチップ1が実装される。
BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) In this embodiment, as shown in FIG.
Is formed on the surface of the ceramic substrate 2, and the light emitting diode chip 1 is mounted on the bottom surface of each storage recess 3.

【0015】基板2の表面(図1における上面)には1
乃至複数の円柱状の突台2aが前方(図1における上
方)へ向けて突設されており、この突台2aの前面に平
面視略円形に開口するすり鉢状の収納凹所3が形成され
ている。収納凹所3の底面は平坦面となっており、この
平坦な底面に発光ダイオードチップ1がフェースダウン
実装される。また、収納凹所3の内周面及び中心部を除
く底面を含めた基板2の表面には銅箔よりなる配線部
(配線パターン)4が形成されている。さらに、基板2
裏面(図1における下面)における収納凹所3と背向す
る位置に複数の放熱フィン6が下方へ向けて突設されて
いる。
On the surface of the substrate 2 (upper surface in FIG. 1), 1
A plurality of columnar protrusions 2a are projected forward (upward in FIG. 1), and a mortar-shaped storage recess 3 is formed on the front surface of the protrusions 2a and is open in a substantially circular shape in plan view. ing. The bottom surface of the storage recess 3 is a flat surface, and the light emitting diode chip 1 is mounted face down on the flat bottom surface. A wiring portion (wiring pattern) 4 made of copper foil is formed on the surface of the substrate 2 including the inner peripheral surface of the storage recess 3 and the bottom surface excluding the central portion. Furthermore, the substrate 2
A plurality of radiating fins 6 are provided so as to project downward at positions on the back surface (the lower surface in FIG. 1) that face the storage recesses 3 and their backs.

【0016】発光ダイオードチップ1は、サファイア基
板1a上に窒化ガリウム系の発光層(n層1b及びp層
1c)が形成されてなり、各層1b,1cには電極部5
a,5bが接合されている。ここで、一方の電極部5a
は発光ダイオードチップ1の主表面(p層1c)に接合
され、他方の電極部5bは発光ダイオードチップ1の端
部におけるp層1cを一部除去して露出させたn層1b
に接合されており、各電極部5a,5bが配線部4と電
気的に接続され、配線部4を介して発光ダイオードチッ
プ1に電力が供給される。但し、発光ダイオードチップ
1の構成は一例であって、例えばn層1bとp層1cが
逆になった構成のものや窒化ガリウム系以外の半導体か
らなるものであってもよい。
The light emitting diode chip 1 comprises a gallium nitride-based light emitting layer (n layer 1b and p layer 1c) formed on a sapphire substrate 1a, and an electrode portion 5 is formed on each layer 1b, 1c.
a and 5b are joined. Here, one electrode portion 5a
Is bonded to the main surface (p layer 1c) of the light emitting diode chip 1, and the other electrode portion 5b is an n layer 1b exposed by partially removing the p layer 1c at the end of the light emitting diode chip 1.
The electrode portions 5a and 5b are electrically connected to the wiring portion 4, and power is supplied to the light emitting diode chip 1 via the wiring portion 4. However, the structure of the light-emitting diode chip 1 is an example, and for example, the structure in which the n layer 1b and the p layer 1c are reversed or a semiconductor other than gallium nitride-based may be used.

【0017】而して、本実施形態では、発光ダイオード
チップ1の発する光が収納凹所3の内周面で反射されて
基板2の前方へ効率よく放射されるものであり、収納凹
所3の内周面が反射板の機能を果たしている。このよう
にセラミック製の基板2に反射板の機能を持たせたこと
により、樹脂製の枠部材26に反射板の機能を持たせた
従来例に比較して、発光ダイオードチップ1の発する熱
や光による経年劣化を抑制することができる。また、セ
ラミックは一般に樹脂に比較して熱伝導率が高く、さら
に本実施形態では基板2の裏面に放熱フィン6を設けて
表面積を増大させているから、発光ダイオードチップ1
の発する熱を基板2を通して効率よく外部に放熱するこ
とができる。
Thus, in this embodiment, the light emitted from the light emitting diode chip 1 is reflected by the inner peripheral surface of the storage recess 3 and is efficiently radiated to the front of the substrate 2, and the storage recess 3 The inner peripheral surface of the plays the function of a reflector. By thus providing the ceramic substrate 2 with the function of the reflecting plate, heat generated by the light emitting diode chip 1 and the heat generated by the light emitting diode chip 1 can be compared with the conventional example in which the resin frame member 26 has the function of the reflecting plate. Aging deterioration due to light can be suppressed. Further, ceramic generally has a higher thermal conductivity than resin, and in this embodiment, the surface area is increased by providing the radiation fins 6 on the back surface of the substrate 2, so that the light emitting diode chip 1
The heat generated by can be efficiently radiated to the outside through the substrate 2.

