JP2003229372A - 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法 - Google Patents

半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法

Info

Publication number
JP2003229372A
JP2003229372A JP2002360555A JP2002360555A JP2003229372A JP 2003229372 A JP2003229372 A JP 2003229372A JP 2002360555 A JP2002360555 A JP 2002360555A JP 2002360555 A JP2002360555 A JP 2002360555A JP 2003229372 A JP2003229372 A JP 2003229372A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor layer
semiconductor
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002360555A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229372A5 (enrdf_load_stackoverflow
Inventor
Yoshiteru Hasegawa
義晃 長谷川
Akihiko Ishibashi
明彦 石橋
Nobuyuki Kamimura
信行 上村
Yuzaburo Ban
雄三郎 伴
Masahiro Kume
雅博 粂
Yoshihiro Hara
義博 原
Isao Kidoguchi
勲 木戸口
Ayumi Tsujimura
歩 辻村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2002360555A priority Critical patent/JP2003229372A/ja
Publication of JP2003229372A publication Critical patent/JP2003229372A/ja
Publication of JP2003229372A5 publication Critical patent/JP2003229372A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2002360555A 1997-06-16 2002-12-12 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法 Pending JP2003229372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002360555A JP2003229372A (ja) 1997-06-16 2002-12-12 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15836597 1997-06-16
JP9-158365 1997-06-16
JP2002360555A JP2003229372A (ja) 1997-06-16 2002-12-12 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP16380698A Division JP3681540B2 (ja) 1997-06-16 1998-06-11 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JP2003229372A true JP2003229372A (ja) 2003-08-15
JP2003229372A5 JP2003229372A5 (enrdf_load_stackoverflow) 2008-09-04

Family

ID=27758932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002360555A Pending JP2003229372A (ja) 1997-06-16 2002-12-12 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JP2003229372A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287637A (ja) * 2009-06-10 2010-12-24 Sony Corp 半導体発光装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287637A (ja) * 2009-06-10 2010-12-24 Sony Corp 半導体発光装置の製造方法

Similar Documents

Publication Publication Date Title
US6030849A (en) Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
JP3160914B2 (ja) 窒化ガリウム系化合物半導体レーザダイオード
JP3822318B2 (ja) 半導体発光素子及びその製造方法
US6380051B1 (en) Layered structure including a nitride compound semiconductor film and method for making the same
JP3448450B2 (ja) 発光素子およびその製造方法
JP3864735B2 (ja) 半導体発光素子およびその製造方法
US20100133506A1 (en) Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
JP2003152220A (ja) 半導体発光素子の製造方法および半導体発光素子
JP2001135892A (ja) 窒化物半導体発光装置
JPH10321962A (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
JPH07263748A (ja) 3族窒化物半導体発光素子及びその製造方法
JP3836245B2 (ja) 窒化ガリウム系化合物半導体素子
JPH11177135A (ja) 窒化ガリウム系半導体素子およびその製造方法
JP2002246646A (ja) 半導体素子およびその製造方法ならびに半導体基板の製造方法
JP3883827B2 (ja) 窒化物系半導体素子および窒化物系半導体の形成方法
JP3681540B2 (ja) 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法
JP3546634B2 (ja) 窒化物系化合物半導体の選択エッチング方法および半導体装置の製造方法
JP3403665B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP4200115B2 (ja) カーボンドープ半導体膜、半導体素子、及びこれらの製造方法
JP3642199B2 (ja) 窒化ガリウム系化合物半導体発光素子の製造方法
JP2001057463A (ja) 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法
JP4304984B2 (ja) 窒化物半導体成長基板およびそれを用いた窒化物半導体素子
JP2003229372A (ja) 半導体の製造方法、半導体装置の製造方法及び半導体基板の製造方法
JP3963233B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
JPH11346035A (ja) 窒化ガリウム系化合物半導体発光素子の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040705

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050707

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051128

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080722

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080805

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081007

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090317