JP2003209357A - Method for manufacturing multilayer board - Google Patents

Method for manufacturing multilayer board

Info

Publication number
JP2003209357A
JP2003209357A JP2002006767A JP2002006767A JP2003209357A JP 2003209357 A JP2003209357 A JP 2003209357A JP 2002006767 A JP2002006767 A JP 2002006767A JP 2002006767 A JP2002006767 A JP 2002006767A JP 2003209357 A JP2003209357 A JP 2003209357A
Authority
JP
Japan
Prior art keywords
substrate
manufacturing
board
laminating
stacking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002006767A
Other languages
Japanese (ja)
Other versions
JP4137451B2 (en
Inventor
Emi Nakamura
恵美 中村
Tomoyasu Gunji
智康 郡司
Toshihiro Murayama
敏宏 村山
Masayuki Yasuda
誠之 安田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Clover Electronics Co Ltd
Original Assignee
Sony Corp
Clover Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp, Clover Electronics Co Ltd filed Critical Sony Corp
Priority to JP2002006767A priority Critical patent/JP4137451B2/en
Publication of JP2003209357A publication Critical patent/JP2003209357A/en
Application granted granted Critical
Publication of JP4137451B2 publication Critical patent/JP4137451B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multilayer board having stronger electric resistance than that of a prior art. <P>SOLUTION: The method for manufacturing the multilayer board comprises the steps of selecting a laminating board 2 having a smaller shrinkage amount than that of a manufacturing board 5, positioning the board 2 on wirings W1 of the board 5, and integrally forming the board 5 positioned at the wirings W1 via prepregs 25a, 26a for mechanically integrating the boards 5 with the board 2. Thus, if the board 5 is shrunk while the board 2 remains positioned on the wirings W1 in association with the integration of the board 5 with the board 2, the board 2 is shrunk in smaller shrinkage amount than that of the board 5, and hence the board 5 can be electrically connected to the board 2 to each other in a state in which the positional deviation of the wirings W1 falls within a range of the shrinkage amount of the board 2. Thus, in the state in which the positional deviation of the board 2 to the board 5 is fallen in a minimum limit, the electric connection can be surely performed. Hence, the electric resistance can be strengthened as compared with prior art. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は多層基板製造方法に
関し、例えば2枚の基板を積層して多層基板を製造する
多層基板製造方法に適用して好適なものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a multilayer substrate, and is suitable for application to, for example, a method for manufacturing a multilayer substrate in which two substrates are laminated to manufacture a multilayer substrate.

【0002】[0002]

【従来の技術】従来、多層基板製造方法においては、製
造用のサイズでなる製造用基板上に、当該製造用基板と
ほぼ同サイズ及び同材質の積層用基板を積層し、当該製
造用基板及び積層用基板の一面に対してほぼ垂直にスル
ーホールを貫通形成して層間接続することにより、多層
基板を製造するようになされている。
2. Description of the Related Art Conventionally, in a method of manufacturing a multi-layer substrate, a stacking substrate having substantially the same size and the same material as that of the manufacturing substrate is stacked on the manufacturing substrate of the manufacturing size, A multilayer substrate is manufactured by penetrating through holes substantially perpendicular to one surface of a stacking substrate and connecting layers.

【0003】[0003]

【発明が解決しようとする課題】ところで、かかる多層
基板製造方法においては、互いに同サイズ及び同材質の
製造用基板及び積層用基板を用いているものの、製造用
基板及び積層用基板の一面に対する配線占有率が異なる
ので、製造工程中の熱処理や冷却処理によって製造用基
板の有機材料における収縮量と、積層用基板の有機材料
における収縮量とが大幅に相違することになる。
By the way, in the method for manufacturing a multilayer substrate, although the manufacturing substrate and the laminating substrate of the same size and the same material are used, the wiring for one surface of the manufacturing substrate and the laminating substrate is used. Since the occupation ratios are different, the shrinkage amount in the organic material of the manufacturing substrate and the shrinkage amount in the organic material of the laminating substrate are significantly different due to the heat treatment or the cooling treatment in the manufacturing process.

【0004】従って多層基板製造方法においては、製造
用基板及び積層用基板の一面に対してほぼ垂直にスルー
ホールを貫通形成した場合であっても、当該製造用基板
及び積層用基板に本来形成されるべきスルーホールの形
成位置が収縮量の相違によって大幅にずれてしまってい
るので、電気的接続が十分に行えず、電気的耐性が弱い
という問題があった。
Therefore, in the method of manufacturing a multilayer substrate, even if a through hole is formed so as to penetrate substantially perpendicularly to one surface of the manufacturing substrate and the laminating substrate, the through hole is originally formed in the manufacturing substrate and the laminating substrate. Since the formation position of the through hole to be formed is largely displaced due to the difference in the contraction amount, there is a problem that electrical connection cannot be sufficiently performed and electrical resistance is weak.

【0005】本発明は以上の点を考慮してなされたもの
で、従来に比して簡易な方法で電気的耐性の強い多層基
板を製造し得る多層基板製造方法を提案しようとするも
のである。
The present invention has been made in consideration of the above points, and it is an object of the present invention to propose a multi-layer substrate manufacturing method capable of manufacturing a multi-layer substrate having high electrical resistance by a simpler method than conventional methods. .

【0006】[0006]

【課題を解決するための手段】かかる課題を解決するた
め本発明においては、所定の製造用基板に比して少ない
収縮量でなる積層用基板を選定し、製造用基板の所定位
置に積層用基板を位置決めし、製造用基板と積層用基板
とを接続する接続仲介部を介して所定位置に位置決めさ
れた製造用基板及び積層用基板を硬化して一体形成し、
製造用基板、接続仲介部及び積層用基板を相互に電気的
に接続するようにし、当該硬化することに伴って、所定
位置に積層用基板が位置決めされたまま製造用基板が収
縮した場合に、積層用基板が製造用基板に比して少ない
収縮量で収縮されることにより、所定位置に対する積層
用基板の位置ずれが収縮量の範囲内に収まるようにし
た。
In order to solve such a problem, in the present invention, a laminating substrate having a shrinkage amount smaller than that of a predetermined manufacturing substrate is selected, and is laminated at a predetermined position of the manufacturing substrate. The substrate is positioned, and the manufacturing substrate and the laminating substrate that are positioned at a predetermined position through the connection intermediary portion that connects the manufacturing substrate and the laminating substrate are cured to be integrally formed,
When the manufacturing substrate, the connection mediation part and the laminating substrate are electrically connected to each other, and the curing causes the laminating substrate to be contracted while the laminating substrate is positioned at a predetermined position, By shrinking the laminating substrate with a smaller amount of shrinkage than the manufacturing substrate, the positional deviation of the laminating substrate with respect to the predetermined position is kept within the range of the amount of shrinkage.

【0007】従って本発明では、製造用基板及び積層用
基板が収縮しても、製造用基板の所定位置に対する積層
用基板の位置ずれが当該積層用基板の収縮量の範囲内に
収まるようになされているので、製造用基板に対する積
層用基板の位置ずれを最小限に収えた状態で電気的な接
続を確実に実行することができる。
Therefore, in the present invention, even if the manufacturing substrate and the laminating substrate shrink, the positional deviation of the laminating substrate with respect to the predetermined position of the manufacturing substrate falls within the range of the shrinkage amount of the laminating substrate. Therefore, it is possible to reliably perform the electrical connection in a state in which the positional deviation of the stacking substrate with respect to the manufacturing substrate is minimized.

【0008】[0008]

【発明の実施の形態】以下図面について、本発明の一実
施の形態を詳述する。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described in detail below with reference to the drawings.

【0009】本発明においては、完成品である多層基板
51〜53(図5)を製造するための多層基板製造方法
について、図1〜図5を用いて説明する。
In the present invention, a method for manufacturing a multilayer substrate 51 to 53 (FIG. 5), which is a finished product, will be described with reference to FIGS.