【0018】ところで、発光ダイオードチップ1を形成
するサファイア基板1aと熱膨張率が略同一のセラミッ
ク材料にて基板2を形成すれば、発光ダイオードチップ
1と基板2との間で急激な温度変化が生じた場合におい
ても電極部5a,5bに応力が発生し難くなり、発光ダ
イオードチップ1に亀裂や破損等が生じるのを防いで信
頼性の向上が図れるという利点がある。
By the way, if the substrate 2 is made of a ceramic material having a thermal expansion coefficient substantially the same as that of the sapphire substrate 1a forming the light emitting diode chip 1, a rapid temperature change between the light emitting diode chip 1 and the substrate 2 occurs. Even if it occurs, stress is less likely to be generated in the electrode portions 5a and 5b, and there is an advantage that the light emitting diode chip 1 is prevented from being cracked or damaged and the reliability is improved.

【0019】なお、本実施形態では収納凹所3の底面に
発光ダイオードチップ1を1つだけ実装しているが、図
2に示すように複数個(例えば2個)の発光ダイオード
チップ1,1を並べて実装してもよく、収納凹所3に対
する発光ダイオードチップ1の実装個数を増やすことで
発光効率の向上が図れるという利点がある。
In this embodiment, only one light emitting diode chip 1 is mounted on the bottom surface of the storage recess 3, but as shown in FIG. 2, a plurality of (for example, two) light emitting diode chips 1, 1 are mounted. May be mounted side by side, and there is an advantage that the luminous efficiency can be improved by increasing the number of mounted light emitting diode chips 1 in the storage recess 3.

【0020】また、本実施形態では発光ダイオードチッ
プ1をフェースダウン実装しているが、図3に示すよう
に収納凹所3の底面に発光ダイオードチップ1をフェー
スアップ実装してもよい。この場合、発光ダイオードチ
ップ1のサファイア基板1aと基板2とを直接接触さ
せ、両者の接触面積を増大させて熱抵抗を減少させるこ
とができるため、発光ダイオードチップ1の発する熱を
効率よく基板2に伝導させることができて放熱性がさら
に向上できる。なお、発光ダイオードチップ1と配線部
4との接続は、電極部5a,5bの代わりに金や銅ある
いはアルミニウムなどからなるワイヤ7でn層1b及び
p層1cと配線部4とをワイヤボンディングにより接合
して行われる。
Although the light emitting diode chip 1 is mounted face down in the present embodiment, the light emitting diode chip 1 may be mounted face up on the bottom surface of the storage recess 3 as shown in FIG. In this case, since the sapphire substrate 1a of the light emitting diode chip 1 and the substrate 2 can be directly contacted with each other to increase the contact area between them and reduce the thermal resistance, the heat generated by the light emitting diode chip 1 can be efficiently emitted from the substrate 2 The heat dissipation can be further improved. The light emitting diode chip 1 and the wiring portion 4 are connected by wire bonding the n layer 1b and the p layer 1c and the wiring portion 4 with a wire 7 made of gold, copper, aluminum or the like instead of the electrode portions 5a and 5b. It is done by joining.

【0021】あるいは、図4に示すように収納凹所3の
底面に設けた突起2bを発光ダイオードチップ1の主表
面(p層1c)に当接させるようにすれば、発光ダイオ
ードチップ1と基板2の接触面積が増えて熱抵抗を減少
させることができるため、発光ダイオードチップ1の発
する熱を効率よく基板2に伝導させることができて放熱
性がさらに向上できる。また、セラミックは電気絶縁性
に優れていることから、突起2bによって電極部5a,
5b間の電気的な短絡が防止できるという利点もある。
Alternatively, as shown in FIG. 4, if the projection 2b provided on the bottom surface of the storage recess 3 is brought into contact with the main surface (p layer 1c) of the light emitting diode chip 1, the light emitting diode chip 1 and the substrate are formed. Since the contact area of 2 increases and the thermal resistance can be reduced, the heat generated by the light emitting diode chip 1 can be efficiently conducted to the substrate 2, and the heat dissipation can be further improved. Further, since the ceramic is excellent in electric insulation, the protrusion 2b causes the electrode portion 5a,
There is also an advantage that an electrical short circuit between 5b can be prevented.

