JP2003198057A - 半導体レーザ素子及びその製造方法 - Google Patents
半導体レーザ素子及びその製造方法Info
- Publication number
- JP2003198057A JP2003198057A JP2001396900A JP2001396900A JP2003198057A JP 2003198057 A JP2003198057 A JP 2003198057A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2003198057 A JP2003198057 A JP 2003198057A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- ridge
- face
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 118
- 238000000034 method Methods 0.000 claims description 41
- 238000005253 cladding Methods 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 229910021478 group 5 element Inorganic materials 0.000 claims description 13
- 238000003776 cleavage reaction Methods 0.000 claims description 8
- 230000007017 scission Effects 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001396900A JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001396900A JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003198057A true JP2003198057A (ja) | 2003-07-11 |
| JP2003198057A5 JP2003198057A5 (enrdf_load_stackoverflow) | 2005-08-04 |
Family
ID=27602846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001396900A Pending JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003198057A (enrdf_load_stackoverflow) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009057254A1 (ja) * | 2007-11-02 | 2009-05-07 | Panasonic Corporation | 半導体レーザ装置 |
| WO2009141933A1 (ja) * | 2008-05-19 | 2009-11-26 | パナソニック株式会社 | 窒化物半導体レーザ |
| JP2009302138A (ja) * | 2008-06-10 | 2009-12-24 | Opnext Japan Inc | 半導体レーザ素子、及び半導体レーザ素子の製造方法 |
| JP2010034305A (ja) * | 2008-07-29 | 2010-02-12 | Panasonic Corp | 半導体レーザ装置 |
| JP2010062213A (ja) * | 2008-09-01 | 2010-03-18 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
| JP2010087083A (ja) * | 2008-09-30 | 2010-04-15 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
| US7733935B2 (en) | 2007-10-23 | 2010-06-08 | Sharp Kabushiki Kaisha | Nitride semiconductor laser device and method of producing the same |
| JP2010141012A (ja) * | 2008-12-10 | 2010-06-24 | Panasonic Corp | 半導体レーザ装置及びその製造方法 |
| US8202750B2 (en) | 2007-02-28 | 2012-06-19 | Sony Corporation | Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer |
| US8270450B2 (en) | 2009-12-08 | 2012-09-18 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device |
| US8530255B2 (en) | 2007-02-28 | 2013-09-10 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer |
| US20230155346A1 (en) * | 2020-08-04 | 2023-05-18 | Panasonic Holdings Corporation | Semiconductor light emitting device |
-
2001
- 2001-12-27 JP JP2001396900A patent/JP2003198057A/ja active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8822975B2 (en) | 2007-02-28 | 2014-09-02 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type Group III-V compound semiconductor layer |
| US8202750B2 (en) | 2007-02-28 | 2012-06-19 | Sony Corporation | Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer |
| US8530255B2 (en) | 2007-02-28 | 2013-09-10 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer |
| US7733935B2 (en) | 2007-10-23 | 2010-06-08 | Sharp Kabushiki Kaisha | Nitride semiconductor laser device and method of producing the same |
| WO2009057254A1 (ja) * | 2007-11-02 | 2009-05-07 | Panasonic Corporation | 半導体レーザ装置 |
| WO2009141933A1 (ja) * | 2008-05-19 | 2009-11-26 | パナソニック株式会社 | 窒化物半導体レーザ |
| JP2009283512A (ja) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | 窒化物半導体レーザ |
| JP2009302138A (ja) * | 2008-06-10 | 2009-12-24 | Opnext Japan Inc | 半導体レーザ素子、及び半導体レーザ素子の製造方法 |
| US8000365B2 (en) | 2008-07-29 | 2011-08-16 | Panasonic Corporation | Semiconductor laser device |
| JP2010034305A (ja) * | 2008-07-29 | 2010-02-12 | Panasonic Corp | 半導体レーザ装置 |
| JP2010062213A (ja) * | 2008-09-01 | 2010-03-18 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
| JP2010087083A (ja) * | 2008-09-30 | 2010-04-15 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
| US8896002B2 (en) | 2008-09-30 | 2014-11-25 | Sony Corporation | Method for producing semiconductor laser, semiconductor laser, optical pickup, and optical disk drive |
| JP2010141012A (ja) * | 2008-12-10 | 2010-06-24 | Panasonic Corp | 半導体レーザ装置及びその製造方法 |
| US8422526B2 (en) | 2008-12-10 | 2013-04-16 | Panasonic Corporation | Semiconductor laser device and method for manufacturing the same |
| US8270450B2 (en) | 2009-12-08 | 2012-09-18 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical disc device, method of manufacturing semiconductor device, and semiconductor device |
| US20230155346A1 (en) * | 2020-08-04 | 2023-05-18 | Panasonic Holdings Corporation | Semiconductor light emitting device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD02 | Notification of acceptance of power of attorney |
Effective date: 20040317 Free format text: JAPANESE INTERMEDIATE CODE: A7422 |
|
| RD04 | Notification of resignation of power of attorney |
Effective date: 20040604 Free format text: JAPANESE INTERMEDIATE CODE: A7424 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20041224 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041224 |
|
| A977 | Report on retrieval |
Effective date: 20071009 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20071018 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A521 | Written amendment |
Effective date: 20071214 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20080401 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080602 |
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| A02 | Decision of refusal |
Effective date: 20080918 Free format text: JAPANESE INTERMEDIATE CODE: A02 |