【0010】第1段階(図1(A)上段)として、多層
基板製造装置(図示せず)は、基板製造用のワークシー
トサイズ(面積)でなるガラスエポキシ材質の両面銅張
板1aをほぼ1/3以下の面積を有する3枚の基板に切
り分けた後、当該切り分けた3枚の基板の一面2A、3
A及び4Aに対してエッチングレジスト処理及び湿式エ
ッチング処理を順次施して1本の配線パターンでなる配
線wir1、wir2及びwir3を形成することにより、積層用基
板2、3及び4を作製する。
As a first step (upper part of FIG. 1 (A)), a multi-layer substrate manufacturing apparatus (not shown) uses a glass epoxy material double-sided copper clad plate 1a having a work sheet size (area) for manufacturing a substrate. After being cut into three substrates having an area of ⅓ or less, one surface 2A, 3
Etching resist treatment and wet etching treatment are sequentially applied to A and 4A to form wirings wir1, wir2, and wir3 having one wiring pattern, whereby the laminating substrates 2, 3, and 4 are manufactured.

【0011】一方、多層基板製造装置は、両面銅張板1
aと同サイズ同材質の両面銅張板1b(図1(A)下
段)の一面5Aに対して、当該両面銅張板1aから積層
用基板2、3及び4を作製した際の配線wir1、wir2及び
wir3と対応する位置に上述と同様の処理を施して配線W
1、W2及びW3を形成することにより、製造用基板5
を作製する。
On the other hand, the multi-layered board manufacturing apparatus has a double-sided copper clad board 1
Wiring wir1 when the laminating substrates 2, 3 and 4 are produced from the double-sided copper-clad plate 1a on one surface 5A of the double-sided copper-clad plate 1b (lower part of FIG. 1 (A)) of the same size and the same material as a wir2 and
Wiring W is performed by applying the same processing as above to the position corresponding to wir3.
1. Manufacturing substrate 5 by forming 1, W2 and W3
To make.

【0012】これにより多層基板製造装置は、製造用基
板5の一面5Aにおける面積のほぼ1/3以下の面積を
有する積層用基板2、3及び4を選定すると共に、製造
用基板5の配線W1、W2及びW3を互いに所定間隔離
した状態で形成し得るようになされている。
As a result, the multi-layer substrate manufacturing apparatus selects the laminating substrates 2, 3 and 4 having an area which is approximately ⅓ or less of the area of the one surface 5A of the manufacturing substrate 5, and the wiring W1 of the manufacturing substrate 5 is selected. , W2 and W3 can be formed in a state of being isolated from each other for a predetermined period.

【0013】なお積層用基板2、3及び4を製造用基板
5の一面5Aにおける面積のほぼ1/3以下の面積に選
定した理由については後述する。
The reason why the laminating substrates 2, 3 and 4 are selected to have an area that is approximately 1/3 or less of the area of the one surface 5A of the manufacturing substrate 5 will be described later.

【0014】また、多層基板製造装置は、製造用基板5
の配線W1、W2及びW3に対して端子めっき処理を行
うことにより、当該製造用基板5に対して積層用基板
2、3及び4を積層した後に行うマスキング処理等の追
加工程を省略し得るようになされている。
Further, the multi-layer substrate manufacturing apparatus includes a manufacturing substrate 5
By performing the terminal plating process on the wirings W1, W2, and W3, the additional process such as the masking process performed after the stacking substrates 2, 3 and 4 are stacked on the manufacturing substrate 5 can be omitted. Has been done.

【0015】第2段階(図1(B)上段)として、多層
基板製造装置は、半導体メモリ等でなるベアチップ11
aの回路形成面における所定位置へ形成したスタットバ
ンプ12aと、積層用基板2の一面2Aに形成した内周
側の配線wir1とを異方性導電膜13aを介して接合(い
わゆるフリップチップ実装)する。
As a second step (upper part of FIG. 1B), the multilayer substrate manufacturing apparatus is provided with a bare chip 11 composed of a semiconductor memory or the like.
The stat bump 12a formed at a predetermined position on the circuit formation surface of a and the wiring wir1 on the inner peripheral side formed on the one surface 2A of the laminating substrate 2 are joined via an anisotropic conductive film 13a (so-called flip-chip mounting). To do.

【0016】同様に多層基板製造装置は、ベアチップ1
1b及び11cの回路形成面における所定位置へ形成し
たスタットバンプ12b及び12cと、積層用基板3及
び4の一面3A及び4Aに形成した内周側の配線wir2及
びwir3とを異方性導電膜13b及び13cを介してフリ
ップチップ実装する。
Similarly, the multilayer substrate manufacturing apparatus is provided with the bare chip 1
The stat bumps 12b and 12c formed at predetermined positions on the circuit forming surfaces of 1b and 11c, and the inner peripheral wirings wir2 and wir3 formed on one surface 3A and 4A of the laminating substrates 3 and 4 are anisotropic conductive films 13b. And 13c for flip chip mounting.

【0017】第3段階(図2(C))として、多層基板
製造装置は、製造用基板5の配線W1上へ、積層用基板
2の一面2Aとほぼ同面積でなるガラスエポキシ材質の
介挿プリプレグ25a及び覆蓋プリプレグ26aを順次
積層し、さらに当該配線W1に配線wir1を対向させて位
置決めした状態で、ベアチップ11aが実装された積層
用基板2を積層する。
As a third step (FIG. 2C), the multi-layer substrate manufacturing apparatus inserts a glass epoxy material having substantially the same area as one surface 2A of the laminating substrate 2 onto the wiring W1 of the manufacturing substrate 5. The prepreg 25a and the cover prepreg 26a are sequentially laminated, and the lamination substrate 2 on which the bare chip 11a is mounted is laminated with the wiring wir1 facing the wiring W1 and being positioned.

【0018】同様に多層基板製造装置は、製造用基板5
の配線W2及びW3上へ、積層用基板3及び4の一面3
A及び4Aとほぼ同面積でなるガラスエポキシ材質の介
挿プリプレグ25b及び25c及び覆蓋プリプレグ26
b及び26cを順次積層し、さらに当該配線W2及びW
3に配線wir2及びwir3を対向させて位置決めした状態
で、ベアチップ11b及び11cが実装された積層用基
板3及び4を積層する。
Similarly, the multi-layer substrate manufacturing apparatus uses the manufacturing substrate 5
One side 3 of the stacking substrates 3 and 4 on the wirings W2 and W3 of
Insertion prepregs 25b and 25c and cover lid prepreg 26 made of glass epoxy material having substantially the same area as A and 4A
b and 26c are sequentially stacked, and the wirings W2 and W
The wiring boards 3 and 4 on which the bare chips 11b and 11c are mounted are stacked with the wirings wir2 and wir3 facing each other and being positioned on the wiring 3.

【0019】ここで介挿プリプレグ25a、25b及び
25cとは、製造用基板5と積層用基板2、3及び4と
の間における厚さを所定の厚さに選定するためのもので
あり、覆蓋プリプレグ26a、26b及び26cとは、
ベアチップ11a、11b及び11cを被覆するための
ものである。
Here, the interposing prepregs 25a, 25b and 25c are for selecting a predetermined thickness between the manufacturing substrate 5 and the laminating substrates 2, 3 and 4, and have a cover lid. What is the prepreg 26a, 26b and 26c?
It is for covering the bare chips 11a, 11b and 11c.