【0022】(実施形態2)本実施形態は、図5に示す
ように基板2裏面における収納凹所3と背向する位置
に、放熱フィン6の代わりに金属部材8を設けて放熱手
段とした点に特徴がある。但し、その他の構成について
は実施形態1と共通であるから、共通の構成要素には同
一の符号を付して説明を省略する。
(Embodiment 2) In this embodiment, as shown in FIG. 5, a metal member 8 is provided instead of the radiation fin 6 at a position on the back surface of the substrate 2 facing the housing recess 3 to form a heat radiation means. The point is characteristic. However, since other configurations are common to those of the first embodiment, common components are denoted by the same reference numerals, and description thereof will be omitted.

【0023】金属部材8は、基板2を形成するセラミッ
ク材料よりも熱伝導率が高く、基板2よりも厚みの小さ
い平板状に形成されており、基板2の裏面に接着や嵌合
などの適宜の方法で取り付けられる。あるいは、メッキ
や蒸着、セラミックからの析出、もしくはメタライズや
合金化などの方法を用いて金属部材8を基板2の裏面に
形成することも可能である。
The metal member 8 is formed in a flat plate shape having a thermal conductivity higher than that of the ceramic material forming the substrate 2 and a thickness smaller than that of the substrate 2. It is attached by the method of. Alternatively, it is also possible to form the metal member 8 on the back surface of the substrate 2 by using a method such as plating, vapor deposition, precipitation from ceramics, metallization or alloying.

【0024】而して、基板2の裏面に形成した金属部材
8により発光ダイオードチップ1の発する熱を効率よく
外部に放熱することができる。なお、本実施形態の発光
装置を筐体内に収納する場合に、図5に示すように金属
部材8を筐体9に接触させた状態で接合するようにすれ
ば金属部材8から筐体9を通してさらに効率よく放熱を
行うことができる。
Thus, the heat generated by the light emitting diode chip 1 can be efficiently dissipated to the outside by the metal member 8 formed on the back surface of the substrate 2. When the light emitting device of the present embodiment is housed in a housing, if the metal member 8 is joined in a state of being in contact with the housing 9 as shown in FIG. The heat can be dissipated more efficiently.

【0025】(実施形態3)本実施形態の基本構成は実
施形態1と共通であるから、共通の構成要素には同一の
符号を付して説明を省略する。
(Third Embodiment) Since the basic configuration of this embodiment is the same as that of the first embodiment, common components are designated by the same reference numerals and the description thereof will be omitted.

【0026】図6に示すように、基板2の裏面に配線部
を兼ねる複数の金属部材10が接合され、収納凹所3の
底面から基板2の裏面に貫通するスルーホール10aが
設けられるとともにこれらのするーホール10aにメッ
キが施されている。すなわち、このスルーホール10a
を介して、収納凹所3の底面に実装された発光ダイオー
ドチップ1の電極部5a,5bと各金属部材10とが電
気的に接続されることになる。なお、本実施形態では基
板2表面の配線部4は不要である。
As shown in FIG. 6, a plurality of metal members 10 also serving as wiring portions are joined to the back surface of the substrate 2, and through holes 10a are formed which penetrate from the bottom surface of the storage recess 3 to the back surface of the substrate 2 and these The hole 10a is plated. That is, this through hole 10a
The electrode parts 5a and 5b of the light emitting diode chip 1 mounted on the bottom surface of the storage recess 3 and the respective metal members 10 are electrically connected via the. In this embodiment, the wiring portion 4 on the surface of the substrate 2 is unnecessary.

【0027】而して、発光ダイオードチップ1の発する
熱は基板2のスルーホール10aを介して裏面の金属部
材10に伝導し、この金属部材10を通して外部に放熱
されることになる。
Thus, the heat generated by the light emitting diode chip 1 is conducted to the metal member 10 on the back surface through the through hole 10a of the substrate 2 and is radiated to the outside through the metal member 10.

【0028】(実施形態4)本実施形態の基本構成は実
施形態1と共通であるから、共通の構成要素には同一の
符号を付して説明を省略する。
(Fourth Embodiment) Since the basic structure of this embodiment is the same as that of the first embodiment, the same components are designated by the same reference numerals and the description thereof will be omitted.

