JP2003224084A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JP2003224084A
JP2003224084A JP2002333095A JP2002333095A JP2003224084A JP 2003224084 A JP2003224084 A JP 2003224084A JP 2002333095 A JP2002333095 A JP 2002333095A JP 2002333095 A JP2002333095 A JP 2002333095A JP 2003224084 A JP2003224084 A JP 2003224084A
Authority
JP
Japan
Prior art keywords
substrate
laser
laser light
semiconductor film
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002333095A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003224084A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Hisashi Otani
久 大谷
正明 ▲ひろ▼木
Masaaki Hiroki
Koichiro Tanaka
幸一郎 田中
Aiko Shiga
愛子 志賀
Mai Akiba
麻衣 秋葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002333095A priority Critical patent/JP2003224084A/ja
Publication of JP2003224084A publication Critical patent/JP2003224084A/ja
Publication of JP2003224084A5 publication Critical patent/JP2003224084A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002333095A 2001-11-22 2002-11-18 半導体製造装置 Withdrawn JP2003224084A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002333095A JP2003224084A (ja) 2001-11-22 2002-11-18 半導体製造装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001358553 2001-11-22
JP2001-358553 2001-11-22
JP2002333095A JP2003224084A (ja) 2001-11-22 2002-11-18 半導体製造装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010250753A Division JP5427753B2 (ja) 2001-11-22 2010-11-09 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003224084A true JP2003224084A (ja) 2003-08-08
JP2003224084A5 JP2003224084A5 (https=) 2005-11-24

Family

ID=27759249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002333095A Withdrawn JP2003224084A (ja) 2001-11-22 2002-11-18 半導体製造装置

Country Status (1)

Country Link
JP (1) JP2003224084A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179068A (ja) * 2001-12-12 2003-06-27 Hitachi Ltd 画像表示装置およびその製造方法
JP2005079312A (ja) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP2005311327A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法
WO2007058286A1 (ja) * 2005-11-18 2007-05-24 Mitsubishi Gas Chemical Company, Inc. 基板の洗浄方法及び洗浄装置
US7615424B2 (en) 2004-03-25 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
US7929154B2 (en) 2005-12-20 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device
US8138058B2 (en) 2006-11-24 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Substrate with marker, manufacturing method thereof, laser irradiation apparatus, laser irradiation method, light exposure apparatus, and manufacturing method of semiconductor device
JP2020105894A (ja) * 2018-12-27 2020-07-09 コスモケミカル株式会社 視線誘導装置
JP2020128684A (ja) * 2019-02-08 2020-08-27 コスモケミカル株式会社 視線誘導装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175235A (ja) * 1991-12-25 1993-07-13 Sharp Corp 多結晶半導体薄膜の製造方法
JPH0792501A (ja) * 1993-07-30 1995-04-07 A G Technol Kk 画像表示用の基板とその製造方法、およびｔｆｔ表示素子
WO1997023806A1 (fr) * 1995-12-26 1997-07-03 Seiko Epson Corporation Substrat de matrice active, son procede de fabrication, affichage a cristaux liquides et equipement electronique
JPH09320961A (ja) * 1996-05-31 1997-12-12 Nec Corp 半導体製造装置及び薄膜トランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175235A (ja) * 1991-12-25 1993-07-13 Sharp Corp 多結晶半導体薄膜の製造方法
JPH0792501A (ja) * 1993-07-30 1995-04-07 A G Technol Kk 画像表示用の基板とその製造方法、およびｔｆｔ表示素子
WO1997023806A1 (fr) * 1995-12-26 1997-07-03 Seiko Epson Corporation Substrat de matrice active, son procede de fabrication, affichage a cristaux liquides et equipement electronique
JPH09320961A (ja) * 1996-05-31 1997-12-12 Nec Corp 半導体製造装置及び薄膜トランジスタの製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003179068A (ja) * 2001-12-12 2003-06-27 Hitachi Ltd 画像表示装置およびその製造方法
JP2005079312A (ja) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
JP2005210103A (ja) * 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法
JP2005311327A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd レーザ照射装置および当該レーザ照射装置を用いた半導体装置の作製方法
US7615424B2 (en) 2004-03-25 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus
WO2007058286A1 (ja) * 2005-11-18 2007-05-24 Mitsubishi Gas Chemical Company, Inc. 基板の洗浄方法及び洗浄装置
US7929154B2 (en) 2005-12-20 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device
US8138058B2 (en) 2006-11-24 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Substrate with marker, manufacturing method thereof, laser irradiation apparatus, laser irradiation method, light exposure apparatus, and manufacturing method of semiconductor device
JP2020105894A (ja) * 2018-12-27 2020-07-09 コスモケミカル株式会社 視線誘導装置
JP2020128684A (ja) * 2019-02-08 2020-08-27 コスモケミカル株式会社 視線誘導装置

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