【0020】この場合、多層基板製造装置は、介挿プリ
プレグ25a、25b又は25cの厚さを適宜変更し得
るようになされており、これにより製造用基板5に対し
て積層用基板2、3又は4を積層した際の高さを、最終
的な製品の一部として用いられるマザーボード基板へ実
装した際に必要な高さとほぼ一致させ得るようになされ
ている。
In this case, the multi-layer substrate manufacturing apparatus is designed so that the thickness of the interposing prepreg 25a, 25b or 25c can be changed appropriately, whereby the laminating substrate 2, 3 or the manufacturing substrate 5 can be changed. The height when 4 is stacked can be made substantially equal to the height required when mounted on a motherboard substrate used as a part of the final product.

【0021】従って多層基板製造装置は、製造用基板5
と積層用基板2、3又は4との間における厚さを搭載機
器へ実装する際の高さの制約に対して柔軟に対応し得る
ようになされている。
Therefore, the multi-layer substrate manufacturing apparatus is provided with the manufacturing substrate 5
The thickness between the stacking substrate 2 and the laminating substrate 2, 3 or 4 can be flexibly dealt with when the height of the mounting device is limited.

【0022】また多層基板製造装置は、覆蓋プリプレグ
26a、26b又は26cの一部をベアチップ11a、
11b又は11cの体積に応じて除去することにより、
ベアチップ覆蓋空間v1、v2及びv3を形成し得るよ
うになされている。
In the multi-layer substrate manufacturing apparatus, a part of the cover lid prepreg 26a, 26b or 26c is bare chip 11a,
By removing depending on the volume of 11b or 11c,
The bare chip cover spaces v1, v2, and v3 can be formed.

【0023】これにより多層基板製造装置は、ベアチッ
プ覆蓋空間v1、v2及びv3を介してベアチップ11
a、11b及び11cを収容し得ることにより、当該ベ
アチップ11a、11b及び11cが実装された積層用
基板2、3及び4を覆蓋プリプレグ26a、26b及び
26cに対して互いに干渉することなく積層し得ると共
に、当該積層した状態で覆蓋プリプレグ26a、26b
及び26cを熱硬化した際にベアチップ11a、11b
及び11cの周囲へ速やかに拡散させ得るようになされ
ている。
As a result, the multi-layer substrate manufacturing apparatus uses the bare chip cover spaces v1, v2 and v3 to form the bare chip 11
By accommodating a, 11b, and 11c, the laminating boards 2, 3 and 4 on which the bare chips 11a, 11b and 11c are mounted can be laminated on the cover lid prepregs 26a, 26b and 26c without interfering with each other. Together with the cover lid prepregs 26a and 26b in the laminated state.
Bare chips 11a, 11b when heat curing of 26 and 26c
And 11c can be quickly diffused to the surroundings.

【0024】従って第4段階(図2(D))として、多
層基板製造装置は、介挿プリプレグ25a〜25c及び
覆蓋プリプレグ26a〜26c(図2(C))を真空雰
囲気中で所定温度に加熱すると、当該介挿プリプレグ2
5a〜25c及び覆蓋プリプレグ26a〜26cが熱硬
化する際の拡散によってベアチップ11a〜11cの周
囲を被覆すると共に、積層用基板2〜4と製造用基板5
とを気密性を保って一体化形成した層間部31、32、
33となる。
Therefore, in the fourth stage (FIG. 2D), the multi-layer substrate manufacturing apparatus heats the interposing prepregs 25a to 25c and the cover lid prepregs 26a to 26c (FIG. 2C) to a predetermined temperature in a vacuum atmosphere. Then, the insertion prepreg 2
5a to 25c and the cover lid prepregs 26a to 26c cover the periphery of the bare chips 11a to 11c by diffusion at the time of thermosetting, and the laminating substrates 2 to 4 and the manufacturing substrate 5
And the interlayer portions 31, 32, which are integrally formed while maintaining airtightness,
33.

【0025】その後、多層基板製造装置は常温常圧に戻
すと、熱硬化性を有する介挿プリプレグ25a〜25c
及び覆蓋プリプレグ26a〜26cとは逆に、積層用基
板2、3、4及び製造用基板5は、当該積層用基板2、
3、4及び製造用基板5のうちの有機部材がその特性に
従って硬化することになるので結果的に収縮してしまう
ことになる。
After that, when the multi-layer substrate manufacturing apparatus is returned to room temperature and normal pressure, the thermosetting intercalating prepregs 25a to 25c.
On the contrary to the cover lid prepregs 26a to 26c, the laminating substrates 2, 3, 4 and the manufacturing substrate 5 are the laminating substrate 2,
Since the organic members of the substrates 3 and 4 and the manufacturing substrate 5 are hardened according to their characteristics, they eventually shrink.

【0026】この場合、例えば図3に示すように、製造
用基板5と積層用基板2、3及び4とは互いに同材質で
あるので収縮率が同じであるが、積層用基板2、3及び
4は、その他面2B、3B及び4Bの面積がワークサイ
ズでなる製造用基板5の他面5Bよりも小さい(すなわ
ち積層用基板2、3及び4を所定間隔sp1及びsp2
ずつ離すことで配線W1、W2及びW3が独立した構成
とされている)ことにより、積層用基板2、3及び4の
収縮量sh3及びsh4、sh5及びsh6、sh7及
びsh8については製造用基板5の収縮量sh1及びs
h2よりも格段に少なくなる。
In this case, for example, as shown in FIG. 3, since the manufacturing substrate 5 and the laminating substrates 2, 3 and 4 are made of the same material, they have the same shrinkage, but the laminating substrates 2, 3 and 4 is smaller than the other surface 5B of the manufacturing substrate 5 in which the areas of the other surfaces 2B, 3B and 4B are the work size (that is, the stacking substrates 2, 3 and 4 are separated by a predetermined distance sp1 and sp2.
The wirings W1, W2, and W3 are independently configured by separating them from each other), so that the shrinkage amounts sh3 and sh4, sh5 and sh6, sh7, and sh8 of the stacking substrates 2, 3 and 4 are the manufacturing substrate 5. Shrinkage of sh1 and s
It is much less than h2.

【0027】これに加えて積層用基板2、3及び4は、
製造用基板5上に積層された状態で保持されているの
で、当該製造用基板5の収縮動作に対する積層用基板
2、3及び4の位置ずれについては殆ど起こらない。す
なわち製造用基板5に対して積層用基板2、3及び4の
位置関係はほぼ保持された状態のまま製造用基板5が収
縮されるからである。
In addition to this, the lamination substrates 2, 3 and 4 are
Since the laminated substrates are held on the manufacturing substrate 5, the displacement of the laminating substrates 2, 3 and 4 with respect to the contraction operation of the manufacturing substrate 5 hardly occurs. That is, this is because the manufacturing substrate 5 is contracted while the positional relationship between the laminating substrates 2, 3, and 4 with respect to the manufacturing substrate 5 is substantially maintained.

【0028】従って製造用基板5の配線W1、W2及び
W3に対する積層用基板2、3及び4の配線wir1、wir2
及びwir3のずれ量は、積層用基板2、3及び4の収縮量
sh3及びsh4、sh5及びsh6、sh7及びsh
8の範囲内に収まることになり、その結果多層基板製造
装置は、製造用基板5に対する積層用基板2、3及び4
の位置ずれが最小限に収まっている状態で電気的な接続
を実行し得るようになされている。
Therefore, the wirings wir1, wir2 of the laminating substrates 2, 3 and 4 with respect to the wirings W1, W2 and W3 of the manufacturing substrate 5
The deviation amounts of wir3 and wir3 are the shrinkage amounts sh3 and sh4, sh5 and sh6, sh7 and sh of the stacking substrates 2, 3 and 4, respectively.
Therefore, the multi-layer substrate manufacturing apparatus has a stacking substrate 2, 3 and 4 for the manufacturing substrate 5 as a result.
The electrical connection can be performed in a state in which the positional deviation of the is minimized.