【0029】図7に示すように、基板2の裏面に配線部
を兼ねる複数の金属部材10が接合され、収納凹所3の
底面から基板2の裏面に貫通するスルーホール10aに
メッキが施されている。また、収納凹所3の底面中央に
は前方へ突出する突部2cが設けられ、突部2cの両側
にそれぞれ発光ダイオードチップ1,1が実装されてい
る。一方の発光ダイオードチップ1は、片方の電極部5
aが配線部4と電気的に接続され、もう片方の電極部5
bがスルーホール10aを介して金属部材10と電気的
に接続されている。同様に他方の発光ダイオードチップ
1は、片方の電極部5aがスルーホール10aを介して
金属部材10と電気的に接続され、もう片方の電極部5
bが配線部4と電気的に接続されている。
As shown in FIG. 7, a plurality of metal members 10 also serving as wiring portions are joined to the back surface of the substrate 2, and a through hole 10a penetrating from the bottom surface of the storage recess 3 to the back surface of the substrate 2 is plated. ing. Further, a protrusion 2c protruding forward is provided at the center of the bottom surface of the storage recess 3, and the light emitting diode chips 1 and 1 are mounted on both sides of the protrusion 2c. One of the light emitting diode chips 1 has one electrode portion 5
a is electrically connected to the wiring part 4, and the other electrode part 5
b is electrically connected to the metal member 10 through the through hole 10a. Similarly, in the other light-emitting diode chip 1, one electrode portion 5a is electrically connected to the metal member 10 through the through hole 10a, and the other electrode portion 5a.
b is electrically connected to the wiring portion 4.

【0030】而して、2つの発光ダイオードチップ1の
発する熱はそれぞれ基板2のスルーホール10aを介し
て裏面の金属部材10に伝導し、この金属部材10を通
して外部に放熱されることになる。なお、2つの発光ダ
イオードチップ1の間を突部2cで仕切っているので、
電極部5a,5bと配線部4とを接続する導電性接着剤
の塗布時に、一方の発光ダイオードチップ1を接続する
導電性接着剤が他方の発光ダイオードチップ1の方へは
み出すことがなく、2つの発光ダイオードチップ1が電
気的に短絡するのを防止することができる。
The heat generated by the two light emitting diode chips 1 is conducted to the metal member 10 on the back surface through the through holes 10a of the substrate 2, and is radiated to the outside through the metal member 10. In addition, since the protrusion 2c partitions between the two light emitting diode chips 1,
When the conductive adhesive that connects the electrode portions 5a and 5b and the wiring portion 4 is applied, the conductive adhesive that connects one of the light emitting diode chips 1 does not protrude to the other light emitting diode chip 1 and It is possible to prevent the two light emitting diode chips 1 from being electrically short-circuited.

【0031】(実施形態5)本実施形態は、図8及び図
9に示すように基板2の裏面全体に平板状の金属部材8
が配設され、金属部材8の表面(図8における上面)に
嵌合凹部8aが凹設されるとともに、基板2裏面におけ
る収納凹所3と背向する位置に後方(図8における下
方)へ突出して嵌合凹部8aに凹凸嵌合する嵌合凸部2
dが突設されている点に特徴がある。但し、その他の構
成については実施形態1と共通であるから、共通の構成
要素については図示並びに説明を省略する。
(Embodiment 5) In this embodiment, as shown in FIGS. 8 and 9, a flat metal member 8 is formed on the entire back surface of the substrate 2.
And a fitting recess 8a is provided on the front surface (upper surface in FIG. 8) of the metal member 8 and backward (downward in FIG. 8) at a position facing the housing recess 3 on the back surface of the substrate 2. Fitting projection 2 that projects and fits into fitting recess 8a
It is characterized in that d is projected. However, since other configurations are common to those of the first embodiment, illustration and description of common components are omitted.

【0032】図9に示すように、基板2の嵌合凸部2d
は金属部材8の嵌合凹部8aに対して幅寸法(図9にお
ける左右の幅寸法)が若干大きく設定されている。ここ
で、本実施形態における基板2と金属部材8との固定方
法について説明する。まず、基板2と金属部材8を高温
雰囲気中に放置すると、金属部材8の方がセラミック製
の基板2に比較して熱膨張率が大きいため、図10に示
すように金属部材8の嵌合凹部8aの幅寸法が基板2の
嵌合凸部2dの幅寸法よりも大きくなる。そして、この
状態で基板2の嵌合凸部2dを金属部材8の嵌合凹所8
a内に挿入し、さらに雰囲気温度を高温から常温に戻せ
ば、基板2並びに金属部材8が収縮して嵌合凸部2dと
嵌合凹部8aとが嵌合して基板2と金属部材8を強固に
固定することができる(図8参照)。なお、発光ダイオ
ードチップ1への熱的ストレスが加わることを防止する
ため、基板2と金属部材8を上述の手順で固定した後に
基板2の収納凹所3底面に発光ダイオードチップ1を実
装することが望ましい。
As shown in FIG. 9, the fitting protrusion 2d of the substrate 2
The width dimension (width dimension on the left and right in FIG. 9) of the fitting recess 8a of the metal member 8 is set to be slightly larger. Here, a method of fixing the substrate 2 and the metal member 8 in this embodiment will be described. First, when the substrate 2 and the metal member 8 are left in a high temperature atmosphere, the metal member 8 has a larger coefficient of thermal expansion than the ceramic substrate 2, so that the metal member 8 is fitted as shown in FIG. The width dimension of the concave portion 8a becomes larger than the width dimension of the fitting convex portion 2d of the substrate 2. Then, in this state, the fitting convex portion 2d of the substrate 2 is inserted into the fitting concave portion 8 of the metal member 8.
When the substrate 2 and the metal member 8 are inserted into the inside a and the ambient temperature is returned from the high temperature to the normal temperature, the board 2 and the metal member 8 contract, the fitting convex portion 2d and the fitting concave portion 8a are fitted, and the board 2 and the metal member 8 are joined. It can be firmly fixed (see FIG. 8). In order to prevent thermal stress from being applied to the light emitting diode chip 1, the light emitting diode chip 1 should be mounted on the bottom surface of the housing recess 3 of the substrate 2 after fixing the substrate 2 and the metal member 8 in the above procedure. Is desirable.

