JP2003243492A - ウエハ処理装置とウエハステージ及びウエハ処理方法 - Google Patents

ウエハ処理装置とウエハステージ及びウエハ処理方法

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Publication number
JP2003243492A
JP2003243492A JP2003041373A JP2003041373A JP2003243492A JP 2003243492 A JP2003243492 A JP 2003243492A JP 2003041373 A JP2003041373 A JP 2003041373A JP 2003041373 A JP2003041373 A JP 2003041373A JP 2003243492 A JP2003243492 A JP 2003243492A
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JP
Japan
Prior art keywords
wafer
wafer stage
stage
processing apparatus
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003041373A
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English (en)
Japanese (ja)
Other versions
JP2003243492A5 (enrdf_load_stackoverflow
Inventor
Seiichiro Sugano
誠一郎 菅野
Hironori Kawahara
博宣 川原
Mitsuru Suehiro
満 末広
Saburo Kanai
三郎 金井
Toshio Masuda
俊夫 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2003041373A priority Critical patent/JP2003243492A/ja
Publication of JP2003243492A publication Critical patent/JP2003243492A/ja
Publication of JP2003243492A5 publication Critical patent/JP2003243492A5/ja
Withdrawn legal-status Critical Current

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Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2003041373A 2003-02-19 2003-02-19 ウエハ処理装置とウエハステージ及びウエハ処理方法 Withdrawn JP2003243492A (ja)

Priority Applications (1)

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JP2003041373A JP2003243492A (ja) 2003-02-19 2003-02-19 ウエハ処理装置とウエハステージ及びウエハ処理方法

Applications Claiming Priority (1)

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JP2003041373A JP2003243492A (ja) 2003-02-19 2003-02-19 ウエハ処理装置とウエハステージ及びウエハ処理方法

Related Parent Applications (1)

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JP2002040373A Division JP2003243490A (ja) 2002-02-18 2002-02-18 ウエハ処理装置とウエハステージ及びウエハ処理方法

Publications (2)

Publication Number Publication Date
JP2003243492A true JP2003243492A (ja) 2003-08-29
JP2003243492A5 JP2003243492A5 (enrdf_load_stackoverflow) 2005-08-18

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Country Status (1)

Country Link
JP (1) JP2003243492A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243888A (ja) * 2004-02-26 2005-09-08 Nitto Denko Corp 粘着シート貼付け方法およびこれを用いた装置
JP2005345406A (ja) * 2004-06-07 2005-12-15 Micronics Japan Co Ltd 検査装置
JP2007116098A (ja) * 2005-10-20 2007-05-10 Applied Materials Inc 均一な温度分布を有する、冷却された／加熱されたウェハ支持体を有する容量結合プラズマリアクタ
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
JP2010027860A (ja) * 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
US7988872B2 (en) 2005-10-11 2011-08-02 Applied Materials, Inc. Method of operating a capacitively coupled plasma reactor with dual temperature control loops
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8157951B2 (en) 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
CN102870503A (zh) * 2010-06-11 2013-01-09 应用材料公司 具有区域依赖性热效率的温度受控等离子体处理腔室部件
JP2013511847A (ja) * 2009-11-20 2013-04-04 アプライド マテリアルズ インコーポレイテッド アーク放電を低減させた静電チャック
JP2014150104A (ja) * 2013-01-31 2014-08-21 Tokyo Electron Ltd 載置台及びプラズマ処理装置
JP2016040800A (ja) * 2014-08-12 2016-03-24 アズビル株式会社 プラズマエッチング装置
KR101758347B1 (ko) 2016-08-01 2017-07-18 주식회사 엘케이엔지니어링 정전 척 및 리페어 방법
JP2019083331A (ja) * 2013-05-07 2019-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック
JP2022500846A (ja) * 2018-09-14 2022-01-04 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. 静電チャック
KR20220024735A (ko) * 2019-09-17 2022-03-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 서셉터 커버, 반도체 장치의 제조 방법 및 기판 처리 방법
JP2023513002A (ja) * 2020-01-29 2023-03-30 ラム リサーチ コーポレーション 温度調整空洞特徴部を有するウエハチャック
CN118858906A (zh) * 2024-09-26 2024-10-29 山东强茂电子科技有限公司 一种带有温控载台的晶圆点测机
JP7644867B1 (ja) * 2024-09-13 2025-03-12 日本特殊陶業株式会社 保持装置
JPWO2025057308A1 (enrdf_load_stackoverflow) * 2023-09-12 2025-03-20

