JP2003229543A - 磁気記憶装置 - Google Patents

磁気記憶装置

Info

Publication number
JP2003229543A
JP2003229543A JP2002026909A JP2002026909A JP2003229543A JP 2003229543 A JP2003229543 A JP 2003229543A JP 2002026909 A JP2002026909 A JP 2002026909A JP 2002026909 A JP2002026909 A JP 2002026909A JP 2003229543 A JP2003229543 A JP 2003229543A
Authority
JP
Japan
Prior art keywords
layer
tunnel magnetoresistive
wiring
magnetoresistive effect
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002026909A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229543A5 (enExample
Inventor
Takashi Osanaga
隆志 長永
Takeharu Kuroiwa
丈晴 黒岩
Yutaka Takada
裕 高田
Koichiro Inomata
浩一郎 猪俣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002026909A priority Critical patent/JP2003229543A/ja
Publication of JP2003229543A publication Critical patent/JP2003229543A/ja
Publication of JP2003229543A5 publication Critical patent/JP2003229543A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002026909A 2002-02-04 2002-02-04 磁気記憶装置 Pending JP2003229543A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002026909A JP2003229543A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002026909A JP2003229543A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Publications (2)

Publication Number Publication Date
JP2003229543A true JP2003229543A (ja) 2003-08-15
JP2003229543A5 JP2003229543A5 (enExample) 2005-08-04

Family

ID=27748594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002026909A Pending JP2003229543A (ja) 2002-02-04 2002-02-04 磁気記憶装置

Country Status (1)

Country Link
JP (1) JP2003229543A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004133957A (ja) * 2002-10-08 2004-04-30 Sony Corp 強磁性トンネル接合素子を用いた磁気記憶装置
CN103378073A (zh) * 2012-04-12 2013-10-30 旺宏电子股份有限公司 半导体结构及其制造方法
EP3621077A1 (en) * 2014-08-20 2020-03-11 Everspin Technologies, Inc. Redundant magnetic tunnel junctions in magnetoresistive memory
CN113167842A (zh) * 2019-01-17 2021-07-23 桑迪士克科技有限责任公司 压控层间交换耦合磁阻存储器设备及其操作方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004133957A (ja) * 2002-10-08 2004-04-30 Sony Corp 強磁性トンネル接合素子を用いた磁気記憶装置
US7542335B2 (en) 2002-10-08 2009-06-02 Sony Corporation Magnetic storage device using ferromagnetic tunnel junction element
CN103378073A (zh) * 2012-04-12 2013-10-30 旺宏电子股份有限公司 半导体结构及其制造方法
EP3621077A1 (en) * 2014-08-20 2020-03-11 Everspin Technologies, Inc. Redundant magnetic tunnel junctions in magnetoresistive memory
CN113167842A (zh) * 2019-01-17 2021-07-23 桑迪士克科技有限责任公司 压控层间交换耦合磁阻存储器设备及其操作方法
CN113167842B (zh) * 2019-01-17 2024-03-01 桑迪士克科技有限责任公司 压控层间交换耦合磁阻存储器设备及其操作方法

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