【0033】このように本実施形態では、基板2と金属
部材8を接着剤を使わずに強固に固定することができ、
結果的に材料費のコストダウンが図れるという利点があ
る。そして、基板2の裏面に固定された金属部材8を通
して発光ダイオードチップ1の発する熱を効率的に放熱
することができるものである。
As described above, in this embodiment, the substrate 2 and the metal member 8 can be firmly fixed without using an adhesive,
As a result, there is an advantage that the material cost can be reduced. The heat generated by the light emitting diode chip 1 can be efficiently dissipated through the metal member 8 fixed to the back surface of the substrate 2.

【0034】なお、本実施形態では基板2に嵌合凸部2
d、金属部材8に嵌合凹部8aを設けているが、図11
〜図13に示すように基板2裏面の収納凹所3底面と背
向する位置に嵌合凹部2eを設け、嵌合凹部2eと凹凸
嵌合する嵌合凸部8bを金属部材8の表面に設けてもよ
い。この場合にも金属部材8の嵌合凸部8bを基板2の
嵌合凹部2eに対して幅寸法(図11における左右の幅
寸法)を若干大きく設定し、上述とは逆に低温雰囲気中
で収縮させた嵌合凸部8bを嵌合凹部2eに挿入した後
に常温に戻すことで嵌合凹部2eと嵌合凸部8bを凹凸
嵌合させて基板2と金属部材8を強固に固定することが
できる。
In this embodiment, the board 2 is fitted with the fitting protrusions 2.
d, the fitting recess 8a is provided in the metal member 8.
As shown in FIG. 13, a fitting concave portion 2e is provided on the back surface of the substrate 2 at a position facing the bottom of the housing concave portion 3 and a fitting convex portion 8b for fitting the concave concave portion 2e on the surface of the metal member 8. It may be provided. Also in this case, the fitting convex portion 8b of the metal member 8 is set to have a slightly larger width dimension (left and right width dimension in FIG. 11) than the fitting concave portion 2e of the substrate 2, and contrary to the above, in a low temperature atmosphere. Inserting the contracted fitting convex portion 8b into the fitting concave portion 2e and then returning the temperature to room temperature so that the fitting concave portion 2e and the fitting convex portion 8b are concave-convex fitted to firmly fix the substrate 2 and the metal member 8 to each other. You can

【0035】(実施形態6)本実施形態は、図14に示
すように金属基板11aの表面にセラミックコーティン
グによりセラミック層11bが形成された基板11を備
える点に特徴がある。
(Embodiment 6) This embodiment is characterized in that a substrate 11 having a ceramic layer 11b formed by ceramic coating on the surface of a metal substrate 11a is provided as shown in FIG.

【0036】基板11の表面(図14における上面)に
は1乃至複数の円柱状の突台12が前方(図14におけ
る上方)へ向けて突設されており、この突台12の前面
に平面視略円形に開口するすり鉢状の収納凹所13が形
成されている。実施形態1と同様に収納凹所13の底面
は平坦面となっており、この平坦な底面に発光ダイオー
ドチップ1がフェースダウン実装される。また、収納凹
所13の内周面及び中心部を除く底面を含めた基板11
の表面(セラミック層11bの表面)には銅箔よりなる
配線部(配線パターン)4が形成されている。そして、
発光ダイオードチップ1の各電極部5a,5bが配線部
4と電気的に接続されている。
On the surface of the substrate 11 (the upper surface in FIG. 14), one or a plurality of columnar protrusions 12 are provided so as to project forward (upward in FIG. 14), and the front face of the protrusion 12 is flat. A mortar-shaped storage recess 13 that opens in a substantially circular shape is formed. Similar to the first embodiment, the bottom surface of the storage recess 13 is a flat surface, and the light emitting diode chip 1 is mounted face down on the flat bottom surface. In addition, the substrate 11 including the inner peripheral surface of the storage recess 13 and the bottom surface excluding the central portion
A wiring portion (wiring pattern) 4 made of copper foil is formed on the surface (surface of the ceramic layer 11b). And
The electrode portions 5a and 5b of the light emitting diode chip 1 are electrically connected to the wiring portion 4.