【0029】ここで、上述の第1段階(図1(A)上
段)で積層用基板2、3及び4を製造用基板5のほぼ1
/3の面積に選定した理由としては、ワークシートサイ
ズでなる1枚の製造用基板5上へ一度に積層して多数の
製品を製造し得る生産性の観点からすれば、積層用基板
2、3及び4の一面2A、3A及び4Aの面積を極力小
さくすることが望ましいが、ベアチップ11a、11b
及び11cを実装することの必要性を加味しつつ、積層
用基板2、3及び4の収縮量sh3及びsh4、sh5
及びsh6、sh7及びsh8(図4)の範囲内に収縮
量が収まるようにすることを考慮すれば、一般的には少
なくとも製造用配線板5の一面5Aの面積に対してほぼ
1/3の面積であることが理想的と考えられるからであ
る。
Here, in the above-mentioned first step (upper part of FIG. 1 (A)), the lamination substrates 2, 3 and 4 are almost the same as the production substrate 5.
The reason why the area is selected to be / 3 is, from the viewpoint of productivity that a large number of products can be manufactured by laminating at one time on one manufacturing substrate 5 having a work sheet size, the laminating substrate 2, It is desirable to minimize the area of one surface 2A, 3A and 4A of 3 and 4, but bare chips 11a and 11b.
And 11c, the shrinkage amounts sh3 and sh4, sh5 of the laminating substrates 2, 3, and 4 are taken into consideration.
Considering that the shrinkage amount is settled within the range of sh6, sh7, sh8 (FIG. 4), generally at least about 1/3 of the area of one surface 5A of the manufacturing wiring board 5 is required. This is because the area is considered to be ideal.

【0030】従って多層基板製造装置は、第1段階(図
1(A)上段)で積層用基板2、3及び4の一面2A、
3A及び4Aを製造用基板5の一面5Aにおける面積の
ほぼ1/3の面積となるように切り分けていることによ
り、生産性を必要最大限に確保し得ると共に、製造用基
板5に対する積層用基板2、3及び4の位置ずれを最小
限に収え得るようになされている。
Therefore, in the multi-layer substrate manufacturing apparatus, in the first step (upper part of FIG. 1A), one surface 2A of the laminating substrates 2, 3 and 4 is
By dividing 3A and 4A so as to have an area that is approximately ⅓ of the area of the one surface 5A of the manufacturing substrate 5, the productivity can be ensured to the necessary maximum, and the laminating substrate for the manufacturing substrate 5 can be secured. The position shifts of 2, 3 and 4 can be minimized.

【0031】この状態において、第5段階(図4
(E))として多層基板製造装置は、積層用基板2〜4
の他面2B〜4Bの所定位置から配線wir1〜wir3及び配
線W1〜W3を順次介して製造用基板5の他面5Bにか
けてほぼ垂直に貫通孔を形成した後、当該貫通孔の内周
面に対して銅めっき処理を行ってスルーホール35A及
び36A、35B及び36B、35C及び36Cを形成
する。
In this state, the fifth stage (see FIG. 4)
As (E)), the multilayer substrate manufacturing apparatus is used for laminating substrates 2 to 4
After forming a through hole substantially vertically from the predetermined position of the other surface 2B to 4B to the other surface 5B of the manufacturing substrate 5 through the wirings wir1 to wir3 and the wirings W1 to W3 in order, the inner peripheral surface of the through hole is formed. Copper plating is applied to the through holes 35A and 36A, 35B and 36B, 35C and 36C.

【0032】これにより多層基板製造装置は、積層用基
板2〜4の他面2B〜4B及び一面2A〜4Aと、製造
用基板5の一面5A及び他面5Bとをスルーホール35
A及び36A、35B及び36B、35C及び36Cを
介して接続し、積層用基板2〜4の他面2B〜4Bから
製造用基板5の他面5Bまでの各層をそれぞれ強固に電
気的及び機械的に層間接続する。
As a result, the multi-layer substrate manufacturing apparatus connects the other surfaces 2B to 4B and one surface 2A to 4A of the laminating boards 2 to 4 and the one surface 5A and the other surface 5B of the manufacturing board 5 to the through holes 35.
A and 36A, 35B and 36B, 35C and 36C are connected, and each layer from the other surface 2B to 4B of the laminating substrates 2 to 4 to the other surface 5B of the manufacturing substrate 5 is firmly electrically and mechanically connected. Connect between layers.

【0033】第6段階(図4(F))として、多層基板
製造装置は、積層用基板2、3及び4の他面2B、3B
及び4Bに所定パターンの配線41、42及び43を形
成することにより、製造用多層基板50を作製する。
As a sixth step (FIG. 4 (F)), the multi-layer substrate manufacturing apparatus uses the other surfaces 2B, 3B of the laminating substrates 2, 3 and 4.
By forming the wirings 41, 42 and 43 having a predetermined pattern on the wiring layers 4 and 4B, the manufacturing multilayer substrate 50 is manufactured.

【0034】第7段階として、図5に示すように、多層
基板製造装置は、製造用多層基板50(図4(F))の
製造用基板5を所定位置で切断することにより、多層基
板51、52及び53を製造し得るようになされてい
る。
As a seventh step, as shown in FIG. 5, the multilayer substrate manufacturing apparatus cuts the manufacturing substrate 5 of the manufacturing multilayer substrate 50 (FIG. 4 (F)) at a predetermined position to thereby obtain the multilayer substrate 51. , 52 and 53 can be manufactured.

【0035】かかる多層基板51、52及び53は、製
造工程中の熱処理や冷却処理によって製造用基板5及び
積層用基板2、3及び4の有機材料が収縮した場合にお
いても、製造用基板5に対する積層用基板2、3及び4
の位置ずれが最小限に収まっている状態でスルーホール
35A及び36A、35B及び36B、35C及び36
Cを介して電気的に接続されていることにより、全体と
して電気的耐性が強化されている。
The multi-layered substrates 51, 52, and 53 are provided with respect to the manufacturing substrate 5 even when the organic materials of the manufacturing substrate 5 and the laminating substrates 2, 3 and 4 shrink due to heat treatment or cooling treatment in the manufacturing process. Laminating Substrates 2, 3 and 4
Through holes 35A and 36A, 35B and 36B, 35C and 36 with the positional deviation of
By being electrically connected via C, electrical resistance is strengthened as a whole.

【0036】以上の多層基板製造方法において、多層基
板製造装置は、まず、ワークシートサイズ(面積)でな
るガラスエポキシ材質の両面銅張板1a(図1(A)上
段)を製造用基板5の一面5Aにおける面積に対してほ
ぼ1/3の面積となるように切り分けて積層用基板2を
予め作製しておくことにより、製造用基板5の収縮量に
比して少ない収縮量でなる積層用基板2を選定する。
In the above-described method for manufacturing a multilayer board, the apparatus for manufacturing a multilayer board first prepares the double-sided copper clad board 1a (upper part of FIG. 1A) made of a glass epoxy material having a work sheet size (area) on the manufacturing board 5. By preliminarily manufacturing the laminating substrate 2 by dividing it into an area of about 1/3 of the area of the one surface 5A, the laminating substrate 2 has a shrinkage amount smaller than that of the manufacturing substrate 5. The substrate 2 is selected.

【0037】そして多層基板製造装置は、製造用基板5
の一面5A(図2(C))に形成した配線W1上に、介
挿プリプレグ25a及び覆蓋プリプレグ26aを介して
積層用基板2の配線wir1を対向させて位置決めした状態
で積層用回路基板15を積層する。
Then, the multi-layer substrate manufacturing apparatus is provided with the manufacturing substrate 5
On the wiring W1 formed on the one surface 5A (FIG. 2C), the wiring circuit board 15 is positioned in a state where the wiring wir1 of the laminating board 2 is positioned so as to be opposed to each other via the interposition prepreg 25a and the cover lid prepreg 26a. Stack.

