JP2003243608A - 電力用モジュール - Google Patents

電力用モジュール

Info

Publication number
JP2003243608A
JP2003243608A JP2002038145A JP2002038145A JP2003243608A JP 2003243608 A JP2003243608 A JP 2003243608A JP 2002038145 A JP2002038145 A JP 2002038145A JP 2002038145 A JP2002038145 A JP 2002038145A JP 2003243608 A JP2003243608 A JP 2003243608A
Authority
JP
Japan
Prior art keywords
plate
external terminal
power semiconductor
shaped conductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002038145A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003243608A5 (https=
Inventor
Noriyoshi Arai
規由 新井
Makoto Kondo
信 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002038145A priority Critical patent/JP2003243608A/ja
Publication of JP2003243608A publication Critical patent/JP2003243608A/ja
Publication of JP2003243608A5 publication Critical patent/JP2003243608A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Inverter Devices (AREA)
JP2002038145A 2002-02-15 2002-02-15 電力用モジュール Pending JP2003243608A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002038145A JP2003243608A (ja) 2002-02-15 2002-02-15 電力用モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002038145A JP2003243608A (ja) 2002-02-15 2002-02-15 電力用モジュール

Publications (2)

Publication Number Publication Date
JP2003243608A true JP2003243608A (ja) 2003-08-29
JP2003243608A5 JP2003243608A5 (https=) 2005-05-19

Family

ID=27779535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002038145A Pending JP2003243608A (ja) 2002-02-15 2002-02-15 電力用モジュール

Country Status (1)

Country Link
JP (1) JP2003243608A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2879021A1 (fr) * 2004-01-07 2006-06-09 Mitsubishi Electric Corp Dispositif a semiconducteur de puissance
JP2008021796A (ja) * 2006-07-12 2008-01-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2012099794A (ja) * 2010-09-08 2012-05-24 Vincotech Holdings Sarl 焼結金属接合、好ましくは焼結銀接合を有するパワー半導体モジュールおよびその製造方法
WO2013021726A1 (ja) * 2011-08-10 2013-02-14 富士電機株式会社 半導体装置および半導体装置の製造方法
US10879782B2 (en) 2016-08-05 2020-12-29 Denso Corporation Semiconductor device having switching element suppressing potential variation

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2879021A1 (fr) * 2004-01-07 2006-06-09 Mitsubishi Electric Corp Dispositif a semiconducteur de puissance
CN100435333C (zh) * 2004-01-07 2008-11-19 三菱电机株式会社 电力半导体装置
US7535076B2 (en) 2004-01-07 2009-05-19 Alstom Transport Sa Power semiconductor device
US7859079B2 (en) 2004-01-07 2010-12-28 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device
JP2008021796A (ja) * 2006-07-12 2008-01-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2012099794A (ja) * 2010-09-08 2012-05-24 Vincotech Holdings Sarl 焼結金属接合、好ましくは焼結銀接合を有するパワー半導体モジュールおよびその製造方法
WO2013021726A1 (ja) * 2011-08-10 2013-02-14 富士電機株式会社 半導体装置および半導体装置の製造方法
CN103534796A (zh) * 2011-08-10 2014-01-22 富士电机株式会社 半导体装置和半导体装置的制造方法
JPWO2013021726A1 (ja) * 2011-08-10 2015-03-05 富士電機株式会社 半導体装置および半導体装置の製造方法
US9076782B2 (en) 2011-08-10 2015-07-07 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing same
CN103534796B (zh) * 2011-08-10 2016-06-01 富士电机株式会社 半导体装置和半导体装置的制造方法
US10879782B2 (en) 2016-08-05 2020-12-29 Denso Corporation Semiconductor device having switching element suppressing potential variation

Similar Documents

Publication Publication Date Title
JP7650635B2 (ja) 電気自動車またはハイブリッド自動車の、パワーエレクトロニクスのトラクションインバータのハーフブリッジモジュール
US6836006B2 (en) Semiconductor module
CN104040715B (zh) 半导体器件
JP7139881B2 (ja) 半導体装置
JP4138612B2 (ja) 電力用半導体装置
WO2013172291A1 (ja) パワーモジュール半導体装置
JP4885046B2 (ja) 電力用半導体モジュール
CN110600457B (zh) 半导体装置
US10978381B2 (en) Semiconductor device
CN1136649C (zh) 电力组件
US20200203252A1 (en) Semiconductor device and method of manufacturing the same
JP4061551B2 (ja) 半導体装置
JP2004040900A (ja) 半導体モジュール及び電力変換装置
KR101776425B1 (ko) 파워 모듈
JP7077893B2 (ja) 半導体装置
US20250069967A1 (en) Semiconductor device
JP2003243608A (ja) 電力用モジュール
KR100983959B1 (ko) 반도체 장치
JPH11177021A (ja) 半導体スイッチの電極構造
EP3770962A1 (en) Semiconductor module arrangement
CN117438412A (zh) 半导体模块
JP3525823B2 (ja) 相補型ｉｇｂｔの実装構造
JP7139799B2 (ja) 半導体装置
JP2022130754A (ja) 半導体装置
CN121442757A (zh) 半导体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040707

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040707

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060801

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060927

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061107