【0037】而して、本実施形態では、表面をセラミッ
ク層11bで覆うことによって金属基板11aと発光ダ
イオードチップ1とを絶縁するとともに、発光ダイオー
ドチップ1の発する熱を熱伝導度の高い金属基板11を
通して外部に効率よく放熱することができる。しかも、
収納凹所13の内周面もセラミック層11bで覆われて
いるから、発光ダイオードチップ1の発する光をセラミ
ック層11bで反射して効率よく前方へ放射することが
できるとともに金属基板11aの経年劣化を抑制するこ
とができる。また、発光ダイオードチップ1の発する光
がセラミック層11bを透過した場合においても、金属
基板11aをアルミ等の反射率が高い金属で形成してい
れば金属基板11aの表面で光を効率よく反射して反射
性能の低下を防ぐことができる。
Thus, in this embodiment, the surface of the light emitting diode chip 1 is insulated from the light emitting diode chip 1 by covering the surface with the ceramic layer 11b, and the heat generated by the light emitting diode chip 1 has a high thermal conductivity. Heat can be efficiently radiated to the outside through 11. Moreover,
Since the inner peripheral surface of the storage recess 13 is also covered with the ceramic layer 11b, the light emitted from the light emitting diode chip 1 can be reflected by the ceramic layer 11b to be efficiently radiated forward and the metal substrate 11a can be aged. Can be suppressed. Even when the light emitted from the light emitting diode chip 1 is transmitted through the ceramic layer 11b, if the metal substrate 11a is made of a metal having a high reflectance, such as aluminum, the light is efficiently reflected on the surface of the metal substrate 11a. It is possible to prevent the reflection performance from deteriorating.

【0038】[0038]

【発明の効果】請求項1の発明は、前面に開口する1乃
至複数の収納凹所が表面に形成されたセラミック製の基
板と、前記収納凹所の底面に実装される発光ダイオード
チップと、前記基板の裏面に配置される放熱手段とを備
えたので、発光ダイオードチップの発する光は収納凹所
の内周面に反射されて前方へ効率よく放射され、また、
収納凹所が形成される基板がセラミック製であるから発
光ダイオードチップの発する熱や光による経年劣化を抑
制することができ、しかも、基板の裏面に放熱手段を配
置することで放熱性の向上が図れるという効果がある。
According to the first aspect of the present invention, there is provided a ceramic substrate on the surface of which one or a plurality of storage recesses that are open to the front are formed, and a light emitting diode chip mounted on the bottom of the storage recess. Since the heat radiation means arranged on the back surface of the substrate is provided, the light emitted from the light emitting diode chip is reflected by the inner peripheral surface of the storage recess and efficiently radiated forward, and
Since the substrate in which the storage recess is formed is made of ceramic, it is possible to suppress aged deterioration due to heat or light emitted from the light emitting diode chip, and moreover, by disposing the heat dissipation means on the back surface of the substrate, the heat dissipation is improved. There is an effect that it can be achieved.

【0039】請求項2の発明は、請求項1の発明におい
て、前記放熱手段は、セラミック製の放熱フィンからな
るので、放熱フィンにより基板の裏面の表面積を増大さ
せて放熱性の向上が図れるという効果がある。
According to a second aspect of the present invention, in the first aspect of the present invention, since the heat radiating means is composed of a ceramic heat radiating fin, the heat radiating fin can increase the surface area of the back surface of the substrate to improve the heat radiating property. effective.

【0040】請求項3の発明は、請求項1の発明におい
て、前記放熱手段は、金属部材からなるので、一般的に
セラミックよりも金属の方が熱伝導率が高いから、基板
の裏面に金属部材を設けることで放熱性の向上が図れる
という効果がある。
According to a third aspect of the present invention, in the first aspect of the present invention, the heat dissipation means is made of a metal member. Therefore, generally, the heat conductivity of metal is higher than that of ceramic. By providing the member, there is an effect that the heat dissipation can be improved.