【0038】ここで多層基板製造装置は、介挿プリプレ
グ25a(図2(D))及び覆蓋プリプレグ26aを加
熱硬化して製造用基板5、介挿プリプレグ25a、覆蓋
プリプレグ26a及び積層用基板2を一体化させた後に
常温に戻すと、当該積層用基板2及び製造用基板5は有
機部材の特性に従って硬化する際に収縮(図3)してし
まうことになる。
Here, the multilayer substrate manufacturing apparatus heat-cures the interposing prepreg 25a (FIG. 2 (D)) and the cover lid prepreg 26a to heat the manufacturing substrate 5, the interposing prepreg 25a, the cover lid prepreg 26a, and the laminating substrate 2. When the temperature is returned to room temperature after the integration, the lamination substrate 2 and the production substrate 5 shrink (FIG. 3) when cured according to the characteristics of the organic member.

【0039】しかしながら、積層用基板2はその他面2
Bがワークサイズでなる製造用基板5の他面5Bよりも
小さいので、その収縮量sh3及びsh4については製
造用基板5の収縮量sh1及びsh2よりも格段に少な
いと共に、製造用基板5に対して積層用基板2の位置関
係はほぼ保持された状態のまま製造用基板5が収縮され
ることにより、製造用基板5の配線W1に対する積層用
基板2の配線wir1のずれ量は、積層用基板2の収縮量s
h3及びsh4の範囲内に収まる。
However, the laminating substrate 2 has the other surface 2
Since B is smaller than the other surface 5B of the manufacturing substrate 5 having the work size, the shrinkage amounts sh3 and sh4 thereof are significantly smaller than the shrinkage amounts sh1 and sh2 of the manufacturing substrate 5, and As a result of the manufacturing substrate 5 contracting while the positional relationship of the laminating substrate 2 is substantially maintained, the deviation amount of the wiring wir1 of the laminating substrate 2 from the wiring W1 of the manufacturing substrate 5 is 2 shrinkage s
It falls within the range of h3 and sh4.

【0040】この状態において多層基板製造装置は、積
層用基板2(図4(E))の他面2Bの所定位置から配
線wir1及び配線W1を介して製造用基板5の他面5Bに
かけてほぼ垂直にスルーホール35A及び36Aを形成
するようにした。
In this state, the multilayer substrate manufacturing apparatus is substantially vertical from the predetermined position of the other surface 2B of the laminating substrate 2 (FIG. 4 (E)) to the other surface 5B of the manufacturing substrate 5 via the wiring wir1 and the wiring W1. The through holes 35A and 36A are formed in.

【0041】従って多層基板製造装置は、製造用基板5
及び積層用基板2が収縮しても、製造用基板5の配線W
1に対する配線wir1の位置ずれが当該積層用基板2の収
縮量sh3及びsh4の範囲内に収まっているので、製
造用基板5に対する積層用基板2の位置ずれを最小限に
収えた状態で電気的な接続を確実に実行することができ
る。
Therefore, the multi-layer substrate manufacturing apparatus is provided with the manufacturing substrate 5
And even if the laminating substrate 2 shrinks, the wiring W of the manufacturing substrate 5
Since the positional deviation of the wiring wir1 with respect to 1 is within the range of the shrinkage amounts sh3 and sh4 of the laminating substrate 2, the electrical displacement is minimized with respect to the manufacturing substrate 5. Reliable connection can be performed.

【0042】また、多層基板製造装置は、製造用基板5
(図3)の一面5Aに配線W2及びW3を所定間隔sp
1及びsp2ずつ離して独立させた構成とし、積層用基
板2と同様の工程によってスルーホール35B及び36
B(図4(E))、35C及び36Cを形成しているこ
とにより、製造用基板5の配線W1に対する積層用基板
2、3及び4の配線wir1、wir2及びwir3のずれ量を積層
用基板2、3及び4の収縮量sh3及びsh4、sh5
及びsh6、sh7及びsh8の範囲内に収まるように
することを1つの製造用基板5上で一度に実現すること
ができる。
Further, the multi-layer substrate manufacturing apparatus includes the manufacturing substrate 5
(FIG. 3) Wirings W2 and W3 are provided on one surface 5A at a predetermined interval sp.
1 and sp2 are separated from each other to be independent, and through holes 35B and 36 are formed by the same process as that for the laminating substrate 2.
B (FIG. 4 (E)), 35C and 36C are formed, so that the deviation amount of the wirings wir1, wir2 and wir3 of the laminating substrates 2, 3 and 4 with respect to the wiring W1 of the manufacturing substrate 5 can be determined. Shrinkage amounts sh3, sh4, sh5 of 2, 3 and 4
, And sh6, sh7, and sh8 can be realized at one time on one manufacturing substrate 5.

【0043】以上のような多層回路基板製造方法によれ
ば、多層基板製造装置は、製造用基板5及び積層用基板
2の有機部材の特性により当該製造用基板5及び積層用
基板2が収縮しても、製造用基板5の配線W1に対する
積層用基板2の配線wir1のずれ量が当該積層用基板2の
収縮量sh3及びsh4の範囲内に収まるようにしたこ
とにより製造用基板5に対する積層用基板2の位置ずれ
を最小限に収えた状態で電気的な接続を確実に実行する
ことができ、かくして、従来に比して簡易な方法で電気
的耐性の強い多層基板を製造することができる。
According to the method for manufacturing a multilayer circuit board as described above, the manufacturing apparatus for a multilayer board shrinks the manufacturing board 5 and the stacking board 2 due to the characteristics of the organic members of the manufacturing board 5 and the stacking board 2. Even if the deviation amount of the wiring wir1 of the laminating substrate 2 with respect to the wiring W1 of the manufacturing substrate 5 falls within the range of the shrinkage amounts sh3 and sh4 of the laminating substrate 2, The electrical connection can be surely performed with the positional deviation of the substrate 2 kept to a minimum, and thus a multilayer substrate having high electrical resistance can be manufactured by a simpler method than the conventional method. .

【0044】なお上述の実施の形態においては、第1段
階(図1(A)上段)で製造用基板5の一面5Aにおけ
る面積に対してほぼ1/3の面積となるように両面銅張
板1aを切り分けて積層用基板2、3及び4を予め作製
しておくことにより選定する場合について述べたが、本
発明はこれに限らず、製造用基板5と同サイズであって
も製造用基板5よりも収縮量が少ない積層用基板を用い
ていれば良く、要は、第2段階(図1(B))の工程へ
移行する際に製造用基板の収縮量に比して少ない収縮量
でなる積層用基板が選定されていれば、この他種々の積
層用基板を幅広く用いることができる。
In the above-described embodiment, the double-sided copper clad plate is made to have an area of about 1/3 of the area of the one surface 5A of the manufacturing substrate 5 in the first step (upper part of FIG. 1A). Although the case has been described in which the laminating substrates 2, 3 and 4 are preliminarily produced by separating the laminating substrate 1a, the present invention is not limited to this. It is only necessary to use a laminating substrate having a shrinkage amount smaller than that of No. 5, and the point is that the shrinkage amount is smaller than the shrinkage amount of the manufacturing substrate when shifting to the process of the second stage (FIG. 1B). If the laminating substrate consisting of is selected, various other laminating substrates can be widely used.

【0045】また上述の実施の形態においては、接続仲
介部としてのガラスエポキシ材質でなる介挿プリプレグ
25a〜25c及び覆蓋プリプレグ26a〜26c(層
間部31〜33)を用いる場合について述べたが、本発
明はこれに限らず、ポリフェニレンエーテル又はビスマ
レイミドトリアジン材質等、この他種々の材質でなる接
続仲介部を用いるようにしても良い。
In the above embodiment, the case where the interposing prepregs 25a to 25c and the cover lid prepregs 26a to 26c (interlayer portions 31 to 33) made of glass epoxy material are used as the connection intermediary portion has been described. The invention is not limited to this, and a connection intermediary portion made of various other materials such as polyphenylene ether or bismaleimide triazine may be used.

