JP2003203926A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2003203926A
JP2003203926A JP2002313208A JP2002313208A JP2003203926A JP 2003203926 A JP2003203926 A JP 2003203926A JP 2002313208 A JP2002313208 A JP 2002313208A JP 2002313208 A JP2002313208 A JP 2002313208A JP 2003203926 A JP2003203926 A JP 2003203926A
Authority
JP
Japan
Prior art keywords
insulating film
opening
film
wiring
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002313208A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003203926A5 (https=
Inventor
Akira Ishikawa
明 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002313208A priority Critical patent/JP2003203926A/ja
Publication of JP2003203926A publication Critical patent/JP2003203926A/ja
Publication of JP2003203926A5 publication Critical patent/JP2003203926A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002313208A 2001-10-30 2002-10-28 半導体装置 Withdrawn JP2003203926A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002313208A JP2003203926A (ja) 2001-10-30 2002-10-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001332052 2001-10-30
JP2001-332052 2001-10-30
JP2002313208A JP2003203926A (ja) 2001-10-30 2002-10-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008223027A Division JP4719260B2 (ja) 2001-10-30 2008-09-01 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003203926A true JP2003203926A (ja) 2003-07-18
JP2003203926A5 JP2003203926A5 (https=) 2005-12-15

Family

ID=27666635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002313208A Withdrawn JP2003203926A (ja) 2001-10-30 2002-10-28 半導体装置

Country Status (1)

Country Link
JP (1) JP2003203926A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
JP2005093977A (ja) * 2003-09-15 2005-04-07 Ind Technol Res Inst 電解放出ディスプレイの薄膜トランジスタ装置
JP2006058676A (ja) * 2004-08-20 2006-03-02 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法、並びにテレビジョン装置
JP2007048934A (ja) * 2005-08-10 2007-02-22 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2007265972A (ja) * 2006-03-27 2007-10-11 Samsung Sdi Co Ltd 有機電界発光表示装置及びその製造方法
US7423343B2 (en) 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP2016507905A (ja) * 2013-02-19 2016-03-10 京東方科技集團股▲ふん▼有限公司 薄膜トランジスター及びその製作方法、表示装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
US7423343B2 (en) 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
US7655560B2 (en) 2003-08-05 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP2005093977A (ja) * 2003-09-15 2005-04-07 Ind Technol Res Inst 電解放出ディスプレイの薄膜トランジスタ装置
JP2006058676A (ja) * 2004-08-20 2006-03-02 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法、並びにテレビジョン装置
JP2007048934A (ja) * 2005-08-10 2007-02-22 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2007265972A (ja) * 2006-03-27 2007-10-11 Samsung Sdi Co Ltd 有機電界発光表示装置及びその製造方法
US8415675B2 (en) 2006-03-27 2013-04-09 Samsung Display Co., Ltd. Organic light emitting display device and method of fabricating the same
JP2016507905A (ja) * 2013-02-19 2016-03-10 京東方科技集團股▲ふん▼有限公司 薄膜トランジスター及びその製作方法、表示装置

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