【0041】請求項4の発明は、請求項1又は2又は3
の発明において、前記基板の収納凹所底面に発光ダイオ
ードチップに当接する突起を設けたので、発光ダイオー
ドチップと基板の接触面積が増えて熱抵抗を減少させる
ことができ、発光ダイオードチップの発する熱を効率よ
く基板に伝導させて放熱性がさらに向上するという効果
がある。
The invention of claim 4 relates to claim 1 or 2 or 3.
In the invention of claim 1, since the protrusion that abuts the light emitting diode chip is provided on the bottom surface of the recess of the substrate, the contact area between the light emitting diode chip and the substrate can be increased to reduce the thermal resistance, and the heat generated by the light emitting diode chip can be reduced. Is effectively conducted to the substrate to further improve the heat dissipation.

【0042】請求項5の発明は、請求項1〜4の何れか
の発明において、前記基板の熱膨張率を発光ダイオード
チップを形成する基板の熱膨張率と略同一にしたので、
発光ダイオードチップと基板との間で急激な温度変化が
生じた場合においても発光ダイオードチップの電極部分
に応力が発生し難くなり、発光ダイオードチップに亀裂
や破損等が生じるのを防いで信頼性の向上が図れるとい
う効果がある。
According to the invention of claim 5, in any one of claims 1 to 4, the coefficient of thermal expansion of the substrate is substantially the same as the coefficient of thermal expansion of the substrate forming the light emitting diode chip.
Even when a sudden temperature change occurs between the light emitting diode chip and the substrate, stress is less likely to occur in the electrode part of the light emitting diode chip, and cracks and damages are prevented from occurring in the light emitting diode chip to ensure reliability. There is an effect that it can be improved.

【0043】請求項6の発明は、請求項3の発明におい
て、前記基板の裏面と金属部材の表面とに凹凸嵌合する
嵌合部をそれぞれ設けたので、基板と金属部材を接着剤
を使わずに強固に固定することができ、結果的に材料費
のコストダウンが図れるという効果がある。
According to a sixth aspect of the present invention, in the third aspect of the present invention, the back surface of the substrate and the front surface of the metal member are provided with fitting portions that are fitted to each other by projections and recesses. It is possible to firmly fix it without having to do so, and as a result, it is possible to reduce the material cost.

【0044】請求項7の発明は、上記目的を達成するた
めに、前面に開口する1乃至複数の収納凹所が表面に形
成される金属部材の少なくとも当該表面をセラミックコ
ーティングしてなる基板と、前記収納凹所の底面に実装
される発光ダイオードチップとを備えたので、発光ダイ
オードチップの発する光は収納凹所の内周面に反射され
て前方へ効率よく放射され、また、収納凹所が形成され
る基板の表面がセラミックコーティングされているから
発光ダイオードチップの発する熱や光による経年劣化を
抑制することができ、さらに、基板が金属部材で形成さ
れていることから放熱性の向上が図れるという効果があ
る。
In order to achieve the above-mentioned object, the invention of claim 7 is a substrate formed by coating at least the surface of a metal member having a front surface with one or a plurality of storage recesses formed therein, and a ceramic coating. Since the light emitting diode chip mounted on the bottom surface of the storage recess is provided, the light emitted from the light emitting diode chip is reflected by the inner peripheral surface of the storage recess and efficiently radiated forward, and the storage recess is Since the surface of the substrate to be formed is ceramic-coated, it is possible to suppress aged deterioration due to heat and light emitted from the light emitting diode chip, and further, because the substrate is made of a metal member, heat dissipation can be improved. There is an effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施形態1の要部を示す断面図である。FIG. 1 is a cross-sectional view showing a main part of a first embodiment.

【図2】同上の他の構成の要部を示す断面図である。FIG. 2 is a cross-sectional view showing a main part of another configuration of the above.

【図3】同上のさらに他の構成の要部を示す断面図であ
る。
FIG. 3 is a sectional view showing a main part of still another configuration of the above.

【図4】同上のさらにまた他の構成の要部を示す断面図
である。
FIG. 4 is a sectional view showing a main part of still another configuration of the above.

【図5】実施形態2の要部を示す断面図であるFIG. 5 is a sectional view showing a main part of the second embodiment.

【図6】実施形態3の要部を示す断面図であるFIG. 6 is a cross-sectional view showing the main parts of the third embodiment.

【図7】実施形態4の要部を示す断面図である。FIG. 7 is a sectional view showing a main part of the fourth embodiment.

【図8】実施形態5の要部を示す断面図である。FIG. 8 is a cross-sectional view showing the main parts of the fifth embodiment.