【0046】この場合、特に、ポリフェニレンエーテル
又はビスマレイミドトリアジンの含有量が多い材質でな
る接続仲介部は、ガラスエポキシ材質でなる覆蓋プリプ
レグ26a〜26c及び介挿プリプレグ25a〜25c
に比して熱膨張係数が低いので加熱後の硬化による反り
を効果的に低減し得ることにより、製造用基板5に対す
る積層用基板2の位置ずれを一段と収えた状態で電気的
な接続を一段と確実に実行することができる。
In this case, in particular, the connection intermediary portion made of a material having a large content of polyphenylene ether or bismaleimide triazine is used as the cover lid prepregs 26a to 26c and the insertion prepregs 25a to 25c made of a glass epoxy material.
Since the coefficient of thermal expansion is lower than that of, the warpage due to curing after heating can be effectively reduced, and the electrical connection is further improved with the positional deviation of the laminating substrate 2 with respect to the manufacturing substrate 5 further reduced. It can be executed reliably.

【0047】さらに上述の実施の形態においては、表面
実装部品としてのベアチップ11a、11b及び11c
を積層用基板2、3及び4に実装する場合について述べ
たが、本発明はこれに限らず、ベアチップ11a、11
b及び11cを製造用基板5に実装するようにしても良
い。この場合上述の実施の形態と同様の効果を得ること
ができる。
Further, in the above-described embodiment, bare chips 11a, 11b and 11c as surface mount components are used.
However, the present invention is not limited to this, and the bare chips 11a, 11 may be mounted.
b and 11c may be mounted on the manufacturing substrate 5. In this case, the same effect as that of the above-described embodiment can be obtained.

【0048】さらに上述の実施の形態においては、表面
実装部品としてのベアチップ11a、11b及び11c
を実装する場合について述べたが、本発明はこれに限ら
ず、トランジスタやダイオード等の部品でなるこの他種
々の表面実装部品を実装することができる。この場合上
述の実施の形態と同様の効果を得ることができる。
Further, in the above-described embodiment, bare chips 11a, 11b and 11c as surface mount components are used.
However, the present invention is not limited to this, and various other surface mount components such as components such as transistors and diodes can be mounted. In this case, the same effect as that of the above-described embodiment can be obtained.

【0049】さらに上述の実施の形態においては、介挿
プリプレグ25a、25b又は25cの厚さを適宜変更
する場合について述べたが、本発明はこれに限らず、当
該介挿プリプレグ25a、25b又は25cの厚さの変
更に加えて、積層用基板2、3又は4のサイズを最終製
品への実装用面積とほぼ同面積となるようにそれぞれ選
定し、最終製品の実装用の配線パターンにそれぞれ配線
41、42又は43を形成するようにしても良い。
Further, in the above-described embodiment, the case where the thickness of the interposing prepreg 25a, 25b or 25c is changed appropriately has been described, but the present invention is not limited to this, and the interposing prepreg 25a, 25b or 25c. In addition to changing the thickness of the product, the size of the stacking substrate 2, 3 or 4 is selected so as to be almost the same as the mounting area on the final product, and the wiring pattern is mounted on the wiring pattern for mounting the final product. 41, 42 or 43 may be formed.

【0050】この場合、多層基板製造装置は、多層基板
51〜53を製造する工程前に、最終製品へ実装し得る
実装空間に対応させたものとしてそれぞれ製造でき、多
層基板51〜53として切断した後には、最終製品への
実装を円滑に行わせることができると共に、最終製品へ
の実装時における冗長な工程を省略することができる。
In this case, the multi-layered board manufacturing apparatus can manufacture the multi-layered boards 51 to 53 as corresponding to the mounting space that can be mounted on the final product before the steps of manufacturing the multi-layered boards 51 to 53, and cut the multi-layered boards 51 to 53. After that, the mounting on the final product can be smoothly performed, and the redundant process at the time of mounting on the final product can be omitted.

【0051】さらに上述の実施の形態においては、スル
ーホール35A及び36A、35B及び36B、35C
及び36Cを形成する際に、製造用基板5と積層用基板
2〜4とを介挿プリプレグ25a〜25c及び覆蓋プリ
プレグ26a〜26cによって一体化した後に貫通孔を
形成する場合について述べたが、本発明はこれに限ら
ず、当該一体化する前に貫通孔を形成するようにしても
良い。
Further, in the above-described embodiment, the through holes 35A and 36A, 35B and 36B, 35C.
And 36C, the case where the through hole is formed after the manufacturing substrate 5 and the laminating substrates 2 to 4 are integrated by the interposing prepregs 25a to 25c and the cover lid prepregs 26a to 26c has been described. The invention is not limited to this, and the through hole may be formed before the integration.

【0052】この場合、上述の第3段階を示した図2
(C)との対応部分に同一符号を付して示す図6のよう
に、多層基板製造装置は、導電ペースト、はんだ又はス
タッドバンプ等でなる棒状の導通用部材62A及び63
A、62B及び63B、62C及び63Cを製造用基板
5の配線W1、W2及びW3上のスルーホール形成位置
に予め突設しておくと共に、介挿プリプレグ25a〜2
5c及び覆蓋プリプレグ26a〜26cに対して当該導
通用部材62A及び63A、62B及び63B、62C
及び63Cにそれぞれ対応する位置に貫通孔64A及び
65A、64B及び65B、64C及び65Cを形成し
ておく。
In this case, FIG. 2 showing the above-mentioned third stage.
As shown in FIG. 6 in which parts corresponding to those in (C) are denoted by the same reference numerals, the multilayer substrate manufacturing apparatus includes rod-shaped conducting members 62A and 63 made of conductive paste, solder, stud bumps, or the like.
A, 62B and 63B, 62C and 63C are preliminarily provided at the through hole forming positions on the wirings W1, W2 and W3 of the manufacturing substrate 5 and the interposing prepregs 25a to 25a are formed.
5c and the cover lid prepregs 26a to 26c, the conductive members 62A and 63A, 62B and 63B, 62C.
Through holes 64A and 65A, 64B and 65B, 64C and 65C are formed at positions corresponding to 63 and 63C, respectively.

【0053】そして多層基板製造装置は、貫通孔64A
及び65A、64B及び65B、64C及び65Cに導
通用部材62A及び63A、62B及び63B、62C
及び63Cを挿通させて介挿プリプレグ25a〜25c
及び覆蓋プリプレグ26a〜26cを順次積層し、続い
てベアチップ11a、11b及び11cが実装された積
層用基板2、3及び4を積層した後、介挿プリプレグ2
5a〜25c及び覆蓋プリプレグ26a〜26cを加熱
することにより製造用基板5と積層用基板2、3及び4
とを一体化する。
The multi-layer substrate manufacturing apparatus has a through hole 64A.
And 65A, 64B and 65B, 64C and 65C to the conducting members 62A and 63A, 62B and 63B, 62C.
And 63C are inserted to insert the prepregs 25a to 25c.
And the cover lid prepregs 26a to 26c are sequentially laminated, and subsequently the lamination substrates 2, 3 and 4 on which the bare chips 11a, 11b and 11c are mounted are laminated, and then the interposition prepreg 2 is formed.
5a to 25c and the cover lid prepregs 26a to 26c are heated to produce the manufacturing substrate 5 and the laminating substrates 2, 3 and 4
Integrate with.

