JP2003174173A5 - - Google Patents
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- Publication number
- JP2003174173A5 JP2003174173A5 JP2002054875A JP2002054875A JP2003174173A5 JP 2003174173 A5 JP2003174173 A5 JP 2003174173A5 JP 2002054875 A JP2002054875 A JP 2002054875A JP 2002054875 A JP2002054875 A JP 2002054875A JP 2003174173 A5 JP2003174173 A5 JP 2003174173A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- main component
- semiconductor device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 78
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000010409 thin film Substances 0.000 claims 26
- 239000012535 impurity Substances 0.000 claims 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 15
- 229910052782 aluminium Inorganic materials 0.000 claims 15
- 239000010936 titanium Substances 0.000 claims 15
- 229910052719 titanium Inorganic materials 0.000 claims 15
- 239000010937 tungsten Substances 0.000 claims 15
- 229910052721 tungsten Inorganic materials 0.000 claims 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 10
- 239000000463 material Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 239000000956 alloy Substances 0.000 claims 5
- 229910045601 alloy Inorganic materials 0.000 claims 5
- 150000003657 tungsten Chemical class 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 238000010030 laminating Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002054875A JP4079655B2 (ja) | 2001-02-28 | 2002-02-28 | 半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001056063 | 2001-02-28 | ||
| JP2001-56063 | 2001-02-28 | ||
| JP2001-302687 | 2001-09-28 | ||
| JP2001302687 | 2001-09-28 | ||
| JP2002054875A JP4079655B2 (ja) | 2001-02-28 | 2002-02-28 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004356650A Division JP4593256B2 (ja) | 2001-02-28 | 2004-12-09 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003174173A JP2003174173A (ja) | 2003-06-20 |
| JP2003174173A5 true JP2003174173A5 (enrdf_load_stackoverflow) | 2005-07-21 |
| JP4079655B2 JP4079655B2 (ja) | 2008-04-23 |
Family
ID=27346133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002054875A Expired - Fee Related JP4079655B2 (ja) | 2001-02-28 | 2002-02-28 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4079655B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100544138B1 (ko) * | 2003-11-12 | 2006-01-23 | 삼성에스디아이 주식회사 | 액티브 매트릭스형 유기전계발광소자 |
| US7563658B2 (en) | 2004-12-27 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5525224B2 (ja) | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2010038820A1 (en) * | 2008-10-03 | 2010-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9311129D0 (en) * | 1993-05-28 | 1993-07-14 | Philips Electronics Uk Ltd | Electronic devices with-film circuit elements forming a sampling circuit |
| JP3402400B2 (ja) * | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
| JP3622934B2 (ja) * | 1996-07-31 | 2005-02-23 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタ型液晶表示装置 |
| JP3765194B2 (ja) * | 1998-01-19 | 2006-04-12 | 株式会社日立製作所 | 液晶表示装置 |
| JP4583529B2 (ja) * | 1998-11-09 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2000349301A (ja) * | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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2002
- 2002-02-28 JP JP2002054875A patent/JP4079655B2/ja not_active Expired - Fee Related