【図9】同上における基板と金属部材の固定方法を説明
するための説明図である。
FIG. 9 is an explanatory diagram for explaining a method of fixing the substrate and the metal member in the above.

【図10】同上における基板と金属部材の固定方法を説
明するための説明図である。
FIG. 10 is an explanatory diagram for explaining a method of fixing the substrate and the metal member in the above.

【図11】同上の他の構成の要部を示す断面図である。FIG. 11 is a cross-sectional view showing a main part of another configuration of the above.

【図12】同上における基板と金属部材の固定方法を説
明するための説明図である。
FIG. 12 is an explanatory diagram for explaining a method of fixing the substrate and the metal member in the above.

【図13】同上における基板と金属部材の固定方法を説
明するための説明図である。
FIG. 13 is an explanatory diagram for explaining a method of fixing the substrate and the metal member in the above.

【図14】実施形態6の要部を示す断面図である。FIG. 14 is a cross-sectional view showing the main parts of the sixth embodiment.

【図15】従来例の要部を示す断面図である。FIG. 15 is a cross-sectional view showing a main part of a conventional example.

【符号の説明】[Explanation of symbols]

1 発光ダイオードチップ 2 基板 3 収納凹所 4 配線部 6 放熱フィン 1 Light emitting diode chip 2 substrates 3 storage recess 4 wiring section 6 radiating fins

───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 塩濱 英二 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 木村 秀吉 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 内野々 良幸 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工株 式会社内 Fターム(参考) 5F041 AA33 AA44 DA04 DA09 DA20   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Masaru Sugimoto             1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd.             Inside the company (72) Inventor Eiji Shiohama             1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd.             Inside the company (72) Inventor Hideyoshi Kimura             1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd.             Inside the company (72) Inventor Yoshiyuki Uchino             1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd.             Inside the company (72) Inventor Toshiyuki Suzuki             1048, Kadoma, Kadoma-shi, Osaka Matsushita Electric Works Co., Ltd.             Inside the company F-term (reference) 5F041 AA33 AA44 DA04 DA09 DA20

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 前面に開口する1乃至複数の収納凹所が
表面に形成されたセラミック製の基板と、前記収納凹所
の底面に実装される発光ダイオードチップと、前記基板
の裏面に配置される放熱手段とを備えたことを特徴とす
る発光装置。
1. A ceramic substrate having one or a plurality of storage recesses formed on the front surface formed on the surface, a light emitting diode chip mounted on the bottom of the storage recess, and a rear surface of the substrate. A light emitting device, comprising:
【請求項2】 前記放熱手段は、セラミック製の放熱フ
ィンからなることを特徴とする請求項1記載の発光装
置。
2. The light emitting device according to claim 1, wherein the heat dissipation means is composed of a heat dissipation fin made of ceramic.
【請求項3】 前記放熱手段は、金属部材からなること
を特徴とする請求項1記載の発光装置。
3. The light emitting device according to claim 1, wherein the heat dissipation means is made of a metal member.
【請求項4】 前記基板の収納凹所底面に発光ダイオー
ドチップに当接する突起を設けたことを特徴とする請求
項1又は2又は3記載の発光装置。
4. The light emitting device according to claim 1, wherein a protrusion for contacting a light emitting diode chip is provided on a bottom surface of the recess of the substrate.
【請求項5】 前記基板の熱膨張率を発光ダイオードチ
ップを形成する基板の熱膨張率と略同一にしたことを特
徴とする請求項1〜4の何れかに記載の発光装置。
5. The light emitting device according to claim 1, wherein the coefficient of thermal expansion of the substrate is substantially the same as the coefficient of thermal expansion of a substrate on which a light emitting diode chip is formed.
【請求項6】 前記基板の裏面と金属部材の表面とに凹
凸嵌合する嵌合部をそれぞれ設けたことを特徴とする請
求項3記載の発光装置。
6. The light emitting device according to claim 3, wherein fitting portions for fitting concave and convex are provided on the back surface of the substrate and the front surface of the metal member, respectively.
【請求項7】 前面に開口する1乃至複数の収納凹所が
表面に形成される金属部材の少なくとも当該表面をセラ
ミックコーティングしてなる基板と、前記収納凹所の底
面に実装される発光ダイオードチップとを備えたことを
特徴とする発光装置。
7. A substrate formed by ceramic-coating at least the surface of a metal member having one or a plurality of storage recesses formed on the front surface, and a light emitting diode chip mounted on the bottom surface of the storage recess. And a light-emitting device.
JP2002037291A 2002-02-14 2002-02-14 Light emitting device Pending JP2003243718A (en)

Priority Applications (1)

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Family

ID=27778936

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Country Link
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