【0054】このようにすれば、多層基板製造装置は、
上述の第5段階(図4(E))における銅めっき処理工
程を削除することができると共に、製造用基板5に対す
る積層用基板2の収縮量を当該積層用基板2の収縮量s
h2の範囲内に収めることに伴って位置ずれを一段と低
減した状態で電気的な接続を一段と確実に実行すること
ができる。
In this way, the apparatus for manufacturing a multilayer substrate is
The copper plating process in the fifth step (FIG. 4 (E)) described above can be omitted, and the shrinkage amount of the stacking substrate 2 with respect to the manufacturing substrate 5 can be determined by the shrinkage amount s of the stacking substrate 2.
By keeping the displacement within the range of h2, it is possible to further reliably perform the electrical connection in a state in which the positional deviation is further reduced.

【0055】さらに上述の実施の形態においては、製造
用基板5の一面5Aへ介挿プリプレグ25a及び覆蓋プ
リプレグ26aを介して積層用基板2を積層する場合に
ついて述べたが、本発明はこれに限らず、製造用基板5
の他面5Bに積層用基板を積層するようにしても良い。
Further, in the above-described embodiment, the case where the laminating substrate 2 is laminated on the one surface 5A of the manufacturing substrate 5 via the interposing prepreg 25a and the cover lid prepreg 26a has been described, but the present invention is not limited to this. No, manufacturing substrate 5
A lamination substrate may be laminated on the other surface 5B.

【0056】例えば図4(D)との対応部分に同一符号
を付した図7(A)に示す具体例のように、多層基板製
造装置は、上下反転された製造用基板5の他面5Bに所
定の配線70を形成し、その形成部分にベアチップ71
をフリップチップ実装する。
For example, as in the specific example shown in FIG. 7A in which parts corresponding to those in FIG. 4D are designated by the same reference numerals, the multilayer substrate manufacturing apparatus has the other surface 5B of the manufacturing substrate 5 which is turned upside down. The predetermined wiring 70 is formed on the
Flip chip mounting.

【0057】続いて多層基板製造装置は、製造用基板5
の一面5B上へ、ベアチップ71実装部分を囲むような
(コの字状のように一部が空いていても良い)介挿プリ
プレグ72を積層した後、当該配線70と、製造用基板
5の収縮量に比して少ない収縮量でなる積層用基板73
の配線とを位置決めさせた状態で当該積層用基板73を
積層する。
Subsequently, the multi-layered board manufacturing apparatus uses the manufacturing board 5
After laminating the insertion prepreg 72 surrounding the mounting portion of the bare chip 71 (a part may be open like a U shape) on the one surface 5B, the wiring 70 and the manufacturing substrate 5 Laminating substrate 73 having a smaller shrinkage amount than the shrinkage amount
The stacking substrate 73 is stacked in a state where the wiring and the wiring are positioned.

【0058】この状態において多層基板製造装置は、介
挿プリプレグ72を加熱硬化することにより、製造用基
板5、介挿プリプレグ72及び積層用基板73を一体化
させた後にスルーホール75A、75Bを形成する。
In this state, the multi-layer substrate manufacturing apparatus forms the through holes 75A and 75B after the manufacturing substrate 5, the interposed prepreg 72 and the laminating substrate 73 are integrated by heating and curing the interposed prepreg 72. To do.

【0059】また、例えば図4(D)との対応部分に同
一符号を付した図7(B)に示す具体例のように、多層
基板製造装置は、上下反転された製造用基板5の他面5
Bに所定の配線80を形成し、その配線80上へ介挿プ
リプレグ82を積層した後、当該配線80と、製造用基
板5の収縮率に比して少ない収縮率でなる積層用基板8
3の配線とを位置決めさせた状態で当該積層用基板83
を積層する。
Further, as in the specific example shown in FIG. 7B in which the same parts as those in FIG. 4D are denoted by the same reference numerals, the multilayer substrate manufacturing apparatus is different from the manufacturing substrate 5 which is turned upside down. Surface 5
A predetermined wiring 80 is formed on the wiring B, and the interposing prepreg 82 is laminated on the wiring 80. Then, the wiring 80 and the laminating substrate 8 having a shrinkage ratio smaller than that of the manufacturing substrate 5 are obtained.
And the wiring 3 is positioned and the lamination substrate 83 is positioned.
Are stacked.

【0060】この状態において多層基板製造装置は、介
挿プリプレグ82を加熱硬化することにより、製造用基
板5、介挿プリプレグ82及び積層用基板83を一体化
させた後にスルーホール85を形成する。
In this state, the multi-layer substrate manufacturing apparatus forms the through hole 85 by integrating the manufacturing substrate 5, the interposed prepreg 82 and the laminating substrate 83 by heating and curing the interposed prepreg 82.

【0061】かかる具体例の場合、上述の実施の形態と
同様に、製造用基板5の配線70及び80と積層用基板
73及び83の配線との位置関係は、ほぼ保持された状
態のまま収縮することにより、製造用基板5の配線70
及び80に対する積層用基板73及び83の配線のずれ
量は当該積層用基板73及び83の収縮量の範囲内に収
まるので、多層基板製造装置は、製造用基板5に対する
積層用基板2(3、4)の位置ずれと、当該製造用基板
5に対する積層用基板73及び83の位置ずれとの双方
とも最小限に収えた状態で電気的な接続を確実に実行す
ることができる。
In the case of such a specific example, similarly to the above-described embodiment, the positional relationship between the wirings 70 and 80 of the manufacturing substrate 5 and the wirings of the laminating substrates 73 and 83 contracts while maintaining a substantially held state. As a result, the wiring 70 of the manufacturing substrate 5
Since the amount of wiring deviation of the stacking substrates 73 and 83 with respect to the stacking substrates 73 and 83 falls within the range of shrinkage of the stacking substrates 73 and 83, the multilayer substrate manufacturing apparatus uses the stacking substrate 2 (3, It is possible to surely perform the electrical connection in a state where both the positional deviation of 4) and the positional deviation of the laminating substrates 73 and 83 with respect to the manufacturing substrate 5 are minimized.

【0062】これに加えて、積層用基板73及び83の
一面及び介挿プリプレグ72及び82の面積を最終製品
(マザー基板)への実装用のサイズに選定すると共に、
製造用基板5に対して積層用基板73又は83を積層し
た際の高さが最終製品へ実装する際の高さにほぼ一致す
るように介挿プリプレグ72及び82の厚みを選定させ
ておけば、最終製品への実装空間が複雑な場合でも、そ
れに対応させたものを1つの製造用基板5上で製造で
き、その結果、最終製品への実装を円滑に行わせること
ができると共に、最終製品への実装時における冗長な工
程を省略することができる。
In addition to this, one surface of the laminating boards 73 and 83 and the areas of the interposing prepregs 72 and 82 are selected as sizes for mounting on the final product (mother board).
The thickness of the interposing prepregs 72 and 82 should be selected so that the height when the laminating substrate 73 or 83 is laminated on the manufacturing substrate 5 is substantially the same as the height when mounting on the final product. Even if the mounting space for the final product is complicated, the corresponding one can be manufactured on one manufacturing substrate 5, and as a result, the mounting on the final product can be smoothly performed, and at the same time, the final product can be mounted. It is possible to omit a redundant process at the time of mounting on.

【0063】[0063]

【発明の効果】上述のように本発明によれば、所定の製
造用基板に比して少ない収縮量でなる積層用基板を選定
し、製造用基板の所定位置に積層用基板を位置決めし、
製造用基板と積層用基板とを接続する接続仲介部を介し
て所定位置に位置決めされた製造用基板及び積層用基板
を硬化して一体形成し、製造用基板、接続仲介部及び積
層用基板を相互に電気的に接続するようにし、当該硬化
することに伴って、所定位置に積層用基板が位置決めさ
れたまま製造用基板が収縮した場合に、積層用基板が製
造用基板に比して少ない収縮量で収縮されることによ
り、所定位置に対する積層用基板の位置ずれが収縮量の
範囲内に収まるようにした。
As described above, according to the present invention, a stacking substrate having a shrinkage amount smaller than that of a predetermined manufacturing substrate is selected, and the stacking substrate is positioned at a predetermined position of the manufacturing substrate.
The manufacturing substrate and the laminating substrate, which are positioned at predetermined positions via the connection intermediary portion that connects the manufacturing substrate and the laminating substrate, are cured and integrally formed to form the manufacturing substrate, the connection intermediary portion, and the laminating substrate. When the manufacturing substrate shrinks while the lamination substrate is positioned at a predetermined position due to the electrical connection to each other, the lamination substrate is less than the production substrate. By shrinking with the shrinkage amount, the positional deviation of the laminating substrate with respect to the predetermined position falls within the shrinkage amount range.

