JP2003203925A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法Info
- Publication number
- JP2003203925A JP2003203925A JP2002310581A JP2002310581A JP2003203925A JP 2003203925 A JP2003203925 A JP 2003203925A JP 2002310581 A JP2002310581 A JP 2002310581A JP 2002310581 A JP2002310581 A JP 2002310581A JP 2003203925 A JP2003203925 A JP 2003203925A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- semiconductor device
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 190
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 72
- 239000013078 crystal Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229920001230 polyarylate Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 239000004695 Polyether sulfone Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- 229920006393 polyether sulfone Polymers 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 150000002825 nitriles Chemical class 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229910017109 AlON Inorganic materials 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims 5
- 229920003023 plastic Polymers 0.000 claims 5
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000002985 plastic film Substances 0.000 claims 1
- 229920006255 plastic film Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 436
- 230000008569 process Effects 0.000 abstract description 34
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 description 67
- 239000010410 layer Substances 0.000 description 32
- 229910021419 crystalline silicon Inorganic materials 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001994 activation Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005247 gettering Methods 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052795 boron group element Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 102000020897 Formins Human genes 0.000 description 1
- 108091022623 Formins Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002310581A JP2003203925A (ja) | 2001-10-26 | 2002-10-25 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001328701 | 2001-10-26 | ||
| JP2001-328701 | 2001-10-26 | ||
| JP2002310581A JP2003203925A (ja) | 2001-10-26 | 2002-10-25 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003203925A true JP2003203925A (ja) | 2003-07-18 |
| JP2003203925A5 JP2003203925A5 (enrdf_load_stackoverflow) | 2005-12-08 |
Family
ID=27666524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002310581A Withdrawn JP2003203925A (ja) | 2001-10-26 | 2002-10-25 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003203925A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011369A1 (ja) * | 2004-07-29 | 2006-02-02 | Nec Corporation | 電界効果型トランジスタ用の基板、電界効果型トランジスタ及びその製造方法 |
| KR100841380B1 (ko) * | 2005-08-10 | 2008-06-26 | 미쓰비시덴키 가부시키가이샤 | 박막트랜지스터 및 그 제조방법 |
| US7851277B2 (en) | 2006-12-05 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| CN102618013A (zh) * | 2012-03-30 | 2012-08-01 | 电子科技大学 | 一种印制电路复合基板材料和绝缘基板及其制备方法 |
| US8853782B2 (en) | 2006-12-05 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104638017A (zh) * | 2015-02-04 | 2015-05-20 | 京东方科技集团股份有限公司 | 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置 |
| JP2018037412A (ja) * | 2008-10-16 | 2018-03-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN111430462A (zh) * | 2019-01-10 | 2020-07-17 | 三星电子株式会社 | 半导体装置 |
| EP3685443A4 (en) * | 2017-09-18 | 2021-04-21 | INTEL Corporation | STRESS THIN LAYER TRANSISTORS |
-
2002
- 2002-10-25 JP JP2002310581A patent/JP2003203925A/ja not_active Withdrawn
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011369A1 (ja) * | 2004-07-29 | 2006-02-02 | Nec Corporation | 電界効果型トランジスタ用の基板、電界効果型トランジスタ及びその製造方法 |
| KR100841380B1 (ko) * | 2005-08-10 | 2008-06-26 | 미쓰비시덴키 가부시키가이샤 | 박막트랜지스터 및 그 제조방법 |
| US7709841B2 (en) | 2005-08-10 | 2010-05-04 | Mitsubishi Denki Kabushiki Kaisha | Thin film transistor having an island like semiconductor layer on an insulator |
| US7851277B2 (en) | 2006-12-05 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| US8283669B2 (en) | 2006-12-05 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| US8853782B2 (en) | 2006-12-05 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10340319B2 (en) | 2008-10-16 | 2019-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Organic light-emitting device having a color filter |
| US11930668B2 (en) | 2008-10-16 | 2024-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Flexible light-emitting device and EL module including transparent conductive film |
| US11189676B2 (en) | 2008-10-16 | 2021-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having fluorescent and phosphorescent materials |
| JP2018037412A (ja) * | 2008-10-16 | 2018-03-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| CN102618013A (zh) * | 2012-03-30 | 2012-08-01 | 电子科技大学 | 一种印制电路复合基板材料和绝缘基板及其制备方法 |
| US9741750B2 (en) | 2015-02-04 | 2017-08-22 | Boe Technology Group Co., Ltd. | Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device |
| CN104638017B (zh) * | 2015-02-04 | 2017-10-13 | 京东方科技集团股份有限公司 | 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置 |
| CN104638017A (zh) * | 2015-02-04 | 2015-05-20 | 京东方科技集团股份有限公司 | 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置 |
| EP3685443A4 (en) * | 2017-09-18 | 2021-04-21 | INTEL Corporation | STRESS THIN LAYER TRANSISTORS |
| US11342457B2 (en) | 2017-09-18 | 2022-05-24 | Intel Corporation | Strained thin film transistors |
| CN111430462A (zh) * | 2019-01-10 | 2020-07-17 | 三星电子株式会社 | 半导体装置 |
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