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243888A (ja) * 2004-02-26 2005-09-08 Nitto Denko Corp 粘着シート貼付け方法およびこれを用いた装置
JP2005345406A (ja) * 2004-06-07 2005-12-15 Micronics Japan Co Ltd 検査装置
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8801893B2 (en) 2005-10-11 2014-08-12 Be Aerospace, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8337660B2 (en) 2005-10-11 2012-12-25 B/E Aerospace, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US7988872B2 (en) 2005-10-11 2011-08-02 Applied Materials, Inc. Method of operating a capacitively coupled plasma reactor with dual temperature control loops
US8157951B2 (en) 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8092638B2 (en) 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8608900B2 (en) 2005-10-20 2013-12-17 B/E Aerospace, Inc. Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
US8546267B2 (en) 2005-10-20 2013-10-01 B/E Aerospace, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
US8092639B2 (en) 2005-10-20 2012-01-10 Advanced Thermal Sciences Corporation Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
US8012304B2 (en) 2005-10-20 2011-09-06 Applied Materials, Inc. Plasma reactor with a multiple zone thermal control feed forward control apparatus
US8221580B2 (en) 2005-10-20 2012-07-17 Applied Materials, Inc. Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops
US8329586B2 (en) 2005-10-20 2012-12-11 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using feed forward thermal control
US8021521B2 (en) 2005-10-20 2011-09-20 Applied Materials, Inc. Method for agile workpiece temperature control in a plasma reactor using a thermal model
JP2007116098A (ja) * 2005-10-20 2007-05-10 Applied Materials Inc 均一な温度分布を有する、冷却された／加熱されたウェハ支持体を有する容量結合プラズマリアクタ
US8980044B2 (en) 2005-10-20 2015-03-17 Be Aerospace, Inc. Plasma reactor with a multiple zone thermal control feed forward control apparatus
JP2008103403A (ja) * 2006-10-17 2008-05-01 Tokyo Electron Ltd 基板載置台及びプラズマ処理装置
JP2010027860A (ja) * 2008-07-18 2010-02-04 Tokyo Electron Ltd フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP2013511847A (ja) * 2009-11-20 2013-04-04 アプライド マテリアルズ インコーポレイテッド アーク放電を低減させた静電チャック
US8608852B2 (en) * 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
CN102870503A (zh) * 2010-06-11 2013-01-09 应用材料公司 具有区域依赖性热效率的温度受控等离子体处理腔室部件
TWI456638B (zh) * 2010-06-11 2014-10-11 Applied Materials Inc 具有區域依賴性熱效率之溫度受控電漿製程腔室部件
JP2014150104A (ja) * 2013-01-31 2014-08-21 Tokyo Electron Ltd 載置台及びプラズマ処理装置
JP2019083331A (ja) * 2013-05-07 2019-05-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック
JP2016040800A (ja) * 2014-08-12 2016-03-24 アズビル株式会社 プラズマエッチング装置
KR101758347B1 (ko) 2016-08-01 2017-07-18 주식회사 엘케이엔지니어링 정전 척 및 리페어 방법
JP2022500846A (ja) * 2018-09-14 2022-01-04 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. 静電チャック
JP7198915B2 (ja) 2018-09-14 2023-01-04 北京北方華創微電子装備有限公司 静電チャック
KR20220024735A (ko) * 2019-09-17 2022-03-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 서셉터 커버, 반도체 장치의 제조 방법 및 기판 처리 방법
KR102736653B1 (ko) 2019-09-17 2024-11-29 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기판 처리 방법
JP2023513002A (ja) * 2020-01-29 2023-03-30 ラム リサーチ コーポレーション 温度調整空洞特徴部を有するウエハチャック
JPWO2025057308A1 (enrdf_load_stackoverflow) * 2023-09-12 2025-03-20
WO2025057308A1 (ja) * 2023-09-12 2025-03-20 日本碍子株式会社 ウエハ載置台
JP7644867B1 (ja) * 2024-09-13 2025-03-12 日本特殊陶業株式会社 保持装置
CN118858906A (zh) * 2024-09-26 2024-10-29 山东强茂电子科技有限公司 一种带有温控载台的晶圆点测机

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