【0064】従って本発明では、製造用基板及び積層用
基板が収縮しても、製造用基板の所定位置に対する積層
用基板の位置ずれが当該積層用基板の収縮量の範囲内に
収まるようになされているので、製造用基板に対する積
層用基板の位置ずれを最小限に収えた状態で電気的な接
続を確実に実行することができ、かくして、従来に比し
て電気的耐性の強い多層配線装置を製造することができ
る。
Therefore, in the present invention, even if the manufacturing substrate and the laminating substrate shrink, the positional deviation of the laminating substrate with respect to the predetermined position of the manufacturing substrate falls within the range of the shrinkage amount of the laminating substrate. Therefore, the electrical connection can be surely performed with the positional deviation of the stacking substrate with respect to the manufacturing substrate kept to a minimum, and thus, the multilayer wiring device having higher electrical resistance than the conventional one. Can be manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】多層基板の製造工程(1)を示す略線的断面図
である。
FIG. 1 is a schematic cross-sectional view showing a manufacturing process (1) of a multilayer substrate.

【図2】多層基板の製造工程(2)を示す略線的断面図
である。
FIG. 2 is a schematic cross-sectional view showing a manufacturing process (2) of a multilayer substrate.

【図3】各基板における収縮の様子を示す略線的断面図
である。
FIG. 3 is a schematic cross-sectional view showing the state of contraction in each substrate.

【図4】多層基板の製造工程(3)を示す略線的断面図
である。
FIG. 4 is a schematic cross-sectional view showing a manufacturing process (3) of a multilayer substrate.

【図5】多層基板を示す略線的断面図である。FIG. 5 is a schematic cross-sectional view showing a multilayer substrate.

【図6】他の実施の形態によるスルーホールの形成を示
す略線的断面図である。
FIG. 6 is a schematic cross-sectional view showing formation of a through hole according to another embodiment.

【図7】他の実施の形態による多層基板の製造工程を示
す略線的断面図である。
FIG. 7 is a schematic cross-sectional view showing a manufacturing process of a multilayer substrate according to another embodiment.

【符号の説明】[Explanation of symbols]

2、3、4、73、83……積層用基板、5……製造用
基板、11a、11b、11c、71……ベアチップ、
15、16、17……積層用回路基板、25a、25
b、25c……覆蓋プリプレグ、26a、26b、26
c、72、82……介挿プリプレグ、31、32、33
……層間部、35A、35B、35C、36A、36
B、36C、75A、75B、85……スルーホール、
50……製造用多層基板、51、52、53……多層基
板、62A、62B、62C、63A、63B、63C
……導通用部材、64A、64B、64C、65A、6
5B、65C……貫通孔。
2, 3, 4, 73, 83 ... Laminating substrate, 5 ... Manufacturing substrate, 11a, 11b, 11c, 71 ... Bare chip,
15, 16, 17 ... Circuit board for stacking, 25a, 25
b, 25c ... Cover prepreg, 26a, 26b, 26
c, 72, 82 ... Interposition prepreg, 31, 32, 33
...... Interlayer part, 35A, 35B, 35C, 36A, 36
B, 36C, 75A, 75B, 85 ... through hole,
50 ... Multilayer substrate for manufacturing, 51, 52, 53 ... Multilayer substrate, 62A, 62B, 62C, 63A, 63B, 63C
... Conduction member, 64A, 64B, 64C, 65A, 6
5B, 65C ... through holes.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 郡司 智康 北海道恵庭市戸磯573番地19クローバー電 子工業株式会社内 (72)発明者 村山 敏宏 東京都品川区北品川6丁目7番35号ソニー 株式会社内 (72)発明者 安田 誠之 東京都品川区北品川6丁目7番35号ソニー 株式会社内 Fターム(参考) 5E346 AA05 AA12 AA15 AA22 AA24 AA26 AA42 AA53 AA60 BB01 CC08 CC31 DD02 DD32 EE02 EE06 EE07 EE09 EE15 FF04 FF45 GG22 GG26 GG28 HH11   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tomoyasu Gunji             19 Clover Den, 573 Toiso, Eniwa, Hokkaido             Child Industry Co., Ltd. (72) Inventor Toshihiro Murayama             Sony 6-735 Kitashinagawa, Shinagawa-ku, Tokyo             Within the corporation (72) Inventor Masayuki Yasuda             Sony 6-735 Kitashinagawa, Shinagawa-ku, Tokyo             Within the corporation F-term (reference) 5E346 AA05 AA12 AA15 AA22 AA24                       AA26 AA42 AA53 AA60 BB01                       CC08 CC31 DD02 DD32 EE02                       EE06 EE07 EE09 EE15 FF04                       FF45 GG22 GG26 GG28 HH11

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】所定の製造用基板に比して少ない収縮量で
なる積層用基板を選定する選定ステップと、 上記製造用基板の所定位置に上記積層用基板を位置決め
する位置決ステップと、 上記製造用基板と上記積層用基板とを接続する接続仲介
部を介して上記所定位置に位置決めされた上記製造用基
板及び上記積層用基板を硬化して一体形成する硬化ステ
ップと、 上記製造用基板、上記接続仲介部及び上記積層用基板を
相互に電気的に接続する接続ステップとを具え、 上記硬化ステップでは、上記所定位置に位置決めされた
上記製造用基板及び上記積層用基板を硬化することに伴
って、上記所定位置に上記積層用基板が位置決めされた
まま上記製造用基板が収縮した場合に、上記積層用基板
が上記製造用基板に比して少ない収縮量で収縮されるこ
とにより、上記所定位置に対する上記積層用基板の位置
ずれが上記収縮量の範囲内に収まるようにしたことを特
徴とする多層基板製造方法。
1. A selection step of selecting a stacking substrate having a shrinkage amount smaller than that of a predetermined manufacturing substrate, a positioning step of positioning the stacking substrate at a predetermined position of the manufacturing substrate, A curing step of curing and integrally forming the manufacturing substrate and the laminating substrate positioned at the predetermined position via a connection intermediary portion that connects the manufacturing substrate and the laminating substrate; A step of electrically connecting the connection mediation part and the stacking substrate to each other, wherein the curing step involves curing the manufacturing substrate and the stacking substrate positioned at the predetermined position. Thus, when the manufacturing substrate shrinks while the laminating substrate is positioned at the predetermined position, the laminating substrate shrinks with a smaller shrinkage amount than the manufacturing substrate. By so doing, the positional deviation of the stacking substrate with respect to the predetermined position is set to fall within the range of the shrinkage amount.
【請求項2】上記選定ステップでは、 上記製造用基板と同材質であって、上記製造用基板の一
面における面積のほぼ1/3以下の面積を有する上記積
層用基板を選定することを特徴とする請求項1に記載の
多層基板製造方法。
2. The laminating substrate having the same material as that of the manufacturing substrate and having an area which is approximately 1/3 or less of an area of one surface of the manufacturing substrate is selected in the selecting step. The method of manufacturing a multilayer substrate according to claim 1.
JP2002006767A 2002-01-15 2002-01-15 Multilayer substrate manufacturing method Expired - Lifetime JP4137451B2 (en)

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