JP2003023161A5 - - Google Patents

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Publication number
JP2003023161A5
JP2003023161A5 JP2002108720A JP2002108720A JP2003023161A5 JP 2003023161 A5 JP2003023161 A5 JP 2003023161A5 JP 2002108720 A JP2002108720 A JP 2002108720A JP 2002108720 A JP2002108720 A JP 2002108720A JP 2003023161 A5 JP2003023161 A5 JP 2003023161A5
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JP
Japan
Prior art keywords
electrode
insulating film
contact
thin film
semiconductor
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Application number
JP2002108720A
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English (en)
Japanese (ja)
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JP2003023161A (ja
JP4338937B2 (ja
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Priority to JP2002108720A priority Critical patent/JP4338937B2/ja
Priority claimed from JP2002108720A external-priority patent/JP4338937B2/ja
Publication of JP2003023161A publication Critical patent/JP2003023161A/ja
Publication of JP2003023161A5 publication Critical patent/JP2003023161A5/ja
Application granted granted Critical
Publication of JP4338937B2 publication Critical patent/JP4338937B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002108720A 2001-04-16 2002-04-11 半導体装置 Expired - Fee Related JP4338937B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002108720A JP4338937B2 (ja) 2001-04-16 2002-04-11 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001116307 2001-04-16
JP2001-116307 2001-04-16
JP2002108720A JP4338937B2 (ja) 2001-04-16 2002-04-11 半導体装置

Publications (3)

Publication Number Publication Date
JP2003023161A JP2003023161A (ja) 2003-01-24
JP2003023161A5 true JP2003023161A5 (enrdf_load_stackoverflow) 2005-09-22
JP4338937B2 JP4338937B2 (ja) 2009-10-07

Family

ID=26613614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002108720A Expired - Fee Related JP4338937B2 (ja) 2001-04-16 2002-04-11 半導体装置

Country Status (1)

Country Link
JP (1) JP4338937B2 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078322B2 (en) 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
US7528643B2 (en) * 2003-02-12 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device having the same, and driving method of the same
US8760374B2 (en) 2004-05-21 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Display device having a light emitting element
JP5152448B2 (ja) * 2004-09-21 2013-02-27 カシオ計算機株式会社 画素駆動回路及び画像表示装置
JP4926426B2 (ja) 2005-08-12 2012-05-09 株式会社半導体エネルギー研究所 電子機器
JP2008216542A (ja) * 2007-03-02 2008-09-18 Seiko Epson Corp 有機半導体素子の駆動方法、電気光学装置、電気光学装置の駆動方法及び電子機器
KR102095625B1 (ko) 2008-10-24 2020-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2010224033A (ja) * 2009-03-19 2010-10-07 Toshiba Corp 表示装置及び表示装置の駆動方法
KR102443297B1 (ko) 2009-09-24 2022-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막 및 반도체 장치
CN105609509A (zh) * 2009-12-04 2016-05-25 株式会社半导体能源研究所 显示装置
US9754971B2 (en) * 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20140374744A1 (en) * 2013-06-19 2014-12-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016066788A (ja) * 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
US10186618B2 (en) 2015-03-18 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9685368B2 (en) 2015-06-26 2017-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having an etch stop layer over conductive lines
JP6920785B2 (ja) * 2015-08-19 2021-08-18 株式会社ジャパンディスプレイ 表示装置

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