JP2003188278A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JP2003188278A JP2003188278A JP2002320078A JP2002320078A JP2003188278A JP 2003188278 A JP2003188278 A JP 2003188278A JP 2002320078 A JP2002320078 A JP 2002320078A JP 2002320078 A JP2002320078 A JP 2002320078A JP 2003188278 A JP2003188278 A JP 2003188278A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- nmos
- transistors
- nmos transistor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 81
- 238000010586 diagram Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 210000003371 toe Anatomy 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000004457 myocytus nodalis Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002320078A JP2003188278A (ja) | 2002-11-01 | 2002-11-01 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002320078A JP2003188278A (ja) | 2002-11-01 | 2002-11-01 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28233598A Division JP3560480B2 (ja) | 1998-10-05 | 1998-10-05 | スタティック・ランダム・アクセスメモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003188278A true JP2003188278A (ja) | 2003-07-04 |
JP2003188278A5 JP2003188278A5 (enrdf_load_stackoverflow) | 2005-11-24 |
Family
ID=27606757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002320078A Pending JP2003188278A (ja) | 2002-11-01 | 2002-11-01 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003188278A (enrdf_load_stackoverflow) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135758A (ja) * | 1983-01-24 | 1984-08-04 | Seiko Epson Corp | 半導体装置 |
JPS60134435A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体集積回路装置 |
JPS6154660A (ja) * | 1984-08-27 | 1986-03-18 | Toshiba Corp | 半導体集積回路装置 |
JPH0322476A (ja) * | 1989-06-19 | 1991-01-30 | Nec Corp | 半導体記憶装置 |
JPH0358475A (ja) * | 1989-07-26 | 1991-03-13 | Sony Corp | 半導体メモリ |
JPH03289716A (ja) * | 1990-04-05 | 1991-12-19 | Kawasaki Steel Corp | 半導体集積回路システム、及び、半導体集積回路 |
JPH0567963A (ja) * | 1991-09-06 | 1993-03-19 | Hitachi Ltd | 論理集積回路 |
JPH0541152U (ja) * | 1991-10-31 | 1993-06-01 | 三洋電機株式会社 | 半導体装置 |
JPH0887889A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | 半導体集積回路装置 |
JPH09200024A (ja) * | 1996-01-18 | 1997-07-31 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2000114399A (ja) * | 1998-10-05 | 2000-04-21 | Sharp Corp | スタティック・ランダム・アクセスメモリおよび半導体装置 |
-
2002
- 2002-11-01 JP JP2002320078A patent/JP2003188278A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135758A (ja) * | 1983-01-24 | 1984-08-04 | Seiko Epson Corp | 半導体装置 |
JPS60134435A (ja) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | 半導体集積回路装置 |
JPS6154660A (ja) * | 1984-08-27 | 1986-03-18 | Toshiba Corp | 半導体集積回路装置 |
JPH0322476A (ja) * | 1989-06-19 | 1991-01-30 | Nec Corp | 半導体記憶装置 |
JPH0358475A (ja) * | 1989-07-26 | 1991-03-13 | Sony Corp | 半導体メモリ |
JPH03289716A (ja) * | 1990-04-05 | 1991-12-19 | Kawasaki Steel Corp | 半導体集積回路システム、及び、半導体集積回路 |
JPH0567963A (ja) * | 1991-09-06 | 1993-03-19 | Hitachi Ltd | 論理集積回路 |
JPH0541152U (ja) * | 1991-10-31 | 1993-06-01 | 三洋電機株式会社 | 半導体装置 |
JPH0887889A (ja) * | 1994-09-19 | 1996-04-02 | Hitachi Ltd | 半導体集積回路装置 |
JPH09200024A (ja) * | 1996-01-18 | 1997-07-31 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2000114399A (ja) * | 1998-10-05 | 2000-04-21 | Sharp Corp | スタティック・ランダム・アクセスメモリおよび半導体装置 |
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Legal Events
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